AT93C56B/66B Automotive - Complete

AT93C56B and AT93C66B
3-wire Automotive Temperature Serial EEPROM
2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
DATASHEET
Features

Medium-voltage and Standard-voltage Operation
̶


VCC = 2.5V to 5.5V
Automotive Temperature Range -40C to 125C
User-selectable Internal Organization
̶
̶
2K: 256 x 8 or 128 x 16
4K: 512 x 8 or 256 x 16





3-wire Serial Interface
Sequential Read Operation
2MHz Clock Rate
Self-timed Write Cycle (5ms max)
High Reliability
̶
̶


Endurance: 1,000,000 Write Cycles
Data Retention: 100 Years
Lead-free/Halogen-free Devices Available
8-lead JEDEC SOIC and 8-lead TSSOP Packages
Description
The Atmel® AT93C56B/66B provides 2,048/4,096 bits of Serial Electrically
Erasable Programmable Read-Only Memory (EEPROM). The EEPROM is
organized as 128/256 words of 16 bits each when the ORG pin is connected to
VCC and 256/512 words of 8 bits each when it is tied to ground. The device is
optimized for use in many automotive applications where low-power and
low-voltage operations are essential. AT93C56B/66B is available in space-saving
8-lead JEDEC SOIC and 8-lead TSSOP packages.
AT93C56B/66B is enabled through the Chip Select (CS) pin and accessed via a
3-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift
Clock (SK). Upon receiving a Read instruction at DI, the address is decoded and
the data is clocked out serially on the data output pin DO. The write cycle is
completely self-timed and no separate erase cycle is required before write. The
write cycle is only enabled when the part is in the Erase/Write Enable state. When
CS is brought high following the initiation of a write cycle, the DO pin outputs the
Ready/Busy status of the part.
AT93C56B/66B operates from 2.5V to 5.5V.
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
1.
Pin Configuration and Pinouts
Figure 1.
Pin Name
2.
Pin Configurations
Function
8-lead TSSOP
(Top View)
(Top View)
CS
Chip Select
CS
1
8
SK
Serial Data Clock
VCC
SK
2
7
DC
DI
Serial Data Input
DI
3
6
ORG
DO
4
5
GND
DO
Serial Data Output
GND
Ground
VCC
Power Supply
ORG
Internal Organization
DC
Don’t Connect
Note:
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
DC
ORG
GND
Drawings are not to scale.
Absolute Maximum Ratings*
Operating Temperature  55C to +125C
Storage Temperature 65C to +150C
Voltage on any pin
with respect to ground 1.0V to +7.0V
Maximum Operating Voltage . . . . . . . . . . . . . . . 6.25V
DC Output Current . . . . . . . . . . . . . . . . . . . . . . .5.0mA
2
8-lead SOIC
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other conditions beyond those indicated in
the operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability
3.
Block Diagram
Figure 3-1.
Block Diagram
VCC
GND
Memory Array
ORG
256/512 x 8
or
128/256 x 16
Address
Decoder
Data
Register
Output
Buffer
DI
CS
SK
Note:
Mode
Decode
Logic
Clock
Generator
DO
When the ORG pin is connected to VCC, the “x 16” organization is selected. When it is connected to ground,
the “x 8” organization is selected. If the ORG pin is left unconnected and the application does not load the input
beyond the capability of the internal 1m pullup, then the “x 16” organization is selected.
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
3
4.
Electrical Characteristics
4.1
Pin Capacitance
Table 4-1.
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25C, f = 1.0MHz, VCC = +5.0V (unless otherwise noted).
Symbol
Test Conditions
COUT
CIN
Note:
4.2
1.
Max
Units
Conditions
Output Capacitance (DO)
5
pF
VOUT = 0V
Input Capacitance (CS, SK, DI)
5
pF
VIN = 0V
This parameter is characterized and is not 100% tested.
DC Characteristics
Table 4-2.
DC Characteristics
Applicable over recommended operating range from: TA = 40C to +125C, VCC = +2.5V to +5.5V (unless otherwise noted).
Symbol
Parameter
VCC1
Supply Voltage
VCC2
Supply Voltage
ICC
Supply Current
VCC = 5.0V
ISB1
Standby Current
ISB2
Min
Typ
Max
Unit
2.5
5.5
V
4.5
5.5
V
Read at 1.0MHz
0.5
2.0
mA
Write at 1.0MHz
0.5
2.0
mA
VCC = 2.5V
CS = 0V
3.0
10.0
μA
Standby Current
VCC = 5.0V
CS = 0V
10.0
15.0
μA
IIL
Input Leakage
VIN = 0V to VCC
0.1
3.0
μA
IOL
Output Leakage
VIN = 0V to VCC
0.1
3.0
μA
VIL1(1)
Input Low Voltage
0.6
0.8
V
VIH1(1)
Input High Voltage
2.0
VCC + 1
VOL1
Output Low Voltage
VOH1
Output High Voltage
Note:
4
Test Condition
1.
