TLHG / R / Y520. VISHAY Vishay Semiconductors High Efficiency LED, ∅ 5 mm Tinted Non-Diffused Package Description The TLH.52.. series was developed for standard applications like general indicating and lighting purposes. It is housed in a 5 mm tinted non-diffused plastic package. The small viewing angle of these devices provides a high brightness. Several selection types with different luminous intensities are offered. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs are categorized additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance. Features • • • • • • • • • Choice of three bright colors Standard T-1¾ package Small mechanical tolerances Suitable for DC and high peak current Small viewing angle Luminous intensity categorized Yellow and green color categorized TLH.52.. with stand-offs Lead-free device 19223 e2 Pb Pb-free Applications Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLHR5200 Red, IV = 20 mcd (typ.) 14 ° GaAsP on GaP TLHR5201 Red, IV = 30 mcd (typ.) 14 ° GaAsP on GaP TLHR5205 Red, IV = 40 mcd (typ.) 14 ° GaAsP on GaP TLHY5200 Yellow, IV = 30 mcd (typ.) 14 ° GaAsP on GaP TLHY5201 Yellow, IV = 40 mcd (typ.) 14 ° GaAsP on GaP TLHY5205 Yellow, IV = 50 mcd (typ.) 14 ° GaAsP on GaP TLHG5200 Green, IV = 30 mcd (typ.) 14 ° GaP on GaP TLHG5201 Green, IV = 40 mcd (typ.) 14 ° GaP on GaP TLHG5205 Green, IV = 50 mcd (typ.) 14 ° GaP on GaP Document Number 83011 Rev. 1.4, 31-Aug-04 www.vishay.com 1 TLHG / R / Y520. VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLHR52.. , TLHY52.. ,TLHG52.. , Parameter Test condition Symbol Value VR 6 V IF 30 mA Reverse voltage DC Forward current Tamb ≤ 65 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 65 °C Unit IFSM 1 A PV 100 mW Tj 100 °C Operating temperature range Tamb - 20 to + 100 °C Storage temperature range Tstg - 55 to + 100 °C Tsd 260 °C RthJA 350 K/W Junction temperature Soldering temperature t ≤ 5 s, 2 mm from body Thermal resistance junction/ ambient Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLHR52.. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLHR5200 IV 10 20 mcd TLHR5201 IV 16 30 mcd TLHR5205 IV 25 40 mcd 612 Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 635 625 Angle of half intensity IF = 10 mA ϕ ± 14 Forward voltage IF = 20 mA VF 2 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 Max Unit nm nm deg 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Yellow TLHY52.. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLHY5200 IV 10 30 Max mcd Unit TLHY5201 IV 16 40 mcd TLHY5205 IV 25 50 mcd 581 Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 585 nm Angle of half intensity IF = 10 mA ϕ ± 14 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 2.4 6 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 www.vishay.com 2 594 Document Number 83011 Rev. 1.4, 31-Aug-04 TLHG / R / Y520. VISHAY Vishay Semiconductors Green TLHG52.. Parameter Luminous intensity Test condition IF = 10 mA 1) Part Symbol Min Typ. TLHG5200 IV 16 30 Max mcd Unit TLHG5201 IV 25 40 mcd TLHG5205 IV 40 50 562 mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 565 nm Angle of half intensity IF = 10 mA ϕ ± 14 deg Forward voltage IF = 20 mA VF 2.4 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 575 6 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 Tamb ≤ 85 °C IF – Forward Current ( mA ) PV - Power Dissipation ( mW ) 125 100 75 50 25 1000 20 40 60 80 0.1 100 1 10 95 10918 0.1 1 Figure 3. Forward Current vs. Pulse Length 0° I v rel - Relative Luminous Intensity I F - Forward Current ( mA ) 60 50 40 30 20 10 