ATA6670 - Complete

ATA6670
Dual LIN Transceiver
DATASHEET
Features
● Operating range from 5V to 27V
● Baud rate up to 20Kbaud
● LIN physical layer according to LIN specification 2.0, 2.1 and SAEJ2602-2
● Fully compatible with 3.3V and 5V devices
● TXD dominant timeout timer
● Normal and sleep mode
● Wake-up capability via LIN bus (90µs dominant)
● Very low standby current during sleep mode (10µA)
● Bus pin is overtemperature and short-circuit protected versus GND and battery
● LIN input current < 2µA if VBAT Is disconnected
● Overtemperature protection
● High EMC level
● Interference and damage protection according to ISO/CD 7637
● Fulfills the OEM hardware requirements for LIN in automotive applications rev. 1.1
● Transceiver 2: additional INH high side switch output and high voltage WAKE input
● Qualified according to AEC-Q100
● Package: DFN14 with wettable flanks (Moisture Sensitivity Level 1)
Description
The Atmel® ATA6670 is a fully integrated dual-LIN transceiver complying with the LIN
specification 2.0, 2.1, and SAEJ2602-2. There are two completely independent and separated LIN transceivers integrated in one package (only the GND pins GND1 and GND2 are
internally connected). Each of them interfaces with the LIN protocol handler and the physical layer.
The two LIN transceivers are nearly identical, the only difference is an additional WAKE
input and an INH output at transceiver 2.
The device is designed to handle the low-speed data communication in vehicles, for example, in convenience electronics. Improved slope control at the LIN driver ensures secure
data communication up to 20Kbaud. Sleep mode guarantees minimal current consumption
for each transceiver even in the case of a floating bus line or a short-circuit on the LIN bus
to GND. The Atmel ATA6670 features advanced EMI and ESD performance.
9204H-AUTO-10/14
Figure 1.
Block Diagram
14
VS1
Transceiver 1
1
Receiver
RXD1
+
13
LIN1
Filter
Wake up bus
timer
Short circuit
and overtemperature
protection
3
TXD1
TXD
Time-Out
Timer
Slew rate control
Control unit
12
Sleep mode
GND1
2
EN1
10
VS2
Transceiver 2
Receiver
4
RXD2
+
9
LIN2
Filter
Wake up bus
timer
Short circuit
and overtemperature
protection
7
TXD2
TXD
Time-Out
Timer
Slew rate control
VS
VS
Control unit
6
WAKE2
Wake-up
Timer
5
EN2
2
ATA6670 [DATASHEET]
9204H–AUTO–10/14
8
Sleep mode
GND2
11
INH2
1.
Pin Configuration
Figure 1-1. Pinning DFN14
RXD1
VS1
EN1
LIN1
TXD1
RXD2
GND1
Atmel
ATA6670
EN2
VS2
WAKE2
LIN2
TXD2
Table 1-1.
INH2
GND2
Pin Description
Pin
Symbol
1
RXD1
Function
Receives data output 1 (open drain)
2
EN1
Enables normal mode 1. When the input is open or low, transceiver 1 is in sleep mode.
3
TXD1
Transmits data input 1
4
RXD2
Receives data output 2 (open drain)
5
EN2
6
WAKE2
7
TXD2
Transmits data input 2. Active low output (strong pull-down) after a local wake-up request at
transceiver 2.
8
GND2
Ground 2
Enables normal mode 2. When the input is open or low, transceiver 2 is in sleep mode.
High voltage input for local wake-up request. If not needed, connect directly to VS2
9
LIN2
LIN bus line 2 input/output
10
VS2
Battery supply 2
11
INH2
VS2- related high-side switch output for controlling an external load, such as a voltage divider
12
GND1
Ground 1
13
LIN1
LIN bus line 1 input/output
14
VS1
Battery supply 1
ATA6670 [DATASHEET]
9204H–AUTO–10/14
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2.
Functional Description
The functions described in the following text apply to each LIN transceiver. Therefore, if pin LIN is stated, this applies to each
of the two receivers (LIN1 and LIN2), which work completely independently. The only internal connection is between GND1
and GND2. The functions only available at transceiver 2 are marked accordingly.
2.1
Physical Layer Compatibility
Since the LIN physical layer is independent of higher LIN layers (e.g., the LIN protocol layer), all nodes with a LIN physical
layer according to revision 2.x can be mixed with LIN physical layer nodes, which are based on older versions (i.e., LIN 1.0,
LIN 1.1, LIN 1.2, LIN 1.3) without any restrictions.
