AT45DB021B - Mature

Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Single 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
20 MHz Max Clock Frequency
Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Pages (264 Bytes/Page) Main Memory
Supports Page and Block Erase Operations
Two 264-byte SRAM Data Buffers – Allows Receiving of Data
while Reprogramming of Nonvolatile Memory
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low Power Dissipation
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
Hardware Data Protection Feature
100% Compatible to AT45DB021 and AT45DB021A
5.0V-tolerant Inputs: SI, SCK, CS, RESET and WP Pins
Commercial and Industrial Temperature Ranges
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
2-megabit
2.7-volt Only
DataFlash®
AT45DB021B
1. Description
The AT45DB021B is a 2.7-volt only, serial interface Flash memory ideally suited for
a wide variety of digital voice-, image-, program code- and data-storage applications.
Its 2,162,688 bits of memory are organized as 1024 pages of 264 bytes each. In addition to the main memory, the AT45DB021B also contains two SRAM data buffers
of 264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as reading or writing a continuous data stream.
EEPROM emulation (bit or byte alterability) is easily handled with a selfcontained three step Read-Modify-Write operation. Unlike conventional Flash
memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a SPI serial interface to sequentially access its data.
DataFlash supports SPI mode 0 and mode 3. The simple serial interface facilitates
hardware layout, increases system reliability, minimizes switching noise, and reduces
package size and active pin count. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage, and low
power are essential. The device operates at clock frequencies up to 20 MHz with a
typical active read current consumption of 4 mA.
To allow for simple in-system reprogrammability, the AT45DB021B does not require
high input voltages for programming. The device operates from a single power supply,
2.7V to 3.6V, for both the program and read operations. The AT45DB021B is enabled
through the chip select pin (CS) and accessed via a three-wire interface consisting of
the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory
array may not be erased. In other words, the contents of the last page may not be
filled with FFH.
1937J–DFLSH–9/05
2. Pin Configurations and Pinouts
Table 2-1.
Pin Configurations
Pin Name
Function
CS
Chip Select
SCK
Serial Clock
SI
Serial Input
SO
Serial Output
WP
Hardware Page Write Protect Pin
RESET
Chip Reset
RDY/BUSY
Ready/Busy
Figure 2-1.
RDY/BUSY
RESET
WP
NC
NC
VCC
GND
NC
NC
NC
CS
SCK
SI
SO
Figure 2-3.
TSOP Top View, Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
2
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
28-SOIC(1)
GND
NC
NC
CS
SCK
SI
SO
NC
NC
NC
NC
NC
NC
NC
Note:
Figure 2-2.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SI
SCK
RESET
CS
8-SOIC
1
2
3
4
Figure 2-4.
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
NC
NC
WP
RESET
RDY/BUSY
NC
NC
NC
NC
NC
NC
NC
NC
8
7
6
5
SO
GND
VCC
WP
CBGA Top View
through Package
1
2
3
SCK
GND
VCC
A
B
CS RDY/BSY WP
C
SO
SI
RESET
1. This package is not recommended for new designs.
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
3. Block Diagram
FLASH MEMORY ARRAY
WP
PAGE (264 BYTES)
BUFFER 1 (264 BYTES)
SCK
CS
RESET
VCC
GND
RDY/BUSY
BUFFER 2 (264 BYTES)
I/O INTERFACE
SI
SO
4. Memory Array
To provide optimal flexibility, the memory array of the AT45DB021B is divided into three levels of
granularity comprised of sectors, blocks and pages. The Memory Architecture Diagram illustrates the breakdown of each level and details the number of pages per sector and block. All
program operations to the DataFlash occur on a page-by-page basis; however, the optional
erase operations can be performed at the block or page level.
Memory Architecture Diagram
SECTOR ARCHITECTURE
BLOCK ARCHITECTURE
SECTOR 0
SECTOR 0a = 8 Pages
2112 bytes (2K + 64)
BLOCK 1
SECTOR 1
SECTOR 0b = 248 Pages
65,472 bytes (62K + 1984)
BLOCK 0
BLOCK 2
PAGE ARCHITECTURE
8 Pages
PAGE 0
BLOCK 0
Figure 4-1.
PAGE 8
SECTOR 2
SECTOR 0c = 256 Pages
67,584 bytes (64K + 2K)
BLOCK 1
BLOCK 31
BLOCK 33
PAGE 6
PAGE 7
BLOCK 30
BLOCK 32
PAGE 1
PAGE 9
PAGE 14
PAGE 15
BLOCK 62
PAGE 16
BLOCK 63
PAGE 17
BLOCK 64
PAGE 18
BLOCK 65
SECTOR 1 = 512 Pages
135,168 bytes (128K + 4K)
PAGE 1021
BLOCK 126
BLOCK 127
Block = 2112 bytes
(2K + 64)
PAGE 1022
PAGE 1023
Page = 264 bytes
(256 + 8)
3
1937J–DFLSH–9/05
5. Device Operation
The device operation is controlled by instructions from the host processor. The list of instructions
and their associated opcodes are contained in Tables 1 through 4 (pages 9 and 11). A valid
instruction starts with the falling edge of CS followed by the appropriate 8-bit opcode and the
desired buffer or main memory address location. While the CS pin is low, toggling the SCK pin
controls the loading of the opcode and the desired buffer or main memory address location
through the SI (serial input) pin. All instructions, addresses, and data are transferred with the
most significant bit (MSB) first.
Buffer addressing is referenced in the datasheet using the terminology BFA8-BFA0 to denote
the nine address bits required to designate a byte address within a buffer. Main memory
addressing is referenced using the terminology PA9 - PA0 and BA8 - BA0 where PA9 - PA0
denotes the 10 address bits required to designate a page address and BA8-BA0 denotes the
nine address bits required to designate a byte address within the page.
