Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMZ27333B
Rev. 0, 1/2016
2 W High Gain Power Amplifier for
Cellular Infrastructure
InGaP GaAs HBT
The MMZ27333B is a versatile 3--stage power amplifier targeted at driver and
pre--driver applications for macro and micro base stations and final--stage
applications for small cells. Its versatile design allows operation in any
frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The
device operates off a 5 V supply, and its bias currents and portions of the
matching networks are adjustable for optimum performance in any specific
application. It is housed in a QFN 4  4 surface mount package.
MMZ27333BT1
1500–2700 MHz, 35 dB, 33 dBm
InGaP HBT LINEAR AMPLIFIER
 Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc,
ICQ = 430 mA.
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
ICC
Total
2140 MHz
22.3
35.8
–48.0
499
W--CDMA
2600 MHz
21.3
36.1
–48.0
498
LTE 20 MHz
RFin2
VCC2
Test Signal
QFN 4  4
Features







P1dB: up to 33 dBm
Gain: More than 35 dB
5 V Supply
Excellent Linearity
High Efficiency
Single--ended Power Detector
Band Tunable
VCC1/
RFout1
PDET
VCC3/RFout3
RFin1
VCC3/RFout3
VCC3/RFout3
BIAS
CIRCUIT
VBA1
VBA2
VBIAS
Figure 1. Functional Block Diagram
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ27333BT1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
VCC
6
V
ICC
68
240
960
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg
–65 to +150
C
Junction Temperature
TJ
175
C
Symbol
Value (1)
Supply Voltage
Supply Current
ICC1
ICC2
ICC3
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 95C, VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
RJC
Stage 1
Stage 2
Stage 3
Unit
C/W
75
79
21
Table 3. Electrical Characteristics (VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale PA
Driver Application Circuit tuned for LTE application)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
34.8
35.8
—
dB
Input Return Loss (S11)
IRL
—
17
—
dB
Output Return Loss (S22)
ORL
—
13.3
—
dB
Power Output @ 1dB Compression
P1dB
—
32.2
—
dBm
Total Supply Current (ICC1 + ICC2 + ICC3 + IBIAS)
ICQ
420
430
445
mA
Supply Voltage
VCC
—
5
—
V
Characteristic
MMZ27333BT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 5. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
VCC1/
RFout1 N.C. RFin2 N.C. VCC2 PDET
24
23
22
21
20
19
N.C.
1
18
N.C.
2
17 VCC3/RFout3
N.C.
3
RFin1 4
GND
N.C.
16 VCC3/RFout3
15 VCC3/RFout3
N.C.
5
14
N.C.
N.C.
6
13
N.C.
7
8
9
10
11
12
N.C. VBA1 VBA2 VBIAS N.C. N.C.
(Top View)
Note: Exposed backside of the package is DC and RF
ground. N.C. can be connected to GND.
Figure 2. Pin Connections
MMZ27333BT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
VCC1
VCC2
L2
R3
C11
L1
L4
24
C1
C10
Z3
C7
RFIN
C9
C13 C14
C12
PDET
C8
23
22
21
20
19
1
18
2
17
3
16
4
15
5
6
13
8
9
R1
10
11
12
VCC3
C15
C16
C4
Z2
Z1
C2
14
ACTIVE BIAS CIRCUIT
7
L3
RFOUT
C3
Z1: 0.066”  0.022” Microstrip
Z2: 0.128”  0.022” Microstrip
Z3: 0.058”  0.022” Microstrip
R2
VBIAS
C6
C5
Figure 3. MMZ27333BT1 Test Circuit Schematic
Table 6. MMZ27333BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023K220BBS
AVX
C2
2.0 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.8 pF Chip Capacitor
04023J1R8BBS
AVX
C5, C11, C13, C15
1000 pF Chip Capacitors
GCM155R71E103KA37D
Murata
C6, C14
1 F Chip Capacitors
GRM188R61A105KA61D
Murata
C7
1.5 pF Chip Capacitor
GRM1555C1H1R5BA91D
Murata
C8
0.8 pF Chip Capacitor
GRM1555C1HR80BA01D
Murata
C9
7.5 pF Chip Capacitor
04023J7R5BBS
AVX
C10
470 pF Chip Capacitor
GRM1555C1H471JA01D
Murata
C12
0.01 F Chip Capacitor
C0603C103J5RACTU
Kemet
C16
4.7 F Chip Capacitor
GRM188R60J475KE19D
Murata
L1
56 nH Chip Inductor
0603CS--56NXJL
Coilcraft
L2
10 nH Chip Inductor
0603HC-10NXLLW
Coilcraft
L3
6.8 nH Chip Inductor
0603HC-6N8XJLW
Coilcraft
L4
1.8 nH Chip Inductor
LL1005-FHL1N85
TOKO
R1
1.2 k Chip Resistor
RC0402FR-071K20L
Yageo
R2
330 , 1/16 W Chip Resistor
CRCW0402330RFKED
Vishay
R3
0  1 A Chip Resistor
ERJ2GEY0R00V
Panasonic