2.2
Supply Pin (VS)
Undervoltage detection is implemented to disable transmission if VS falls to a value below 5V in order to avoid false bus
messages. After switching on VS, the corresponding transceiver switches to Fail-safe mode. The supply current for each
transceiver in sleep mode is typically 10µA.
2.3
Ground Pin (GND)
The Atmel® ATA6670 does not affect the LIN bus in case of GND disconnection. It is able to handle a ground shift up to
11.5% of VS.
2.4
Bus Pin (LIN)
A low-side driver with internal current limitation and thermal shutdown and an internal pull-up resistor are implemented as
specified for LIN 2.x. The voltage range is from –27V to +40V. This pin exhibits no reverse current from the LIN bus to VS,
even in case of a GND shift or VBatt disconnection. The LIN receiver thresholds are compatible with the LIN protocol
specification. The fall time (from recessive to dominant) and the rise time (from dominant to recessive) are slope-controlled.
The output has a self-adapting short-circuit limitation; in other words, during current limitation, the current decreases in
proportion to an increase in chip temperature.
Note:
2.5
The internal pull-up resistor is only active in normal and fail-safe mode.
Input/Output Pin (TXD)
In normal mode the TXD pin is the microcontroller interface to control the state of the LIN output. TXD must be at low level in
order to have a low LIN bus. If TXD is high, the LIN output transistor is turned off and the bus is in recessive state. The TXD
pin is compatible with both a 3.3V and 5V supply.
Only for the LIN transceiver 2: The TXD 2 pin is used in Fail-safe mode as an output in order to signal the wake-up source
(see Section 2.14 “Wake- up Source Recognition (Only available at Transceiver 2)” on page 9). The TXD output is current
limited to < 8mA.
2.6
TXD Dominant Time-out Function
The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from being driven permanently in
dominant state. If TXD is forced to low longer than tDOM > 70ms, the LIN pin is switched off (recessive mode). To reset this
mode, switch TXD to high (> 10µs) before switching LIN to dominant again.
2.7
Output Pin (RXD)
This pin reports the state of the LIN bus to the microcontroller. LIN high (recessive) is reported by a high level at RXD, LIN
low (dominant) is reported by a low voltage at RXD. The output is an open drain, therefore it is compatible with a 3.3V or 5V
power supply. The AC characteristics are defined with a pull-up resistor of 5kΩ to 5V and a load capacitor of 20pF. The
output is short current protected. In unpowered mode (VS = 0V) RXD is switched off. For ESD protection a zener diode is
integrated with VZ = 6.1V.
4
ATA6670 [DATASHEET]
9204H–AUTO–10/14
2.8
Enable Input Pin (EN)
This pin controls the operation mode of the LIN transceiver. If EN = 1, the LIN transceiver is in normal mode, with the
transmission path from TXD to LIN and from LIN to RXD both active. At a falling edge on EN, while TXD is already set to
high, the device is switched to Sleep mode and no transmission is possible. In sleep mode, the LIN bus pin is connected to
VS with a weak pull-up current source. The device can transmit only after being woken up. During sleep mode the device is
still supplied from the battery voltage. The supply current is typically 10µA. The pin EN provides a pull-down resistor in order
to force the transceiver into sleep mode in case the pin is disconnected.
2.9
WAKE-up Input Pin (WAKE2, Only Available at Transceiver 2)
This pin is a high-voltage input used to wake up the transceiver 2 from sleep mode. It is usually connected to an external
transistor or a switch to generate a local wake-up. A pull-up current source with typically –10µA is implemented as well as a
debounce timer with a typical debounce time of 35µs.
Even if the WAKE2 pin is pulled to GND, it is possible to switch the transceiver 2 into sleep mode.
If a local wake-up is not needed in the application, pin WAKE2 can be connected directly to pin VS2.
2.10
INH Output Pin (INH2, only available at Transceiver 2)
This pin is used to control an external load or to switch the LIN master pull-up resistor on/off at pin LIN2. The inhibit pin
provides an internal switch towards VS2 which is protected by temperature monitoring. If transceiver 2 is in normal or failsafe mode, the inhibit high-side switch is turned on. When the transceiver 2 is in Sleep mode, the inhibit switch is turned off,
thus disabling the connected external devices.