5.1
Read Commands
By specifying the appropriate opcode, data can be read from the main memory or from either
one of the two data buffers. The DataFlash supports two categories of read modes in relation to
the SCK signal. The differences between the modes are in respect to the inactive state of the
SCK signal as well as which clock cycle data will begin to be output. The two categories, which
are comprised of four modes total, are defined as Inactive Clock Polarity Low or Inactive Clock
Polarity High and SPI Mode 0 or SPI Mode 3. A separate opcode (refer to Table 5-3 on page 9
for a complete list) is used to select which category will be used for reading. Please refer to the
“Detailed Bit-level Read Timing” diagrams in this datasheet for details on the clock cycle
sequences for each mode.
5.1.1
Continuous Array Read
By supplying an initial starting address for the main memory array, the Continuous Array Read
command can be utilized to sequentially read a continuous stream of data from the device by
simply providing a clock signal; no additional addressing information or control signals need to
be provided. The DataFlash incorporates an internal address counter that will automatically
increment on every clock cycle, allowing one continuous read operation without the need of
additional address sequences. To perform a continuous read, an opcode of 68H or E8H must be
clocked into the device followed by 24 address bits and 32 don’t care bits. The first five bits of
the 24-bit address sequence are reserved for upward and downward compatibility to larger and
smaller density devices (see Notes under “Command Sequence for Read/Write Operations” diagram). The next 10 address bits (PA9- PA0) specify which page of the main memory array to
read, and the last nine bits (BA8-BA0) of the 24-bit address sequence specify the starting byte
address within the page. The 32 don’t care bits that follow the 24 address bits are needed to initialize the read operation. Following the 32 don’t care bits, additional clock pulses on the SCK
pin will result in serial data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bits, the don’t care
bits, and the reading of data. When the end of a page in main memory is reached during a Continuous Array Read, the device will continue reading at the beginning of the next page with no
delays incurred during the page boundary crossover (the crossover from the end of one page to
the beginning of the next page). When the last bit in the main memory array has been read, the
device will continue reading back at the beginning of the first page of memory. As with crossing
over page boundaries, no delays will be incurred when wrapping around from the end of the
array to the beginning of the array.
4
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin.
The maximum SCK frequency allowable for the Continuous Array Read is defined by the fCAR
specification. The Continuous Array Read bypasses both data buffers and leaves the contents
of the buffers unchanged.
5.1.2
Main Memory Page Read
A Main Memory Page Read allows the user to read data directly from any one of the 1024 pages
in the main memory, bypassing both of the data buffers and leaving the contents of the buffers
unchanged. To start a page read, an opcode of 52H or D2H must be clocked into the device followed by 24 address bits and 32 don’t care bits. The first five bits of the 24-bit address sequence
are reserved bits, the next 10 address bits (PA9-PA0) specify the page address, and the next
nine address bits (BA8- BA0) specify the starting byte address within the page. The 32 don’t
care bits which follow the 24 address bits are sent to initialize the read operation. Following the
32 don’t care bits, additional pulses on SCK result in serial data being output on the SO (serial
output) pin. The CS pin must remain low during the loading of the opcode, the address bits, the
don’t care bits and the reading of data. When the end of a page in main memory is reached during a Main Memory Page Read, the device will continue reading at the beginning of the same
page. A low-to-high transition on the CS pin will terminate the read operation and tri-state the
SO pin.
5.1.3
Buffer Read
Data can be read from either one of the two buffers, using different opcodes to specify which
buffer to read from. An opcode of 54H or D4H is used to read data from buffer 1, and an opcode
of 56H or D6H is used to read data from buffer 2. To perform a Buffer Read, the eight bits of the
opcode must be followed by 15 don’t care bits, nine address bits, and eight don’t care bits. Since
the buffer size is 264-bytes, nine address bits (BFA8-BFA0) are required to specify the first byte
of data to be read from the buffer. The CS pin must remain low during the loading of the opcode,
the address bits, the don’t care bits and the reading of data. When the end of a buffer is reached,
the device will continue reading back at the beginning of the buffer. A low-to-high transition on
the CS pin will terminate the read operation and tri-state the SO pin.
5.1.4
Status Register Read
The status register can be used to determine the device’s ready/busy status, the result of a Main
Memory Page to Buffer Compare operation, or the device density. To read the status register,
an opcode of 57H or D7H must be loaded into the device. After the last bit of the opcode is
shifted in, the eight bits of the status register, starting with the MSB (bit 7), will be shifted out on
the SO pin during the next eight clock cycles. The five most-significant bits of the status register
will contain device information, while the remaining three least-significant bits are reserved for
future use and will have undefined values. After bit 0 of the status register has been shifted out,
the sequence will repeat itself (as long as CS remains low and SCK is being toggled) starting
again with bit 7. The data in the status register is constantly updated, so each repeating
sequence will output new data.
Table 5-1.
Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
RDY/BUSY
COMP
0
1
0
1
X
X
Ready/Busy status is indicated using bit 7 of the status register. If bit 7 is a 1, then the device is
not busy and is ready to accept the next command. If bit 7 is a 0, then the device is in a busy
state. The user can continuously poll bit 7 of the status register by stopping SCK at a low level
5
1937J–DFLSH–9/05
once bit 7 has been output. The status of bit 7 will continue to be output on the SO pin, and once
the device is no longer busy, the state of SO will change from 0 to 1. There are eight operations
that can cause the device to be in a busy state: Main Memory Page to Buffer Transfer, Main
Memory Page to Buffer Compare, Buffer to Main Memory Page Program with Built-in Erase,
Buffer to Main Memory Page Program without Built-in Erase, Page Erase, Block Erase, Main
Memory Page Program, and Auto Page Rewrite.