0 0 95 10046 20 40 60 80 Figure 2. Forward Current vs. Ambient Temperature Document Number 83011 Rev. 1.4, 31-Aug-04 10 ° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 100 Tamb − Ambient Temperature ( °C ) 100 10 tp – Pulse Length ( ms ) 95 10025 Figure 1. Power Dissipation vs. Ambient Temperature 0.2 0.5 1 0.01 100 Tamb − Ambient Temperature ( °C ) 0.02 0.05 0 0 t p /T = 0.01 0.4 0.2 0 0.2 0.4 0.6 95 10044 Figure 4. Rel. Luminous Intensity vs. Angular Displacement www.vishay.com 3 TLHG / R / Y520. VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity I F - Forward Current ( mA ) 1000 Red 100 t p /T = 0.001 t p = 10 µs 10 1 Red 1 0.1 0.01 0.1 0 2 4 6 8 I F - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current I V re l - Relative Luminous Intensity 0.8 0.4 I F = 10 mA 0 0 20 40 60 80 Red 1.0 0.8 0.6 0.4 0.2 0 590 100 Tamb - Ambient Temperature ( °C ) 95 10027 630 650 670 690 λ -ı Wavelength ( nm ) Figure 9. Relative Intensity vs. Wavelength 1000 2.4 Red I F - Forward Current ( mA ) I V re l - Relative Luminous Intensity 610 95 10040 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 2.0 1.6 1.2 0.8 0.4 Yellow 100 t p /T = 0.001 t p = 10 µs 10 1 0.1 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle www.vishay.com 4 100 1.2 Red 1.2 95 10321 10 95 10029 Figure 5. Forward Current vs. Forward Voltage 1.6 1 10 V F - Forward Voltage ( V ) 95 10026 I v rel - Relative Luminous Intensity 10 0 95 10030 2 4 6 8 10 V F - Forward Voltage ( V ) Figure 10. Forward Current vs. Forward Voltage Document Number 83011 Rev. 1.4, 31-Aug-04 TLHG / R / Y520. VISHAY 1.6 1.2 Yellow IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity Vishay Semiconductors 1.2 0.8 0.4 0 I F = 10 mA 0 20 40 60 80 0.8 0.6 0.4 0.2 0 550 100 Tamb - Ambient Temperature ( °C ) 95 10031 Yellow 1.0 I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 650 1.6 1.2 0.8 0.4 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Green 100 t p /T = 0.001 t p = 10 µs 10 1 0.1 0 Yellow 1 0.1 1.6 10 Figure 13. Relative Luminous Intensity vs. Forward Current Document Number 83011 Rev. 1.4, 31-Aug-04 8 10 Green 0.8 0.4 100 I F - Forward Current ( mA ) 6 1.2 0 0.01 1 4 Figure 15. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10 2 V F - Forward Voltage ( V ) 95 10034 Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle I v rel - Relative Luminous Intensity 630 1000 Yellow 2.0 95 10033 610 Figure 14. Relative Intensity vs. Wavelength 2.4 95 10260 590 λ - Wavelength ( nm ) 95 10039 Figure 11. Rel. Luminous Intensity vs. Ambient Temperature 0 570 95 10035 I F = 10 mA 0 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) Figure 16. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 5 TLHG / R / Y520. VISHAY Vishay Semiconductors I v rel - Specific Luminous Intensity 2.4 Green 2.0 1.6 1.2 0.8 0.4 0 95 10263 10 1 20 0.5 50 0.2 100 0.1 500 IF(mA) 0.02 tp/T 200 0.05 I v rel - Relative Luminous Intensity Figure 17. Specific Luminous Intensity vs. Forward Current 10 Green 1 0.1 1 10 100 I F - Forward Current ( mA ) 95 10037 Figure 18. Relative Luminous Intensity vs. Forward Current IVrel - Relative Luminous Intensity 1.2 Green 1.0 0.8 0.6 0.4 0.2 0 520 540 560 580 600 620 λ - Wavelength ( nm ) 95 10038 Figure 19. Relative Intensity vs. Wavelength www.vishay.com 6 Document Number 83011 Rev. 1.4, 31-Aug-04 VISHAY TLHG / R / Y520. Vishay Semiconductors Package Dimensions in mm 95 11260 Document Number 83011 Rev. 1.4, 31-Aug-04 www.vishay.com 7 TLHG / R / Y520. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83011 Rev. 1.4, 31-Aug-04