Data Sheet

+:
62
1
BGU8052
Low noise high linearity amplifier
Rev. 3 — 5 April 2016
Product data sheet
1. General description
The BGU8052 is a low noise high linearity amplifier for wireless infrastructure
applications, equipped with fast shutdown to support TDD systems. The LNA has a high
input and output return loss and is designed to operate between 1.5 GHz and 2.5 GHz. It
is housed in a 2 mm  2 mm  0.75 mm 8-terminal plastic thin small outline package. The
LNA is ESD protected on all terminals.
2. Features and benefits











Low noise performance: NF = 0.50 dB
High linearity performance: IP3O = 36 dBm
High input return loss > 15 dB
High output return loss > 20 dB
Unconditionally stable up to 20 GHz
Programmable bias current (via resistor)
Small 8-terminal leadless package 2 mm  2 mm  0.75 mm
ESD protection on all terminals
Moisture sensitivity level 1
Fast shut down to support TDD systems
3 V to 5 V single supply
3. Applications






Wireless infrastructure
Low noise and high linearity applications
LTE, W-CDMA, CDMA, GSM
General-purpose wireless applications
TDD or FDD systems
Suitable for small cells
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
4. Quick reference data
Table 1.
Quick reference data
f = 1900 MHz; VCC = 5 V; Tamb = 25 C; input and output 50 ; Rbias = 5.1 k; unless otherwise specified. All RF parameters
are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for
f = 1900 MHz.
Symbol
Parameter
Conditions
Min
Typ
ICC
supply current
on state
36
48
60
mA
off state
-
2.8
-
mA
on state
17
18.5
20
dB
-
dB
Gass
associated gain
NF
noise figure
PL(1dB)
output power at 1 dB gain compression
IP3O
output third-order intercept point
off state
[1]
[1]
2-tone; tone spacing = 1 MHz;
Pi = 15 dBm per tone
Max Unit
-
23
-
0.50
-
18
-
dBm
32
36
-
dBm
0.70 dB
Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
5. Ordering information
Table 2.
Ordering information
Type number
BGU8052
Package
Name
Description
Version
HWSON8
plastic thermal enhanced very very thin small outline package; no
leads; 8 terminals; body 2  2  0.75 mm
SOT1327-1
6. Block diagram
9%,$6
QF
%,$6
5),1
QF
LF
5)287
6+'1
LF
DDD
Fig 1.
BGU8052
Product data sheet
Block diagram
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
2 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
7. Pinning information
7.1 Pinning
WHUPLQDO
LQGH[DUHD
9%,$6
LF
5)B,1
5)B287
QF
6+'1
LF
LF
DDD
7UDQVSDUHQWWRSYLHZ
Fig 2.
Pin configuration
7.2 Pin description
Table 3.
Symbol
Product data sheet
Pin
Description
VBIAS
1
bias voltage
RF_IN
2
RF input
n.c.
3
not connected
i.c.
4, 5, 8
internally connected. Can be grounded or left open in the application.
SHDN
6
shutdown
RF_OUT 7
RF output
GND
BGU8052
Pin description
exposed die pad ground
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
3 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
8. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC
Conditions
Min Max
Unit
supply voltage
-
6
V
Vctrl(sd)
shutdown control voltage
-
3
V
ICC
supply current
-
85
mA
Pi(RF)CW
continuous waveform RF input power
-
20
dBm
Tstg
storage temperature
40 +150 C
-
150
C
-
510
mW
Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001-2010
-
0.9
kV
Charged Device Model (CDM); According
to JEDEC standard 22-C101B
-
2
kV
Min
Typ
Max
Unit
Tj
junction temperature
P
power dissipation
Tcase  125 C
VESD
electrostatic discharge voltage
[1]
[1]
Case is ground solder pad.
9. Recommended operating conditions
Table 5.
Characteristics
Symbol
Parameter
VCC
supply voltage
4.75
5
5.25
V
Z0
characteristic impedance
-
50
-

Tcase
case temperature
40
-
+85
C
Conditions
10. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-case)
thermal resistance from junction to case
Conditions
[1][2]
Typ
Unit
50
K/W
[1]
Case is ground solder pad.
[2]
Thermal resistance measured using infrared measurement technique, device mounted on application board and placed in still air.
BGU8052
Product data sheet
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Rev. 3 — 5 April 2016
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BGU8052
NXP Semiconductors
Low noise high linearity amplifier
11. Characteristics
Table 7.
Characteristics
f = 1900 MHz; VCC = 5 V; Tamb = 25 C; input and output 50 ; Rbias = 5.1 k; unless otherwise specified. All RF parameters
are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for
f = 1900 MHz.
