Data Sheet

HV
QF
N3
2
BGA7210
700 MHz to 3800 MHz high linearity variable gain amplifier
Rev. 4 — 28 January 2013
Product data sheet
1. Product profile
1.1 General description
The BGA7210 MMIC is an extremely linear Variable Gain Amplifier (VGA), operating from
0.7 GHz to 3.8 GHz. The maximum gain is 30 dB. It has an attenuation range of 31.5 dB.
At its minimum attenuation setting it has a maximum output power of 21 dBm, an IP3O of
39 dBm and a noise figure of 6.5 dB.
The current consumption can be optimized per attenuation setting allowing for optimized
overall system performance. The current consumption and attenuation level are controlled
through a Serial Peripheral Interface (SPI). The current can be reduced to 120 mA.
Optimal linearity performance is obtained at 185 mA. The BGA7210 has a fast switching
power-down pin to further reduce current consumption during idle time.
The BGA7210 has been designed and qualified for the severe mission profile of cellular
base stations, but its outstanding RF performance and interfacing flexibility make it
suitable for a wide variety of applications.
The BGA7210 is housed in a 32 pins 5 mm  5 mm leadless HVQFN32 package.
1.2 Features and benefits










Operating frequency range from 0.7 GHz to 3.8 GHz
High gain of 30 dB
High IP3O of 39 dBm
Attenuation range of 31.5 dB with 0.5 dB step (6 bit)
Maximum output power of 21 dBm
Noise figure of 6.5 dB at maximum gain
ESD protection on all pins (HBM 4 kV; CDM 2 kV)
Fast switching power-save mode
Moisture sensitivity level 1
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications




IF and RF applications
WiMAX and cellular base stations
Cable modem termination systems
Temperature compensation circuits
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
1.4 Quick reference data
Table 1.
Quick reference data
4.75 V  VSUP  5.25 V; 40 C  Tamb  +85 C; maximum current; input and output is terminated with 50 ;
unless otherwise specified.
Symbol Parameter
VSUP
supply voltage
ICC(tot)
total supply current
Conditions
4.75 5.0
5.25 V
160
195
230
mA
-
185
-
mA
minimum current
-
120
-
mA
power-down current
-
15
-
mA
40
+25 +85 C
26
30
maximum current
optimized current
Tamb
ambient temperature
Gp
power gain
Min Typ Max Unit
[1]
[2]
minimum attenuation
700 MHz  f  1400 MHz
range
NF
attenuation range
noise figure
33
dB
1400 MHz  f  1700 MHz
26
29.5 33
dB
1700 MHz  f  2200 MHz
26
29
33
dB
2200 MHz  f  2800 MHz
25
28
31
dB
3400 MHz  f  3800 MHz
22
26
30
dB
700 MHz  f  2200 MHz
28
31.5 35
dB
2200 MHz  f  2800 MHz
27
30.5 34
dB
3400 MHz  f  3800 MHz
26
29.5 33
dB
minimum attenuation
700 MHz  f  2200 MHz
-
6.5
8.5
dB
2200 MHz  f  2800 MHz
-
7
9
dB
3400 MHz  f  3800 MHz
-
8
10
dB
maximum attenuation
700 MHz  f  2200 MHz
-
27.5 30.5 dB
2200 MHz  f  2800 MHz
-
28
31
dB
-
28.5 32
dB
3400 MHz  f  3800 MHz
IP3O
output third-order intercept point
minimum attenuation
[3]
700 MHz  f  1400 MHz
34
39
-
dBm
1400 MHz  f  1700 MHz
32
37
-
dBm
1700 MHz  f  2200 MHz
30
35
-
dBm
28
34
-
dBm
2200 MHz  f  2800 MHz
2200 MHz  f  2800 MHz; Csh = 0.68 pF
[4]
30
35
-
dBm
24
30
-
dBm
700 MHz  f  1400 MHz
-
35
-
dBm
1400 MHz  f  1700 MHz
-
33
-
dBm
1700 MHz  f  2200 MHz
-
31
-
dBm
-
30
-
dBm
-
30
-
dBm
-
25
-
dBm
3400 MHz  f  3800 MHz
maximum attenuation
[3]
2200 MHz  f  2800 MHz
2200 MHz  f  2800 MHz; Csh = 0.68 pF
3400 MHz  f  3800 MHz
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
[4]
© NXP B.V. 2013. All rights reserved.
2 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
Table 1.
Quick reference data …continued
4.75 V  VSUP  5.25 V; 40 C  Tamb  +85 C; maximum current; input and output is terminated with 50 ;
unless otherwise specified.
Symbol Parameter
PL(1dB)
Conditions
Min Typ Max Unit
output power at 1 dB gain compression minimum attenuation
700 MHz  f  2800 MHz
2200 MHz  f  2800 MHz; Csh = 0.68 pF
[4]
3400 MHz  f  3800 MHz
[1]
18
21
-
dBm
20
23
-
dBm
16
19
-
dBm
Supply voltage on pins RF_OUT, VCC2, VDDA, VCC1 and VDDD.
