Data Sheet

BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Rev. 3 — 3 December 2010
Product data sheet
1. Product profile
1.1 General description
The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount
package. It delivers 28 dBm output power at 1 dB gain compression and a superior
performance up to 2700 MHz. Its power saving features include simple quiescent current
adjustment, which allows class-AB operation and logic-level shutdown control to reduce
the supply current to 4 μA.
1.2 Features and benefits
„
„
„
„
„
„
„
400 MHz to 2700 MHz frequency operating range
12 dB small signal gain at 2 GHz
28 dBm output power at 1 dB gain compression
Integrated active biasing
External matching allows broad application optimization of the electrical performance
5 V single supply operation
All pins ESD protected
1.3 Applications
„ Broadband CPE/MoCA
„ WLAN/ISM/RFID
„ Wireless infrastructure (base station,
repeater, backhaul systems)
„ Industrial applications
„ E-metering
„ Satellite Master Antenna TV (SMATV)
1.4 Quick reference data
Table 1.
Quick reference data
Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values
at VCC = 5 V; ICC = 180 mA; Tcase = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
[1]
f
frequency
Gp
power gain
f = 2140 MHz
PL(1dB)
output power at 1 dB gain compression
f = 2140 MHz
IP3O
output third-order intercept point
f = 2140 MHz
[1]
Operation outside this range is possible but not guaranteed.
[2]
PL = 17 dBm per tone; spacing = 1 MHz.
[2]
Min
Typ
Max
Unit
400
-
2700 MHz
10.5 12.0 13.5
dB
26.5 28.0 -
dBm
39.0 42.0 -
dBm
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
2. Pinning information
2.1 Pinning
terminal 1
index area
n.c.
1
VCC(RF)
2
8
ICQ_ADJ
7
RF_IN
6
SHDN
5
VCC(BIAS)
BGA7127
VCC(RF)
3
n.c.
4
GND PAD
001aam036
Transparent top view
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
n.c.
1, 4
not connected
VCC(RF)
2, 3
RF output for the power amplifier and DC supply input for the
RF transistor collector [1]
VCC(BIAS)
5
bias supply voltage [2]
SHDN
6
shutdown control function enabled / disabled
RF_IN
7
RF input for the power amplifier [1]
ICQ_ADJ
8
quiescent collector current adjustment by an external resistor
GND
GND pad
RF ground and DC ground [3]
[1]
This pin is DC-coupled and requires an external DC-blocking capacitor.
[2]
RF decoupled.
[3]
The center metal base of the SOT908-1 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Type number Package
BGA7127
BGA7127
Product data sheet
Name
Description
Version
HVSON8
plastic thermal enhanced very thin small outline
package; no leads; 8 terminals; body 3 × 3 × 0.85 mm
SOT908-1
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
2 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
4. Functional diagram
VCC
SHDN 6
INPUT MATCH
VCC(BIAS)
ICQ_ADJ
5
8
BIAS
ENABLE
BANDGAP
R2
V/I
CONVERTER
R1
2, 3 VCC(RF)
RF_IN 7
RF_OUT
OUTPUT MATCH
GND
014aab047
Fig 2.
Functional diagram
5. Shutdown control
Table 4.
Mode
Shutdown control settings
Mode description
Function description
SHDN
Vctrl(sd) (V)
Ictrl(sd) (μA)
Min
Max
Min
Max
Idle
medium power MMIC fully off;
minimal supply current
shutdown control enabled
0
0
0.7
-
2
TX
medium power MMIC transmit mode shutdown control disabled
1
2.5
VCC(BIAS) -
3
BGA7127
Product data sheet
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Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
3 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
6. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Min
Max
Unit
RF supply voltage
[1]
-
6.0
V
VCC(BIAS)
bias supply voltage
[1]
-
6.0
V
ICC
supply current
[1][2]
-
325
mA
Vctrl(sd)
shutdown control voltage
[3]
0.0
VCC(BIAS) V
Pi(RF)
RF input power
[4]
-
25
dBm
VCC(RF)
Parameter
Conditions
f = 2140 MHz; switched
Tcase
case temperature
−40
+85
°C
Tj
junction temperature
-
150
°C
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
-
2000
V
Charged Device Model (CDM);
According JEDEC standard 22-C101B
-
500
V
[1]
See Figure 3 for safe operating area.
