MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte mode only: - 262,411 x8 (MX29LV002C/002NC) - 524,288 x8 (MX29LV004C) - 1,048,576 x8 (MX29LV008C) • Sector Structure - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 3 (MX29LV002C), 64K-Byte x 7 (MX29LV004C), 64K-Byte x 15 (MX29LV008C) • Sector Protect - Provides sector protect function to prevent program or erase operation in the protected sector - Provides chip unprotect function to allow code changing - Provides temporary sector unprotect function for code changing in previously protected sector • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Latch-up protected to 250mA from -1V to Vcc + 1V • Low Vcc write inhibit : Vcc ≤ 1.4V • Compatible with JEDEC standard - Pinout and software compatible to single power supply Flash PERFORMANCE • High Performance - Fast access time: 45Q (MX29LV004C only), 55Q (for MX29LV004C and MX29LV008C), 70/90ns - Fast program time: 9us/Byte typical utilizing accelerate function - Fast erase time: 0.7s/sector • Low Power Consumption - Low active read current: 7mA (typical) at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 20 years data retention SOFTWARE FEATURES • Erase Suspend/ Erase Resume - Suspends sector erase operation to read data from or program data to another sector which is not being erased • Status Reply - Data# Polling & Toggle bits provide detection of program and erase operation completion • Support Common Flash Interface (CFI) only for 29LV002C/002NC, 29LV004C HARDWARE FEATURES • Ready/Busy# (RY/BY#) Output only for 29LV004C, 29LV008C - Provides a hardware method of detecting program and erase operation completion • Hardware Reset (RESET#) Input - Provides a hardware method to reset the internal state machine to read mode PACKAGE • 32-Pin TSOP (for MX29LV002C/002NC) • 32-Pin PLCC (for MX29LV002C/002NC and MX29LV004C) • 40-Pin TSOP (for MX29LV004C and MX29LV008C), which is not recommended for new design in • All devices are RoHS Compliant P/N:PM1301 REV. 2.0, DEC. 15, 2011 1 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV002C/002NC PIN CONFIGURATIONS 32 TSOP (TYPE 1) A11 A9 A8 A13 A14 A17 WE# VCC RESET# A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 MX29LV002C/002NC T/B 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CE# Q7 Q6 Q5 Q4 Q3 GND Q2 Q1 Q0 A0 A1 A2 A3 NC on MX29LV002NC 32 PLCC PIN DESCRIPTION 32 30 29 A14 A6 A13 A5 A8 A4 A9 A3 9 A2 MX29LV002C/ 002NC T/B 25 A10 CE# Q5 Q4 Q3 VSS PIN NAME Address Input Data Input/Output Chip Enable Input Write Enable Input Hardware Reset Pin/Sector Protect Unlock Output Enable Input Power Supply Pin (+3V) Ground Pin Q7 Q6 21 20 17 Q2 Q1 OE# VCC GND OE# A0 13 14 RESET# A11 A1 Q0 SYMBOL A0~A17 Q0~Q7 CE# WE# A17 1 WE# A16 4 VCC 5 RESET# A7 A15 A12 NC on MX29LV002NC P/N:PM1301 REV. 2.0, DEC. 15, 2011 2 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV004C PIN CONFIGURATIONS 40 TSOP (Standard Type) (10mm x 20mm) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 A16 A15 A14 A13 A12 A11 A9 A8 WE# RESET# NC RY/BY# A18 A7 A6 A5 A4 A3 A2 A1 MX29LV004C T/B 32 PLCC 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 Q7 Q6 Q5 Q4 VCC VCC NC Q3 Q2 Q1 Q0 OE# VSS CE# A0 32 30 29 A14 A6 A13 A5 A8 A4 A3 RESET# A9 9 MX29LV004C T/B 25 A11 A2 OE# A1 A10 A0 OE# RY/BY# VCC GND CE# 21 20 Q5 Q4 Q3 Q2 GND 17 Q7 PIN NAME Address Input Data Input/Output Chip Enable Input Write Enable Input Hardware Reset Pin/Sector Protect Unlock (for 40-TSOP) Output Enable Input Ready/Busy# Output (for 40-TSOP) Power Supply Pin (2.7V~3.6V) Ground Pin Q6 13 14 Q1 Q0 SYMBOL A0~A18 Q0~Q7 CE# WE# A17 1 WE# A16 4 VCC 5 A18 A7 A15 A12 PIN DESCRIPTION P/N:PM1301 REV. 2.0, DEC. 15, 2011 3 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV008C PIN CONFIGURATIONS 40 TSOP (Standard Type) (10mm x 20mm) A16 A15 A14 A13 A12 A11 A9 A8 WE# RESET# NC RY/BY# A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 MX29LV008CT/CB 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC A19 A10 Q7 Q6 Q5 Q4 VCC VCC NC Q3 Q2 Q1 Q0 OE# GND CE# A0 PIN DESCRIPTION SYMBOL A0~A19 Q0~Q7 CE# WE# RESET# OE# RY/BY# VCC GND PIN NAME Address Input Data Input/Output Chip Enable Input Write Enable Input Hardware Reset Pin Output Enable Input Ready/Busy Output Power Supply Pin (2.7V~3.6V) Ground Pin P/N:PM1301 REV. 2.0, DEC. 15, 2011 4 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B BLOCK DIAGRAM CE# OE# WE# RESET# CONTROL INPUT LOGIC PROGRAM/ERASE STATE HIGH VOLTAGE MACHINE (WSM) LATCH BUFFER Y-DECODER AND STATE X-DECODER ADDRESS A0-AM WRITE FLASH REGISTER ARRAY ARRAY Y-PASS GATE SOURCE HV COMMAND DATA DECODER SENSE AMPLIFIER PGM DATA HV COMMAND DATA LATCH PROGRAM DATA LATCH Q0-Q7 I/O BUFFER AM: MSB address P/N:PM1301 REV. 2.0, DEC. 15, 2011 5 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Table 1. BLOCK STRUCTURE MX29LV002CT SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 Sector Size Byte Mode 64Kbytes 64Kbytes 64Kbytes 32Kbytes 8Kbytes 8Kbytes 16Kbytes Address range Byte Mode (x8) 00000-0FFFF 10000-1FFFF 20000-2FFFF 30000-37FFF 38000-39FFF 3A000-3BFFF 3C000-3FFFF A17 0 0 1 1 1 1 1 A16 0 1 0 1 1 1 1 Sector Address A15 A14 X X X X X X 0 X 1 0 1 0 1 1 A13 X X X X 0 1 X A17 0 0 0 0 0 1 1 A16 0 0 0 0 1 0 1 Sector Address A15 A14 0 0 0 1 0 1 1 X X X X X X X A13 X 0 1 X X X X MX29LV002CB SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 Sector Size Byte Mode 16Kbytes 8Kbytes 8Kbytes 32Kbytes 64Kbytes 64Kbytes 64Kbytes Address range Byte Mode (x8) 00000-03FFF 04000-05FFF 06000-07FFF 08000-0FFFF 10000-1FFFF 20000-2FFFF 30000-3FFFF P/N:PM1301 REV. 2.0, DEC. 15, 2011 6 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV004CT SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 Sector Size Byte Mode 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 32Kbytes 8Kbytes 8Kbytes 16Kbytes Address range Byte Mode (x8) 00000-0FFFF 10000-1FFFF 20000-2FFFF 30000-3FFFF 40000-4FFFF 50000-5FFFF 60000-6FFFF 70000-77FFF 78000-79FFF 7A000-7BFFF 7C000-7FFFF A18 0 0 0 0 1 1 1 1 1 1 1 A17 0 0 1 1 0 0 1 1 1 1 1 Sector Address A16 A15 A14 0 X X 1 X X 0 X X 1 X X 0 X X 1 X X 0 X X 1 0 X 1 1 0 1 1 0 1 1 1 A13 X X X X X X X X 0 1 X A17 0 0 0 0 0 1 1 0 0 1 1 Sector Address A16 A15 A14 0 0 0 0 0 1 0 0 1 0 1 X 1 X X 0 X X 1 X X 0 X X 1 X X 0 X X 1 X X A13 X 0 1 X X X X X X X X MX29LV004CB SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 Sector Size Byte Mode 16Kbytes 8Kbytes 8Kbytes 32Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes Address range Byte Mode (x8) 00000-03FFF 04000-05FFF 06000-07FFF 08000-0FFFF 10000-1FFFF 20000-2FFFF 30000-3FFFF 40000-4FFFF 50000-5FFFF 60000-6FFFF 70000-7FFFF P/N:PM1301 A18 0 0 0 0 0 0 0 1 1 1 1 REV. 2.0, DEC. 15, 2011 7 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV008CT SECTOR ARCHITECTURE Sector Sector Size Address range SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 32Kbytes 