Data Sheet

Freescale Semiconductor
Data Sheet: Technical Data
Document Number: MBC13720
Rev. 4, 09/2011
MBC13720
Package Information
Plastic Package
Case 419B
(SOT-363)
MBC13720
SiGe:C Low Noise Amplifier with
Bypass Switch
Ordering Information
1
1
Introduction
The MBC13720 is a high IP3, low noise amplifier
designed for 400 MHz to 2.4 GHz multi-standard
wireless applications. The input and output match is
external to allow maximum design flexibility. The LNA
has two selectable current settings as well as a standby
mode. The LNA operates from a 2.5 to 3.0 V supply. The
MBC13720 is fabricated using an advanced RF
BiCMOS process with the SiGe:C option and is housed
in an ultra small SOT-363 surface mount package.
1.1
•
•
•
•
Device
Device Marking or
Operating
Temperature Range
Package
MBC13720NT11
20N
SOT-363
Refer to Table 1.
Contents
1
2
3
4
5
6
7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering Information . . . . . . . . . . . . . . . . . . . 2
Electrical Specifications . . . . . . . . . . . . . . . . 3
Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application Information . . . . . . . . . . . . . . . . . 9
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Product Documentation . . . . . . . . . . . . . . . . 15
Features
Selectable current, 5.0 mA or 11 mA
Standby mode to turn off device completely
High Input IP3:
10 dBm @ 1.9 GHz
13 dBm @ 2.4 GHz
Low Noise Figure:
1.38 dB @ 1.9 GHz
1.55 dB @ 2.4 GHz
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
© Freescale Semiconductor, Inc., 2005–2011. All rights reserved.
Ordering Information
•
•
•
•
•
•
Gain @ 9.0 mA, 2.75 V:
14.5 dB @ 1.9 GHz
12 dB @ 2.4 GHz
Suitable for use from 400 MHz to 2.4 GHz
Bias stabilized for device and temperature variations
Ultra small SOT-363 surface mount package
Available only in tape and reel packaging
Available only in a lead free version (device number MBC13720NT1) (Refer to Table 1.)
RF IN
4
3
RF OUT
GND
5
2
BIAS
ENABLE 1
6
1
ENABLE 2
Bias
Control
Figure 1. Pin Connections
2
Ordering Information
Table 1 provides additional details on MBC13720 orderable parts.
Table 1. Orderable Parts Details
Device
MBC13720NT1
Operating Temp
Range (TA.)
Package
Lead Frame
RoHS
Compliant
PB-Free
MSL
Level
Solder
Temp
-40° to 85° C
Tape and Reel
Pb Free
Yes
Yes
1
260° C
MBC13720 Technical Data, Rev. 4
2
Freescale Semiconductor
Electrical Specifications
3
Electrical Specifications
Table 2. Maximum Ratings
Ratings
Symbol
Value
Unit
Supply Voltage
VCC
3.3
V
Storage Temperature Range
Tstg
-65 to 150
°C
Operating Ambient Temperature Range
TA
-40 to 85
°C
RF Input Power
Prf
10
dBm
Pdis
100
mW
Power Dissipation
NOTE
1. Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation should be restricted to the limits in the
Recommended Operating Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model
(HBM) ≤ 550V all pins. Charge Device Model (CDM) ≤ 50V all pins.