[2]
The supply current is adjustable. See Section 8.1 “Supply current adjustment” and Section 12 “Application information”.
[3]
If Vctrl(sd) exceeds VCC(BIAS), the internal ESD circuit can be damaged.
The recommended preventive measure is to limit the Ictrl(sd) to 20 mA.
If the SHDN function is not used, the SHDN pin should be connected to VCC(BIAS).
[4]
Withstands switching between zero and maximum Pi(RF).
001aal536
350
ICC
(mA)
300
250
200
150
100
2
3
4
5
6
7
VCC(RF) (V)
Exceeding the safe operating area limits may cause serious damage to the product.
The impact on ICC due to the spread of the external ICQ resistor (R2) should be taken into account.
The product-spread on ICC should be taken into account (See Section 8 “Static characteristics”).
Fig 3.
BGA7127
Product data sheet
BGA7127 DC safe operating area
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
4 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
7. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
[1]
Thermal characteristics
Parameter
Conditions
Typ Max Unit
thermal resistance from junction to
mounting base
Tcase = 85 °C; VCC = 5 V;
ICC = 180 mA
[1]
28
-
K/W
Defined as thermal resistance from junction to GND pad.
8. Static characteristics
Table 7.
Static characteristics
Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values
at VCC = 5.0 V; Tcase = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Max
Unit
100
-
250
mA
R1 = 1 Ω; R2 = 909 Ω, E96
[2]
160
180
200
mA
R1 = 1.8 Ω; R2 = 909 Ω, E96
[2]
160
180
200
mA
-
4
6
μA
supply current
ICC
Typ
[1]
during shutdown; pin SHDN = LOW
(shutdown enabled)
[1]
The supply current is adjustable. See Section 8.1 “Supply current adjustment” and Section 12 “Application
information”.
[2]
See Section 12 “Application information”.
8.1 Supply current adjustment
The supply current can be adjusted by changing the value of external ICQ resistor (R2).
001aal537
250
ICC
(mA)
200
150
100
650
850
1050
1250
1450
1650
R2 (Ω)
R1 = 1 Ω.
Fig 4.
BGA7127
Product data sheet
Supply current as a function of the value of R2 at a supply voltage of 5 V.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
9. Dynamic characteristics
Table 8.
Dynamic characteristics
Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V;
ICC = 180 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified.
Symbol
Parameter
f
frequency
Gp
power gain
PL(1dB)
Conditions
output power at 1 dB gain compression
Min
Typ
[1]
400
f = 940 MHz
[2]
-
f = 1960 MHz
[2]
f = 2140 MHz
[2]
f = 2445 MHz
[2]
NF
output third-order intercept point
noise figure
RLout
input return loss
output return loss
MHz
-
dB
-
13.0
-
dB
10.5
12.0
13.5
dB
10.5
-
dB
27.5
-
dBm
f = 1960 MHz
-
28.5
-
dBm
f = 2140 MHz
26.5
28.0
-
dBm
-
27.5
-
dBm
f = 940 MHz
[3]
-
41.5
-
dBm
f = 1960 MHz
[3]
-
42.5
-
dBm
f = 2140 MHz
[3]
39.0
42.0
-
dBm
f = 2445 MHz
[3]
-
41.5
-
dBm
f = 940 MHz
-
3.1
-
dB
f = 1960 MHz
-
4.5
-
dB
f = 2140 MHz
-
4.6
-
dB
-
4.7
-
dB
f = 940 MHz
[2]
-
−25
-
dB
f = 1960 MHz
[2]
-
−9
-
dB
f = 2140 MHz
[2]
-
−9
-
dB
f = 2445 MHz
[2]
-
−11
-
dB
f = 940 MHz
[2]
-
−12
-
dB
f = 1960 MHz
[2]
-
−14
-
dB
f = 2140 MHz
[2]
-
−10
-
dB
f = 2445 MHz
[2]
-
−17
-
dB
Operation outside this range is possible but not guaranteed.
[2]
Defined at Pi = −40 dBm; small signal conditions.
[3]
PL = 17 dBm; tone spacing = 1 MHz.
