ATA6662C LIN Transceiver DATASHEET Features ● Operating range from 5V to 27V ● Baud rate up to 20Kbaud ● Improved slew rate control according to LIN specification 2.0, 2.1 and SAEJ2602-2 ● Fully compatible with 3.3V and 5V devices ● Dominant time-out function at transmit data (TXD) ● Normal and Sleep Mode ● Wake-up capability via LIN Bus (90µs dominant) ● External wake-up via WAKE pin (35µs low level) ● Control of external voltage regulator via INH pin ● Very low standby current during sleep mode (10µA) ● Wake-up source recognition ● Bus pin short-circuit protected versus GND and battery ● LIN input current < 2µA if VBAT is disconnected ● Overtemperature protection ● High EMC level ● Interference and damage protection according to ISO/CD 7637 ● Fulfills the OEM “Hardware Requirements for LIN in Automotive Applications Rev.1.0” 4916S-AUTO-09/14 1. Description The Atmel® ATA6662C is a fully integrated LIN transceiver complying with the LIN specification 2.0, 2.1 and SAEJ2602-2. It interfaces the LIN protocol handler and the physical layer. The device is designed to handle the low-speed data communication in vehicles, for example, in convenience electronics. Improved slope control at the LIN driver ensures secure data communication up to 20Kbaud. Sleep Mode guarantees minimal current consumption. The Atmel ATA6662C has advanced EMI and ESD performance. Figure 1-1. Block Diagram RXD 7 VS 6 LIN 5 GND Receiver 1 + Filter Wake up bus timer TXD 4 TXD Time-Out timer Short circuit and overtemperature protection Slew rate control VS VS Control unit WAKE 3 Wake-up timer Standby mode 2 EN 2 ATA6662C [DATASHEET] 4916S–AUTO–09/14 8 INH 2. Pin Configuration Figure 2-1. Pinning SO8 RXD EN WAKE TXD Table 2-1. 1 2 3 4 8 7 6 5 INH VS LIN GND Pin Description Pin Symbol 1 RXD Function Receive data output (open drain) 2 EN Enables Normal Mode; when the input is open or low, the device is in Sleep Mode 3 WAKE High voltage input for local wake-up request. If not needed, connect directly to VS 4 TXD Transmit data input; active low output (strong pull-down) after a local wake-up request 5 GND Ground, heat sink 6 LIN LIN bus line input/output 7 VS Battery supply 8 INH Battery-related inhibit output for controlling an external voltage regulator; active high after a wake-up request ATA6662C [DATASHEET] 4916S–AUTO–09/14 3 3. Functional Description 3.1 Physical Layer Compatibility Since the LIN physical layer is independent from higher LIN layers (e.g., the LIN protocol layer), all nodes with a LIN physical layer according to revision 2.x can be mixed with LIN physical layer nodes, which, according to older versions (i.e., LIN 1.0, LIN 1.1, LIN 1.2, LIN 1.3), are without any restrictions. 3.2 Supply Pin (VS) Undervoltage detection is implemented to disable transmission if VS falls to a value below 5V in order to avoid false bus messages. After switching on VS, the IC switches to Fail-safe Mode and INHIBIT is switched on. The supply current in Sleep Mode is typically 10µA. 3.3 Ground Pin (GND) The Atmel® ATA6662C does not affect the LIN Bus in the case of a GND disconnection. It is able to handle a ground shift up to 11.5% of VS. 3.4 Bus Pin (LIN) A low-side driver with internal current limitation and thermal shutdown and an internal pull-up resistor are implemented as specified for LIN 2.x. The voltage range is from –27V to +40V. This pin exhibits no reverse current from the LIN bus to VS, even in the case of a GND shift or VBatt disconnection. The LIN receiver thresholds are compatible to the LIN protocol specification.The fall time (from recessive to dominant) and the rise time (from dominant to recessive) are slope controlled. The output has a self-adapting short circuit limitation; that is, during current limitation, as the chip temperature increases, the current is reduced. 