8Kbytes 8Kbytes 16kbytes 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-EFFFFh F0000h-F7FFFh F8000h-F9FFFh FA000h-FBFFFh FC000h-FFFFFh A19 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 P/N:PM1301 A18 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 Sector Address A17 A16 A15 0 0 X 0 1 X 1 0 X 1 1 X 0 0 X 0 1 X 1 0 X 1 1 X 0 0 X 0 1 X 1 0 X 1 1 X 0 0 X 0 1 X 1 0 X 1 1 0 1 1 1 1 1 1 1 1 1 A14 X X X X X X X X X X X X X X X X 0 0 1 A13 X X X X X X X X X X X X X X X X 0 1 X REV. 2.0, DEC. 15, 2011 8 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV008CB SECTOR ARCHITECTURE Sector Sector Size Address range SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 16Kbytes 8Kbytes 8Kbytes 32Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64kbytes 00000h-03FFFh 04000h-05FFFh 06000h-07FFFh 08000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-EFFFFh F0000h-FFFFFh A19 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 P/N:PM1301 A18 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 Sector Address A17 A16 A15 0 0 0 0 0 0 0 0 0 0 0 1 0 1 X 1 0 X 1 1 X 0 0 X 0 1 X 1 0 X 1 1 X 0 0 X 0 1 X 1 0 X 1 1 X 0 0 X 0 1 X 1 0 X 1 1 X A14 0 1 1 X X X X X X X X X X X X X X X X A13 X 0 1 X X X X X X X X X X X X X X X X REV. 2.0, DEC. 15, 2011 9 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Table 2. BUS OPERATION--1 Mode Select RESET# CE# WE# OE# Address Q0~Q7 Device Reset L X X X X HighZ Standby Mode Vcc±0.3V Vcc±0.3V X X X HighZ Output Disable H L H H X HighZ Read Mode H L H L AIN DOUT Write H L L H AIN DIN Temporary Sector Unprotect Vhv X X X AIN DIN Sector Protect Vhv L L H Sector Address, A6=L, A1=H, A0=L DIN Chip Unprotect Vhv L L H Sector Address, A6=H, A1=H, A0=L DIN Note: 1. Q0~Q7 are input (DIN) or output (DOUT) pins according to the requests of command sequence, sector protection, or data polling algorithm. P/N:PM1301 REV. 2.0, DEC. 15, 2011 10 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B BUS OPERATION--2 Item Control Input AM to CE# WE# OE# A13 A12 to A10 A9 A8 to A7 A6 A5 to A2 A1 A0 Q0~Q7 Sector Protect Verification L H L SA x Vhv x L x H L 01h or 00h (Note1) Read Silicon ID Manufacturer Code L H L x x Vhv x L x L L C2H Read Silicon ID MX29LV002CT L H L x x Vhv x L x L H 59H Read Silicon ID MX29LV002CB L H L x x Vhv x L x L H 5AH Read Silicon ID MX29LV004CT L H L x x Vhv x L x L H B5H Read Silicon ID MX29LV004CB L H L x x Vhv x L x L H B6H Read Silicon ID MX29LV008CT L H L x x Vhv x L x L H 3EH Read Silicon ID MX29LV008CB L H L x x Vhv x L x L H 37H Notes: 1. Sector unprotected code:00h. Sector protected code:01h. 2. AM: MSB of address. P/N:PM1301 REV. 2.0, DEC. 15, 2011 11 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B WRITE COMMANDS/COMMAND SEQUENCES To write a command to the device, system must drive WE# and CE# to Vil, and OE# to Vih. In a command cycle, all address are latched at the later falling edge of CE# and WE#, and all data are latched at the earlier rising edge of CE# and WE#. Figure 1 illustrates the AC timing waveform of a write command, and Table 3 defines all the valid command sets of the device. System is not allowed to write invalid commands not defined in this datasheet. Writing an invalid command will bring the device to an undefined state. REQUIREMENTS FOR READING ARRAY DATA Read array action is to read the data stored in the array. While the memory device is in powered up or has been reset, it will automatically enter the status of read array. If the microprocessor wants to read the data stored in array, it has to drive CE# (device enable control pin) and OE# (Output control pin) as Vil, and input the address of the data to be read into address pin at the same time. After a period of read cycle (Tce or Taa), the data being read out will be displayed on output pin for microprocessor to access. If CE# or OE# is Vih, the output will be in tri-state, and there will be no data displayed on output pin at all. After the memory device completes embedded operation (automatic Erase or Program), it will automatically return to the status of read array, and the device can read the data in any address in the array. In the process of erasing, if the device receives the Erase suspend command, erase operation will be stopped temporarily after a period of time no more than Tready1 and the device will return to the status of read array. At this time, the device can read the data stored in any address except the sector being erased in the array. In the status of erase suspend, if user wants to read the data in the sectors being erased, the device will output status data onto the output. Similarly, if program command is issued after erase suspend, after program operation is completed, system can still read array data in any address except the sectors to be erased The device needs to issue reset command to enable read array operation again in order to arbitrarily read the data in the array in the following two situations: 1. In program or erase operation, the programming or erasing failure causes Q5 to go high. 2. The device is in auto select mode or CFI mode. In the two situations above, if reset command is not issued, the device is not in read array mode and system must issue reset command before reading array data. P/N:PM1301 REV. 2.0, DEC. 15, 2011 12 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B RESET# OPERATION Driving RESET# pin low for a period more than Trp will reset the device back to read mode. If the device is in program or erase operation, the reset operation will take at most a period of Tready1 for the device to return to read array mode. Before the device returns to read array mode, the RY/BY# pin remains low (busy status). When RESET# pin is held at GND±0.3V, the device consumes standby current(Isb).However, device draws larger current if RESET# pin is held at Vil but not within GND±0.3V. It is recommended that the system to tie its reset signal to RESET# pin of flash memory, so that the flash memory will be reset during system reset and allows system to read boot code from flash memory. SECTOR PROTECT OPERATION When a sector is protected, program or erase operation will be disabled on that protected sector. MX29LV002C/ MX29LV004C/MX29LV008C T/B provides two methods for sector protection. Once the sector is protected, the sector remains protected until next chip unprotect, or is temporarily unprotected by asserting RESET# pin at Vhv. Refer to temporary sector unprotect operation for further details. The first method is by applying Vhv on RESET# pin. Refer to Figure 12 for timing diagram and Figure 13 for the algorithm for this method. The other method is asserting Vhv on A9 and OE# pins, with A6 and CE# at Vil. The protection operation begins at the falling edge of WE# and terminates at the rising edge. Contact Macronix for details. CHIP UNPROTECT OPERATION