A wake-up event on LIN2 or at pin WAKE2 puts the transceiver 2 into fail-safe mode and as a result the INH2 switches to the
VS2 level. After a system power-up (VS2 rises from zero), the pin INH2 switches automatically to the VS2 level.
2.11
Operation Modes
1.
Normal mode
This is the normal transmitting and receiving mode. All features are available.
2.
Sleep mode
In this mode the transmission path is disabled and the device is in low power mode. Supply current from VBatt is
typically 10µA. A wake-up signal (either from the LIN bus or the WAKE2 input) is detected and switches the corresponding transceiver to fail-safe mode. If EN then switches to high, Normal mode is activated. Input debounce
timers at pin WAKE2 (tWAKE), LIN (tBUS) and EN (tsleep,tnom) prevent undesirable wake-up events due to automotive
transients or EMI. The internal termination between pin LIN and pin VS is disabled. Only a weak pull-up current
(typical 10µA) between pin LIN and pin VS is present. Sleep mode can be activated independently of the current
level on pin LIN.
3.
Fail-safe mode
At system power-up or after a wake-up event, the transceiver automatically switches to fail-safe mode. When VS2
exceeds 5V, the transceiver 2 switches the INH2 pin to the VS2 level. LIN communication is switched off. The
microcontroller of the application then confirms normal mode by setting the EN pin to high.
ATA6670 [DATASHEET]
9204H–AUTO–10/14
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Figure 2-1. Operating Modes
Power-up
a: Power-up (VS > 3V)
a
b: VS < 5V
c: Bus wake-up event
d: Wake-up from wake switch
(only Transceiver 2)
Fail-Safe Mode
Communication: OFF
RXD: see table of Modes
Transceiver 2: INH2 switch ON if VS2 > 5V
b
b
EN = 1
and not b
c or d
EN = 0
Normal Mode
Communication: ON
Transceiver 2: INH2 switch ON
Table 2-1.
2.12
Go to sleep command
EN = 1
Sleep Mode
Communication: OFF
Transceiver 2: INH2 switch OFF
Local wake-up event
Table of Modes
Operating Mode
Transceiver
RXD
LIN
Fail-safe
Off
High, except after wake-up
Recessive
Normal
On
LIN-depending
TXD-depending
Sleep
Off
High-ohmic
Recessive
Remote Wake-up via Dominant Bus State
A voltage lower than the LIN pre-wake detection VLINL at pin LIN activates the internal LIN receiver and starts the wake-up
detection timer.
A falling edge at pin LIN, followed by a dominant bus level VBUSdom maintained for a certain period of time (> tBUS) and a
rising edge at pin LIN results in a remote wake-up request. The transceiver switches to Fail-safe mode, at transceiver 2 the
INH2 output is activated (switches to VS2) and the internal termination resistor is switched on. The remote wake-up request
is indicated by a low level at pin RXD to interrupt the microcontroller (see Figure 2-2).
Figure 2-2. LIN Wake-up Waveform Diagram
Bus wake-up filtering time
(tBUS)
LIN Bus
RXD
High or floating
Low
Normal
Mode
EN
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ATA6670 [DATASHEET]
9204H–AUTO–10/14
EN High
Node in sleep state
In Sleep mode the device has a very low current consumption even during short-circuits or floating conditions on the bus. A
floating bus can arise if the master pull-up resistor is missing, e.g., it is switched off when the LIN master is in sleep mode or
even if the power supply of the master node is switched off.
In order to minimize the current consumption IVS during voltage levels at the LIN pin below the LIN pre-wake threshold, the
receiver is activated only for a specific time tmon. If tmon elapses while the voltage at the bus is lower than pre-wake detection
low (VLINL) and higher than the LIN-dominant level, the receiver is switched off again and the circuit reverts to sleep mode.
The current consumption is then the result of IVSsleep plus ILINwake. If a dominant state is reached on the bus, no wake-up will
occur. Even if the voltage rises above the pre-wake detection high (VLINH), the IC will stay in sleep mode (see Figure 2-3 on
page 7).
This means the LIN bus must be above the pre-wake detection threshold VLINH for a few microseconds before a new LIN
wake-up is possible.
