ATA2525 - Complete

ATA2525
IR Receiver ASSP
DATASHEET
Features
● No external components except PIN diode
● Supply-voltage range: 4.5V to 5.5V
● High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong
signal adaption (ATC)
● High immunity against disturbances from daylight and lamps
● Small size and innovative pad layout
● Available for carrier frequencies between 33kHz to 40kHz; adjusted
by zener diode fusing
● TTL and CMOS compatible
● Suitable minimum burst length ≥ 10 pulses/burst
Applications
● Home entertainment applications
● Home appliances
● Remote control equipment
4854H-AUTO-03/14
1.
Description
The Atmel® IC ATA2525 is a complete IR receiver for data communication that was developed and optimized for use in
carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high
suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of
IR receiver modules. The Atmel ATA2525 is available with standard carrier frequencies (33, 36, 37, 38, 40kHz) and 3
different noise suppression regulation types (standard, lamp, noise) covering requirements of different high-volume remote
control solutions (please refer to selection guide available for Atmel ATA2525/ATA2526). The Atmel ATA2525 operates in a
supply voltage range of 4.5V to 5.5V.
The function of Atmel ATA2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets
two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are
transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a
controlled gain amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0
which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst
signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be
suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to
adapt to the current application to secure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
Input
Oscillator
CGA and
Filter
Demodulator
AGC/ATC and Digital Control
Carrier Frequency f0
ATA2525
Modulated IR Signal
min 10 Pulses
GND
2
ATA2525 [DATASHEET]
4854H–AUTO–03/14
OUT
Microcontroller
2.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Supply voltage
Supply current
Symbol
Value
Unit
VS
–0.3 to +6
V
IS
3
mA
Input voltage
VIN
–0.3 to VS
V
Input DC current at VS = 5V
IIN
0.75
mA
Output voltage
VO
–0.3 to VS
V
Output current
IO
10
mA
Operating temperature
Tamb
–25 to +85
°C
Storage temperature
Tstg
–40 to +125
°C
Power dissipation at Tamb = 25°C
Ptot
30
mW
3.
Electrical Characteristics
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No.
1
Parameters
Symbol
Min.
Supply-voltage range
1.2
Supply current
IIN = 0
VS
IS
Max.
Internal pull-up resistor
Tamb = 25°C;
see Figure 5-7 on page 8
RPU
2.2
Output voltage low
IL = 2mA;
see Figure 5-7 on page 8
VOL
2.3
Output voltage high
Tamb = 25°C
VOH
2.4
Output current clamping
R2 = 0;
see Figure 5-7 on page 8
IOCL
4.5
5
0.8
1.1
Type*
5.5
V
C
1.4
mA
B
kΩ
A
250
mV
B
VS
V
A
mA
B
µA
C
–960
µA
B
–600
pA
B
40
VS – 0.25
8
Input
3.1
Input DC current
VIN = 0;
see Figure 5-7 on page 8
IIN_DCMAX
–85
3.2
Input DC current;
see Figure 5-1 on page 5
VIN = 0; Vs = 5V,
Tamb = 25°C
IIN_DCMAX
–530
Minimum detection
threshold current;
see Figure 5-2 on page 5
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1µA;
square pp,
burst N = 16,
f = f0; tPER = 10ms,
see Figure 5-6 on page 7;
BER = 50(1)
3.3
Unit
Output
2.1
3
Typ.
Supply
1.1
2
Test Conditions
IEemin
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
ATA2525 [DATASHEET]
4854H–AUTO–03/14
3
3.
Electrical Characteristics (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No.
3.4
3.5
4
Parameters
Test Conditions
Symbol
Minimum detection
threshold current with AC
current disturbance
IIN_AC100 = 3 µA at 100
Hz
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1µA,
square pp,
burst N = 16,
f = f0; tPER = 10ms,
see Figure 5-6 on page 7;
BER = 50%(1)
IEemin
Maximum detection
threshold current
Test signal:
see Figure 5-6 on page 7
VS = 5V, Tamb = 25°C,
IIN_DC = 1µA;
square pp,
burst N = 16,
f = f0; tPER = 10ms,
see Figure 5-6 on page 7;
BER = 5%(1)
IEemax
Min.
Typ.
Max.
–850
–400
Unit
Type*
pA
C
µA
D
Controlled Amplifier and Filter
4.1
Maximum value of variable
VS = 5V, Tamb = 25°C
gain (CGA)
GVARMAX
51
dB
D
4.2
Minimum value of variable
VS = 5V, Tamb = 25°C
gain (CGA)
GVARMIN
–5
dB
D
4.3
Total internal
amplification(2)
VS = 5V, Tamb = 25°C
GMAX
71
dB
D
4.4
Center frequency fusing
accuracy of bandpass
VS = 5V, Tamb = 25°C
f0_FUSE
–3
f0
+3
%
A
4.5
Overall accuracy center
frequency of bandpass
f0
–6.7
f0
+4.1
%
C
4.6
BPF bandwidth
kHz
B
–3dB; f0 = 38kHz;
see Figure 5-4 on page 6
B
3.5
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2525 [DATASHEET]
4854H–AUTO–03/14
4.
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
Typical Electrical Curves at Tamb = 25°C
Figure 5-1. VIN versus IIN_DC, VS = 5V
3
2.94
2.79
2.44
VIN (V)
2
1
1.14
0
0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (µA)
Figure 5-2. IEemin versus IIN_DC, VS = 5V
100
IEemin (nA)
5.
