ATA2526 - Complete

ATA2526
Low-voltage IR Receiver ASSP
DATASHEET
Features
● No external components except PIN diode
● Supply-voltage range: 2.7V to 5.5V
● High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong
signal adaption (ATC)
● Automatic supply voltage adaptation
● High immunity against disturbances from daylight and lamps
● Small size and innovative pad layout
● Available for carrier frequencies between 33kHz to 40kHz and 56kHz; adjusted by
zener diode fusing ±2.5%
● TTL and CMOS compatible
Applications
● Home entertainment applications
● Home appliances
● Remote control equipment
4905G-AUTO-04/14
1.
Description
The Atmel® IC ATA2526 is a complete IR receiver for data communication that has been developed and optimized for use in
carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of
noise as caused by daylight and lamps. An innovative and patented pad layout offers unique flexibility for IR receiver module
assembly. The Atmel ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56kHz) and 3 different noise
suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume remote
control solutions (please refer to selection guide available for Atmel ATA2525/ATA2526). The Atmel ATA2526 operates in a
supply voltage range of 2.7V to 5.5V.
The function of the Atmel ATA2526 can be described using the block diagram of Figure 1-1. The input stage has two main
functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are
transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a controlled
gain amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is
equivalent to the chosen carrier frequency of the input signal. The demodulator is used first to convert the input burst signal
to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at
the output pin. This is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the
present environmental conditions (ambient light, modulated lamps etc.). Other features can be used to adapt the device to
the individual application to ensure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
Input
Oscillator
CGA and
Filter
Demodulator
AGC/ATC and Digital Control
Carrier Frequency f0
ATA2526
Modulated IR Signal
min 6 or 10 Pulses
GND
2
ATA2526 [DATASHEET]
4905G–AUTO–04/14
OUT
Microcontroller
2.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Symbol
Value
Unit
VS
–0.3 to +6
V
Supply voltage
Supply current
IS
3
mA
Input voltage
VIN
–0.3 to VS
V
Input DC current at VS = 5V
IIN
0.75
mA
Output voltage
VO
–0.3 to VS
V
Output current
IO
10
mA
Operating temperature
Tamb
–25 to +85
°C
Storage temperature
Tstg
–40 to +125
°C
Power dissipation at Tamb = 25°C
Ptot
30
mW
3.
Electrical Characteristics, 3-V Operation
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No.
1
Parameters
Symbol
Min.
Typ.
Max.
Supply-voltage range
1.2
Supply current
IIN =0
VS
2.7
3.0
IS
0.7
0.9
Type*
3.3
V
C
1.3
mA
B
k
A
250
mV
B
VS
V
B
mA
B
µA
C
Output
2.1
Internal pull-up resistor
Tamb = 25°C
see Figure 5-10 on page 9
RPU
2.2
Output voltage low
R2 = 1.4k
see Figure 5-10 on page 9
VOL
2.3
Output voltage high
2.4
Output current clamping
3
Unit
Supply
1.1
2
Test Conditions
VOH
R2 = 0
see Figure 5-10 on page 9
IOCL
40
VS – 0.25
8
Input
3.1
Input DC current
VIN = 0
see Figure 5-10 on page 9
IIN_DCMAX
3.2
Input DC current
see Figure 5-3 on page 6
VIN = 0; VS = 3V
Tamb = 25°C
IIN_DCMAX
–350
µA
B
IEemin
–800
pA
B
IEemin
–1600
pA
C
3.3
3.4
Minimum detection threshold Test signal:
current
see Figure 5-9 on page 9
see Figure 5-1 on page 6
VS = 3V
Tamb= 25°C, IIN_DC=1µA
Minimum detection threshold square pp
burst N = 16
current with AC current
f = f0; tPER = 10ms
disturbance IIN_AC100 =
see
Figure 5-8 on page 8
3µA at 100Hz
BER = 50(1)
–150
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
ATA2526 [DATASHEET]
4905G–AUTO–04/14
3
3.
Electrical Characteristics, 3-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No.
Parameters
3.5
Test signal:
see Figure 5-9 on page 9
VS = 3V, Tamb = 25°C
Maximum detection threshold IIN_DC = 1µA
current with
square pp
VIN > 0V
burst N = 16
f = f0; tPER = 10ms
see Figure 5-8 on page 8
BER = 5%(1)
4
Test Conditions
Symbol
Min.
IEemax
–200
Typ.
Max.