[2]
See Section 9.2.
[3]
Pi = 23 dBm per tone; f = 10 MHz.
[4]
See Section 11.
2. Pinning information
25 GND
26 GND
27 GND
28 GND
29 RF_IN
30 n.c.
terminal 1
index area
31 GND
32 GND
2.1 Pinning
GND
1
24 PUPMXG/PWRDN
GND
2
23 CLK
GND
3
22 SER_IN
GND
4
GND
5
GND
6
19 VDDD
GND
7
18 GND
GND
8
17 VCC1
21 SS
VDDA 16
20 SER_OUT
VCC2 15
GND 14
GND 13
RF_OUT 12
n.c. 11
9
GND
GND 10
BGA7210
aaa-000658
Transparent top view
Transparent top view
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
BGA7210
Product data sheet
Pin description
Symbol
Pin
Description
GND
1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13,
14, 18, 25, 26, 27, 28, 31, 32
Ground
n.c.
11, 30
not connected
RF_OUT
12
RF output and supply to amplifier 2
VCC2
15
Supply voltage to amplifier 2
VDDA
16
Analog supply voltage to DSA
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
3 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
Table 2.
Pin description …continued
Symbol
Pin
Description
VCC1
17
Supply voltage to amplifier 1
VDDD
19
Digital supply voltage to digital controller
SER_OUT
20
SPI data output
SS
21
SPI slave select (0 = select; 1 = deselect)
SER_IN
22
SPI data input
CLK
23
SPI clock input
PUPMXG/PWRDN
24
Power-up gain attenuation / power down
RF_IN
29
RF input
3. Ordering information
Table 3.
Ordering information
Type number Package
BGA7210
Name
Description
Version
HVQFN32
plastic thermal enhanced very thin quad flat package;
no leads; 32 terminals; body 5  5  0.85 mm
SOT617-3
4. Marking
Table 4.
Marking
Type number
Marking code
BGA7210
7210
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VSUP
supply voltage
[1]
0.6 +8
V
VI
input voltage
[2]
0.6 +8
V
output voltage
[3]
0.6 +8
V
II
input current
[4]
20
+20
mA
IO
output current
[5]
20
+20
mA
PRFIN
power on pin RF_IN
-
30
dBm
Tstg
storage temperature
65
+150 C
Tj
junction temperature
VESD
electrostatic
discharge voltage
VO
-
150
C
Human Body Model (HBM); According
to JEDEC standard 22-A114E
-
4
kV
Charged Device Model (CDM); According
to JEDEC standard 22-C101B
-
2
kV
[1]
Absolute maximum DC voltage on pins RF_OUT, VCC2, VDDA, VCC1, VDDD and RF_IN.
[2]
Absolute maximum DC voltage on pins SS, SER_IN, CLK and PUPMXG/PWRDN.
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
4 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
[3]
Absolute maximum DC voltage on pin SER_OUT.
[4]
Absolute maximum DC current through pins SS, SER_IN, CLK and PUPMXG/PWRDN.
[5]
Absolute maximum DC current through pin SER_OUT.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-sp)
thermal resistance from junction to solder point
Tsp  85 C
[1]
[1]
Typ
Unit
16
K/W
Tsp is the temperature at the solder point.
7. Static characteristics
Table 7.
Symbol
Static characteristics
Parameter
Conditions
VSUP
supply voltage
ICC(tot)
total supply current
maximum
4.75 5.0
5.25
Unit
V
195 230
mA
-
185 -
mA
minimum current
-
120 -
mA
power-down current
-
15
mA
40
+25 +85
C
[2]
-
Tamb
ambient temperature
ICC
supply current
on pin RF_OUT
-
85
-
mA
supply current
on pin VCC2
-
45
-
mA
supply current
on pin VDDA
-
5
-
mA
supply current
on pin VCC1
-
55
-
mA
supply current
on pin VDDD
-
5
-
mA
+0.8
V
VIL
LOW-level input voltage
[3]
0.1 0
2
VIH
HIGH-level input voltage
[3]
VSUP + 0.1
V
VOL
LOW-level output voltage
[4]
0.1 0
+0.8
V
VOH
HIGH-level output voltage
[4]
2.5
3.3
3.4
V
LOW-level output current
[4]
15
-
0
mA
HIGH-level output current
[4]
0
-
15
mA
IOL
IOH
Product data sheet
Typ Max
160
optimized current
BGA7210
Min
[1]
[1]
Supply voltage on pins RF_OUT, VCC2, VDDA, VCC1 and VDDD.
[2]
See Section 9.2.
[3]
Digital input pins are: SS, SER_IN, CLK and PUPMXG/PWRDN.
[4]
Digital output pin is: SER_OUT.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
3.3
© NXP B.V. 2013. All rights reserved.
5 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
8. Dynamic characteristics
Table 8.