The result of the most recent Main Memory Page to Buffer Compare operation is indicated using
bit 6 of the status register. If bit 6 is a 0, then the data in the main memory page matches the
data in the buffer. If bit 6 is a 1, then at least one bit of the data in the main memory page does
not match the data in the buffer.
The device density is indicated using bits 5, 4, 3 and 2 of the status register. For the
AT45DB021B, the four bits are 0, 1, 0 and 1. The decimal value of these four binary bits does
not equate to the device density; the four bits represent a combinational code relating to differing
densities of Serial DataFlash devices, allowing a total of sixteen different density configurations.
5.2
5.2.1
Program and Erase Commands
Buffer Write
Data can be shifted in from the SI pin into either buffer 1 or buffer 2. To load data into either
buffer, an 8-bit opcode, 84H for buffer 1 or 87H for buffer 2, must be followed by 15 don't care
bits and nine address bits (BFA8-BFA0). The nine address bits specify the first byte in the buffer
to be written. The data is entered following the address bits. If the end of the data buffer is
reached, the device will wrap around back to the beginning of the buffer. Data will continue to be
loaded into the buffer until a low-to-high transition is detected on the CS pin.
5.2.2
Buffer to Main Memory Page Program with Built-in Erase
Data written into either buffer 1 or buffer 2 can be programmed into the main memory. To start
the operation, an 8-bit opcode (83H for buffer 1 or 86H for buffer 2) must be followed by the five
reserved bits, 10 address bits (PA9-PA0) that specify the page in the main memory to be written, and nine additional don’t care bits. When a low-to-high transition occurs on the CS pin, the
part will first erase the selected page in main memory to all 1s and then program the data stored
in the buffer into the specified page in the main memory. Both the erase and the programming of
the page are internally self-timed and should take place in a maximum time of tEP. During this
time, the status register will indicate that the part is busy.
5.2.3
Buffer to Main Memory Page Program without Built-in Erase
A previously erased page within main memory can be programmed with the contents of either
buffer 1 or buffer 2. To start the operation, an 8-bit opcode (88H for buffer 1 or 89H for buffer 2)
must be followed by the five reserved bits, 10 address bits (PA9-PA0) that specify the page in
the main memory to be written, and nine additional don’t care bits. When a low-to-high transition
occurs on the CS pin, the part will program the data stored in the buffer into the specified page in
the main memory. It is necessary that the page in main memory that is being programmed has
been previously erased. The programming of the page is internally self-timed and should take
place in a maximum time of tP. During this time, the status register will indicate that the part is
busy.
Successive page programming operations without doing a page erase are not recommended. In
other words, changing bytes within a page from a “1” to a “0” during multiple page programming
operations without erasing that page is not recommended.
6
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
5.2.4
Page Erase
The optional Page Erase command can be used to individually erase any page in the main
memory array allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized at a later time. To perform a Page Erase, an opcode of 81H must be loaded
into the device, followed by five reserved bits, ten address bits (PA9-PA0), and nine don’t care
bits. The ten address bits are used to specify which page of the memory array is to be erased.
When a low-to-high transition occurs on the CS pin, the part will erase the selected page to 1s.
The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the status register will indicate that the part is busy.
5.2.5
Block Erase
A block of eight pages can be erased at one time allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized to reduce programming times when writing
large amounts of data to the device. To perform a Block Erase, an opcode of 50H must be
loaded into the device, followed by five reserved bits, seven address bits (PA9 -PA3), and 12
don’t care bits. The seven address bits are used to specify which block of eight pages is to be
erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected
block of eight pages to 1s. The erase operation is internally self-timed and should take place in a
maximum time of tBE. During this time, the status register will indicate that the part is busy.
Table 5-2.
5.2.6
Block Erase Addressing
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
Block
0
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
0
1
0
X
X
X
2
0
0
0
0
0
1
1
X
X
X
3
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
1
0
0
X
X
X
124
1
1
1
1
1
0
1
X
X
X
125
1
1
1
1
1
1
0
X
X
X
126
1
1
1
1
1
1
1
X
X
X
127
Main Memory Page Program through Buffer
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program
with Built-in Erase operations. Data is first shifted into buffer 1 or buffer 2 from the SI pin and
then programmed into a specified page in the main memory. To initiate the operation, an 8-bit
opcode (82H for buffer 1 or 85H for buffer 2) must be followed by the five reserved bits and 20
address bits. The 10 most-significant address bits (PA9-PA0) select the page in the main memory where data is to be written, and the next nine address bits (BFA8-BFA0) select the first byte
in the buffer to be written. After all address bits are shifted in, the part will take data from the SI
pin and store it in one of the data buffers. If the end of the buffer is reached, the device will wrap
around back to the beginning of the buffer. When there is a low-to-high transition on the CS pin,
the part will first erase the selected page in main memory to all 1s and then program the data
stored in the buffer into the specified page in the main memory. Both the erase and the programming of the page are internally self-timed and should take place in a maximum of time tEP.
During this time, the status register will indicate that the part is busy.
7
1937J–DFLSH–9/05
5.3
Additional Commands
5.3.1
Main Memory Page to Buffer Transfer
A page of data can be transferred from the main memory to either buffer 1 or buffer 2. To start
the operation, an 8-bit opcode, 53H for buffer 1 and 55H for buffer 2, must be followed by the
five reserved bits, 10 address bits (PA9-PA0) which specify the page in main memory that is to
be transferred, and nine don’t care bits. The CS pin must be low while toggling the SCK pin to
load the opcode, the address bits, and the don’t care bits from the SI pin. The transfer of the
page of data from the main memory to the buffer will begin when the CS pin transitions from a
low to a high state. During the transfer of a page of data (tXFR), the status register can be read to
determine whether the transfer has been completed or not.