MX29LV002C/MX29LV004C/MX29LV008C T/B provides two methods for chip unprotect. The chip unprotect operation unprotects all sectors within the device. It is recommended to protect all sectors before activating chip unprotect mode. All sector are unprotected when shipped from the factory. The first method is by applying Vhv on RESET# pin. Refer to Figure 12 for timing diagram and Figure 13 for algorithm of the operation. The other method is asserting Vhv on A9 and OE# pins, with A6 at Vih and CE# at Vil (see Table 2). The unprotect operation begins at the falling edge of WE# and terminates at the rising edge. Contact Macronix for details. TEMPORARY SECTOR UNPROTECT OPERATION System can apply RESET# pin at Vhv to place the device in temporary unprotect mode. In this mode, previously protected sectors can be programmed or erased just as it is unprotected. The devices returns to normal operation once Vhv is removed from RESET# pin and previously protected sectors are again protected. P/N:PM1301 REV. 2.0, DEC. 15, 2011 13 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B AUTOMATIC SELECT OPERATION When the device is in Read array mode, erase-suspended read array mode or CFI mode, user can issue read silicon ID command to enter read silicon ID mode. After entering read silicon ID mode, user can query several silicon IDs continuously and does not need to issue read silicon ID mode again. When A0 is Low, device will output Macronix Manufacture ID C2. When A0 is high, device will output Device ID. In read silicon ID mode, issuing reset command will reset device back to read array mode or erase-suspended read array mode. Another way to enter read silicon ID is to apply high voltage on A9 pin with CE#, OE#, A6 and A1 at Vil. While the high voltage of A9 pin is discharged, device will automatically leave read silicon ID mode and go back to read array mode or erase-suspended read array mode. When A0 is Low, device will output Macronix Manufacture ID C2. When A0 is high, device will output Device ID. VERIFY SECTOR PROTECT STATUS OPERATION MX29LV002C/MX29LV004C/MX29LV008C T/B provides hardware sector protection against Program and Erase operation for protected sectors. The sector protect status can be read through Sector Protect Verify command. This method requires Vhv on A9 pin, Vih on WE# and A1 pins, Vil on CE#, OE#, A6 and A0 pins, and sector address on A13 to AM pins. If the read out data is 01H, the designated sector is protected. Oppositely, if the read out data is 00H, the designated sector is not protected. DATA PROTECTION To avoid accidental erasure or programming of the device, the device is automatically reset to read array mode during power up. Besides, only after successful completion of the specified command sets will the device begin its erase or program operation. Other features to protect the data from accidental alternation are described as followed. LOW VCC WRITE INHIBIT The device refuses to accept any write command when Vcc is less than 1.4V. This prevents data from spuriously altered. The device automatically resets itself when Vcc is lower than 1.4V and write cycles are ignored until Vcc is greater than 1.4V. System must provide proper signals on control pins after Vcc is larger than 1.4V to avoid unintentional program or erase operation WRITE PULSE "GLITCH" PROTECTION CE#, WE#, OE# pulses shorter than 5ns are treated as glitches and will not be regarded as an effective write cycle. LOGICAL INHIBIT A valid write cycle requires both CE# and WE# at Vil with OE# at Vih. Write cycle is ignored when either CE# at Vih, WE# a Vih, or OE# at Vil. P/N:PM1301 REV. 2.0, DEC. 15, 2011 14 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B POWER-UP SEQUENCE Upon power up, MX29LV002C/MX29LV004C/MX29LV008C T/B is placed in read array mode. Furthermore, program or erase operation will begin only after successful completion of specified command sequences. POWER-UP WRITE INHIBIT When WE#, CE# is held at Vil and OE# is held at Vih during power up, the device ignores the first command on the rising edge of WE#. POWER SUPPLY DECOUPLING A 0.1uF capacitor should be connected between the Vcc and GND to reduce the noise effect. P/N:PM1301 REV. 2.0, DEC. 15, 2011 15 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B TABLE 3. MX29LV002C/MX29LV004C/MX29LV008C T/B COMMAND DEFINITIONS Command 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6th Bus Cycle Read Mode Addr Data Addr Data Addr Data Addr Data C2 ID 00/01 Addr Data Addr Data Command 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6th Bus Cycle Addr Data Automatic Select Reset Mode Manufacturer Sector Protect Device ID ID Verify XXX 555 555 555 F0 AA AA AA 2AA 2AA 2AA 55 55 55 555 555 555 90 90 90 (Sector) X00 X01 X02 Chip Erase 555 AA 2AA 55 555 A0 555 AA 2AA 55 555 80 Addr 555 Data AA 2AA 55 555 10 Sector Erase Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Program 555 AA 2AA 55 555 80 555 AA 2AA 55 Sector 30 Erase Suspend XXX B0 Erase Resume XXX 30 Sector Protect CFI (Note 4) XXX 60 sector 60 sector 40 sector 00/01 55 98 Notes: 1.Device ID : 29LV002C: 59H/5AH (Top/Bottom) 29LV004C: B5H/B6H (Top/Bottom) 29LV008C: 3EH/37H (Top/Bottom) 2. For sector protect verify result, 00H means sector is not protected, 01H means sector has been protected. 3. Sector Protect command is valid during Vhv at RESET# pin, Vih at A1 pin and Vil at A0, A6 pins. The last Bus cyc is for protect verify. 4.For MX29LV002C/002NC and MX29LV004C. 5. It is not allowed to adopt any other code which is not in the above command definition table. P/N:PM1301 REV. 2.0, DEC. 15, 2011 16 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B RESET In the following situations, executing reset command will reset device back to read array mode: • Among erase command sequence (before the full command set is completed) • Sector erase time-out period • Erase fail (while Q5 is high) • Among program command sequence (before the full command set is completed, erase-suspended program included) • Program fail (while Q5 is high, and erase-suspended program fail is included) • Read silicon ID mode • Sector protect verify • CFI mode While device is at the status of program fail or erase fail (Q5 is high), user must issue reset command to reset device back to read array mode. While the device is in read silicon ID mode, sector protect verify or CFI mode, user must issue reset command to reset device back to read array mode. When the device is in the progress of programming (not program fail) or erasing (not erase fail), device will ignore reset command. AUTOMATIC SELECT COMMAND SEQUENCE Automatic Select mode is used to access the manufacturer ID, device ID and to verify whether or not a sector is protected. The automatic select mode has four command cycles. The first two are unlock cycles, and followed by a specific command. The fourth cycle