AT28C16-T - Mature

Features
• Ideal Rewritable Attribute Memory
• Simple Write Operation
•
•
•
•
– Self-Timed Byte Writes
– On-chip Address and Data Latch for SRAM-like Write Operation
– Fast Write Cycle Time - 1 ms
– 5-Volt-Only Nonvolatile Writes
End of Write Detection
– RDY/BUSY Output
– DATA Polling
High Reliability
– Endurance: 100,000 Write Cycles
– Data Retention: 10 Years Minimum
Single 5-Volt Supply for Read and Write
Very Low Power
– 30 mA Active Current
– 100 µA Standby Current
Description
The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only
byte writable nonvolatile memory (EEPROM). Standby current is typically less than
100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration
in-system. Data retention is specified as 10 years minimum, precluding the necessity
for batteries. Three access times have been specified to allow for varying layers of
buffering between the memory and the PCMCIA interface.
The AT28C16-T is accessed like a Static RAM for read and write operations. During a
byte write, the address and data are latched internally. Following the initiation of a
write cycle, the device will go to a busy state and automatically write the latched data
using an internal control timer. The device provides two methods for detecting the end
of a write cycle; the RDY/BUSY output and DATA POLLING of I/O7.
16K (2K x 8)
PCMCIA
Nonvolatile
Attribute
Memory
AT28C16-T
Pin Configurations
Pin Name
Function
A0 - A10
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
TSOP
Top View
OE
NC
A9
A8
NC
WE
VCC
RDY/BUSY
NC
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
Rev. 0258C–10/98
1
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +125°C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
2
AT28C16-T
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
AT28C16-T
Device Operation
READ: The AT28C16-T is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a
high impedance state whenever CE or OE is high. This
dual-line control gives designers increased flexibility in preventing bus contention.
BYTE WRITE: Writing data into the AT28C16-T is similar
to writing into a Static RAM. A low pulse on WE or CE input
with OE high and CE or WE low (respectively) initiates a
byte write. The address is latched on the falling edge of WE
or CE (whichever occurs last) and the data is latched on
the rising edge of WE or CE (whichever occurs first). Once
a byte write is started it will automatically time itself to completion. For the AT28C16-T the write cycle time is 1 ms
maximum. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation.
READY/BUSY: Pin 1 is an open drain READY/BUSY output that indicates the current status of the self-timed internal write cycle. READY/BUSY is actively pulled low during
the write cycle and is released at the completion of the
write. The open drain output allows OR-tying of several
devices to a common interrupt input.
DATA POLLING: The AT28C16-T also provides DATA
polling to signal the completion of a write cycle. During a
write cycle, an attempted read of the data being written
results in the complement of that data for I/O 7 (the other
outputs are indeterminate). When the write cycle is finished, true data appears on all outputs.
WRITE PROTECTION: Inadvertent writes to the device are
protected against in the following ways: (a) VCC sense—if
VCC is below 3.8V (typical) the write function is inhibited; (b)
V CC power on delay—once V CC has reached 3.8V the
device will automatically time out 5 ms (typical) before
allowing a byte write; and (c) write inhibit—holding any one
of OE low, CE high or WE high inhibits byte write cycles.
CHIP CLEAR: The contents of the entire memory of the
AT28C16-T may be set to the high state by the Chip Clear
operation. By setting CE low and OE to 12V, the chip is
cleared when a 10 ms low pulse is applied to WE.
DEVICE IDENTIFICATION: An extra 32 bytes of EEPROM
memory are available to the user for device identification.
By raising A9 to 12V (± 0.5V) and using address locations
7E0H to 7FFH the additional bytes may be written to or
read from in the same manner as the regular memory
array.
3
DC and AC Operating Range
AT28C16-15T
Operating
Temperature (Case)
Com.
0°C - 70°C
Ind.
-40°C - 85°C
5V ± 10%
VCC Power Supply
Operating Modes
Mode
CE
OE
WE
I/O
Read
VIL
VIL
VIH
DOUT
VIL
VIH
VIL
DIN
High Z
Write
(2)
Standby/Write Inhibit
(1)
VIH
X
X
Write Inhibit
X
X
VIH
Write Inhibit
X
VIL
X
Output Disable
X
VIH
X
High Z
VIL
High Z
Chip Erase
Notes:
VIL
VH
(3)
1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC + 1V
10
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC + 1.0V
100
µA
Com.
