ATBTLC1000 WLCSP SoC - Datasheet

ATBTLC1000 WLCSP SoC
Ultra Low Power BLE 4.1 SoC
DATASHEET
Description
The Atmel® ATBTLC1000 is an ultra-low power Bluetooth® SMART (BLE 4.1) System
on a Chip with Integrated MCU, Transceiver, Modem, MAC, PA, TR Switch, and
Power Management Unit (PMU). It can be used as a Bluetooth Low Energy link
controller or data pump with external host MCU or as a standalone applications
processor with embedded BLE connectivity and external memory.
The qualified Bluetooth Smart protocol stack is stored in dedicated ROM. The
firmware includes L2CAP service layer protocols, Security Manager, Attribute
protocol (ATT), Generic Attribute Profile (GATT), and the Generic Access Profile
(GAP). Additionally, application profiles such as Proximity, Thermometer, Heart Rate,
Blood Pressure, and many others are supported and included in the protocol stack.
Features
 Complies with Bluetooth V4.1, ETSI EN 300 328 and EN 300 440 Class 2, FCC
CFR47 Part 15 and ARIB STD-T66
 2.4GHz transceiver and modem
– -95dBm/-93dBm programmable receiver sensitivity
– -20 to +3.5dBm programmable TX output power
– Integrated T/R switch
– Single wire antenna connection
 ARM® Cortex®-M0 32-bit processor
– Single wire Debug (SWD) interface
– Four-channel DMA controller
– Brownout detector and Power On Reset
– Watch Dog Timer
 Memory
– 128kB embedded RAM (96kB available for application)
– 128kB embedded ROM
 Hardware Security Accelerators
– AES-128
– SHA-256
 Peripherals
– 10 digital and one wakeup GPIOs with 96kΩ internal pull-up resistors, one Mixed
Signal GPIO
– 2x SPI Master/Slave
– 2x I2C Master/Slave and 1x I2C Slave
– 2x UART
– 1x SPI Flash
– Three-Axis quadrature decoder
– 4x Pulse Width Modulation (PWM), three General Purpose Timers, and one
Wakeup Timer
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– 1-channel 11-bit ADC
 Clock
– Integrated 26MHz RC oscillator
– 26MHz crystal oscillator
– Integrated 2MHz sleep RC oscillator
– 32.768kHz RTC crystal oscillator
 Ultra-low power
– 1.1µA sleep current (8KB RAM retention and RTC running)
– 3.0mA peak TX current (0dBm, 3.6V)
– 4.0mA peak RX current (3.6V, -93dBm sensitivity)
– 9.7µA average advertisement current (three channels, 1s interval)
 Integrated Power management
– 1.8 to 4.3V battery voltage range
– Fully integrated Buck DC/DC converter
 Bluetooth SIG Certification
– QD ID Controller (see declaration D028678)
– QD ID Host (see declaration D028679)
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Ta bl e of Conte nts
1
Ordering Information ................................................................................................... 5
2
Package Information ................................................................................................... 5
3
Block Diagram ............................................................................................................. 5
4
Pinout Information....................................................................................................... 6
5
Package Drawing ......................................................................................................... 8
6
Power Management ..................................................................................................... 9
6.1
6.2
6.3
6.4
6.5
7
Clocking ..................................................................................................................... 16
7.1
7.2
7.3
7.4
8
Overview ............................................................................................................................................. 16
26MHz Crystal Oscillator (XO) ............................................................................................................ 17
32.768kHz RTC Crystal Oscillator (RTC XO) ...................................................................................... 18
7.3.1 General Information ................................................................................................................ 18
7.3.2 RTC XO Design and Interface Specification ........................................................................... 20
7.3.3 RTC Characterization with Gm Code Variation at Supply 1.2V and Temp. = 25°C ................ 20
7.3.4 RTC Characterization with Supply Variation and Temp. = 25°C ............................................. 21
2MHz and 26MHz Integrated RC Oscillators ....................................................................................... 22
CPU and Memory Subsystem ................................................................................... 24
8.1
8.2
8.3
9
Power Architecture ................................................................................................................................ 9
DC/DC Converter ................................................................................................................................ 10
Power Consumption ............................................................................................................................ 11
6.3.1 Description of Device States................................................................................................... 11
6.3.2 Controlling the Device States ................................................................................................. 12
6.3.3 Current Consumption in Various Device States...................................................................... 12
Power Sequences ............................................................................................................................... 13
Power on Reset and Brown out Detector ............................................................................................ 14
ARM Subsystem ................................................................................................................................. 24
8.1.1 Features ................................................................................................................................. 24
8.1.2 Module Descriptions ............................................................................................................... 25
Memory Subsystem............................................................................................................................. 27
8.2.1 BLE Retention Memory........................................................................................................... 27
Non-volatile Memory ........................................................................................................................... 27
Bluetooth Low Energy (BLE) Subsystem ................................................................ 28
9.1
9.2
9.3
BLE Core............................................................................................................................................. 28
9.1.1 Features ................................................................................................................................. 28
BLE Radio ........................................................................................................................................... 28
9.2.1 Receiver Performance ............................................................................................................ 28
9.2.2 Transmitter Performance ........................................................................................................ 29
Atmel Bluetooth SmartConnect Stack ................................................................................................. 29
10 External Interfaces .................................................................................................... 31
10.1 Overview ............................................................................................................................................. 31
10.2 I2C Master/Slave Interface .................................................................................................................. 33
10.2.1 Description.............................................................................................................................. 33
10.2.2 I2C Interface Timing ................................................................................................................ 33
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10.3 SPI Master/Slave Interface.................................................................................................................. 34
10.3.1 Description.............................................................................................................................. 34
10.3.2 SPI Interface Modes ............................................................................................................... 35
10.3.3 SPI Slave Timing .................................................................................................................... 36
10.3.4 SPI Master Timing .................................................................................................................. 37
10.4 SPI Flash Master Interface .................................................................................................................. 37
10.4.1 Description.............................................................................................................................. 37
10.4.2 SPI Master Timing .................................................................................................................. 38
10.5 UART Interface ................................................................................................................................... 38
10.6 GPIOs ............................................................................................................................................... 39
10.7 Analog to Digital Converter (ADC)....................................................................................................... 39
10.7.1 Overview................................................................................................................................. 39
10.7.2 Timing ..................................................................................................................................... 40
10.7.3 Performance ........................................................................................................................... 41
10.8 Software Programmable Timer and Pulse Width Modulator ................................................................ 44
10.9 Clock Output ....................................................................................................................................... 44
10.9.1 Variable Frequency Clock Output Using Fractional Divider .................................................... 44
10.9.2 Fixed Frequency Clock Output ............................................................................................... 44
10.10
Three-axis Quadrature Decoder ............................................................................................. 45
11 Reference Design ...................................................................................................... 46
12 Bill of Material (BOM) ................................................................................................ 47
13 Electrical Characteristics .......................................................................................... 48
13.1 Absolute Maximum Ratings................................................................................................................. 48
13.2 Recommended Operating Conditions ................................................................................................. 48
13.3 DC Characteristics .............................................................................................................................. 49
14 Errata .......................................................................................................................... 50
15 Document Revision History ...................................................................................... 51
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WLCSP SoC [DATASHEET]
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Ordering Information
Ordering code
ATBTLC1000A-UU-T
2
Package
31L WLCSP
Description
ATBTLC1000 Tape and Reel
Package Information
Table 2-1.
ATBTLC1000 31L WLCSP Package Information
Parameter
Value
Tolerance
2.262 × 2.142
±0.03
Total thickness
0.502
±0.039
I/O pitch
0.35
Ball diameter
0.2
Ball count
31
Package size
Units
mm
3
±0.03
Block Diagram
Figure 3-1.
ATBTLC1000 Block Diagram
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4
Pinout Information
The ATBTLC1000 is offered in a 0.35mm-pitch staggered SAC405 balls 31L WLCSP package. The WLCSP
package pin assignment is shown in Figure 4-1. The color shading is used to indicate the pin type as follows:

Red – analog

Green – digital I/O (switchable power domain)

Blue – digital I/O (always-on power domain)