3.5 Input/Output Pin (TXD) In Normal Mode the TXD pin is the microcontroller interface to control the state of the Lin output. TXD must be at Low- level in order to have a low LIN Bus. If TXD is high, the LIN output transistor is turned off and the Bus is in recessive state. The TXD pin is compatible to both a 3.3V or 5V supply. During fail-safe Mode, this pin is used as output and is signalling the wake-up source (see Section 3.14 “Wake-up Source Recognition” on page 7). It is current limited to < 8mA. 3.6 TXD Dominant Time-out Function The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from being driven permanently in dominant state. If TXD is forced to low longer than tDOM > 6ms, the pin LIN will be switched off (Recessive Mode). To reset this mode, switch TXD to high (> 10µs) before switching LIN to dominant again. 3.7 Output Pin (RXD) This pin reports to the microcontroller the state of the LIN bus. LIN high (recessive) is reported by a high level at RXD, LIN low (dominant) is reported by a low voltage at RXD. The output is an open drain, therefore, it is compatible to a 3.3V or 5V power supply. The AC characteristics are defined with a pull-up resistor of 5k to 5V and a load capacitor of 20pF. The output is short-protected. In Unpowered Mode (VS = 0V), RXD is switched off. For ESD protection a Zener diode is integrated, with VZ = 6.1V. 3.8 Enable Input Pin (EN) This pin controls the Operation Mode of the interface. If EN = 1, the interface is in Normal Mode, with the transmission path from TXD to LIN and from LIN to RXD both active. At a falling edge on EN, while TXD is already set to high, the device is switched to Sleep Mode and no transmission is possible. In Sleep Mode, the LIN bus pin is connected to VS with a weak pullup current source. The device can transmit only after being woken up (see Section 3.9 “Inhibit Output Pin (INH)” on page 5). During Sleep Mode the device is still supplied from the battery voltage. The supply current is typically 10µA. The pin EN provides a pull-down resistor in order to force the transceiver into Sleep Mode in case the pin is disconnected. 4 ATA6662C [DATASHEET] 4916S–AUTO–09/14 3.9 Inhibit Output Pin (INH) This pin is used to control an external switchable voltage regulator having a wake-up input. The inhibit pin provides an internal switch towards pin VS. If the device is in Normal Mode, the inhibit high-side switch is turned on and the external voltage regulator is activated. When the device is in Sleep Mode, the inhibit switch is turned off and disables the voltage regulator. A wake-up event on the LIN bus or at pin WAKE will switch the INH pin to the VS level. After a system power-up (VS rises from zero), the pin INH switches automatically to the VS level. 3.10 Wake-up Input Pin (WAKE) This pin is a high-voltage input used to wake the device up from Sleep Mode. It is usually connected to an external switch in the application to generate a local wake-up. A pull-up current source with typically –10µA is implemented. The voltage threshold for a wake-up signal is 3V below the VS voltage with an output current of typically –3µA. If you do not need a local wake-up in your application, connect pin WAKE directly to pin VS. 3.11 Operation Modes 1. Normal Mode This is the normal transmitting and Receiving Mode. All features are available. 