10
3.6
1
1.2
0.49
0
0.1
1
10
100
1000
IIN_DC (µA)
ATA2525 [DATASHEET]
4854H–AUTO–03/14
5
Figure 5-3. Data Transmission Rate, VS = 5V
1750
1418
Standard type
1500
Bits/s
1250
1493
1119
Lamp type
1000
735
980
693
750
500
931
730
Noise type
547
250
0
28
32
36
40
44
f0 (kHz)
Figure 5-4. Typical Bandpass Curve
1.1
Relative Amplitude
1.0
0.9
0.8
-3dB
-3dB
0.7
0.6
0.5
Δf
0.4
0.92
0.94
0.96
0.98
1.00
f/f0
Q = f0/Δf; Δf = –3dB values. Example: Q = 1/(1.047 – 0.954) = 11
6
ATA2525 [DATASHEET]
4854H–AUTO–03/14
1.02
1.04
1.06
1.08
Figure 5-5. Illustration of Used Terms
1066μs
533μs
Period (P = 16)
Burst (N = 16 Pulses)
IN
1
7
16
7
7
33μs
OUT
tDON
tDOFF
533μs
Envelope 1
Envelope 16
17056μs/Data Word
OUT
Telegram Pause
Data Word
Data Word
t
17ms
TREP = 62ms
Example: f = 30kHz, burst with 16 pulses, 16 periods
Figure 5-6. Test Circuit
IEe = ΔU1/400kΩ
ΔU1
1nF
VDD = 5V
400kΩ
R 1 = 220Ω
IIN_DC
VS
IIN
IEe
IPIN_AC100
20kΩ
IN
1nF
VPULSE
OUT
GND
ΔU2
+
IIN_DC = ΔU2/40kΩ
20kΩ
f0
16
ATA2525
C 1 = 4.7μF
DC
+
tPER = 10ms
ATA2525 [DATASHEET]
4854H–AUTO–03/14
7
Figure 5-7. Application Circuit
(1)
VDD = 5V
optional
R 2(1) > 2.4kΩ
R 1 = 220Ω
RPU = 40kΩ
IS
VS
IOCL
IN
IIN
ATA2525
IL
OUT
IN
Microcontroller
GND
+
IIN_DC
8
IEe
ATA2525 [DATASHEET]
4854H–AUTO–03/14
C 1 = 4.7μF
VIN
VO
C 2(1) ≤ 470pF
Chip Dimensions
Figure 6-1. Chip Size in µm
990,960
GND
393,839
IN
603,828
scribe
OUT
length
6.
224,495
ATA2525
47,72
VS
Zapping
Versioning
0,0
width
Note:
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Dimensions
Pad metallurgy
Finish
Note:
1.
Length inclusive scribe
1.04mm
Width inclusive scribe
1.11mm
Thickness
290µ ±5%
Pads
80µ × 80µ
Fusing pads
60µ × 60µ
Material
AlCu/AlSiTi(1)
Thickness
0.8µm
Material
Si3N4/SiO2(1)
Thickness
0.7/0.3µm
Value depends on manufacture location.
ATA2525 [DATASHEET]
4854H–AUTO–03/14
9
7.
Ordering Information
Delivery: unsawn wafers (DDW) in box
D(2)
Extended Type Number
Type
(1)
1493
Standard type: high data rate
(1)
980
Lamp type: enhanced suppression of disturbances, secure data transmission
ATA2525S1xx C-DDW
ATA2525S3xx C-DDW
ATA2525S5xx(1)C-DDW
730
Noise type: best suppression of disturbances, low data rate
Notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40kHz)
2. Maximum data transmission rate up to bits/s with f0 = 40kHz, VS = 5V (see Figure 5-2 on page 5
8.
Pad Layout
Figure 8-1. Pad Layout
GND
IN
OUT
ATA2525
VS
Table 8-1.
10
Zapping
Versioning
Pin Description
Symbol
Function
OUT
Data output
VS
Supply voltage
GND
GND
IN
Input pin diode
Zapping
f0 adjust
Versioning
Type adjust
ATA2525 [DATASHEET]
4854H–AUTO–03/14
9.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
4854H-AUTO-03/14
• Put datasheet in the newest template
4854G-AUTO-05/10
4854F-AUTO-09/09
• Page 3: Thermal Resistance table deleted
• Page 3 and 4: Pin column in Electrical Characteristics table deleted
• Put datasheet in newest template
• Ordering Information table changed
• Features on page 1 changed
• Applications on page 1 changed
• Section 1 “Description” on page 1 changed
4854E-AUTO-10/06
• Section 2 “Pin Configuration” on page 2 deleted
• Section 4 “Electrical Characteristics” number 3.3 on page 4 changed
• Section 4 “Electrical Characteristics” number 3.4 on page 4 changed
• Section 6 “ESD” on page 5 deleted
• Section 10 “Ordering Information” on page 10 changed
4854D-AUTO-04/06
• Put datasheet in a new template
• Section 10 “Ordering Information” on page 10 changed
ATA2525 [DATASHEET]
4854H–AUTO–03/14
11
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© 2014 Atmel Corporation. / Rev.: 4854H–AUTO–03/14
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