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
MMZ27333BT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
VCC3
VDECT
VCC2
VCC1
C14
C13
R3
C12
C11
RFIN
L2
L1
C10
C16
C15
L3
C9
C7
C2
C5
C1 L4
C6
R1 R2
C3
C4
M70506
VBIAS
QFN 44--24E
Rev. 1
RFOUT
C8
PCB actual size: 1.30  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 4. MMZ27333BT1 Test Circuit Component Layout
Table 6. MMZ27333BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4
22 pF Chip Capacitors
04023K220BBS
AVX
C2
2.0 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.8 pF Chip Capacitor
04023J1R8BBS
AVX
C5, C11, C13, C15
1000 pF Chip Capacitors
GCM155R71E103KA37D
Murata
C6, C14
1 F Chip Capacitors
GRM188R61A105KA61D
Murata
C7
1.5 pF Chip Capacitor
GRM1555C1H1R5BA91D
Murata
C8
0.8 pF Chip Capacitor
GRM1555C1HR80BA01D
Murata
C9
7.5 pF Chip Capacitor
04023J7R5BBS
AVX
C10
470 pF Chip Capacitor
GRM1555C1H471JA01D
Murata
C12
0.01 F Chip Capacitor
C0603C103J5RACTU
Kemet
C16
4.7 F Chip Capacitor
GRM188R60J475KE19D
Murata
L1
56 nH Chip Inductor
0603CS--56NXJL
Coilcraft
L2
10 nH Chip Inductor
0603HC-10NXLLW
Coilcraft
L3
6.8 nH Chip Inductor
0603HC-6N8XJLW
Coilcraft
L4
1.8 nH Chip Inductor
LL1005-FHL1N85
TOKO
R1
1.2 k Chip Resistor
RC0402FR-071K20L
Yageo
R2
330 , 1/16 W Chip Resistor
CRCW0402330RFKED
Vishay
R3
0  1 A Chip Resistor
ERJ2GEY0R00V
Panasonic
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ27333BT1
RF Device Data
Freescale Semiconductor, Inc.
5
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
–10
40
–12
–14
–18
S21 (dB)
–16
S11 (dB)
38
–40C
85C
–20
–22
25C
–24
–26
36
25C
34
85C
32
–28
–30
2400
–40C
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
2480
2560
2640
2720
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
30
2400
2800
2480
2560
2640
2720
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
2800
–4
–6
–40C
S22 (dB)
–8
–10
25C
85C
–12
–14
–16
–18
2400
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
2480
2560
2640
2720
2800
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMZ27333BT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz, 5 VOLT OPERATION
500
–33
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz
–36 LTE --20 MHz 3GPP TM1 Signal
–39
ICC, COLLECTOR CURRENT (mA)
–45
–40C
–51
85C
–54
–57
25C
–60
–63
10
40
Gps, POWER GAIN (dB)
38
12
14
16
18
20
22
24
–40C
350
ICC3
300
85C
25C
250
200
150
100
50
25C
ICC2
--40C
ICC1
85C
--40C
25C
85C
12
14
16
18
22
20
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 8. ACPR versus Output Power
versus Temperature
Figure 9. Stage Collector Current versus
Output Power versus Temperature
25C
85C
34
26
2.8
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz
LTE --20 MHz 3GPP TM1 Signal
–40C
36
32
30
10
400
0
10
26
PDET, POWER DETECTOR (V)
ACPR (dBc)
–42
–48
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz
LTE --20 MHz 3GPP TM1 Signal
450
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2600 MHz
LTE --20 MHz 3GPP TM1 Signal
2.4
2
–40C
1.6
25C
1.2
85C
0.8
0.4
12
14
16
18
20
22
24
26
0
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
versus Temperature
Figure 11. Power Detector versus Output Power
versus Temperature
MMZ27333BT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
VCC2
VCC1
L2
R3
C9
C10
C12
C11
L1
PDET
C7
C8
Z2
C6
24
RFIN
C1
23
22
21
20
19
1
18
2
17
3
16
4
15
5
14
ACTIVE BIAS CIRCUIT
6
L3
VCC3
C13
C14
C3
Z1
RFOUT
C2
13
7
8
9
R1
10
11
12
Z1: 0.163”  0.022” Microstrip
Z2: 0.028”  0.022” Microstrip
R2
VBIAS
C5
C4
Figure 12. MMZ27333BT1 Test Circuit Schematic
Table 7. MMZ27333BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3
22 pF Chip Capacitors
04023K220BBS
AVX
C2
3.6 pF Chip Capacitor
04023J3R6BBS
AVX
C4, C9, C11, C13
1000 pF Chip Capacitors
GCM155R71E103KA37D
Murata
C5, C12
1 F Chip Capacitors
GRM188R61A105KA61D
Murata
C6
22 pF Chip Capacitor
GRM155C1H220GA01D
Murata
C7
8.2 pF Chip Capacitor
04023J8R2BBS
AVX
C8
470 pF Chip Capacitor
GRM1555C1H471JA01D
Murata
C10
0.01 F Chip Capacitor
C0603C103J5RACTU
Kemet
C14
4.7 F Chip Capacitor
