ATA2536T - Complete

ATA2536T
Low-voltage IR Receiver ASSP
DATASHEET
Features
● Highly integrated device with no external components except PIN diode
● Supply-voltage range: 2.7V to 5.5V
● High sensitivity due to automatic sensitivity adaptation (AGC) and automatic strong
signal adaptation (ATC)
● Automatic supply voltage adaptation
● High immunity against disturbances from daylight and lamps
● Small size and innovative pad layout
● Available for carrier frequencies between 36kHz to 40kHz
● TTL and CMOS compatible
Applications
● Home entertainment applications
● Home appliances
● Remote control equipment
9226C-AUTO-05/14
1.
Description
The Atmel® IC ATA2536T is a complete IR receiver for data communication developed and optimized for use in carrierfrequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression
of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver
modules. The Atmel ATA2536T is recommended in LCD TV application (noise environment by backlight interference) with
IR protocols using 375µs maximum burst length of data bits, available with standard frequencies (36, 37, 38, 40kHz) and 3
different noise suppression regulation types (standard, lamp, short burst). The ATA2536T operates in a supply voltage range
of 2.7V to 5.5V.
The function of the Atmel ATA2536T can be described using the block diagram of Figure 1-1 on page 2. The input stage has
two main functions. Firstly, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals
are transformed into a voltage by a special circuit, which is optimized for low noise applications. After amplification by a
Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency
f0, which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst
signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be
suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit, which varies the gain as a
function of the present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to
adapt to the current application to secure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
Input
Oscillator
CGA and
Filter
Demodulator
AGC/ATC and Digital Control
Carrier Frequency f0
ATA2536T
Modulated IR Signal
min 6 or 10 Pulses
GND
2
ATA2536T [DATASHEET]
9226C–AUTO–05/14
OUT
Microcontroller
2.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Supply voltage
Supply current
Symbol
Value
Unit
VS
–0.3 to +6
V
IS
3
mA
Input voltage
VIN
–0.3 to VS
V
Input DC current at VS = 5V
IIN
0.75
mA
Output voltage
VO
–0.3 to VS
V
Output current
IO
10
mA
Operating temperature
Tamb
–25 to +85
°C
Storage temperature
Tstg
–40 to +125
°C
Power dissipation at Tamb = 25°C
Ptot
30
mW
ATA2536T [DATASHEET]
9226C–AUTO–05/14
3
3.
Electrical Characteristics, 3-V Operation
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No.
1
Parameters
1.1
Supply-voltage range
1.2
Supply current
2
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
VS
2.7
3.0
3.3
V
C
IS
0.45
0.6
0.85
mA
B
k
A
250
mV
B
VS
V
B
mA
B
V
B
Supply
IIN = 0
Output
2.1
Internal pull-up resistor
Tamb = 25°C
RPU
2.2
Output voltage low
R2 = 1.4k
VOL
2.3
Output voltage high
2.4
Output current clamping
3
VOH
R2 = 0
40
VS – 0.25
IOCL
8
Input
3.1
Input DC current
IIN = –150µA, VS = 2.7V
measure VIN
IIN_DCMAX
3.2
Input DC current
VIN = 0; VS = 3V
Tamb = 25°C
IIN_DCMAX
–350
µA
C
3.3
Minimum detection
threshold current
IEemin
–850
pA
B
3.4
Minimum detection
threshold current with AC
current disturbance
IIN_AC100 =
3 µA at 100 Hz
IEemin
–1300
pA
C
µA
D
3.5
4
Maximum detection
threshold current with
VIN > 0V
Test signal:
VS = 3V
Tamb= 25°C, IIN_DC=1µA
square pp
burst N = 16
f = f0; tPER = 10ms
BER = 50(1)
Test signal:
VS = 3V, Tamb = 25°C
IIN_DC = 1µA
square pp
burst N = 16
f = f0; tPER = 10ms
BER = 5%(1)
IEemax
0
–200
Controlled Amplifier and Filter
4.1
Maximum value of variable
VS = 3V, Tamb = 25°C
gain (CGA)
GVARMAX
50
dB
D
4.2
Minimum value of variable
VS = 3V, Tamb = 25°C
gain (CGA)
GVARMIN
–6
dB
D
4.3
Total internal
amplification(2)
VS = 3V, Tamb = 25°C
GMAX
72
dB
D
4.4
Center frequency fusing
accuracy of bandpass
VS = 3V, Tamb = 25°C
0.5% accuracy
f03V_FUSE
–2.5
f0
+2.5
%
A
4.5
Overall accuracy center
frequency of bandpass
f03V
–6.5
f0
+3.5
%
C
4.6
Overall accuracy center
frequency of bandpass
Tamb = 0 to 70°C
f03V
–5.5
f0
+3.0
%
C
4.7
BPF bandwidth
–3dB; f0 = 38kHz
B
kHz
C
4.5
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2536T [DATASHEET]
9226C–AUTO–05/14
4.