2. Sleep Mode In this mode the transmission path is disabled and the device is in low power mode. Supply current from VBatt is typically 10µA. A wake-up signal from the LIN bus or via pin WAKE will be detected and will switch the device to Fail-safe Mode. If EN then switches to high, Normal Mode is activated. Input debounce timers at pin WAKE (tWAKE), LIN (tBUS) and EN (tsleep,tnom) prevent unwanted wake-up events due to automotive transients or EMI. In Sleep Mode the INH pin is left floating. The internal termination between pin LIN and pin VS is disabled. Only a weak pull-up current (typical 10µA) between pin LIN and pin VS is present. The Sleep Mode can be activated independently from the actual level on pin LIN or WAKE. 3. Fail-safe Mode At system power-up or after a wake-up event, the device automatically switches to Fail- safe Mode. It switches the INH pin to a high state, to the VS level. LIN communication is switched off. The microcontroller of the application will then confirm the Normal Mode by setting the EN pin to high. 4. Unpowered Mode If you connect battery voltage to the application circuit, the voltage at the VS pin increases according to the block capacitor. After VS is higher than the VS undervoltage threshold VSth, the IC mode changes from Unpowered Mode to Fail-safe Mode. Then the LIN driver is switched off, but the LIN receiver is active, if the TXD pin is at low level. Figure 3-1. Mode of Operation a: VS > 5V b: VS < 5V c: Bus wake-up event d: Wake-up from wake switch Unpowered Mode VBatt = 0V b a Fail-safe Mode INH: high (INH internal high-side switch ON) Communication: OFF b b c EN = 1 d Go to sleep command EN = 0; after 1 → 0 while TXD = 1 Normal Mode INH: high (INH HS switch ON) Communication: ON Sleep Mode EN = 1 Local wake-up event INH: high impedence (INH HS switch OFF) Communication: OFF ATA6662C [DATASHEET] 4916S–AUTO–09/14 5 Table 3-1. Table of Modes Mode of Operation Transceiver INH RXD LIN Fail-safe Off On High, except after wake up Recessive Normal On On LIN depending TXD depending Sleep Off Off High ohmic Recessive Wake-up events from Sleep Mode: ● LIN bus ● ● ● EN pin WAKE pin VS undervoltage Figure 3-1 on page 5, Figure 3-2 and Figure 3-3 on page 7 show details of wake-up operations. 3.12 Remote Wake-up via Dominant Bus State A voltage less than the LIN pre-wake detection VLINL at pin LIN activates the internal LIN receiver and switches on the internal slave termination between the LIN pin and the VS pin. A falling edge at pin LIN, followed by a dominant bus level VBUSdom maintained for a certain time period (tBUS) and a rising edge at pin LIN results in a remote wake-up request. The device switches to Fail-safe Mode. Pin INH is activated (switches to VS) and the internal termination resistor is switched on. The remote wake-up request is indicated by a low level at pin RXD to interrupt the microcontroller (see Figure 3-2 on page 6). Figure 3-2. LIN Wake-up Waveform Diagram Bus wake-up filtering time (tBUS) LIN bus High INH Low or floating RXD High or floating Low External voltage regulator Off state Regulator wake-up time delay EN High EN Node in sleep state Microcontroller start-up delay time 6 ATA6662C [DATASHEET] 4916S–AUTO–09/14 Normal Mode 3.13 Local Wake-up via Pin WAKE A falling edge at pin WAKE, followed by a low level maintained for a certain time period (tWAKE), results in a local wake-up request. The wake-up time (tWAKE) ensures that no transient, according to ISO7637, creates a wake-up. The device switches to Fail-safe Mode. Pin INH is activated (switches to VS) and the internal termination resistor is switched on. The local wakeup request is indicated by a low level at pin RXD to interrupt the microcontroller and a strong pull-down at pin TXD (see Figure 3-3). The voltage threshold for a wake-up signal is 3V below the VS voltage with an output current of typical –3µA. Even in the case of a continuous low at pin WAKE it is possible to switch