21
BGU8062
+9
6
Low noise high linearity amplifier
Rev. 1 — 9 September 2015
Product data sheet
1. Product profile
1.1 General description
The BGU8062 is a high linearity bypass amplifier for wireless infrastructure applications,
equipped with fast shutdown to support TDD systems. The LNA has a high input and
output return loss and is designed to operate between 1.5 GHz and 2.7 GHz. It is housed
in a 3 mm 3 mm 0.85 mm 10-terminal plastic thin small outline package. The LNA is
ESD protected on all terminals.
1.2 Features and benefits
Low noise performance: NF = 1.3 dB
High linearity performance: IP3O = 36 dBm
High input return loss > 12 dB
High output return loss > 15 dB
Unconditionally stable up to 20 GHz
Small 10-terminal leadless package 3 mm 3 mm 0.85 mm
ESD protection on all terminals
Moisture sensitivity level 1
Fast shut down to support TDD systems
+5 V single supply
1.3 Applications
Wireless infrastructure
Low noise and high linearity applications
LTE, W-CDMA, CDMA, GSM
General-purpose wireless applications
TDD or FDD systems
Suitable for small cells
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
1.4 Quick reference data
Table 1.
Quick reference data
f = 1900 MHz; VCC = 5 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF parameters are measured
on an application board with the circuit as shown in Figure 28 and components listed in Table 9 implemented. This board is
optimized for f = 1900 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICC
supply current
LNA enable; bypass off
-
70
85
mA
LNA disable; bypass on
-
3
5
mA
LNA enable; bypass off
17
18.5
20
dB
2.0 1.6
-
dB
-
2.0
dB
18.5 20
-
dBm
LNA enable; bypass off
33.5 36
-
dBm
LNA disable; bypass on
-
-
dBm
Gass
associated gain
NF
noise figure
LNA enable; bypass off
PL(1dB)
output power at 1 dB gain compression
LNA enable; bypass off
IP3O
output third-order intercept point
2-tone; tone spacing = 1 MHz;
PL = 5 dBm per tone
LNA disable; bypass on
[1]
[1]
1.3
44
Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
2. Pinning information
2.1 Pinning
WHUPLQDO
LQGH[DUHD
9&75/
9&75/
LF
LF
5)B,1
5)B287
LF
QF
QF
9&&
%*8
DDD
7UDQVSDUHQWWRSYLHZ
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
BGU8062
Product data sheet
Pin description
Pin
Description
VCTRL2 1
voltage control 2
i.c.
2, 4, 9
internally connected, can be grounded or left open in the application
RF_IN
3
RF input
n.c.
5
not connected
VCC
6
supply voltage
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BGU8062
NXP Semiconductors
Low noise high linearity amplifier
Table 2.
Pin description …continued
Symbol
Pin
Description
n.c.
7
not connected
RF_OUT 8
RF output
VCTRL1 10
voltage control 1
GND
exposed die pad ground
3. Ordering information
Table 3.
Ordering information
Type
number
Package
Name
Description
Version
BGU8062
HVSON10
plastic thermal enhanced very thin small outline package;
no leads; 10 terminals; body 3 3 0.85 mm
SOT650-2
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). See Section 12.3 “Disclaimers”, paragraph
“Limiting values”.
Symbol
Parameter
Conditions
VCC
supply voltage
Min Max
Unit
-
6
V
VI(CTRL1) input voltage on pin CTRL1
-
3.6
V
VI(CTRL2) input voltage on pin CTRL2
-
3.6
V
20
dBm
Pi(RF)CW
continuous waveform RF input power
-
Tstg
storage temperature
40 +150 C
Tj
junction temperature
-
150
C
-
510
mW
P
power dissipation
Tcase 125 C
VESD
electrostatic discharge voltage
Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001-2010
-
2.0
kV
Charged Device Model (CDM); According
to JEDEC standard 22-C101B
-
1.0
kV
Min
Typ
Max
Unit
[1]
[1]
Case is ground solder pad.
5. Recommended operating conditions
Table 5.
BGU8062
Product data sheet
Characteristics
Symbol
Parameter
Conditions
VCC
supply voltage
4.75
5
5.25
V
Z0
characteristic impedance
-
50
-
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BGU8062
NXP Semiconductors
Low noise high linearity amplifier
6. Thermal characteristics
Table 6.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
[1][2]
thermal resistance from junction to case
Typ
Unit
55
K/W
[1]
Case is ground solder pad.
[2]
Thermal resistance measured using infrared measurement technique, device mounted on application board
and placed in still air.
7. Characteristics
Table 7.
Characteristics
f = 1900 MHz; VCC = 5 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF parameters are measured
on an application board with the circuit as shown in Figure 28 and components listed in Table 9 implemented. This board is
optimized for f = 1900 MHz.
