+/
4)
1
5
BGU7061
Analog high linearity low noise variable gain amplifier
Rev. 2 — 29 January 2015
Product data sheet
1. Product profile
1.1 General description
The BGU7061 is a fully integrated analog-controlled variable gain amplifier module. Its
low noise and high linearity performance makes it ideal for sensitive receivers in cellular
base station applications. The BGU7061 is operating in the 770 MHz to 915 MHz
frequency range and has a gain control range of more than 35 dB. At maximum gain the
noise figure is 0.74 dB. The gain is analog-controlled having maximum gain at 0 V and
minimum gain at 3.3 V. The LNA can be bypassed extending the dynamic range. The
BGU7061 is internally matched to 50 ohm, meaning no external matching is required,
enabling ease of use. It is housed in a 16 pins 8 mm 8 mm 1.3 mm leadless
HLQFN16R package SOT1301.
1.2 Features and benefits
Input and output internally matched to 50
Low noise figure of 0.74 dB
High input IP3 of 2 dBm
High Pi(1dB) of 12.5 dBm
Bypass mode of LNA giving high dynamic gain range
Gain control range of 0 dB to 35 dB
Single 5 V supply
Single analog gain control of 0 V to 3.3 V
Unconditionally stable up to 12.75 GHz
Moisture sensitivity level 3
ESD protection at all pins
1.3 Applications
Cellular base stations, remote radio heads
3G, LTE infrastructure
Low noise applications with variable gain and high linearity requirements
Active antenna
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
1.4 Quick reference data
Table 1.
Quick reference data
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
f = 900 MHz
ICC(tot)
NF
total supply current
noise figure
input third-order intercept point
IP3I
Pi(1dB)
input power at 1 dB gain
compression
high gain mode
[1]
197
229
267
mA
low gain mode
[2]
175
199
230
mA
Vctrl(Gp) = 0 V (maximum power gain)
[1]
-
0.74
-
dB
Gp = 35 dB
[1]
-
0.87
1.05
dB
Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz
[1]
1
2.0
-
dBm
Gp = 35 dB
[1]
13.5 12.5 -
dBm
high gain mode
[1]
197
229
267
mA
low gain mode
[2]
175
199
230
mA
Vctrl(Gp) = 0 V (maximum power gain)
[1]
-
0.64
-
dB
Gp = 35 dB
[1]
-
0.86
1.05
dB
Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz
[1]
0
1.3
-
dBm
Gp = 35 dB
[1]
13.5 12.4 -
dBm
high gain mode
[1]
197
229
267
mA
low gain mode
[2]
175
199
230
mA
Vctrl(Gp) = 0 V (maximum power gain)
[1]
-
0.61
-
dB
f = 788 MHz
ICC(tot)
NF
total supply current
noise figure
input third-order intercept point
IP3I
Pi(1dB)
input power at 1 dB gain
compression
f = 830 MHz
ICC(tot)
NF
total supply current
noise figure
Gp = 35 dB
[1]
-
0.75
1.05
dB
IP3I
input third-order intercept point
Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz
[1]
0.5
1.5
-
dBm
Pi(1dB)
input power at 1 dB gain
compression
Gp = 35 dB
[1]
13.5 12.4 -
dBm
high gain mode
[1]
197
229
267
mA
low gain mode
[2]
175
199
230
mA
Vctrl(Gp) = 0 V (maximum power gain)
[1]
-
0.64
-
dB
f = 850 MHz
ICC(tot)
NF
total supply current
noise figure
Gp = 35 dB
[1]
-
0.77
1.05
dB
IP3I
input third-order intercept point
Gp = 35 dB; 2-tone; tone-spacing = 1.0 MHz
[1]
0.5
1.6
-
dBm
Pi(1dB)
input power at 1 dB gain
compression
Gp = 35 dB
[1]
13.5 12.4 -
dBm
[1]
high gain mode: GS1 = LOW; GS2 = HIGH (see Table 15)
[2]
low gain mode: GS1 = HIGH; GS2 = LOW (see Table 15)
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
2. Pinning information
*1'
9&&
9&&
*1'
WHUPLQDO
LQGH[DUHD
2.1 Pinning
*6
QF
QF
9FWUO*S
*1'
LF
QF
*1'
5)B287
*6
QF
5)B,1
DDD
7UDQVSDUHQWWRSYLHZ
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
RF_IN
1
RF input
GND
2, 11, 13, 16
ground
GS1
3
gain switch control 1
n.c.