Table 3. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency Range
fRF
400
—
2400
MHz
Supply Voltage
Vcc
2.3
2.7
3
V
Input High Voltage, Enable 1 and Enable 2
—
1.5
—
Vcc
V
Input Low Voltage, Enable 1 and Enable 2
—
0
—
0.95
V
Logic Voltage
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(VCC = 2.75, TA = 25° C)
Characteristic
Symbol
Min
Current Consumption
Low IP3
High IP3
Bypass
ICC
—
Input/Output Return Loss
Low IP3
High IP3
Bypass
RL
—
RF Gain (900 MHz)
Low IP3
High IP3
Bypass
G
—
Typ
5.0
11
0
10
10
12
19
20
-2.9
Max
—
Unit
mA
mA
μA
—
dB
—
dB
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
3
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75, TA = 25° C)
Characteristic
Symbol
Min
RF Gain (1.9 GHz)
Low IP3
High IP3
Bypass
G
—
RF Gain (2.4 GHz)
Low IP3
High IP3
Bypass
G
—
Noise Figure
900 MHz
1.9 GHz
2.4 GHz
NF
—
Input IP3 (900 MHz)
Low IP3
High IP3
Bypass
IIP3
—
Input IP3 (1.9 GHz)
Low IP3
High IP3
Bypass
IIP3
—
Input IP3 (2.4 GHz)
Low IP3
High IP3
Bypass
IIP3
—
Output 1 dB Compression (900 MHz)
Low IP3
High IP3
Bypass
P1dB
—
Output 1 db Compression (1.9 GHz)
Low IP3
High IP3
Bypass
P1dB
—
Output 1 dB Compression (2.4 GHz)
Low IP3
High IP3
Bypass
P1dB
—
Reverse Isolation
Low IP3
High IP3
|S12|
—
Typ
13
14
-2.5
11
12
-2.8
1.2
1.38
1.55
-3
2
27
4.0
10
29
6.0
13
25
12
11.5
5.0
11
11.5
5.0
14
14
5.0
25
20
Max
Unit
—
dB
—
dB
—
dB
—
dBm
—
dBm
—
dBm
—
dBm
—
dBm
—
dBm
—
dB
MBC13720 Technical Data, Rev. 4
4
Freescale Semiconductor
Electrical Specifications
Table 5. Truth Table
EN1
EN2
State
Current Consumption
Low
Low
Standby
< 20 μA
Low
High
Bypass
0 μA
High
Low
High IP3
11 mA (approx.)
High
High
Low IP3
5.0 mA (approx.)
Note: Logic state of “high” equals VCC voltage. Logic state of “low” equals ground potential.
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
5
Parameters
4
Parameters
Table 6. High IP3 Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
f
(MHz)
S21
S11
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.615
-85
15.495
57
0.017
51
0.620
-87
400
0.565
-49
13.968
-30
0.022
63
0.631
-84
500
0.520
81
12.575
-70
0.029
-67
0.649
67
600
0.498
85
10.962
74
0.033
-50
0.646
86
700
0.476
-85
9.675
56
0.039
4
0.646
-87
800
0.462
-78
8.657
-35
0.045
56
0.644
-85
900
0.447
33
7.819
-72
0.050
72
0.641
-39
1000
0.438
80
7.106
79
0.055
-69
0.626
84
1100
0.433
85
6.388
70
0.060
-52
0.628
87
1200
0.419
-83
5.961
16
0.063
10
0.622
-86
1300
0.406
-72
5.666
-67
0.071
62
0.610
-81
1400
0.379
64
5.306
-79
0.080
75
0.591
71
1500
0.373
82
4.962
78
0.086
-71
0.588
85
1600
0.382
-84
4.569
61
0.093
-48
0.582
-87
1700
0.396
-79
4.312
-52
0.097
31
0.583
-85
1800
0.399
-40
4.092
-77
0.103
69
0.586
-71
1900
0.393
75
3.942
82
0.110
78
0.585
79
2000
0.398
84
3.715
77
0.118
-72
0.580
86
2100
0.405
-83
3.513
42
0.124
-44
0.575
-86
2200
0.403
-76
3.402
-70
0.130
49
0.565
-83
2300
0.399
50
3.401
-81
0.141
74
0.559
4
2400
0.363
80
3.256
82
0.146
-79
0.548
83
2500
0.363
-84
3.165
74
0.159
-72
0.510
86
2600
0.381
-78
3.050
-42
0.170
-37
0.499
-84
2700
0.393
15
2.909
-79
0.179
65
0.490
-73
2800
0.426
80
2.770
-84
0.183
78
0.513
69
2900
0.431
85
2.574
82
0.185
-79
0.517
84
3000
0.462
-84
2.451
66
0.194
-68
0.527
