Data Sheet

SO
T8
9
BGA3012
1 GHz 12 dB gain wideband amplifier MMIC
Rev. 3 — 26 September 2013
Product data sheet
1. Product profile
1.1 General description
The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity CATV line extenders and drop amplifiers over a frequency
range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package.
1.2 Features and benefits
 Internally biased
 Flat gain
 High linearity with an IP3O of 40 dBm and
an IP2O of 60 dBm
 Noise figure of 3.1 dB
 75  input and output impedance
 Operating from 5 V to 8 V supply
1.3 Applications
 General wideband amplifiers.
 CATV return amplifier; frequency ranges of 5 MHz to 300 MHz.
 CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers,
trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz.
 The product is ideally suited for applications as drop amplifiers in CATV distribution
systems such as FTTH
1.4 Quick reference data
Table 1.
Quick reference data
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ; R1 = 100 ; R2 = 300 .
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
RF input AC coupled
7.6
8
8.4
V
ICC(tot)
total supply current
-
110
125
mA
Tamb
ambient temperature
40
-
+85
C
NF
noise figure
-
3.1
3.6
dB
PL(1dB)
output power at 1 dB gain compression
f = 500 MHz
IP3O
output third-order intercept point
[1]
IP2O
output second-order intercept point
[2]
21.5
23
-
dBm
36
40
-
dBm
-
60
-
dBm
[1]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2  f2  f1, where
f2 = f1  6 MHz. Input power Pi = 20 dBm.
[2]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f2  f1, with
40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm.
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1
RF_OUT and biasing
[1]
2
GND
[2]
3
RF_IN
[1]
Graphic symbol
3
1
2
3
2
sym130
1
[1]
This pin is DC-coupled and requires an external DC-blocking capacitor.
[2]
The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BGA3012
-
plastic surface-mounted package; exposed die pad
for good heat transfer; 3 leads
SOT89
OM7858
EVB
1 GHz 12 dB gain wideband amplifier application
-
OM7862
EVB
5 MHz to 300 MHz 12 dB reverse amplifier application -
OM7866
EVB
40 MHz to 1006 MHz push-pull amplifier application
-
4. Marking
Table 4.
Marking codes
Type number
Marking code
Description
BGA3012
*6W
* = W : made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BGA3012
Product data sheet
Symbol
Parameter
Conditions
Min Max
Unit
VCC
supply voltage
RF input AC coupled
0.6 +15
V
single tone
Pi
input power
-
20
dBm
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
Tamb
ambient temperature
40
+85
C
VESD
electrostatic discharge
voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
2
-
kV
Charged Device Model (CDM);
According JEDEC standard 22-C101B
2
-
kV
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
2 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
Typ
Unit
40
K/W
7. Characteristics
7.1 Forward application
Table 7.
Characteristics at VCC = 8 V
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
Typ Max Unit
RF input AC coupled
7.6
8
supply voltage
ICC(tot)
total supply current
-
110 125
mA
s212
insertion power gain
11
12
13
dB
SLsl
slope straight line
-
0.5
-
dB
FL
flatness of frequency response
-
0.5
-
dB
NF
noise figure
RLout
Product data sheet
Min
VCC
RLin
BGA3012
Conditions
input return loss
output return loss
8.4
V
f = 50 MHz
-
3.0
3.5
dB
f = 500 MHz
-
3.1
3.6
dB
f = 1000 MHz
-
3.4
3.9
dB
f = 50 MHz
-
22
-
dB
f = 500 MHz
-
27
-
dB
f = 1000 MHz
-
29
-
dB
f = 50 MHz
-
21
-
dB
f = 500 MHz
-
22
-
dB
f = 1000 MHz
-
15
-
dB
21.5 23
-
dBm
[1]
36
40
-
dBm
output second-order intercept point
[2]
-
60
-
composite triple beat
[3]
-
75 -
dBc
composite second-order distortion
[3]
-
60 -
dBc
PL(1dB)
output power at 1 dB
gain compression
IP3O
output third-order intercept point
IP2O
CTB
CSO
dBm
[1]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2  f2  f1, where f2 = f1  6 MHz. Input power Pi = 20 dBm.
[2]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f2  f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm.
[3]
Measured with 132 NTSC channels VO = 30 dBmV.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
3 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
Table 8.
Characteristics at VCC = 5 V
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 5 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
4.75 5
5.25 V
total supply current
-
70
85
mA
insertion power gain
-
12
-
dB
ICC(tot)
s212
Typ Max Unit
SLsl
slope straight line
-
0.5
-
dB
FL
flatness of frequency response
-
0.5
-
dB
NF
noise figure
f = 50 MHz
-
2.9
-
dB
f = 500 MHz
-
2.9
-
dB
f = 1000 MHz
-
3.2
-
dB
f = 50 MHz
-
22
-
dB
f = 500 MHz
-
25
-
dB
f = 1000 MHz
-
25
-
dB
RLout
input return loss
output return loss
f = 50 MHz
-
22
-
dB
f = 500 MHz
-
22
-
dB
f = 1000 MHz
-
12
-
dB
-
18
-
dBm
PL(1dB)
output power at 1 dB
gain compression
IP3O
output third-order intercept point
[1]
-
36
-
dBm
output second-order intercept point
[2]
-
54
-
dBm
composite triple beat
[3]
-
70 -
dBc
composite second-order distortion
[3]
-
54 -
dBc
IP2O
CTB
CSO
Product data sheet
Min
RF input AC coupled
supply voltage
RLin
BGA3012
Conditions
VCC
[1]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM3) is 2  f2  f1, where f2 = f1  6 MHz. Input power Pi = 20 dBm.