5.3.2
Main Memory Page to Buffer Compare
A page of data in main memory can be compared to the data in buffer 1 or buffer 2. To initiate
the operation, an 8-bit opcode (60H for buffer 1 and 61H for buffer 2) must be followed by 24
address bits consisting of the five reserved bits, 10 address bits (PA9-PA0) which specify the
page in the main memory that is to be compared to the buffer, and nine don’t care bits. The CS
pin must be low while toggling the SCK pin to load the opcode, the address bits and the don’t
care bits from the SI pin. On the low-to-high transition of the CS pin, the 264 bytes in the
selected main memory page will be compared with the 264 bytes in buffer 1 or buffer 2. During
this time (tXFR), the status register will indicate that the part is busy. On completion of the compare operation, bit 6 of the status register is updated with the result of the compare.
5.3.3
Auto Page Rewrite
This mode is needed only if multiple bytes within a page or multiple pages of data are modified in
a random fashion. This mode is a combination of two operations: Main Memory Page to Buffer
Transfer and Buffer to Main Memory Page Program with Built-in Erase. A page of data is first
transferred from the main memory to buffer 1 or buffer 2, and then the same data (from buffer 1
or buffer 2) is programmed back into its original page of main memory. To start the rewrite operation, an 8-bit opcode (58H for buffer 1 or 59H for buffer 2) must be followed by the five reserved
bits, 10 address bits (PA9-PA0) that specify the page in main memory to be rewritten, and nine
additional don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first
transfer data from the page in main memory to a buffer and then program the data from the
buffer back into same page of main memory. The operation is internally self-timed and should
take place in a maximum time of tEP. During this time, the status register will indicate that the
part is busy.
If a sector is programmed or reprogrammed sequentially page-by-page, then the programming
algorithm shown in Figure 15-1 on page 25 is recommended. Otherwise, if multiple bytes in a
page or several pages are programmed randomly in a sector, then the programming algorithm
shown in Figure 15-2 on page 26 is recommended. Each page within a sector must be
updated/rewritten at least once within every 10,000 cumulative page erase/program operations
in that sector.
8
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
5.4
Operation Mode Summary
The modes described can be separated into two groups – modes which make use of the Flash
memory array (Group A) and modes which do not make use of the Flash memory array (Group
B).
Group A modes consist of:
1. Main Memory Page Read
2. Main Memory Page to Buffer 1 (or 2) Transfer
3. Main Memory Page to Buffer 1 (or 2) Compare
4. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
5. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
6. Page Erase
7. Block Erase
8. Main Memory Page Program through Buffer
9. Auto Page Rewrite
Group B modes consist of:
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
If a Group A mode is in progress (not fully completed), then another mode in Group A should not
be started. However, during this time in which a Group A mode is in progress, modes in Group B
can be started.
This gives the Serial DataFlash the ability to virtually accommodate a continuous data stream.
While data is being programmed into main memory from buffer 1, data can be loaded into buffer
2 (or vice versa). See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
Table 5-3.
Read Commands
Command
SCK Mode
Opcode
Inactive Clock Polarity Low or High
68H
SPI Mode 0 or 3
E8H
Inactive Clock Polarity Low or High
52H
SPI Mode 0 or 3
D2H
Inactive Clock Polarity Low or High
54H
SPI Mode 0 or 3
D4H
Inactive Clock Polarity Low or High
56H
SPI Mode 0 or 3
D6H
Inactive Clock Polarity Low or High
57H
SPI Mode 0 or 3
D7H
Continuous Array Read
Main Memory Page Read
Buffer 1 Read
Buffer 2 Read
Status Register Read
9
1937J–DFLSH–9/05
Table 5-4.
Program and Erase Commands
Command
SCK Mode
Opcode
Buffer 1 Write
Any
84H
Buffer 2 Write
Any
87H
Buffer 1 to Main Memory Page Program with Built-in Erase
Any
83H
Buffer 2 to Main Memory Page Program with Built-in Erase
Any
86H
Buffer 1 to Main Memory Page Program without Built-in Erase
Any
88H
Buffer 2 to Main Memory Page Program without Built-in Erase
Any
89H
Page Erase
Any
81H
Block Erase
Any
50H
Main Memory Page Program through Buffer 1
Any
82H
Main Memory Page Program through Buffer 2
Any
85H
SCK Mode
Opcode
Main Memory Page to Buffer 1 Transfer
Any
53H
Main Memory Page to Buffer 2 Transfer
Any
55H
Main Memory Page to Buffer 1 Compare
Any
60H
Main Memory Page to Buffer 2 Compare
Any
61H
Auto Page Rewrite through Buffer 1
Any
58H
Auto Page Rewrite through Buffer 2
Any
59H
Table 5-5.
Additional Commands
Command
Note:
10
In Tables 2 and 3, an SCK mode designation of “Any” denotes any one of the four modes of operation (Inactive Clock Polarity
Low, Inactive Clock Polarity High, SPI Mode 0, or SPI Mode 3).
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
Table 5-6.