GRM188R60J475KE19D
Murata
L1
56 nH Chip Inductor
0603CS-56NXJL
Coilcraft
L2
12 nH Chip Inductor
0603HC-12NXGLW
Coilcraft
L3
6.8 nH Chip Inductor
0603HC-6N8XJLW
Coilcraft
R1
1.2 k Chip Resistor
RC0402FR-071K20L
Yageo
R2
330  1/16 W Chip Resistor
CRCW0402330DFKED
Vishay
R3
0  1 A Chip Resistor
ERJ2GEY0R00V
Panasonic
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
MMZ27333BT1
8
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
VCC3
VDECT
VCC1
VCC2
C12
C11
R3
C10
C9
C8
C14
C13
L3
L2
RFIN
C7
L1
C1
C4
C6
C2
C5
R1 R2
RFOUT
C3
M70506
QFN 44--24E
Rev. 1
VBIAS
PCB actual size: 1.30  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 13. MMZ27333BT1 Test Circuit Component Layout
Table 7. MMZ27333BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3
22 pF Chip Capacitors
04023K220BBS
AVX
C2
3.6 pF Chip Capacitor
04023J3R6BBS
AVX
C4, C9, C11, C13
1000 pF Chip Capacitors
GCM155R71E103KA37D
Murata
C5, C12
1 F Chip Capacitors
GRM188R61A105KA61D
Murata
C6
22 pF Chip Capacitor
GRM155C1H220GA01D
Murata
C7
8.2 pF Chip Capacitor
04023J8R2BBS
AVX
C8
470 pF Chip Capacitor
GRM1555C1H471JA01D
Murata
C10
0.01 F Chip Capacitor
C0603C103J5RACTU
Kemet
C14
4.7 F Chip Capacitor
GRM188R60J475KE19D
Murata
L1
56 nH Chip Inductor
0603CS-56NXJL
Coilcraft
L2
12 nH Chip Inductor
0603HC-12NXGLW
Coilcraft
L3
6.8 nH Chip Inductor
0603HC-6N8XJLW
Coilcraft
R1
1.2 k Chip Resistor
RC0402FR-071K20L
Yageo
R2
330  1/16 W Chip Resistor
CRCW0402330DFKED
Vishay
R3
0  1 A Chip Resistor
ERJ2GEY0R00V
Panasonic
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ27333BT1
RF Device Data
Freescale Semiconductor, Inc.
9
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
38
–14
–16
37
–18
36
S21 (dB)
S11 (dB)
–20
–22
–24
35
34
–26
33
–28
–30
1900
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
2000
2100
2200
32
1900
2300
2000
2100
2200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 14. S11 versus Frequency
Figure 15. S21 versus Frequency
2300
–6
–8
–10
S22 (dB)
–12
–14
–16
–18
–20
–22
1900
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
2000
2100
2200
2300
f, FREQUENCY (MHz)
Figure 16. S22 versus Frequency
MMZ27333BT1
10
RF Device Data
Freescale Semiconductor, Inc.
38
Gps, POWER GAIN (dB)
37
500
ICC, COLLECTOR CURRENT (mA)
–38
V
=V
=V
=V
= 5 Vdc, f = 2140 MHz
–40 CC1 CC2 CC3 BIAS
Single--Carrier W--CDMA 3GPP TM1 Unclipped
–42
–44
–46
–48
–50
–52
–54
–56
–58
–60
–62
–64
10
12
14
16
18
20
22
24
350
ICC3
300
250
200
150
ICC2
100
ICC1
50
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 17. ACPR versus Output Power
Figure 18. Stage Collector Current versus
Output Power
26
2
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
1.8
36
35
34
33
32
10
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2140 MHz
450 Single--Carrier W--CDMA 3GPP TM1 Unclipped
400
0
10
26
PDET, POWER DETECTOR (V)
ACPR (dBc)
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, 5 VOLT OPERATION
1.6
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
1.4
1.2
1
0.8
0.6
0.4
0.2
12
14
16
18
20
22
24
26
0
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 19. Power Gain versus Output Power
Figure 20. Power Detector versus Output Power
MMZ27333BT1
RF Device Data
Freescale Semiconductor, Inc.
11
0.50
3.00
4.40
0.30
2.6  2.6 solder pad with thermal
via structure. All dimensions in mm.
Figure 21. PCB Pad Layout for 24--Lead QFN 4  4
MA13
WLYW
Figure 22. Product Marking
MMZ27333BT1
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMZ27333BT1
RF Device Data
Freescale Semiconductor, Inc.
13
MMZ27333BT1
14
RF Device Data
Freescale Semiconductor, Inc.
MMZ27333BT1
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Jan. 2016
Description
 Initial Release of Data Sheet
MMZ27333BT1
16
RF Device Data
Freescale Semiconductor, Inc.
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E 2016 Freescale Semiconductor, Inc.
MMZ27333BT1
Document
Number:
RF
Device
Data MMZ27333B
Rev. 0, 1/2016Semiconductor, Inc.
Freescale
17
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