Figure 2-3. Floating LIN Bus during Sleep Mode
LIN Pre-wake
VLINL
LIN BUS
LIN dominant state
VBUSdom
tmon
IVSfail
IVS
IVSsleep
Mode of
operation
Int. Pull-up
Resistor
RLIN
Sleep Mode
IVSsleep
+ ILINwake
IVSsleep
Wake-up Detection Phase
Sleep Mode
off (disabled)
ATA6670 [DATASHEET]
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If the Atmel® ATA6670 is in sleep mode and the voltage level at the LIN is in dominant state (VLIN < VBUSdom) for a period of
time exceeding tmon (during a short circuit at LIN, for example), the IC switches back to sleep mode. The VS current
consumption then consists of IVSsleep plus ILINWAKE. After a positive edge at pin LIN the IC switches directly to fail-safe mode
(see Figure 2-4).
Figure 2-4. Short-circuit to GND on the LIN Bus During Sleep Mode
LIN Pre-wake
LIN BUS
VLINL
LIN dominant state
VBUSdom
tmon
tmon
IVSfail
IVS
Mode of
operation
Int. Pull-up
Resistor
RLIN
2.13
IVSsleep
Sleep Mode
Wake-up Detection Phase
IVSsleep
+ ILINwake
Sleep Mode
off (disabled)
Fail-Safe Mode
on (enabled)
Local WAKE-up via Pin WAKE2 (Only Available at Transceiver 2)
A falling edge at pin WAKE2 followed by a low level maintained for a certain period of time (> tWAKE) results in a local wakeup request. According to ISO 7637, the wake-up time ensures that no transients create a wake-up. The transceiver 2 then
switches to fail-safe mode. Pin INH2 is activated (switches to VS2) and the internal slave termination resistor is switched on.
The local wake-up request is indicated by a low level at pin RXD for interrupting the microcontroller and by a strong
pull-down at pin TXD (see Figure 2-5 on page 9).
The voltage threshold for a wake-up signal is 3V below the VS2 voltage with an output current of typically –3µA. Even in the
case of a continuos low at pin WAKE2 it is possible to switch the transceiver 2 into sleep mode via a low level at pin EN2.
The transceiver 2 will remain in Sleep mode for an unlimited time. To generate a new wake-up at pin WAKE2, a high signal
for > 6µs is required. A negative edge then restarts the wake-up filtering time.
8
ATA6670 [DATASHEET]
9204H–AUTO–10/14
Figure 2-5. LIN Transceiver 2: Wake-up from Wake-up Switch (WAKE2)
Wake2 Pin
State change
High
INH2
Low or floating
RXD2
High or floating
TXD2
TXD weak pull-down resistor
Low
Low
TXD strong pull-down
Weak
pull-down
Wake filtering time
Node in
operation
tWAKE
EN2
EN High
Node in sleep state
Microcontroller start-up
delay time
2.14
Wake- up Source Recognition (Only available at Transceiver 2)
Transceiver 2 can distinguish between a local wake-up request at pin WAKE2 and a remote wake-up request via LIN 2. The
wake-up source can be read at pin TXD in Fail-safe mode. If an external pull up resistor (typ. 5kΩ) has been added on pin
TXD2 to the power supply of the microcontroller, a high level indicates a remote wake-up request (weak pull down at pin
TXD2), a low level indicates a local wake-up request (strong pull down at pin TXD2).
The wake-up request flag (indicated at pin RXD2) as well as the wake-up source flag (indicated at pin TXD2) are
immediately reset if the microcontroller sets pin EN2 to high (see Figure 2-5 on page 9).
2.15
Fail-safe Features
●
During a short-circuit at LIN to VBattery, the output limits the output current to IBUS_LIM. Due to the power dissipation,
the chip temperature exceeds Toff, and the LIN output is switched off. The chip cools down and after a hysteresis of
Thys it switches the output on again.
●
During a short-circuit from LIN to GND the transceiver can be switched into sleep mode and even in this case the
current consumption is lower than 45µA. If the short-circuit disappears, the transceiver starts with a remote wake-up.
●
If a transceiver is in sleep mode and a floating condition occurs on the bus, the transceiver automatically switches
back to sleep mode, thus decreasing current consumption to less than 45µA in this case.
●
The reverse current is < 2µA at pin LIN during loss of VBAT; this is optimal behavior for bus systems where some slave
nodes are supplied from battery or ignition.
●
●
●
●
Pin EN provides a pull-down resistor to force the transceiver into sleep mode if EN is disconnected.
●
The INH2 output transistor at transceiver 2 is protected by temperature monitoring
Pin RXD is set to floating if VBAT is disconnected.
Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected.
After switching the LIN transceiver into normal mode the TXD pin must be pulled to high longer than 10µs in order to
activate the LIN driver. This feature prevents the bus from being driven into dominant state when the LIN transceiver
is switched into normal mode and TXD is low.
ATA6670 [DATASHEET]
9204H–AUTO–10/14
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3.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VS1, VS2
- Continuous supply voltage
WAKE2
- DC and transient voltage (with 2.7kΩ serial resistor)
- Transient voltage according to ISO7637 (coupling
1nF)
Logic pins (RXD1, RXD2, TXD1, TXD2, EN1, EN2)
LIN1, LIN2
- DC voltage
- Transient voltage according to ISO7637 (coupling
1nF)
INH2
- DC voltage
Min.
Typ.
Max.
Unit
–0.3
+40
V
–27
–150
+40
+100
V
V
–0.3
+5.5
V
–27
–150
+40
+100
V
V
–0.3
VS2 + 0.3
V
ESD according to IBEE LIN EMC
Test specification 1.0 following IEC 61000-4-2
- Pin VS1, VS2, LIN1, LIN2 to GND
- Pin WAKE2 (2.7kΩ serial resistor)
±8
±6
KV
KV
ESD HBM following STM5.1
with 1.5kΩ / 100pF
- Pin VS1, VS2, LIN1, LIN2, WAKE2, INH2 to GND
±6
KV
±3
KV
±750
V
HBM ESD
ANSI/ESD-STM5.1
JESD22-A114
AEC-Q100 (002)
CDM ESD STM 5.3.1
Machine model ESD AEC-Q100-Rev.F (003)
±200
V
Junction temperature
Tj
–40
+150
°C
Storage temperature
Tstg
–55
+150
°C
Symbol
Min.
Max.
Unit
4.
Thermal Characteristics
Parameters
Typ.
Thermal resistance junction to heat slug
RthJC
8
K/W
Thermal resistance junction to ambient, where heat slug
is soldered to PCB according to Jedec
RthJA
45
K/W
Thermal shutdown
Toff
150
165
180
°C
Thermal shutdown hysteresis
Thys
5
10
20
°C
10
ATA6670 [DATASHEET]
9204H–AUTO–10/14
5.
Electrical Characteristics
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No.
1
1.1
1.2
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit Type*
VS
VS
5
13.5
27
V
A
Sleep mode
VLIN > VS – 0.5V
VS < 14V
VS
IVSsleep
10
20
µA
A
Sleep mode,
bus shorted to GND
VLIN = 0V
VS < 14V
VS
IVSsleep_sc
23
45
µA
A
Bus recessive
VS < 14V
VS
IVSrec
0.9
1.3
mA
A
Bus dominant
VS < 14V
Total bus load > 500Ω
VS
IVSdom
1.2
2
mA
A
Bus recessive
VS < 14V
VS
IVSfail
0.5
1.1
mA
A
VS Pin
DC voltage range nominal
Supply current in sleep mode
1.3
Supply current in normal mode
1.4
1.5
Supply current in fail-safe mode
1.6
VS undervoltage threshold on
VS
VSth
4
4.95
V
A
1.7
VS undervoltage threshold off
VS
VSth
4.05
5
V
A
1.8
VS undervoltage threshold
hysteresis
VS
VSth_hys
50
500
mV
A
1.3
8
mA
A
0.4
V
A
2
RXD Output Pin (Open Drain)
2.1
Low-level output sink current
Normal mode
VLIN = 0V, VRXD = 0.4V
RXD
IRXDL
2.2
RXD saturation voltage
5-kΩ pull-up resistor to 5V
RXD
VsatRXD
2.3
High-level leakage current
Normal mode
VLIN = VBAT, VRXD = 5V
RXD
IRXDH
–3
+3
µA
A
2.4
ESD Zener diode
IRXD = 100µA
RXD
VZRXD
5.8
8.6
V
A
3
2.5
TXD Input/Output Pin
3.1
Low-level voltage input
TXD
VTXDL
–0.3
+0.8
V
A
3.2
High-level voltage input
TXD
VTXDH
2
5.5
V
A
3.3
Pull-down resistor
VTXD = 5V
TXD
RTXD
125
600
kΩ
A
3.4
Low-level leakage current
VTXD = 0V
TXD
ITXD_leak
–3
+3
µA
A
3.5
Transceiver 2: Fail-safe
Low-level output sink current
mode, local wake-up
(only available at transceiver 2) VTXD2 = 0.4V
VLIN2 = VBAT
TXD2
ITXD2
1.3
8
mA
A
EN
VENL
–0.3
+0.8
V
A
4
250
2.5
EN Input Pin
4.1
Low-level voltage input
4.2
High-level voltage input
EN
VENH
2
4.3
Pull-down resistor
VEN = 5V
EN
REN
125
4.4
Low-level input current
VEN = 0V
EN
IEN
–3
250
5.5
V
A
600
kΩ
A
+3
µA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA6670 [DATASHEET]
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5.
Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No.
5
Parameters
Test Conditions
Pin
Symbol
Min.
VS2 –
0.75
Max.
Unit Type*
INH 2 Output Pin (Only Available at Transceiver 2)
5.1
High-level voltage
Normal or fail-safe mode
IINH2 = –15mA
INH2
VINH2H
5.2
Switch-on resistance between
VS2 and INH2
Normal or fail-safe mode
INH2
RINH2
5.3
Leakage current
Transceiver 2 in sleep mode
VINH2 = 0V/27V, VS2 = 27V
INH2
IINH2L
WAKE2
6
Typ.
VS2
V
A
50
Ω
A
–3
+3
µA
A
VWAKE2H
VS2 –
1V
VS2 +
0.3V
V
A
VS2 –
3.3V
V
A
30
WAKE2 Input Pin (only available at Transceiver 2)
6.1
High-level input voltage
6.2
Low-level input voltage
IWAKE2 = typically –3µA
WAKE2
VWAKE2L
–1V
6.3
Wake2 pull-up current
VS2 < 27V
WAKE2
IWAKE2
–30
µA
A
6.4
High-level leakage current
VS2 = 27V, VWAKE2 = 27V
WAKE2
IWAKE2
–5
+5
µA
A
0.9 × VS
VS
V
A
7
–10
LIN Bus Driver
7.1
Driver recessive output voltage RLOAD = 500Ω/1kΩ
LIN
VBUSrec
7.2
Driver dominant voltage
VBUSdom_DRV_LoSUP
VVS = 7V, Rload = 500Ω
LIN
V_LoSUP
1.2
V
A
7.3
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 500Ω
LIN
V_HiSUP
2
V
A
7.4
Driver dominant voltage
VBUSdom_DRV_LoSUP
VVS = 7V, Rload = 1000Ω
LIN
V_LoSUP_1k
0.6
V
A
7.5
Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 1000Ω
LIN
V_HiSUP_1k_
0.8
V
A
7.6
Pull-up resistor to VS
The serial diode is
mandatory
LIN
RLIN
20
47
kΩ
A
7.7
Voltage drop at the serial diodes
In pull-up path with Rslave
ISerDiode = 10mA
LIN
VSerDiode
0.4
1.0
V
D
7.8
LIN current limitation
VBUS = VBAT_max
LIN
IBUS_LIM
40
200
mA
A
7.9
Input leakage current at the
receiver, including pull-up
resistor as specified
Input leakage current
driver off
VBUS = 0V, VS = 12V
LIN
IBUS_PAS_dom
–1
mA
A
Driver off
8V < VBAT < 18V
8V < VBUS < 18V
VBUS ≥ VBAT
LIN
IBUS_PAS_rec
Leakage current at ground loss;
control unit disconnected from GNDDevice = VS
7.11 ground; loss of local ground
VBAT =12V
must not affect communication 0V < VBUS < 18V
in the residual network
LIN
IBUS_NO_Gnd
7.10 Leakage current LIN recessive
–10
30
120
10
20
µA
A
+0.5
+10
µA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
12
ATA6670 [DATASHEET]
9204H–AUTO–10/14
5.
Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No.
Pin
Symbol
Leakage current at loss of
battery, node has to sustain the VBAT disconnected
7.12 current that can flow under this VSUP_Device = GND
0V < VBUS < 18V
condition, bus must remain
operational under this condition
LIN
IBUS_NO_Bat
7.13 Capacitance on pin LIN to GND
LIN
CLIN
8
Parameters
Test Conditions
Min.
Typ.
Max.