4, 5, 7, 10
not connected, internally open
GS2
6
gain switch control 2
i.c.
8
internally connected to ground
Vctrl(Gp)
9
power gain control voltage
RF_OUT
12
RF output
VCC2
14
supply voltage 2
VCC1
15
supply voltage 1
3. Ordering information
Table 3.
Ordering information
Type number
BGU7061
BGU7061
Product data sheet
Package
Name
Description
Version
HLQFN16R
plastic thermal enhanced low quad flat package;
no leads; 16 terminals; body 8 8 1.3 mm
SOT1301-1
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
5)B,1
9&&
9&&
*1'
WHUPLQDO
LQGH[DUHD
*1'
4. Functional diagram
5)B287
*1'
%<3$663$7+
*1'
*6
QF
QF
9FWUO*S
9*$
QF
*6
QF
LF
/1$
DDD
Fig 2.
BGU7061
Product data sheet
Functional diagram
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max
Unit
VCC
supply voltage
0
6
V
Vctrl(Gp)
power gain control voltage
1
+3.6
V
VI(GS1)
input voltage on pin GS1
1
+3.6
V
VI(GS2)
input voltage on pin GS2
1
+3.6
V
Pi(RF)CW continuous waveform RF input power
Vctrl(Gp) = 0 V; 777 MHz f 915 MHz
high gain mode
[1]
-
10
dBm
low gain mode
[2]
-
15
dBm
150
C
Tj
junction temperature
-
Tstg
storage temperature
40 +150 C
VESD
electrostatic discharge voltage
Human Body Model (HBM); according to
ANSI/ESDA-JEDEC JS-001-2020-Device Testing,
Human Body Model
-
2
Charged Device Model (CDM); according to
JEDEC standard 22-C101
-
750 V
[1]
high gain mode: GS1 = LOW; GS2 = HIGH (see Table 15)
[2]
low gain mode: GS1 = HIGH; GS2 = LOW (see Table 15)
kV
6. Recommended operating conditions
Table 5.
Recommended operating conditions
Symbol
Parameter
VCC1
Conditions
Min
Typ
Max
Unit
supply voltage 1
4.75
5
5.25
V
VCC2
supply voltage 2
4.75
5
5.25
V
Vctrl(Gp)
power gain control voltage
0
-
3.3
V
VI(GS1)
input voltage on pin GS1
0
-
3.3
V
VI(GS2)
input voltage on pin GS2
0
-
3.3
V
Z0
characteristic impedance
-
50
-
Tcase
case temperature
40
-
+85
C
7. Thermal characteristics
Table 6.
Symbol
Rth(j-case)
[1]
BGU7061
Product data sheet
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to case
[1]
Typ
Unit
42
K/W
The case temperature is measured at the ground solder pad.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
8. Characteristics
8.1 Characteristics at f = 900 MHz
Table 7.
Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 900 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Min
Typ
Max
Unit
197
229
267
mA
Vctrl(Gp) = 3.3 V
-
12.7
-
dB
Vctrl(Gp) = 0 V
-
36.7
-
dB
power gain flatness
880 MHz f 915 MHz; 18 dB Gp 35 dB
-
0.0
-
dB
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.74
-
dB
Gp = 35 dB
-
0.87
1.05
dB
Gp = 18 dB
-
6.47
-
dB
Gp = 35 dB
1
2.0
-
dBm
Gp = 30 dB
-
4.8
-
dBm
Gp = 29 dB
-
5.0
-
dBm
-
6.3
ICC(tot)
total supply current
Gp(min)
minimum power gain
Gp(max)
maximum power gain
Gp(flat)
NF
IP3I
input third-order intercept point
Conditions
2-tone; tone-spacing = 1.0 MHz
Gp = 18 dB
Pi(1dB)
RLin
input power at 1 dB
gain compression
input return loss
-
dBm
Gp = 35 dB
13.5 12.5 -
dBm
Gp = 30 dB
-
7.6
-
dBm
Gp = 29 dB
-
6.8
-
dBm
Gp = 18 dB
-
4.8
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
30.5
-
dB
Gp = 35 dB
-
28.0
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
17.5
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
Table 8.
