Data Sheet

21
BGA6130
+9
6
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
Rev. 2 — 12 February 2014
Product data sheet
1. General description
The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount
package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with
efficiency higher than 55 %. Its power saving features include simple quiescent current
adjustment, which allows class-AB operation and logic-level shutdown control to reduce
the supply current to 4 A.
2. Features and benefits







400 MHz to 2700 MHz frequency operating range
Integrated active biasing
External matching allows broad application optimization of the electrical performance
Efficiencies higher than 55 %
3.6 V single supply operation
Power-down
Excellent robustness:
 All pins ESD protected (HBM 6 kV; CDM 2 kV)
 Withstands mismatch of VSWR 50 : 1 through all phases
 Withstands electrical over-stress peaks of 4.5 V on the supply voltage
3. Applications
In this data sheet two Industrial, Scientific and Medical (ISM) applications are described,
namely ISM at 434 MHz and ISM at 915 MHz. The BGA6130 is also suited for a range of
other applications:
 Broadband CPE / MoCA
 WLAN / ISM / RFID
 Wireless Sensor Network (WSN)
 Industrial applications
 Satellite Master Antenna TV (SMATV)
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
4. Quick reference data
Table 1.
Quick reference data
3.3 V  VSUP  3.9 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 3900  (tolerance 10 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max
Unit
VSUP
supply voltage
[1]
3.3
3.6
3.9
V
ICC(tot)
total supply current
[2]
50
70
90
mA
1 k  R3  5 k
[2]
30
-
250
mA
1 k  R3  5 k; pin ENABLE = LOW
[2]
-
4
6
A
[3]
40 +25
+85
C
400 -
2700 MHz
433 434
435
MHz
Tcase
case temperature
f
frequency
Measured at ISM-434 MHz (see Section 14)
f
frequency
Gp
power gain
433 MHz  f  435 MHz
14
17
20
dB
PL(1dB)
output power at 1 dB gain compression
433 MHz  f  435 MHz
25
28
-
dBm
PL(3dB)
output power at 3 dB gain compression
433 MHz  f  435 MHz
-
29.5 -
dBm

efficiency
433 MHz  f  435 MHz; at PL(3dB)
-
56
-
%
902 915
928
MHz
Measured at ISM-915 MHz (see Section 14)
f
frequency
Gp
power gain
902 MHz  f  928 MHz
11
14
17
dB
PL(1dB)
output power at 1 dB gain compression
902 MHz  f  928 MHz
26
29
-
dBm
PL(3dB)
output power at 3 dB gain compression
902 MHz  f  928 MHz
-
30
-
dBm

efficiency
902 MHz  f  928 MHz; at PL(3dB)
-
60
-
%
[1]
Supply voltage on pins RF_OUT and VCC.
[2]
Current through pins RF_OUT and VCC.
[3]
Tcase is the temperature at the soldering point of the exposed die pad.
5. Design support
Table 2.
Available design support
Download from the BGA6130 product page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS planned
[1]
Based on Mextram device model.
Device models for AWR Microwave Office
no
[1]
Based on Mextram device model.
Device models for ANSYS Ansoft designer no
[1]
Based on Mextram device model.
SPICE model
planned
[1]
Based on Gummel-Poon device model.
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes
See Section 6 and Section 14.
Gerber files
yes
Gerber files of boards provided with the customer evaluation kit.
Solder pattern
yes
[1]
See http://www.nxp.com/models.html.
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
2 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BGA6130
HVSON8
plastic thermal enhanced very thin small outline package; no leads; SOT908-3
8 terminals; body 3  3  0.85 mm
OM7828/BGA6130/KIT
-
Customer evaluation kit for BGA6130 [1]
[1]
Version
-
The customer evaluation kit contains the following:
a) Fully populated and matched RF evaluation board for ISM 434
b) Fully populated and matched RF evaluation board for ISM 915
c) Unpopulated Printed-Circuit Board (PCB)
d) Two SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
e) BGA6130 samples
7. Functional diagram
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Fig 1.
BGA6130
Product data sheet
Functional diagram
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
3 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
8. Pinning information
8.1 Pinning
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Fig 2.
Pin configuration
8.2 Pin description
Table 4.
Pin description
Symbol
Pin
Description
n.c.
1, 4
not connected [1]
RF_OUT
2, 3
RF output and supply to the amplifier [2]
VCC
5
bias supply voltage [3]
ENABLE
6
enable
RF_IN
7
RF input [2]
ICQ_ADJ
8
quiescent collector current adjustment by an external resistor
GND
exposed die pad
ground [4]
[1]
This pin can be connected to ground.
