Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMA20312BV
Rev. 2, 9/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMA20312BVT1
High Efficiency/Linearity Amplifier
The MMA20312BV is a 2-- stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 1800 to 2200 MHz such as
CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V.
The amplifier is housed in a cost--effective, surface mount QFN plastic package.
1800--2200 MHz, 27.2 dB
30.5 dBm
InGaP HBT LINEAR AMPLIFIER
 Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm
Frequency
Gps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
1880 MHz
29.0
--47.4
9.1
TD--SCDMA
1920 MHz
29.0
--46.7
9.0
TD--SCDMA
2010 MHz
27.4
--52.0
9.3
TD--SCDMA
2025 MHz
26.8
--50.0
9.5
TD--SCDMA
2140 MHz
27.0
--51.7
9.4
W--CDMA
QFN 3  3
Features








Frequency: 1800--2200 MHz
P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
Active Bias Control (adjustable externally)
Single 3 to 5 V Supply
Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Rating
Symbol
1800
MHz
2140
MHz
2200
MHz
Unit
Small--Signal Gain
(S21)
Gp
28.8
26.4
25.5
dB
Input Return Loss
(S11)
IRL
--17.6
--10.9
--9.7
dB
Output Return Loss
(S22)
ORL
--20.3
--14.7
--13.7
dB
Power Output @ 1dB
Compression
P1dB
30.5
30.5
30.5
dBm
Characteristic
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
550
mA
RF Input Power
Pin
14
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system,
CW Application Circuit
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 86C, VCC1 = VCC2 = VBIAS = 5 Vdc
Symbol
Value (2)
Unit
RJC
52
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2011, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BVT1
1
Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale W--CDMA
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21) (1)
Gp
23.6
27.2
—
dB
Input Return Loss (S11)
IRL
—
--10.7
—
dB
Output Return Loss (S22)
ORL
—
--15.5
—
dB
Power Output @ 1dB Compression, CW
P1dB
—
28.2
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
44.5
—
dBm
Noise Figure
NF
—
3.3
—
dB
Supply Current (1)
ICQ
62.5
70
77
mA
Supply Voltage
VCC
—
5
—
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
0, rated to 150 V
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
VBA2
VBA1
VCC1
VCC1
RFout
VBIAS
RFin
VCC2
GND
VBA2 VCC1 VCC1
RFout
BIAS
CIRCUIT
GND
12
11
10
VBA1
1
9
RFout
VBIAS
2
8
RFout
RFin
3
7
VCC2
4
5
6
GND GND GND
GND
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMA20312BVT1
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
Z5
R1
R2
VCC1
C8
Z4
12
C5
1
11
C17
C18
C19
10
9
BIAS
CIRCUIT
8
2
RF
OUTPUT
Z3
Z2
C4
C3
RF
INPUT
Z1
3
7
C1
C2
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
0.250 x 0.030 Microstrip
0.035 x 0.030 Microstrip
0.283 x 0.030 Microstrip
Z4
Z5
Z6
C16
0.080 x 0.030 Microstrip
0.155 x 0.010 Microstrip
0.045 x 0.010 Microstrip
Figure 3. MMA20312BV Test Circuit Schematic — TD--SCDMA, 5 Volt Operation
Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2
1.8 pF Chip Capacitor
06035J1R8BBS
AVX
C3
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C9
Components Not Placed
C8, C18
1 F Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 F Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 F Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330  Chip Resistor
RR0816Q--331--D
Susumu
R2
1.5 k Chip Resistor
RR0816Q--152--D
Susumu
PCB
0.01, r = 3.38
680--338
Isola
Note: Component numbers C6, C7 and C9 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
3
VCC1
VBIAS(1)
C8
C19
R1
R2
C7*
C6*
C17 C18
C9*
RFOUT
RFIN
C5
C1
C2
L1
C3
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7* and C9* are labeled on board but not placed.