Unit Type*
0.1
2
µA
A
20
pF
D
0.525
× VS
V
A
LIN Bus Receiver
8.1
Center of receiver threshold
VBUS_CNT =
(Vth_dom + Vth_rec) / 2
LIN
VBUS_CNT
0.475 ×
VS
8.2
Receiver dominant state
VEN = 5V
LIN
VBUSdom
–27
0.4 ×
VS
V
A
8.3
Receiver recessive state
VEN = 5V
LIN
VBUSrec
0.6 × VS
40
V
A
8.4
Receiver input hysteresis
VHYS = Vth_rec – Vth_dom
LIN
VBUShys
0.028 ×
VS
0.175
× VS
V
A
8.5
Pre-wake detection LIN
high-level input voltage
LIN
VLINH
VS –
2V
VS +
0.3V
V
A
8.6
Pre-wake detection LIN
Low-level input voltage
Switches the LIN receiver on
LIN
VLINL
–27V
VS –
3.3V
V
A
8.7
LIN pre-wake pull-up current
VS < 27V
VLIN = 0V
LIN
ILINWAKE
–30
–10
µA
A
VLIN = 0V
LIN
tBUS
30
90
150
µs
A
WAKE2
tWAKE
7
35
50
µs
A
9
0.5 ×
VS
0.1 ×
VS
Internal Timers
9.1
Dominant time for wake-up via
LIN bus
9.2
Debounce time of low pulse for Transceiver 2:
wake-up via pin WAKE2 (only
locla wake-up
available at transceiver 2).
VWAKE2 = 0V
9.3
Time delay for mode change
from fail-safe mode to normal
mode via pin EN
VEN = 5V
EN
tnorm
2
7
15
µs
A
9.4
Time delay for mode change
from normal mode into sleep
mode via pin EN
VEN = 0V
EN
tsleep
7
12
20
µs
B
9.5
TXD dominant time out time
VTXD = 0V
TXD
tdom
27
55
70
ms
A
9.6
Monitoring time for wake-up
over LIN bus
LIN
tmon
6
10
15
ms
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
ATA6670 [DATASHEET]
9204H–AUTO–10/14
13
5.
Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit Type*
LIN Bus Driver AC Parameter with Different Bus Loads
10
Load 1 (small): 1nF, 1kΩ ; Load 2 (large): 10nF, 500Ω ; RRXD = 5kΩ ; CRXD = 20pF;
Load 3 (medium): 6.8nF, 660Ω characterized on samples; 10.1 and 10.2 specifies the timing parameters for proper
operation at 20Kbit/s, 10.3 and 10.4 at 10.4Kbit/s.
10.1 Duty cycle 1
THRec(max) = 0.744 × VS
THDom(max) = 0.581 × VS
VS = 7.0V to 18V
tBit = 50µs
D1 = tbus_rec(min) / (2 × tBit)
LIN
D1
10.2 Duty cycle 2
THRec(min) = 0.422 × VS
THDom(min) = 0.284 × VS
VS = 7.0V to 18V
tBit = 50µs
D2 = tbus_rec(max) / (2 × tBit)
LIN
D2
10.3 Duty cycle 3
THRec(max) = 0.778 × VS
THDom(max) = 0.616 × VS
VS = 7.0V to 18V
tBit = 96µs
D3 = tbus_rec(min) / (2 × tBit)
LIN
D3
10.4 Duty cycle 4
THRec(min) = 0.389 × VS
THDom(min) = 0.251 × VS
VS = 7.0V to 18V
tBit = 96µs
D4 = tbus_rec(max) / (2 × tBit)
LIN
D4
0.590
trec_pd = max(trx_pdr , trx_pdf)
VS = 7.0V to 18V
RXD
trx_pd
6
µs
A
trx_sym = trx_pdr – trx_pdf
VS = 7.0V to 18V
RXD
trx_sym
+2
µs
A
11
11.1
0.396
A
0.581
0.417
A
A
Receiver Electrical AC Parameters of the LIN Physical Layer
LIN receiver, RXD load conditions: CRXD = 20pF, Rpull-up = 5kΩ
Propagation delay of receiver
(see Figure 5-1 on page 15)
Symmetry of receiver
11.2 propagation delay rising edge
minus falling edge
–2
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
14
A
ATA6670 [DATASHEET]
9204H–AUTO–10/14
Figure 5-1. Definition of Bus Timing Parameter
tBit
tBit
tBit