the IC into Sleep Mode via a low at pin EN. The IC will stay in Sleep Mode for an unlimited time. To generate a new wake up at pin WAKE it needs first a high signal > 6µs before a negative edge starts the wake-up filtering time again. Figure 3-3. Wake-up from Wake-up Switch Wake pin INH State change Low or floating RXD High or floating TXD TXD weak pull-down resistor High Low High TXD strong pull-down Weak pull-down Wake filtering time tWAKE Voltage regulator On state Off state Regulator wake-up time delay EN Node in operation EN High Node in sleep state Microcontroller start-up delay time 3.14 Wake-up Source Recognition The device can distinguish between a local wake-up request (pin WAKE) and a remote wake-up request (LIN bus). The wake-up source can be read on pin TXD in Fail-safe Mode. If an external pull-up resistor (typically 5k) has been added on pin TXD to the power supply of the microcontroller, a high level indicates a remote wake-up request (weak pull-down at pin TXD) and a low level indicates a local wake-up request (strong pull-down at pin TXD). The wake-up request flag (signalled on pin RXD) as well as the wake-up source flag (signalled on pin TXD) are reset immediately if the microcontroller sets pin EN to high (see Figure 3-2 on page 6 and Figure 3-3). ATA6662C [DATASHEET] 4916S–AUTO–09/14 7 3.15 8 Fail-safe Features ● The reverse current is < 2µA at pin LIN during loss of VBAT; this is optimal behavior for bus systems where some slave nodes are supplied from battery or ignition. ● ● ● ● Pin EN provides a pull-down resistor to force the transceiver into Sleep Mode if EN is disconnected. ● The implemented hysteresis, Thys, enables the LIN output again after the temperature has been decreased. Pin RXD is set floating if VBAT is disconnected. Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected. The LIN output driver has a current limitation, and if the junction temperature Tj exceeds the thermal shut-down temperature Toff, the output driver switches off. ATA6662C [DATASHEET] 4916S–AUTO–09/14 4. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Min. Typ. Max. Unit VS - Continuous supply voltage –0.3 +40 V Wake DC and transient voltage (with 33-k serial resistor) - Transient voltage due to ISO7637 (coupling 1nF) –1 –150 +40 +100 V V Logic pins (RXD, TXD, EN) –0.3 +5.5 V LIN - DC voltage - Transient voltage due to ISO7637 (coupling 1nF) –27 –150 +40 +100 V V INH - DC voltage –0.3 VS + 0.3 V ESD according to IBEE LIN EMC Test specification 1.0 following IEC 61000-4-2 - Pin VS, LIN to GND - Pin WAKE (33k serial resistor) ±6 ±5 KV KV ESD HBM following STM5.1 with 1.5k/100pF - Pin VS, LIN, WAKE, INH to GND ±6 KV ±3 KV CDM ESD STM 5.3.1 ±750 V Machine Model ESD AEC-Q100-RevF(003) ±100 V HBM ESD ANSI/ESD-STM5.1 JESD22-A114 AEC-Q100 (002) Junction temperature Tj –40 +150 °C Storage temperature Tstg –55 +150 °C Symbol Min. Max. Unit 145 K/W 5. Thermal Characteristics Parameters Thermal resistance junction ambient RthJA Special heat sink at GND (pin 5) on PCB (fused lead frame to pin 5) RthJA Typ. 80 K/W Thermal shutdown Toff 150 165 180 °C Thermal shutdown hysteresis Thys 5 10 20 °C ATA6662C [DATASHEET] 4916S–AUTO–09/14 9 6. Electrical Characteristics 5V < VS < 27V, Tj = –40°C to +150°C No. 1 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 7 VS 5 13.5 27 V A Sleep Mode VLIN > VS – 0.5V VS < 14V 7 IVSsleep 10 20 µA A Bus recessive VS < 14V 7 IVSrec 0.9 1.3 mA A 1.2 2 mA A VS Pin 1.1 DC voltage range nominal 1.2 Supply current in Sleep Mode 1.3 1.4 Supply current in Normal Mode Bus dominant VS < 14V Total bus load > 500 7 IVSdom 1.5 Supply current in Fail-safe Mode 7 IVSfail 0.5 1.1 mA A 1.6 VS undervoltage threshold on VSth 4 