86
MBC13720 Technical Data, Rev. 4
6
Freescale Semiconductor
Parameters
Table 7. High IP3 Mode 85°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.550
-84
16.159
50
0.017
53
0.595
-87
400
0.516
-47
14.168
-39
0.023
67
0.595
-83
500
0.479
80
12.719
-71
0.029
-66
0.632
67
600
0.458
85
11.035
73
0.034
-49
0.622
86
700
0.438
-84
9.665
52
0.040
4
0.626
-87
800
0.429
-77
8.600
-42
0.044
54
0.627
-85
900
0.413
32
7.669
-73
0.050
71
0.623
-31
1000
0.402
79
6.984
78
0.055
-70
0.613
84
1100
0.401
84
6.322
69
0.063
-52
0.612
87
1200
0.384
-82
5.800
5
0.069
18
0.606
-86
1300
0.366
-70
5.467
-69
0.074
62
0.596
-80
1400
0.350
61
5.158
-80
0.081
75
0.578
72
1500
0.338
81
4.803
78
0.087
-71
0.572
85
1600
0.340
-83
4.418
59
0.091
-48
0.560
-87
1700
0.357
-78
4.195
-56
0.096
37
0.562
-84
1800
0.358
-41
3.969
-78
0.103
69
0.562
-68
1900
0.356
74
3.768
82
0.108
78
0.564
80
2000
0.362
83
3.550
77
0.113
-71
0.543
85
2100
0.364
-83
3.412
37
0.122
-43
0.551
-86
2200
0.349
-75
3.256
-72
0.130
50
0.548
-82
2300
0.357
27
3.213
-82
0.134
73
0.549
22
2400
0.322
77
3.140
82
0.139
-79
0.535
83
2500
0.300
-83
3.018
73
0.152
-71
0.500
86
2600
0.286
-76
2.868
-47
0.160
-28
0.482
-84
2700
0.296
-29
2.775
-80
0.170
64
0.488
-73
2800
0.348
76
2.669
-84
0.169
77
0.504
70
2900
0.359
83
2.485
82
0.178
-79
0.509
84
3000
0.386
-83
2.385
67
0.179
-69
0.501
86
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
7
Parameters
Table 8. High IP3 Mode -40°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.614
-85
15.322
55
0.017
49
0.609
-87
400
0.574
-58
13.796
-30
0.021
65
0.611
-83
500
0.534
81
12.602
-70
0.028
-65
0.655
67
600
0.509
85
11.063
74
0.031
-47
0.646
86
700
0.488
-85
9.813
57
0.039
8
0.649
-87
800
0.480
-79
8.774
-32
0.044
57
0.648
-85
900
0.464
24
7.871
-71
0.048
71
0.645
-47
1000
0.454
80
7.219
79
0.054
-69
0.628
84
1100
0.452
85
6.568
71
0.057
-50
0.627
87
1200
0.441
-84
6.082
20
0.064
14
0.627
-86
1300
0.424
-74
5.759
-66
0.071
62
0.623
-81
1400
0.409
61
5.454
-79
0.077
74
0.608
71
1500
0.400
82
5.094
78
0.081
-70
0.604
85
1600
0.407
-85
4.668
62
0.086
-47
0.598
-87
1700
0.428
-81
4.457
-47
0.090
31
0.602
-85
1800
0.426
-53
4.235
-77
0.096
68
0.603
-73
1900
0.427
76
4.036
82
0.103
77
0.607
80
2000
0.430
84
3.808
77
0.108
-72
0.587
86
2100
0.438
-84
3.675
46
0.117
-46
0.602
-87
2200
0.433
-78
3.524
-69
0.121
44
0.594
-83
2300
0.429
37
3.483
-81
0.130
72
0.585
16
2400
0.403
80
3.407
82
0.137
79
0.566
83
2500
0.399
85
3.280
74
0.154
-73
0.541
86
2600
0.409
-80
3.147
-36
0.170
-36
0.521
-84
2700
0.444
-14
3.029
-78
0.176
61
0.523
-74
2800
0.468
81
2.897
-84
0.189
78
0.526
72
2900
0.466
85
2.647
82
0.178
-78
0.544
84
3000
0.507
-85
2.538
67
0.181
-69
0.561
87
MBC13720 Technical Data, Rev. 4
8
Freescale Semiconductor
Parameters
Table 9. Low IP3 Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.737
-87
10.452
66
0.018
54
0.669
-87
400
0.698
-53
9.990
-5
0.024
67
0.682
-85
500
0.655
85
9.594
-68
0.031
-66
0.727
75
600
0.619
87
8.654
78
0.033
-42
0.714
87
700
0.583
-86
7.880
66
0.041
15
0.710
-88
800
0.550
-77
7.200
-9
0.045
58
0.699
-86
900
0.523
69
6.600
-70
0.049
72
0.683
-6
1000
0.497
84
6.094
-80
0.054
-68
0.672
85
1100
0.479
