Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 2, 9/2014 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V. The amplifier is housed in a cost--effective, surface mount QFN plastic package. 1800--2200 MHz, 27.2 dB 30.5 dBm InGaP HBT LINEAR AMPLIFIER Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm Frequency Gps (dB) ACPR (dBc) PAE (%) Test Signal 1880 MHz 29.0 --47.4 9.1 TD--SCDMA 1920 MHz 29.0 --46.7 9.0 TD--SCDMA 2010 MHz 27.4 --52.0 9.3 TD--SCDMA 2025 MHz 26.8 --50.0 9.5 TD--SCDMA 2140 MHz 27.0 --51.7 9.4 W--CDMA QFN 3 3 Features Frequency: 1800--2200 MHz P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit) Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit) OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit) Active Bias Control (adjustable externally) Single 3 to 5 V Supply Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Rating Symbol 1800 MHz 2140 MHz 2200 MHz Unit Small--Signal Gain (S21) Gp 28.8 26.4 25.5 dB Input Return Loss (S11) IRL --17.6 --10.9 --9.7 dB Output Return Loss (S22) ORL --20.3 --14.7 --13.7 dB Power Output @ 1dB Compression P1dB 30.5 30.5 30.5 dBm Characteristic Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 550 mA RF Input Power Pin 14 dBm Storage Temperature Range Tstg --65 to +150 C Junction Temperature TJ 175 C 1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system, CW Application Circuit Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 86C, VCC1 = VCC2 = VBIAS = 5 Vdc Symbol Value (2) Unit RJC 52 C/W 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2011, 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMA20312BVT1 1 Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale W--CDMA Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) (1) Gp 23.6 27.2 — dB Input Return Loss (S11) IRL — --10.7 — dB Output Return Loss (S22) ORL — --15.5 — dB Power Output @ 1dB Compression, CW P1dB — 28.2 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 44.5 — dBm Noise Figure NF — 3.3 — dB Supply Current (1) ICQ 62.5 70 77 mA Supply Voltage VCC — 5 — V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 0, rated to 150 V Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 6. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 1. Specified data is based on performance of soldered down part in W--CDMA application circuit. VBA2 VBA1 VCC1 VCC1 RFout VBIAS RFin VCC2 GND VBA2 VCC1 VCC1 RFout BIAS CIRCUIT GND 12 11 10 VBA1 1 9 RFout VBIAS 2 8 RFout RFin 3 7 VCC2 4 5 6 GND GND GND GND Figure 1. Functional Block Diagram Figure 2. Pin Connections MMA20312BVT1 2 RF Device Data Freescale Semiconductor, Inc. VBIAS Z5 R1 R2 VCC1 C8 Z4 12 C5 1 11 C17 C18 C19 10 9 BIAS CIRCUIT 8 2 RF OUTPUT Z3 Z2 C4 C3 RF INPUT Z1 3 7 C1 C2 Z6 L1 4 5 VCC2 6 C13 Z1 Z2 Z3 0.250 x 0.030 Microstrip 0.035 x 0.030 Microstrip 0.283 x 0.030 Microstrip Z4 Z5 Z6 C16 0.080 x 0.030 Microstrip 0.155 x 0.010 Microstrip 0.045 x 0.010 Microstrip Figure 3. MMA20312BV Test Circuit Schematic — TD--SCDMA, 5 Volt Operation Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation Part Description Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C9 Components Not Placed C8, C18 1 F Chip Capacitors GRM188R61A105KA61 Murata C13 10 pF Chip Capacitor 06035J100GBS AVX C16, C19 10 F Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 F Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 330 Chip Resistor RR0816Q--331--D Susumu R2 1.5 k Chip Resistor RR0816Q--152--D Susumu PCB 0.01, r = 