Yellow – digital power, purple – PMU

Green/red – configurable mixed-signal GPIO (digital/analog)
The ATBTLC1000 pins are described in Table 4-1.
Figure 4-1.
6
ATBTLC1000 WLCSP Pin Assignment
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Table 4-1.
ATBTLC1000 WLCSP Pin Description
Pin #
Pin Name
Pin Type
Description / Default Function
A2
VDDIO
Digital Power
I/O Supply, can be less than or equal to VBATT_BUCK
A4
XO_P
Analog/RF
XO Crystal +
A6
VDD_VCO & VDD_SXDIG
Analog/RF
Synthesizer VCO and Digital Supplies 1.2V
B1
AO_GPIO_0
Digital I/O
Always-on External Wakeup
B3
VDDIO_SWITCH
Digital Power
I/O supply switch for external flash
B5
XO_N
Analog/RF
XO Crystal -
B7
RFIO
Analog/RF
RX input and TX output
C2
RTC_CLK_P
PMU
RTC terminal + / 32.768kHz XTAL +
C4
TPP
Analog/RF
Test MUX + output
C6
VDD_RF
Analog/RF
RF Supply 1.2V
D1
RTC_CLK_N
PMU
RTC terminal – / 32.768kHz XTAL -
D3
LP_GPIO_13
Digital I/O
SPI MISO/SPI FLASH RXD
D5
LP_GPIO_0
Digital I/O
SWD Clock
D7
RFGND
Analog/RF
RF Ground
E2
CHIP_EN
PMU
Master Enable for chip
E4
VSS
Digital Power
Digital I/O and Core Ground
E6
VDD_AMS
Analog/RF
AMS Supply 1.2V
F1
LP_LDO_OUT_1P2
PMU
Low Power LDO output (connect to 1µF decoupling cap)
F3
GPIO_MS1
Mixed Signal I/O
Configurable to be a GPIO Mixed Signal only (ADC interface)
F5
LP_GPIO_11
Digital I/O
SPI MOSI/SPI FLASH TXD
F7
LP_GPIO_1
Digital I/O
SWD I/O
G2
VBATT_BUCK
PMU
DC/DC Converter Supply and General Battery Connection
G4
LP_GPIO_12
Digital I/O
SPI SSN/SPI FLASH SSN
G6
LP_GPIO_2
Digital I/O
UART RXD
H1
VDDC_PD4
PMU
DC/DC Converter 1.2V output and feedback node
H3
GND_BUCK
PMU
DC/DC Converter Ground
H5
LP_GPIO_9
Digital I/O
I2C SCL (high-drive pad, see Table 13-3)
H7
LP_GPIO_3
Digital I/O
UART TXD
J2
VSW
PMU
DC/DC Converter Switching Node
J4
LP_GPIO_10
Digital I/O
SPI SCK/SPI FLASH SCK
J6
LP_GPIO_8
Digital I/O
I2C SDA (high-drive pad, see Table 13-3)
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5
Package Drawing
The ATBTLC1000 WLCSP package is RoHS/green compliant.
Figure 5-1.
8
ATBTLC1000 31L WLCSP Package Outline Drawing
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Power Management
6.1
Power Architecture
ATBTLC1000 uses an innovative power architecture to eliminate the need for external regulators and reduce the
number of off-chip components. The integrated power management block includes a DC/DC buck converter and
separate Low Drop out (LDO) regulators for different power domains. The DC/DC buck converter converts battery
voltage to a lower internal voltage for the different circuit blocks and does this with high efficiency. The DC/DC
requires three external components for proper operation (two inductors L 4.7µH and 9.1nH, and one capacitor C
4.7µF).
Figure 6-1.
ATBTLC1000 Power Architecture
RF/AMS
VDD_VCO
LDO2
1.0V
~
SX
VDD_AMS,
VDD_RF,
VDD_SXDIG
RF/AMS Core
VDDIO
Digital
RF/AMS Core Voltage
Pads
Digital Core
eFuse
dcdc_ena
PMU
2.5V
Digital Core Voltage
Sleep
Osc
EFuse
LDO
LP LDO
ena
Dig Core
ena LDO
CHIP_EN
VDDC_PD4
ena
DC/DC Converter
VBATT_BUCK
Vin
Vout
VSW
Off-Chip
LC
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6.2
DC/DC Converter
The DC/DC Converter is intended to supply current to the BLE digital core and the RF transceiver core. The
DC/DC consists of a power switch, 26MHz RC oscillator, controller, external inductor, and external capacitor. The
DC/DC is utilizing pulse skipping discontinuous mode as its control scheme. The DC/DC specifications are shown
in the following tables and figures.
Table 6-1.
DC/DC Converter Specifications (Performance is Guaranteed for (L) 4.7µH and (C) 4.7µF
Parameter
Symbol
Min.
Typ.
Max.
Unit
Note
Output current capability
IREG
0
10
30
mA
Dependent on external component values
and DC/DC settings with acceptable efficiency
External capacitor range
CEXT
4.7
-10%
4.7
20
µF
External capacitance range
External inductor range
LEXT
2.2
-10%
4.7
4.7
+10%
µH
External inductance range
Battery voltage
VBAT
2.35
3
4.3
Functionality and stability given
V
Output voltage range
VREG
Current consumption
IDD
1.05
1.2
tstartup
50
Voltage ripple
ΔVREG
5
85
VOS
0
Line Regulation
ΔVREG
10
Load regulation
ΔVREG
5
Table 6-2.
µA
DC/DC quiescent current
600
µs
Dependent on external component values
and DC/DC settings
30
mV
Dependent on external component values
and DC/DC settings
10
η
Overshoot at startup
25mV step size
125
Startup time
Efficiency
1.47
%
Measured at 3V VBAT, at load of 10mA
No overshoot, no output pre-charge
mV
From 1.8 to 4.3V
From 0 to 10mA
DC/DC Converter Allowable Onboard Inductor and Capacitor Values (VBAT = 3V)
Vripple [mV]
Inductor [µH]
Note:
10
RX Sensitivity (1) [dBm]
Efficiency [%]
C=2.2µF
C=4.7µF
C=10µF
2.2
83
N/A
<5
<5
~1.5 dB degrade
4.7
85
9
5
<5
~0.7 dB degrade
1.
Degradation relative to design powered by external LDO and DC/DC disabled.
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Figure 6-2.
DC/DC Converter Efficiency
Efficiency vs. Battery Voltage
95.0
Efficeincy (%)
90.0
85.0
80.0
75.0
70.0
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
4.3
14
15
Battery Voltage (V)
Efficiency vs. Load Current
86.0
85.0
Efficeincy (%)
84.0
83.0
82.0
81.0
80.0
79.0
78.0
77.0
3
4
5
6
7
8
9
10
11
12
13
Load Current (mA)
6.3
Power Consumption
6.3.1
Description of Device States
ATBTLC1000 has multiple device states, depending on the state of the ARM processor and BLE subsystem.
Note:
The ARM is required to be powered on if the BLE subsystem is active.

BLE_On_Transmit – Device is actively transmitting a BLE signal (Application may or may not be active)

BLE_On_Receive – Device is actively receiving a BLE signal (Application may or may not be active)

MCU_Only – Device has ARM processor powered on and BLE subsystem powered down

Ultra_Low_Power – BLE is powered down and Application is powered down (with or without RAM retention)

Power_Down – Device core supply off
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6.3.2
Controlling the Device States
The following pins are used to switch between the main device states:

CHIP_EN – used to enable PMU

VDDIO – I/O supply voltage from external supply
In Power_Down state, VDDIO is on and CHIP_EN is low (at GND level). To switch between Power_Down state
and MCU_Only state CHIP_EN has to change between low and high (VDDIO voltage level). Once the device is
MCU_Only state, all other state transitions are controlled entirely by software. When VDDIO is off and CHIP_EN is
low, the chip is powered off with no leakage.
When no power is supplied to the device (the DC/DC Converter output and VDDIO are both off and at ground
potential), a voltage cannot be applied to the ATBTLC1000 pins because each pin contains an ESD diode from the
pin to supply. This diode will turn on when voltage higher than one diode-drop is supplied to the pin.
If a voltage must be applied to the signal pads while the chip is in a low power state, the VDDIO supply must be
on, so the Power_Down state must be used. Similarly, to prevent the pin-to-ground diode from turning on, do not
apply a voltage that is more than one diode-drop below ground to any pin.
6.3.3
Current Consumption in Various Device States
Table 6-3.
ATBTLC1000 Device Current Consumption at VBAT = 3.6V
Device state
VDDIO
IVBAT (typical)
IVDDIO (typical)
(note 3)
(note 3)
Power_Down
Off
On
<50nA
<50nA
Ultra_Low_Power Standby
On
On
900nA
50nA
Ultra_Low_Power with 8KB retention, BLE
timer, no RTC (1)
On
On
1.1µA
0.2µA
Ultra_Low_Power with 8KB retention, BLE
timer, with RTC (2)
On
On
1.25µA
0.1uA
MCU_Only, idle (waiting for interrupt)
On
On
.85mA
0.2µA
BLE_On_Receive@-95dBm
On
On
4.2mA
0.2µA
BLE_On_Transmit, 0dBm output power
On
On
3.0mA
0.2µA
BLE_On_Transmit, 3.5dBm output power
On
On
4.0mA
0.2µA
Notes:
1.
2.
3.
12
CHIP_EN
Remark
Sleep clock derived from internal 32kHz RC oscillator.
Sleep clock derived from external 32.768kHz crystal specified for CL = 7pF, using the default on-chip capacitance
only, without using external capacitance.
Expected values for production silicon.
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Figure 6-3.
Notes: 1.
6.4
ATBTLC1000 Average Advertising Current
The Average advertising current is measured at VBAT = 3.6V, TX POUT=0dBm.
Power Sequences
The power sequences for ATBTLC1000 is shown in Figure 6-4. The timing parameters are provided
in Table 6-4.
Figure 6-4.
ATBTLC1000 Power Sequences
VBATT
tA
t A'
VDDIO
tB
t B'
CHIP_EN
tC
XO Clock
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Table 6-4.
ATBTLC1000 Sequence Timings
Parameter
Min.
tA
0
tB
0
tC
10
tA1
0
tB1
0
Max.
Units
Description
VBATT rise to VDDIO rise
VBATT and VDDIO can rise simultaneously
or can be tied together
VDDIO rise to CHIP_EN rise
CHIP_EN must not rise before VDDIO.
CHIP_EN must be driven high or low, not left
floating.
ms
µs
Notes
CHIP_EN rise to 31.25kHz
(2MHz/64) oscillator stabilizing
CHIP_EN fall to VDDIO fall
CHIP_EN must fall before VDDIO. CHIP_EN
must be driven high or low, not left floating.
VDDIO fall to VBATT fall
VBATT and VDDIO can fall simultaneously or
be tied together
ms
6.5
Power on Reset and Brown out Detector
The ATBTLC1000 has a Power on Reset (POR) circuit for proper system power bring up and a brown out detector
to reset the system’s operation when a drop in battery voltage is detected.