Detailed Bit-level Addressing Sequence
Reserved
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
BA8
BA7
BA6
BA5
BA4
BA3
BA2
BA1
BA0
Additional
Don’t Care
Bytes
Required
50H
0 1 0 1 0 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
x
x
x
N/A
52H
0 1 0 1 0 0 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
4 Bytes
53H
0 1 0 1 0 0 1 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
54H
0 1 0 1 0 1 0 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
55H
0 1 0 1 0 1 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
56H
0 1 0 1 0 1 1 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
57H
0 1 0 1 0 1 1 1
58H
0 1 0 1 1 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
59H
0 1 0 1 1 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
60H
0 1 1 0 0 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
61H
0 1 1 0 0 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
68H
0 1 1 0 1 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
4 Bytes
81H
1 0 0 0 0 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
82H
1 0 0 0 0 0 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
N/A
83H
1 0 0 0 0 0 1 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
84H
1 0 0 0 0 1 0 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
N/A
85H
1 0 0 0 0 1 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
N/A
86H
1 0 0 0 0 1 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
87H
1 0 0 0 0 1 1 1 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
N/A
88H
1 0 0 0 1 0 0 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
89H
1 0 0 0 1 0 0 1 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
x
x
x
x
x
x
x
x
x
N/A
D2H
1 1 0 1 0 0 1 0 r
r
r
r
r
P
P
P
P
P
P
P
P
P
P
B
B
B
B
B
B
B
B
B
4 Bytes
D4H
1 1 0 1 0 1 0 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
D6H
1 1 0 1 0 1 1 0 x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
B
B
B
B
B
B
B
B
B
1 Byte
D7H
1 1 0 1 0 1 1 1
E8H
1 1 1 0 1 0 0 0 r
Opcode
Note:
Opcode
Reserved
Reserved
Address Byte
Reserved
Address Byte
Reserved
Address Byte
N/A
N/A
N/A
r
r
r
r
N/A
N/A
P
P
P
P
P
P
P
P
N/A
N/A
P
P
B
B
B
B
B
B
N/A
B
B
B
4 Bytes
r = Reserved Bit
P = Page Address Bit
B = Byte/Buffer Address Bit
x = Don’t Care
11
1937J–DFLSH–9/05
5.5
Pin Descriptions
SERIAL INPUT (SI): The SI pin is an input-only pin and is used to shift data into the device. The
SI pin is used for all data input, including opcodes and address sequences.
SERIAL OUTPUT (SO): The SO pin is an output-only pin and is used to shift data out from the
device.
SERIAL CLOCK (SCK): The SCK pin is an input-only pin and is used to control the flow of data
to and from the DataFlash. Data is always clocked into the device on the rising edge of SCK and
clocked out of the device on the falling edge of SCK.
CHIP SELECT (CS): The DataFlash is selected when the CS pin is low. When the device is not
selected, data will not be accepted on the SI pin, and the SO pin will remain in a high-impedance
state. A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition on the CS pin is required to end an operation.
WRITE PROTECT: If the WP pin is held low, the first 256 pages of the main memory cannot be
reprogrammed. The only way to reprogram the first 256 pages is to first drive the protect pin high
and then use the program commands previously mentioned. If this pin and feature are not utilized it is recommended that the WP pin be driven high externally.
RESET: A low state on the reset pin (RESET) will terminate the operation in progress and reset
the internal state machine to an idle state. The device will remain in the reset condition as long
as a low level is present on the RESET pin. Normal operation can resume once the RESET pin
is brought back to a high level.
The device incorporates an internal power-on reset circuit, so there are no restrictions on the
RESET pin during power-on sequences. If this pin and feature are not utilized it is recommended
that the RESET pin be driven high externally.
READY/BUSY: This open-drain output pin will be driven low when the device is busy in an internally self-timed operation. This pin, which is normally in a high state (through a 1kΩ external
pull-up resistor), will be pulled low during programming operations, compare operations, and
during page-to-buffer transfers.
The busy status indicates that the Flash memory array and one of the buffers cannot be
accessed; read and write operations to the other buffer can still be performed.
6. Power-on/Reset State
When power is first applied to the device, or when recovering from a reset condition, the device
will default to SPI Mode 3. In addition, the SO pin will be in a high-impedance state, and a highto-low transition on the CS pin will be required to start a valid instruction. The SPI mode will be
automatically selected on every falling edge of CS by sampling the inactive clock state. After
power is applied and VCC is at the minimum datasheet value, the system should wait 20 ms
before an operational mode is started.
12
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
7. Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE:
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
8. DC and AC Operating Range
AT45DB021B
0°C to 70°C
Com.
Operating Temperature (Case)
-40°C to 85°C
Ind.
VCC Power Supply
(1)
2.7V to 3.6V
Note:
1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before an
operational mode is started.
8.1
DC Characteristics
Symbol
Parameter
Condition
ISB
Standby Current
ICC1(1)
Typ
Max
Units
CS, RESET, WP = VCC, all inputs
at CMOS levels
2
10
µA
Active Current, Read
Operation
f = 15 MHz; IOUT = 0 mA;
VCC = 3.6V
4
10
mA
ICC2
Active Current,
Program/Erase Operation
VCC = 3.6V
15
35
mA
ILI
Input Load Current
VIN = CMOS levels
1
µA
ILO
Output Leakage Current
VI/O = CMOS levels
1
µA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA; VCC = 2.7V
VOH
Output High Voltage
IOH = -100 µA
Note:
