ATA2536T Low-voltage IR Receiver ASSP DATASHEET Features ● Highly integrated device with no external components except PIN diode ● Supply-voltage range: 2.7V to 5.5V ● High sensitivity due to automatic sensitivity adaptation (AGC) and automatic strong signal adaptation (ATC) ● Automatic supply voltage adaptation ● High immunity against disturbances from daylight and lamps ● Small size and innovative pad layout ● Available for carrier frequencies between 36kHz to 40kHz ● TTL and CMOS compatible Applications ● Home entertainment applications ● Home appliances ● Remote control equipment 9226C-AUTO-05/14 1. Description The Atmel® IC ATA2536T is a complete IR receiver for data communication developed and optimized for use in carrierfrequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver modules. The Atmel ATA2536T is recommended in LCD TV application (noise environment by backlight interference) with IR protocols using 375µs maximum burst length of data bits, available with standard frequencies (36, 37, 38, 40kHz) and 3 different noise suppression regulation types (standard, lamp, short burst). The ATA2536T operates in a supply voltage range of 2.7V to 5.5V. The function of the Atmel ATA2536T can be described using the block diagram of Figure 1-1 on page 2. The input stage has two main functions. Firstly, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit, which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0, which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit, which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. Figure 1-1. Block Diagram VS IN Input Oscillator CGA and Filter Demodulator AGC/ATC and Digital Control Carrier Frequency f0 ATA2536T Modulated IR Signal min 6 or 10 Pulses GND 2 ATA2536T [DATASHEET] 9226C–AUTO–05/14 OUT Microcontroller 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Supply voltage Supply current Symbol Value Unit VS –0.3 to +6 V IS 3 mA Input voltage VIN –0.3 to VS V Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V Output current IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW ATA2536T [DATASHEET] 9226C–AUTO–05/14 3 3. Electrical Characteristics, 3-V Operation Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. 1 Parameters 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions Symbol Min. Typ. Max. Unit Type* VS 2.7 3.0 3.3 V C IS 0.45 0.6 0.85 mA B k A 250 mV B VS V B mA B V B Supply IIN = 0 Output 2.1 Internal pull-up resistor Tamb = 25°C RPU 2.2 Output voltage low R2 = 1.4k VOL 2.3 Output voltage high 2.4 Output current clamping 3 VOH R2 = 0 40 VS – 0.25 IOCL 8 Input 3.1 Input DC current IIN = –150µA, VS = 2.7V measure VIN IIN_DCMAX 3.2 Input DC current VIN = 0; VS = 3V Tamb = 25°C IIN_DCMAX –350 µA C 3.3 Minimum detection threshold current IEemin –850 pA B 3.4 Minimum detection threshold current with AC current disturbance IIN_AC100 = 3 µA at 100 Hz IEemin –1300 pA C µA D 3.5 4 Maximum detection threshold current with VIN > 0V Test signal: VS = 3V Tamb= 25°C, IIN_DC=1µA square pp burst N = 16 f = f0; tPER = 10ms BER = 50(1) Test signal: VS = 3V, Tamb = 25°C IIN_DC = 1µA square pp burst N = 16 f = f0; tPER = 10ms BER = 5%(1) IEemax 0 –200 Controlled Amplifier and Filter 4.1 Maximum value of variable VS = 3V, Tamb = 25°C gain (CGA) GVARMAX 50 dB D 4.2 Minimum value of variable