3.38 680--338 Isola Note: Component numbers C6, C7 and C9 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted. MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 3 VCC1 VBIAS(1) C8 C19 R1 R2 C7* C6* C17 C18 C9* RFOUT RFIN C5 C1 C2 L1 C3 C4 C13 C16 QFN 3x3--12B Rev. 0 VCC2 (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7* and C9* are labeled on board but not placed. Figure 4. MMA20312BV Test Circuit Component Layout — TD--SCDMA, 5 Volt Operation Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation Part Description Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C9 Components Not Placed C8, C18 1 F Chip Capacitors GRM188R61A105KA61 Murata C13 10 pF Chip Capacitor 06035J100GBS AVX C16, C19 10 F Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 F Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 330 Chip Resistor RR0816Q--331--D Susumu R2 1.5 k Chip Resistor RR0816Q--152--D Susumu PCB 0.01, r = 3.38 680--338 Isola Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted. (Test Circuit Component Designations and Values table repeated for reference.) MMA20312BVT1 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — TD--SCDMA 0 35 --5 30 --40C 25 --15 S21 (dB) S11 (dB) --10 85C --20 25C --25 85C 25C 20 15 10 --30 --35 1500 --40C 5 VCC1 = VCC2 = VBIAS = 5 Vdc 1750 2000 2250 2500 0 1500 2750 VCC1 = VCC2 = VBIAS = 5 Vdc 1750 2000 2250 2500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. S11 versus Frequency versus Temperature Figure 6. S21 versus Frequency versus Temperature 2750 0 --5 --40C S22 (dB) --10 85C --15 25C --20 --25 --30 --35 1500 VCC1 = VCC2 = VBIAS = 5 Vdc 1750 2000 2250 2500 2750 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — TD--SCDMA 200 VCC1 = VCC2 = VBIAS = 5 Vdc f = 2017.5 MHz --15 --20 180 160 140 ACPR (dBc) --25 25C --30 --35 ICC --40 120 85C --45 --50 ACPR 80 60 85C --40C 40 --55 --60 100 --40C 20 25C 7 9 11 13 15 17 19 21 ICC, COLLECTOR CURRENT (mA) --10 0 23 Pout, OUTPUT POWER (dBm) Figure 8. ACPR versus Collector Current versus Output Power versus Temperature 29 Gain 45 --40C 40 Gps, POWER GAIN (dB) 28 27 35 25C 26 25 30 25 85C 24 VCC1 = VCC2 = VBIAS = 5 Vdc f = 2017.5 MHz 23 20 --40C 15 85C 22 PAE 21 10 5 25C 20 7 9 11 13 15 17 19 21 PAE, POWER ADDED EFFICIENCY (%) 50 30 0 23 Pout, OUTPUT POWER (dBm) P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 9. Power Gain versus Power Added Efficiency versus Output Power versus Temperature 31 VCC1 = VCC2 = VBIAS = 5 Vdc 30 29 --40C 28 25C 27 85C 26 25 24 1800 1850 1900 1950 2000 2050 f, FREQUENCY (MHz) Figure 10. P1dB versus Frequency versus Temperature, CW MMA20312BVT1 6 RF Device Data Freescale Semiconductor, Inc. VBIAS Z5 R1 R2 Z4 12 C5 1 VCC1 C8 11 C9 C17 C18 C19 10 9 BIAS CIRCUIT 2 8 Z3 Z2 C3 RF INPUT Z1 3 Z6 L1 4 5 VCC2 6 C13 Z1 Z2 Z3 C4 7 C1 C2 RF OUTPUT 0.218 x 0.030 Microstrip 0.068 x 0.030 Microstrip 0.250 x 0.030 Microstrip Z4 Z5 Z6 C16 0.080 x 0.030 Microstrip 0.155 x 0.010 Microstrip 0.045 x 0.010 Microstrip Figure 11. MMA20312BV Test Circuit Schematic — W--CDMA, 5 Volt Operation Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation Part Description Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2, C3 1.8 pF Chip Capacitors 06035J1R8BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7 Components Not Placed C8, C18 1 F Chip Capacitors GRM188R61A105KA61 Murata C9 100 pF Chip Capacitor GRM1885C1H101JA01 Murata C13 10 pF Chip Capacitor 06035J100GBS AVX C16, C19 10 F Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 F Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 330 Chip Resistor RR0816Q--331--D Susumu R2 1500 Chip Resistor RR0816Q--152D Susumu PCB 0.01, r = 3.38 680--338 Isola Note: Component numbers C6 and C7 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted. MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 7 VCC1 R1 VBIAS(1) C8 C19 R2 C7* C9 C17 C18 C6* RFIN RFOUT C5 C1 C2 C3 L1 C4 C13 C16 QFN 3x3--12B Rev. 0 VCC2 (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6* and C7* are labeled on board but not placed. Figure 12. MMA20312BV Test Circuit Component Layout — W--CDMA, 5 Volt Operation Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation Part Description Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2, C3 1.8 pF Chip Capacitors 06035J1R8BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7 Components Not Placed C8, C18 1 F Chip Capacitors GRM188R61A105KA61 Murata C9 100 pF Chip Capacitor GRM1885C1H101JA01 Murata C13 10 pF Chip Capacitor 06035J100GBS AVX C16, C19 10 F Chip Capacitors GRM188R60J106ME47 Murata C17 0.1 F Chip Capacitor GRM188R71H104KA93 Murata L1 1.8 nH Chip Inductor LL1608--FS1N8S TOKO R1 330 Chip Resistor RR0816Q--331--D Susumu R2 1500 Chip Resistor RR0816Q--152D Susumu PCB 0.01, r = 3.38 680--338 Isola Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted. (Test Circuit Component Designations and Values table repeated for reference.) MMA20312BVT1 8 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — W--CDMA 200 VCC1 = VCC2 = VBIAS = 5 Vdc f = 2140 MHz --15 --20 180 160 140 ACPR (dBc) --25 120 --30 ICC --35 100 80 --40 --45 60 ACPR --50 40 20 --55 --60 8 10 12 14 18 16 20 22 ICC, COLLECTOR CURRENT (mA) --10 0 24 Pout, OUTPUT POWER (dBm) Figure 13. ACPR versus Collector Current versus Output Power VCC1 = VCC2 = VBIAS = 5 Vdc f = 2140 MHz 29 Gps, POWER GAIN (dB) 28 45 40 Gain 27 35 26 30 25 25 24 20 PAE 23 15 22 10 21 5 20 8 10 12 14 16 18 20 22 PAE, POWER ADDED EFFICIENCY (%) 50 30 0 24 Pout, OUTPUT POWER (dBm) P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 14. Power Gain versus Power Added Efficiency versus Output Power 31 VCC1 = VCC2 = VBIAS = 5 Vdc 30 29 28 27 26 25 24 2100 2120 2140 2160 2180 2200 f, FREQUENCY (MHz) Figure 15. P1dB versus Frequency, CW MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 9 VBIAS Z5 R1 R2 VCC1 C8 Z4 12 C5 1 11 C9 C17 10 9 BIAS CIRCUIT 8 2 Z3 Z2 C3 RF INPUT Z1 3 Z6 L1 4 5 VCC2 6 C13 Z1 Z2 Z3 C4 7 C1 C2 RF OUTPUT 0.250 x 0.030 Microstrip 0.124 x 0.030 Microstrip 0.195 x 0.030 Microstrip Z4 Z5 Z6 C16 0.080 x 0.030 Microstrip 0.048 x 0.010 Microstrip 0.045 x 0.010 Microstrip Figure 16. MMA20312BV Test Circuit Schematic — IS--95, 3.3 Volt Operation Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation Part Description Part Number Manufacturer C1, C5, C9 22 pF Chip Capacitors 06033J220GBS AVX C2 2.2 pF Chip Capacitor 06035J2R2BBS AVX C3 2.4 pF Chip Capacitor 06035J2R4BBS AVX C4 4.7 pF Chip Capacitor 06035J4R7BBS AVX C6, C7, C18, C19 Components Not Placed C8, C17 1 F Chip Capacitors GRM188R61A105KA61 Murata C13 10 pF Chip Capacitor 06035J100GBS AVX C16 4.7 F Chip Capacitor GRM188R60J106ME47 Murata L1 1.5 nH Chip Inductor LL1608--FS1N5S TOKO R1 82 Chip Resistor RR0816Q--820--D Susumu R2 510 Chip Resistor RR0816Q--511--D Susumu PCB 0.01, r = 3.38 680--338 Isola Note: Component numbers C6, C7, C18 and C19 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted. MMA20312BVT1 10 