Min
2.0
V
0.4
VCC - 0.2V
V
V
1. Icc1 during a buffer read is 20mA maximum.
13
1937J–DFLSH–9/05
8.2
AC Characteristics
Symbol
Parameter
fSCK
Max
Units
SCK Frequency
20
MHz
fCAR
SCK Frequency for Continuous Array Read
20
MHz
tWH
SCK High Time
22
ns
tWL
SCK Low Time
22
ns
tCS
Minimum CS High Time
250
ns
tCSS
CS Setup Time
250
ns
tCSH
CS Hold Time
250
ns
tCSB
CS High to RDY/BUSY Low
tSU
Data In Setup Time
5
ns
tH
Data In Hold Time
10
ns
tHO
Output Hold Time
0
ns
tDIS
Output Disable Time
18
ns
tV
Output Valid
20
ns
tXFR
Page to Buffer Transfer/Compare Time
250
µs
tEP
Page Erase and Programming Time
20
ms
tP
Page Programming Time
14
ms
tPE
Page Erase Time
8
ms
tBE
Block Erase Time
12
ms
tRST
RESET Pulse Width
tREC
RESET Recovery Time
8.3
Min
200
10
ns
µs
1
µs
Input Test Waveforms and Measurement Levels
AC
DRIVING
LEVELS
2.4V
2.0
0.8
0.45V
AC
MEASUREMENT
LEVEL
tR, tF < 3 ns (10% to 90%)
8.4
Output Test Load
DEVICE
UNDER
TEST
30 pF
14
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
9. AC Waveforms
Two different timing diagrams are shown below. Waveform 1 shows the SCK signal being low
when CS makes a high-to-low transition, and Waveform 2 shows the SCK signal being high
when CS makes a high-to-low transition. Both waveforms show valid timing diagrams. The setup
and hold times for the SI signal are referenced to the low-to-high transition on the SCK signal.
Waveform 1 shows timing that is also compatible with SPI Mode 0, and Waveform 2 shows timing that is compatible with SPI Mode 3.
9.1
Waveform 1 – Inactive Clock Polarity Low and SPI Mode 0
tCS
CS
tWH
tCSS
tWL
tCSH
SCK
tHO
tV
SO
HIGH IMPEDANCE
VALID OUT
tSU
SI
9.2
tDIS
HIGH IMPEDANCE
tH
VALID IN
Waveform 2 – Inactive Clock Polarity High and SPI Mode 3
tCS
CS
tCSS
tWL
tWH
tCSH
SCK
tV
SO
HIGH Z
tHO
VALID OUT
tSU
SI
tDIS
HIGH IMPEDANCE
tH
VALID IN
15
1937J–DFLSH–9/05
9.3
Reset Timing (Inactive Clock Polarity Low Shown)
CS
tREC
tCSS
SCK
tRST
RESET
HIGH IMPEDANCE
HIGH IMPEDANCE
SO
SI
Note:
The CS signal should be in the high state before the RESET signal is deasserted.
9.4
Command Sequence for Read/Write Operations (except Status Register Read)
SI
MSB
r r r r rXXX
Reserved for
larger densities
Notes:
CMD
8 bits
8 bits
XXXX XXXX
Page Address
(PA9-PA0)
8 bits
XXXX XXXX
LSB
Byte/Buffer Address
(BA8-BA0/BFA8-BFA0)
1. “r” designates bits reserved for larger densities.
2. It is recommended that “r” be a logical “0” for densities of 2M bits or smaller.
3. For densities larger than 2M bits, the “r” bits become the most significant Page Address bit for the appropriate density.
16
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
10. Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (256 BYTES)
BUFFER 1 TO
PAGE PROGRAM
PAGE PROGRAM
THROUGH BUFFER 2
BUFFER 1 (256 BYTES)
BUFFER 2 TO
PAGE PROGRAM
BUFFER 2 (256 BYTES)
PAGE PROGRAM
THROUGH BUFFER 1
BUFFER 1
WRITE
BUFFER 2
WRITE
I/O INTERFACE
SI
10.1
Main Memory Page Program through Buffers
· Completes writing into selected buffer
· Starts self-timed erase/program operation
CS
SI
10.2
CMD
r r r r r, PA9-7
PA6-0, BFA8
BFA7-0
n
n+1
Last Byte
Buffer Write
· Completes writing into selected buffer
CS
SI
10.3
CMD
X
X···X, BFA8
BFA7-0
n
n+1
Last Byte
Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
Starts self-timed erase/program operation
CS
SI
Each transition represents
8 bits and 8 clock cycles
CMD
r r r r r, PA9-7
PA6-0, X
X
n = 1st byte read
n+1 = 2nd byte read
17
1937J–DFLSH–9/05
11. Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
FLASH MEMORY ARRAY
PAGE (264 BYTES)
MAIN MEMORY
PAGE TO
BUFFER 2
MAIN MEMORY
PAGE TO
BUFFER 1
BUFFER 1 (264 BYTES)
BUFFER 2 (264 BYTES)
BUFFER 1
READ
BUFFER 2
READ
MAIN MEMORY
PAGE READ
I/O INTERFACE
SO
11.1
Main Memory Page Read
CS
SI
r r r r r, PA9-7
CMD
BA7-0
PA6-0, BA8
X
X
X
X
SO
11.2
n
n+1
Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)
Starts reading page data into buffer
CS
SI
CMD
r r r r r, PA9-7
PA6-0, X
X
SO
11.3
Buffer Read
CS
SI
SO
Each transition represents
8 bits and 8 clock cycles
18
CMD
X
X···X, BFA8
BFA7-0
X
n
n+1
n = 1st byte read
n+1 = 2nd byte read
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
12. Detailed Bit-level Read Timing – Inactive Clock Polarity Low
12.1
Continuous Array Read (Opcode: 68H)
CS
SCK
1
2
63
64
0
1
X
X
65
66
67
68
tSU
SI
tV
HIGH-IMPEDANCE
SO
DATA OUT