POR is a power on reset circuit that outputs a HI logic value when the VBATT_BUCK is below a voltage
threshold. The POR output becomes a LO logic value when the VBATT_BUCK is above a voltage threshold.

Brown out Detector (BOD) is a brown out detector that outputs a HI logic value when the bandgap reference
(BGR) voltage falls below a programmable voltage threshold. When the bandgap voltage reference voltage
level is restored above a voltage threshold, the BOD output becomes a LO logic value.

The counter creates a pulse that holds the chip in reset for 256*(64*T_2MHz) ~ 8.2ms
Figure 6-5 and Figure 6-6 illustrate the system block diagram and timing.
Figure 6-5.
14
ATBTLC1000 POR and BOD Block Diagram
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Figure 6-6.
ATBTLC1000 POR and BOD Timing Sequence
Table 6-5.
ATBTLC1000 BOD Thresholds
Parameter
BOD threshold
BOD threshold temperature coefficient
Min.
Typ.
Max.
1.73V
1.80V
1.92V
Comment
-1.09mV/C
BOD current consumption
300nA
tPOR
8.2ms
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7.1
Clocking
Overview
Figure 7-1.
ATBTLC1000 Clock Architecture
26 MHz
26 MHz
XO
×2
52 MHz
BLE Clock
26 MHz
26 MHz
26 MHz
RC Osc
ARM
Clock
Control
ARM Clock
Low
Power
Clock
Control
Low Power
Clock
2 MHz
2 MHz
RC Osc
2 MHz
÷64
32.768 kHz
RTC XO
31.25 kHz
32.768 kHz
Figure 7-1 provides an overview of the clock tree and clock management blocks.
The BLE Clock is used to drive the BLE subsystem. The ARM clock is used to drive the Cortex-M0 MCU and its
interfaces (UART, SPI, and I2C), the nominal MCU clock speed is 26MHz. The Low Power Clock is used to drive
all the low power applications like BLE sleep timer, always-on power sequencer, always-on timer, and others.
The 26MHz Crystal Oscillator (XO) must be used for the BLE operations or in the event a very accurate clock is
required for the ARM subsystem operations.
The 26MHz integrated RC Oscillator is used for most general purpose operations on the MCU and its peripherals.
In cases when the BLE subsystem is not used, the RC oscillator can be used for lower power consumption. The
frequency variation of this RC oscillator is up to ±50% over process, voltage, and temperature.
The 2MHz integrated RC Oscillator can be used as the Low Power Clock for applications that require fast wakeup
of the ARM or for generating a ~31.25kHz clock for slower wakeup but lowest power in sleep mode. This 2MHz
oscillator can also be used as the ARM Clock for low-power applications where the MCU needs to remain on but
run at a reduced clock speed. The frequency variation of this RC oscillator is up to ±50% over process, voltage,
and temperature.
The 32.768kHz RTC Crystal Oscillator (RTC XO) is recommended to be used for BLE operations (although
optional) as it will reduce power consumption by providing the best timing for wakeup precision, allowing circuits to
be in low power sleep mode for as long as possible until they need to wake up and connect during the BLE
connection event. The ~31.25kHz clock derived from the 2MHz integrated RC Oscillator can be used instead of
RTC XO but it has low accuracy over process, voltage and temperature variations (up to ±50%) and thus needs to
be frequently calibrated to within ±500ppm if the RC oscillator is used for BLE timing during a connection event.
Because this clock is less accurate than RTC XO, it will require waking up earlier to prepare for a connection event
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and this will increase the average power consumption. Calibration of the RC Oscillator is described in the
application note.
7.2
26MHz Crystal Oscillator (XO)
Table 7-1.
ATBTLC1000 26MHz Crystal Oscillator Parameters
Parameter
Crystal Resonant Frequency
Min.
Typ.
Max.
Units
N/A
26
N/A
MHz
50
150
Ω
Crystal Equivalent Series Resistance
Stability - Initial Offset (1)
-50
50
Stability - Temperature and Aging
-40
40
ppm
Note:
1.
Initial offset must be calibrated to maintain ±25ppm in all operating conditions. This calibration is performed during
final production testing and calibration offset values are stored in eFuse. More details are provided in the
calibration application note.
The block diagram in Figure 7-2 (a) shows how the internal Crystal Oscillator (XO) is connected to the external
crystal.
The XO has up to 10pF internal capacitance on each terminal XO_P and XO_N (programmable in steps of
1.25pF). To bypass the crystal oscillator, an external Signal capable of driving 10pF can be applied to the XO_P
terminal as shown in Figure 7-2 (b).
The needed external bypass capacitors depend on the chosen crystal characteristics. Refer to the datasheet of the
preferred crystal and take into account the on chip capacitance.
When bypassing XO_P from an external clock, XO_N is required to be floating.
It is recommended that only crystals specified for CL=8pF be used in customer designs since this affects the
sleep/wake up timing of the device. CL other than 8pF may require upgraded firmware and device recharacterization.
Figure 7-2.
ATBTLC1000 Connections to XO
(a) Crystal oscillator is used
(b) Crystal oscillator is bypassed
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Table 7-2.
ATBTLC1000 26MHz XTAL C_onchip Programming
Register
Cl_onchip
rx_xo_regs[7,6,15] = 000
1.00
rx_xo_regs[7,6,15] = 001
2.25
rx_xo_regs[7,6,15] = 010
3.50
rx_xo_regs[7,6,15] = 011
4.75
rx_xo_regs[7,6,15] = 100
6.00
rx_xo_regs[7,6,15] = 101
7.25
rx_xo_regs[7,6,15] = 110
8.50
rx_xo_regs[7,6,15] = 111
9.75
[pF]
If rx_reg7[1] = 1 add 5pF to above value
Table 7-3 specifies the electrical and performance requirements for the external clock.
Table 7-3.
ATBTLC1000 XO Bypass Clock Specification
Parameter
Min.
Max.
Unit
Comments
26
26
MHz
Must be able to drive 5pF load @ desired frequency
Voltage swing
0.75
1.2
Vpp
Stability – Temperature and Aging
-25
+25
ppm
Phase Noise
-130
dBc/Hz
Jitter (RMS)
<1psec
Oscillation frequency
7.3
32.768kHz RTC Crystal Oscillator (RTC XO)
7.3.1
General Information
At 10kHz offset
Based on integrated phase noise spectrum from
1kHz to 1MHz
ATBTLC1000 has a 32.768kHz RTC oscillator that is preferably used for BLE activities involving connection
events. To be compliant with the BLE specifications for connection events, the frequency accuracy of this clock
has to be within ±500ppm. Because of the high accuracy of the 32.768kHz crystal oscillator clock, the power
consumption can be minimized by leaving radio circuits in low-power sleep mode for as long as possible until they
need to wake up for the next connection timed event.
The block diagram in Figure 7-3(a) shows how the internal low frequency Crystal Oscillator (XO) is connected to
the external crystal.
The RTC XO has a programmable internal capacitance with a maximum of 15pF on each terminal, RTC_CLK_P
and RTC_CLK_N. When bypassing the crystal oscillator with an external signal, one can program down the
internal capacitance to its minimum value (~1pF) for easier driving capability. The driving signal can be applied to
the RTC_CLK_P terminal as shown in Figure 7-3 (b).
The need for external bypass capacitors depends on the chosen crystal characteristics. Refer to the datasheet of
the preferred crystal and take into account the on-chip capacitance.
When bypassing RTC_CLK_P from an external clock, RTC_CLK_N is required to be floating.
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Figure 7-3.
ATBTLC1000 Connections to RTC XO
(a) Crystal oscillator is used
Table 7-4.
(b) Crystal oscillator is bypassed
32.768kHz XTAL C_onchip Programming
Register: pierce_cap_ctrl[3:0]
Cl_onchip
0000
0.0
0001
1.0
0010
2.0
0011
3.0
0100
4.0
0101
5.0
0110
6.0
0111
7.0
1000
8.0
1001
9.0
1010
10.0
1011
11.0
1100
12.0
1101
13.0
1110
14.0
1111
15.0
[pF]
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7.3.2
RTC XO Design and Interface Specification
The RTC consists of two main blocks: The Programmable Gm stage and tuning capacitors. The programmable
Gm stage is used to maintain a phase shift of 360°C with the motional arm and keep total negative resistance to
sustain oscillation. Tuning capacitors are used to adjust the XO center frequency and control the XO precision for
different crystal models. The output of the XO is driven to the digital domain via a digital buffer stage with supply
voltage of 1.2V.
Table 7-5.
RTC XO Interface
Pin name
Function
Register default
Digital Control Pins
Pierce_res_ctrl
Control feedback resistance value:
0 = 20MΩ Feedback resistance
1 = 30MΩ Feedback resistance
0X4000F404<15>=’1’
Pierce_cap_ctrl<3:0>
Control the internal tuning capacitors with step of 700fF:
0000=700fF
1111=11.2pF
Refer to crystal datasheet to check for optimum tuning cap
value
0X4000F404<23:20>=”1000”
Pierce_gm_ctrl<3:0>
Controls the Gm stage gain for different crystal mode:
0011= for crystal with shunt cap of 1.2pF
1000= for crystal with shunt cap >3pF
0X4000F404<19:16>=”1000”
Supply Pins
VDD_XO
7.3.3
1.2V
RTC Characterization with Gm Code Variation at Supply 1.2V and Temp. = 25°C
This section shows the RTC total drawn current and the XO accuracy versus different tuning capacitors and
different GM codes, at supply voltage of 1.2V and temp. = 25°C.
Figure 7-4.
RTC Drawn Current vs. Tuning Caps at 25°C
600
Current in nA
500
400
gm code=1
gm code=2
300
gm code=4
gm code=8
200
gm code=12
100
gm code=16
0
0
20
5
10
Tuning Caps in pF
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15
20
Figure 7-5.
RTC Oscillation Frequency Deviation vs. Tuning Caps at 25°C
450
400
ppm
350
300
gm code=1
250
gm code=2
200
gm code=4
150
gm code=8
100
gm code=12
50
gm code=16
0
0
2
4
6
8
10
12
14
16
18
Tuning Caps
RTC Characterization with Supply Variation and Temp. = 25°C
Figure 7-6.
RTC Drawn Current vs. Supply Variation
1400
1200
1000
Current in nA
7.3.4
gm code=0 &
Tuning Cap=8pF
800
gm code=0 &
Tuning Cap=0pF
600
400
gm code=16 &
Tuning Cap=16pF
200
gm code=16 &
Tuning Cap =0pF
0
0.9
1
1.1
1.2
1.3
1.4
1.5
Supply voltage
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Figure 7-7.
RTC Frequency Deviation vs. Supply Voltage
400
350
ppm
300
250
gm code=0 & Tuning
Cap=8pF
200
gm code=0 & Tuning
Cap=0pF
150
gm code=16 & Tuning
Cap=16pF
100
gm code=16 & Tuning Cap=0
50
0
0.9
1
1.1
1.2
1.3
1.4
1.5
Supply Voltage
7.4
2MHz and 26MHz Integrated RC Oscillators
The 2MHz integrated RC Oscillator circuit without calibration has a frequency variation of 50% over process,
temperature, and voltage variation. The ~31.25kHz clock is derived from the 2MHz clock by dividing by 64 and
provides for lowest sleep power mode with a real-time clock running. As described above, calibration over process,
temperature, and voltage are required to maintain the accuracy of this clock.
Figure 7-8.
22
32kHz RC Oscillator PPM Variation vs. Calibration Time at Room Temperature
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Figure 7-9.
32kHz RC Oscillator Frequency Variation over Temperature
The 26MHz integrated RC Oscillator circuit has a frequency variation of 50% over process, temperature, and
voltage variation.
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8
CPU and Memory Subsystem
8.1
ARM Subsystem
ATBTLC1000 has an ARM Cortex-M0 32-bit processor. It is responsible for controlling the BLE Subsystem and
handling all application features.
The Cortex-M0 Microcontroller consists of a full 32-bit processor capable of addressing 4GB of memory. It has a
RISC-like load/store instruction set and internal 3-stage Pipeline Von Neumann architecture.
The Cortex-M0 processor provides a single system-level interface using AMBA technology to provide high speed,
low latency memory accesses.
The Cortex-M0 processor implements a complete hardware debug solution, with four hardware breakpoint and two
watch point options. This provides high system visibility of the processor, memory, and peripherals through a 2-pin
Serial Wire Debug (SWD) port that is ideal for microcontrollers and other small package devices.
Figure 8-1.
ATBTLC1000 ARM Cortex-M0 Subsystem
PD1
Timer
DualTimer
AHB
Slave
AHB
Master
Watch Dog
Timer x2
SPI x2
Ahb_to_sram
BLE
Retention
Ahb_to_rom
ROM
Ahb_to_sram
IDRAM1
Ahb_to_sram
IDRAM2
GPIO Ctrl x3
System Level AHB Slave
System Regs
Security Cores
I2C x2
Nested Vector
IRQ Ctrl
Control Registers
EFUSE Registers
LP Clock Calibration
ARM APB
DMA Controller
UART x2
System Level
AHB Master
SPI Flash Ctrl
LP
CORTEX
M0
AON Sleep Timer
AON Power
Sequencer
8.1.1
Features
The processor features and benefits are:
24