Symbol Parameter
supply current
ICC
Gass
Gflat
associated gain
gain flatness
Conditions
Min
Typ
Max Unit
LNA enable; bypass off
-
70
85
mA
LNA disable; bypass on
-
3
5
mA
LNA enable; bypass off
17
18.5 20
dB
LNA disable; bypass on
2.0
1.6 -
dB
f = 2600 MHz; LNA enable; bypass off
14
15.5 17
dB
-
0.6
-
dB
-
0.5
-
dB
within 100 MHz bandwidth; LNA enable; bypass off
1500 MHz f 2700 MHz
1900 MHz f 2700 MHz
[1]
NF
noise figure
LNA enable; bypass off
-
1.3
2.0
dB
G
gain variation
1900 MHz f 2700 MHz
-
3.1
-
dB
PL(1dB)
output power at
1 dB gain compression
LNA enable; bypass off
18.5
20
-
dBm
IP3O
output third-order intercept
point
2-tone; tone spacing = 1 MHz; PL = 5 dBm per tone
LNA enable; bypass off
33.5
36
-
dBm
LNA disable; bypass on
34
44
-
dBm
LNA enable; bypass off
-
12
-
dB
LNA disable; bypass on
-
15
-
dB
-
15
-
dB
LNA disable; bypass off
20
30
-
dB
LNA enable; bypass off
15
20
-
dB
RLin
input return loss
RLout
output return loss
ISL
isolation
ts(pon)
power-on settling time
Pi = 20 dBm
-
0.8
1.0
s
ts(poff)
power-off settling time
Pi = 20 dBm
-
0.8
1.0
s
K
Rollett stability factor
both on state and off state up to f = 20 GHz
1
-
-
[1]
Connector and Printed-Circuit Board (PCB) losses have been de-embedded.
BGU8062
Product data sheet
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Rev. 1 — 9 September 2015
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BGU8062
NXP Semiconductors
Low noise high linearity amplifier
Table 8.
Control truth table
VCC = 5 V; Tamb = 25 C.
Control signal setting [1]
Mode of operation
CTRL2 (pin 1)
CTRL1 (pin 10)
LNA
bypass
HIGH
LOW
disable
on
HIGH
HIGH
disable
on
LOW
LOW
enable
off
LOW
HIGH
disable
off
[1]
A logic LOW is the result of an input voltage on that specific pin between 0.3 V and +0.7 V.
A logic HIGH is the result of an input voltage on that specific pin between 1.2 V and 3.6 V.
7.1 Graphs
DDD
*S
G%
DDD
*S
G%
I*+]
(1) Tamb = 40 C
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Power gain as a function of frequency;
typical values
BGU8062
Product data sheet
I*+]
Tamb = 25 C; gain mode.
VCC = 5 V; gain mode.
Fig 2.
Fig 3.
Power gain as a function of frequency;
typical values
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Rev. 1 — 9 September 2015
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5 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
DDD
*S
G%
DDD
*S
G%
I*+]
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Power gain as a function of frequency;
typical values
Fig 5.
I*+]
Power gain as a function of frequency;
typical values
DDD
1)
G%
DDD
1)
G%
I*+]
(1) Tamb = 40 C
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Noise figure as a function of frequency; typical
values
BGU8062
Product data sheet
I*+]
Tamb = 25 C; gain mode.
VCC = 5 V; gain mode.
Fig 6.
Tamb = 25 C; bypass mode.
VCC = 5 V; bypass mode.
(1) Tamb = 40 C
Fig 4.
Fig 7.
Noise figure as a function of frequency; typical
values
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Rev. 1 — 9 September 2015
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6 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
DDD
5/LQ
G%
DDD
5/LQ
G%
I*+]
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Input return loss as a function of frequency;
typical values
Fig 9.
5/LQ
G%
5/LQ
G%
I*+]
I*+]
Tamb = 25 C; bypass mode.
VCC = 5 V; bypass mode.
(1) Tamb = 40 C
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Fig 10. Input return loss as a function of frequency;
typical values
Product data sheet
I*+]
DDD
BGU8062
Input return loss as a function of frequency;
typical values
DDD
Tamb = 25 C; gain mode.
VCC = 5 V; gain mode.
(1) Tamb = 40 C
Fig 8.
Fig 11. Input return loss as a function of frequency;
typical values
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7 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
DDD
5
5/RXW
G%
DDD
5
5/RXW
G%
I*+]
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Fig 12. Output return loss as a function of frequency;
typical values
I*+]
DDD
5
5/RXW
G%
5
5/RXW
G%
I*+]
I*+]
Tamb = 25 C; bypass mode.
VCC = 5 V; bypass mode.
(1) Tamb = 40 C
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Fig 14. Output return loss as a function of frequency;
typical values
Product data sheet
Fig 13. Output return loss as a function of frequency;
typical values
DDD
BGU8062
Tamb = 25 C; gain mode.
VCC = 5 V; gain mode.