[2]
This pin requires an external DC-blocking capacitor.
[3]
RF decoupled.
[4]
The exposed die pad of the SOT908-3 also functions as heatsink for the power amplifier.
9. Functional description
9.1 Supply current adjustment
The supply current can be adjusted by changing the value of biasing resistor R3 which
connects pin ICQ_ADJ (pin 8) to ground (see Figure 1).
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
4 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
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VSUP = 3.6 V; Tamb = 25 C.
Fig 3.
Supply current ICC(tot) as function of biasing resistor R3; typical values
9.2 Enable control
The BGA6130 can be powered down using enable pin 6 (ENABLE). In case this control
function is not needed the enable pin can be connected to the bias supply voltage pin 5
(VCC). The current through the enable pin 6 should never exceed 20 mA as this might
damage the ESD protection circuitry. This can be avoided either by preventing the voltage
on this pin to exceed the supply voltage (VSUP) or by adding a series resistor.
Table 5.
Enable truth table
See Table 8.
Logic level on pin ENABLE (pin 6)
BGA6130
Product data sheet
Status BGA6130
LOW
powered down
HIGH
powered on
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
5 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
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VSUP = 3.6 V; Tamb = 25 C.
Fig 4.
Total supply current as function of voltage on pin ENABLE; typical values
10. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VSUP
Parameter
Conditions
[1]
supply voltage
Min
Max
Unit
0.2
+4.5
V
VI(dig)
digital input voltage
[2][4]
II(dig)
digital input current
[3][4]
ICC(tot)
total supply current
Pi(RF)
RF input power
-
15
dBm
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
-
6
kV
Charged Device Model (CDM);
According JEDEC standard 22-C101B
-
2
kV
0
VSUP + 0.3
V
20
+20
mA
-
350
mA
f = 434 MHz; switched
-
15
dBm
f = 915 MHz; switched
[1]
Absolute maximum DC voltage on pins RF_OUT, ICQ_ADJ and VCC.
[2]
Absolute maximum DC voltage on pin ENABLE.
[3]
Absolute maximum DC current through pin ENABLE.
[4]
If VI(dig) exceeds VSUP the internal ESD protection circuit can be damaged (see Figure 5). The pin ENABLE can be connected to VCC in
case the enable control function is not used (see Section 9.2).
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
6 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
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VSUP = 3.6 V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
Fig 5.
Current through pin ENABLE as a function of voltage on pin ENABLE at a supply
voltage VSUP of 3.6 V; typical values
11. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-case)
thermal resistance from junction to case
Tcase < 85 C
6
K/W
12. Static characteristics
Table 8.
Static characteristics
3.3 V  VSUP  3.9 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 3900  (tolerance 10 %); input
and output impedances matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise
specified.
Symbol
Parameter
Min
Typ
Max
Unit
VSUP
supply voltage
[1]
3.3
3.6
3.9
V
ICC(tot)
total supply current
[2]
55
70
85
mA
1 k  R3  5 k
[2]
30
-
250
mA
1 k  R3  5 k;
pin ENABLE = LOW
[2]
-
4
6
A
[3]
40
+25
+85
C
Tcase
BGA6130
Product data sheet
Conditions
case temperature
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Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
7 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
Table 8.
Static characteristics …continued
3.3 V  VSUP  3.9 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 3900  (tolerance 10 %); input
and output impedances matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise
specified.
Symbol
Parameter
Conditions
Min
ICC
supply current
on pin RF_OUT
on pin VCC
VIH
Max
Unit
-
63
-
mA
-
7
-
mA
-
-
3
A
LOW-level input voltage
[4]
0
-
0.7
V
HIGH-level input voltage
[4]
2.5
-
VSUP
V
on pin ENABLE
VIL
Typ
[1]
Supply voltage on pins RF_OUT and VCC.
[2]
Current through pins RF_OUT and VCC.
[3]
Tcase is the temperature at the soldering point of the exposed die pad.
[4]
On digital input pin ENABLE.
13. Dynamic characteristics
Table 9.