Tight integration with the system peripherals to reduce area and development costs

Thumb instruction set combines high code density with 32-bit performance

Integrated sleep modes using a Wakeup Interrupt Controller for low power consumption

Deterministic, high-performance interrupt handling via Nested Vector Interrupt Controller for time-critical
applications

Serial Wire Debug reduces the number of pins required for debugging

DMA engine for Peripheral-to-Memory, Memory-to-Memory, and Memory-to-Peripheral operation
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8.1.2
Module Descriptions
8.1.2.1 Timer
The 32-bit timer block allows the CPU to generate a time tick at a programmed interval. This feature can be used
for a wide variety of functions such as counting, interrupt generation, and time tracking.
8.1.2.2 Dual Timer
The APB dual-input timer module is an APB slave module consisting of two programmable 32-bit down-counters
that can generate interrupts when they expire. The timer can be used in a Free-running, Periodic, or One-shot
mode.
8.1.2.3 Watchdog
The two watchdog blocks allow the CPU to be interrupted if it has not interacted with the watchdog timer before it
expires. In addition, this interrupt will be an output of the core so that it can be used to reset the CPU in the event
that a direct interrupt to the CPU is not useful. This will allow the CPU to get back to a known state in the event a
program is no longer executing as expected. The watchdog module applies a reset to a system in the event of a
software failure, providing a way to recover from software crashes.
8.1.2.4 Wake-up Timer
This timer is a 32-bit count-down timer that operates on the 32kHz sleep clock. It can be used as a general
purpose timer for the ARM or as a wakeup source for the chip. It has the ability to be a onetime programmable
timer, as it will generate an interrupt/wakeup on expiration and stop operation. It also has the ability to be
programmed in an auto reload fashion where it will generate an interrupt/wakeup and then proceed to start another
count down sequence.
8.1.2.5 SPI Controller
See Section 10.3.
8.1.2.6 I2C Controller
See Section 10.2.
8.1.2.7 SPI-Flash Controller
The AHB SPI-Flash Controller is used to access an external SPI Flash device to access various instruction/data
code needed for storing application code, code patches, and OTA images. Supports several SPI modes including
0, 1, 2, and 3. See Section 10.4.
8.1.2.8 UART
See Section 10.5.
8.1.2.9 DMA Controller
Direct Memory Access (DMA) allows certain hardware subsystems to access main system memory independently
of the Cortex-M0 Processor.
The DMA features and benefits are:

Supports any address alignment

Supports any buffer size alignment

Peripheral flow control, including peripheral block transfer

The following modes are supported:
–
Peripheral to peripheral transfer
–
Memory to memory
–
Memory to peripheral
–
Peripheral to memory
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–
Register to memory

Interrupts for both TX done and RX done in memory and peripheral mode

Scheduled transfers

Endianness byte swapping

Watchdog timer

4-channel operation

32-bit data width

AHB MUX (on read and write buses)

Command lists support

Usage of tokens
8.1.2.10 Nested Vector Interrupt Controller (NVIC)
External interrupt signals connect to the NVIC, and the NVIC prioritizes the interrupts. Software can set the priority
of each interrupt. The NVIC and the Cortex-M0 processor core are closely coupled, providing low latency interrupt
processing and efficient processing of late arriving interrupts.
All NVIC registers are accessible via word transfers and are little-endian. Any attempt to read or write a half-word
or byte individually is unpredictable.
The NVIC allows for the CPU to be able to individually enable, disable each interrupt source, and hold each
interrupt until it has been serviced and cleared by the CPU.
Table 8-1.
NVIC Register Summary
Name
Description
ISER
Interrupt Set-Enable Register
ICER
Interrupt Clear-Enable Register
ISPR
Interrupt Set-Pending Register
ICPR
Interrupt Clear-Pending Register
IPR0-IPR7
Interrupt Priority Registers
For a description of each register, see the Cortex-M0 documentation from ARM.
8.1.2.11 GPIO Controller
The AHB GPIO is a general-purpose I/O interface unit allowing the CPU to independently control all input or output
signals on ATBTLC1000. These can be used for a wide variety of functions pertaining to the application.
The AHB GPIO provides a 16-bit I/O interface with the following features:
26

Programmable interrupt generation capability

Programmable masking support

Thread safe operation by providing separate set and clear addresses for control registers

Inputs are sampled using a double flip-flop to avoid meta-stability issues
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8.2
Memory Subsystem
The M0 core uses a 128kB instruction/boot ROM along with a 128kB shared instruction and data RAM.
8.2.1
BLE Retention Memory
The BLE functionality requires 8KB (or more depending on the application) state, instruction, and data to be
retained in memory when the processor either goes into Sleep Mode or Power Off Mode. The RAM is separated
into specific power domains to allow tradeoff in power consumption with retention memory size.
Non-volatile Memory
ATBTLC1000 has 768 bits of non-volatile eFuse memory that can be read by the CPU after device reset. This nonvolatile one-time-programmable memory can be used to store customer-specific parameters, such as BLE
address, XO calibration information, TX power, crystal frequency offset, as well as other software-specific
configuration parameters. The eFuse is partitioned into six 128-bit banks. The bit map of the first bank is shown in
Figure 8-2. The purpose of the first 80 bits in bank 0 is fixed, and the remaining bits are general-purpose software
dependent bits, or reserved for future use. Since each bank and each bit can be programmed independently, this
allows for several updates of the device parameters following the initial programming, e.g. updating BLE address
(this can be done by invalidating the last programmed bank and programming a new bank). Refer to the
ATBTLC1000 Programming Guide for the eFuse programming instructions.
Figure 8-2.
ATBTLC1000 eFuse Bit Map
128 Bits
Bank 0
Bank 1
Application
Specific
Configuration
Bank 2
Bank 3
Bank 4
Bank 5
F
BT ADDR
8
3
48
XO
Calibration
3
Reserved
1
HW
Config
1
BT ADDR
Used
Reserved
8.3
Tx Power
Calibration
HW Config
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9
Bluetooth Low Energy (BLE) Subsystem
The BLE subsystem implements all the critical real-time functions required for full compliance with Specification of
the Bluetooth System, v4.1, Bluetooth SIG.
It consists of a Bluetooth 4.1 baseband controller (core), radio transceiver and the Atmel Bluetooth Smart Stack,
the BLE Software Platform.
9.1
BLE Core
The baseband controller consists of modem and Medium Access Controller (MAC) and it encodes and decodes
HCI packets, constructs baseband data packages, schedules frames, and manages and monitors connection
status, slot usage, data flow, routing, segmentation, and buffer control.
The core performs Link Control Layer management supporting the main BLE states, including advertising and
connection.
9.1.1
9.2
Features

