Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMZ25333B
Rev. 1, 8/2014
2 W High Gain Power Amplifier for
Cellular Infrastructure
InGaP GaAs HBT
The MMZ25333B is a versatile 3--stage power amplifier targeted at driver and
pre--driver applications for macro and micro base stations and final--stage
applications for small cells. Its versatile design allows operation in any
frequency band from 1500 to 2700 MHz providing gain of more than 40 dB. The
device operates off a 5 V supply, and its bias currents and portions of the
matching networks are adjustable for optimum performance in any specific
application. It is housed in a QFN 4  4 surface mount package.
MMZ25333BT1
1500–2700 MHz, 44.2 dB, 31.7 dBm
InGaP HBT LINEAR AMPLIFIER
 Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc,
ICQ = 265 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
ICC
Total
Test Signal
2600 MHz
18.0
42.6
–50.8
296
W--CDMA
2140 MHz
17.0
43.7
–50.7
293
W--CDMA
QFN 4  4
 Typical Output PA Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc,
ICQ = 450 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
ICC
Total
Test Signal
2600 MHz
22.2
42.7
–48.0
501
W--CDMA
Features








P1dB: up to 33 dBm
Gain: More than 40 dB
5 V Supply
Excellent Linearity
High Efficiency
Single--ended Power Detector
Band Tunable
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
VCC1/
RFout1 RFin2
VCC2
PDET
VCC3/RFout3
RFin1
VCC3/RFout3
VCC3/RFout3
BIAS
CIRCUIT
VBA1
VBA2
VBIAS
Figure 1. Functional Block Diagram
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ25333BT1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
VCC
6
V
ICC
66
240
960
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg
–65 to +150
C
Junction Temperature
TJ
175
C
Symbol
Value (1)
Supply Voltage
Supply Current
ICC1
ICC2
ICC3
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 104C, VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
RJC
Stage 1
Stage 2
Stage 3
Unit
C/W
28
68
21
Table 3. Electrical Characteristics (VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale PA
Driver Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
Input Return Loss (S11)
IRL
40.4
43.0
—
dB
—
–12.2
—
dB
Output Return Loss (S22)
ORL
—
–7.1
—
dB
Power Output @ 1dB Compression
P1dB
—
32.0
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
42.8
—
dBm
Total Supply Current (ICC1 + ICC2 + ICC3 + IBIAS)
ICQ
244
265
284
mA
Supply Voltage
VCC
—
5
—
V
Characteristic
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
MMZ25333BT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
1
260
C
Per JESD22--A113, IPC/JEDEC J--STD--020
VCC1/
RFout1 N.C. RFin2 N.C. VCC2 PDET
24
23
22
21
20
19
N.C.
1
18
N.C.
2
17 VCC3/RFout3
N.C.
3
RFin1 4
GND
N.C.
16 VCC3/RFout3
15 VCC3/RFout3
N.C.
5
14
N.C.
N.C.
6
13
N.C.
7
8
9
10
11
12
N.C. VBA1 VBA2 VBIAS N.C. N.C.
(Top View)
Note: Exposed backside of the package is DC and RF
ground. N.C. can be connected to GND.
Figure 2. Pin Connections
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz
VCC2
VCC1
L2
R3
C11
C10
C16
C12
L1
C15
PDET
C18
C6
C5
L3
24
RF
INPUT
23
22
21
20
VCC3
19
1
18
2
17
3
16
C13
RF
OUTPUT
Z1
4
15
5
14
C17
C4
C1
ACTIVE BIAS CIRCUIT
6
7
8
9
R1
10
C2
C3
13
11
12
R2
VBIAS
C14
C9
Note: Component number C7 is not used.