-86
5.622
74
0.059
-48
0.661
87
1200
0.451
-82
5.231
40
0.068
24
0.648
-87
1300
0.426
-57
4.960
-64
0.069
63
0.632
-80
1400
0.404
74
4.757
-79
0.075
75
0.622
76
1500
0.402
83
4.417
80
0.082
-70
0.615
86
1600
0.397
-83
4.105
68
0.084
-44
0.594
-87
1700
0.400
-76
3.925
-42
0.089
38
0.601
-85
1800
0.395
27
3.755
-77
0.098
68
0.592
-65
1900
0.390
79
3.560
-83
0.101
77
0.602
81
2000
0.389
84
3.350
79
0.108
-70
0.581
86
2100
0.384
-82
3.200
53
0.117
-40
0.577
-86
2200
0.382
-69
3.117
-69
0.121
47
0.573
-82
2300
0.374
63
3.036
-81
0.133
73
0.568
33
2400
0.344
81
2.954
83
0.137
-79
0.547
83
2500
0.338
-83
2.811
76
0.153
-72
0.535
86
2600
0.362
-74
2.743
-36
0.164
-30
0.514
-84
2700
0.371
54
2.623
-80
0.170
65
0.499
-73
2800
0.414
81
2.490
-85
0.172
77
0.520
69
2900
0.410
-85
2.265
83
0.169
-78
0.529
84
3000
0.402
-81
2.145
70
0.174
-67
0.540
87
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
9
Parameters
Table 10. Low IP3 Mode 85°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.722
-87
10.245
64
0.016
53
0.584
-86
400
0.681
-45
10.107
-8
0.025
66
0.650
-84
500
0.631
84
9.758
-69
0.030
-66
0.718
76
600
0.601
87
8.730
77
0.036
-47
0.709
87
700
0.564
-85
7.901
65
0.040
11
0.708
-88
800
0.534
-76
7.185
-15
0.046
60
0.690
-85
900
0.512
70
6.564
-71
0.051
72
0.680
1
1000
0.484
83
6.062
-80
0.056
-69
0.670
85
1100
0.467
-86
5.559
74
0.061
-45
0.657
87
1200
0.440
-82
5.165
36
0.066
18
0.646
-86
1300
0.415
-57
4.925
-65
0.072
62
0.628
-80
1400
0.394
74
4.700
-79
0.077
75
0.616
76
1500
0.391
83
4.348
80
0.084
-70
0.606
86
1600
0.389
-83
4.051
67
0.091
-46
0.586
-87
1700
0.388
-76
3.857
-45
0.097
37
0.594
-84
1800
0.381
16
3.689
-77
0.100
69
0.580
-62
1900
0.384
78
3.489
-83
0.107
77
0.589
81
2000
0.380
84
3.291
79
0.114
-71
0.571
86
2100
0.377
-82
3.139
52
0.122
-46
0.574
-86
2200
0.371
-72
3.049
-70
0.131
50
0.567
-82
2300
0.369
50
2.974
-82
0.139
74
0.562
41
2400
0.343
80
2.941
83
0.143
-79
0.540
83
2500
0.315
-83
2.771
76
0.157
-72
0.525
86
2600
0.323
-76
2.711
-30
0.167
-29
0.511
-84
2700
0.340
8
2.636
-79
0.174
63
0.519
-73
2800
0.382
77
2.521
-84
0.179
77
0.533
72
2900
0.410
-85
2.265
83
0.169
-78
0.529
84
3000
0.402
-81
2.145
70
0.174
-67
0.540
87
MBC13720 Technical Data, Rev. 4
10
Freescale Semiconductor
Parameters
Table 11. Low IP3 Mode -40°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.756
-87
9.834
67
0.019
57
0.676
-88
400
0.727
-64
9.449
5
0.025
67
0.686
-85
500
0.678
85
9.174
-67
0.031
-66
0.745
76
600
0.645
87
8.335
78
0.035
-46
0.736
87
700
0.607
-86
7.647
68
0.040
20
0.731
-88
800
0.575
-79
7.025
0
0.046
60
0.715
-86
900
0.549
70
6.485
-69
0.050
72
0.703
-15
1000
0.525
84
6.047
-79
0.055
-68
0.693
85
1100
0.505
-86
5.547
75
0.056
-43
0.681
88
1200
0.475
-83
5.196
45
0.064
29
0.672
-87
1300
0.451
-63
4.976
-62
0.066
64
0.653
-81
1400
0.431
75
4.763
-78
0.071
75
0.642
77
1500
0.426
84
4.415
80
0.075
-69
0.640
86
1600
0.422
-84
4.138
69
0.083
-42
0.623
-87
1700
0.422
-77
3.944
-36
0.085
39
0.625
-85
1800
0.419
22
3.787
-76
0.091
68
0.610
-67
1900
0.417
79
3.597
-83
0.094
77
0.626
82
2000
0.417
85
3.395
79
0.100
-71
0.602
86
2100
0.411
-83
3.236
56
0.113
-46
0.605
-87
2200
0.406
-70
3.141
-68
0.122