Product data sheet
2700
20.0
-
[1]
BGA7127
-
-
f = 2445 MHz
RLin
Unit
f = 940 MHz
f = 2445 MHz
IP3O
Max
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Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
6 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
9.1 Scattering parameters
Table 9.
Scattering parameters, MMIC only
VCC = 5 V; ICC = 180 mA; Tcase = 25 °C.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
400
0.92
178
8.64
91
0.01
45
0.75
−173
500
0.91
176
6.95
88
0.01
49
0.76
−175
600
0.91
174
5.88
86
0.01
51
0.75
−176
700
0.91
172
5.05
83
0.02
53
0.75
−178
800
0.91
170
4.47
81
0.02
55
0.74
−180
900
0.91
167
4.01
79
0.02
55
0.74
179
1000
0.90
165
3.64
76
0.02
54
0.75
177
1100
0.90
163
3.30
74
0.02
52
0.76
175
1200
0.90
161
3.0
71
0.02
51
0.75
173
1300
0.91
159
2.75
69
0.03
50
0.76
172
1400
0.91
156
2.53
67
0.03
51
0.76
171
1500
0.92
155
2.33
65
0.03
52
0.77
170
1600
0.92
153
2.16
64
0.03
52
0.77
169
1700
0.92
152
2.01
62
0.03
51
0.78
168
1800
0.92
152
1.86
61
0.03
48
0.78
168
1900
0.93
151
1.75
60
0.03
49
0.79
168
2000
0.93
152
1.64
60
0.03
51
0.80
168
2100
0.93
151
1.56
59
0.04
52
0.80
169
2200
0.93
151
1.48
58
0.04
52
0.80
169
2300
0.92
151
1.43
57
0.04
52
0.80
170
2400
0.92
151
1.38
57
0.04
52
0.79
171
2500
0.90
152
1.33
57
0.04
51
0.80
172
2600
0.90
152
1.29
56
0.04
50
0.79
173
2700
0.89
152
1.27
55
0.05
50
0.78
173
10. Reliability information
Table 10.
Reliability
Life test Conditions
HTOL
Intrinsic failure rate
according to JESD85; confidence level 60 %; Tj = 55 °C;
activation energy = 0.7 eV; acceleration factor determined
according to the Arrhenius equation.
4
11. Moisture sensitivity
Table 11.
BGA7127
Product data sheet
Moisture sensitivity level
Test methodology
Class
JESD-22-A113
1
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Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
7 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
12. Application information
12.1 920 MHz to 960 MHz at 5 V; 180 mA
C6
R1
VCC
C5
C8
C7
L2
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
MSL3
VCC(RF)
RF_IN
C2
MSL4
L1
MSL5
MSL6
C4
50 Ω
MSL8
C3
BGA7127
ICQ_ADJ
MSL7
SHDN
R2
001aam037
enable
See Table 12 for a list of components.
PCB board specification:
Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm.
Fig 5.
920 MHz to 960 MHz application schematic
001aam170
32
PL(1dB)
(dBm)
001aam171
26
Gp
(dB)
30
24
(1)
(2)
(3)
28
22
26
20
24
18
22
0.92
0.93
0.94
0.95
(1)
(2)
(3)
16
0.92
0.96
0.93
f (GHz)
(1) Tcase = 25 °C
(2) Tcase = 85 °C
(2) Tcase = 85 °C
(3) Tcase = −40 °C
(3) Tcase = −40 °C
Output power at 1 dB gain compression as a
function of frequency
BGA7127
Product data sheet
0.95
0.96
f (GHz)
(1) Tcase = 25 °C
Fig 6.
0.94
Fig 7.
Power gain as a function of frequency
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Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
8 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam172
0
RLin, RLout, ISL
(dB)
−5
001aam173
46
IP3O
(dBm)
(1)
(2)
(3)
44
(2)
−10
42
−15
−20
40
(3)
−25
38
−30
(1)
−35
0.92
0.93
0.94
0.95
36
0.92
0.96
0.93
0.94
0.95
f (GHz)
Tcase = 25 °C.
PL = 17 dBm; tone spacing = 1 MHz.
(1) RLin
(1) Tcase = 25 °C
(2) RLout
(2) Tcase = 85 °C
(3) ISL
(3) Tcase = −40 °C
Fig 8.