2
mA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC + 1.0V
Ind.
3
mA
Com.
30
mA
ICC
VCC Active Current
f = 5 MHz; IOUT = 0 mA
Ind.
45
mA
VIL
Input Low Voltage
0.8
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1 mA
VOH
Output High Voltage
IOH = -400 µA
4
Min
2.0
AT28C16-T
V
0.4
2.4
V
V
AT28C16-T
AC Read Characteristics
AT28C16-15T
PCMCIA
Symbol
Atmel
Symbol
Parameter
Min
tC (R)
tRC
Read Cycle Time
150
tA (A)
tACC
Max
Units
ns
Address Access Time
150
ns
tA (CE)
tCE
(1)
CE Access Time
150
ns
tA (OE)
tOE(2)
OE Access Time
0
75
ns
tEN (CE)
tLz(4)
Output Enable Time From CE
0
ns
Output Enable Time From OE
0
ns
ns
(4)
tEN (OE)
tOLZ
tV (A)
tOH
Output Hold Time
0
tDIS (CE)
tDF(3)(4)
Output Disable Time From CE
0
50
ns
tDIS (OE)
tDF(3)(4)
Output Disable Time From OE
0
50
ns
AC Read Waveforms(1)(2)(3)(4)
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
5
AC Write Characteristics
PCMCIA
Symbol
Atmel
Symbol
Parameter
Min
tSU (A)
tAS
Address Setup Time
10
ns
tSU (OE-WE)
tOES
Output Disable Time To WE
10
ns
tSU (CE-WE)
tCS
Chip Enable Time To WE
0
ns
tW (WE)
tWP
Write Enable Pulse Width
100
tSU (D-WEH)
tDS
Data Setup To WE High
50
ns
tH (A)
tAH
Address Hold Time From WE
50
ns
tH (D)
tDH
Data Hold Time From WE High
10
ns
tH (OE-WE)
tOEH
Output Enable Hold Time From WE High
10
ns
tH (CE-WE)
tCH
Chip Enable Hold Time From WE High
0
ns
tD (B)
tDB
Delay From WE High To BUSY Asserted
50
ns
tC (W)
tWC
Write Cycle Time
1
ms
AC Write Waveforms
6
AT28C16-T
Max
1000
Units
ns
AT28C16-T
Data Polling Waveforms
Note:
1.
Data Polling AC Timing Characteristics are the same as the AC Read Characteristics.
Chip Erase Waveforms
tS = tH = 1 µsec (min.)
tW = 10 msec (min.)
VH = 12.0 ± 0.5V
7
Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
150
30
0.1
AT28C16-15TC
28T
Commercial
(0°C to 70°C)
45
0.1
AT28C16-15TI
28T
Industrial
(-40°C to 85°C)
Notes:
Operation Range
1. See Valid Part Numbers table below.
2. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the
faster 150 ns TAA offering.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers
AT28C16
Speed
15
Package and Temperature Combinations
TC, TI
Die Products
Reference Section: Parallel EEPROM Die Products
Package Type
28T
8
28-Lead, Plastic Thin Small Outline Package (TSOP)
AT28C16-T
AT28C16-T
Packaging Information
28T, 28-Lead, Plastic Thin Small Outline Package
(TSOP)
Dimensions in Millimeters and (Inches)*
INDEX
MARK
AREA
11.9 (0.469)
11.7 (0.461)
13.7 (0.539)
13.1 (0.516)
0.27 (0.011)
0.18 (0.007)
0.55 (0.022)
BSC
7.15 (0.281)
REF
8.10 (0.319)
7.90 (0.311)
1.25 (0.049)
1.05 (0.041)
0.20 (0.008)
0.10 (0.004)
0
5 REF
0.20 (0.008)
0.15 (0.006)
0.70 (0.028)
0.30 (0.012)
*Controlling dimension: millimeters
9
10
AT28C16-T
AT28C16-T
11
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© Atmel Corporation 1998.
Atmel Cor poration makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s website. The Company assumes no responsibility for
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Printed on recycled paper.
0258C–10/98/xM
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