46
0.584
-82
2300
0.390
65
3.048
-81
0.132
73
0.573
35
2400
0.351
81
2.976
83
0.136
-79
0.557
83
2500
0.339
-83
2.836
77
0.145
-72
0.547
86
2600
0.371
-76
2.806
-23
0.155
-31
0.533
-85
2700
0.405
47
2.698
-79
0.157
61
0.539
-75
2800
0.439
81
2.556
-84
0.163
77
0.552
72
2900
0.464
86
2.336
83
0.167
-79
0.567
85
3000
0.469
-83
2.213
70
0.178
-69
0.568
-87
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
11
Parameters
Table 12. Bypass Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = Low, EN2 = High)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.866
-88
0.293
76
0.295
76
0.706
-87
400
0.811
79
0.386
85
0.384
85
0.702
-81
500
0.753
87
0.468
-82
0.470
-82
0.736
85
600
0.717
-88
0.514
-2
0.506
6
0.710
88
700
0.671
-85
0.549
83
0.546
83
0.687
-87
800
0.629
29
0.575
87
0.575
87
0.653
-75
900
0.593
84
0.600
-85
0.604
-85
0.618
82
1000
0.556
87
0.615
-64
0.618
-64
0.585
86
1100
0.527
-84
0.624
83
0.626
83
0.555
-86
1200
0.492
-57
0.636
87
0.632
87
0.528
-79
1300
0.456
78
0.647
-87
0.641
-87
0.493
63
1400
0.435
85
0.655
-81
0.649
-81
0.474
83
1500
0.439
-83
0.648
76
0.652
77
0.470
-86
1600
0.440
-70
0.637
86
0.634
86
0.456
-81
1700
0.428
70
0.631
-87
0.628
-87
0.451
-40
1800
0.412
83
0.642
-85
0.626
-85
0.417
78
1900
0.395
-84
0.649
-54
0.641
-59
0.397
84
2000
0.396
-78
0.636
83
0.644
84
0.379
-82
2100
0.384
30
0.626
87
0.633
87
0.344
-68
2200
0.362
79
0.619
-86
0.623
-86
0.322
65
2300
0.346
84
0.622
-81
0.620
-81
0.294
80
2400
0.335
-78
0.615
72
0.610
72
0.274
-81
2500
0.368
-20
0.576
85
0.592
85
0.271
-69
2600
0.398
78
0.546
-87
0.554
-87
0.262
51
2700
0.415
84
0.535
-84
0.530
-84
0.231
76
2800
0.421
-84
0.532
-66
0.510
-66
0.199
-81
2900
0.415
-75
0.533
78
0.532
77
0.173
-73
3000
0.413
60
0.510
85
0.523
85
0.141
20
MBC13720 Technical Data, Rev. 4
12
Freescale Semiconductor
Parameters
Table 13. Standby Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = Low, EN2 = Low)
f
(MHz)
S11
S21
S12
S22
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
|S11|
∠φ
300
0.938
-89
0.017
50
0.020
49
0.765
-88
400
0.935
-88
0.026
67
0.027
66
0.795
-87
500
0.927
88
0.035
-68
0.034
-69
0.883
68
600
0.922
89
0.042
-53
0.042
-53
0.893
89
700
0.917
-89
0.049
5
0.049
7
0.909
-89
800
0.918
-89
0.054
59
0.055
58
0.909
-89
900
0.911
79
0.064
73
0.063
73
0.907
-82
1000
0.899
89
0.071
-69
0.068
-69
0.894
88
1100
0.891
89
0.075
-48
0.077
-47
0.887
89
1200
0.875
-89
0.080
36
0.081
35
0.884
-89
1300
0.869
-86
0.091
69
0.088
67
0.869
-87
1400
0.852
87
0.099
-77
0.095
-77
0.868
85
1500
0.843
89
0.098
-68
0.102
-69
0.859
89
1600
0.839
-89
0.099
-27
0.103
-25
0.836
-89
1700
0.830
-87
0.106
55
0.107
55
0.838
-88
1800
0.825
80
0.115
73
0.114
73
0.810
-75
1900
0.812
88
0.118
-77
0.120
-77
0.819
87
2000
0.803
-89
0.116
-67
0.121
-67
0.791
88
2100
0.783
-87
0.122
-20
0.125
-24
0.775
-88
2200
0.776
-76
0.131
59
0.124
59
0.769
-86
2300
0.759
86
0.134
76
0.131
75
0.752
76
2400
0.717
88
0.142
-78
0.140
-78
0.733
87
2500
0.710
-87
0.150
-69
0.152
-70
0.710
-88
2600
0.719
-81
0.165
-7
0.168
-13
0.665
-85
2700
0.722
83
0.180
70
0.174
70
0.643
-69
2800
0.713
87
0.182
79
0.177
79
0.607
81
2900
0.707
-88
0.175
-77
0.167
-77
0.624
86
3000
0.667