0.96
f (GHz)
Input return loss, output return loss and
isolation as a function of frequency
001aam523
0
ACPR
(dBc)
−20
Fig 9.
Output third-order intercept point as a function
of frequency
001aam524
0
ACPR
(dBc)
−10
−20
−30
−40
−40
(1)
(2)
(3)
(4)
−60
(1)
(2)
(3)
(4)
−50
−60
−80
0
5
10
15
20
25
PL(AV) (dBm)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 7.5 dB;
5 MHz carrier spacing.
−70
0
5
10
15
20
25
PL(AV) (dBm)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 9 dB;
10 MHz carrier spacing.
(1) f = 920 MHz; ACPR measured at f ± 5 MHz
(1) f = 920 MHz; ACPR measured at f ± 5 MHz
(2) f = 960 MHz; ACPR measured at f ± 5 MHz
(2) f = 960 MHz; ACPR measured at f ± 5 MHz
(3) f = 920 MHz; ACPR measured at f ± 10 MHz
(3) f = 920 MHz; ACPR measured at f ± 10 MHz
(4) f = 960 MHz; ACPR measured at f ± 10 MHz
(4) f = 960 MHz; ACPR measured at f ± 10 MHz
Fig 10. Adjacent channel power ratio as a function of
average output power
BGA7127
Product data sheet
Fig 11. Adjacent channel power ratio as a function of
average output power
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Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
9 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam525
43
IP3o
(dBm)
41
(1)
(2)
39
37
10
14
18
22
PL (dBm) per tone
f = 940 MHz; tone spacing = 1 MHz.
(1) Upper sideband
(2) Lower sideband
Fig 12. Output third-order intercept point as a function of output power per tone
GND
GND
VCC
ena ble
n.c.
GND
J3
C7
R1
C8
J1
J2
C10
C5 MSL6 MSL7
L1
MSL1
C1
L2
MSL3
MSL2
C4
MSL8
C3
C2
MSL4 MSL5
RF in
RF out
R2
001aam038
See Table 12 for a list of components.
Fig 13. 920 MHz to 960 MHz application reference board
BGA7127
Product data sheet
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Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
10 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 12. 920 MHz to 960 MHz list of components
See Figure 5 and Figure 13 for component layout.
Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm.
Component Description
Value
Function
Remarks
C1, C4
capacitor
68 pF
DC blocking
GRM1885C1H680JA01D
C2
capacitor
9.1 pF
input match
Murata GRM1885C1H9R1CZ01D
C3
capacitor
5.1 pF
output match
Murata GRM1885C1H5R1CZ01D
C5
capacitor
10 nF
RF decoupling
Murata GRM1885C1H1R0CZ01D
C6
capacitor
1 μF
LF decoupling
AVX 06033D105KAT2A
C7
capacitor
10 μF
LF decoupling
AVX 1206ZG106ZAT2A
C8
capacitor
12 pF
noise decoupling Murata GRM1555C1H120JZ01D
J1, J2
RF connector
SMA
J3
DC connector 6 pins
L1
inductor
2.2 nH
output match
Tyco Electronics 36501J2N2JTDG
L2
inductor
22 nH
DC Feed
Tyco Electronics 36501J022JTDG
PCB
RO4003C stack
Emerson Network Power 142-0701-841
MOLEX
KOVO
MSL1
micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match
Width (W) × Spacing (S) × Length (L)
MSL2
micro stripline 1.14 mm × 0.8 mm × 6.8 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL3
micro stripline 1.14 mm × 0.8 mm × 4.4 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL4
micro stripline 1.14 mm × 0.8 mm × 2.0 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL5
micro stripline 1.14 mm × 0.8 mm × 3.2 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL6
micro stripline 1.14 mm × 0.8 mm × 4.2 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL7
micro stripline 1.14 mm × 0.8 mm × 1.8 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL8
micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match
R1
resistor
1.8 Ω
R2
resistor
2 kΩ trimmer
BGA7127
Product data sheet
Width (W) × Spacing (S) × Length (L)
Yageo RC0603FR-071R8L
bias adjustment
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Rev. 3 — 3 December 2010
Bourns 3214W-1-202E
© NXP B.V. 2010. All rights reserved.