Characteristics low gain mode
GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 900 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ
Max Unit
175 199
230
mA
5.9
-
dB
-
18.3
-
dB
880 MHz f 915 MHz; 3 dB Gp 17 dB
-
0.0
-
dB
Gp = 17 dB
-
11.2
-
dB
-
22.9
-
dB
ICC(tot)
total supply current
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
Gp(flat)
power gain flatness
NF
noise figure
Gp = 3 dB
IP3I
input third-order intercept point
BGU7061
Product data sheet
2-tone; tone-spacing = 1.0 MHz
-
Gp = 17 dB
-
21.4
-
dBm
Gp = 12 dB
-
26.5
-
dBm
Gp = 11 dB
-
27.4
-
dBm
Gp = 3 dB
-
31.2
-
dBm
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
Table 8.
Characteristics low gain mode …continued
GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 900 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ
Max Unit
Pi(1dB)
Gp = 17 dB
-
5.6
-
Gp = 12 dB
-
10.4
-
dBm
Gp = 11 dB
-
11.1
-
dBm
Gp = 3 dB
-
13.2
-
dBm
-
25.1
-
dB
input power at 1 dB gain compression
dBm
RLin
input return loss
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 17 dB
-
22.7
-
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
18.3
-
dB
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
8.2 Characteristics at f = 788 MHz
Table 9.
Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 788 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Min
Typ
Max
Unit
197
229
267
mA
Vctrl(Gp) = 3.3 V
-
12.6
-
dB
Vctrl(Gp) = 0 V
-
37.3
-
dB
power gain flatness
777 MHz f 798 MHz; 18 dB Gp 35 dB
-
0.1
-
dB
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.64
-
dB
Gp = 35 dB
-
0.86
1.05
dB
Gp = 18 dB
-
6.27
-
dB
Gp = 35 dB
0
1.3
-
dBm
Gp = 30 dB
-
3.5
-
dBm
Gp = 29 dB
-
3.7
-
dBm
-
5.5
ICC(tot)
total supply current
Gp(min)
minimum power gain
Gp(max)
maximum power gain
Gp(flat)
NF
IP3I
input third-order intercept point
Conditions
2-tone; tone-spacing = 1.0 MHz
Gp = 18 dB
Pi(1dB)
RLin
input power at 1 dB
gain compression
input return loss
-
dBm
Gp = 35 dB
13.5 12.4 -
dBm
Gp = 30 dB
-
7.8
-
dBm
Gp = 29 dB
-
7.1
-
dBm
Gp = 18 dB
-
5.6
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
20.0
-
dB
Gp = 35 dB
-
20.5
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
18.6
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
Table 10. Characteristics low gain mode
GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 788 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ
Max Unit
175 199
230
mA
5.9
-
dB
-
18.8
-
dB
777 MHz f 798 MHz; 3 dB Gp 17 dB
-
0.0
-
dB
Gp = 17 dB
-
11.4
-
dB
-
22.9
-
dB
ICC(tot)
total supply current
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
Gp(flat)
power gain flatness
NF
noise figure
Gp = 3 dB
IP3I
Pi(1dB)
RLin
input third-order intercept point
2-tone; tone-spacing = 1.0 MHz
input power at 1 dB gain compression
input return loss
-
Gp = 17 dB
-
21.0
-
dBm
Gp = 12 dB
-
25.7
-
dBm
Gp = 11 dB
-
26.8
-
dBm
Gp = 3 dB
-
32.1
-
dBm
Gp = 17 dB
-
5.8
-
dBm
Gp = 12 dB
-
10.5
-
dBm
Gp = 11 dB
-
11.2
-
dBm
Gp = 3 dB
-
13.9
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
25.6
-
dB
Gp = 17 dB
-
25.8
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
21.0