is a normal read cycle, and user can read at any address any number of times without entering another command sequence. The reset command is necessary to exit the Automatic Select mode and back to read array. The following table shows the identification code with corresponding address. Address Data (Hex) Manufacturer ID X00 C2 Device ID X01 ID Top/Bottom Boot Sector (Sector address) X 02 00/01 Unprotected/protected Sector Protect Verify Representation There is an alternative method to that shown in Table 2, which is intended for EPROM programmers and requires Vhv on address bit A9. Notes: Device ID : MX29LV002CT: 59, MX29LV002CB: 5A MX29LV004CT: B5, MX29LV004CB: B6 MX29LV008CT: 3E, MX29LV008CB: 37 P/N:PM1301 REV. 2.0, DEC. 15, 2011 17 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B AUTOMATIC PROGRAMMING The MX29LV002C/MX29LV004C/MX29LV008C T/B can provide the user program function by the form of ByteMode or Word-Mode. As long as the users enter the right cycle defined in the Table.3 (including 2 unlock cycles and A0H), any data user inputs will automatically be programmed into the array. Once the program function is executed, the internal write state controller will automatically execute the algorithms and timings necessary for program and verification, which includes generating suitable program pulse, verifying whether the threshold voltage of the programmed cell is high enough and repeating the program pulse if any of the cells does not pass verification. Meanwhile, the internal control will prohibit the programming to cells that pass verification while the other cells fail in verification in order to avoid over-programming. With the internal write state controller, the device requires the user to write the program command and data only. Programming will only change the bit status from "1" to "0". That is to say, it is impossible to convert the bit status from "0" to "1" by programming. Meanwhile, the internal write verification only detects the errors of the "1" that is not successfully programmed to "0". Any command written to the device during programming will be ignored except hardware reset, which will terminate the program operation after a period of time no more than Tready1. When the embedded program algorithm is complete or the program operation is terminated by hardware reset, the device will return to the reading array data mode. When the embedded program operation is on going, user can confirm if the embedded operation is finished or not by the following methods: Status In progress*1 Finished Exceed time limit Q7 Q7# Q7 Q7# Q6 Toggling Stop toggling Toggling Q5 0 0 1 RY/BY#*2 0 1 0 *1: The status "in progress" means both program mode and erase-suspended program mode. *2: RY/BY# is an open drain output pin and should be weakly connected to Vcc through a pull-up resistor. *3: When an attempt is made to program a protected sector, Q7 will output its complement data or Q6 continues to toggle for about 1us or less and the device returns to read array state without programing the data in the protected sector. P/N:PM1301 REV. 2.0, DEC. 15, 2011 18 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B CHIP ERASE Chip Erase is to erase all the data with "1" and "0" as all "1". It needs 6 cycles to write the action in, and the first two cycles are "unlock" cycles, the third one is a configuration cycle, the fourth and fifth are also "unlock" cycles, and the sixth cycle is the chip erase operation. During chip erasing, all the commands will not be accepted except hardware reset or the working voltage is too low that chip erase will be interrupted. After Chip Erase, the chip will return to the state of Read Array. When the embedded chip erase operation is on going, user can confirm if the embedded operation is finished or not by the following methods: Status Q7 Q6 Q5 Q2 RY/BY# In progress 0 Toggling 0 Toggling 0 Finished 1 Stop toggling 0 1 1 Exceed time limit 0 Toggling 1 Toggling 0 SECTOR ERASE Sector Erase is to erase all the data in a sector with "1" and "0" as all "1". It requires six command cycles to issue. The first two cycles are "unlock cycles", the third one is a configuration cycle, the fourth and fifth are also "unlock cycles" and the sixth cycle is the sector erase command. After the sector erase command sequence is issued, there is a time-out period of 50us counted internally. During the time-out period, additional sector address and sector erase command can be written multiply. Once user enters another sector erase command, the time-out period of 50us is recounted. If user enters any command other than sector eras or erase suspend during time-out period, the erase command would be aborted and the device is reset to read array condition. The number of sectors could be from one sector to all sectors. After time-out period passing by, additional erase command is not accepted and erase embedded operation begins. During sector erasing, all commands will not be accepted except hardware reset and erase suspend and user can check the status as chip erase. When the embedded erase operation is on going, user can confirm if the embedded operation is finished or not by the following methods: Status Time-out period In progress Finished Q7 0 0 1 Q6 Toggling Toggling Stop toggling Q5 0 0 0 Q3 0 1 1 Q2 Toggling Toggling 1 RY/BY#*2 0 0 1 Exceed time limit 0 Toggling 1 1 Toggling 0 *1: The status Q3 is the time-out period indicator. When Q3=0, the device is in time-out period and is acceptible to another sector address to be erased. When Q3=1, the device is in erase operation and only erase suspend is valid. *2: RY/BY# is open drain output pin and should be weakly connected to Vcc through a pull-up resistor. *3: When an attempt is made to erase a protected sector, Q7 will output its complement data or Q6 continues to toggle for 100us or less and the device returned to read array status without erasing the data in the protected sector. P/N:PM1301 REV. 2.0, DEC. 15, 2011 19 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B SECTOR ERASE SUSPEND During sector erasure, sector erase suspend is the only valid command. If user issue erase suspend command in the time-out period of sector erasure, device time-out period will be over immediately and the device will go back to erase-suspended read array mode. If user issue erase suspend command during the sector erase is being operated, device will suspend the ongoing erase operation, and after the Tready1 (<=20uS) suspend finishes and the device will enter erase-suspended read array mode. User can judge if the device has finished erase suspend through Q6, Q7, and RY/BY#. After device has entered erase-suspended read array mode, user can read other sectors not at erase suspend by the speed of Taa; while reading the sector in erase-suspend mode, device will output its status. User can use Q6 