Symbol
Parameter
Conditions
Min Typ Max Unit
ICC
supply current
on state
36
48
60
mA
off state
-
2.8
-
mA
on state
17
18.5
20
dB
-
23
-
dB
-
0.50 0.70 dB
Gass
associated gain
NF
noise figure
PL(1dB)
output power at
1 dB gain compression
IP3O
output third-order intercept point
off state
[1]
-
18
-
dBm
32
36
-
dBm
30
34
-
dBm
on state
-
14.5
-
dB
off state
-
8.4
-
dB
-
23
-
dB
2-tone; tone spacing = 1 MHz;
Pi = 15 dBm per tone
[2]
2-tone; tone spacing = 1 MHz;
Pi = 15 dBm per tone
RLin
input return loss
RLout
output return loss
ISL
isolation
ts(pon)
power-on settling time
Pi = 20 dBm; SHDN (pin 6) from HIGH to LOW
[2]
ts(poff)
power-off settling time
Pi = 20 dBm; SHDN (pin 6) from LOW to HIGH
[2]
K
Rollett stability factor
both on state and off state up to f = 20 GHz
Rpd(SHDN) pull-down resistance on pin SHDN
[1]
Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
[2]
For TDD systems where fast switching is required, the value of C1 and C2 should be changed to 100 pF.
-
23
-
dB
-
1.4
-
s
-
0.4
-
s
1
-
-
-
20
-
k
Table 8.
Shutdown control
VCC = 5 V; Tamb = 25 C.
State
Vctrl(sd) [1]
Unit
on state
 0.6
V
off state
 1.2
V
[1]
Voltage on pin 6 (SHDN).
BGU8052
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
5 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
11.1 Graphs
DDD
DDD
*S
G%
*S
G%
I*+]
I*+]
VCC = 5 V; Tamb = 25 C.
VCC = 5 V; ICC = 48 mA.
(1) Tamb = 40 C
(1) ICC = 30 mA
(2) Tamb = +25 C
(2) ICC = 45 mA
(3) Tamb = +85 C
(3) ICC = 60 mA
Fig 3.
Power gain as a function of frequency;
typical values
Fig 4.
DDD
Power gain as a function of frequency;
typical values
DDD
1)
G%
1)
G%
I*+]
(1) ICC = 30 mA
(2) Tamb = +25 C
(2) ICC = 45 mA
(3) Tamb = +85 C
(3) ICC = 60 mA
Noise figure as a function of frequency;
typical values
BGU8052
Product data sheet
I*+]
VCC = 5 V; Tamb = 25 C.
VCC = 5 V; ICC = 48 mA.
(1) Tamb = 40 C
Fig 5.
Fig 6.
Noise figure as a function of frequency;
typical values
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Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
6 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
DDD
DDD
5/LQ
G%
5/RXW
G%
I*+]
VCC = 5 V; ICC = 48 mA.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Input return loss as a function of frequency;
typical values
Fig 8.
DDD
VSDUV
G%
I*+]
VCC = 5 V; ICC = 48 mA.
(1) Tamb = 40 C
Fig 7.
Output return loss as a function of frequency;
typical values
DDD
.
6
6
6
6
I*+]
VCC = 5 V; Tamb = 25 C; ICC = 48 mA.
I*+]
VCC = 5 V; ICC = 48 mA.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
Fig 9.
Wideband S-parameters as function of
frequency; typical values
BGU8052
Product data sheet
Fig 10. Rollett stability factor as a function of
frequency; typical values
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Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
7 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
DDD
,32
G%P
DDD
,32
G%P
I*+]
VCC= 5 V; Pi = 15 dBm per tone; ICC = 48 mA.
(1) f = 1500 MHz
(2) Tamb = +25 C
(2) f = 1900 MHz
(3) Tamb = +85 C
(3) f = 2500 MHz
DDD
DDD
3/G%
G%P
Fig 12. Output third-order intercept point as a function
of supply current; typical values
3/G%
G%P
,&&P$
VCC = 5 V; Pi = 15 dBm per tone; Tamb = 25 C.
(1) Tamb = 40 C
Fig 11. Output third-order intercept point as a function
of frequency; typical values
I*+]
(1) Tamb = 40 C
(1) f = 1500 MHz
(2) Tamb = +25 C
(2) f = 1900 MHz
(3) Tamb = +85 C
(3) f = 2500 MHz
Fig 13. Output power at 1 dB gain compression as a
function of frequency; typical values
Product data sheet
,&&P$
VCC = 5 V; Tamb = 25 C.
VCC = 5 V; ICC = 48 mA.
BGU8052
Fig 14. Output power at 1 dB gain compression as a
function of supply current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
8 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
DDD
OFF
P$
5ELDVNȍ
Tamb =25 C
(1) VCC = 3.0 V
(2) VCC = 3.3 V
(3) VCC= 4.0 V
(4) VCC = 4.5 V
(5) VCC = 5 V
Fig 15.
BGU8052
Product data sheet
ICC as a function of Rbias, typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
9 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
*1'
9FWUOVG
9&&
12. Application information
&
5
5ELDV
&
&
5)LQ
/
&
5)RXW
&
DDD
See Table 9 for a list of components.