Figure 4. MMA20312BV Test Circuit Component Layout — TD--SCDMA, 5 Volt Operation
Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2
1.8 pF Chip Capacitor
06035J1R8BBS
AVX
C3
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C9
Components Not Placed
C8, C18
1 F Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 F Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 F Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330  Chip Resistor
RR0816Q--331--D
Susumu
R2
1.5 k Chip Resistor
RR0816Q--152--D
Susumu
PCB
0.01, r = 3.38
680--338
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — TD--SCDMA
0
35
--5
30
--40C
25
--15
S21 (dB)
S11 (dB)
--10
85C
--20
25C
--25
85C
25C
20
15
10
--30
--35
1500
--40C
5
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
0
1500
2750
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
2750
0
--5
--40C
S22 (dB)
--10
85C
--15
25C
--20
--25
--30
--35
1500
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
2750
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — TD--SCDMA
200
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2017.5 MHz
--15
--20
180
160
140
ACPR (dBc)
--25
25C
--30
--35
ICC
--40
120
85C
--45
--50 ACPR
80
60
85C
--40C
40
--55
--60
100
--40C
20
25C
7
9
11
13
15
17
19
21
ICC, COLLECTOR CURRENT (mA)
--10
0
23
Pout, OUTPUT POWER (dBm)
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
29
Gain
45
--40C
40
Gps, POWER GAIN (dB)
28
27
35
25C
26
25
30
25
85C
24
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2017.5 MHz
23
20
--40C
15
85C
22
PAE
21
10
5
25C
20
7
9
11
13
15
17
19
21
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
23
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
31
VCC1 = VCC2 = VBIAS = 5 Vdc
30
29
--40C
28
25C
27
85C
26
25
24
1800
1850
1900
1950
2000
2050
f, FREQUENCY (MHz)
Figure 10. P1dB versus Frequency versus
Temperature, CW
MMA20312BVT1
6
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
Z5
R1
R2
Z4
12
C5
1
VCC1
C8
11
C9
C17
C18
C19
10
9
BIAS
CIRCUIT
2
8
Z3
Z2
C3
RF
INPUT
Z1
3
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
C4
7
C1
C2
RF
OUTPUT
0.218 x 0.030 Microstrip
0.068 x 0.030 Microstrip
0.250 x 0.030 Microstrip
Z4
Z5
Z6
C16
0.080 x 0.030 Microstrip
0.155 x 0.010 Microstrip
0.045 x 0.010 Microstrip
Figure 11. MMA20312BV Test Circuit Schematic — W--CDMA, 5 Volt Operation
Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2, C3
1.8 pF Chip Capacitors
06035J1R8BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7
Components Not Placed
C8, C18
1 F Chip Capacitors
GRM188R61A105KA61
Murata
C9
100 pF Chip Capacitor
GRM1885C1H101JA01
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 F Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 F Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330  Chip Resistor
RR0816Q--331--D
Susumu
R2
1500  Chip Resistor
RR0816Q--152D
Susumu
PCB
0.01, r = 3.38
680--338
Isola
Note: Component numbers C6 and C7 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
7
VCC1
R1
VBIAS(1)
C8
C19
R2
C7*
C9
C17 C18
C6*
RFIN
RFOUT
C5
C1
C2
C3
L1
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6* and C7* are labeled on board but not placed.
Figure 12. MMA20312BV Test Circuit Component Layout — W--CDMA, 5 Volt Operation
Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2, C3
1.8 pF Chip Capacitors
06035J1R8BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7
Components Not Placed
C8, C18
1 F Chip Capacitors
GRM188R61A105KA61
Murata
C9
100 pF Chip Capacitor
GRM1885C1H101JA01
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 F Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 F Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330  Chip Resistor
RR0816Q--331--D
Susumu
R2
1500  Chip Resistor
RR0816Q--152D
Susumu
PCB
0.01, r = 3.38
680--338
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — W--CDMA
200
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2140 MHz
--15
--20
180
160
140
ACPR (dBc)
--25
120
--30
ICC
--35
100
80
--40
--45
60
ACPR
--50
40
20
--55
--60
8
10
12
14
18
16
20
22
ICC, COLLECTOR CURRENT (mA)
--10
0
24
Pout, OUTPUT POWER (dBm)
Figure 13. ACPR versus Collector Current
versus Output Power
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2140 MHz
29
Gps, POWER GAIN (dB)
28
45
40
Gain
27
35
26
30
25
25
24
20
PAE
23
15
22
10
21
5
20
8
10
12
14
16
18
20
22
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
24
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 14. Power Gain versus Power Added
Efficiency versus Output Power
31
VCC1 = VCC2 = VBIAS = 5 Vdc
30
29
28
27
26
25
24
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 15. P1dB versus Frequency, CW
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
9
VBIAS
Z5
R1
R2
VCC1
C8
Z4
12
C5
1
11
C9
C17
10
9
BIAS
CIRCUIT
8
2
Z3
Z2
C3
RF
INPUT
Z1
3
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
C4
7
C1
C2
RF
OUTPUT
0.250 x 0.030 Microstrip
0.124 x 0.030 Microstrip
0.195 x 0.030 Microstrip
Z4
Z5
Z6
C16
0.080 x 0.030 Microstrip
0.048 x 0.010 Microstrip
0.045 x 0.010 Microstrip
Figure 16. MMA20312BV Test Circuit Schematic — IS--95, 3.3 Volt Operation
Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5, C9
22 pF Chip Capacitors
06033J220GBS
AVX
C2
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C3
2.4 pF Chip Capacitor
06035J2R4BBS
AVX
C4
4.7 pF Chip Capacitor
06035J4R7BBS
AVX
C6, C7, C18, C19
Components Not Placed
C8, C17
1 F Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16
4.7 F Chip Capacitor
GRM188R60J106ME47
Murata
L1
1.5 nH Chip Inductor
LL1608--FS1N5S
TOKO
R1
82  Chip Resistor
RR0816Q--820--D
Susumu
R2
510  Chip Resistor
RR0816Q--511--D
Susumu
PCB
0.01, r = 3.38
680--338
Isola
Note: Component numbers C6, C7, C18 and C19 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
10
RF Device Data
Freescale Semiconductor, Inc.