4.95 V A 1.7 VS undervoltage threshold off VSth 4.05 5 V A 1.8 VS undervoltage threshold hysteresis 7 VSth_hys 50 500 mV A 1.3 8 mA A 0.4 V A Bus recessive VS < 14V 2 RXD Output Pin (Open Drain) 2.1 Low-level output sink current Normal Mode VLIN = 0V, VRXD = 0.4V 1 IRXDL 2.2 RXD saturation voltage 5-k pull-up resistor to 5V 1 VsatRXD 2.3 High-level leakage current Normal Mode VLIN = VBAT, VRXD = 5V 1 IRXDH –3 +3 µA A 2.4 ESD zener diode IRXD = 100µA 1 VZRXD 5.8 8.6 V A 3 2.5 TXD Input Pin 3.1 Low-level voltage input 4 VTXDL –0.3 +0.8 V A 3.2 High-level voltage input 4 VTXDH 2 5.5 V A 3.3 Pull-down resistor VTXD = 5V 4 RTXD 125 600 k A 3.4 Low-level leakage current VTXD = 0V 4 ITXD_leak –3 +3 µA A Low-level output sink current Fail-safe Mode, local wake up VTXD = 0.4V VLIN = VBAT 4 ITXD 1.3 8 mA A 3.5 4 250 2.5 EN Input Pin 4.1 Low-level voltage input 2 VENL –0.3 +0.8 V A 4.2 High-level voltage input 2 VENH 2 5.5 V A 4.3 Pull-down resistor VEN = 5V 2 REN 125 600 k A 4.4 Low-level input current VEN = 0V 2 IEN –3 +3 µA A 5 250 INH Output Pin 5.1 High-level voltage Normal Mode IINH = –2mA 8 VINHH VS – 3 VS V A 5.2 Leakage current Sleep Mode VINH = 0V/27V, VS = 27V 8 IINHL –3 +3 µA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 10 ATA6662C [DATASHEET] 4916S–AUTO–09/14 6. Electrical Characteristics (Continued) 5V < VS < 27V, Tj = –40°C to +150°C No. 6 Parameters Test Conditions Pin Symbol Min. 3 VWAKEH Typ. Max. Unit Type* VS – 1V VS + 0.3V V A VS – 3.3V V A WAKE Pin 6.1 High-level input voltage 6.2 Low-level input voltage IWAKE = Typically –3µA 3 VWAKEL –1V 6.3 Wake pull-up current VS < 27V 3 IWAKE –30 µA A 6.4 High-level leakage current VS = 27V, VWAKE = 27V 3 IWAKE –5 +5 µA A 0.9 VS VS V A 7 –10 LIN Bus Driver 7.1 Driver recessive output voltage RLOAD = 500 / 1k 6 VBUSrec 7.2 Driver dominant voltage VBUSdom_DRV_LoSUP VVS = 7V, Rload = 500 6 V_LoSUP 1.2 V A 7.3 Driver dominant voltage VBUSdom_DRV_HiSUP VVS = 18V, Rload = 500 6 V_HiSUP 2 V A 7.4 Driver dominant voltage VBUSdom_DRV_LoSUP VVS = 7V, Rload = 1000 6 V_LoSUP_1k 0.6 V A 7.5 Driver dominant voltage VBUSdom_DRV_HiSUP VVS = 18V, Rload = 1000 6 V_HiSUP_1k_ 0.8 V A 7.6 Pull-up resistor to VS The serial diode is mandatory 6 RLIN 20 60 k A 7.7 Voltage drop at the serial diodes In pull-up path with Rslave ISerDiode = 10mA 6 VSerDiode 0.4 1.0 V D 7.8 LIN current limitation VBUS = VBAT_max 6 IBUS_LIM 40 200 mA A 7.9 Input leakage current at the receiver, including pull-up resistor as specified 6 IBUS_PAS_dom –1 mA A 7.10 Driver off 8V < VBAT < 18V Leakage current LIN recessive 8V < VBUS < 18V VBUS ≥ VBAT 6 IBUS_PAS_rec 7.11 Leakage current at ground loss; Control unit disconnected from GNDDevice = VS ground; Loss of local ground VBAT =12V must not affected 0V < VBUS < 18V communication in the residual network 6 IBUS_NO_gnd 7.12 Leakage current at loss of battery; Node has to substain VBAT disconnected the current that can flow under VSUP_Device = GND this condition; Bus must remain 0V < VBUS < 18V operational under this condition 6 IBUS_NO_bat 7.13 Capacitance on pin LIN to GND 6 CLIN Input leakage current Driver off VBUS = 0V, VS = 12V –10 30 120 10 20 µA A +0.5 +10 µA A 0.1 2 µA A 20 pF D *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter ATA6662C [DATASHEET] 4916S–AUTO–09/14 11 6. Electrical Characteristics (Continued) 5V < VS < 27V, Tj = –40°C to +150°C No. 8 Parameters Test Conditions Pin Symbol Min. Max. Unit Type* 0.525 VS V A 0.4 VS V A LIN Bus Receiver 0.475 0.5 VS VS 8.1 Center of receiver threshold VBUS_CNT = (Vth_dom + Vth_rec) / 2 6 VBUS_CNT 8.2 Receiver dominant state VEN = 5V 6 VBUSdom –27 8.3 Receiver recessive state VEN = 5V 6 VBUSrec 0.6 VS 6 VBUShys 0.028 VS 6 