Dynamic characteristics
4.75 V  VSUP  5.25 V; 40 C  Tamb  +85 C; maximum current; input and output terminated with 50 ,
unless otherwise specified.
Symbol
Parameter
Conditions
Gp
power gain
minimum attenuation
G/T
Min
Typ
Max
Unit
700 MHz  f  1400 MHz
26
30
33
dB
1400 MHz  f  1700 MHz
26
29.5
33
dB
1700 MHz  f  2200 MHz
26
29
33
dB
2200 MHz  f  2800 MHz
25
28
31
dB
3400 MHz  f  3800 MHz
22
26
30
dB
0.03
0.006 0
dB/C
0.2
-
+0.2
dB/V
700 MHz  f  2200 MHz
28
31.5
35
dB
2200 MHz  f  2800 MHz
27
30.5
34
dB
gain variation with
temperature
G/VSUP gain variation with
supply voltage
range
step
attenuation range
attenuation step
3400 MHz  f  3800 MHz
26
29.5
33
dB
700 MHz  f  2800 MHz
0
0.5
1
dB
3400 MHz  f  3800 MHz
Gp
0
0.5
1.2
dB
power gain variation 700 MHz  f  3800 MHz
[1]
1.5
-
+1.5
dB
700 MHz  f  2200 MHz
[2]
(0.5 +
0.025  i)
+(0.5 +
dB
0.025  i)
2200 MHz  f  2800 MHz
[2]
(0.3 +
0.025  i)
+(0.3 +
dB
0.025  i)
3400 MHz  f  3800 MHz
[2]
(0.5 +
0.025  i)
+(0.5 +
dB
0.025  i)
Gp(flat)
power gain flatness
700 MHz  f  3800 MHz; per 200 MHz
-
-
1
dB
RLin
input return loss
700 MHz  f  3800 MHz
10
-
-
dB
RLout
output return loss
700 MHz  f  3800 MHz
7
-
-
dB
2200 MHz  f  2800 MHz; Csh = 0.68 pF
10
-
-
dB
700 MHz  f  2200 MHz
-
6.5
8.5
dB
2200 MHz  f  2800 MHz
-
7
9
dB
3400 MHz  f  3800 MHz
-
8
10
dB
700 MHz  f  2200 MHz
-
27.5
30.5
dB
2200 MHz  f  2800 MHz
-
28
31
dB
3400 MHz  f  3800 MHz
-
28.5
32
dB
NF
noise figure
minimum attenuation
maximum attenuation
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
6 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
Table 8.
Dynamic characteristics …continued
4.75 V  VSUP  5.25 V; 40 C  Tamb  +85 C; maximum current; input and output terminated with 50 ,
unless otherwise specified.
Symbol
IP3O
Parameter
output third-order
intercept point
Conditions
Min
Typ
Max
Unit
700 MHz  f  1400 MHz
34
39
-
dBm
1400 MHz  f  1700 MHz
32
37
-
dBm
1700 MHz  f  2200 MHz
30
35
-
dBm
28
33
-
dBm
30
35
-
dBm
24
27
-
dBm
700 MHz  f  1400 MHz
-
35
-
dBm
1400 MHz  f  1700 MHz
-
33
-
dBm
1700 MHz  f  2200 MHz
-
31
-
dBm
-
30
-
dBm
-
30
-
dBm
-
25
-
dBm
18
21
-
dBm
20
23
-
dBm
16
19
-
dBm
minimum attenuation
[3]
2200 MHz  f  2800 MHz
2200 MHz  f  2800 MHz; Csh = 0.68 pF
[4]
3400 MHz  f  3800 MHz
maximum attenuation
[3]
2200 MHz  f  2800 MHz
2200 MHz  f  2800 MHz; Csh = 0.68 pF
[4]
3400 MHz  f  3800 MHz
PL(1dB)
output power at
1 dB
gain compression
minimum attenuation
700 MHz  f  2800 MHz
2200 MHz  f  2800 MHz; Csh = 0.68 pF
[4]
3400 MHz  f  3800 MHz
maximum attenuation
700 MHz  f  2800 MHz
2200 MHz  f  2800 MHz; Csh = 0.68 pF
-
20
-
dBm
[4]
-
20
-
dBm
3400 MHz  f  3800 MHz
-
16
-
dBm
td(pd)
power-down delay
time
[5]
-
100
-
ns
td(pu)
power-up delay time
[5]
-
5
-
s
attenuation
response time
[5][
-
100
-
ns
tresp()
6]
[1]
Normalized to maximum gain and attenuation.
[2]
i specifies the decimal attenuation step, ranging from 0 to 63.
[3]
Pi = 23 dBm per tone; f = 10 MHz.
[4]
See Section 11.
[5]
To within 0.1 dB of final gain state.
[6]
After last SPI bit is clocked in.
