Si4812DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 1.4 D SO-8 S S S G 8 D 2 7 D 3 6 D 5 D 1 4 Ordering Information: Si4812DY Si4812DY-T1 (with Tape and Reel) Si4812DY—E3 (Lead (Pb)-Free) Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) Schottky Diode G N-Channel MOSFET Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Limit Parameter Symbol Drain-Source Voltage (MOSFET) Gate-Source Voltage (MOSFET) TA = 70_C Pulsed Drain Current (MOSFET) Average Foward Current (Schottky) Pulsed Foward Current (Schottky) a b Maximum Power Dissipation (Schottky)a, ID V 9 6.9 7.5 5.6 50 IS 2.1 IF 1.4 IFM 1.2 0.8 2.5 1.4 TA = 70_C 1.6 0.9 2.0 1.2 1.3 0.8 PD TA = 70_C Operating Junction and Storage Temperature Range A 30 TA = 25_C TA = 25_C Unit "20 IDM Continuous Source Current (MOSFET Diode Conduction)a, b a b Maximum Power Dissipation (MOSFET)a, 30 VGS TA = 25_C Steady State 30 VDS Reverse Voltage (Schottky) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 10 sec TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi t (t v 10 sec))a Maximum Junction-to-Ambient Junction to Ambient (t = steady state)a Device Typical Maximum MOSFET 40 50 Schottky 50 60 72 90 85 100 MOSFET Symbol RthJA Schottky Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71775 S-41426—Rev. G, 26-Jul-04 www.vishay.com 1 Si4812DY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1 Typ Max Unit 3 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current (MOSFET + Schottky) IDSS On-State Drain Currenta ID(on) VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V 0.004 0.100 VDS = 30 V, VGS = 0 V, TJ = 100_C 0.7 10 3.0 20 VGS = 10 V, ID = 9 A 0.012 0.018 VGS = 4.5 V, ID = 7.3 A 0.019 0.028 VDS = 30 V, VGS = 0 V, TJ = 125_C Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea rDS(on) gfs VSD VDS w 5 V, VGS = 10 V 20 mA A VDS = 15 V, ID = 9 A 23 IS = 1.0 A, VGS = 0 V 0.45 0.50 IS = 1.0 A, VGS = 0 V, TJ = 125_C 0.33 0.42 13 24 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 5 V, ID = 9 A Rg td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 0.2 td(on) tr 4 5.7 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W IF = 1.0 A, di/dt = 100 A/ms 2.4 16 25 10 20 35 50 13 20 35 70 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71775 S-41426—Rev. G, 26-Jul-04 Si4812DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 Transfer Characteristics 50 VGS = 10 thru 5 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 4V 30 20 10 30 20 TC = 125_C 10 3V 25_C 0 0 1 2 3 4 5 0 1 VDS − Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 4 5 Capacitance 1800 1500 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 3 VGS − Gate-to-Source Voltage (V) 0.10 0.06 0.04 VGS = 4.5 V 0.02 Ciss 1200 900 Coss 600 Crss VGS = 10 V 300 0.00 0 0 10 20 30 40 50 0 5 Gate Charge 10 1.6 VDS = 15 V ID = 9 A 1.4 rDS(on) − On-Resiistance (Normalized) 8 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) −55_C 0 6 4 2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9 A 1.2 1.0 0.8 0 0 5 10 15 Qg − Total Gate Charge (nC) Document Number: 71775 S-41426—Rev. G, 26-Jul-04 20 25 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si4812DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 I S − Source Current (A) TJ = 25_C 1 0.08 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 0.1 On-Resistance vs. Gate-to-Source Voltage 0.10 ID = 9.0 A 0.06 0.04 0.02 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD − Source-to-Drain Voltage (V) 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Reverse Current (Schottky) Single Pulse Power (MOSFET) 50 20 40 1 30 V Power (W) I R − Reverse Current (mA) 10 0.1 10 V 0.01 0.001 0.0001 30 20 10 20 V 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ − Junction Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 72_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71775 S-41426—Rev. G, 26-Jul-04 Si4812DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 10−4 10−3 4. Surface Mounted 10−2 10−1 1 10 30 Square Wave Pulse Duration (sec) Document Number: 71775 S-41426—Rev. G, 26-Jul-04 www.vishay.com 5