Broadcaster, Central, Observer, Peripheral

Simultaneous Master and Slave operation, connect up to eight slaves

Frequency Hopping

Advertising/Data/Control packet types

Encryption (AES-128, SHA-256)

Bit stream processing (CRC, whitening)

Operating clock 52MHz
BLE Radio
The radio consists of a fully integrated transceiver, including Low Noise Amplifier, Receive (RX) down converter,
and analog baseband processing as well as Phase Locked Loop (PLL), Transmit (TX) Power Amplifier, and
Transmit/Receive switch. At the RF front end, no external RF components on the PCB are required other than the
antenna and a matching component.
The RX sensitivity and TX output power of the radio together with the 4.1 PHY core provide a 100dB RF link
budget for superior range and link reliability.
9.2.1
Receiver Performance
Table 9-1.
ATBTLC1000 BLE Receiver Performance
Parameter
Frequency
Min.
Typ.
2,402
Sensitivity with external 1.2V
-96
Sensitivity with on-chip DC/DC
-95
Maximum receive signal level
+5
CCI
ACI (N±1)
Max.
Unit
2,480
MHz
dBm
12.5
0
N+2 Blocker (Image)
-22
N-2 Blocker
-38
N+3 Blocker (Adj. Image)
-35
N-3 Blocker
-43
dB
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Parameter
Min.
Typ.
N±4 or greater
-45
Intermod (N+3, N+6)
-32
OOB (2GHz<f<2.399GHz)
-15
OOB (f<2GHz) or (f>2.4GHz)
-10
1.
Unit
dB
dBm
4.0 (1)
RX peak current draw
Note:
Max.
mA
At -93dBm sensitivity setting. Add 0.2mA at 3.6V for best sensitivity setting.
All measurements performed at 3.6V VBATT and 25°C, with tests following Bluetooth V4.1 standard tests.
There are two gain settings for Sensitivity; high gain (-95dBm) and low gain (-93dBm). Low gain has lower current
consumption.
9.2.2
Transmitter Performance
The transmitter has fine step power control with Pout variable in <3dB steps below 0dBm and in <0.5dB steps
above 0dBm.
Table 9-2.
ATBTLC1000 BLE Transmitter Performance
Parameter
Frequency
Min.
Typ.
2,402
Output power range
-20
0
Maximum output power
3.5
In-band Spurious (N±2)
-45
In-band Spurious (N±3)
-55
Unit
2,480
MHz
3.5
dBm
2nd harmonic Pout
-41
3rd harmonic Pout
-41
4th harmonic Pout
-41
5th
-41
harmonic Pout
Max.
Frequency deviation
±250
kHz
TX peak current draw
3.0 (1)
mA
Note:
1.
At 0dBm TX output power.
All measurements performed at 3.6V VBATT and 25°C, with tests following Bluetooth V4.1 standard tests.
9.3
Atmel Bluetooth SmartConnect Stack
The ATBTLC1000 has a completely integrated Bluetooth Low Energy stack on chip, fully qualified, mature, and
Bluetooth V4.1 compliant.
Customer applications interface with the BLE protocol stack through the Atmel BLE API which supports direct
access to the GAP, SMP, ATT, GATT client / server, and L2CAP service layer protocols in the embedded
firmware.
The stack includes numerous BLE profiles for applications like:

Smart Energy

Consumer Wellness
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
Home Automation

Security

Proximity Detection

Entertainment

Sports and Fitness

Automotive
Together with the Atmel Studio Software Development environment, additional customer profiles can be easily
developed.
The Atmel Bluetooth SmartConnect software development kit is based on Keil and IAR™ compiler tools and
contains numerous application code examples for embedded and hosted modes.
In addition to the protocol stack, drivers for each peripheral hardware block are provided.
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10
External Interfaces
10.1
Overview
ATBTLC1000 external interfaces include: 2xSPI Master/Slave (SPI0 and SPI1), 2xI 2C Master/Slave (I2C0 and
I2C1), 1xI2C Slave-only (I2C2), 2xUART (UART1 and UART2), 1xSPI Flash, 1xSWD, and General Purpose
Input/Output (GPIO) pins. For specific programming instructions, refer to the ATBTLC1000 Programming Guide.
Table 10-1 illustrates the different peripheral functions that are software selectable for each pin. This allows for
maximum flexibility of mapping desired interfaces on GPIO pins. MUX1 option allows for any MEGAMUX option
from Table 10-2 to be assigned to a GPIO.
Table 10-1.
Pin Name
ATBTLC1000 Pin-MUX Matrix of External Interfaces
Pin#
Pull
MUX0
MUX1
MUX2
MUX3
MUX4
MUX5
MUX6
MUX7
LP_GPIO_0
D5
Up
GPIO 0
MEGAMUX 0
SWD CLK
TEST OUT 0
LP_GPIO_1
F7
Up
GPIO 1
MEGAMUX 1
SWD I/O
TEST OUT 1
LP_GPIO_2
G6
Up
GPIO 2
MEGAMUX 2
UART1 RXD
SPI1 SCK
SPI0 SCK
SPI FLASH SCK TEST OUT 2
LP_GPIO_3
H7
Up
GPIO 3
MEGAMUX 3
UART1 TXD
SPI1 MOSI
SPI0 MOSI
SPI FLASH TXD
TEST OUT 3
TEST OUT 8
2
2
LP_GPIO_8
J6
Up
GPIO 8
MEGAMUX 8
I C0 SDA
I C2 SDA
SPI0 SSN
SPI FLASH SSN
LP_GPIO_9
H5
Up
GPIO 9
MEGAMUX 9
I2C0 SCL
I2C2 SCL
SPI0 MISO
SPI FLASH RXD TEST OUT 9
LP_GPIO_10
J4
Up
GPIO 10
MEGAMUX 10
SPI0 SCK
SPI FLASH SCK TEST OUT 10
LP_GPIO_11
F5
Up
GPIO 11
MEGAMUX 11
SPI0 MOSI
SPI FLASH TXD
TEST OUT 11
LP_GPIO_12
G4
Up
GPIO 12
MEGAMUX 12
SPI0 SSN
SPI FLASH SSN
TEST OUT 12
LP_GPIO_13
D3
Up
GPIO 13
MEGAMUX 13
SPI0 MISO
SPI FLASH RXD TEST OUT 13
AO_GPIO_0
B1
Up
GPIO 31
WAKEUP
RTC CLK IN
GPIO_MS1
F3
Up
GPIO 47
32KHZ CLK OUT
Table 10-2 shows the various software selectable MEGAMUX options that correspond to specific peripheral
functionality. Several MEGAMUX options provide an interface to manage Wi-Fi® - BLE coexistence.
Table 10-2.
ATBTLC1000 Software Selectable MEGAMUX Options
MUX_Sel
Function
0
UART1 RXD
1
UART1 TXD
2
UART1 CTS
3
UART1 RTS
4
UART2 RXD
5
UART2 TXD
6
UART2 CTS
7
UART2 RTS
8
I2C0 SDA
9
I2C0 SCL
10
I2C1 SDA
11
I2C1 SCL
Notes
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MUX_Sel
Function
Notes
12
PWM 1
13
PWM 2
14
PWM 3
15
PWM 4
16
LP CLOCK OUT
32kHz clock output (RC Osc. or RTC XO)
17
WLAN TX ACTIVE
Coexistence: Wi-Fi is currently transmitting
18
WLAN RX ACTIVE
Coexistence: Wi-Fi is currently receiving
19
BLE TX ACTIVE
Coexistence: BLE is currently transmitting
20
BLE RX ACTIVE
Coexistence: BLE is currently receiving
21
BLE IN PROCESS
Coexistence Signal
22
BLE MBSY
Coexistence Signal
23
BLE SYNC
Coexistence Signal
24
BLE RXNTX
Coexistence Signal
25
BLE PTI 0
Coexistence: BLE Priority
26
BLE PTI 1
Coexistence: BLE Priority
27
BLE PTI 2
Coexistence: BLE Priority
28
BLE PTI 3
Coexistence: BLE Priority
29
QUAD DEC X IN A
30
QUAD DEC X IN B
31
QUAD DEC Y IN A
32
QUAD DEC Y IN B
33
QUAD DEC Z IN A
34
QUAD DEC Z IN B
An example of peripheral assignment using these MEGAMUX options is as follows:

I2C0 pin-muxed on LP_GPIO_10 and LP_GPIO_11 via MUX1 and MEGAMUX=8 and 9

I2C1 pin-muxed on LP_GPIO_0 and LP_GPIO_1 via MUX1 and MEGAMUX=10 and 11

PWM pin-muxed on LP_GPIO_12 via MUX1 and MEGAMUX=12
Another example is to illustrate the available options for pin LP_GPIO_3, depending on the pin-MUX option
selected:
32