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
7 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
9. Serial Peripheral Interface
9.1 Command word format
The Serial Peripheral Interface (SPI) operates in mode 0. This means that when the SPI is
inactive the clock pin is logically LOW. When the SPI interface is active the data is clocked
in at the rising edge of the clock pulse; data is clocked out at the negative edge. The
control word length is 12 bits (see Figure 2), however the word length can be extended
appropriately with trailing zeros (see Figure 3).
CLK
SS
SERIN
C1
C0
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
SEROUT
C1
C0
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
OLD CURRENT AND ATTENUATION STATE
NEW STATE
aaa-000659
Fig 2.
Timing diagram for 12-bit word
CLK
SS
SERIN
C1
C0
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
SEROUT
C1
C0
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
OLD CURRENT AND ATTENUATION STATE
NEW STATE
aaa-000660
Fig 3.
Timing diagram for 12-bit word length followed by four ignored trailing bits
The word written on the input (SER_IN) will be replicated on the output (SER_OUT)
9.2 Setting current and attenuation
The current and attenuation are set by bits D9 to D0 and are preceded by the command
bits C0 and C1, which are always set to logic LOW, see Figure 4. If all bits are set to logic
LOW (0x000) then current is at maximum and attenuation is at minimum; if all bits are set
to logic HIGH (0x3FF) then current is at minimum and attenuation is at maximum.
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
8 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
CLK
SERIN/OUT
SET
Fig 4.
C1
C0
D9
D8
D7
D6
D5
D4
D3
D2
D1
00
00 ... 11
00 ... 11
000000 ... 111111
command
Iamp1
Iamp2
attenuation
D0
aaa-000661
Command to set current of the first amplifier (D9, D8); second amplifier (D7, D6) and
attenuation (D5, ... , D2)
Depending on the attenuation setting the current through the first amplifier and the second
amplifier can be optimized, without compromising on linearity. At attenuations less than
9 dB the current in the first amplifier can be reduced with 10 mA; at attenuations equal or
larger than 9 dB the current in the second amplifier can be reduced by 15 mA.
Table 9.
D9, D8
Current reduction (mA)
0x0
0
0x1
10
0x2
20
0x3
30
Table 10.
Product data sheet
Current second amplifier truth table
D7, D6
Current reduction (mA)
0x0
0
0x1
15
0x2
30
0x3
45
Table 11.
BGA7210
Current first amplifier truth table
Attenuation truth table; major states only
D5, D4, D3, D2, D1, D0
Attenuation (dB)
0x00
0
0x01
0.5
0x02
1
0x04
2
0x08
4
0x10
8
0x20
16
0x3F
31.5
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
9 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
9.3 SPI timing
CLK
SERIN/OUT
C1
C0
tsu
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
th
SS
tsu(SS)
Fig 5.
th(SS)
aaa-000662
Timing diagram
Table 12. SPI timing
4.75 V  VSUP  5.25 V; 40 C  Tamb  +85 C unless otherwise specified.
Symbol
Parameter
fSPI
Conditions
Min
Typ
Max
Unit
SPI frequency
0.1
-
20
MHz
tsu
set-up time
10
-
-
ns
th
hold time
10
-
-
ns
tsu(SS)
set-up time on pin SS
10
-
-
ns
th(SS)
hold time on pin SS
10 + 11 / fSPI
-
-
ns
10. Power-up and power save
The PUPMXG/PWRDN pin determines the attenuation and currents at start-up of the chip
(see Table 13). After start-up it can be used to power-down the device.
PUPMXG/
PWRDN
POR
STATE
UNDEFINED
PUPMXG = 1
ON
OFF
ON
OFF
ON
UNDEFINED
PUPMXG = 0
OFF
ON
OFF
ON
OFF
PUPMXG/
PWRDN
POR
STATE
aaa-000664
Fig 6.
PUPMXG/PWRDN
Table 13.
Power-up truth table
PUPMXG/PWRDN
BGA7210
Product data sheet
Current
Attenuation
(mA)
(dB)
0
120
31.5
1
195
0
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
10 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
11. Application information
11.1 Application board
A customer application board is available from NXP upon request. It includes USB
interface circuitry and customer software to facilitate evaluation of the BGA7210.
The final application shall be terminated with 50  and decoupled as depicted in Figure 7.
The ground leads and exposed paddle should be connected directly to the ground plane.
A sufficient number of via holes should be provided to connect the top and bottom ground
planes in the final application board. Sufficient cooling should be provided that the
temperature of the exposed die pad does not exceed 85 C.
VSUP
C23
L1
C22
C26
C12
C25
PUPMXG/
VDDD VCC1
CLK SERIN SS SEROUT
PWRDN
24
23
22
21 20
19
17
VDDA
16
C14
C24
C18
15
VCC2
C17
L2
C1
RF_IN 29
12 RF_OUT
C27
RF_OUT
Csh
aaa-000665
See Table 14 for list of components.
Fig 7.
Schematic representation of the customer evaluation board
Table 14. List of components
See Figure 7 for schematics.