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
8.3 Characteristics at f = 830 MHz
Table 11. Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 830 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
197
229
267
mA
-
dB
ICC(tot)
total supply current
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
12.7
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
36.8
-
dB
Gp(flat)
power gain flatness
815 MHz f 840 MHz; 18 dB Gp 35 dB
-
0.1
-
dB
NF
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.61
-
dB
Gp = 35 dB
-
0.75
1.05
dB
Gp = 18 dB
-
5.49
-
dB
Gp = 35 dB
0.5
1.5
-
dBm
Gp = 30 dB
-
4.0
-
dBm
Gp = 29 dB
-
4.3
-
dBm
Gp = 18 dB
-
6.0
-
dBm
IP3I
input third-order intercept point
BGU7061
Product data sheet
2-tone; tone-spacing = 1.0 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
Table 11. Characteristics high gain mode …continued
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 830 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Pi(1dB)
Gp = 35 dB
13.5 12.4 -
Gp = 30 dB
-
7.6
-
dBm
Gp = 29 dB
-
6.9
-
dBm
Gp = 18 dB
-
4.8
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
24.0
-
dB
input power at 1 dB
gain compression
Typ
Max
Unit
dBm
RLin
input return loss
Gp = 35 dB
-
24.8
-
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
18.0
-
dB
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
Table 12. Characteristics low gain mode
GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 830 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ
Max Unit
175 199
230
mA
ICC(tot)
total supply current
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
6.1
-
dB
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
18.4
-
dB
Gp(flat)
power gain flatness
815 MHz f 840 MHz; 3 dB Gp 17 dB
-
0.0
-
dB
NF
noise figure
Gp = 17 dB
-
10.4
-
dB
Gp = 3 dB
-
22.0
-
dB
IP3I
input third-order intercept point
2-tone; tone-spacing = 1.0 MHz
Pi(1dB)
RLin
input power at 1 dB gain compression
input return loss
-
Gp = 17 dB
-
21.7
-
dBm
Gp = 12 dB
-
26.9
-
dBm
Gp = 11 dB
-
27.7
-
dBm
Gp = 3 dB
-
31.4
-
dBm
Gp = 17 dB
-
5.8
-
dBm
Gp = 12 dB
-
10.5
-
dBm
Gp = 11 dB
-
11.9
-
dBm
Gp = 3 dB
-
13.6
-
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
25.5
-
dB
Gp = 17 dB
-
24.0
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
19.4
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
8.4 Characteristics at f = 850 MHz
Table 13. Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 850 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ICC(tot)
total supply current
197
229
267
mA
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
12.7
-
dB
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
36.7
-
dB
Gp(flat)
power gain flatness
825 MHz f 865 MHz; 18 dB Gp 35 dB
-
0.1
-
dB
NF
noise figure
Vctrl(Gp) = 0 V (maximum power gain)
-
0.64
-
dB
Gp = 35 dB
-
0.77
1.05
dB
Gp = 18 dB
-
5.54
-
dB
IP3I
Pi(1dB)
RLin
input third-order intercept point
input power at 1 dB
gain compression
input return loss
2-tone; tone-spacing = 1.0 MHz
Gp = 35 dB
0.5
1.6
-
dBm
Gp = 30 dB
-
4.5
-
dBm
Gp = 29 dB
-
4.7
-
dBm
Gp = 18 dB
-
6.0
-
dBm
Gp = 35 dB
13.5 12.4 -
Gp = 30 dB
-
7.6
-
dBm
Gp = 29 dB