Electrical Characteristics, 5-V Operation
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No.
5
Parameters
5.1
Supply-voltage range
5.2
Supply current
6
Test Conditions
Symbol
Min.
Typ.
IIN =0
VS
4.5
5.0
IS
0.5
0.7
Unit
Type*
5.5
V
C
0.95
mA
B
250
k
C
mV
C
VS
V
C
mA
C
V
B
Output
6.1
Internal pull-up resistor
Tamb = 25°C
RPU
6.2
Output voltage low
R2 = 2.4k
VOL
6.3
Output voltage high
6.4
Output current clamping
7
Max.
Supply
VOH
R2 = 0
40
VS – 0.25
IOCL
8
Input
7.1
Input DC current
IIN = –370µA, VS = 4.5V
measure VIN
IIN_DCMAX
7.2
Input DC-current
VIN = 0; VS = 5V
Tamb = 25°C
IIN_DCMAX
–700
µA
C
7.3
Min. detection threshold
current
IEemin
–1000
pA
B
7.4
Min. detection threshold
current with AC current
disturbance
IIN_AC100 = 3µA at
100Hz
IEemin
–2000
pA
C
µA
D
7.5
8
Max. detection threshold
current with VIN > 0V
Test signal:
VS = 5V
Tamb = 25°C
IIN_DC = 1µA
square pp
burst N = 16
f = f0; tPER = 10ms
BER = 50(1)
Test signal:
VS = 5V, Tamb = 25°C
IIN_DC = 1µA
square pp
burst N = 16
f = f0; tPER = 10ms
BER = 5%(1)
IEemax
0
–500
Controlled Amplifier and Filter
8.1
Maximum value of variable
VS = 5V, Tamb = 25°C
gain (CGA)
GVARMAX
50
dB
D
8.2
Minimum value of variable
VS = 5V, Tamb = 25°C
gain (CGA)
GVARMIN
–6
dB
D
8.3
Total internal
amplification(2)
GMAX
72
dB
D
8.4
Resulting center frequency f0 fused at VS = 3V
fusing accuracy
VS = 5V, Tamb = 25°C
f05V
f03V-FUSE –
0.5
kHz
C
VS = 5V, Tamb = 25°C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4.1
ESD
2000V HBM; ESD STM5.1-2007, JESD22-A114F 2008, AEC-Q100-002-Ref-D 750V CDM;
ESD STM.5.3.1-1999
4.2
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package.
ATA2536T [DATASHEET]
9226C–AUTO–05/14
5
5.
Typical Electrical Curves at Tamb = 25°C
Figure 5-1. IEemin versus IIN_DC, VS = 3V
100
IEemin (nA)
VS = 3V
f = fo
10
1
0.1
0.1
1
10
100
1000
100
1000
IIN_DC (µA)
Figure 5-2. IEemin versus IIN_DC, VS = 5V
100
IEemin (nA)
VS = 5V
f = fo
10
1
0.1
0.1
1
10
IIN_DC (µA)
Figure 5-3. VIN versus IIN_DC, VS = 3V
4.0
3.5
3.0
VS = 3V
f = fo
VIN (V)
2.5
2.0
1.5
1.0
0.5
0
0.1
1
10
IIN_DC (µA)
6
ATA2536T [DATASHEET]
9226C–AUTO–05/14
100
1000
Figure 5-4. VIN versus IIN_DC, VS = 5V
4.0
3.5
VS = 5V
f = fo
VIN (V)
3.0
2.5
2.0
1.5
1.0
0.5
0
0.1
1
10
100
1000
IIN_DC (µA)
Figure 5-5. Data Transmission Rate, VS = 3V
4000
3500
Bits (s)
3000
2500
Short burst type
2000
1500
Standard type
1000
Lamp type
500
0
30
35
40
45
50
55
60
55
60
fo (kHz)
Figure 5-6. Data Transmission Rate, VS = 5V
4000
3500
Bits (s)
3000
2500
Short burst type
2000
Standard type
1500
1000
Lamp type
500
0
30
35
40
45
50
fo (kHz)
ATA2536T [DATASHEET]
9226C–AUTO–05/14
7
Figure 5-7. Typical Bandpass Curve Standard and Lamp Type
1.2
VS = 3.3V
Relative Amplitude
1.0
0.8
Bandwidth (-3dB)
0.6
0.4
0.2
0
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.10
1.15
1.20
f/fo
Q = (f/fo) /B; B -> –3dB values