VCC1
VBIAS(1)
C8
C19*
R1
R2
C7*
C6*
C9
C17 C18*
RFIN
RFOUT
C5
C1
C2
C3
L1
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C18* and C19* are labeled on board but not placed.
Figure 17. MMA20312BV Test Circuit Component Layout — IS--95, 3.3 Volt Operation
Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5, C9
22 pF Chip Capacitors
06033J220GBS
AVX
C2
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C3
2.4 pF Chip Capacitor
06035J2R4BBS
AVX
C4
4.7 pF Chip Capacitor
06035J4R7BBS
AVX
C6, C7, C18, C19
Components Not Placed
C8, C17
1 F Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16
4.7 F Chip Capacitor
GRM188R60J106ME47
Murata
L1
1.5 nH Chip Inductor
LL1608--FS1N5S
TOKO
R1
82  Chip Resistor
RR0816Q--820--D
Susumu
R2
510  Chip Resistor
RR0816Q--511--D
Susumu
PCB
0.01, r = 3.38
680--338
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — IS--95
200
VCC1 = VCC2 = VBIAS = 3.3 Vdc
f = 1960 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
--15
--20
ACPR (dBc)
--25
--30
--35
180
160
140
120
100
ICC
--40
80
--45
60
40
ACPR
--50
20
--55
--60
8
10
12
14
16
18
20
ICC, COLLECTOR CURRENT (mA)
--10
0
22
Pout, OUTPUT POWER (dBm)
Figure 18. ACPR versus Collector Current
versus Output Power
VCC1 = VCC2 = VBIAS = 3.3 Vdc
f = 1960 MHz
29
Gps, POWER GAIN (dB)
28
27
45
Gain
40
35
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
26
25
30
25
24
20
PAE
23
15
22
10
21
5
20
8
10
12
14
16
18
20
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
22
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 19. Power Gain versus Power Added
Efficiency versus Output Power
31
30
VCC1 = VCC2 = VBIAS = 3.3 Vdc
29
28
27
26
25
24
1800
1840
1880
1920
1960
2000
f, FREQUENCY (MHz)
Figure 20. P1dB versus Frequency, CW
MMA20312BVT1
12
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
3.40
0.50
1.6  1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 21. PCB Pad Layout for QFN 3  3
MA02
YWZ
Figure 22. Product Marking
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
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PACKAGE DIMENSIONS
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MMA20312BVT1
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2011
 Initial Release of Data Sheet
1
Dec. 2011
 Updated minimum operating voltage from 3.3 V to 3 V to reflect actual device capability, p. 1
 All references to “VCTRL” in the data sheet tables, test circuit schematics and component layouts is
replaced with “VBIAS”. VBIAS is the supply voltage which sets the internal bias conditions via pins 1, 2, and
12, pp. 1--3, 5--7, 9, 10, 12. Footnote “(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]” added to
test circuit component layouts, pp. 4, 8, 11.
2
Sept. 2014
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Added Failure Analysis information, p. 17
MMA20312BVT1
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Freescale Semiconductor, Inc.
17
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Information in this document is provided solely to enable system and software
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disclaims any and all liability, including without limitation consequential or incidental
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specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
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respective owners.
E 2011, 2014 Freescale Semiconductor, Inc.
MMA20312BVT1
Document Number: MMA20312BV
Rev. 2, 9/2014
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Freescale Semiconductor, Inc.
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