MUX0: the pin will function as bit 3 of the GPIO bus and is controlled by the GPIO controller in the ARM
subsystem

MUX1: any option from the MEGAMUX table can be selected, for example it can be a quad_dec, pwm, or
any of the other functions listed in the MEGAMUX table

MUX2: the pin will function as UART1 TXD; this can be also achieved with the MUX1 option via MEGAMUX,
but the MUX2 option allows a shortcut for the recommended pinout

MUX3: this option is not used and thus defaults to the GPIO option (same as MUX0)

MUX4: the pin will function as SPI1 MOSI (this option is not available through MEGAMUX)
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10.2

MUX5: the pin will function as SPI0 MOSI (this option is not available through MEGAMUX)

MUX6: the pin will function as SPI FLASH SCK (this option is not available through MEGAMUX)

MUX7: the pin will function as bit 3 of the test output bus, giving access to various debug signals
I2C Master/Slave Interface
10.2.1 Description
ATBTLC1000 provides I2C Interface that can be configured as Slave or Master. I2C Interface is a two-wire serial
interface consisting of a serial data line (SDA) and a serial clock line (SCL). ATBTLC1000 I2C supports I2C bus
Version 2.1 - 2000 and can operate in the following speed modes:

Standard mode (100kb/s)

Fast mode (400kb/s)

High-speed mode (3.4Mb/s)
I2C
The
is a synchronous serial interface. The SDA line is a bidirectional signal and changes only while the SCL
line is low, except for STOP, START, and RESTART conditions. The output drivers are open-drain to perform wireAND functions on the bus. The maximum number of devices on the bus is limited by only the maximum
capacitance specification of 400pF. Data is transmitted in byte packages.
For specific information, refer to the Philips Specification entitled “The I2C -Bus Specification, Ver2.1”.
10.2.2 I2C Interface Timing
The I2C Interface timing (common to Slave and Master) is provided in Figure 10-1. The timing parameters for Slave
and Master modes are specified in Table 10-3 and Table 10-4 respectively.
Figure 10-1.
ATBTLC1000 I2C Slave Timing Diagram
tPR
tSUDAT
tHDDAT
tBUF
tSUSTO
SDA
tHL
tLH
tWL
SCL
tHDSTA
tLH
tHL
tWH
tPR
fSCL
Table 10-3.
tPR
tSUSTA
ATBTLC1000 I2C Slave Timing Parameters
Parameter
Symbol
Min.
Max.
Units
SCL Clock Frequency
fSCL
0
400
kHz
SCL Low Pulse Width
tWL
1.3
SCL High Pulse Width
tWH
0.6
SCL, SDA Fall Time
tHL
Remarks
µs
300
ns
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Parameter
SCL, SDA Rise Time
Symbol
Min.
tLH
Max.
Units
Remarks
This is dictated by external components
300
START Setup Time
tSUSTA
0.6
START Hold Time
tHDSTA
0.6
SDA Setup Time
tSUDAT
100
SDA Hold Time
tHDDAT
µs
0
ns
Slave and Master Default
40
STOP Setup time
Master Programming Option
tSUSTO
0.6
Bus Free Time Between STOP and START
tBUF
1.3
Glitch Pulse Reject
tPR
0
µs
Table 10-4.
50
ns
ATBTLC1000 I2C Master Timing Parameters
Parameter
Symbol
Standard
Mode
Min.
Max.
100
Fast Mode
Min.
0
Max.
400
High-speed
Mode
Min.
SCL Clock Frequency
fSCL
0
0
SCL Low Pulse Width
tWL
4.7
1.3
0.16
SCL High Pulse Width
tWH
4
0.6
0.06
Units
Max.
3400
kHz
µs
SCL Fall Time
tHLSCL
300
300
10
40
SDA Fall Time
tHLSDA
300
300
10
80
SCL Rise Time
tLHSCL
1000
300
10
40
SDA Rise Time
tLHSDA
1000
300
10
80
START Setup Time
tSUSTA
4.7
0.6
0.16
START Hold Time
tHDSTA
4
0.6
0.16
SDA Setup Time
tSUDAT
250
100
10
SDA Hold Time
tHDDAT
5
40
0
STOP Setup time
tSUSTO
4
0.6
0.16
Bus Free Time Between STOP and START
tBUF
4.7
1.3
Glitch Pulse Reject
tPR
ns
µs
ns
70
µs
10.3
0
50
ns
SPI Master/Slave Interface
10.3.1 Description
ATBTLC1000 provides a Serial Peripheral Interface (SPI) that can be configured as Master or Slave. The SPI
Interface pins are mapped as shown in Table 10-5. The SPI Interface is a full-duplex slave-synchronous serial
interface. When the SPI is not selected, i.e., when SSN is high, the SPI interface will not interfere with data
transfers between the serial-master and other serial-slave devices. When the serial slave is not selected, its
transmitted data output is buffered, resulting in a high impedance drive onto the serial master receive line. The SPI
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Slave interface responds to a protocol that allows an external host to read or write any register in the chip as well
as initiate DMA transfers. For the details of the SPI protocol and more specific instructions, refer to the
ATBTLC1000 Programming Guide.
Table 10-5.
ATBTLC1000 SPI Interface Pin Mapping
Pin Name
SPI Function
SSN
Active Low Slave Select
SCK
Serial Clock
MOSI
Master Out Slave In (Data)
MISO
Master In Slave Out (Data)
10.3.2 SPI Interface Modes
The SPI Interface supports four standard modes as determined by the Clock Polarity (CPOL) and Clock Phase
(CPHA) settings. These modes are illustrated in Table 10-6 and Figure 10-2. The red lines in Figure 10-2
correspond to Clock Phase = 0 and the blue lines correspond to Clock Phase = 1.
Table 10-6.
Figure 10-2.
ATBTLC1000 SPI Modes
Mode
CPOL
CPHA
0
0
0
1
0
1
2
1
0
3
1
1
ATBTLC1000 SPI Clock Polarity and Clock Phase Timing
CPOL = 0
SCK
CPOL = 1
SSN
CPHA = 0
RXD/TXD
(MOSI/MISO)
CPHA = 1
z
1
z
2
1
3
2
4
3
5
4
6
5
7
6
8
7
z
8
z
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10.3.3 SPI Slave Timing
The SPI Slave timing is provided in Figure 10-3 and Table 10-7.
Figure 10-3.
ATBTLC1000 SPI Slave Timing Diagram
Table 10-7.
ATBTLC1000 SPI Slave Timing Parameters
Parameter
Symbol
Min.
Max.
Units
2
MHz
Clock Input Frequency
fSCK
Clock Low Pulse Width
tWL
240
Clock High Pulse Width
tWH
240
Clock Rise Time
tLH
10
Clock Fall Time
tHL
10
Input Setup Time
tISU
5
Input Hold Time
tIHD
5
Output Delay
tODLY
0
Slave Select Setup Time
tSUSSN
5
Slave Select Hold Time
tHDSSN
5
ns
ns
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20
10.3.4 SPI Master Timing
The SPI Master Timing is provided in Figure 10-4 and Table 10-8.
Figure 10-4.
ATBTLC1000 SPI Master Timing Diagram
fSCK
tLH
tWH
tWL
SCK
tHL
SSN,
TXD
tODLY
tISU
tIHD
RXD
Table 10-8.
ATBTLC1000 SPI Master Timing Parameters
Parameter
Min.
Max.
Units
4
MHz
Clock Output Frequency
fSCK
Clock Low Pulse Width
tWL
120
Clock High Pulse Width
tWH
120
Clock Rise Time
tLH
5
Clock Fall Time
tHL
5
Input Setup Time
tISU
5
Input Hold Time
tIHD
5
tODLY
0
Output Delay
10.4
Symbol
ns
5
SPI Flash Master Interface
10.4.1 Description
ATBTLC1000 provides an SPI Master interface for accessing external Flash memory. The TXD pin is the same as
the Master Output, Slave Input (MOSI), and the RXD pin is the same as the Master Input, Slave Output (MISO).
The SPI Master interface supports all four standard modes of clock polarity and clock phase shown in Table 10-6.
External SPI Flash memory is accessed by a processor programming commands to the SPI Master interface,
which in turn initiates an SPI master access to the Flash. For more specific instructions. Refer to ATBTLC1000
Programming Guide.
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10.4.2 SPI Master Timing
The SPI Master Timing is provided in Figure 10-5 and Table 10-9.
Figure 10-5.
ATBTLC1000 SPI Master Timing Diagram
fSCK
tLH
tWH
tWL
SCK
tHL
SSN,
TXD
tODLY
tISU
tIHD
RXD
Table 10-9.
ATBTLC1000 SPI Master Timing Parameters
Parameter
Min.
Max.
Units
13
MHz
Clock Output Frequency
fSCK
Clock Low Pulse Width
tWL
33
Clock High Pulse Width
tWH
33
Clock Rise Time
tLH
5
Clock Fall Time
tHL
5
Input Setup Time
tISU
5
Input Hold Time
tIHD
5
tODLY
0
Output Delay
10.5
Symbol
ns
5
UART Interface
ATBTLC1000 provides Universal Asynchronous Receiver/Transmitter (UART) interfaces for serial communication.
The Bluetooth subsystem has two UART interfaces: a 4-pin interface for control and data transfer. The UART
interfaces are compatible with the RS-232 standard, where ATBTLC1000 operates as Data Terminal Equipment
(DTE). The 4-pin UART has two pins for data (TX and RX) and two pins for flow control/handshaking: Request To
Send (RTS) and Clear To Send (CTS). The RTS and CTS are used for hardware flow control; they MUST be
connected to the host MCU UART and enabled for the UART interface to be functional. The pins associated
with each the UART interfaces can be enabled on several alternative pins by programming their corresponding pinMUX control registers (see Table 10-1 and Table 10-2 for available options).
The UART features programmable baud rate generation with fractional clock division, which allows transmission
and reception at a wide variety of standard and non-standard baud rates. The Bluetooth UART input clock is
selectable between 26MHz, 13MHz, 6.5MHz, and 3.25MHz. The clock divider value is programmable as 13 integer
bits and three fractional bits (with 8.0 being the smallest recommended value for normal operation). This results in
the maximum supported baud rate of 26MHz/8.0 = 3.25MBd.
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The UART can be configured for seven or eight bit operation, with or without parity, with four different parity types
(odd, even, mark, or space), and with one or two stop bits. It also has RX and TX FIFOs, which ensure reliable
high speed reception and low software overhead transmission. FIFO size is 4x8 for both RX and TX direction. The
UART also has status registers showing the number of received characters available in the FIFO and various error
conditions, as well the ability to generate interrupts based on these status bits.
An example of UART receiving or transmitting a single packet is shown in Figure 10-6. This example shows 7-bit
data (0x45), odd parity, and two stop bits.
Refer to the ATBTLC1000 Programming Guide for more specific instructions.
Figure 10-6.
10.6
Example of UART RX or TX Packet
GPIOs
12 General Purpose Input/Output (GPIO) pins total, labeled LP_GPIO, GPIO_MS, and AO_GPIO, are available to
allow for application specific functions. Each GPIO pin can be programmed as an input (the value of the pin can be
read by the host or internal processor) or as an output (the output values can be programmed by the host or
internal processor).
LP_GPIO are digital interface pins, GPIO_MS is a mixed signal/analog interface pin and AO_GPIO is an always-on
digital interface pin that can detect interrupt signals while in deep sleep mode for wake up purposes.
The LP_GPIO have interrupt capability but only when in active/standby mode. In sleep mode, they are turned off to
save power consumption.
10.7
Analog to Digital Converter (ADC)
10.7.1 Overview
The ATBTLC1000 has an integrated Successive Approximation Register (SAR) ADC with 11-bit resolution and
variable conversion speed up 1MS/s. The key building blocks are the capacitive DAC, comparator, and
synchronous SAR engine as shown in Figure 10-7.
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Figure 10-7.
BTLC1000 SAR ADC Block Diagram
The ADC reference voltage can be either generated internally or set externally via one of the two available Mixed
Signal GPIO pins on the ATBTLC1000.
There are two modes of operation:
A.
High resolution (11-bit): Set the reference voltage to half the supply voltage or below. In this condition the
input signal dynamic range is equal to twice the reference voltage (ENOB=10bit).
B.
Medium Resolution (10-bit): Set the reference voltage to any value below supply voltage (up to supply
voltage - 300mV) and in this condition the input dynamic range is from zero to reference voltage (ENOB = 9
bit).
There are four input channels that are time multiplexed to the input of the SAR ADC. However on the
ATBTLC1000, only one channel input is accessible from the outside, through the Mixed Signal GPIO pin.
In power saving mode, the internal reference voltage is completely off and the reference voltage is set externally.
The ADC characteristics are summarized in Table 10-10.
Table 10-10.
SAR ADC Characteristics
Conversion rate
1ks → 1MS
Selectable Resolution
10 → 11bit
Power consumption
13.5µA (at 100KS/s) (1)
Note:
1.
With external reference.
10.7.2 Timing
The ADC timing is shown in Figure 10-8. The input signal is sampled twice, in the first sampling cycle the input
range is defined either to be above reference voltage or below it and in the 2 nd sampling instant the ADC start its
normal operation.
The ADC takes two sampling instants and N-1 conversion cycle (N=ADC resolution) and one cycle to sample the
data out. So for 11-bit resolution it takes 13 clock cycles to do one Sample conversion.
The Input clock equals N+2 the sampling clock frequency (N is the ADC resolution).
CONV signal : Gives indication about end of conversion.
40
SAMPL
: The input signal is sampled when this signal is high.
RST ENG
: When High SAR Engine is in reset mode (SAR engine output is set to mid-scale).
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Figure 10-8.
SAR ADC Timing
10.7.3 Performance
Table 10-11.
Static Performance of SAR ADC
Parameter
Condition
Min.
Input voltage range
Typ.
0
Resolution
11
Sample rate
100
Max.
Unit
VBAT
V
bits
1000
KSPS
Input offset
Internal VREF
-10
+10
mV
Gain error
Internal VREF
-4
+4
%
DNL
100KSPS. Internal VREF=1.6V. Same result for
external VREF.
-0.75
+1.75
INL
100KSPS. Internal VREF=1.6V. Same result for
external VREF.
-2
+2.5
THD
1kHz sine input at 100KSPS
73
SINAD
1kHz sine input at 100KSPS
62.5
SFDR
1kHz sine input at 100KSPS
73.7
LSB
Conversion time
dB
13
Using external VREF, at 100KSPS
13.5
Using internal VREF, at 100KSPS
25.0
Using external VREF, at 1MSPS
94
Using internal VREF, at 1MSPS
150
Using internal VREF, during VBAT monitoring
100
Using internal VREF, during temperature monitoring
50
cycles
Current consumption
µA
Mean value using VBAT = 2.5V
1.026*
Standard deviation across parts
10.5
V
Internal reference voltage
Without calibration
-55
+55
With offset and gain calibration
-17
+17
Without calibration
-9
+9
With offset calibration
-4
+4
mV
VBAT Sensor Accuracy
Temperature Sensor Accuracy
Note:
1.
ºC
Effective VREF is 2xInternal Reference Voltage.
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 = 250   = 3.0 ,  ℎ 
Figure 10-9.
INL of SAR ADC
INL 100KS/s 3V internal reference
3
INL (LSB)
2
1
0
-1
0
500
1000
1500
2000
-2
-3
Output Code
Figure 10-10. DNL of SAR ADC
DNL 100KS/s 3V internal reference
2
INL (LSB)
1.5
1
0.5
0
-0.5 0
500
1000
-1
-1.5
42
Output Code
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1500
2000
Figure 10-11. Sensor ADC Dynamic Measurement with Sinusoidal Input
Notes:
1.
2.
25ºC, 3.6V VBAT, and 100kS/s
Input signal: 1kHz sine wave, 3Vp-p amplitude
SNDR = 62.5dB
SFDR = 73.7dB
THD = 73.0dB
Figure 10-12. Sensor ADC Dynamic Performance Summary at 100KSPS
Dynamic performance summary
74
SNR
SNDR
SFDR
THD
72
70
68
dB
66
64
62
60
58
56
54
0
0.5
1
1.5
2
input signal frequency in Hz
2.5
3
4
x 10
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10.8
Software Programmable Timer and Pulse Width Modulator
ATBTLC1000 contains four individually configurable pulse width modulator (PWM) blocks to provide external
control voltages. The base frequency of the PWM block (fPWM_base) is derived from the XO clock (26MHz) or the
RC oscillator followed by a programmable divider.
The frequency of each PWM pulse (fPWM) is programmable in steps according to the following relationship:
_
 =
 = 0,1,2, … , 8
64 ∗ 2
The duty cycle of each PWM signal is configurable with 10-bit resolution (minimum duty cycle is 1/1024 and
maximum is 1023/1024).
 can be selected to have different values according to Table 10-12. Minimum and maximum frequencies
supported for each clock selection is listed in the table as well.
Table 10-12.
fPWM Range for Different fPWM Base Frequencies