Example: Q = 1/(1.06 – 0.94) = 8.3
Figure 5-8. Typical Bandpass Curve Short Burst Type
1.2
VS = 3.3V
Relative Amplitude
1.0
0.8
Bandwidth (-3dB)
0.6
0.4
0.2
0
0.80
0.85
0.90
0.95
1.00
f/fo
Q = (f/fo) /B; B -> –3dB values
Example: Q = 1/(1.08 – 0.93) = 6.7
8
ATA2536T [DATASHEET]
9226C–AUTO–05/14
1.05
Figure 5-9. Illustration of Used Terms, Example: f = 38kHz, burst with 16 pulses, 16 periods
Period (P = 16)
tPER = 842µs
Burst (N = 16 pulses)
tB = 421µs
tGAP > tDON + tDOFF
IN
1
7
16
7
7
33µs (f0 = 38kHz)
OUT
tDON
tDOFF
421µs
Envelope 1
Envelope 16
13472µs
OUT
Telegram Pause
Data Word
Data Word
t
14ms
TREF = 62ms
Figure 5-10. Test Circuit
IEe = ΔU1/400kΩ
ΔU1
1nF
VDD = 3V to 5V
400kΩ
R 1 = 220Ω
IIN_DC
VS
IIN
IEe
IIN_AC100
20kΩ
IN
1nF
VPULSE
GND
ΔU2
IIN_DC = ΔU2/40kΩ
20kΩ
f0
ATA2536T OUT
C1
+
4.7µF
16
DC
+
tPER = 10ms
ATA2536T [DATASHEET]
9226C–AUTO–05/14
9
Figure 5-11. Application Circuit
VDD = 3V to 5V
R 2(1) > 2.4kΩ
R 1 = 220Ω
RPU
IS
VS
IOCL
IN
ATA2536T
IIN
Microcontroller
OUT
GND
+
IIN_DC
IEe
C1
4.7µF
VIN
VO
C2(2) = 470pF
(10nF)
(1)
Optional
(2)
The value of C2 is dimensioned for the short burst type ATA2536T7xx. For the other types C 2 can be omitted.
In case of an optional resistor R 2 > 2.4kΩ the value of C 2 must be increased to C 2 = 10nF. For the other types
C 2 = 470pF is sufficient.
10
ATA2536T [DATASHEET]
9226C–AUTO–05/14
6.
Ordering Information
Delivery: unsawn wafers (DDW) in box
D(2)
Extended Type Number
Type
ATA2536T1xx(1)-DDW
2175
Standard type: ≥ 10 pulses, high data rate
ATA2536T3xx(1)-DDW
1400
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data
transmission
ATA2536T7xx(1)-DDW
3415
Short burst type: ≥ 6 pulses, highest data rate
Notes:
1. xx means carrier frequency value (36, 37, 38 or 40kHz typical), frequency value 33kHz and 56kHz on request
2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V
6.1
Pad Layout and Dimensions
Figure 6-1. Pad Layout
Zapping
Versioning
750µ
GND = 297µ; 554µ
IN = 588µ; 568µ
OUT = 189µ; 334µ
VS = 66µ; 63µ
ATA2536T
Pad Layout
0,0
840µ
Note: The pad coordinates are given for the centre of the pad, values in µm from the origin (0;0)
Dimensions
Pad metallurgy
Finish
Length inclusive scribe
Width inclusive scribe
Thickness
Pads
Fusing pads
Material
Thickness
Material
Thickness
0.75mm
0.84mm
290µm ±5%
80µm diameter
60µm diameter
AlSiCu
1.0µm
PSG + Si3N4
1.0µm
ATA2536T [DATASHEET]
9226C–AUTO–05/14
11
Table 6-1.
12
Pin Description
SYMBOL
FUNCTION
OUT
Data output
VS
Supply voltage
GND
GND
IN
Input pin diode
Zapping
f0 adjust
Versioning
Type adjust
ATA2536T [DATASHEET]
9226C–AUTO–05/14
7.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
9226C-AUTO-05/14
Put datasheet in the latest template
9226B-AUTO-09/11
Figure 5-11 “Application Circuit” on page 11 updated
ATA2536T [DATASHEET]
9226C–AUTO–05/14
13
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