TXD
(Input to transmitting node)
tBus_dom(max)
tBus_rec(min)
Thresholds of
THRec(max)
VS
(Transceiver supply
of transmitting node)
receiving node1
THDom(max)
LIN Bus Signal
Thresholds of
receiving node2
THRec(min)
THDom(min)
tBus_dom(min)
tBus_rec(max)
RXD
(Output of receiving node1)
trx_pdf(1)
trx_pdr(1)
RXD
(Output of receiving node2)
trx_pdr(2)
trx_pdf(2)
Figure 5-2. Typical Application Circuit
+5V
R2
4.7kΩ
VCC
RXD1
RXD1
EN1
EN1
TXD1
TXD1
Microcontroller
RXD2
RXD2
EN2
EN2
R6
WAKE2
2.7kΩ
GND
D3
LL4148
R1
4.7kΩ
TXD2
ADC
TXD2
1
14
2
13
12
3
4
5
6
7
Atmel
ATA6670
(DFN14)
11
10
9
8
R3
1kΩ
VS1
LIN1
LIN1
C1
C4
+
560pF
D1
LL4148
VS2
100nF
LIN2
VBAT
22μF/50V
D2
LL4148
GND2
R4
1kΩ
10kΩ
S1
560pF
GND
C2
INH2
R5
Wake
Switch
C3
GND1
LIN2
R7
R8
ATA6670 [DATASHEET]
9204H–AUTO–10/14
15
Figure 5-3. Application with Minimum External Devices: INH2 Output and WAKE2 Input Not Used
+5V
R2
4.7kΩ
VCC
RXD1
EN1
TXD1
Microcontroller
RXD2
EN2
RXD1
EN1
TXD1
RXD2
EN2
WAKE2
TXD2
GND
D3
LL4148
R1
4.7kΩ
TXD2
1
14
2
13
12
3
4
5
Atmel
ATA6670
(DFN14)
11
10
6
9
7
8
R3
1kΩ
VS1
LIN1
LIN1
C3
GND1
INH2
560pF
GND
C2
100nF
C1
C4
+
560pF
D1
LL4148
VS2
VBAT
22μF/50V
LIN2
D2
LL4148
GND2
R4
1kΩ
LIN2
16
ATA6670 [DATASHEET]
9204H–AUTO–10/14
Ordering Information
Extended Type Number
Package
ATA6670-FFQW-1
LIN Transceiver, Pb-free, 6k, taped and reeled.
Package Information
Top View
D
14
technical drawings
according to DIN
specifications
E
PIN 1 ID
Dimensions in mm
1
Two Step Singulation process
A
A1
Side View
Partially Plated Surface
Bottom View
7
E2
1
Z
COMMON DIMENSIONS
(Unit of Measure = mm)
14
8
e
D2
Z 10:1
L
7.
DFN14
Remarks
A3
6.
Symbol
MIN
NOM
MAX
A
0.8
0.85
0.9
A1
A3
0.0
0.16
0.035
0.21
0.05
0.26
4.6
D
4.4
4.5
D2
3.8
3.9
4
E
2.9
3
3.1
E2
1.5
1.6
1.7
L
0.35
0.4
0.45
b
e
0.25
0.3
0.65
0.35
NOTE
b
10/11/13
TITLE
Package Drawing Contact:
[email protected]
Package: VDFN_4.5x3_14L
Exposed pad 3.9x1.6
GPC
DRAWING NO.
REV.
6.543-5166.03-4
1
ATA6670 [DATASHEET]
9204H–AUTO–10/14
17
8.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
9204H-AUTO-10/14
• Section 6 “Ordering Information” on page 17 updated
• Section 7 “Package Information” on page 17 updated
9204G-AUTO-06/14
• Put datasheet in the latest template
9204F-AUTO-06/12
• Section 5 “Electrical Characteristics” numbers 3.2 and 4.2 on page 11 changed
9204E-AUTO-11/11
• Set datasheet from Preliminary to Standard
9204D-AUTO-10/11
• Section 6 “Electrical Characteristics” number 9.2 on page 14 added
9204C-AUTO-09/11
• Section 7 “Ordering Information” on page 18 changed
9204B-AUTO-03/11
18
History
ATA6670 [DATASHEET]
9204H–AUTO–10/14
• Figure 1-1 “Block Diagram” on page 2 changed
• Section 3.15 “Fail-safe Features” on page 10 changed
XXXXXX
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© 2014 Atmel Corporation. / Rev.: 9204H–AUTO–10/14
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