Dynamic characteristics
3.3 V  VSUP  3.9 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 3900  (tolerance 10 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
f
Conditions
frequency
Min Typ
Max Unit
400 -
2700 MHz
433 434
435
Measured at ISM-434 MHz (see Section 14)
f
frequency
Gp
power gain
MHz
433 MHz  f  435 MHz
14
17
20
dB
433 MHz  f  435 MHz; pin ENABLE = LOW
-
17
-
dB
PL(1dB)
output power at 1 dB gain compression 433 MHz  f  435 MHz
25
28
-
dBm
PL(3dB)
output power at 3 dB gain compression 433 MHz  f  435 MHz
-
29.5
-
dBm
IMD3
third-order intermodulation distortion
433 MHz  f  435 MHz;
PL = 15 dBm per tone; tone spacing = 1 MHz
-
34
-
dBc
NF
noise figure
433 MHz  f  435 MHz
-
4.5
-
dB
RLin
input return loss
433 MHz  f  435 MHz
8
10
-
dB
433 MHz  f  435 MHz; pin ENABLE = LOW
-
4.5
-
dB
RLout
output return loss
433 MHz  f  435 MHz
6
8
-
dB
433 MHz  f  435 MHz; pin ENABLE = LOW
-
0.5
-
dB
ISL
isolation
433 MHz  f  435 MHz
-
28
-
dB
433 MHz  f  435 MHz; pin ENABLE = LOW
-
17
-
dB

efficiency
433 MHz  f  435 MHz; at PL(3dB)
-
56
-
%
td(pu)
power-up delay time
after pin ENABLE is switched to logic HIGH;
to within 0.1 dB of final gain state.
-
2.2
-
s
td(pd)
power-down delay time
after pin ENABLE is switched to logic LOW;
to within 0.1 dB of final gain state.
-
0.5
-
s
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
8 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
Table 9.
Dynamic characteristics …continued
3.3 V  VSUP  3.9 V; 40 C  Tcase  +85 C; Pi < 20 dBm; R3 = 3900  (tolerance 10 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Measured at ISM-915 MHz (see Section 14)
f
frequency
Gp
power gain
PL(1dB)
902 915
928
MHz
902 MHz  f  928 MHz
11
14
17
dB
902 MHz  f  928 MHz; pin ENABLE = LOW
-
16.5 -
dB
26
29
dBm
output power at 1 dB gain compression 902 MHz  f  928 MHz
-
PL(3dB)
output power at 3 dB gain compression 902 MHz  f  928 MHz
-
30
-
dBm
IMD3
third-order intermodulation distortion
902 MHz  f  928 MHz;
PL = 15 dBm per tone; tone spacing = 1 MHz
-
34
-
dBc
NF
noise figure
902 MHz  f  928 MHz
-
4
-
dB
RLin
input return loss
902 MHz  f  928 MHz
8
10
-
dB
902 MHz  f  928 MHz; pin ENABLE = LOW
-
2.5
-
dB
902 MHz  f  928 MHz
6
8
-
dB
902 MHz  f  928 MHz; pin ENABLE = LOW
-
0.5
-
dB
RLout
ISL
output return loss
isolation
902 MHz  f  928 MHz
-
28
-
dB
902 MHz  f  928 MHz; pin ENABLE = LOW
-
16.5 -
dB

efficiency
902 MHz  f  928 MHz; at PL(3dB)
-
60
-
%
td(pu)
power-up delay time
after pin ENABLE is switched to logic HIGH;
to within 0.1 dB of final gain state.
-
2.5
-
s
td(pd)
power-down delay time
after pin ENABLE is switched to logic LOW;
to within 0.1 dB of final gain state.
-
0.5
-
s
14. Application information
The BGA6130 can be used for a wide variety of applications. This section describes two
example applications in the Industrial, Scientific and Medical (ISM) frequency bands at
434 MHz and at 915 MHz. The ISM-434 band is used in region 1, Europe, Africa, the
Middle East west of the Persian Gulf including Iraq, the former Soviet Union and
Mongolia, whereas the ISM-915 band is used in region 2, Americas, Greenland and some
of the eastern Pacific Islands. Example ISM applications are Wireless Sensor Networks
(WSN), ZigBee and WLAN.
14.1 Application board
Customer evaluation boards are available from NXP (see Section 6 “Ordering
information”). The BGA6130 shall be decoupled and matched as depicted in Figure 6. The
ground leads and exposed paddle should be connected directly to the ground plane.
Enough via holes should be provided to connect top and bottom ground planes in the final
application board. Sufficient cooling should be provided preventing the temperature of the
exposed die pad from exceeding 85 C.