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
12.2
D6
D5
BIT 0
OF
PAGE n+1
Main Memory Page Read (Opcode: 52H)
CS
SCK
1
2
3
4
5
60
61
62
63
64
0
X
X
X
X
X
65
66
67
tSU
COMMAND OPCODE
SI
0
1
0
1
tV
SO
HIGH-IMPEDANCE
DATA OUT
D7
MSB
D6
D5
19
1937J–DFLSH–9/05
12.3
Buffer Read (Opcode: 54H or 56H)
CS
SCK
1
2
3
4
5
36
37
38
39
40
0
X
X
X
X
X
41
42
43
tSU
COMMAND OPCODE
SI
1
0
1
0
tV
HIGH-IMPEDANCE
SO
12.4
DATA OUT
D7
MSB
D6
D5
Status Register Read (Opcode: 57H)
CS
SCK
1
2
0
1
3
4
5
6
7
8
1
1
9
10
11
12
16
17
tSU
COMMAND OPCODE
SI
0
1
0
1
tV
SO
20
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D7
MSB
D6
D5
D1
D0
LSB
D7
MSB
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
13. Detailed Bit-level Read Timing – Inactive Clock Polarity High
13.1
Continuous Array Read (Opcode: 68H)
CS
SCK
1
2
63
64
65
66
67
tSU
SI
1
0
X
X
X
tV
HIGH-IMPEDANCE
SO
DATA OUT
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
13.2
D6
D5
BIT 0
OF
PAGE n+1
Main Memory Page Read (Opcode: 52H)
CS
SCK
1
2
3
4
5
61
62
63
64
65
66
67
68
tSU
COMMAND OPCODE
SI
1
0
1
0
0
X
X
X
X
X
tV
SO
13.3
DATA OUT
HIGH-IMPEDANCE
D7
MSB
D6
D5
D4
Buffer Read (Opcode: 54H or 56H)
CS
SCK
1
2
3
4
5
37
38
39
40
41
42
44
43
tSU
COMMAND OPCODE
SI
0
1
0
1
0
X
X
X
X
X
tV
SO
HIGH-IMPEDANCE
DATA OUT
D7
MSB
D6
D5
D4
21
1937J–DFLSH–9/05
13.4
Status Register Read (Opcode: 57H)
CS
SCK
1
2
3
4
5
6
7
8
9
10
11
12
17
18
tSU
COMMAND OPCODE
SI
1
0
1
0
0
1
1
1
tV
STATUS REGISTER OUTPUT
HIGH-IMPEDANCE
SO
D7
MSB
D6
D5
D4
D0
LSB
D7
MSB
D6
D5
D6
14. Detailed Bit-level Read Timing – SPI Mode 0
14.1
Continuous Array Read (Opcode: E8H)
CS
SCK
1
2
62
63
64
1
1
X
X
X
65
66
67
tSU
SI
tV
HIGH-IMPEDANCE
SO
DATA OUT
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
14.2
BIT 0
OF
PAGE n+1
Main Memory Page Read (Opcode: D2H)
CS
SCK
1
2
3
4
5
60
61
62
63
64
0
X
X
X
X
X
65
66
67
tSU
COMMAND OPCODE
SI
1
1
0
1
tV
SO
HIGH-IMPEDANCE
DATA OUT
D7
D6
D5
D4
MSB
22
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
14.3
Buffer Read (Opcode: D4H or D6H)
CS
SCK
1
2
3
4
5
36
37
38
39
40
0
X
X
X
X
X
41
42
43
tSU
COMMAND OPCODE
SI
1
1
1
0
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D4
D5
MSB
14.4
Status Register Read (Opcode: D7H)
CS
SCK
1
2
1
1
3
4
5
6
7
8
1
1
9
10
D7
MSB
D6
11
12
16
17
tSU
COMMAND OPCODE
SI
1
0
0
1
tV
STATUS REGISTER OUTPUT
HIGH-IMPEDANCE
SO
D5
D4
D1
D0
LSB
D6
D5
D7
MSB
15. Detailed Bit-level Read Timing – SPI Mode 3
15.1
Continuous Array Read (Opcode: E8H)
CS
SCK
1
2
63
64
65
66
67
tSU
SI
1
1
X
X
X
tV
SO
HIGH-IMPEDANCE
DATA OUT
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 2111
OF
PAGE n
BIT 0
OF
PAGE n+1
23
1937J–DFLSH–9/05
15.2
Main Memory Page Read (Opcode: D2H)
CS
SCK
1
2
3
4
5
61
62
63
64
65
66
67
68
tSU
COMMAND OPCODE
SI
1
1
1
0
0
X
X
X
X
X
tV
SO
15.3
DATA OUT
HIGH-IMPEDANCE
D7
MSB
D6
D5
D4
Buffer Read (Opcode: D4H or D6H)
CS
SCK
1
2
3
4
5
37
38
39
40
41
42
43
44
tSU
COMMAND OPCODE
SI
1
1
1
0
0
X
X
X
X
X
tV
SO
15.4
DATA OUT
HIGH-IMPEDANCE
D7
MSB
D6
D5
D4
Status Register Read (Opcode: D7H)
CS
SCK
1
2
3
4
5
6
7
8
9
10
11
12
17
18
tSU
COMMAND OPCODE
SI
1
1
0
1
0
1
1
1
tV
SO
24
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D7
MSB
D6
D5
D4
D0
LSB
D7
MSB
D6
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
Figure 15-1. Algorithm for Sequentially Programming or Reprogramming the Entire Array
START
provide address
and data
BUFFER WRITE
(84H, 87H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
END
Notes:
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array
page-by-page.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
25
1937J–DFLSH–9/05
Figure 15-2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAIN MEMORY PAGE
TO BUFFER TRANSFER
(53H, 55H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
BUFFER WRITE
(84H, 87H)
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
AUTO PAGE REWRITE
(58H, 59H)
(2)
INCREMENT PAGE
(2)
ADDRESS POINTER
END
Notes:
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase/program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low power applications may choose to wait until 10,000
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
16. Sector Addressing
26
PA9
PA8
PA7
PA6
PA5
PA4
PA3
PA2 - PA0
Sector
0
0
0
0
0
0
0
X
0
0
0
X
X
X
X
X
X
1
0
1
X
X
X
X
X
X
2
1
X
X
X
X
X
X
X
3
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
17. Ordering Information
17.1