Component
Description
Value
Remarks
C1, C27
DC blocking capacitor
100 pF
Murata GRM
C12
decoupling capacitor
100 nF
close to pin 19
C14
decoupling capacitor
100 nF
close to pin 17
C17
decoupling capacitor
100 nF
close to pin 15
C18
decoupling capacitor
100 nF
close to pin 16
C22
optional decoupling capacitor
10 F
part of optional ripple filter
C23
optional decoupling capacitor
10 F
part of optional ripple filter
C24
decoupling capacitor
100 pF
C25
decoupling capacitor
100 nF
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
11 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
Table 14. List of components …continued
See Figure 7 for schematics.
Component
Description
Value
Remarks
C26
decoupling capacitor
4.7 F
Csh
optional matching capacitor to improve
linearity at 2.2 GHz to 2.8 GHz
0.68 pF
Murata GRM; shall be located 5.5 mm from pin
RF-OUT when using FR4 PCB described below.
L1
optional inductor
820 nH
part of optional ripple filter
L2
inductor
22 nH
Murata LQW 18
The recommended FR4 PCB layer stack is described in Figure 8. A 50  coplanar
grounded wave guide can be implemented by a 0.48 mm RF track and a clearance
between the track and the ground planes of 1 mm on both sides.
through via
RF and analog routing
0.28 mm FR4
RF and analog ground
0.30 mm core
analog routing
0.28 mm FR4
RF and analog ground
aaa-000666
r = 4.5; interconnect 35 m copper.
Fig 8.
BGA7210
Product data sheet
Printed-Circuit Board (PCB) layer stack
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
12 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
11.2 Characteristics
aaa-000667
34
S21
(dB)
aaa-000668
34
S21
(dB)
30
30
(1)
(2)
(3)
26
(1)
(2)
(3)
26
22
22
0
1
2
3
4
5
0
1
f (GHz)
VSUP = 5 V; maximum current setting.
5
f (GHz)
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Maximum power gain as a function of
frequency; typical values
Product data sheet
4
(1) Tamb = 40 C
(2) Tamb = +25 C
BGA7210
3
VSUP = 5 V; maximum current setting and shunt
capacitor (Csh).
(1) Tamb = 40 C
Fig 9.
2
Fig 10. Maximum power gain with shunt capacitor as a
function of frequency; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
13 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000669
35
(1)
(2)
(3)
(4)
(5)
(6)
(7)
S21
(dB)
25
aaa-000670
40
∆Gp
(dB)
30
15
(1)
(2)
(3)
20
5
-5
10
0
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 25 C; maximum current setting.
0
1
2
3
4
5
f (GHz)
VSUP = 5 V; maximum current setting.
(1) f = 0.7 GHz
(1) Tamb = 40 C
(2) f = 1.4 GHz
(2) Tamb = +25 C
(3) f = 1.7 GHz
(3) Tamb = +85 C
(4) f = 2.2 GHz
(5) f = 2.8 GHz
(6) f = 2.8 GHz and Csh used
(7) f = 3.8 GHz
Fig 11. Power gain as a function of attenuation state;
typical values
BGA7210
Product data sheet
Fig 12. Power gain range as a function of frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
14 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000671
0.0
gain step size
(dB)
aaa-000672
2
gain accuracy
(dB)
i )
5x α
.02
0
.5 +
-0.2
+(0
1
(8)
(6)
(4)
(3)
(2)
-0.4
0
-0.6
(1)
(2)
(3)
(4)
(5)
(6)
(7)
-0.8
-1
-(0.
5+
0.0
25
(1)
(5)
(7)
xi
α)
-2
-1.0
0
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 25 C; maximum current setting.
0
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 25 C; maximum current setting.
(1) f = 0.7 GHz
(1) f = 0.7 GHz; range = 31.5 dB
(2) f = 1.4 GHz
(2) f = 1.4 GHz; range = 31.5 dB
(3) f = 1.7 GHz
(3) f = 1.7 GHz; range = 31.5 dB
(4) f = 2.2 GHz
(4) f = 2.2 GHz; range = 31.5 dB
(5) f = 2.8 GHz
(5) f = 2.2 GHz; range = 30.5 dB
(6) f = 2.8 GHz and Csh used
(6) f = 2.8 GHz; range = 30.5 dB
(7) f = 3.8 GHz
(7) f = 2.8 GHz; range = 29.5 dB
(8) f = 3.8 GHz; range = 29.5 dB
Fig 13. Gain step size as a function of attenuation
state; typical values
BGA7210
Product data sheet
Fig 14. Power gain accuracy as a function of
attenuation state; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
15 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000673
-5
S11
(dB)
aaa-000674
-5
S22
(dB)
-15
-15
(1)
(2)
(3)
-25
-25
(1)
(2)
(3)
-35
-35
0
1
2
3
4
5
0
1
2
3
4
f (GHz)
VSUP = 5 V; maximum current setting;
minimum attenuation.
VSUP = 5 V; maximum current setting;
minimum attenuation.