VS = 3V, Tamb = 25°C gain (CGA) GVARMIN –6 dB D 4.3 Total internal amplification(2) VS = 3V, Tamb = 25°C GMAX 72 dB D 4.4 Center frequency fusing accuracy of bandpass VS = 3V, Tamb = 25°C 0.5% accuracy f03V_FUSE –2.5 f0 +2.5 % A 4.5 Overall accuracy center frequency of bandpass f03V –6.5 f0 +3.5 % C 4.6 Overall accuracy center frequency of bandpass Tamb = 0 to 70°C f03V –5.5 f0 +3.0 % C 4.7 BPF bandwidth –3dB; f0 = 38kHz B kHz C 4.5 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4 ATA2536T [DATASHEET] 9226C–AUTO–05/14 4. Electrical Characteristics, 5-V Operation Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 5 Parameters 5.1 Supply-voltage range 5.2 Supply current 6 Test Conditions Symbol Min. Typ. IIN =0 VS 4.5 5.0 IS 0.5 0.7 Unit Type* 5.5 V C 0.95 mA B 250 k C mV C VS V C mA C V B Output 6.1 Internal pull-up resistor Tamb = 25°C RPU 6.2 Output voltage low R2 = 2.4k VOL 6.3 Output voltage high 6.4 Output current clamping 7 Max. Supply VOH R2 = 0 40 VS – 0.25 IOCL 8 Input 7.1 Input DC current IIN = –370µA, VS = 4.5V measure VIN IIN_DCMAX 7.2 Input DC-current VIN = 0; VS = 5V Tamb = 25°C IIN_DCMAX –700 µA C 7.3 Min. detection threshold current IEemin –1000 pA B 7.4 Min. detection threshold current with AC current disturbance IIN_AC100 = 3µA at 100Hz IEemin –2000 pA C µA D 7.5 8 Max. detection threshold current with VIN > 0V Test signal: VS = 5V Tamb = 25°C IIN_DC = 1µA square pp burst N = 16 f = f0; tPER = 10ms BER = 50(1) Test signal: VS = 5V, Tamb = 25°C IIN_DC = 1µA square pp burst N = 16 f = f0; tPER = 10ms BER = 5%(1) IEemax 0 –500 Controlled Amplifier and Filter 8.1 Maximum value of variable VS = 5V, Tamb = 25°C gain (CGA) GVARMAX 50 dB D 8.2 Minimum value of variable VS = 5V, Tamb = 25°C gain (CGA) GVARMIN –6 dB D 8.3 Total internal amplification(2) GMAX 72 dB D 8.4 Resulting center frequency f0 fused at VS = 3V fusing accuracy VS = 5V, Tamb = 25°C f05V f03V-FUSE – 0.5 kHz C VS = 5V, Tamb = 25°C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4.1 ESD 2000V HBM; ESD STM5.1-2007, JESD22-A114F 2008, AEC-Q100-002-Ref-D 750V CDM; ESD STM.5.3.1-1999 4.2 Reliability Electrical qualification (1000h at 150°C) in molded SO8 plastic package. ATA2536T [DATASHEET] 9226C–AUTO–05/14 5 5. Typical Electrical Curves at Tamb = 25°C Figure 5-1. IEemin versus IIN_DC, VS = 3V 100 IEemin (nA) VS = 3V f = fo 10 1 0.1 0.1 1 10 100 1000 100 1000 IIN_DC (µA) Figure 5-2. IEemin versus IIN_DC, VS = 5V 100 IEemin (nA) VS = 5V f = fo 10 1 0.1 0.1 1 10 IIN_DC (µA) Figure 5-3. VIN versus IIN_DC, VS = 3V 4.0 3.5 3.0 VS = 3V f = fo VIN (V) 2.5 2.0 1.5 1.0 0.5 0 0.1 1 10 IIN_DC (µA) 6 ATA2536T [DATASHEET] 9226C–AUTO–05/14 100 1000 Figure 5-4. VIN versus IIN_DC, VS = 5V 4.0 3.5 VS = 5V f = fo VIN (V) 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1 10 100 1000 IIN_DC (µA) Figure 5-5. Data Transmission Rate, VS = 3V 4000 3500 Bits (s) 3000 2500 Short burst type 2000 1500 Standard type 1000 Lamp type 500 0 30 35 40 45 50 55 60 55 60 fo (kHz) Figure 5-6. Data Transmission Rate, VS = 5V 4000 3500 Bits (s) 3000 2500 Short burst type 2000 Standard type 1500 1000 Lamp type 500 0 30 35 40 45 50 fo (kHz) ATA2536T [DATASHEET] 9226C–AUTO–05/14 7 Figure 5-7. Typical Bandpass Curve Standard and Lamp Type 1.2 VS = 3.3V Relative Amplitude 1.0 0.8 Bandwidth (-3dB) 0.6 0.4 0.2 0 