-
6.9
-
dBm
Gp = 18 dB
-
5.1
-
dBm
dBm
Vctrl(Gp) = 0 V (maximum power gain)
-
25.1
-
dB
Gp = 35 dB
-
26.5
-
dB
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
17.5
-
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
Table 14. Characteristics low gain mode
GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 850 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ
Max Unit
175 199
ICC(tot)
total supply current
230
mA
Gp(min)
minimum power gain
Vctrl(Gp) = 3.3 V
-
6.0
-
dB
Gp(max)
maximum power gain
Vctrl(Gp) = 0 V
-
18.3
-
dB
Gp(flat)
power gain flatness
825 MHz f 865 MHz; 3 dB Gp 17 dB
-
0.0
-
dB
NF
noise figure
Gp = 17 dB
-
10.4
-
dB
Gp = 3 dB
-
22.1
-
dB
IP3I
input third-order intercept point
BGU7061
Product data sheet
2-tone; tone-spacing = 1.0 MHz
-
Gp = 17 dB
-
21.6
-
dBm
Gp = 12 dB
-
26.5
-
dBm
Gp = 11 dB
-
27.5
-
dBm
Gp = 3 dB
-
31.4
-
dBm
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
Table 14. Characteristics low gain mode …continued
GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 850 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ
Max Unit
Pi(1dB)
Gp = 17 dB
-
5.7
-
Gp = 12 dB
-
10.5
-
dBm
Gp = 11 dB
-
11.2
-
dBm
Gp = 3 dB
-
13.5
-
dBm
-
25.1
-
dB
input power at 1 dB gain compression
dBm
RLin
input return loss
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 17 dB
-
23.5
-
dB
RLout
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
-
18.7
-
dB
K
Rollett stability factor
0 GHz f 12.75 GHz
1
-
-
8.5 Gain switch truth table
Table 15. Gain switch truth table
VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C
Gain mode
GS1
GS2
logic
VGS1
logic
VGS2
high gain mode
LOW
0 V to 0.5 V
HIGH
2 V to 3.3 V
low gain mode
HIGH
2 V to 3.3 V
LOW
0 V to 0.5 V
8.6 Graphs
DDD
*S
G%
DDD
*S
G%
I*+]
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Power gain as a function of frequency in high
gain mode; typical values
BGU7061
Product data sheet
I*+]
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
(2) Tamb = +25 C
Fig 3.
Fig 4.
Power gain as a function of frequency in low
gain mode; typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
5/LQ
G%
DDD
5/LQ
G%
I*+]
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Input return loss as a function of frequency in
high gain mode; typical values
DDD
VSDUV
G%
Fig 6.
I*+]
S-parameters as a function of frequency in
high gain mode; typical values
BGU7061
Product data sheet
6
6
6
I*+]
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V; Tamb = 25 C.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V; Tamb = 25 C.
Fig 7.
DDD
Input return loss as a function of frequency in
low gain mode; typical values
I*+]
VSDUV
G%
6
6
6
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
Fig 5.
Fig 8.
S-parameters as a function of frequency in low
gain mode; typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
12 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
.
DDD
.
I*+]
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Rollet stability factor as a function of
frequency in high gain mode; typical values
DDD
,3,
G%P
I*+]
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
Fig 9.