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = +25 C
(2) Tamb = +25 C
(3) Tamb = +85 C
(3) Tamb = +85 C
Fig 15. Input return loss as a function of frequency;
typical values
BGA7210
Product data sheet
5
f (GHz)
Fig 16. Output return loss as a function of frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
16 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000675
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
S11
(dB)
-10
-20
aaa-000676
0
S22
(dB)
-10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
-20
-30
-30
-40
-40
-50
-50
0
1
2
3
4
5
0
1
2
3
f (GHz)
VSUP = 5 V; Tamb = 25 C; maximum current setting.
VSUP = 5 V; Tamb = 25 C; maximum current setting.
(1) attenuation = 0x00 (minimum)
(2) attenuation = 0x01
(2) attenuation = 0x01
(3) attenuation = 0x02
(3) attenuation = 0x02
(4) attenuation = 0x04
(4) attenuation = 0x04
(5) attenuation = 0x08
(5) attenuation = 0x08
(6) attenuation = 0x10
(6) attenuation = 0x10
(7) attenuation = 0x20
(7) attenuation = 0x20
(8) attenuation = 0x3F (maximum)
(8) attenuation = 0x3F (maximum)
BGA7210
Product data sheet
5
f (GHz)
(1) attenuation = 0x00 (minimum)
Fig 17. Input return loss as a function of frequency;
typical values
4
Fig 18. Output return loss as a function of frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
17 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000677
0
S11
(dB)
aaa-000678
0
S22
(dB)
-10
-10
-20
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
-20
-30
-30
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
-40
-40
-50
-50
0
1
2
3
4
5
0
1
2
3
f (GHz)
VSUP = 5 V; Tamb = 25 C; maximum current setting and
shunt capacitor (Csh).
VSUP = 5 V; Tamb = 25 C; maximum current setting and
shunt capacitor (Csh).
(1) attenuation = 0x00 (minimum)
(2) attenuation = 0x01
(2) attenuation = 0x01
(3) attenuation = 0x02
(3) attenuation = 0x02
(4) attenuation = 0x04
(4) attenuation = 0x04
(5) attenuation = 0x08
(5) attenuation = 0x08
(6) attenuation = 0x10
(6) attenuation = 0x10
(7) attenuation = 0x20
(7) attenuation = 0x20
(8) attenuation = 0x3F (maximum)
(8) attenuation = 0x3F (maximum)
BGA7210
Product data sheet
5
f (GHz)
(1) attenuation = 0x00 (minimum)
Fig 19. Input return loss with shunt capacitor as a
function of frequency; typical values
4
Fig 20. Output return loss with shunt capacitor as a
function of frequency; typical values
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Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
18 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000679
45
IP3o
(dBm)
aaa-000680
45
IP3o
(dBm)
35
35
(1)
(2)
(3)
(4)
(5)
(6)
(7)
25
(1)
(2)
(3)
(4)
(5)
(6)
(7)
25
15
15
0
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 40 C; maximum current setting.
0
16
32
VSUP = 5 V; Tamb = 25 C; maximum current setting.
(1) f = 0.7 GHz
(1) f = 0.7 GHz
(2) f = 1.4 GHz
(2) f = 1.4 GHz
(3) f = 1.7 GHz
(3) f = 1.7 GHz
(4) f = 2.2 GHz
(4) f = 2.2 GHz
(5) f = 2.8 GHz
(5) f = 2.8 GHz
(6) f = 2.8 GHz and Csh used
(6) f = 2.8 GHz and Csh used
(7) f = 3.8 GHz
(7) f = 3.8 GHz
Fig 21. Output third-order intercept point as a function
of attenuation state; typical values
BGA7210
Product data sheet
48
64
attenuation (decimal)
Fig 22. Output third-order intercept point as a function
of attenuation state; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
19 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000682
45
IP3o
(dBm)
aaa-000683
45
IP3o
(dBm)
35
(1)
(2)
(3)
(4)
(5)
(6)
(7)
35
(1)
(2)
(3)
(4)
(5)
(6)
(7)
25
25
15
15
0
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 85 C; maximum current setting.
0
16
32
VSUP = 5 V; Tamb = 25 C; minimal current setting.
(1) f = 0.7 GHz
(1) f = 0.7 GHz
(2) f = 1.4 GHz
(2) f = 1.4 GHz
(3) f = 1.7 GHz
(3) f = 1.7 GHz
(4) f = 2.2 GHz
(4) f = 2.2 GHz
(5) f = 2.8 GHz
(5) f = 2.8 GHz
(6) f = 2.8 GHz and Csh used
(6) f = 2.8 GHz and Csh used
(7) f = 3.8 GHz
(7) f = 3.8 GHz
Fig 23. Output third-order intercept point as a function
of attenuation state; typical values
BGA7210
Product data sheet
48
64
attenuation (decimal)
Fig 24. Output third-order intercept point as a function
of attenuation state; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
20 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000685
45
IP3o
(dBm)
aaa-000687
45
IP3o
(dBm)
35
35
(1)
(2)
(3)
(4)
(5)
(6)
(7)
25
15
-30
(1)
(2)
(3)
(6)
(4)
(5)
(7)
25
-20
-10
0
relative current through first amplifier (mA)
VSUP = 5 V; Tamb = 25 C; maximum gain;
maximum current through second amplifier.