-84
0.166
-63
0.171
-66
0.598
-87
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
13
Parameters
Table 14. Low IP3 Noise Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
400
0.57
0.26
15.5
0.19
25.3
410
0.57
0.26
15.7
0.19
24.93
420
0.58
0.26
16
0.19
24.8
430
0.58
0.26
16.2
0.19
24.68
440
0.59
0.26
16.5
0.19
24.56
450
0.59
0.26
16.7
0.19
24.44
460
0.59
0.26
16.9
0.19
24.32
470
0.6
0.26
17.2
0.19
24.2
480
0.6
0.26
17.4
0.19
24.09
490
0.6
0.26
17.7
0.19
23.97
500
0.61
0.26
17.9
0.19
23.85
550
0.63
0.26
19.1
0.19
23.01
600
0.64
0.26
20.3
0.19
22.59
650
0.66
0.25
21.5
0.19
22.16
700
0.67
0.25
22.7
0.19
21.74
750
0.69
0.25
23.9
0.19
21.32
800
0.7
0.25
25.1
0.19
20.89
850
0.72
0.24
26.4
0.19
20.47
900
0.73
0.24
27.6
0.19
20.05
1000
0.76
0.24
30
0.19
19.2
Table 15. High IP3 Noise Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
400
0.65
0.2
5.5
0.22
26.21
410
0.65
0.2
6.1
0.22
26.06
420
0.65
0.2
6.7
0.22
25.91
430
0.66
0.19
7.3
0.21
25.76
440
0.66
0.19
7.9
0.21
25.61
450
0.66
0.19
8.5
0.21
25.46
460
0.66
0.19
9.1
0.21
25.31
470
0.66
0.19
9.7
0.21
25.16
MBC13720 Technical Data, Rev. 4
14
Freescale Semiconductor
Parameters
Table 15. High IP3 Noise Parameters (continued)
(VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
480
0.67
0.18
10.3
0.2
25.01
490
0.67
0.18
10.9
0.2
24.87
500
0.67
0.18
11.5
0.2
24.54
550
0.68
0.17
14.5
0.19
24.06
600
0.69
0.16
17.5
0.19
23.59
650
0.7
0.15
20.5
0.18
23.12
700
0.71
0.14
23.5
0.18
22.65
750
0.72
0.13
26.5
0.17
22.17
800
0.73
0.12
29.4
0.17
21.7
850
0.74
0.11
32.4
0.16
21.23
900
0.75
0.1
35.4
0.16
20.76
1000
0.77
0.09
41.4
0.15
19.81
Figure 2. Noise Figure vs Temperature (Low IP3 Mode)
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
15
Parameters
Figure 3. Noise Figure vs Temperature (High IP3 Mode)
Figure 4. Icc vs Vcc Over Temperature (Low IP3 Mode)
Figure 5. Icc vs Vcc Over Temperature (High IP3 Mode)
MBC13720 Technical Data, Rev. 4
16
Freescale Semiconductor
Application Information
5
Application Information
The MBC13720 SiGe:C LNA is designed for applications in the 400 MHz to 2.4 GHz range. It has four
different modes: Low IP3, High IP3, Bypass, and Standby. The IC is programmable through the Enable 1
and Enable 2 pins. In Low IP3 mode, current consumption is optimized. Current consumption is higher in
High IP3 mode to boost the intercept point performance. The gain difference between Low IP3 and High
IP3 modes is typically 1.0 dB; and typically the Low IP3 mode has a slightly better noise figure
performance.
The internal bypass switch is designed for broadband applications. One of the advantages of the
MBC13720 is the simplification of the matching network in both bypass and amplifier modes. The bypass
switch is designed so that changes of input and output return losses between bypass mode and amplifier
mode are minimized. As a result, the mismatch at the LNA input and output is minimized and the matching
network design is simplified.
In the design of the external matching network, conjugate matching does not necessarily provide the best
noise figure performance. Balancing between noise figure, gain, and intercept point is the major design
consideration.