VLINH Switches the LIN receiver on 6 8.4 Receiver input hysteresis 8.5 Pre-wake detection LIN High-level input voltage 8.6 Pre-wake detection LIN Low-level input voltage 9 Typ. VHYS = Vth_rec – Vth_dom 40 V A 0.175 VS V A VS – 2V VS + 0.3V V A VLINL –27V VS – 3.3V V A 0.1 VS Internal Timers 9.1 Dominant time for wake-up via LIN bus VLIN = 0V 6 tBUS 30 90 150 µs A 9.2 Time of low pulse for wake-up via pin WAKE VWAKE = 0V 3 tWAKE 7 35 50 µs A 9.3 Time delay for mode change from Fail-safe Mode to Normal Mode via pin EN VEN = 5V 2 tnorm 2 7 15 µs A 9.4 Time delay for mode change from Normal Mode into Sleep Mode via pin EN VEN = 0V 2 tsleep 2 7 12 µs A 9.5 TXD dominant time out time VTXD = 0V 4 tdom 6 9 20 ms A 9.6 Power-up delay between VS = 5V until INH switches to high VVS = 5V 200 µs A tVS LIN Bus Driver AC Parameter with Different Bus Loads 10 10.1 10.2 10.3 Load 1 (small): 1nF, 1k ; Load 2 (large): 10nF, 500 ; RRXD = 5k ; CRXD = 20pF; Load 3 (medium): 6.8nF, 660 characterized on samples; 10.1 and 10.2 specifies the timing parameters for proper operation at 20Kbit/s, 10.3 and 10.4 at 10.4Kbit/s. Duty cycle 1 THRec(max) = 0.744 VS THDom(max) = 0.581 VS VS = 7.0V to 18V tBit = 50µs D1 = tbus_rec(min) / (2 tBit) 6 D1 Duty cycle 2 THRec(min) = 0.422 VS THDom(min) = 0.284 VS VS = 7.0V to 18V tBit = 50µs D2 = tbus_rec(max) / (2 tBit) 6 D2 Duty cycle 3 THRec(max) = 0.778 VS THDom(max) = 0.616 VS VS = 7.0V to 18V tBit = 96µs D3 = tbus_rec(min) / (2 tBit) 6 D3 0.396 A 0.581 0.417 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 12 ATA6662C [DATASHEET] 4916S–AUTO–09/14 A A 6. Electrical Characteristics (Continued) 5V < VS < 27V, Tj = –40°C to +150°C No. 10.4 11 Parameters Test Conditions Duty cycle 4 THRec(min) = 0.389 VS THDom(min) = 0.251 VS VS = 7.0V to 18V tBit = 96µs D4 = tbus_rec(max) / (2 tBit) Pin Symbol Min. Typ. Max. Unit Type* 6 D4 0.590 6 µs A +2 µs A A Receiver Electrical AC Parameters of the LIN Physical Layer LIN receiver, RXD load conditions: CRXD = 20pF, Rpull-up = 5k 11.1 Propagation delay of receiver (see Figure 6-1) trec_pd = max(trx_pdr, trx_pdf) VS = 7.0V to 18V 1 trx_pd 11.2 Symmetry of receiver propagation delay rising edge minus falling edge trx_sym = trx_pdr – trx_pdf VS = 7.0V to 18V 1 trx_sym –2 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Figure 6-1. Definition of Bus Timing Parameter tBit tBit tBit TXD (Input to transmitting node) tBus_dom(max) tBus_rec(min) Thresholds of receiving node 1 THRec(max) VS (Transceiver supply of transmitting node) THDom(max) LIN Bus Signal Thresholds of THRec(min) receiving node 2 THDom(min) tBus_dom(min) tBus_rec(max) RXD (Output of receiving node 1) trx_pdf(1) trx_pdr(1) RXD (Output of receiving node 2) trx_pdr(2) trx_pdf(2) ATA6662C [DATASHEET] 4916S–AUTO–09/14 13 Figure 6-2. Application Circuit Master node pull-up VBATTERY 22μF 100nF 12V 1k 7 ATA6662C 5kΩ VDD VS Receiver 1 LIN sub bus 5V RXD Filter Microcontroller LIN Wake-up bus timer 4 TXD Time-out timer TXD GND IO 33kΩ 14 ATA6662C [DATASHEET] 4916S–AUTO–09/14 3 WAKE Slew rate control Short-circuit and overtemperature protection 220pF VS VS Control unit 10kΩ External switch 6 Wake-up timer 5 Sleep mode GND 2 8 EN INH 7. Ordering Information Extended Type Number Package ATA6662C-GAQW LIN transceiver, Pb-free, 4k, taped and reeled Package Information E1 L A b A2 C D A1 8. SO8 Remarks e 8 E 5 technical drawings according to DIN specifications Dimensions in mm 1 4 COMMON DIMENSIONS Pin 1 identity (Unit of Measure = mm) Symbol MIN NOM MAX A 1.5 1.65 1.8 A1 A2 0.1 1.4 0.15 1.47 0.25 1.55 D 4.8 4.9 5 E 5.8 6 6.2 E1 3.8 3.9 4 L 0.4 0.65 0.9 C 0.15 0.2 0.25 b e 0.3 0.4 0.5 NOTE 1.27 BSC 05/08/14 TITLE Package Drawing Contact: [email protected] Package: SO8 GPC DRAWING NO. REV. 6.543-5185.01-4 1 ATA6662C [DATASHEET] 4916S–AUTO–09/14 15 9. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. 4916S-AUTO-09/14 History ● Section 7 “Ordering Information” on page 15 updated ● Section 8 “Package Information” on page 15 updated 4916R-AUTO-04/14 ● Put datasheet in the latest template 4916Q-AUTO-02/13 ● Section 7 “Ordering Information” on page 15 updated 4916P-AUTO-10/11 ● Section 3.11 “Operation Modes” on page 5 changed 4916O-AUTO-05/10 ● Features on page 1 changed ● Heading 3.6: text changed ● Features on page 1 changed 4916N-AUTO-03/10 ● Section 4 “Absolute Maximum Ratings” on page 9 changed ● Section 6 “Electrical Characteristics” number 7.13 on page 11 added ● Section 7 “Ordering Information” on page 16 changed ● Figure 1-1 “Block Diagram” on page 1 changed 4916M-AUTO-09/09 ● Section 4 “Absolute Maximum Ratings” on page 8 changed ● Figure 6-2 “Application Circuit” on page 14 changed 4916L-AUTO-02/09 ● Section 6 “El.Characteristics” numbers 3.2 and 4.2 on page 9 changed ● Figure 2-1 “Pinning SO8” on page 2 changed ● Section 3.2 “Supply Pin (VS)” on page 3 changed ● Section 3.8 “Enable Input Pin (EN)” on page 4 changed ● Section 3.11 “Operation Modes” on page 5 changed ● Section 3.12 “Remote Wake-up via Dominant Bus State” on page 5 changed 4916K-AUTO-12/08 ● Section 3.14 “Wake-up Source Recognition” on page 6 changed ● Figure 3.2 “LIN Wake-up Waveform Diagram” on page 7 changed ● Figure 3.3 “Wake-up from Wake-up Switch” on page 7 changed ● Section 4 “Absolute Maximum Ratings” on page 8 changed ● Section 5 “Thermal Resistance” on page 8 changed ● Section 6 “Electrical Characteristics” on pages 9 to 12 changed ● Figure 6-2 “Application Circuit” on page 13 changed ● “Pre-normal Mode” in “Fail-safe Mode” changed 4916J-AUTO-02/08 ● Section 3.9 “Inhibit Output Pin (INH) on page 4 changed ● Section 4 “Absolute Maximum Ratings” on page 8 changed ● Section 6 “Electrical Characteristics” number 5.1 on page 9 changed 4916I-AUTO-12/07 4916H-AUTO-10/07 4916G-AUTO-07/07 16 ● Section 3.1 “Physical Layer Compatibility” on page 3 added ● Section 6 “El.Characteristics” numbers 1.5, 1.6 and 1.7 on page 9 changed ● Section 7 “Ordering Information” on page 14 changed ● Put datasheet in a new template ● Capital T for time generally changed in a lower case t ATA6662C [DATASHEET] 4916S–AUTO–09/14 Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. (Continued) Revision No. History ● Figure 1-1 “Block Diagram” on page 1 changed 4916F-AUTO-05/07 ● Figure 6-2 “Application Circuit” on page 13 changed ● Features on page 1 changed ● Section 6 “El.Characteristics” numbers 10.1 to 10.4 and 11.1, 11.2 changed 4916E-AUTO-02/07 ● Section 4 “Absolute Maximum Ratings” on page 8 changed ● Section 2 “Electrical Characteristics” on pages 9 to 11 changed ● Features on page 1 changed ● Section 1 “Description” on page 1 changed ● Table 2-1 “Pin Description” on page 2 changed ● Section 3.2 “Ground Pin (GND) on page 3 changed 4916D-AUTO-02/07 ● Section 3.7 “Enable Input Pin (EN)” on page 4 changed ● Section 3.11 “Remote Wake-up via Dominant Bus State” on page 5 changed ● Figure 3-1 “Mode of Operation” on page 6 changed ● Section 3-14 “Fail-safe Features” on page 6 changed ● Section 4 “Absolute Maximum Ratings” on page 8 changed ● Section 6 “Electrical Characteristics” on pages 9 to 11 changed ATA6662C [DATASHEET] 4916S–AUTO–09/14 17 XXXXXX Atmel Corporation 1600 Technology Drive, San Jose, CA 95110 USA T: (+1)(408) 441.0311 F: (+1)(408) 436.4200 | www.atmel.com © 2014 Atmel Corporation. / Rev.: 4916S–AUTO–09/14 Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. 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