Fig 16. Schematic of application board
Table 9.
List of components
See Figure 16 for schematics.
Component
Description
Value
C1, C2
capacitor
100 nF
C3
capacitor
10 pF
C4
capacitor
5.6 nF
C5
capacitor
10 pF
L1
inductor
15 nH
R1
resistor
10 
Rbias
resistor
5.1 k
VCC = 5 V
2.3 k
VCC = 3.3 V
100 pF
BGU8052
Product data sheet
Remarks
recommended for TDD systems
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
10 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
Table 10. Typical performance BGU8052 application board VCC = 5 V
All RF parameters are measured at the application board as shown in Figure 16 with the components as listed in Table 9
while optimized for: f = 1900 MHz; VCC = 5 V; ICC = 48 mA and Tamb = 25 C.
Symbol Parameter
Conditions
f (MHz)
1500 1750 1850 1900 1950 2100 2300 2500
G
gain
20.5 19.2 18.7 18.4 18.2 17.6 16.8 16.0
RLin
input return loss
12.4 13.8 14.3 14.5 14.7 15.2 16.0 16.5
RLout
output return loss
23.0 23.7 23.4 23.2 23.0 22.5 22.0 22.0
PL(1dB)
output power at 1 dB gain compression
18.5 18.9 18.5 19.0 18.0 18.8 18.2 17.2
IP3O
output third-order intercept point
NF
noise figure
[1]
36.8 36.2 36.3 36.3 36.0 36.3 35.6 35.4
[1][2]
37.5 37.4 37.2 37.0 36.7 35.7 36.5 35.3
[3]
0.44 0.43 0.46 0.48 0.49 0.53 0.57 0.61
[1]
2-Tone; tone spacing = 1 MHz, Po = 5 dBm per tone.
[2]
For applications where fast switching is required, the value of C1 and C2 should be changed to 100 pF.
[3]
Connector and board losses not de-embedded.
Table 11. Typical performance BGU8052 application board VCC = 3.3 V
All RF parameters measured at application board shown in Figure 16. The components listed in Table 9 optimized for 1900
MHz; VCC =3.3 V; ICC= 48 mA; Tamb = 25C.
Symbol Parameter
Conditions
f (MHz)
1500 1750 1850 1900 1950 2100 2300 2500
G
gain
20.5 19.2 18.7 18.4 18.2 17.6 16.8 16.5
RLin
input return loss
12.3 13.9 14.5 14.7 14.5 14.8 15.3 15.5
RLout
output return loss
21.6 23.5 24.0 23.8 23.3 22.6 21.2 20.4
PL(1dB)
output power at 1 dB gain compression
IP3O
NF
output third-order intercept point
noise figure
16.2 16.0 16.0 16.2 15.8 15.8 15.5 14.9
[1]
33.3 32.9 31.9 32.5 32.0 31.6 30.6 31.1
[1][2]
31.8 31.6 31.2 31.0 31.2 30.6 30.5 29.5
[3]
0.42 0.47 0.48 0.49 0.50 0.53 0.56 0.58
[1]
2 tone; spacing 1 MHz, Po = 5 dBm per tone.
[2]
For applications where fast switching is required, the value of C1 and C2 should be changed to 100 pF.
[3]
Connector and board losses not de-embedded.
BGU8052
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
11 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
13. Package outline
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Fig 17. Package outline SOT1327-1 (HWSON8)
BGU8052
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
12 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
14. Abbreviations
Table 12.
Abbreviations
Acronym
Description
CDMA
Code Division Multiple Access
ESD
ElectroStatic Discharge
FDD
Frequency-Division Duplexing
GSM
Global System for Mobile Communication
LNA
Low Noise Amplifier
LTE
Long-Term Evolution
RF
Radio Frequency
TDD
Time-Division Duplexing
W-CDMA
Wideband Code Division Multiple Access
15. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU8052 v.3
20160405
Product data sheet
-
BGU8052 v.2
Modifications:
BGU8052 v.2
Modifications:
BGU8052 v.1
BGU8052
Product data sheet
•
•
•
•
•
3 V to 5 V single supply added to Features and benefits
Figure 1 “Block diagram” on page 2 added
An additional curve added to Figure 14 on page 8
Added remark to Rbias in Table 9 on page 10
Table 11 on page 11 added
20131230
•
•
Product data sheet
-
BGU8052 v.1
Table 4 on page 3: The maximum value for Vctrl(sd) has been corrected to 3 V.
Table 10 on page 11: A correction has been made for the value of Gass at f = 1750 MHz.
20131127
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
-
© NXP Semiconductors N.V. 2016. All rights reserved.
13 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU8052
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
14 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BGU8052
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
15 of 16
BGU8052
NXP Semiconductors
Low noise high linearity amplifier
18. Contents
1
2
3
4
5
6
7
7.1
7.2
8
9
10
11
11.1
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application information. . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2016.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 April 2016
Document identifier: BGU8052