Figure 6 shows the typical application circuit at 1.9 and 2.4 GHz. The noise figure, input intercept point,
gain, and return losses are optimized. L1 and C2 act as a low frequency trap to improve the input intercept
point.
In Figure 7, the typical application circuit for 900 MHz is shown. The input low frequency trap again is
used to maximize the input intercept point. It has moderate IP3 performance and high gain. Figure 8 shows
the 900 MHz application circuit with feedback network for higher IP3. Capacitive feedback is used to
increase the third order input intercept point while decreasing gain and provides unconditional stability.
The corresponding PCBs are shown in Figure 9 through Figure 11. Table 16 lists the bill of materials for
the 1900 MHz, 900 MHz, and High IP3 900 MHz application circuits. Typical characteristics of the
application boards are shown in Table 17.
C5
27 pF
C1
27pf
4
L1
8.2 nH
RF
IN
C7
33 pF
3
C2
0.1 uF
Enable1
L2
2.7 nH
5
RF
OUT
C3
1 pF
2
R1
330 Ω
6
Logic
1
Enable2
C4
33 pF
C6
0.1uF
Vcc
Figure 6. Typical 1.9 and 2.4 GHz LNA Application Schematic
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
17
Application Information
L1
C1
47pF 2.2 nH
4
3
C2
0.1 uF
5
2
Enable 1
6
RF
IN
C3
3 pF
R2
5Ω
L2
27 nH
RF
OUT
L3
8.2 nH
R1
330 Ω
Logic
1
C5
0.1 uF
C4
47 pF
Enable2
Vcc
Figure 7. Typical 900 MHz LNA Application Schematic
p
p
p
C1
150pF
RF
IN
C6
3.3
pF
R2
10 Ω
4
3
5
2
L1
22 nH
C2
0.1 uF
Enable 1
RF
OUT
L2
6.8 nH
R1
330 Ω
6
Logic
1
C8
47 pF
C7
0.1 uF
Enable2
Vcc
Figure 8. High IP3 900 MHz LNA Application Schematic
Table 16. Bill of Materials for the Application Circuits1
Component
Value
Case
Manufacturer
Comments
1900 MHz Figure 6 Application Circuit
C1
27 pF
0402
Murata
DC Block, Input match
C2
0.1 uF
0603
Murata
Low freq bypass
C3
1.0 pF
0402
Murata
Output match
C4
33 pF
0402
Murata
Low freq bypass
C5
27 pF
0402
Murata
DC Block, Output match
C6
0.1 uF
0603
Murata
Low freq bypass
C7
33 pF
0402
Murata
RF bypass
L1
8.2 nH
0402
Toko
Low freq bypass
L2
2.7 nH
0402
Toko
DC feed, Output match
R1
330 ohm
0402
KOA
Bias
MBC13720 Technical Data, Rev. 4
18
Freescale Semiconductor
Application Information
Table 16. Bill of Materials for the Application Circuits1 (continued)
Component
Value
Case
Manufacturer
Q1
MBC13720
SOT363
Freescale
Comments
Freescale SiGe LNA
900 MHz Figure 7 Application Circuit
C1
47 pF
0402
Murata
DC Block, Input match
C2
0.1 uF
0603
Murata
Low freq bypass
C3
3.0 pF
0402
Murata
DC block, Output match
C4
47 pF
0402
Murata
900 MHz short
C5
0.1 uF
0603
Murata
Low freq bypass
L1
2.2 nH
0402
Toko
Input match
L2
27 nH
0402
Toko
Input match
L3
8.2 nH
0402
Toko
Output match, bias decouple
R1
330 ohm
0402
KOA
Bias
R2
5 ohm
0402
KOA
Stability
Q1
MBC13720
SOT363
Freescale
Freescale SiGe LNA
High IP3 900 MHz Figure 8 Application Circuit
1
C1
150 pF
402
Murata
DC Block, Input match
C2
0.1 uF
0603
Murata
Low freq bypass
C3
0.5 pF
402
Murata
IP3 improvement
C4
0.5 pF
402
Murata
IP3 improvement
C5
1.0 pF
402
Murata
RF bypass
C6
3.3 pF
402
Murata
Output match
C7
0.1 uF
0603
Murata
Low freq bypass
C8
47 pF
0402
Murata
RF Bypass
L1
22 nH
402
Toko
Input match
L2
6.8 nH
402
Toko
DC feed, output match
R1
330 ohm
402
KOA
Bias
R2
10 ohm
402
KOA
Stability
Q1
MBC13720
SOT363
Freescale
Freescale SiGe LNA
All components are RoHS compliant.