10.9
fPWM max.
fPWM min.
26MHz
406.25kHz
6.347kHz
13MHz
203.125kHz
3.173kHz
6.5MHz
101.562kHz
1.586kHz
3.25MHz
50.781kHz
793.25Hz
Clock Output
ATBTLC1000 has an ability to output a clock. The clock can be output to any GPIO pin via the test MUX. Note that
this feature requires that the ARM and BLE power domains stay on. If BLE is not used, the clocks to the BLE core
are gated off, resulting in small leakage. The following two methods can be used to output a clock.
10.9.1 Variable Frequency Clock Output Using Fractional Divider
ATBTLC1000 can output the variable frequency ADC clock using a fractional divider off the 26MHz oscillator. This
clock needs to be enabled using bit 10 of the lpmcu_clock_enables_1 register. The clock frequency can be
controlled by the divider ratio using the sens_adc_clk_ctrl register (12-bits integer part, 8-bit fractional part). The
division ratio can vary from 2 to 4096 delivering output frequency between 6.35kHz to 13MHz. This is a digital
divider with pulse swallowing implementation so the clock edges may not be at exact intervals for the fractional
ratios. However, it is exact for integer division ratios.
10.9.2 Fixed Frequency Clock Output
ATBTLC1000 can output the following fixed-frequency clocks:

52MHz derived from XO

26MHz derived from XO

2MHz derived from the 2MHz RC Osc.

31.25kHz derived from the 2MHz RC Osc.

32.768kHz derived from the RTC XO

26MHz derived from 26MHz RC Osc.