Standard Package Options
fSCK
(MHz)
20
Active
10
20
17.2
ICC (mA)
10
Standby
Ordering Code
Package
Operation Range
0.01
AT45DB021B-CC
AT45DB021B-RC
AT45DB021B-SC
AT45DB021B-TC
9C1
28R
8S2
28T
Commercial
(0°C to 70°C)
0.01
AT45DB021B-CI
AT45DB021B-RI
AT45DB021B-SI
AT45DB021B-TI
9C1
28R
8S2
28T
Industrial
(-40°C to 85°C)
Green Package Options (Pb/Halide-free/RoHS Compliant)
fSCK
(MHz)
20
ICC (mA)
Active
10
Standby
0.01
Ordering Code
AT45DB021B-CU
AT45DB021B-RU
AT45DB021B-SU
AT45DB021B-TU
Package
Operation Range
9C1
28R
8S2
28T
Industrial
(-40°C to 85°C)
Package Type
9C1
9-ball (3 x 3 Array), 1.0 mm Pitch, 5 x 5 mm Plastic Chip-scale Ball Grid Array Package (CBGA)
28R
28-lead, 0.330" Wide, Plastic Gull Wing Small Outline Package (SOIC)
8S2
8-lead, 0.210" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
28T
28-lead, Plastic Thin Small Outline Package (TSOP)
27
1937J–DFLSH–9/05
18. Packaging Information
18.1
9C1 – CBGA
Dimensions in Millimeters and (Inches).
Controlling dimension: Millimeters.
5.10(0.201)
4.90(0.193)
A1 ID
5.10(0.201)
4.90(0.193)
SIDE VIEW
TOP VIEW
0.25(0.010)MIN
1.20(0.047)MAX
2.0 (0.079)
1.50(0.059) REF
3
2
1
1.50(0.059) REF
A
B
1.00 (0.0394) BSC
NON-ACCUMULATIVE
2.0 (0.079)
C
0.40 (0.016)
DIA BALL TYP
1.00 (0.0394) BSC
NON-ACCUMULATIVE
BOTTOM VIEW
04/11/01
R
28
2325 Orchard Parkway
San Jose, CA 95131
TITLE
9C1, 9-ball (3 x 3 Array), 5 x 5 x 1.2 mm Body, 1.0 mm Ball
Pitch Chip-scale Ball Grid Array Package (CBGA)
DRAWING NO.
REV.
9C1
A
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
18.2
28R – SOIC
B
E
E1
PIN 1
e
D
A
A1
COMMON DIMENSIONS
(Unit of Measure = mm)
0º ~ 8º
C
L
Note: 1. Dimensions D and E1 do not include mold Flash
or protrusion. Mold Flash or protrusion shall not exceed
0.25 mm (0.010").
SYMBOL
MIN
NOM
A
2.39
–
A1
0.050
–
0.356
D
18.00
–
18.50
E
11.70
–
12.50
E
1 8.59
–
8.79
B
0.356
–
0.508
C
0.203
–
0.305
L
0.94
–
1.27
e
MAX
NOTE
2.79
Note 1
Note 1
1.27 TYP
5/18/2004
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
28R, 28-lead, 0.330" Body Width,
Plastic Gull Wing Small Outline (SOIC)
DRAWING NO.
REV.
28R
C
29
1937J–DFLSH–9/05
18.3
8S2 – EIAJ SOIC
C
1
E
E1
L
N
Top View
∅
End View
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
A1
D
Side View
NOM
MAX
NOTE
A
1.70
2.16
A1
0.05
0.25
b
0.35
0.48
5
C
0.15
0.35
5
D
5.13
5.35
E1
5.18
5.40
E
7.70
8.26
L
0.51
0.85
∅
0°
8°
e
Notes: 1.
2.
3.
4.
5.
MIN
2, 3
1.27 BSC
4
This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs are not included.
It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
Determines the true geometric position.
Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/−0.005 mm.
10/7/03
R
30
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
DRAWING NO.
8S2
REV.
C
AT45DB021B
1937J–DFLSH–9/05
AT45DB021B
18.4
28T – TSOP
PIN 1
0º ~ 5º
c
Pin 1 Identifier Area
D1 D
L
b
e
L1
A2
E
A
GAGE PLANE
SEATING PLANE
COMMON DIMENSIONS
(Unit of Measure = mm)
A1
MIN
NOM
MAX
A
–
–
1.20
A1
0.05
–
0.15
A2
0.90
1.00
1.05
D
13.20
13.40
13.60
D1
11.70
11.80
11.90
Note 2
E
7.90
8.00
8.10
Note 2
L
0.50
0.60
0.70
SYMBOL
Notes:
1. This package conforms to JEDEC reference MO-183.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
L1
NOTE
0.25 BASIC
b
0.17
0.22
0.27
c
0.10
–
0.21
e
0.55 BASIC
12/06/02
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline
Package, Type I (TSOP)
DRAWING NO.
REV.
28T
C
31
1937J–DFLSH–9/05
Atmel Corporation
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Atmel Operations
Memory
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
ASIC/ASSP/Smart Cards
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any
intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDITIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY
WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT
OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no
representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications
and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided
otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use
as components in applications intended to support or sustain life.
© Atmel Corporation 2005. All rights reserved. Atmel ®, logo and combinations thereof, Everywhere You Are®, DataFlash ® and others, are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others.
Printed on recycled paper.
1937J–DFLSH–9/05
Similar pages