11 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
12.2 1930 MHz to 1990 MHz at 5 V; 180 mA
C6
R1
VCC
C5
C7
L1
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
VCC(RF)
RF_IN
C2
MSL3
MSL5
MSL4
MSL6
50 Ω
C3
BGA7127
ICQ_ADJ
C4
SHDN
R2
001aam177
enable
See Table 13 for a list of components.
PCB board specification:
Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm.
Fig 14. 1930 MHz to 1990 MHz application schematic
001aam117
32
PL(1dB)
(dBm)
Gp
(dB)
(1)
(2)
(3)
30
16
28
14
26
12
24
10
22
1.93
001aam118
18
1.95
1.97
1.99
8
1.93
(1)
(2)
(3)
1.95
f (GHz)
(1) Tcase = 25 °C
(2) Tcase = 85 °C
(2) Tcase = 85 °C
(3) Tcase = −40 °C
(3) Tcase = −40 °C
Fig 15. Output power at 1 dB gain compression as a
function of frequency
Product data sheet
1.99
f (GHz)
(1) Tcase = 25 °C
BGA7127
1.97
Fig 16. Power gain as a function of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
12 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam119
0
001aam120
46
IP3O
(dBm)
RLin, RLout, ISL
(dB)
44
(3)
(1)
−10
(1)
42
(2)
(2)
40
(3)
−20
38
−30
1.93
1.95
1.97
36
1.93
1.99
1.95
1.97
f (GHz)
1.99
f (GHz)
Tcase = 25 °C.
PL = 17 dBm; tone spacing = 1 MHz.
(1) RLin
(1) Tcase = 25 °C
(2) RLout
(2) Tcase = 85 °C
(3) ISL
(3) Tcase = −40 °C
Fig 17. Input return loss, output return loss and
isolation as a function of frequency
Fig 18. Output third-order intercept point as a function
of frequency
GND
GND
VCC
enable
n.c.
GND
J3
C7
R1
C6
J1
J2
C5 MSL4 MSL5
L1
MSL1
C1
MSL2
MSL3
C2
C4
MSL6
C3
RF in
RF out
R2
001aam039
See Table 13 for a list of components.
Fig 19. 1930 MHz to 1990 MHz application reference board
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
13 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 13. 1930 MHz to 1990 MHz list of components
See Figure 14 and Figure 19 for component layout.
Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm.
Component Description
Value
Function
Remarks
C1,C4
capacitor
15 pF
DC blocking
GRM1885C1H150JA01D
C2
capacitor
2.7 pF
input match
Murata, GRM1885C1H2R7CZ01D
C3
capacitor
1.8 pF
output match
Murata, GRM1885C1H1R8CZ01D
C5
capacitor
15 pF
RF decoupling
Murata, GRM1885C1H150JA01D
C6
capacitor
100 nF
LF decoupling
AVX, 0603YC104KAT2A
C7
capacitor
10 μF
LF decoupling
AVX, 1206ZG106ZAT2A
J1,J2
RF connector
SMA
J3
DC connector 6 pins
L1
inductor
MSL1
Emerson Network Power, 142-0701-841
MOLEX
22 nH
DC Feed
Tyco Electronics, 36501J022JTDG
micro stripline 1.14 mm × 0.8 mm × 10.95 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL2
micro stripline 1.14 mm × 0.8 mm × 11.4 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL3
micro stripline 1.14 mm × 0.8 mm × 5.9 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL4
micro stripline 1.14 mm × 0.8 mm × 1.4 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL5
micro stripline 1.14 mm × 0.8 mm × 4.6 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL6
micro stripline 1.14 mm × 0.8 mm × 10.95 mm
output match
Width (W) × Spacing (S) × Length (L)
R1
resistor
1Ω
R2
resistor
2 kΩ trimmer
Yageo, RC0603FR-071RL
bias adjustment Bourns, 3214W-1-202E
12.3 2110 MHz to 2170 MHz at 5 V; 180 mA
C6
R1
VCC
C5
C7
L1
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
C2
MSL4
VCC(RF) MSL3
RF_IN
BGA7127
ICQ_ADJ
C4
MSL5
50 Ω
C3
SHDN
R2
enable
001aam040
See Table 14 for a list of components.
PCB board specification:
Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm.
