VISHAY GSD2004WS-V

GSD2004WS-V
Vishay Semiconductors
Small Signal Switching Diode, High Voltage
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode,especially suited for
e3
applications requiring high voltage capability
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
GSD2004WS-V
Ordering code
Marking
Remarks
B6
Tape and Reel
Symbol
Value
Unit
VR
240
V
VRRM
300
V
GSD2004WS-GS18 or GSD2004WS-GS08
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Peak repetitive reverse voltage
Forward current (continuous)
IF
225
mA
IFRM
625
mA
tp = 1 µs
IFSM
4.0
A
tp = 1 s
IFSM
1.0
Peak repetitive forward current
Non-repetitive peak forward
current
Power dissipation
1)
Ptot
200
1)
A
mW
Device on Fiberglass Substrate, see layout on second page
Document Number 85730
Rev. 1.5, 17-May-06
www.vishay.com
1
GSD2004WS-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
6501)
°C/W
Typical thermal resistance
junction to ambient air
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
1)
Device on Fiberglass Substrate, see layout on second page
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Min
Reverse breakdown voltage
Parameter
IR = 100 µA
Test condition
VBR
300
Leakage current
VR = 240 V
Forward voltage
Typ.
Max
Unit
IR
100
nA
VR = 240 V, Tj = 150 °C
IR
100
µA
V
IF = 20 mA
VF
0.87
V
IF = 100 mA
VF
1.00
V
Diode capacitance
VF = VR = 0, f = 1 MHz
Ctot
5.0
pF
Reverse recovery time
IF = IR = 30 mA, Irr = 3.0 mA,
RL = 100 Ω
trr
50
ns
1)
0.83
Device on Fiberglass Substrate, see layout
0.1 (0.004) max
0.10 (0.004)
0.15 (0.006)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in mm (Inches): SOD323
0.25 (0.010) min
1.95 (0.077)
1.60 (0.063)
foot print recommendation:
0.6 (0.024)
0.6 (0.024)
1.6 (0.063)
0.6 (0.024)
1.1 (0.043)
2.85 (0.112)
2.50 (0.098)
1.5 (0.059)
0.20 (0.008)
0.40 (0.016)
cathode bar
Document no.: S8-V-3910.02-001 (4)
Rev. 03 - Date: 08.November 2004
17443
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Document Number 85730
Rev. 1.5, 17-May-06
GSD2004WS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85730
Rev. 1.5, 17-May-06
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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