The ISM-434 and ISM-915 application boards have the same input and output matching
topology, but differ in component values. Resistor R3 is used to set the bias current. Note
resistor R2 which can be used to limit the current through the ESD protection circuit in
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
9 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
case the voltage on pin ENABLE exceeds the supply voltage on pin VCC. L3, C8, C9 and
C10 are used to feed a DC current to the RF transistor. The other passive components are
used for input and an output matching.
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See Table 10 for list of components.
Fig 6.
Application diagram of customer evaluation board for ISM-434 and ISM-915 application
The Printed-Circuit Board (PCB) is a four metal layer substrate board as described in
Figure 7. The width and the gap between the strip-line and ground plane are configured
such that a 50 ohm transmission line is obtained.
WKURXJKYLD
5)DQGDQDORJURXWLQJ
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Fig 7.
BGA6130
Product data sheet
Printed-Circuit Board (PCB) stack build
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
10 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
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Fig 8.
Top view of populated ISM-434 Printed-Circuit Board (PCB)
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Fig 9.
Top view of populated ISM-915 Printed-Circuit Board (PCB)
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
11 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
Table 10. List of components
See Figure 6 for schematics.
Component
Description
ISM-434
ISM-915
C1
capacitor
1 nF
1 nF
Murata GRM series
C2
capacitor
15 pF
10 pF
Murata GRM series
C3
capacitor
15 pF
12 pF
Murata GRM series
Product data sheet
Remarks
C4
capacitor
2 pF
2.7 pF
Murata GRM series
C5
capacitor
15 pF
5.6 pF
Murata GRM series
C6
capacitor
1 nF
1 nF
Murata GRM series
C7
capacitor
1 nF
1 nF
Murata GRM series
C8
capacitor
100 nF
100 nF
Murata GRM series
C9
capacitor
10 F
10 F
Murata GRM series
IC1
BGA6130
-
-
NXP
MSL1
micro stripline
5.9 mm
5.9 mm
[1]
MSL2
micro stripline
3.1 mm
1.8 mm
[1]
MSL3
micro stripline
-
1.7 mm
[1]
MSL4
micro stripline
1.7 mm
1.8 mm
[1]
MSL5
micro stripline
3.1 mm
3.2 mm
[1]
MSL6
micro stripline
1.7 mm
1.5 mm
[1]
MSL7
micro stripline
6.8 mm
6.8 mm
[1]
R1
resistor
220 
220 
R2
resistor
270 
270 
R3
resistor
3900 
3900 
L1
inductor
15 nH
1.5 nH
Murata LQW series
L2
inductor
5.6 nH
1.5 nH
Murata LQW series
L3
RF choke
68 nH
27 nH
Murata LQW series
X1, X2
SMA connector
-
-
[1]
BGA6130
Value
Length (L) is specified, width (W) = 1.6 mm and spacing (S) = 0.8 mm.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
12 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
14.2 Characteristics ISM-434
DDD
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VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
_V_
G%
_V_
G%
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 12. Input return loss as a function of frequency for
ISM-434 application; typical values
Product data sheet
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
(1) Tamb = 40 C
BGA6130
DDD
I*+]
Fig 11. Isolation as a function of frequency for
ISM-434 application; typical values
DDD
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
(1) Tamb = 40 C
Fig 10. Power gain as a function of frequency for
ISM-434 application; typical values
Fig 13. Output return loss as a function of frequency
for ISM-434 application; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
13 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
DDD
,0'
G%F
DDD
,0'
G%F
I0+]
(1) Tamb = 40 C
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
DDD
,0'
G%F
I0+]
Fig 15. Third order intermodulation distortion as a
function of frequency for ISM-434 application;
different supply voltages; typical values
DDD
,0'
G%F
Tamb = 25 C; ICC(tot) = 70 mA; PL = 15 dBm per tone;
f = 1 MHz; matched for ISM-434.
VSUP = 3.6 V; ICC(tot) = 70 mA; PL = 15 dBm per tone;
f = 1 MHz; matched for ISM-434.
Fig 14. Third order intermodulation distortion as a
function of frequency for ISM-434 application;
different temperatures; typical values
3/G%PSHUWRQH
VSUP = 3.6 V; ICC(tot) = 70 mA; f = 1 MHz; matched for
ISM-434.
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
BGA6130
Product data sheet
3/G%PSHUWRQH
Tamb = 25 C; ICC(tot) = 70 mA; f = 1 MHz; matched for
ISM-434.