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.10 1.15 1.20 f/fo Q = (f/fo) /B; B -> –3dB values Example: Q = 1/(1.06 – 0.94) = 8.3 Figure 5-8. Typical Bandpass Curve Short Burst Type 1.2 VS = 3.3V Relative Amplitude 1.0 0.8 Bandwidth (-3dB) 0.6 0.4 0.2 0 0.80 0.85 0.90 0.95 1.00 f/fo Q = (f/fo) /B; B -> –3dB values Example: Q = 1/(1.08 – 0.93) = 6.7 8 ATA2536T [DATASHEET] 9226C–AUTO–05/14 1.05 Figure 5-9. Illustration of Used Terms, Example: f = 38kHz, burst with 16 pulses, 16 periods Period (P = 16) tPER = 842µs Burst (N = 16 pulses) tB = 421µs tGAP > tDON + tDOFF IN 1 7 16 7 7 33µs (f0 = 38kHz) OUT tDON tDOFF 421µs Envelope 1 Envelope 16 13472µs OUT Telegram Pause Data Word Data Word t 14ms TREF = 62ms Figure 5-10. Test Circuit IEe = ΔU1/400kΩ ΔU1 1nF VDD = 3V to 5V 400kΩ R 1 = 220Ω IIN_DC VS IIN IEe IIN_AC100 20kΩ IN 1nF VPULSE GND ΔU2 IIN_DC = ΔU2/40kΩ 20kΩ f0 ATA2536T OUT C1 + 4.7µF 16 DC + tPER = 10ms ATA2536T [DATASHEET] 9226C–AUTO–05/14 9 Figure 5-11. Application Circuit VDD = 3V to 5V R 2(1) > 2.4kΩ R 1 = 220Ω RPU IS VS IOCL IN ATA2536T IIN Microcontroller OUT GND + IIN_DC IEe C1 4.7µF VIN VO C2(2) = 470pF (10nF) (1) Optional (2) The value of C2 is dimensioned for the short burst type ATA2536T7xx. For the other types C 2 can be omitted. In case of an optional resistor R 2 > 2.4kΩ the value of C 2 must be increased to C 2 = 10nF. For the other types C 2 = 470pF is sufficient. 10 ATA2536T [DATASHEET] 9226C–AUTO–05/14 6. Ordering Information Delivery: unsawn wafers (DDW) in box D(2) Extended Type Number Type ATA2536T1xx(1)-DDW 2175 Standard type: ≥ 10 pulses, high data rate ATA2536T3xx(1)-DDW 1400 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission ATA2536T7xx(1)-DDW 3415 Short burst type: ≥ 6 pulses, highest data rate Notes: 1. xx means carrier frequency value (36, 37, 38 or 40kHz typical), frequency value 33kHz and 56kHz on request 2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V 6.1 Pad Layout and Dimensions Figure 6-1. Pad Layout Zapping Versioning 750µ GND = 297µ; 554µ IN = 588µ; 568µ OUT = 189µ; 334µ VS = 66µ; 63µ ATA2536T Pad Layout 0,0 840µ Note: The pad coordinates are given for the centre of the pad, values in µm from the origin (0;0) Dimensions Pad metallurgy Finish Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads Material Thickness Material Thickness 0.75mm 0.84mm 290µm ±5% 80µm diameter 60µm diameter AlSiCu 1.0µm PSG + Si3N4 1.0µm ATA2536T [DATASHEET] 9226C–AUTO–05/14 11 Table 6-1. 12 Pin Description SYMBOL FUNCTION OUT Data output VS Supply voltage GND GND IN Input pin diode Zapping f0 adjust Versioning Type adjust ATA2536T [DATASHEET] 9226C–AUTO–05/14 7. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 9226C-AUTO-05/14 Put datasheet in the latest template 9226B-AUTO-09/11 Figure 5-11 “Application Circuit” on page 11 updated ATA2536T [DATASHEET] 9226C–AUTO–05/14 13 XXXXXX Atmel Corporation 1600 Technology Drive, San Jose, CA 95110 USA T: (+1)(408) 441.0311 F: (+1)(408) 436.4200 | www.atmel.com © 2014 Atmel Corporation. / Rev.: 9226C–AUTO–05/14 Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation in U.S. and other countries. Other terms and product names may be trademarks of others. DISCLAIMER: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. 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