RF Device Data Freescale Semiconductor, Inc. VCC1 VBIAS(1) C8 C19* R1 R2 C7* C6* C9 C17 C18* RFIN RFOUT C5 C1 C2 C3 L1 C4 C13 C16 QFN 3x3--12B Rev. 0 VCC2 (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C6*, C7*, C18* and C19* are labeled on board but not placed. Figure 17. MMA20312BV Test Circuit Component Layout — IS--95, 3.3 Volt Operation Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation Part Description Part Number Manufacturer C1, C5, C9 22 pF Chip Capacitors 06033J220GBS AVX C2 2.2 pF Chip Capacitor 06035J2R2BBS AVX C3 2.4 pF Chip Capacitor 06035J2R4BBS AVX C4 4.7 pF Chip Capacitor 06035J4R7BBS AVX C6, C7, C18, C19 Components Not Placed C8, C17 1 F Chip Capacitors GRM188R61A105KA61 Murata C13 10 pF Chip Capacitor 06035J100GBS AVX C16 4.7 F Chip Capacitor GRM188R60J106ME47 Murata L1 1.5 nH Chip Inductor LL1608--FS1N5S TOKO R1 82 Chip Resistor RR0816Q--820--D Susumu R2 510 Chip Resistor RR0816Q--511--D Susumu PCB 0.01, r = 3.38 680--338 Isola Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted. (Test Circuit Component Designations and Values table repeated for reference.) MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 11 TYPICAL CHARACTERISTICS — IS--95 200 VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 1960 MHz Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth --15 --20 ACPR (dBc) --25 --30 --35 180 160 140 120 100 ICC --40 80 --45 60 40 ACPR --50 20 --55 --60 8 10 12 14 16 18 20 ICC, COLLECTOR CURRENT (mA) --10 0 22 Pout, OUTPUT POWER (dBm) Figure 18. ACPR versus Collector Current versus Output Power VCC1 = VCC2 = VBIAS = 3.3 Vdc f = 1960 MHz 29 Gps, POWER GAIN (dB) 28 27 45 Gain 40 35 Single--Carrier IS--95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth 26 25 30 25 24 20 PAE 23 15 22 10 21 5 20 8 10 12 14 16 18 20 PAE, POWER ADDED EFFICIENCY (%) 50 30 0 22 Pout, OUTPUT POWER (dBm) P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 19. Power Gain versus Power Added Efficiency versus Output Power 31 30 VCC1 = VCC2 = VBIAS = 3.3 Vdc 29 28 27 26 25 24 1800 1840 1880 1920 1960 2000 f, FREQUENCY (MHz) Figure 20. P1dB versus Frequency, CW MMA20312BVT1 12 RF Device Data Freescale Semiconductor, Inc. 3.00 0.70 0.30 2.00 3.40 0.50 1.6 1.6 solder pad with thermal via structure. All dimensions in mm. Figure 21. PCB Pad Layout for QFN 3 3 MA02 YWZ Figure 22. Product Marking MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS MMA20312BVT1 14 RF Device Data Freescale Semiconductor, Inc. MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 15 MMA20312BVT1 16 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Aug. 2011 Initial Release of Data Sheet 1 Dec. 2011 Updated minimum operating voltage from 3.3 V to 3 V to reflect actual device capability, p. 1 All references to “VCTRL” in the data sheet tables, test circuit schematics and component layouts is replaced with “VBIAS”. VBIAS is the supply voltage which sets the internal bias conditions via pins 1, 2, and 12, pp. 1--3, 5--7, 9, 10, 12. Footnote “(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]” added to test circuit component layouts, pp. 4, 8, 11. 2 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 Added Failure Analysis information, p. 17 MMA20312BVT1 RF Device Data Freescale Semiconductor, Inc. 17 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2011, 2014 Freescale Semiconductor, Inc. MMA20312BVT1 Document Number: MMA20312BV Rev. 2, 9/2014 18 RF Device Data Freescale Semiconductor, Inc.