15
-50
-40
-30
-20
-10
0
relative current through second amplifier (mA)
VSUP = 5 V; Tamb = 25 C; maximum gain;
maximum current through first amplifier.
(1) f = 0.7 GHz
(1) f = 0.7 GHz
(2) f = 1.4 GHz
(2) f = 1.4 GHz
(3) f = 1.7 GHz
(3) f = 1.7 GHz
(4) f = 2.2 GHz
(4) f = 2.2 GHz
(5) f = 2.8 GHz
(5) f = 2.8 GHz
(6) f = 2.8 GHz and Csh used
(6) f = 2.8 GHz and Csh used
(7) f = 3.8 GHz
(7) f = 3.8 GHz
Fig 25. Output third-order intercept point as a function
of relative current through first amplifier;
typical values
BGA7210
Product data sheet
Fig 26. Output third-order intercept point as a function
of relative current through second amplifier;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
21 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000689
45
(1)
(2)
(3)
(4)
(5)
(6)
(7)
IP3o
(dBm)
35
aaa-000690
45
IP3o
(dBm)
(1)
35
(2)
(3)
(6)
(4)
(5)
25
25
(7)
15
-30
-20
-10
0
relative current through first amplifier (mA)
VSUP = 5 V; Tamb = 25 C; minimum gain;
maximum current through second amplifier.
15
-50
-40
-30
-20
-10
0
relative current through second amplifier (mA)
VSUP = 5 V; Tamb = 25 C; minimum gain;
maximum current through first amplifier.
(1) f = 0.7 GHz
(1) f = 0.7 GHz
(2) f = 1.4 GHz
(2) f = 1.4 GHz
(3) f = 1.7 GHz
(3) f = 1.7 GHz
(4) f = 2.2 GHz
(4) f = 2.2 GHz
(5) f = 2.8 GHz
(5) f = 2.8 GHz
(6) f = 2.8 GHz and Csh used
(6) f = 2.8 GHz and Csh used
(7) f = 3.8 GHz
(7) f = 3.8 GHz
Fig 27. Output third-order intercept point as a function
of relative current through first amplifier;
typical values
BGA7210
Product data sheet
Fig 28. Output third-order intercept point as a function
of relative current through second amplifier;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
22 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000692
200
Itot
(mA)
aaa-000693
45
IP3o
(dBm)
190
(1)
(2)
(2)
(3)
35
(1)
(4)
180
25
170
160
15
0
16
32
48
64
attenuation (decimal)
0
VSUP = 5 V; Tamb = 25 C.
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 25 C; f = 2.8 GHz.
(1) IAMP1 / IAMP2 = 0 mA / 15 mA
(1) IAMP1 / IAMP2 = Iopt
(2) IAMP1 / IAMP2 = 10 mA / 0 mA
(2) IAMP1 / IAMP2 = 0 mA / 0 mA
(3) IAMP1 / IAMP2 = 0 mA / 15 mA
(4) IAMP1 / IAMP2 = 10 mA / 0 mA
Fig 29. Total current as a function of attenuation state
optimized for IP3O; typical values
aaa-000694
200
Itot
(mA)
Fig 30. Output third-order intercept point as a function
of attenuation state; typical values
aaa-000695
200
Itot
(mA)
(1)
190
(1)
190
(2)
180
180
(2)
(3)
170
170
(3)
(4)
160
160
150
-40
150
-40
(4)
-15
10
35
60
85
Tamb (°C)
VSUP = 5 V; maximum current through second amplifier.
-15
(1) IAMP2 = 0 mA
(2) IAMP1 = 10 mA
(2) IAMP2 = 10 mA
(3) IAMP1 = 20 mA
(3) IAMP2 = 20 mA
(4) IAMP1 = 30 mA
(4) IAMP2 = 30 mA
BGA7210
Product data sheet
35
60
85
Tamb (°C)
VSUP = 5 V; maximum current through first amplifier.
(1) IAMP1 = 0 mA
Fig 31. Total current as a function of ambient
temperature; typical values
10
Fig 32. Total current as a function of ambient
temperature; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
23 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000696
25
PL(1dB)
(dBm)
aaa-000697
40
(8)
relative phase
(deg)
23
30
21
20
(7)
19
10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
17
(6)
(5)
(4)
0
(1)
(2)
(3)
15
-10
0
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 85 C; maximum current setting;
attenuation states 0, 7, 15, 23, 31, 39, 47, 55 and 63 are
depicted.
(1) f = 0.7 GHz
2
3
4
5
f (GHz)
VSUP = 5 V; Tamb = 25 C; maximum current setting.