Fig 10. Rollet stability factor as a function of
frequency in low gain mode; typical values
DDD
,3,
G%P
*SG%
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(2) Tamb = +25 C
Fig 11. Input third-order intercept point as a function
of power gain in high gain mode; typical
values
Fig 12. Input third-order intercept point as a function
of power gain in low gain mode; typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
13 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
,3,
G%P
DDD
,3,
G%P
*SG%
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
,3,
G%P
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
Fig 13. Input third-order intercept point as a function
of power gain in high gain mode; typical
values
Fig 14. Input third-order intercept point as a function
of power gain in low gain mode; typical values
DDD
,3,
G%P
*SG%
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(1) Tamb = 40 C
Fig 15. Input third-order intercept point as a function
of power gain in high gain mode; typical
values
Fig 16. Input third-order intercept point as a function
of power gain in low gain mode; typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
14 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
,3,
G%P
DDD
,3,
G%P
*SG%
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
3LG%
G%P
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
Fig 17. Input third-order intercept point as a function
of power gain in high gain mode; typical
values
Fig 18. Input third-order intercept point as a function
of power gain in low gain mode; typical values
DDD
3LG%
G%P
*SG%
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(1) Tamb = 40 C
Fig 19. Input power at 1 dB gain compression as a
function of power gain in high gain mode;
typical values
Fig 20. Input power at 1 dB gain compression as a
function of power gain in low gain mode;
typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
15 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
3LG%
G%P
DDD
3LG%
G%P
*SG%
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
3LG%
G%P
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
Fig 21. Input power at 1 dB gain compression as a
function of power gain in high gain mode;
typical values
Fig 22. Input power at 1 dB gain compression as a
function of power gain in low gain mode;
typical values
DDD
3LG%
G%P
*SG%
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(1) Tamb = 40 C
Fig 23. Input power at 1 dB gain compression as a
function of power gain in high gain mode;
typical values
Fig 24. Input power at 1 dB gain compression as a
function of power gain in low gain mode;
typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
16 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
3LG%
G%P
DDD
3LG%
G%P
*SG%
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
1)
G%
Fig 26. Input power at 1 dB gain compression as a
function of power gain in low gain mode;
typical values
DDD
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
Fig 25. Input power at 1 dB gain compression as a
function of power gain in high gain mode;
typical values
DDD
1)
G%
*SG%
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(1) Tamb = 40 C
Fig 27. Noise figure as a function of power gain in
high gain mode; typical values
Fig 28. Noise figure as a function of power gain in low
gain mode; typical values
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17 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
1)
G%
DDD
1)
G%
*SG%
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
*SG%
Fig 30. Noise figure as a function of power gain in low
gain mode; typical values
DDD
1)
G%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
Fig 29. Noise figure as a function of power gain in
high gain mode; typical values
DDD
1)
G%
*SG%
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
*SG%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(2) Tamb = +25 C
Fig 31. Noise figure as a function of power gain in
high gain mode; typical values
Fig 32. Noise figure as a function of power gain in low
gain mode; typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
18 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
1)
G%
DDD
1)
G%
*SG%
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
*SG%
Fig 34. Noise figure as a function of power gain in low
gain mode; typical values
DDD
*S
G%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
Fig 33. Noise figure as a function of power gain in
high gain mode; typical values
DDD
*S
G%
9FWUO*S9
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
9FWUO*S9
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 900 MHz.
(2) Tamb = +25 C
Fig 35. Power gain as a function of power gain control
voltage in high gain mode; typical values
Fig 36. Power gain as a function of power gain control
voltage in low gain mode; typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
19 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
*S
G%
DDD
*S
G%
9FWUO*S9
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
9FWUO*S9
Fig 38. Power gain as a function of power gain control
voltage in low gain mode; typical values
DDD
*S
G%
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 788 MHz.
Fig 37. Power gain as a function of power gain control
voltage in high gain mode; typical values
DDD
*S
G%
9FWUO*S9
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGU7061
Product data sheet
9FWUO*S9
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 830 MHz.
(2) Tamb = +25 C
Fig 39. Power gain as a function of power gain control
voltage in high gain mode; typical values
Fig 40. Power gain as a function of power gain control
voltage in low gain mode; typical values
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Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
20 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
DDD
*S
G%
DDD
*S
G%
9FWUO*S9
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
9FWUO*S9
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
f = 850 MHz.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 41. Power gain as a function of power gain control
voltage in high gain mode; typical values
Fig 42. Power gain as a function of power gain control
voltage in low gain mode; typical values
9. Application information
Table 16. List of components
For application circuit see Figure 43.
Component
BGU7061
Product data sheet
Description
Value
Remarks
C1, C2
capacitor
1 nF
[1]
C3, C4, C5, C6, C12
capacitor
100 pF
[1]
0402
C7, C8, C9, C10,
capacitor
optional
C11, C17
capacitor
100 nF
[1]
0402
C13, C14, C15, C16
capacitor
optional
L1, L2
inductor
10 nH
[2]
0402
[1]
Murata GRM1555 series.