Fig 20. 2110 MHz to 2170 MHz application schematic
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
14 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam121
32
PL(1dB)
(dBm)
001aam122
18
Gp
(dB)
30
16
(1)
(2)
(3)
28
14
(1)
(2)
(3)
26
12
24
10
22
2.11
2.13
2.15
2.17
8
2.11
2.13
2.15
f (GHz)
(1) Tcase = 25 °C
(1) Tcase = 25 °C
(2) Tcase = 85 °C
(2) Tcase = 85 °C
(3) Tcase = −40 °C
(3) Tcase = −40 °C
Fig 21. Output power at 1 dB gain compression as a
function of frequency
001aam123
0
2.17
f (GHz)
Fig 22. Power gain as a function of frequency
001aam124
46
IP3O
(dBm)
RLin, RLout, ISL
(dB)
44
(2)
−10
(3)
(1)
(1)
42
(2)
40
(3)
−20
38
−30
2.11
2.13
2.15
2.17
36
2.11
2.13
f (GHz)
Tcase = 25 °C.
PL = 17 dBm; tone spacing = 1 MHz.
(1) Tcase = 25 °C
(2) RLout
(2) Tcase = 85 °C
(3) ISL
(3) Tcase = −40 °C
Fig 23. Input return loss, output return loss and
isolation as a function of frequency
Product data sheet
2.17
f (GHz)
(1) RLin
BGA7127
2.15
Fig 24. Output third-order intercept point as a function
of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
15 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam526
0
001aam527
0
ACPR
(dBc)
−10
ACPR
(dBc)
−20
−20
−30
−40
(1)
(2)
(3)
(4)
−40
(1)
(2)
(3)
(4)
−50
−60
−60
−80
0
5
10
15
−70
20
25
PL(AV) (dBm)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 7.5 dB;
5 MHz carrier spacing.
0
5
10
15
20
25
PL(AV) (dBm)
2-carrier W-CDMA; each carrier according to 3GPP test
model 1; 64 DPCH; PAR for composite signal = 9 dB;
10 MHz carrier spacing.
(1) f = 2110 MHz; ACPR measured at f ± 5 MHz
(1) f = 2110 MHz; ACPR measured at f ± 5 MHz
(2) f = 2170 MHz; ACPR measured at f ± 5 MHz
(2) f = 2170 MHz; ACPR measured at f ± 5 MHz
(3) f = 2110 MHz; ACPR measured at f ± 10 MHz
(3) f = 2110 MHz; ACPR measured at f ± 10 MHz
(4) f = 2170 MHz; ACPR measured at f ± 10 MHz
(4) f = 2170 MHz; ACPR measured at f ± 10 MHz
Fig 25. Adjacent channel power ratio as a function of
average output power
Fig 26. Adjacent channel power ratio as a function of
average output power
001aam528
43
IP3o
(dBm)
(1)
41
(2)
39
37
10
14
18
22
PL (dBm) per tone
f = 2140 MHz; tone spacing = 1 MHz.
(1) Upper sideband
(2) Lower sideband
Fig 27. Output third-order intercept point as a function of output power per tone
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
16 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
GND
GND
VCC
enable
n.c.
GND
J3
C7
R1
C6
J1
J2
C5
MSL4
L1
MSL1
C1
MSL2
MSL3
C2
C4
MSL5
C3
RF in
RF out
R2
001aam041
See Table 14 for a list of components.
Fig 28. 2110 MHz to 2170 MHz application reference board
Table 14. 2110 MHz to 2170 MHz list of components
See Figure 20 and Figure 28 for component layout.
Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm.