Z1
0.143 x 0.022 Microstrip
Figure 3. MMZ25333BT1 Test Circuit Schematic
Table 6. MMZ25333BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4, C5
22 pF Chip Capacitors
04023J220BBS
AVX
C2
2 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.5 pF Chip Capacitor
04023J1R5BBS
AVX
C6
7.5 pF Chip Capacitor
04023J7R5BBS
AVX
C8
Component Not Placed
C9, C11, C12, C13
1000 pF Chip Capacitors
GCM155R71E103KA37
Murata
C10
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C14, C16
1 F Chip Capacitors
GRM188R61A105KE15
Murata
C15
0.01 F Chip Capacitor
C0603C103J5RAC
Kemet
C17
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C18
2.2 pF Chip Capacitor
04023J12R2BBS
AVX
L1
56 nH Chip Inductor
0603HC-56NX
Coilcraft
L2
10 nH Chip Inductor
0603HC-10NX
Coilcraft
L3
6.8 nH Chip Inductor
0603HC-6N8X
Coilcraft
L4
Component Not Placed
R1 (ICQ = 265 mA)
1.8 k, 1/16 W Chip Resistor
CR05-182J-B
Kyocera
R2 (ICQ = 265 mA)
680 , 1/16 W Chip Resistor
CR05-681J-B
Kyocera
R1 (ICQ = 450 mA)
1.2 k, 1/16 W Chip Resistor
CR05-122J-B
Kyocera
R2 (ICQ = 450 mA)
330 , 1/16 W Chip Resistor
CR05-331J-B
Kyocera
R3
27 , 1/10 W Chip Resistor
CR10-270J-T
Kyocera
M70506
MTL
PCB
Rogers RO4350B, 0.010, r = 3.66
Note: Component numbers C8 and L4 are labeled on board but not placed.
MMZ25333BT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2500–2700 MHz
VCC3
VDECT
C12
L4*
C15
C11
RFIN
VCC2
VCC1
C16
R3
L2
C18
L1
C10
C17
C6
C13
L3
RFOUT
C5
C9
C1
R1 R2
C8*
C2
C3 C4
C14
QFN 4x4--24E
Rev. 1 M70506
VBIAS(1)
PCB actual size: 1.3  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component number C7 is not used. Component numbers C8* and L4* are labeled on board but not placed.
Figure 4. MMZ25333BT1 Test Circuit Component Layout
Table 6. MMZ25333BT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4, C5
22 pF Chip Capacitors
04023J220BBS
AVX
C2
2 pF Chip Capacitor
04023J2R0BBS
AVX
C3
1.5 pF Chip Capacitor
04023J1R5BBS
AVX
C6
7.5 pF Chip Capacitor
04023J7R5BBS
AVX
C8
Component Not Placed
C9, C11, C12, C13
1000 pF Chip Capacitors
GCM155R71E103KA37
Murata
C10
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C14, C16
1 F Chip Capacitors
GRM188R61A105KE15
Murata
C15
0.01 F Chip Capacitor
C0603C103J5RAC
Kemet
C17
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C18
2.2 pF Chip Capacitor
04023J12R2BBS
AVX
L1
56 nH Chip Inductor
0603HC-56NX
Coilcraft
L2
10 nH Chip Inductor
0603HC-10NX
Coilcraft
L3
6.8 nH Chip Inductor
0603HC-6N8X
Coilcraft
L4
Component Not Placed
R1 (ICQ = 265 mA)
1.8 k, 1/16 W Chip Resistor
CR05-182J-B
Kyocera
R2 (ICQ = 265 mA)
680 , 1/16 W Chip Resistor
CR05-681J-B
Kyocera
R1 (ICQ = 450 mA)
1.2 k, 1/16 W Chip Resistor
CR05-122J-B
Kyocera
R2 (ICQ = 450 mA)
330 , 1/16 W Chip Resistor
CR05-331J-B
Kyocera
R3
27 , 1/10 W Chip Resistor
CR10-270J-T
Kyocera
PCB
Rogers RO4350B, 0.010, r = 3.66
M70506
(Test Circuit Component Designations and Values table repeated for reference.)
