ATA2526 Low-voltage IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 2.7V to 5.5V ● High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong signal adaption (ATC) ● Automatic supply voltage adaptation ● High immunity against disturbances from daylight and lamps ● Small size and innovative pad layout ● Available for carrier frequencies between 33kHz to 40kHz and 56kHz; adjusted by zener diode fusing ±2.5% ● TTL and CMOS compatible Applications ● Home entertainment applications ● Home appliances ● Remote control equipment 4905G-AUTO-04/14 1. Description The Atmel® IC ATA2526 is a complete IR receiver for data communication that has been developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of noise as caused by daylight and lamps. An innovative and patented pad layout offers unique flexibility for IR receiver module assembly. The Atmel ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56kHz) and 3 different noise suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume remote control solutions (please refer to selection guide available for Atmel ATA2525/ATA2526). The Atmel ATA2526 operates in a supply voltage range of 2.7V to 5.5V. The function of the Atmel ATA2526 can be described using the block diagram of Figure 1-1. The input stage has two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a controlled gain amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. This is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other features can be used to adapt the device to the individual application to ensure best transmission quality. Figure 1-1. Block Diagram VS IN Input Oscillator CGA and Filter Demodulator AGC/ATC and Digital Control Carrier Frequency f0 ATA2526 Modulated IR Signal min 6 or 10 Pulses GND 2 ATA2526 [DATASHEET] 4905G–AUTO–04/14 OUT Microcontroller 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Value Unit VS –0.3 to +6 V Supply voltage Supply current IS 3 mA Input voltage VIN –0.3 to VS V Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V Output current IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW 3. Electrical Characteristics, 3-V Operation Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. 1 Parameters Symbol Min. Typ. Max. Supply-voltage range 1.2 Supply current IIN =0 VS 2.7 3.0 IS 0.7 0.9 Type* 3.3 V C 1.3 mA B k A 250 mV B VS V B mA B µA C Output 2.1 Internal pull-up resistor Tamb = 25°C see Figure 5-10 on page 9 RPU 2.2 Output voltage low R2 = 1.4k see Figure 5-10 on page 9 VOL 2.3 Output voltage high 2.4 Output current clamping 3 Unit Supply 1.1 2 Test Conditions VOH R2 = 0 see Figure 5-10 on page 9 IOCL 40 VS – 0.25 8 Input 3.1 Input DC current VIN = 0 see Figure 5-10 on page 9 IIN_DCMAX 3.2 Input DC current see Figure 5-3 on page 6 VIN = 0; VS = 3V Tamb = 25°C IIN_DCMAX –350 µA B IEemin –800 pA B IEemin –1600 pA C 3.3 3.4 Minimum detection threshold Test signal: current see Figure 5-9 on page 9 see Figure 5-1 on page 6 VS = 3V Tamb= 25°C, IIN_DC=1µA Minimum detection threshold square pp burst N = 16 current with AC current f = f0; tPER = 10ms disturbance IIN_AC100 = see Figure 5-8 on page 8 3µA at 100Hz BER = 50(1) –150 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage ATA2526 [DATASHEET] 4905G–AUTO–04/14 3 3. Electrical Characteristics, 3-V Operation (Continued) Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. Parameters 3.5 Test signal: see Figure 5-9 on page 9 VS = 3V, Tamb = 25°C Maximum detection threshold IIN_DC = 1µA current with square pp VIN > 0V burst N = 16 f = f0; tPER = 10ms see Figure 5-8 on page 8 BER = 5%(1) 4 Test Conditions Symbol Min. IEemax –200 Typ. Max. Unit Type* µA D Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) VS = 3V, Tamb = 25°C GVARMAX 50 dB D 4.2 Minimum value of variable gain (CGA) VS = 3V, Tamb = 25°C GVARMIN –6 dB D 4.3 Total internal amplification(2) VS = 3V, Tamb = 25°C GMAX 72 dB D 4.4 Center frequency fusing accuracy of bandpass VS = 3V, Tamb = 25°C f03V_FUSE –2.5 f0 +2.5 % A 4.5 Overall accuracy center frequency of bandpass f03V –5.5 f0 +3.5 % C 4.6 Overall accuracy center frequency of bandpass Tamb = 0 to 70°C f03V –4.5 f0 +3.0 % C 4.7 BPF bandwidth –3dB; f0 = 38kHz; see Figure 5-7 on page 8 kHz C B 3.8 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4. Electrical Characteristics, 5-V Operation Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 5 Parameters 5.1 Supply-voltage range 5.2 Supply current 6 Test Conditions Symbol Min. Typ. Max. Unit Type* VS 4.5 5.0 5.5 V C IS 0.9 1.2 1.6 mA B k A 250 mV B VS V B mA B Supply IIN =0 Output 6.1 Internal pull-up resistor Tamb = 25°C see Figure 5-10 on page 9 RPU 6.2 Output voltage low R2 = 2.4k see Figure 5-10 on page 9 VOL 6.3 Output voltage high 6.4 Output current clamping VOH R2 = 0 see Figure 5-10 on page 9 IOCL 40 VS – 0.25 8 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. 4 After transformation of input current into voltage ATA2526 [DATASHEET] 4905G–AUTO–04/14 4. Electrical Characteristics, 5-V Operation (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 7 Parameters Test Conditions Symbol Min. –400 Typ. Max. Unit Type* µA C Input 7.1 Input DC current VIN = 0 see Figure 5-10 on page 9 IIN_DCMAX 7.2 Input DC current see Figure 5-4 on page 7 VIN = 0; VS = 5V Tamb = 25°C IIN_DCMAX –700 µA B 7.3 Minimum detection threshold current see Figure 5-2 on page 6 IEemin –1000 pA B IEemin –2500 pA C µA D 7.4 7.5 8 Test signal: see Figure 5-9 on page 9 VS = 5V Tamb = 25°C IIN_DC = 1µA Minimum detection square pp threshold current with AC burst N = 16 current disturbance f = f0; tPER = 10ms IIN_AC100 = 3µA at 100Hz see Figure 5-8 on page 8 BER = 50(1) Maximum detection threshold current with VIN > 0V Test signal: see Figure 5-9 on page 9 VS = 5V, Tamb = 25°C IIN_DC = 1µA square pp burst N = 16 f = f0; tPER = 10ms see Figure 5-8 on page 8 BER = 5%(1) IEemax –500 Controlled Amplifier and Filter 8.1 Maximum value of variable gain (CGA) VS = 5V, Tamb = 25°C GVARMAX 50 dB D 8.2 Minimum value of variable gain (CGA) VS = 5V, Tamb = 25°C GVARMIN –6 dB D 8.3 Total internal amplification(2) VS = 5V, Tamb = 25°C GMAX 72 dB D 8.4 Resulting center frequency fusing accuracy f05V f03V-FUSE + 0.5 % C f0 fused at VS = 3V VS = 5V, Tamb = 25°C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. 4.1 After transformation of input current into voltage Reliability Electrical qualification (1000h at 150°C) in molded SO8 plastic package ATA2526 [DATASHEET] 4905G–AUTO–04/14 5 5. Typical Electrical Curves at Tamb = 25°C Figure 5-1. IEemin versus IIN_DC, VS = 3V 100 VS = 3V IEemin (nA) f = f0 10 1 0 0 1 10 100 1000 100 1000 IIN_DC (µA) Figure 5-2. IEemin versus IIN_DC, VS = 5V 100 VS = 5V IEemin (nA) f = f0 10 1 0 0 1 10 IIN_DC (µA) Figure 5-3. VIN versus IIN_DC, VS = 3V 3.5 VS = 3V 3.0 f = f0 VIN (V) 2.5 2.0 1.5 1.0 0.5 0 0 0.1 1 10 IIN_DC (µA) 6 ATA2526 [DATASHEET] 4905G–AUTO–04/14 100 1000 Figure 5-4. VIN versus IIN_DC, VS = 5V 3.5 VS = 5V 3.0 f = f0 VIN (V) 2.5 2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000 IIN_DC (µA) Figure 5-5. Data Transmission Rate, VS = 3V 4000 3500 3060 3000 Short burst type Bits/s 2500 2077 2000 2000 Standard type 1357 1500 1333 1000 905 Lamp type 500 0 30 35 40 45 50 55 60 f0 (kHz) Figure 5-6. Data Transmission Rate, VS = 5V 4000 3415 3500 Short burst type 3000 2317 Bits/s 2500 2179 Standard type 2000 1479 1500 1404 