6.5MHz derived from XO

3.25MHz derived from 26MHz RC Osc.
For clocks 26MHz and above ensure that external pad load on the board is minimized to get a clean waveform.
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10.10 Three-axis Quadrature Decoder
ATBTLC1000 has a three-axis Quadrature decoder (X, Y, and Z) that can determine the direction and speed of
movement on three axes, requiring in total six GPIO pins to interface with the sensors. The sensors are expected
to provide pulse trains as inputs to the quadrature decoder.
Each axis channel input will have two pulses with ±90 degrees phase shift depending on the direction of
movement. The decoder counts the edges of the two waveforms to determine the speed and uses the phase
relationship between the two inputs to determine the direction of motion.
The decoder is configured to interrupt ARM based on independent thresholds for each direction. Each quadrature
clock counter (X, Y, and Z) is an unsigned 16-bit counter and the system clock uses a programmable sampling
clock ranging from 26MHz, 13, 6.5, to 3.25MHz.
If wakeup is desired from threshold detection on an axis input, the always-on GPIO needs to be used (only one
GPIO on ATBTLC1000).
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ANTENNA
C4
1.2pF
R3
DNI
3.6nH
Cry stal Load Capactince
should be specif ied
f or 8pF.
C8
C7
5.6pF
Y1
26MHz
C5
DNI
C6
8.2pF
Y2
32.768KHz
5.6pF
An external
32.768KHz clock may
be used instead of
a cry stal. Signal
must be 1.2V max.
L4
0
Antenna Matching
Network. Place
right next to antenna
R2
DNI
R1
Test Point
Place C10 as close
as possible to pin E6.
Place C9 as close
as possible to pin C6.
Place C15 as close
as possible to pin A6.
A4
B5
C2
D1
B7
C4
BTLC1000 CSP
XO_P
XO_N
RTCP
RTCN
RFIO
TPP
U1
C9 0.1uF
VDDIO
C11 0.1uF
FB1
BLM03AG121SN1
2
C15 0.1uF
C6
A6
E6
VDDRF
VDD_VCO/SX
VDD_AMS
C12
G2
1
A2
VDDIO
RFGND
VSS
GNDBUCK
D7
E4
H3
10uF
4V
1.0uF
C13
0.01uF
B3
B1
VDDIO_SW
AO_GPIO_0
FB2
2.2uF BLM03AG121SN1
2
6.3V 1
VBat_buck
C20
F1
C1
CHIP_EN
GPIO_MS1
LP_GPIO_13
LP_GPIO_12
LP_GPIO_11
LP_GPIO_10
LP_GPIO_9
LP_GPIO_8
LP_GPIO_3
LP_GPIO_2
LP_GPIO_1
LP_GPIO_0
VSW
SWDIO
SWCLK
D3
G4
F5
J4
H5
J6
H7
G6
F7
D5
E2
F3
L5
J2
4.7uH
4.7uF
4V
C14
If Wake f unction is
not used, connect
AO_GPIO_0 to ground
Wake
Chip_En
UART_RTS
UART_CTS
UART_TxD
UART_RxD
Test Point
Test Point
Test Points or header
f or access to debug pins.
Test Point
9.1nH L6
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LP_LDO_OUT
VBAT
46
H1
0
Reference Design
VDDC_PD4
R4
11
C10 1.0uF
12
Bill of Material (BOM)
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13 Electrical Characteristics
13.1
Absolute Maximum Ratings
Table 13-1.
ATBTLC1000 Absolute Maximum Ratings
Symbol
Min.
Max.
VDDIO
I/O supply voltage
-0.3
5.0
VBATT
Battery supply voltage
-0.3
5.0
VIN (1)
Digital input voltage
-0.3
VDDIO
VAIN (2)
Analog input voltage
-0.3
1.5
VESDHBM (3)
ESD human body model
-1000, -2000
(see notes below)
+1000, +2000
(see notes below)
TA
Storage temperature
-65
150
Notes:
13.2
Characteristics
1.
2.
3.
Unit
V
°C
VIN corresponds to all the digital pins.
VAIN corresponds to all the analog pins.
For VESDHBM, each pin is classified as Class 1, or Class 2, or both:

The Class 1 pins include all the pins (both analog and digital)

The Class 2 pins include all digital pins only

VESDHBM is ±1kV for Class1 pins. VESDHBM is ±2kV for Class2 pins
Recommended Operating Conditions
Table 13-2.
Symbol
ATBTLC1000 Recommended Operating Conditions
Characteristic
Min.
Typ.
Max.
VDDIOL
I/O supply voltage low range
1.62
1.80
2.00
VDDIOM
I/O supply voltage mid-range
2.00
2.50
3.00
VDDIOH
I/O supply voltage high range
3.00
3.30
4.30
VBATT
Battery supply voltage (1)
1.8
3.6
4.3
Operating temperature
-40
Unit
V
Note:
1.
85
°C
VBATT must not be less than VDDIO.
2. When powering up the device, VBATT must be greater or equal to 1.9V to ensure BOD does not
trigger. BOD threshold is typically 1.8V and the device will be held in reset if VBATT is near this
threshold on startup. After startup, BOD can be disabled and the device can operated down to 1.8V.
48
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WLCSP SoC [DATASHEET]
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13.3
DC Characteristics
Table 13-3 provides the DC characteristics for the ATBTLC1000 digital pads.
Table 13-3.
ATBTLC1000 DC Electrical Characteristics
VDDIO
condition
Characteristic
Min.
Typ.
Max.
Input low voltage VIL
-0.30
0.60
Input high voltage VIH
VDDIO-0.60
VDDIO+0.30
Unit
VDDIOL
Output low voltage VOL
0.45
Output high voltage VOH
VDDIO-0.50
Input low voltage VIL
-0.30
0.63
Input high voltage VIH
VDDIO-0.60
VDDIO+0.30
VDDIOM
V
Output low voltage VOL
0.45
Output high voltage VOH
VDDIO-0.50
Input low voltage VIL
-0.30
0.65
Input high voltage VIH
VDDIO-0.60
VDDIO+0.30 (up to 3.60)
VDDIOH
Output low voltage VOL
0.45
Output high voltage VOH
VDDIO-0.50
Output loading
20
Digital input load
6
All
pF
VDDIOL
Pad drive strength (regular pads
VDDIOM
(1))
1.7
2.5
Pad drive strength (regular pads)
3.4
6.6
VDDIOH
Pad drive strength (regular pads)
10.5
14
VDDIOL
Pad drive strength (high-drive pads (1))
3.4
5.0
VDDIOM
Pad drive strength (high-drive pads)
6.8
13.2
VDDIOH
Pad drive strength (high-drive pads)
21
28
Note:
1.
mA
The following are high-drive pads: GPIO_8, GPIO_9; all other pads are regular.
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9
14 Errata
Issue:
The measured current for the cases listed Table 6-3 will be higher than what is reported in the
figure.
This is because the Power number values in the SDK4.0 release have not been fully optimized to
their final values.
A small sample measurement has been performed on 10 samples and they show the following
results:
Measurement condition:
-
1-sec adverting interval
37 byte advertising payload
Connectable beacon
Advertising on three channels (37, 38, 39)
Vbatt and VDDIO are set to 3.3V
SAM L21 has a measurement floor of 80nA, which was compensated in the reported numbers
(this number varies from board to board and needs to be compensated).
The Average advertising current: 11.3µA
The Average sleep current between beacons: 1.17µA
The average current for the 10 boards was (including 80nA floor):
Sample #
Average Current (µA)
Work around:
50
1
11.55
2
11.45
3
11.45
4
11.7
Will be resolved in a SDK update.
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0
5
11.4
6
11.25
7
10.95
8
11.2
9
11.6
10
11.4
15 Document Revision History
Doc Rev.
Date
42493D
02/2016
Some minor corrections in text and template.
01/2016
1. Updated power values and added Bluetooth Certification ID’s in feature list.
2. Added UART flow control to LP_GPIO Pins in Table 4-1.
3. Revised values in Ex Inductor Rng in Table 6-1.
4. Removed 1µH Row and updated cap and ripple values in Table 6-2.
5. Updated BLE on Transmit/BLE on Receive values in Table 6-3.
6. Updated text in describing BOD handling in Section 6.5.
7. Removed BGR block from diagram in Figure 6-5 and reference in Figure 6-6.
8. Added Table 6-5 for Brownout Thresholds and POR time.
9. Updated oscillator variations to 50% in Sections, 7.1, and 7.4.
10. Updated Table 9-2 TX peak current values.
11. Updated Reference Design info. In Sections 11 & 12.
12. Added note 2, in Table 13-2.
13. Revised Sensitivity values in the Features, and Section 9.2.1.
14. Updated Figure 7-2 and Figure 7-3.
15. Revised Power sequence Figure 6-4 and Table 6-4.
16. Updated Reference Schematic and BOM in Sections 11 and 12.
17. Added Errata area in Section 14.
42493C
42493B
09/16/2015
42493A
08/2015
Comments
1. Updated current numbers in the feature list.
2. Updated current numbers and added comments in Table 6-3.
3. Updated advertising current chart in Figure 6-3.
4. Updated capacitance value in Section 7.2.
5. Updated voltage value in Table 7-3.
6. Updated capacitance value and text in Section 7.3.1.
7. Added 32kHz RC Oscillator performance charts in Section 7.4.
8. Updated Receiver performance numbers and comments in Table 9-1.
9. Updated Transmitter performance numbers and comments in Table 9-2.
10. Updated ADC power consumption and added comment in Table 10-10.
11. Replaced the whole ADC performance Table 10-11.
12. Replaced ADC performance charts: Figure 10-9 and Figure 10-10.
13. Added new ADC performance charts: Figure 10-11 and Figure 10-12.
14. BTLC1000 corrected to ATBTLC1000.
Initial document release. Based on 42409B, changed package type to WLCSP.
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1
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