(1) attenuation = 0x00 (minimum)
(2) attenuation = 0x01
(4) attenuation = 0x04
(3) f = 1.7 GHz
(5) attenuation = 0x08
(4) f = 2.2 GHz
(6) attenuation = 0x10
(5) f = 2.8 GHz
(7) attenuation = 0x20
(6) f = 2.8 GHz and Csh used
(8) attenuation = 0x3F (maximum)
(7) f = 3.8 GHz
Fig 33. Output power at 1 dB gain compression as a
function of attenuation state; typical values
Product data sheet
1
(3) attenuation = 0x02
(2) f = 1.4 GHz
BGA7210
0
Fig 34. Relative phase as a function of frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
24 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
aaa-000698
35
aaa-000699
10
NF
(dB)
NF
(dB)
8
25
10
+7
0%
xα
6
(1)
(2)
(3)
(4)
(5)
(6)
(7)
15
5
(1)
(2)
(3)
4
2
-5
0
0
16
32
48
64
attenuation (decimal)
VSUP = 5 V; Tamb = 25 C; maximum current setting.
(1) f = 0.7 GHz
0
1
2
3
4
5
f (GHz)
VSUP = 5 V; maximum gain and maximum current
setting.
(2) f = 1.4 GHz
(1) Tamb = 40 C
(3) f = 1.7 GHz
(2) Tamb = +25 C
(4) f = 2.2 GHz
(3) Tamb = +85 C
(5) f = 2.8 GHz
(6) f = 2.8 GHz and Csh used
(7) f = 3.8 GHz
Fig 35. Noise figure as a function of attenuation state;
typical values
BGA7210
Product data sheet
Fig 36. Noise figure as a function of frequency; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
25 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
12. Package outline
HVQFN32: plastic thermal enhanced very thin quad flat package; no leads;
32 terminals; body 5 x 5 x 0.85 mm
D
B
SOT617-3
A
terminal 1
index area
A
A1
E
detail X
C
e1
e
9
y1 C
C A B
C
v
w
1/2 e b
y
16
L
17
8
e
e2
Eh
1/2 e
24
1
terminal 1
index area
32
25
X
Dh
0
2.5
Dimensions
Unit(1)
mm
5 mm
scale
A(1)
A1
b
max
0.05 0.30
nom 0.85
min
0.00 0.18
c
D(1)
Dh
E(1)
Eh
5.1
3.75
5.1
3.75
0.2
4.9
3.45
4.9
e
e1
e2
0.5
3.5
3.5
L
v
w
y
y1
0.5
0.1
0.05 0.05
0.1
0.3
3.45
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
Outline
version
SOT617-3
References
IEC
JEDEC
JEITA
sot617-3_po
European
projection
Issue date
11-06-14
11-06-21
MO-220
Fig 37. Package outline SOT617-3 (HVQFN32)
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
26 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
13. Packing information
The BGA7210 will be delivered in reel pack SMD 7”, 1500 pieces per reel.
aaa-000870
Fig 38. Carrier tape
14. Abbreviations
Table 15.
Abbreviations
Acronym
Description
CDM
Charged Device Model
ESD
ElectroStatic Discharge
DSA
Digital Step Attenuator
HBM
Human Body Model
IF
Intermediate Frequency
MMIC
Monolithic Microwave Integrated Circuit
POR
Power-On Reset
RF
Radio Frequency
SPI
Serial Peripheral Interface
USB
Universal Serial Bus
WiMAX
Worldwide Interoperability for Microwave Access
15. Revision history
Table 16.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA7210 v.4
20130128
Product data sheet
-
BGA7210 v.3
Modifications:
•
Table 4: updated.
BGA7210 v.3
20121224
Product data sheet
-
BGA7210 v.2
BGA7210 v.2
20120104
Product data sheet
-
BGA7210 v.1
BGA7210 v.1
20111213
Preliminary data sheet
-
-
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
27 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGA7210
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
28 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGA7210
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 28 January 2013
© NXP B.V. 2013. All rights reserved.
29 of 30
BGA7210
NXP Semiconductors
700 MHz to 3800 MHz high linearity variable gain amplifier
18. Contents
1
1.1
1.2
1.3
1.4
2
2.1
2.2
3
4
5
6
7
8
9
9.1
9.2
9.3
10
11
11.1
11.2
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering information . . . . . . . . . . . . . . . . . . . . . 4
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Serial Peripheral Interface . . . . . . . . . . . . . . . . 8
Command word format . . . . . . . . . . . . . . . . . . . 8
Setting current and attenuation . . . . . . . . . . . . 8
SPI timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Power-up and power save. . . . . . . . . . . . . . . . 10
Application information. . . . . . . . . . . . . . . . . . 11
Application board . . . . . . . . . . . . . . . . . . . . . . 11
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26
Packing information . . . . . . . . . . . . . . . . . . . . 27
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 27
Legal information. . . . . . . . . . . . . . . . . . . . . . . 28
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 28
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Contact information. . . . . . . . . . . . . . . . . . . . . 29
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 January 2013
Document identifier: BGA7210
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