(1) Tamb = 40 C
Fig 15. Output return loss as a function of frequency;
typical values
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Rev. 1 — 9 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
DDD
,6/
G%
DDD
,6/
G%
I*+]
I*+]
Tamb = 25 C; isolation mode.
VCC = 5 V; isolation mode.
(1) Tamb = 40 C
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Fig 16. Isolation as a function of frequency; typical
values
Fig 17. Isolation as a function of frequency; typical
values
DDD
VSDUV
G%
DDD
VSDUV
G%
I*+]
VCC = 5 V; Tamb = 25 C; gain mode.
(1) S11
(1) S11
(2) S21
(3) S12
(3) S12
(4) S22
(4) S22
Fig 18. Wideband S-parameters as a function of
frequency; typical values
Product data sheet
I*+]
VCC = 5 V; Tamb = 25 C; bypass mode.
(2) S21
BGU8062
Fig 19. Wideband S-parameters as a function of
frequency; typical values
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Rev. 1 — 9 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
DDD
VSDUV
G%
DDD
.
I*+]
VCC = 5 V; Tamb = 25 C; isolation mode.
I*+]
VCC = 5 V; gain mode.
(1) S11
(1) Tamb = 40 C
(2) S21
(2) Tamb = +25 C
(3) S12
(3) Tamb = +95 C
(4) S22
Fig 20. Wideband S-parameters as a function of
frequency; typical values
DDD
,32
G%P
Fig 21. Rollett stability factor as a function of
frequency; typical values
DDD
,32
G%P
I*+]
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Fig 22. Output third-order intercept point as a function
of frequency; typical values
Product data sheet
I*+]
Tamb = 25 C; gain mode.
VCC = 5 V; gain mode.
(1) Tamb = 40 C
BGU8062
Fig 23. Output third-order intercept point as a function
of frequency; typical values
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Rev. 1 — 9 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
DDD
,32
G%P
DDD
,32
G%P
I*+]
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Fig 24. Output third-order intercept point as a function
of frequency; typical values
DDD
3/G%
G%P
I*+]
DDD
3/G%
G%P
I*+]
I*+]
Tamb = 25 C; gain mode.
VCC = 5 V; gain mode.
(1) Tamb = 40 C
(1) VCC = 4.75 V
(2) Tamb = +25 C
(2) VCC = 5.0 V
(3) Tamb = +95 C
(3) VCC = 5.25 V
Fig 26. Output power at 1 dB gain compression as a
function of frequency; typical values
Product data sheet
Fig 25. Output third-order intercept point as a function
of frequency; typical values
BGU8062
Tamb = 25 C; bypass mode.
VCC = 5 V; bypass mode.
(1) Tamb = 40 C
Fig 27. Output power at 1 dB gain compression as a
function of frequency; typical values
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Rev. 1 — 9 September 2015
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11 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
8. Application information
9&75/
9&75/ *1'
9&&
&
&
5
5
&
&
5)LQ
&
/
&
5)RXW
&
H[SRVHG
GLHSDG
DDD
See Table 9 for a list of components.
Fig 28. Schematic of application board BGU8062
Table 9.
List of components
See Figure 28 for schematics.
BGU8062
Product data sheet
Component
Description
Value
C1
capacitor
100 nF
C2, C3
capacitor
100 pF
C4
capacitor
1 nF
C5
capacitor
-
C6
capacitor
10 nF
C7
capacitor
1 F
L1
inductor
15 nH
R1, R2
resistor
1 k
Remarks
optional
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Rev. 1 — 9 September 2015
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BGU8062
NXP Semiconductors
Low noise high linearity amplifier
9. Package outline
+9621SODVWLFWKHUPDOHQKDQFHGYHU\WKLQVPDOORXWOLQHSDFNDJHQROHDGV
WHUPLQDOV[[PP
627
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'
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$
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GHWDLO;
WHUPLQDO
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5HIHUHQFHV
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YHUVLRQ
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-('(&
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627
02
VRWBSR
(XURSHDQ
SURMHFWLRQ
,VVXHGDWH
Fig 29. Package outline SOT650-2 (HVSON10)
BGU8062
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BGU8062
NXP Semiconductors
Low noise high linearity amplifier
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CDMA
Code Division Multiple Access
ESD
ElectroStatic Discharge
FDD
Frequency-Division Duplexing
GSM
Global System for Mobile Communication
LNA
Low Noise Amplifier
LTE
Long-Term Evolution
TDD
Time-Division Duplexing
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU8062 v.1
20150909
Product data sheet
-
-
BGU8062
Product data sheet
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BGU8062
NXP Semiconductors
Low noise high linearity amplifier
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU8062
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 September 2015
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15 of 17
BGU8062
NXP Semiconductors
Low noise high linearity amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGU8062
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BGU8062
NXP Semiconductors
Low noise high linearity amplifier
14. Contents
1
1.1
1.2
1.3
1.4
2
2.1
2.2
3
4
5
6
7
7.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 September 2015
Document identifier: BGU8062