MTL
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
5
--2
50
--6
48
--10
46
85C
--14
--18
S21 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 265 mA
25C
--40C
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA
--26
--30
2400
44
2480
2560
2640
2720
38
2800
25C
42
40
--22
--40C
36
2400
85C
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA
2480
2560
2640
2720
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
2800
0
--2
--40C
S22 (dB)
--4
--6
25C
--8
--10
85C
--12
--14
2400
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA
2480
2560
2640
2720
2800
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMZ25333BT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 265 mA
--33
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
--36
--39
ACPR (dBc)
--42
--45
85C
--48
--40C
--51
25C
--54
--57
--60
--63
10
12
14
16
20
18
22
24
Pout, OUTPUT POWER (dBm)
Figure 8. ACPR versus Output Power versus
Temperature
50
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
270
240
48
210
25C
180
--40C
150
120
90
85C
25C
--40C
60
ICC2
85C
0
12
14
16
20
18
22
25C
42
40
85C
38
36
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
32
Minimal Temperature Variation
10
44
34
ICC1
30
--40C
46
ICC3
Gps, POWER GAIN (dB)
ICC, COLLECTOR CURRENT (mA)
300
30
24
10
12
14
16
18
20
22
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 9. Stage Collector Current versus Output
Power versus Temperature
Figure 10. Power Gain versus Output Power
versus Temperature
24
2
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
PDET, POWER DETECTOR (V)
1.8
1.6
1.4
1.2
1
25C
0.8
85C
0.6
--40C
0.4
0.2
0
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Figure 11. Power Detector versus Output Power
versus Temperature
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
7
--6
46
--8
45
--10
44
--12
43
S21 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 450 mA
--14
42
41
--16
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 450 mA
--18
--20
2400
2480
2560
2640
2720
40
2800
39
2400
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 450 mA
2480
2560
2640
2720
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 12. S11 versus Frequency
Figure 13. S21 versus Frequency
2800
0
--2
S22 (dB)
--4
--6
--8
--10
--12
--14
2400
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 450 mA
2480
2560
2640
2720
2800
f, FREQUENCY (MHz)
Figure 14. S22 versus Frequency
MMZ25333BT1
8
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 2500–2700 MHz, ICQ = 450 mA
--33
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 450 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
--36
--39
ACPR (dBc)
--42
--45
--48
--51
--54
--57
--60
--63
10
12
14
16
18
20
22
26
24
Pout, OUTPUT POWER (dBm)
Figure 15. ACPR versus Output Power
50
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 450 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
450
400
48
46
Gps, POWER GAIN (dB)
ICC, COLLECTOR CURRENT (mA)
500
ICC3
350
300
250
200
150
ICC2
100
0
10
12
14
16
18
20
42
40
38
36
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 450 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
34
ICC1
50
44
32
22
24
30
26
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 16. Stage Collector Current versus
Output Power
Figure 17. Power Gain versus Output Power
26
2
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 450 mA, f = 2600 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
PDET, POWER DETECTOR (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
10
12
14
16
18
20
22
24
26
Pout, OUTPUT POWER (dBm)
Figure 18. Power Detector versus Output Power
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
9
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, ICQ = 265 mA
VCC2
VCC1
R3
C11
C10
C12
L1
C15
PDET
L2
C18
C16
C6
C5
L3
24
RF
INPUT
23
22
21
20
VCC3
19
1
18
2
17
3
16
C13
RF
OUTPUT
Z1
4
15
5
14
C17
C4
C1
ACTIVE BIAS CIRCUIT
6
7
8
9
R1
10
C3
13
11
12
R2
VBIAS
C14
C9
Note: Component number C7 is not used.
Z1
0.163 x 0.022 Microstrip
Figure 19. MMZ25333BT1 Test Circuit Schematic
Table 7. MMZ25333BT1 Test Circuit Component Designations and Values
Part
Description
C1, C4, C5
22 pF Chip Capacitors
C2
Component Not Placed
C3
C6
C8
Component Not Placed
C9, C11, C12, C13
C10
Part Number
Manufacturer
04023J220BBS
AVX
3.6 pF Chip Capacitor
04023J3R6BBS
AVX
8.2 pF Chip Capacitor
04023J8R2BBS
AVX
1000 pF Chip Capacitors
GCM155R71E103KA37
Murata
470 pF Chip Capacitor
GRM1555C1H471JA01
Murata
C14, C16
1 F Chip Capacitors
GRM188R61A105KE15
Murata
C15
0.01 F Chip Capacitor
C0603C103J5RAC
Kemet
C17
4.7 F Chip Capacitor
GRM188R60J475KE19
Murata
C18
2.2 pF Chip Capacitor
04023J12R2BBS
AVX
L1
56 nH Chip Inductor
0603HC-56NX
Coilcraft
L2
12 nH Chip Inductor
0603HC-12NX
Coilcraft
L3
6.8 nH Chip Inductor
0603HC-6N8X
Coilcraft
L4
Component Not Placed
R1 (ICQ = 265 mA)
1.8 k, 1/16 W Chip Resistor
CR05-182J-B
Kyocera
R2 (ICQ = 265 mA)
680 , 1/16 W Chip Resistor
CR05-681J-B
Kyocera
R3
27 , 1/10 W Chip Resistor
CR10-270J-T
Kyocera
M70506
MTL
PCB
Rogers RO4350B, 0.010, r = 3.66
Note: Component numbers C2, C8 and L4 are labeled on board but not placed.