2.5V  VCC  5.5V
2.5V  VCC  5.5V
IOL = 2.1m
IOH = 0.4mA
VIL min and VIH max are reference only and are not tested.
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
0.4
2.4
V
V
4.3
AC Characteristics
Table 4-3.
AC Characteristics
Applicable over recommended operating range from TA = 40°C to + 125°C, VCC = As Specified,
CL = 1 TTL Gate and 100pF (unless otherwise noted).
Symbol
Parameter
fSK
SK Clock
Frequency
tSKH
SK High Time
tSKL
SK Low Time
tCS
Minimum CS
Low Time
tCSS
CS Setup Time
Relative to SK
tDIS
DI Setup Time
Relative to SK
tCSH
CS Hold Time
Relative to SK
tDIH
DI Hold Time
Relative to SK
tPD1
Output Delay to “1”
AC Test
tPD0
Output Delay to “0”
AC Test
tSV
CS to Status Valid
AC Test
tDF
CS to DO in High
Impedance
tWP
Write Cycle Time
Endurance(1)
5.0V, 25°C
Note:
1.
Test Condition
Min
Typ
Max
4.5V  VCC  5.5V
0
2
2.5V  VCC  5.5V
0
1
4.5V  VCC  5.5V
250
2.5V  VCC  5.5V
250
4.5V  VCC  5.5V
250
2.5V  VCC  5.5V
250
4.5V  VCC  5.5V
250
2.5V  VCC  5.5V
250
4.5V  VCC  5.5V
50
2.5V  VCC  5.5V
50
4.5V  VCC  5.5V
100
2.5V  VCC  5.5V
100
Units
MHz
ns
ns
ns
ns
ns
0
4.5V  VCC  5.5V
100
2.5V  VCC  5.5V
100
ns
ns
4.5V  VCC  5.5V
250
2.5V  VCC  5.5V
500
4.5V  VCC  5.5V
250
2.5V  VCC  5.5V
500
4.5V  VCC  5.5V
250
2.5V  VCC  5.5V
250
AC Test
4.5V  VCC  5.5V
100
CS = VIL
2.5V  VCC  5.5V
150
2.5V  VCC  5.5V
5
1M
ns
ns
ns
ns
ms
Write Cycles
This parameter is characterized and is not 100% tested.
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
5
5.
Instruction Set
Table 5-1.
Instruction Set for the AT93C56B/66B
Address
Instruction
Opcode
x8
x 16
Read
1
10
A8 – A0
A7  A0
EWEN
1
00
11XXXXXXX
11XXXXXX
Erase
1
11
A8  A0
A7  A0
Write
1
01
A8  A0
A7  A0
ERAL
1
00
10XXXXXXX
10XXXXXX
WRAL
1
00
01XXXXXXX
01XXXXXX
EWDS
1
00
00XXXXXXX
00XXXXXX
Note:
6
Data
SB
x8
x 16
Reads data stored in memory, at
specified address.
Write enable must precede all
programming modes.
Erase memory location An  A0.
D7 D0
D15 D0
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
Writes memory location An A0.
Erases all memory locations. Valid
only at VCC = 4.5V to 5.5V.
D7  D0
D15  D0
The X in the address field represent don’t care values and must be clocked.
AT93C56B/66B Automotive [DATASHEET]
Comments
Writes all memory locations. Valid
only at VCC = 5.0V ±10% and
Disable Register cleared.
Disables all programming
instructions.
6.
Functional Description
AT93C56B/66B is accessed via a simple and versatile three-wire serial communication interface. Device
operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising
edge of CS and consists of a start bit (Logic 1) followed by the appropriate opcode and the desired memory
address location.
Read: The Read instruction contains the address code for the memory location to be read. After the instruction
and address are decoded, data from the selected memory location is available at the serial output pin DO.
Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a dummy
bit (Logic 0) precedes the 8- or 16-bit data output string. AT93C56B/66B supports sequential read operations.
The device will automatically increment the internal address pointer and clock out the next memory location as
long as Chip Select (CS) is held high. In this case, the dummy bit (Logic 0) will not be clocked out between
memory locations, thus allowing for a continuous stream of data to be read.
Figure 6-1.
Read Timing
tCS
CS
SK
DI
DO
A0
AN
High Impedance
DN
D0
Erase/Write Enable (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first
before any programming instructions can be carried out. Please note that once in the EWEN state,
programming remains enabled until an EWDS instruction is executed or VCC power is removed from the part.