1000 952 Lamp type 500 0 30 35 40 45 50 55 60 f0 (kHz) ATA2526 [DATASHEET] 4905G–AUTO–04/14 7 Figure 5-7. Typical Bandpass Curve 1.1 VS = 3V Relative Amplitude 1.0 0.9 0.8 Bandwidth (-3dB) 0.7 0.6 0.5 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f0 Q = f/f0/B; B –3dB values Example: Q = 1/(1.047 – 0.954) = 11 Figure 5-8. Illustration of Used Terms, Example: f = 33kHz, burst with 16 pulses, 16 periods Period (P = 16) tPER = 970µs Burst (N = 16 pulses) tB = 485µs tGAP > tDON + tDOFF IN 1 7 16 7 7 33µs (f0 = 33kHz) OUT tDON tDOFF 485µs Envelope 1 Envelope 16 15520µs OUT Telegram Pause Data Word Data Word t 16 ms TREF = 62ms 8 ATA2526 [DATASHEET] 4905G–AUTO–04/14 Figure 5-9. Test Circuit IEe = ΔU1/400kΩ ΔU1 VDD = 3V to 5V 400kΩ 1nF R 1 = 220Ω IIN_DC VS IIN IEe 20kΩ ATA2526 1nF VPULSE IPIN_AC100 IN OUT GND ΔU2 + IIN_DC = ΔU2/40kΩ 20kΩ f0 C 1 = 4.7µF 16 DC + tPER = 10ms Figure 5-10. Application Circuit VDD = 3V to 5V R 2(1) > 2.4kΩ R 1 = 220Ω RPU IS VS IOCL IN ATA2526 IIN IN OUT Microcontroller GND + IIN_DC IEe C1 4.7µF VIN VO C 2(2) = 470pF (10nF) ATA2526 [DATASHEET] 4905G–AUTO–04/14 9 6. Chip Dimensions Figure 6-1. Chip Size in µm 1080,960 GND 393,839 IN 666,828 scribe length OUT 225,496 ATA2526 48,73 VS Zapping Versioning 0,0 width Note: Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: 10 1. Length inclusive scribe 1.04mm Width inclusive scribe 1.20mm Thickness 290µ ±5% Pads 80µ 80µ Fusing pads 60µ 60µ Material AlCu/AlSiTi(1) Thickness 0.8µm Material Si3N4/SiO2 Thickness 0.7/0.3µm Value depends on manufacture location. ATA2526 [DATASHEET] 4905G–AUTO–04/14 7. Ordering Information Delivery: unsawn wafers (DDW) in box Extended Type Number D(2) ATA2526S1xx(1)C-DDW 2175 Standard type: ≥ 10 pulses, high data rate ATA2526S3xx(1)C-DDW 1400 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission ATA2526S7xx(1)C-DDW 3415 Short burst type: ≥ 6 pulses, highest data rate Notes: Type 1. xx means carrier frequency value (33, 36, 37, 38 or 40kHz and 56kHz) 2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V (see Figure 5-6 on page 7) 7.1 Pad Layout Figure 7-1. Pad Layout GND IN OUT ATA2526 Pad Layout VS Table 7-1. Zapping Versioning Pin Description Symbol Function OUT Data output VS Supply voltage GND GND IN Input pin diode Zapping f0 adjust Versioning Type adjust ATA2526 [DATASHEET] 4905G–AUTO–04/14 11 8. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4905G-AUTO-04/14 Put datasheet in the latest template 4905F-AUTO-05/10 4905E-AUTO-09/09 Thermal Resistance table deleted Pin columns in Electrical Characteristics tables deleted Put datasheet in newest template Section 8 “Ordering Information” on page 12 changed Features on page 1 changed Applications on page 1 changed Section 1 “Description” on page 1 changed Section 2 “Pin Configuration” on page 2 changed 4905D-AUTO-10/06 Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V Operation” on pages 3 to 4 changed Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V Operation” on page 5 to 6 changed Section 6.1 “ESD” on page 6 deleted Figure 7-10 “Application Circuit” on page 10 changed Section 9 “Ordering Information” on page 12 changed Rename Figure 9-1 on page 12 4905C-AUTO-04/06 4905B-AUTO-04/06 12 ATA2526 [DATASHEET] 4905G–AUTO–04/14 Section 9 “Ordering Information” on page 12 changed Put datasheet in a new template Section 8 “Chip Dimensions” on page 11 changed XXXXXX Atmel Corporation 1600 Technology Drive, San Jose, CA 95110 USA T: (+1)(408) 441.0311 F: (+1)(408) 436.4200 | www.atmel.com © 2014 Atmel Corporation. / Rev.: 4905G–AUTO–04/14 Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. 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