and Q2 to judge the sector is erasing or the erase is suspended. Status Erase suspend read in erase suspended sector Erase suspend read in non-erase suspended sector Erase suspend program in non-erase suspended sector Q7 1 Data Q7# Q6 No toggle Data Toggle Q5 0 Data 0 Q3 N/A Data N/A Q2 RY/BY# Toggle 1 Data 1 N/A 0 When the device has suspended erasing, user can execute the command sets except sector erase and chip erase, such as read silicon ID, sector protect verify, program, CFI query and erase resume. SECTOR ERASE RESUME Sector erase resume command is valid only when the device is in erase suspend state. After erase resume, user can issue another erase suspend command, but there should be a 400uS interval between erase resume and the next erase suspend. If user issue infinite suspend-resume loop, or suspend-resume exceeds 1024 times, the time for erasing will increase. P/N:PM1301 REV. 2.0, DEC. 15, 2011 20 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE MX29LV002C/MX29LV004C T/B features CFI mode. Host system can retrieve the operating characteristics, structure and vendor-specified information such as identifying information, memory size, byte/word configuration, operating voltages and timing information of this device by CFI mode. If the system writes the CFI Query command "98h", to address "55h"/"AAh" (depending on Word/Byte mode), the device will enter the CFI Query Mode, any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 4. Once user enters CFI query mode, user can not issue any other commands except reset command. The reset command is required to exit CFI mode and go back to the mode before entering CFI. The system can write the CFI Query command only when the device is in read mode, erase suspend, standby mode or automatic select mode. Table 4-1. CFI mode: Identification Data Values (MX29LV002C/002NC and 004C only) (All values in these tables are in hexadecimal) Description Query-unique ASCII string "QRY" Primary vendor command set and control interface ID code Address for primary algorithm extended query table Alternate vendor command set and control interface ID code Address for alternate algorithm extended query table Address (h) 10 11 12 13 14 15 16 17 18 19 1A Data (h) 0051 0052 0059 0002 0000 0040 0000 0000 0000 0000 0000 Address (h) 1B 1C 1D 1E 1F 20 21 22 23 24 25 26 Data (h) 0027 0036 0000 0000 0004 0000 000A 0000 0005 0000 0004 0000 Table 4-2. CFI Mode: System Interface Data Values Description Vcc supply minimum program/erase voltage Vcc supply maximum program/erase voltage VPP supply minimum program/erase voltage VPP supply maximum program/erase voltage Typical timeout per single word/byte write, 2n us Typical timeout for maximum-size buffer write, 2n us Typical timeout per individual block erase, 2n ms Typical timeout for full chip erase, 2n ms Maximum timeout for word/byte write, 2n times typical Maximum timeout for buffer write, 2n times typical Maximum timeout per individual block erase, 2n times typical Maximum timeout for chip erase, 2n times typical P/N:PM1301 REV. 2.0, DEC. 15, 2011 21 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Table 4-3. CFI Mode: Device Geometry Data Values Description n Device size = 2 in number of bytes (MX29LV002C) Device size = 2n in number of bytes (MX29LV004C) Flash device interface description Maximum number of bytes in buffer write = 2n (not support) Number of erase regions within device Index for Erase Bank Area 1 [2E,2D] = # of same-size sectors in region 1-1 [30, 2F] = sector size in multiples of 256-bytes Index for Erase Bank Area 2 Index for Erase Bank Area 3 Index for Erase Bank Area 4 (for MX29LV002C) Index for Erase Bank Area 4 (for MX29LV004C) P/N:PM1301 Address (h) 27 27 28 29 2A 2B 2C Data (h) 0012 0013 0000 0000 0000 0000 0004 2D 0000 2E 0000 2F 0040 30 0000 31 32 33 34 35 36 37 38 39 39 3A 3B 3C 0001 0000 0020 0000 0000 0000 0080 0000 0002 0006 0000 0000 0001 REV. 2.0, DEC. 15, 2011 22 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values Description Query - Primary extended table, unique ASCII string, PRI Major version number, ASCII Minor version number, ASCII Unlock recognizes address (0= recognize, 1= don't recognize) Erase suspend (2= to both read and program) Sector protect (N= # of sectors/group) Temporary sector unprotect (1=supported) Sector protect/Chip unprotect scheme Simultaneous R/W operation (0=not supported) Burst mode (0=not supported) Page mode (0=not supported) P/N:PM1301 Address (h) 40 41 42 43 44 45 46 47 48 49 4A 4B 4C Data (h) 0050 0052 0049 0031 0030 0000 0002 0001 0001 0004 0000 0000 0000 REV. 2.0, DEC. 15, 2011 23 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B ABSOLUTE MAXIMUM STRESS RATINGS -65oC to +125oC -65oC to +150oC Surrounding Temperature with Bias Storage Temperature Voltage Range VCC -0.5V to +4.0 V RESET#, A9 and OE# -0.5V to +12.5V The other pins Output Short Circuit Current (less than one second) -0.5V to Vcc +0.5V 200 mA OPERATING TEMPERATURE AND VOLTAGE Commercial (C) Grade Surrounding Temperature (TA ) 0°C to +70°C Industrial (I) Grade Surrounding Temperature (TA ) -40°C to +85°C VCC Supply Voltages Full Vcc Range Regulated Vcc Voltage Range +3.0 V to 3.6 V P/N:PM1301 +2.7 V to 3.6 V REV. 2.0, DEC. 15, 2011 24 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B DC CHARACTERISTICS Symbol Iilk Iilk9 Iolk Icr1 Icr2 Description Input Leak A9 Leak Output Leak Read Current (5MHz) Read Current (1MHz) Min. Typ. 7mA 2mA Max. ± 1.0uA 35uA ± 1.0uA 12mA 4mA Icw Write Current 15mA 30mA Isb Standby Current 0.2uA 5uA Isbr Reset Current 0.2uA 5uA Isbs Vil Vih Sleep Mode Current Input Low Voltage Input High Voltage Very High Voltage for hardware Protect/ Unprotect/Auto Select/Temporary Unprotect Output Low Voltage Ouput High Voltage Ouput High Voltage 0.2uA 5uA 0.8V Vcc+0.3V Vhv Vol Voh1 Voh2 -0.5V 0.7xVcc 11.5V 0.85xVcc Vcc-0.4V P/N:PM1301 Remark A9=12.5V CE#=Vil, OE#=Vih CE#=Vil, OE#=Vih CE#=Vil, OE#=Vih, WE#=Vil Vcc=Vcc max, other pin disable Vcc=Vccmax, RESET# enable, other pin disable 12.5V 0.45V Iol=4.0mA Ioh1=-2mA Ioh2=-100uA REV. 2.0, DEC. 15, 2011 25 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B SWITCHING TEST CIRCUITS Vcc 0.1uF R2 TESTED DEVICE CL R1 +3.3V DIODES=IN3064 OR EQUIVALENT R1=6.2K ohm R2=2.7K ohm Test Condition Output Load : 1 TTL gate Output Load Capacitance,CL : 30pF(45Q/55Q/70ns)/100pF(90ns) Rise/Fall Times : 5ns In/Out reference levels :1.5V SWITCHING TEST WAVEFORMS 3.0V 1.5V 1.5V Test Points 0.0V INPUT OUTPUT P/N:PM1301 REV. 2.0, DEC. 15, 2011 26 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B AC CHARACTERISTICS MX29LV002C/002NC Symbol Taa Tce Toe Tdf Description Valid data output after address Valid data output after CE# low Valid data output after OE# low Data output floating after OE# high or CE# high Output hold time from the earliest rising edge of address, Toh