[2]
Murata LQG15 series.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
0402
© NXP Semiconductors N.V. 2015. All rights reserved.
21 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
9&&
9&&
&
&
/
&
&
&
&
&
&
&
&
&
5)B,1387
&
*1'
*1'
9&&
/
9&&
&
5)B287387
&
5)B287
5)B,1 %<3$663$7+
*1'
*DLQB6ZLWFKBFRQWURO
9*$
/1$
*6 *1'
QF
&
QF
9FWUO*S
*DLQBFWUO
&
*6
LF
QF
QF
&
*DLQB6ZLWFKBFRQWURO
DDD
See Table 16 for a list of components.
Fig 43. Schematic layout for application circuit
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
22 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
10. Package outline
+/4)15SODVWLFWKHUPDOHQKDQFHGORZSURILOHTXDGIODWSDFNDJHQROHDGVWHUPLQDOVERG\[[PP
%
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627
$
WHUPLQDO
LQGH[DUHD
$
(
GHWDLO;
H
&
H
E
H
/
& $ %
&
Y
Z
\ &
\
/
H
(K
H
H
WHUPLQDO
LQGH[DUHD
;
'K
PP
VFDOH
'LPHQVLRQV
8QLW
PP
$
E
PD[ QRP PLQ '
'K
(
(K
H
H
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/
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Y
Z
\
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VRWBSR
2XWOLQH
YHUVLRQ
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-(,7$
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SURMHFWLRQ
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627
Fig 44. Package outline SOT1301-1 (HLQFN16R)
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
23 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
11. Abbreviations
Table 17.
Abbreviations
Acronym
Description
3G
3rd Generation
ESD
ElectroStatic Discharge
LNA
Low Noise Amplifier
LTE
Long Term Evolution
12. Revision history
Table 18.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU7061 v.2
20150129
Product data sheet
-
BGU7061 v.1
Modifications:
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
BGU7061 v.1
BGU7061
Product data sheet
Section 1.1 on page 1: the frequency range has been extended to go from 770 MHz to 915 MHz
Section 1.4 on page 2: data measured at a frequency of 788 MHz has been added.
Section 1.4 on page 2: IP3i data measured at frequencies 830 MHz and 850 MHz have been
changed.
Section 8.2 on page 7: section has been added
Table 11 on page 8: IP3i data have been changed
Table 13 on page 10: IP3i data have been changed
Figure 3 on page 11: figure has been updated
Figure 4 on page 11: figure has been updated
Figure 5 on page 12: figure has been updated
Figure 6 on page 12: figure has been updated
Figure 13 on page 14: figure has been added
Figure 14 on page 14: figure has been added
Figure 21 on page 16: figure has been added
Figure 22 on page 16: figure has been added
Figure 29 on page 18: figure has been added
Figure 30 on page 18: figure has been added
Figure 37 on page 20: figure has been added
Figure 38 on page 20: figure has been added
20140121
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
-
© NXP Semiconductors N.V. 2015. All rights reserved.
24 of 27
BGU7061
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU7061
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
25 of 27
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Analog high linearity low noise variable gain amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
26 of 27
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Analog high linearity low noise variable gain amplifier
15. Contents
1
1.1
1.2
1.3
1.4
2
2.1
2.2
3
4
5
6
7
8
8.1
8.2
8.3
8.4
8.5
8.6
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended operating conditions. . . . . . . . 5
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Characteristics at f = 900 MHz . . . . . . . . . . . . . 6
Characteristics at f = 788 MHz . . . . . . . . . . . . . 7
Characteristics at f = 830 MHz . . . . . . . . . . . . . 8
Characteristics at f = 850 MHz . . . . . . . . . . . . 10
Gain switch truth table . . . . . . . . . . . . . . . . . . 11
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Application information. . . . . . . . . . . . . . . . . . 21
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 23
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24
Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Contact information. . . . . . . . . . . . . . . . . . . . . 26
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 January 2015
Document identifier: BGU7061