(1) Tamb = 40 C
Fig 16. Third order intermodulation distortion as a
function of output power for ISM-434
application; different temperatures;
typical values
Fig 17. Third order intermodulation distortion as a
function of output power for ISM-434
application; different supply voltages;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
14 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
DDD
3/G%
G%
DDD
3/G%
G%
I0+]
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
I0+]
Fig 19. Output power at 1 dB gain compression as a
function of frequency for ISM-434 application;
different supply voltages; typical values
DDD
Ș
Tamb = 25 C; ICC(tot) = 70 mA; matched for ISM-434.
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
(1) Tamb = 40 C
Fig 18. Output power at 1 dB gain compression as a
function of frequency for ISM-434 application;
different temperatures; typical values
DDD
Ș
3/G%P
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
BGA6130
Product data sheet
3/G%P
Tamb = 25 C; ICC(tot) = 70 mA; matched for ISM-434.
(1) Tamb = 40 C
Fig 20. Efficiency as a function of output power for
ISM-434 application; different temperatures;
typical values
Fig 21. Efficiency as a function of output power for
ISM-434 application; different supply voltages;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
15 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
DDD
DDD
1)
G%
1)
G%
I*+]
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
DDD
9,5)287
P9
I*+]
Tamb = 25 C; ICC(tot) = 70 mA; matched for ISM-434.
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
(1) Tamb = 40 C
Fig 22. Noise figure as a function of frequency for
ISM-434 application; different temperatures;
typical values
Fig 23. Noise figure as a function of frequency for
ISM-434 application; different supply voltages;
typical values
DDD
9,5)287
P9
9,GLJ
9
9,5)287
9,GLJ
WȝV
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
Fig 24. Power-on delay time; typical values
BGA6130
Product data sheet
9,GLJ
9
9,GLJ
9,5)287
WȝV
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-434.
Fig 25. Power-down delay time; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
16 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
DDD
*S,6/
G%
DDD
_V
_V__V_
G%
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; pin ENABLE = LOW;
matched for ISM-434.
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; pin ENABLE = LOW;
matched for ISM-434.
(1) Gp
(1) s112
(2) ISL
(2) s222
Fig 26. Isolation in power-down mode; typical values
Fig 27. Return loss in power-down mode; typical
values
14.3 Characteristics ISM-915
DDD
*S
G%
DDD
,6/
G%
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
BGA6130
Product data sheet
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
(1) Tamb = 40 C
Fig 28. Power gain as a function of frequency for
ISM-915 application; typical values
Fig 29. Isolation as a function of frequency for
ISM-915 application; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
17 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
_V_
G%
DDD
_V_
G%
DDD
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
DDD
,0'
G%F
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
(1) Tamb = 40 C
Fig 30. Input return loss as a function of frequency for
ISM-915 application; typical values
Fig 31. Output return loss as a function of frequency
for ISM-915 application; typical values
DDD
,0'
G%F
I0+]
VSUP = 3.6 V; ICC(tot) = 70 mA; PL = 15 dBm per tone;
f = 1 MHz; matched for ISM-915.
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
BGA6130
Product data sheet
I0+]
Tamb = 25 C; ICC(tot) = 70 mA; PL = 15 dBm per tone;
f = 1 MHz; matched for ISM-915.
(1) Tamb = 40 C
Fig 32. Third order intermodulation distortion as a
function of frequency for ISM-915 application;
different temperatures; typical values
Fig 33. Third order intermodulation distortion as a
function of frequency for ISM-915 application;
different supply voltages; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
18 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
DDD
,0'
G%F
DDD
,0'
G%F
3/G%PSHUWRQH
VSUP = 3.6 V; ICC(tot) = 70 mA; f = 1 MHz; matched for
ISM-915.
(1) Tamb = 40 C
(1) VSUP = 3.3 V
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
DDD
3/G%
G%
Fig 35. Third order intermodulation distortion as a
function of output power for ISM-915
application; different supply voltages;
typical values
DDD
3/G%
G%
Tamb = 25 C; ICC(tot) = 70 mA; f = 1 MHz; matched for
ISM-915.
(2) Tamb = +25 C
Fig 34. Third order intermodulation distortion as a
function of output power for ISM-915
application; different temperatures;
typical values
3/G%PSHUWRQH
I0+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
BGA6130
Product data sheet
I0+]
Tamb = 25 C; ICC(tot) = 70 mA; matched for ISM-915.