Component Description
Value
Function
Remarks
C1,C4
capacitor
15 pF
DC blocking
Murata, GRM1885C1H150JA01D
C2
capacitor
2.4 pF
input match
Murata, GRM1885C1H2R4CZ01D
C3
capacitor
1.5 pF
output match
Murata, GRM1885C1H1R5CZ01D
C5
capacitor
15 pF
RF decoupling
Murata, GRM1885C1H150JA01D
C6
capacitor
100 nF
LF decoupling
AVX, 0603YC104KAT2A
C7
capacitor
10 μF
LF decoupling
J1,J2
RF connector
SMA
J3
DC connector 6 pins
L1
inductor
MSL1
MSL2
AVX, 1206ZG106ZAT2A
Emerson Network Power, 142-0701-841
MOLEX
DC Feed
Tyco Electronics, 36501J022JTDG
micro stripline 1.14 mm × 0.8 mm × 10.95 mm
input match
Width (W) × Spacing (S) × Length (L)
micro stripline 1.14 mm × 0.8 mm × 11.2 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL3
micro stripline 1.14 mm × 0.8 mm × 5.9 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL4
micro stripline 1.14 mm × 0.8 mm × 6.0 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL5
micro stripline 1.14 mm × 0.8 mm × 10.95 mm
output match
Width (W) × Spacing (S) × Length (L)
R1
resistor
1Ω
R2
resistor
2 kΩ trimmer
BGA7127
Product data sheet
22 nH
Yageo, RC0603FR-071RL
bias adjustment Bourns, 3214W-1-202E
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
17 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
12.4 2405 MHz to 2485 MHz at 5 V; 180 mA
C6
R1
VCC
C5
C7
L2
VCC(BIAS)
50 Ω
MSL1
C1
MSL2
L1
MSL3
C2
MSL4
VCC(RF)
RF_IN
MSL5
MSL6
50 Ω
C3
BGA7127
ICQ_ADJ
C4
SHDN
R2
enable
001aam042
See Table 15 for a list of components.
PCB board specification:
Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm.
Fig 29. 2405 MHz to 2485 MHz application schematic
001aam125
32
PL(1dB)
(dBm)
001aam126
18
Gp
(dB)
30
16
(1)
(2)
(3)
28
14
26
12
24
10
22
2.405
2.425
2.445
2.465
2.485
f (GHz)
8
2.405
(1)
(2)
(3)
2.425
(1) Tcase = 25 °C
(1) Tcase = 25 °C
(2) Tcase = 85 °C
(2) Tcase = 85 °C
(3) Tcase = −40 °C
(3) Tcase = −40 °C
Fig 30. Output power at 1 dB gain compression as a
function of frequency
BGA7127
Product data sheet
2.445
2.465
2.485
f (GHz)
Fig 31. Power gain as a function of frequency
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
18 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
001aam127
0
001aam128
46
IP3O
(dBm)
RLin, RLout, ISL
(dB)
44
−10
(1)
(2)
(3)
(1)
42
(2)
(3)
40
−20
38
−30
2.405
2.425
2.445
36
2.405
2.465
2.485
f (GHz)
Tcase = 25 °C.
2.425
2.445
2.465
2.485
f (GHz)
PL = 17 dBm; tone spacing = 1 MHz.
(1) RLin
(1) Tcase = 25 °C
(2) RLout
(2) Tcase = 85 °C
(3) ISL
(3) Tcase = −40 °C
Fig 32. Input return loss, output return loss and
isolation as a function of frequency
Fig 33. Output third-order intercept point as a function
of frequency
GND
GND
VCC
enable
n.c.
GND
J3
C7
R1
C6
J1
J2
MSL3
C5
MSL5
L2
C1
MSL1
L1
MSL2
MSL4
C2
C4
MSL6
C3
RF in
RF out
R2
001aam043
See Table 15 for a list of components.
Fig 34. 2405 MHz to 2485 MHz application reference board
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
19 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Table 15. 2405 MHz to 2485 MHz list of components
See Figure 29 and Figure 34 for component layout.
Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm.