Figure 6-2.
EWEN Timing
tCS
CS
SK
DI
1
0
0
1
1
...
AT93C56B/66B Automotive [DATASHEET]
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7
Erase: The Erase instruction programs all bits in the specified memory location to the Logical 1 state. The
self-timed erase cycle starts once the Erase instruction and address are decoded. The DO pin outputs the
Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250ns (tCS). A Logic 1
at pin DO indicates that the selected memory location has been erased, and the part is ready for another
instruction.
Figure 6-3.
Erase Timing
tCS
CS
STANDBY
CHECK
STATUS
SK
DI
1
1
1
AN AN-1 AN-2
...
A0
tDF
tSV
DO
High Impedance
High Impedance
BUSY
READY
tWP
Write: The Write instruction contains the 8 or 16 bits of data to be written into the specified memory location.
The self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI. The
DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of
250ns (tCS). A Logic 0 at DO indicates that programming is still in progress. A Logic 1 indicates that the memory
location at the specified address has been written with the data pattern contained in the instruction and the part
is ready for further instructions. A Ready/Busy status cannot be obtained if the CS is brought high after the end
of the self-timed programming cycle, tWP..
Figure 6-4.
Write Timing
tCS
CS
SK
DI
DO
1
0
1
AN
...
A0
DN
...
D0
High Impedance
BUSY
tWP
8
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
READY
Erase All (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the Logic 1 state
and is primarily used for testing purposes. The DO pin outputs the ready/busy status of the part if CS is brought
high after being kept low for a minimum of 250ns (tCS). The ERAL instruction is valid only at VCC = 5.0V 10%.
Figure 6-5.
ERAL Timing
tCS
CS
CHECK
STATUS
STANDBY
tSV
tDF
SK
DI
1
DO
0
0
1
0
BUSY
High Impedance
High Impedance
READY
tWP
Note:
1.
Valid only at VCC = 4.5V to 5.5V.
Write All (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns
specified in the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after
being kept low for a minimum of 250ns (tCS). The WRAL instruction is valid only at VCC = 5.0V ±10%.
Figure 6-6.
WRAL Timing
tCS
CS
SK
DI
1
0
0
0
1
...
DN
...
D0
BUSY
High Impedance
DO
READY
tWP
Note:
1.
Valid only at VCC = 4.5V to 5.5V
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
9
Erase/Write Disable (EWDS): To protect against accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be executed after all programming operations. The
operation of the Read instruction is independent of both the EWEN and EWDS instructions and can be
executed at any time.
Figure 6-7.
EWDS Timing
tCS
CS
SK
DI
10
1
0
0
0
0
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
...
7.
Timing Diagrams
Figure 7-1.
Synchronous Data Timing
CS
VIH
1µs(1)
VIL
tCSS
SK
DI
tSKL
tSKH
VIL
VIH
tDIS
tDIH
VIL
tPD0
DO (READ)
DO (PROGRAM)
Note:
tCSH
VIH
tDF
tPD1
VOH
VOL
VOH
tDF
tSV
Status Valid
VOL
This is the minimum SK period.
Table 7-1.
Organization Key for Timing Diagrams
AT93C56B (2K)
Notes:
7.1
1.
2.
AT93C66B (4K)
I/O
x8
x 16
x8
x 16
AN
A8(1)
A7(2)
A8
A7
DN
D7
D15
D7
D15
A8 is a don’t care value, but the extra clock is required.
A7 is a don’t care value, but the extra clock is required.
Power Recommendation
The device internal POR (Power-On Reset) threshold is just below the minimum device operating voltage.
Power shall rise monotonically from 0.0Vdc to full VCC in less than 1ms. Hold at full VCC for at least 100μs before
the first operation. Power shall drop from full VCC to 0.0Vdc in less than 1ms. Power dropping to a non-zero level
and then slowly going to zero is not recommended. Power shall remain off (0.0Vdc) for 0.5s minimum. Please
consult Atmel if your power conditions do not meet the above recommendations.
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
11
8.
Ordering Information
8.1
Ordering Code Detail
AT 9 3 C 5 6 B - S S P D - T
Atmel Designator
Shipping Carrier Option
T = Tape and Reel
Product Family
Operating Voltage
93C = 3-wire Automotive
Serial EEPROM
D = 2.5V to 5.5V
Package Device Grade
Device Density
P = Lead-free / Halogen-free
AutomotiveTemperature Range
(-40°C to +125°C)
56 = 2 kilobit
66 = 4 kilobit
Device Revision
Package Type
SS = JEDEC SOIC
X = TSSOP
8.2
Atmel Ordering Code Information
Delivery Information
Ordering Code
Lead Finish
AT93C56B-SSPD-T
AT93C56B-XPD-T
AT93C66B-SSPD-T
AT93C66B-XPD-T
Package
Lead-free
Halogen-free
Lead-free
Halogen-free
Form
8S1
8X
Tape and Reel
8S1
8X
Quantity
Operation Range
4,000 per Reel
Automotive
Temperature
(40C to 125C)
5,000 per Reel
4,000 per Reel
Tape and Reel
5,000 per Reel
Package Type
12
8S1
8-lead, 0.150" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8X
8-lead, 4.4mm body, Plastic Thin Shrink Small Outline (TSSOP)
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
Automotive
Temperature
(40C to 125C)
9.