(1) Tamb = 40 C
Fig 36. Output power at 1 dB gain compression as a
function of frequency for ISM-915 application;
different temperatures; typical values
Fig 37. Output power at 1 dB gain compression as a
function of frequency for ISM-915 application;
different supply voltages; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
19 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
DDD
Ș
DDD
Ș
3/G%P
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
3/G%P
Fig 39. Efficiency as a function of output power for
ISM-915 application; different supply voltages;
typical values
DDD
1)
G%
Tamb = 25 C; ICC(tot) = 70 mA; matched for ISM-915.
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
(1) Tamb = 40 C
Fig 38. Efficiency as a function of output power for
ISM-915 application; different temperatures;
typical values
DDD
1)
G%
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
(1) VSUP = 3.3 V
(2) Tamb = +25 C
(2) VSUP = 3.6 V
(3) Tamb = +85 C
(3) VSUP = 3.9 V
BGA6130
Product data sheet
I*+]
Tamb = 25 C; ICC(tot) = 70 mA; matched for ISM-915.
(1) Tamb = 40 C
Fig 40. Noise figure as a function of frequency for
ISM-915 application; different temperatures;
typical values
Fig 41. Noise figure as a function of frequency for
ISM-915 application; different supply voltages;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
20 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
DDD
9,5)287
P9
DDD
9,5)287
P9
9,GLJ
9
9,GLJ
9,5)287
WȝV
9,GLJ
9
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
Fig 42. Power-on delay time; typical values
WȝV
VSUP = 3.6 V; ICC(tot) = 70 mA; matched for ISM-915.
Fig 43. Power-down delay time; typical values
DDD
*S,6/
G%
9,GLJ 9,5)287
DDD
_V
_V__V_
G%
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; pin ENABLE = LOW;
matched for ISM-915.
(1) s112
(2) ISL
(2) s222
BGA6130
Product data sheet
I*+]
VSUP = 3.6 V; ICC(tot) = 70 mA; pin ENABLE = LOW;
matched for ISM-915.
(1) Gp
Fig 44. Isolation in power-down mode; typical values
Fig 45. Return loss in power-down mode; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
21 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
15. Package outline
+9621SODVWLFWKHUPDOHQKDQFHGYHU\WKLQVPDOORXWOLQHSDFNDJHQROHDGV
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Fig 46. Package outline SOT908-3 (HVSON8)
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
22 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
16. Soldering
)RRWSULQWLQIRUPDWLRQIRUUHIORZVROGHULQJRI+9621SDFNDJH
627
*[
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&
Q63[
+\
63\
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63[
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VROGHUSDVWHGHSRVLW
VROGHUODQGSOXVVROGHUSDVWH
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6/[
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63[
63\
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Q63[
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VRWBIU
Fig 47. Reflow soldering footprint
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
23 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
17. Abbreviations
Table 11.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CPE
Customer-Premises Equipment
ESD
ElectroStatic Discharge
HBM
Human Body Model
MMIC
Monolithic Microwave Integrated Circuit
MoCA
Multimedia over Coax Alliance
RFID
Radio Frequency IDentification
SMA
Sub-Miniature version A
VSWR
Voltage Standing-Wave Ratio
WLAN
Wireless Local Area Network
18. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA6130 v.2
20140212
Product data sheet
-
BGA6130 v.1
-
-
Modifications
BGA6130 v.1
BGA6130
Product data sheet
•
•
Figure 6 on page 10: figure updated
Table 10 on page 12: table updated
20121009
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
24 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGA6130
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
25 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGA6130
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 February 2014
© NXP B.V. 2014. All rights reserved.
26 of 27
BGA6130
NXP Semiconductors
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
21. Contents
1
2
3
4
5
6
7
8
8.1
8.2
9
9.1
9.2
10
11
12
13
14
14.1
14.2
14.3
15
16
17
18
19
19.1
19.2
19.3
19.4
20
21
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Design support . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 4
Supply current adjustment . . . . . . . . . . . . . . . . 4
Enable control. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal characteristics . . . . . . . . . . . . . . . . . . 7
Static characteristics. . . . . . . . . . . . . . . . . . . . . 7
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Application information. . . . . . . . . . . . . . . . . . . 9
Application board . . . . . . . . . . . . . . . . . . . . . . . 9
Characteristics ISM-434 . . . . . . . . . . . . . . . . . 13
Characteristics ISM-915 . . . . . . . . . . . . . . . . . 17
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24
Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Contact information. . . . . . . . . . . . . . . . . . . . . 26
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 February 2014
Document identifier: BGA6130
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