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
19
Application Information
MBC13720
RF IN
C1
RF OUT
C2 C7
L2 C3 C5
L1
Q1
R1
E1 E2
Vcc
E2
E1
V
C
C
G
N
D
C4
C6
GND
V8 R1
Figure 9. 1.9/2.4 GHz Assembly Diagram
C2
C1
L1
L2 R2
C3
L3
R1
C4
C5
R1
Figure 10. 900 MHz Assembly Diagram
MBC13720 Technical Data, Rev. 4
20
Freescale Semiconductor
Application Information
C2
C1
L1
C3 C4
C5
C6
R2
L2
R1
C7
Figure 11. 900 MHz Capacitive Feedback Assembly Diagram
Table 17. Typical Electrical Characteristics of the Application Circuits
Mode
Symbol
High IP3
Low IP3
Bypass
Standby
Unit
Gain
G
20
19
-2.9
-22
dB
Noise Figure
NF
1.3
1.2
2.9
—
dB
Input Intermodulation Intercept Point
IIP3
2.0
-3.0
29
—
dBm
Output Intermodulation Intercept Point
OIP3
23
17
26
—
dBm
Output 1dB Compression Point
P1dB
11.5
10.5
5.0
—
dBm
Input Return Loss
|S11|2
11
10
12
—
dB
Output Return Loss
|S22|2
11
10
15
—
dB
Reverse Isolation
|S12|2
25
24
2.9
22
dB
Gain
G
16
15
-4.0
-14.5
dB
Noise Figure
NF
1.4
1.3
4.0
—
dB
Input Intermodulation Intercept Point
IIP3
10
2.0
27
—
dBm
Output Intermodulation Intercept Point
OIP3
26
18.5
23
—
dBm
Output 1 dB Compression Point
P1dB
11.5
12
5.0
—
dBm
Input Return Loss
|S11|2
12
11
8.0
—
dB
Output Return Loss
|S22|2
12
12
14
—
dB
Reverse Isolation
|S12|2
22
20
4.0
14.5
dB
900 MHz TYPICAL (See Figure 7)
900 MHz HIGH IP3 (See Figure 8)
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
21
Application Information
Table 17. Typical Electrical Characteristics of the Application Circuits (continued)
Mode
Symbol
High IP3
Low IP3
Bypass
Standby
Unit
Gain
G
14
13
-2.5
-16
dB
Noise Figure
NF
1.5
1.4
2.5
—
dB
Input Intermodulation Intercept Point
IIP3
10
4.0
29
—
dBm
Output Intermodulation Intercept Point
OIP3
24.4
17
26.5
—
dBm
Output 1dB Compression Point
P1dB
1.9 GHz (See Figure 6)
11.5
11
5.0
—
dBm
Input Return Loss
|S11|
2
10
8.0
20
—
dB
Output Return Loss
|S22|2
8.0
7.0
30
—
dB
Reverse Isolation
|S12|2
19
19
2.5
16
dB
Gain
G
12
11
-2.8
-15
dB
Noise Figure
NF
1.7
1.55
2.8
—
dB
Input Intermodulation Intercept Point
IIP3
13
6.0
25
—
dBm
Output Intermodulation Intercept Point
OIP3
25
17.5
22
—
dBm
Output 1dB Compression Point
P1dB
14
14
5.0
—
dBm
Input Return Loss
|S11|2
12
10
12
—
dB
Output Return Loss
|S22|2
8.0
7.0
14
—
dB
Reverse Isolation
|S12|2
17
17
2.8
15
dB
2.4 GHz (See Figure 6)
MBC13720 Technical Data, Rev. 4
22
Freescale Semiconductor
6
Packaging
NOTES
A
G
V
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
DIM
A
B
C
D
G
H
J
K
N
S
V
-B1
2
3
D
6 PL
0.2 (0.008)
M
B
M
N
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
--0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
0.012 0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
J
C
K
H
Figure 12. Outline Dimensions for SOT-363 (Case Outline 419B-01, Issue G)
7
Product Documentation
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Table 18 summarizes revisions to this document since the previous release (Rev. 3.5).
Table 18. Revision History
Location
Revision
Section 3, “Electrical Specifications
Added Note about Maximum ratings and ESD specifications.
Figure 6 through Figure 8
Updated figure content
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
23
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