Product Markings
AT93C56B and AT93C66B: Package Marking Information
8-lead TSSOP
8-lead SOIC
ATPYWW
###D @
AAAAAAA
ATMLPYWW
###D
@
AAAAAAAA
Note 1:
designates pin 1
Note 2: Package drawings are not to scale
Catalog Number Truncation
AT93C56B
Truncation Code ###: 56B
AT93C66B
Truncation Code ###: 66B
Date Codes
Y = Year
2: 2012
3: 2013
4: 2014
5: 2015
Voltages
6: 2016
7: 2017
8: 2018
9: 2019
M = Month
A: January
B: February
...
L: December
WW = Work Week of Assembly
02: Week 2
04: Week 4
...
52: Week 52
Country of Assembly
Lot Number
@ = Country of Assembly
AAA...A = Atmel Wafer Lot Number
Trace Code
D: 2.5V min
Grade/Lead Finish Material
P: Automotive/NiPdAu
Atmel Truncation
XX = Trace Code (Atmel Lot Numbers Correspond to Code)
Example: AA, AB.... YZ, ZZ
AT: Atmel
ATM: Atmel
ATML: Atmel
3/15/12
TITLE
Package Mark Contact:
[email protected]
93C56-66BAM, AT93C56B and AT93C66B Automotive
Package Marking Information
DRAWING NO.
REV.
93C56-66BAM
C
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
13
10.
Packaging Information
10.1
8S1 — 8-lead JEDEC SOIC
C
1
E
E1
L
N
Ø
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
A1
D
SIDE VIEW
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
MIN
NOM
MAX
–
–
1.75
A1
0.10
–
0.25
b
0.31
–
0.51
C
0.17
–
0.25
SYMBOL
A
D
4.90 BSC
E
6.00 BSC
E1
3.90 BSC
e
1.27 BSC
L
0.40
–
1.27
Ø
0°
–
8°
NOTE
3/6/2015
Package Drawing Contact:
[email protected]
14
TITLE
8S1, 8-lead (0.150” Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
GPC
SWB
DRAWING NO.
REV.
8S1
H
10.2
8X — 8-lead TSSOP
C
1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
A
b
A1
e
COMMON DIMENSIONS
(Unit of Measure = mm)
A2
D
SYMBOL
Side View
Notes:
1. This drawing is for general information only.
Refer to JEDEC Drawing MO-153, Variation AA, for proper
dimensions, tolerances, datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate
burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15mm (0.006in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions.
Inter-lead Flash and protrusions shall not exceed 0.25mm
(0.010in) per side.
4. Dimension b does not include Dambar protrusion.
Allowable Dambar protrusion shall be 0.08mm total in excess
of the b dimension at maximum material condition. Dambar
cannot be located on the lower radius of the foot. Minimum
space between protrusion and adjacent lead is 0.07mm.
5. Dimension D and E1 to be determined at Datum Plane H.
MIN
NOM
MAX
A
-
-
1.20
A1
0.05
-
0.15
A2
0.80
1.00
1.05
D
2.90
3.00
3.10
2, 5
E
NOTE
6.40 BSC
E1
4.30
4.40
4.50
3, 5
b
0.19
0.25
0.30
4
e
L
0.65 BSC
0.45
L1
C
0.60
0.75
1.00 REF
0.09
-
0.20
2/27/14
TITLE
Package Drawing Contact:
[email protected]
GPC
8X, 8-lead 4.4mm Body, Plastic Thin
Shrink Small Outline Package (TSSOP)
TNR
DRAWING NO.
8X
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
REV.
E
15
11.
16
Revision History
Doc. Rev.
Date
8811C
02/2016
8811B
08/2012
8811A
06/2012
Comments
Updated 8S1 and 8X package drawings and ordering information. Added the ordering
code detail. Removed bulk(tube) options. Document reorganization.
Removed preliminary status.
Updated Atmel logos and disclaimer/copy page.
Initial document release
AT93C56B/66B Automotive [DATASHEET]
Atmel-8811C-SEEPROM-AT93C56B-66B-Auto-Datasheet_022016
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