Component Description
Value
Function
Remarks
C1,C4
capacitor
15 pF
DC blocking
GRM1885C1H150JA01D
C2
capacitor
1.5 pF
input match
Murata, GRM1885C1H1R5CZ01D
C3
capacitor
1.5 pF
output match
Murata, GRM1885C1H1R5CZ01D
C5
capacitor
15 pF
RF decoupling
Murata, GRM1885C1H150JA01D
C6
capacitor
100 nF
LF decoupling
AVX, 0603YC104KAT2A
C7
capacitor
10 μF
LF decoupling
AVX, 1206ZG106ZAT2A
L1
inductor
3.3 nH
input match
Tyco Electronics, 36501J3N3JTDG
L2
inductor
22 nH
DC Feed
Tyco Electronics, 36501J022JTDG
MSL1
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL2
micro stripline
1.14 mm × 0.8 mm × 8.6 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL3
micro stripline
1.14 mm × 0.8 mm × 2.8 mm
input match
Width (W) × Spacing (S) × Length (L)
MSL4
micro stripline
1.14 mm × 0.8 mm × 6.0 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL5
micro stripline
1.14 mm × 0.8 mm × 5.9 mm
output match
Width (W) × Spacing (S) × Length (L)
MSL6
micro stripline
1.14 mm × 0.8 mm × 10.95 mm
output match
Width (W) × Spacing (S) × Length (L)
R1
resistor
1Ω
R2
resistor
2 kΩ trimmer
Yageo, RC0603FR-071RL
bias adjustment
Bourns, 3214W-1-202E
12.5 PCB stack
through via
35 μm (1 oz.) copper + 0.3 μm
gold plating
RF and analog routing
RO4003C, 0.51 mm (20 mil)
35 μm (1 oz.) copper
RF and analog ground
(1) 0.2 mm (8 mil)
35 μm (1 oz.) copper
analog routing
FR4, 0.15 mm (6 mil)
35 μm (1 oz.) copper
RF and analog ground
014aab087
Dielectric constant for RO4003C; εr = 3.38
Fig 35. PCB stack
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
20 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
13. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3 x 3 x 0.85 mm
SOT908-1
0
1
2 mm
scale
X
B
D
A
E
A
A1
c
detail X
terminal 1
index area
e1
terminal 1
index area
e
v
w
b
1
4
M
M
C
C A B
C
y1 C
y
L
exposed tie bar (4×)
Eh
exposed tie bar (4×)
8
5
Dh
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max.
A1
b
c
D(1)
Dh
E(1)
Eh
e
e1
L
v
w
y
y1
mm
1
0.05
0.00
0.3
0.2
0.2
3.1
2.9
2.25
1.95
3.1
2.9
1.65
1.35
0.5
1.5
0.5
0.3
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
OUTLINE
VERSION
SOT908-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-09-26
05-10-05
MO-229
Fig 36. Package outline SOT908-1 (HVSON8)
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
21 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
14. Abbreviations
Table 16.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
CPE
Customer-Premises Equipment
DC
Direct Current
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
HTOL
High Temperature Operating Life
ISM
Industrial, Scientific and Medical
MMIC
Monolithic Microwave Integrated Circuit
MoCA
Multimedia over Coax Alliance
RFID
Radio Frequency IDentification
SMA
SubMiniature version A
TX
Transmit
W-CDMA
Wideband Code Division Multiple Access
WLAN
Wireless Local Area Network
15. Revision history
Table 17.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA7127 v.3
20101203
Product data sheet
-
BGA7127 v.2
Modifications:
•
•
•
•
•
Figure 10 on page 9: Figure has been changed
Figure 11 on page 9: Figure has been changed
Figure 25 on page 16: Figure has been changed
Figure 26 on page 16: Figure has been changed
Some page- layout enhancements have been made
BGA7127 v.2
20100913
Product data sheet
-
BGA7127 v.1
BGA7127 v.1
20100726
Product data sheet
-
-
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
22 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
23 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 December 2010
© NXP B.V. 2010. All rights reserved.
24 of 25
BGA7127
NXP Semiconductors
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
18. Contents
1
1.1
1.2
1.3
1.4
2
2.1
2.2
3
4
5
6
7
8
8.1
9
9.1
10
11
12
12.1
12.2
12.3
12.4
12.5
13
14
15
16
16.1
16.2
16.3
16.4
17
18
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Supply current adjustment . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Scattering parameters . . . . . . . . . . . . . . . . . . . 7
Reliability information . . . . . . . . . . . . . . . . . . . . 7
Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . . 8
920 MHz to 960 MHz at 5 V; 180 mA . . . . . . . . 8
1930 MHz to 1990 MHz at 5 V; 180 mA . . . . . 12
2110 MHz to 2170 MHz at 5 V; 180 mA . . . . . 14
2405 MHz to 2485 MHz at 5 V; 180 mA . . . . . 18
PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 22
Legal information. . . . . . . . . . . . . . . . . . . . . . . 23
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Contact information. . . . . . . . . . . . . . . . . . . . . 24
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 December 2010
Document identifier: BGA7127
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