CE#, OE# Trc Read period time Twc Write period time Tcwc Command write period time Tas Address setup time Tah Address hold time Tds Data setup time Tdh Data hold time Tvcs Vcc setup time Tcs Chip enable Setup time Tch Chip enable hold time Toes Output enable setup time Read Toeh Output enable hold time Toggle & Data# Polling Tws WE# setup time Twh WE# hold time Tcep CE# pulse width Tceph CE# pulse width high Twp WE# pulse width Twph WE# pulse width high Tbusy Program/Erase active time by RY/BY# Tghwl Read recover time before write Tghel Read recover time before write (CE# Control) Twhwh1 Byte Program operation Twhwh2 Sector Erase Operation Tbal Sector Add hold time P/N:PM1301 Min. Typ. Max. 70/90 70/90 30/35 25/30 Unit ns ns ns ns 0 ns 70/90 70/90 70/90 0 45 35/45 0 50 0 0 0 0 ns ns ns ns ns ns ns us ns ns ns ns 10 ns 0 0 35 30 35 30 ns ns ns ns ns ns ns ns ns us sec us 0 0 90 9 0.7 300 8 50 REV. 2.0, DEC. 15, 2011 27 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV004C (Restricated Vcc=3.0V~3.6V for 45R/55R) Symbol Taa Tce Toe Tdf Description Min. Valid data output after address Valid data output after CE# low Valid data output after OE# low Data output floating after OE# high or CE# high Output hold time from the earliest rising edge of address, Toh 0 CE#, OE# Trc Read period time 45/55/70/90 Twc Write period time 70/90 Tcwc Command write period time 70/90 Tas Address setup time 0 Tah Address hold time 45 Tds Data setup time 35/45 Tdh Data hold time 0 Tvcs Vcc setup time 50 Tcs Chip enable Setup time 0 Tch Chip enable hold time 0 Toes Output enable setup time 0 Read 0 Toeh Output enable hold time Toggle & Data# 10 Polling Tws WE# setup time 0 Twh WE# hold time 0 Tcep CE# pulse width 35 Tceph CE# pulse width high 30 Twp WE# pulse width 35 Twph WE# pulse width high 30 Tbusy Program/Erase active time by RY/BY# Tghwl Read recover time before write 0 Tghel Read recover time before write (CE# Control) 0 Twhwh1 Byte Program operation Twhwh2 Sector Erase Operation Tbal Sector Add hold time Typ. Max. 45/55/70/90 45/55/70/90 30/30/30/35 25/25/25/30 Unit ns ns ns ns ns ns ns ns ns ns ns ns us ns ns ns ns ns 90 9 0.7 300 8 50 ns ns ns ns ns ns ns ns ns us sec us Notes: Only 40-TSOP provide RY/BY# pin. P/N:PM1301 REV. 2.0, DEC. 15, 2011 28 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV008C (Restricated Vcc=3.0V~3.6V for 55R) Symbol Taa Tce Toe Tdf Description Valid data output after address Valid data output after CE# low Valid data output after OE# low Data output floating after OE# high or CE# high Output hold time from the earliest rising edge of address, Toh CE#, OE# Trc Read period time Twc Write period time Tcwc Command write period time Tas Address setup time Tah Address hold time Tds Data setup time Tdh Data hold time Tvcs Vcc setup time Tcs Chip enable Setup time Tch Chip enable hold time Toes Output enable setup time Read Toeh Output enable hold time Toggle & Data# Polling Tws WE# setup time Twh WE# hold time Tcep CE# pulse width Tceph CE# pulse width high Twp WE# pulse width Twph WE# pulse width high Tbusy Program/Erase active time by RY/BY# Tghwl Read recover time before write Tghel Read recover time before write (CE# Control) Twhwh1 Byte Program operation Twhwh2 Sector Erase Operation Tbal Sector Add hold time P/N:PM1301 Min. Typ. Max. 55/70/90 55/70/90 30/30/35 25/25/30 Unit ns ns ns ns 0 ns 55/70/90 70/90 70/90 0 45 35/45 0 50 0 0 0 0 ns ns ns ns ns ns ns us ns ns ns ns 10 ns 0 0 35 30 35 30 ns ns ns ns ns ns ns ns ns us sec us 0 0 90 9 0.7 300 8 50 REV. 2.0, DEC. 15, 2011 29 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 1. COMMAND WRITE OPERATION Tcwc CE# Vih Vil Tcs WE# Tch Vih Vil Toes OE# Twph Twp Vih Vil Addresses Vih VA Vil Tah Tas Tdh Tds Data Vih Vil DIN VA: Valid Address P/N:PM1301 REV. 2.0, DEC. 15, 2011 30 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B READ/RESET OPERATION Figure 2. READ TIMING WAVEFORMS CE# Tce Vih Vil Vih WE# OE# Vil Toeh Tdf Toe Vih Vil Toh Taa Trc Vih Addresses Outputs ADD Valid Vil Voh HIGH Z DATA Valid HIGH Z Vol P/N:PM1301 REV. 2.0, DEC. 15, 2011 31 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B AC CHARACTERISTICS Item Trp1 Trp2 Trh Trb1 Trb2 Description RESET# Pulse Width (During Automatic Algorithms) RESET# Pulse Width (NOT During Automatic Algorithms) RESET# High Time Before Read RY/BY# Recovery Time (to CE#, OE# go low) RY/BY# Recovery Time (to WE# go low) RESET# PIN Low (During Automatic Algorithms) to Read or Tready1 Write Algorithms) to Read or Write Tready2 RESET# PIN Low (NOT During Automatic Setup MIN MIN MIN MIN MIN Speed 500 500 50 0 50 Unit ns ns ns ns ns MAX 20 us MAX 500 ns Figure 3. RESET# TIMING WAVEFORM Trb1 CE#, OE# Trb2 WE# Tready1 RY/BY# RESET# Trp1 Reset Timing during Automatic Algorithms CE#, OE# Trh RY/BY# RESET# Trp2 Tready2 Reset Timing NOT during Automatic Algorithms P/N:PM1301 REV. 2.0, DEC. 15, 2011 32 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B ERASE/PROGRAM OPERATION Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM CE# Tch Twp WE# Twph Tcs Tghwl OE# Last 2 Erase Command Cycle Twc Address 2AAh VA SA Tds Data Read Status Tah Tas Tdh 55h VA In Progress Complete 10h Tbusy Trb RY/BY# SA: 555h for chip erase P/N:PM1301 REV. 2.0, DEC. 15, 2011 33 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H Data# Polling Algorithm or Toggle Bit Algorithm NO Data=FFh ? YES Auto Chip Erase Completed P/N:PM1301 REV. 2.0, DEC. 15, 2011 34 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM Read Status CE# Tch Twhwh2 Twp WE# Twph Tcs Tghwl OE# Tbal Last 2 Erase Command Cycle Twc Address Tas Sector Address 0 2AAh Tds Data Tdh 55h Sector Address 1 Sector Address n Tah VA VA In Progress Complete 30h 30h Tbusy 30h Trb RY/BY# P/N:PM1301 REV. 2.0, DEC. 15, 2011 35 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address Last Sector to Erase NO YES Data# Polling Algorithm or Toggle Bit Algorithm Data=FFh NO YES Auto Sector Erase Completed P/N:PM1301 REV. 2.0, DEC. 15, 2011 36 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 8. ERASE SUSPEND/RESUME FLOWCHART START Write Data B0H NO Toggle Bit checking Q6 ERASE SUSPEND not toggled YES Read Array or Program Reading or Programming End NO YES Write Data 30H ERASE RESUME Continue Erase Another Erase Suspend ? NO YES P/N:PM1301 REV. 2.0, DEC. 15, 2011 37 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORMS CE# Tch Twhwh1 Twp WE# Tcs Twph Tghwl OE# Last 2 Program Command Cycle Address 555h VA PA Tds Data Last 2 Read Status Cycle Tah Tas VA Tdh A0h Status PD Tbusy DOUT Trb RY/BY# P/N:PM1301 REV. 2.0, DEC. 15, 2011 38 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 10. CE# CONTROLLED WRITE TIMING WAVEFORM WE# Twhwh1 or Twhwh2 Tcep CE# Tceph Tghwl OE# Tah Tas Address 555h Tds Data VA PA VA Tdh A0h Status PD DOUT Tbusy RY/BY# P/N:PM1301 REV. 2.0, DEC. 15, 2011 39 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 11. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Data# Polling Algorithm or Toggle Bit Algorithm next address Read Again Data: Program Data? No YES No Last Word to be Programed YES Auto Program Completed P/N:PM1301 REV. 2.0, DEC. 15, 2011 40 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B SECTOR PROTECT/CHIP UNPROTECT Figure 12. Sector Protect/Chip Unprotect Waveform (RESET# Control) 150us: Sector Protect 15ms: Chip Unprotect 1us CE# WE# OE# Verification Data 60h SA, A6 A1, A0 60h 40h VA VA Status VA Vhv RESET# Vih VA: valid address P/N:PM1301 REV. 2.0, DEC. 15, 2011 41 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 13-1. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv START Retry count=0 RESET#=Vhv Wait 1us Temporary Unprotect Mode No First CMD=60h? Yes Write Sector Address with [A6,A1,A0]:[0,1,0] data: 60h Wait 150us Reset PLSCNT=1 Write Sector Address with [A6,A1,A0]:[0,1,0] data: 40h Retry Count +1 Read at Sector Address with [A6,A1,A0]:[0,1,0] No Retry Count=25? No Data=01h? Yes Yes Device fail Protect another sector? Yes No Temporary Unprotect Mode RESET#=Vih Write RESET CMD Sector Protect Done P/N:PM1301 REV. 2.0, DEC. 15, 2011 42 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 13-2. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv START Retry count=0 RESET#=Vhv Wait 1us Temporary Unprotect No First CMD=60h? Yes All sectors protected? No Protect All Sectors Yes Write [A6,A1,A0]:[1,1,0] data: 60h Wait 15ms Write [A6,A1,A0]:[1,1,0] data: 40h Retry Count +1 Read [A6,A1,A0]:[1,1,0] No Retry Count=1000? No Data=00h? Yes Device fail Yes Temporary Unprotect Write reset CMD Chip Unprotect Done P/N:PM1301 REV. 2.0, DEC. 15, 2011 43 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 14. SECTOR PROTECT TIMING WAVEFORM (A9, OE# Control) CE# Twpp1 WE# Toesp 12V 3V Verify OE# Tvlht Tvlht A1 A6 12V 3V A9 AM-A13 Tvlht Sector Address Data 01H F0H Toe Notes: Tvlht (Voltage transition time)=4us min. Twpp1 (Write pulse width for sector protect)=100ns min, 10us(Typ.) Twpp2 (Write pulse width for chip unprotected)=100ns min, 12ms(Typ.) Toesp (OE# setup time to WE# active)=4us min. P/N:PM1301 REV. 2.0, DEC. 15, 2011 44 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 15. SECTOR PROTECTION ALGORITHM (A9, OE# Control) START Write Sector Addr Retry Count=0 OE#=Vhv, A9=Vhv, CE#=Vil A6=Vil Activate WE# Pulse Time Out 150us Retry Count+1 WE#=Vih, CE#=OE#=Vil A9=Vhv Read at Sector Address with A1=1 No PLSCNT=32? . No Data=01H? Yes Device Failed Protect Another Sector? Yes Remove Vhv from A9 Write Reset Command Sector Protect Done P/N:PM1301 REV. 2.0, DEC. 15, 2011 45 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE# Control) CE# Twpp2 WE# Toesp Verify 12V VCC OE# Tvlht Tvlht A1 12V VCC A9 Tvlht A6 AM-A13 Sector Address Data 00H F0H Toe Notes: Tvlht (Voltage transition time)=4us min. Twpp1 (Write pulse width for sector protect)=100ns min, 10us(Typ.) Twpp2 (Write pulse width for chip unprotected)=100ns min, 12ms(Typ.) Toesp (OE# setup time to WE# active)=4us min. P/N:PM1301 REV. 2.0, DEC. 15, 2011 46 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 17. CHIP UNPROTECTION ALGORITHM (A9, OE# Control) START Protect All Sectors Retry Count=0 OE#=A9=Vhv CE#=Vil, A6=Vih Activate WE# Pulse Time Out 50ms Retry Count +1 Sector Protect Verify from first sector with CE#=OE#=vil, A9=Vhv, A1=1 No Data=00H? go to next sector No Yes No All sectors have been verified? PLSCNT=1000? Yes Device Failed Yes Remove Vhv from A9 Write Reset Command Chip Unprotect Done * Before chip unprotect, all sectors should be protected. P/N:PM1301 REV. 2.0, DEC. 15, 2011 47 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Table 5. TEMPORARY SECTOR UNPROTECT Parameter Alt Description Condition Speed Unit Trpvhh Tvidr RESET# Rise Time to Vhv and Vhv Fall Time to RESET# MIN 500 ns Tvhhwl Trsp RESET# Vhv to WE# Low MIN 4 us Figure 18. TEMPORARY SECTOR UNPROTECT WAVEFORMS Program or Erase Command Sequence CE# WE# Tvhhwl RY/BY# Vhv 12V RESET# 0 or Vih Vil or Vih Trpvhh Trpvhh P/N:PM1301 REV. 2.0, DEC. 15, 2011 48 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 19. TEMPORARY SECTOR UNPROTECT FLOWCHART Start Apply Reset# pin Vhv Volt Enter Program or Erase Mode Mode Operation Completed (1) Remove Vhv Volt from Reset# (2) RESET# = Vih Completed Temporary Sector Unprotected Mode Notes: 1. Temporary unprotect all protected sectors Vhv=11.5~12.5V. 2. The protected conditions of the protected sectors are the same to temporary sector unprotect mode. P/N:PM1301 REV. 2.0, DEC. 15, 2011 49 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 20. SILICON ID READ TIMING WAVEFORM CE# Vih Vil Tce Vih WE# Vil Toe Vih OE# Tdf Vil Toh Toh Vhv Vih A9 A0 Vil Vih Vil Taa A1 Taa Vih Vil ADD DATA Q0-Q7 Vih Vil Vih Vil DATA OUT DATA OUT C2H Device ID Notes: Device ID : MX29LV002CT: 59, MX29LV002CB: 5A MX29LV004CT: B5, MX29LV004CB: B6 MX29LV008CT: 3E, MX29LV008CB: 37 P/N:PM1301 REV. 2.0, DEC. 15, 2011 50 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B WRITE OPERATION STATUS Figure 21. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) Tce CE# Tch WE# Toe OE# Toeh Tdf Trc Address VA VA Taa Toh Q7 Complement Complement True Valid Data Q0-Q6 Status Data Status Data True Valid Data High Z High Z Tbusy RY/BY# P/N:PM1301 REV. 2.0, DEC. 15, 2011 51 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 22. Data# Polling Algorithm Start Read Q7~Q0 at valid address (Note 1) Q7 = Data# ? No Yes No Q5 = 1 ? Yes Read Q7~Q0 at valid address Q7 = Data# ? (Note 2) No Yes FAIL Pass Notes: 1. For programming, valid address means program address. For erasing, valid address means erase sectors address. 2.Q7 should be rechecked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM1301 REV. 2.0, DEC. 15, 2011 52 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 23. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) Tce CE# Tch WE# Toe OE# Toeh Tdf Trc Address VA VA VA VA Taa Toh Q6/Q2 Valid Status (first read) Valid Status Valid Data (second read) (stops toggling) Valid Data Tbusy RY/BY# VA : Valid Address P/N:PM1301 REV. 2.0, DEC. 15, 2011 53 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Figure 24. Toggle Bit Algorithm Start Read Q7-Q0 Twice (Note 1) NO Q6 Toggle ? YES NO Q5 = 1? YES Read Q7~Q0 Twice NO Q6 Toggle ? YES PGM/ERS fail Write Reset CMD PGM/ERS Complete Notes: 1. Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 changes to "1". P/N:PM1301 REV. 2.0, DEC. 15, 2011 54 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B RECOMMENDED OPERATING CONDITIONS At Device Power-Up AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device powerup. If the timing in the figure is ignored, the device may not operate correctly. Vcc Vcc(min) GND Tvr Tvcs Tf CE# WE# Tce Vil Vih Vil Tf OE# WP#/ACC Tr Vil Vih Taa Tr or Tf Valid Address Vil Voh DATA Toe Vih Tr or Tf ADDRESS Tr Vih High Z Valid Ouput Vol Vih Vil Figure A. AC Timing at Device Power-Up Symbol Tvr Tr Tf Parameter Vcc Rise Time Input Signal Rise Time Input Signal Fall Time Min. 20 Max. 500000 20 20 Unit us/V us/V us/V Note: Not tested 100%. P/N:PM1301 REV. 2.0, DEC. 15, 2011 55 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B ERASE AND PROGRAMMING PERFORMANCE Parameter Chip Erase Time Sector Erase Time Erase/Program Cycles Chip Programming Time Byte Programming Time Min. MX29LV002C MX29LV004C MX29LV008C 100,000 MX29LV002C MX29LV004C MX29LV008C Limits Typ. 2.5 4 8 0.7 Max. 16 32 32 8 3.0 4.5 9 9 7 13.5 27 300 Units sec sec sec sec Cycles sec sec sec us DATA RETENTION Parameter Condition Min. Data retention 55˚C 20 Max. Unit years LATCH-UP CHARACTERISTICS Min. -1.0V -1.0V -100mA Input Voltage voltage difference with GND on all pins except I/O pins Input Voltage voltage difference with GND on all I/O pins Vcc Current All pins included except Vcc. Test conditions: Vcc = 3.0V, one pin per testing Max. 12.5V Vcc + 1.0V +100mA PIN CAPACITANCE Parameter Symbol CIN2 COUT CIN Parameter Description Control Pin Capacitance Output Capacitance Input Capacitance Test Set VIN=0 VOUT=0 VIN=0 P/N:PM1301 Typ. Max. 12 12 8 Unit pF pF pF REV. 2.0, DEC. 15, 2011 56 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B ORDERING INFORMATION MX29LV002C MX29LV002CTTC-70G Access Time (ns) 70 MX29LV002CTTC-90G 90 30 5 32 Pin TSOP MX29LV002CBTC-70G 70 30 5 32 Pin TSOP MX29LV002CBTC-90G 90 30 5 32 Pin TSOP MX29LV002CTTI-70G 70 30 5 32 Pin TSOP MX29LV002CTTI-90G 90 30 5 32 Pin TSOP MX29LV002CBTI-70G 70 30 5 32 Pin TSOP MX29LV002CBTI-90G 90 30 5 32 Pin TSOP MX29LV002CTQC-70G 70 30 5 32 Pin PLCC MX29LV002CTQC-90G 90 30 5 32 Pin PLCC MX29LV002CBQC-70G 70 30 5 32 Pin PLCC MX29LV002CBQC-90G 90 30 5 32 Pin PLCC MX29LV002CTQI-70G 70 30 5 32 Pin PLCC MX29LV002CTQI-90G 90 30 5 32 Pin PLCC MX29LV002CBQI-70G 70 30 5 32 Pin PLCC MX29LV002CBQI-90G 90 30 5 32 Pin PLCC PART NO. Operating Current Standby Current MAX. (mA) MAX. (uA) 30 5 P/N:PM1301 PACKAGE Remark 32 Pin TSOP REV. 2.0, DEC. 15, 2011 57 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV002NC MX29LV002NCTTC-70G Access Time (ns) 70 MX29LV002NCTTC-90G 90 30 5 32 Pin TSOP MX29LV002NCBTC-70G 70 30 5 32 Pin TSOP MX29LV002NCBTC-90G 90 30 5 32 Pin TSOP MX29LV002NCTTI-70G 70 30 5 32 Pin TSOP MX29LV002NCTTI-90G 90 30 5 32 Pin TSOP MX29LV002NCBTI-70G 70 30 5 32 Pin TSOP MX29LV002NCBTI-90G 90 30 5 32 Pin TSOP MX29LV002NCTQC-70G 70 30 5 32 Pin PLCC MX29LV002NCTQC-90G 90 30 5 32 Pin PLCC MX29LV002NCBQC-70G 70 30 5 32 Pin PLCC MX29LV002NCBQC-90G 90 30 5 32 Pin PLCC MX29LV002NCTQI-70G 70 30 5 32 Pin PLCC MX29LV002NCTQI-90G 90 30 5 32 Pin PLCC MX29LV002NCBQI-70G 70 30 5 32 Pin PLCC MX29LV002NCBQI-90G 90 30 5 32 Pin PLCC PART NO. Operating Current Standby Current MAX. (mA) MAX. (uA) 30 5 P/N:PM1301 PACKAGE Remark 32 Pin TSOP REV. 2.0, DEC. 15, 2011 58 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV004C MX29LV004CTTC-55Q Access Time (ns) 55 MX29LV004CBTC-55Q 55 30 5 40 Pin TSOP MX29LV004CTTC-70G 70 30 5 40 Pin TSOP MX29LV004CBTC-70G 70 30 5 40 Pin TSOP MX29LV004CTTC-90G 90 30 5 40 Pin TSOP MX29LV004CBTC-90G 90 30 5 40 Pin TSOP MX29LV004CTTI-55Q 55 30 5 40 Pin TSOP MX29LV004CBTI-55Q 55 30 5 40 Pin TSOP MX29LV004CTTI-70G 70 30 5 40 Pin TSOP MX29LV004CBTI-70G 70 30 5 40 Pin TSOP MX29LV004CTTI-90G 90 30 5 40 Pin TSOP MX29LV004CBTI-90G 90 30 5 40 Pin TSOP MX29LV004CTQC-55Q 55 30 5 32 Pin PLCC MX29LV004CBQC-55Q 55 30 5 32 Pin PLCC MX29LV004CTQC-70G 70 30 5 32 Pin PLCC MX29LV004CBQC-70G 70 30 5 32 Pin PLCC MX29LV004CTQC-90G 90 30 5 32 Pin PLCC MX29LV004CBQC-90G 90 30 5 32 Pin PLCC MX29LV004CTQI-55Q 55 30 5 32 Pin PLCC MX29LV004CBQI-55Q 55 30 5 32 Pin PLCC MX29LV004CTQI-70G 70 30 5 32 Pin PLCC MX29LV004CBQI-70G 70 30 5 32 Pin PLCC MX29LV004CTQI-90G 90 30 5 32 Pin PLCC MX29LV004CBQI-90G 90 30 5 32 Pin PLCC MX29LV004CTTI-45Q 45 30 5 40 Pin TSOP MX29LV004CBTI-45Q 45 30 5 40 Pin TSOP PART NO. Operating Current Standby Current MAX. (mA) MAX. (uA) 30 5 PACKAGE Remark 40 Pin TSOP * 40-TSOP is not recommended for new design in. P/N:PM1301 REV. 2.0, DEC. 15, 2011 59 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B MX29LV008C PART NO. MX29LV008CTTC-55Q MX29LV008CTTC-70G MX29LV008CTTC-90G MX29LV008CBTC-55Q MX29LV008CBTC-70G MX29LV008CBTC-90G MX29LV008CTTI-55Q MX29LV008CTTI-70G MX29LV008CTTI-90G MX29LV008CBTI-55Q MX29LV008CBTI-70G MX29LV008CBTI-90G Access Time (ns) 55 70 90 55 70 90 55 70 90 55 70 90 Operating Current Standby Current MAX. (mA) MAX. (uA) 30 5 30 5 30 5 30 5 30 5 30 5 30 5 30 5 30 5 30 5 30 5 30 5 PACKAGE Remark 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP * 40-TSOP is not recommended for new design in. P/N:PM1301 REV. 2.0, DEC. 15, 2011 60 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B PART NAME DESCRIPTION MX 29 LV 002 C T T C 70 G OPTION: G: RoHS compliant package Q: Restricted Vcc (3.0V~3.6V) with RoHS compliant package SPEED: 45: 45ns 55: 55ns 70: 70ns 90: 90ns TEMPERATURE RANGE: C: Commercial (0° C to 70° C) I: Industrial (-40° C to 85° C) PACKAGE: Q: PLCC T: TSOP BOOT BLOCK TYPE: T: Top Boot B: Bottom Boot REVISION: C DENSITY & MODE: 002/002N: 2Mb, x8 Boot Block 004: 4Mb, x8 Boot Block 008: 8Mb, x8 Boot Block TYPE: LV: 3V DEVICE: 29:Flash P/N:PM1301 REV. 2.0, DEC. 15, 2011 61 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B PACKAGE INFORMATION P/N:PM1301 REV. 2.0, DEC. 15, 2011 62 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B P/N:PM1301 REV. 2.0, DEC. 15, 2011 63 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B P/N:PM1301 REV. 2.0, DEC. 15, 2011 64 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B REVISION HISTORY Revision No. Description 1.1 1. Corrected wrong CFI address data 1.2 1. Added statement 1.3 1. Correct typo 1.4 1. Revised statement 1.5 1. Added note 5 into table 3. Command Definitions 1.6 1. Modified Figure 10. CE# Controlled Write Timing Waveform 1.7 1. Modified Erase and Programming Performance table 2. 40-TSOP is not recommended for new design in 3. Revised Twc, Tcwc, Tds timing spec 4. Removed non Pb-free part no. 1.8 1. Modified wrong sector architecture of MX29LV002CT 1.9 1. Added data retention table 2. Changed data retention from 10-years to 20-years 3. Modified the sector erase time max from 15s to 8s 2.0 1. Modified description for RoHS compliance 2. Added note P/N:PM1301 Page Date P21~23 AUG/25/2006 P67 NOV/06/2006 P16,18,19, DEC/12/2007 P42,52 P21 DEC/28/2007 P16 JAN/17/2008 P39 FEB/21/2008 P56 JUL/31/2008 P1,59,60 P28 P57~61 P6 OCT/21/2008 P56 JUL/06/2009 P1 P27~29,56 P1,61 DEC/15/2011 P55 REV. 2.0, DEC. 15, 2011 65 MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B Except for customized products which has been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. 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