Unit
Type*
µA
D
Controlled Amplifier and Filter
4.1
Maximum value of variable
gain (CGA)
VS = 3V, Tamb = 25°C
GVARMAX
50
dB
D
4.2
Minimum value of variable
gain (CGA)
VS = 3V, Tamb = 25°C
GVARMIN
–6
dB
D
4.3
Total internal amplification(2)
VS = 3V, Tamb = 25°C
GMAX
72
dB
D
4.4
Center frequency fusing
accuracy of bandpass
VS = 3V, Tamb = 25°C
f03V_FUSE
–2.5
f0
+2.5
%
A
4.5
Overall accuracy center
frequency of bandpass
f03V
–5.5
f0
+3.5
%
C
4.6
Overall accuracy center
frequency of bandpass
Tamb = 0 to 70°C
f03V
–4.5
f0
+3.0
%
C
4.7
BPF bandwidth
–3dB; f0 = 38kHz;
see Figure 5-7 on page 8
kHz
C
B
3.8
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4.
Electrical Characteristics, 5-V Operation
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No.
5
Parameters
5.1
Supply-voltage range
5.2
Supply current
6
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
VS
4.5
5.0
5.5
V
C
IS
0.9
1.2
1.6
mA
B
k
A
250
mV
B
VS
V
B
mA
B
Supply
IIN =0
Output
6.1
Internal pull-up resistor
Tamb = 25°C
see Figure 5-10 on page 9
RPU
6.2
Output voltage low
R2 = 2.4k
see Figure 5-10 on page 9
VOL
6.3
Output voltage high
6.4
Output current clamping
VOH
R2 = 0
see Figure 5-10 on page 9
IOCL
40
VS – 0.25
8
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2.
4
After transformation of input current into voltage
ATA2526 [DATASHEET]
4905G–AUTO–04/14
4.
Electrical Characteristics, 5-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No.
7
Parameters
Test Conditions
Symbol
Min.
–400
Typ.
Max.
Unit
Type*
µA
C
Input
7.1
Input DC current
VIN = 0
see Figure 5-10 on page 9
IIN_DCMAX
7.2
Input DC current
see Figure 5-4 on page 7
VIN = 0; VS = 5V
Tamb = 25°C
IIN_DCMAX
–700
µA
B
7.3
Minimum detection
threshold current
see Figure 5-2 on page 6
IEemin
–1000
pA
B
IEemin
–2500
pA
C
µA
D
7.4
7.5
8
Test signal:
see Figure 5-9 on page 9
VS = 5V
Tamb = 25°C
IIN_DC = 1µA
Minimum detection
square pp
threshold current with AC
burst N = 16
current disturbance
f = f0; tPER = 10ms
IIN_AC100 = 3µA at 100Hz see Figure 5-8 on page 8
BER = 50(1)
Maximum detection
threshold current with
VIN > 0V
Test signal:
see Figure 5-9 on page 9
VS = 5V, Tamb = 25°C
IIN_DC = 1µA
square pp
burst N = 16
f = f0; tPER = 10ms
see Figure 5-8 on page 8
BER = 5%(1)
IEemax
–500
Controlled Amplifier and Filter
8.1
Maximum value of variable
gain (CGA)
VS = 5V, Tamb = 25°C
GVARMAX
50
dB
D
8.2
Minimum value of variable
gain (CGA)
VS = 5V, Tamb = 25°C
GVARMIN
–6
dB
D
8.3
Total internal amplification(2) VS = 5V, Tamb = 25°C
GMAX
72
dB
D
8.4
Resulting center frequency
fusing accuracy
f05V
f03V-FUSE
+ 0.5
%
C
f0 fused at VS = 3V
VS = 5V, Tamb = 25°C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2.
4.1
After transformation of input current into voltage
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
ATA2526 [DATASHEET]
4905G–AUTO–04/14
5
5.