MMZ25333BT1
10
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2110–2170 MHz, ICQ = 265 mA
C12
L4*
C10
C17
C13
L2 C6
C18
L1
VCC3
C16
VDECT
VCC2
VCC1
RFIN
R3
C15
C11
L3
RFOUT
C5
C2*
C9
C1
C3
C8*
R1 R2
C4
C14
QFN 4x4--24E
Rev. 1 M70506
VBIAS(1)
PCB actual size: 1.3  1.46.
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component number C7 is not used. Component numbers C2*, C8* and L4* are labeled on board but not placed.
Figure 20. MMZ25333BT1 Test Circuit Component Layout
Table 7. MMZ25333BT1 Test Circuit Component Designations and Values
C1, C4, C5
Part
Description
22 pF Chip Capacitors
Part Number
04023J220BBS
Manufacturer
AVX
C2
Component Not Placed
C3
3.6 pF Chip Capacitor
04023J3R6BBS
AVX
C6
C8
C9, C11, C12, C13
C10
C14, C16
C15
C17
C18
L1
L2
L3
L4
R1 (ICQ = 265 mA)
R2 (ICQ = 265 mA)
R3
PCB
8.2 pF Chip Capacitor
Component Not Placed
1000 pF Chip Capacitors
470 pF Chip Capacitor
1 F Chip Capacitors
0.01 F Chip Capacitor
4.7 F Chip Capacitor
2.2 pF Chip Capacitor
56 nH Chip Inductor
12 nH Chip Inductor
6.8 nH Chip Inductor
Component Not Placed
1.8 k, 1/16 W Chip Resistor
680 , 1/16 W Chip Resistor
27 , 1/10 W Chip Resistor
Rogers RO4350B, 0.010, r = 3.66
04023J8R2BBS
AVX
GCM155R71E103KA37
GRM1555C1H471JA01
GRM188R61A105KE15
C0603C103J5RAC
GRM188R60J475KE19
04023J12R2BBS
0603HC-56NX
0603HC-12NX
0603HC-6N8X
Murata
Murata
Murata
Kemet
Murata
AVX
Coilcraft
Coilcraft
Coilcraft
CR05-182J-B
CR05-681J-B
CR10-270J-T
M70506
Kyocera
Kyocera
Kyocera
MTL
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
11
--8
46
--11
45
--14
44
--17
43
S21 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz, ICQ = 265 mA
--20
42
41
--23
--26
40
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA
--29
1900
1980
2060
2140
2220
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA
39
2300
1900
1980
2060
2140
2220
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 21. S11 versus Frequency
Figure 22. S21 versus Frequency
2300
--4
--6
S22 (dB)
--8
--10
--12
--14
--16
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA
--18
1900
1980
2060
2140
2220
2300
f, FREQUENCY (MHz)
Figure 23. S22 versus Frequency
MMZ25333BT1
12
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 2110–2170 MHz, ICQ = 265 mA
--33
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
--36
--39
ACPR (dBc)
--42
--45
--48
--51
--54
--57
--60
--63
10
12
14
16
20
18
22
24
Pout, OUTPUT POWER (dBm)
Figure 24. ACPR versus Output Power
50
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
270
240
46
ICC3
210
180
150
120
ICC2
90
60
10
12
14
16
20
18
22
44
42
40
38
36
34
ICC1
30
0
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
48
Gps, POWER GAIN (dB)
ICC, COLLECTOR CURRENT (mA)
300
32
30
24
10
12
14
16
18
20
22
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 25. Stage Collector Current versus
Output Power
Figure 26. Power Gain versus Output Power
24
2
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc
ICQ = 265 mA, f = 2140 MHz
Single--Carrier W--CDMA 3GPP TM1 Unclipped
PDET, POWER DETECTOR (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Figure 27. Power Detector versus Output Power
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
13
0.50
3.00
4.40
0.30
Solder pad with thermal via
structure. All dimensions in mm.
Figure 28. PCB Pad Layout for QFN 4  4
MA12
WLYW
Figure 29. Product Marking
MMZ25333BT1
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RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
15
MMZ25333BT1
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RF Device Data
Freescale Semiconductor, Inc.
MMZ25333BT1
RF Device Data
Freescale Semiconductor, Inc.
17
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2014
 Initial Release of Data Sheet
1
Aug. 2014
 Table 1, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 2
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RF Device Data
Freescale Semiconductor, Inc.
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E 2014 Freescale Semiconductor, Inc.
MMZ25333BT1
Document
Number:
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DataMMZ25333B
Rev.
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