Typical Electrical Curves at Tamb = 25°C
Figure 5-1. IEemin versus IIN_DC, VS = 3V
100
VS = 3V
IEemin (nA)
f = f0
10
1
0
0
1
10
100
1000
100
1000
IIN_DC (µA)
Figure 5-2. IEemin versus IIN_DC, VS = 5V
100
VS = 5V
IEemin (nA)
f = f0
10
1
0
0
1
10
IIN_DC (µA)
Figure 5-3. VIN versus IIN_DC, VS = 3V
3.5
VS = 3V
3.0
f = f0
VIN (V)
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
IIN_DC (µA)
6
ATA2526 [DATASHEET]
4905G–AUTO–04/14
100
1000
Figure 5-4. VIN versus IIN_DC, VS = 5V
3.5
VS = 5V
3.0
f = f0
VIN (V)
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
Figure 5-5. Data Transmission Rate, VS = 3V
4000
3500
3060
3000
Short burst
type
Bits/s
2500
2077
2000
2000
Standard
type
1357
1500
1333
1000
905
Lamp type
500
0
30
35
40
45
50
55
60
f0 (kHz)
Figure 5-6. Data Transmission Rate, VS = 5V
4000
3415
3500
Short burst
type
3000
2317
Bits/s
2500
2179
Standard
type
2000
1479
1500
1404
1000
952
Lamp type
500
0
30
35
40
45
50
55
60
f0 (kHz)
ATA2526 [DATASHEET]
4905G–AUTO–04/14
7
Figure 5-7. Typical Bandpass Curve
1.1
VS = 3V
Relative Amplitude
1.0
0.9
0.8
Bandwidth (-3dB)
0.7
0.6
0.5
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B  –3dB values
Example: Q = 1/(1.047 – 0.954) = 11
Figure 5-8. Illustration of Used Terms, Example: f = 33kHz, burst with 16 pulses, 16 periods
Period (P = 16)
tPER = 970µs
Burst (N = 16 pulses)
tB = 485µs
tGAP > tDON + tDOFF
IN
1
7
16
7
7
33µs (f0 = 33kHz)
OUT
tDON
tDOFF
485µs
Envelope 1
Envelope 16
15520µs
OUT
Telegram Pause
Data Word
Data Word
t
16 ms
TREF = 62ms
8
ATA2526 [DATASHEET]
4905G–AUTO–04/14
Figure 5-9. Test Circuit
IEe = ΔU1/400kΩ
ΔU1
VDD = 3V to 5V
400kΩ
1nF
R 1 = 220Ω
IIN_DC
VS
IIN
IEe
20kΩ
ATA2526
1nF
VPULSE
IPIN_AC100
IN
OUT
GND
ΔU2
+
IIN_DC = ΔU2/40kΩ
20kΩ
f0
C 1 = 4.7µF
16
DC
+
tPER = 10ms
Figure 5-10. Application Circuit
VDD = 3V to 5V
R 2(1) > 2.4kΩ
R 1 = 220Ω
RPU
IS
VS
IOCL
IN
ATA2526
IIN
IN
OUT
Microcontroller
GND
+
IIN_DC
IEe
C1
4.7µF
VIN
VO
C 2(2) = 470pF
(10nF)
ATA2526 [DATASHEET]
4905G–AUTO–04/14
9
6.
Chip Dimensions
Figure 6-1. Chip Size in µm
1080,960
GND
393,839
IN
666,828
scribe
length
OUT
225,496
ATA2526
48,73
VS
Zapping
Versioning
0,0
width
Note:
Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0
Dimensions
Pad metallurgy
Finish
Note:
10
1.
Length inclusive scribe
1.04mm
Width inclusive scribe
1.20mm
Thickness
290µ ±5%
Pads
80µ  80µ
Fusing pads
60µ  60µ
Material
AlCu/AlSiTi(1)
Thickness
0.8µm
Material
Si3N4/SiO2
Thickness
0.7/0.3µm
Value depends on manufacture location.
ATA2526 [DATASHEET]
4905G–AUTO–04/14
7.
Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type Number
D(2)
ATA2526S1xx(1)C-DDW
2175
Standard type: ≥ 10 pulses, high data rate
ATA2526S3xx(1)C-DDW
1400
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data
transmission
ATA2526S7xx(1)C-DDW
3415
Short burst type: ≥ 6 pulses, highest data rate
Notes:
Type
1. xx means carrier frequency value (33, 36, 37, 38 or 40kHz and 56kHz)
2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V (see Figure 5-6 on page 7)
7.1
Pad Layout
Figure 7-1. Pad Layout
GND
IN
OUT
ATA2526
Pad Layout
VS
Table 7-1.
Zapping
Versioning
Pin Description
Symbol
Function
OUT
Data output
VS
Supply voltage
GND
GND
IN
Input pin diode
Zapping
f0 adjust
Versioning
Type adjust
ATA2526 [DATASHEET]
4905G–AUTO–04/14
11
8.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
4905G-AUTO-04/14
 Put datasheet in the latest template
4905F-AUTO-05/10
4905E-AUTO-09/09
 Thermal Resistance table deleted
 Pin columns in Electrical Characteristics tables deleted
 Put datasheet in newest template
 Section 8 “Ordering Information” on page 12 changed
 Features on page 1 changed
 Applications on page 1 changed
 Section 1 “Description” on page 1 changed
 Section 2 “Pin Configuration” on page 2 changed
4905D-AUTO-10/06
 Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V Operation” on
pages 3 to 4 changed
 Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V Operation” on page
5 to 6 changed
 Section 6.1 “ESD” on page 6 deleted
 Figure 7-10 “Application Circuit” on page 10 changed
 Section 9 “Ordering Information” on page 12 changed
 Rename Figure 9-1 on page 12
4905C-AUTO-04/06
4905B-AUTO-04/06
12
ATA2526 [DATASHEET]
4905G–AUTO–04/14
 Section 9 “Ordering Information” on page 12 changed
 Put datasheet in a new template
 Section 8 “Chip Dimensions” on page 11 changed
XXXXXX
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© 2014 Atmel Corporation. / Rev.: 4905G–AUTO–04/14
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