[2]
The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product
(IM2) is f2  f1, with 40 MHz < f1-f2 < 1006 MHz. Input power Pi = 20 dBm.
[3]
Measured with 132 NTSC channels VO = 30 dBmV.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
4 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
7.2 Return application
Table 9.
Characteristics at VCC = 8 V
Bandwidth 5 MHz to 300 MHz; Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
Product data sheet
Max Unit
supply voltage
7.6
8
8.4
V
ICC(tot)
total supply current
-
110
125
mA
s212
insertion power gain
-
12
-
dB
SLsl
slope straight line
-
0.5
-
dB
FL
flatness of frequency response
-
0.5
-
dB
NF
noise figure
f = 50 MHz
-
3.0
-
dB
RLin
input return loss
f = 5 MHz
-
18.5 -
dB
f = 100 MHz
-
18.5 -
dB
f = 200 MHz
-
18.5 -
dB
f = 300 MHz
-
18.5 -
dB
f = 5 MHz
-
18.5 -
dB
f = 100 MHz
-
18.5 -
dB
f = 200 MHz
-
18.5 -
dB
f = 300 MHz
-
18.5 -
dB
-
23
-
dBm
output return loss
RF input AC coupled
Min Typ
VCC
RLout
BGA3012
Conditions
PL(1dB)
output power at 1 dB
gain compression
IP3O
output third-order intercept point
[1]
-
40
-
dBm
IP2O
output second-order intercept point
[2]
-
60
-
dBm
[1]
The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM3) is 2  f2  f1, where f2 = f1  6 MHz. Input power Pi = 20 dBm.
[2]
The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM2) is f2  f1, with 40 MHz < f1-f2 < 300 MHz. Input power Pi = 20 dBm.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
5 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
Table 10. Characteristics at VCC = 5 V
Bandwidth 5 MHz to 300 MHz; Tamb = 25 C; typical values at VCC = 5 V; ZS = ZL = 75 ;
R1 = 100 ; R2 = 300 .
Symbol Parameter
4.75 5
5.25 V
total supply current
-
70
85
mA
insertion power gain
-
12
-
dB
ICC(tot)
s212
Typ
Max Unit
SLsl
slope straight line
-
0.5
-
dB
FL
flatness of frequency response
-
0.5
-
dB
NF
noise figure
f = 50 MHz
-
2.9
-
dB
RLin
input return loss
f = 5 MHz
-
18.5 -
dB
output return loss
f = 100 MHz
-
18.5 -
dB
f = 200 MHz
-
18.5 -
dB
f = 300 MHz
-
18.5 -
dB
f = 5 MHz
-
18.5 -
dB
f = 100 MHz
-
18.5 -
dB
f = 200 MHz
-
18.5 -
dB
f = 300 MHz
-
18.5 -
dB
-
17
-
dBm
PL(1dB)
output power at 1 dB
gain compression
IP3O
output third-order intercept point
[1]
-
40
-
dBm
output second-order intercept point
[2]
-
55
-
dBm
IP2O
Product data sheet
Min
RF input AC coupled
supply voltage
RLout
BGA3012
Conditions
VCC
[1]
The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM3) is 2  f2  f1, where f2 = f1  6 MHz. Input power Pi = 20 dBm.
[2]
The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product
(IM2) is f2  f1, with 40 MHz < f1-f2 < 300 MHz. Input power Pi = 20 dBm.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
6 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
8. Application information
8.1 Forward application 40 MHz to 1006 MHz
The BGA3012 can be used in other applications. Please contact your local sales
representative for more information. Application notes are available on the NXP website.
8.1.1 Forward application circuit
-
9&&
&
&
/
/
&
5
-
5)BLQ
&
5
8
/
/
&
-
5)BRXW
DDD
Components are listed in Table 11.
Fig 1.
BGA3012 application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
BGA3012
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
7 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
*1'
%*$[[(9%
YHUVLRQ
1RYHPEHU
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*1'
8.1.2 Forward application circuit board layout
-
3&%6SHF)5(U 5)OD\HU PP2KP
&
&
-
-
/
8
&
/
/
/
&
5 & 5
6HPLFRQGXFWRUV
5),1
5)287
DDD
PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm  40 mm; r = 4.6; thickness of copper
layer = 35 m;
Components are listed in Table 11.
Fig 2.
BGA3012 application circuit board layout
Table 11. List of components
See Figure 1 and Figure 2.
Component
Description
Value
Size
Remarks
C1, C2, C3, C4
capacitor
10 nF
SMD 0402
Murata GRM155R71E103KA01D or capacitor of same quality
C5
capacitor
100 pF
SMD 0402
Murata GRM1555C1H101JZ01D or capacitor of same quality
J1, J2
F-connector
75 
-
Bomar 861V509ER6 or F-connector of same quality
J3
header 3-way
-
-
Molex 90121-0763 or header of the same quality
L1, L3
inductor
3.9 nH
SMD 0402
Murata LQG15HS3N9S02D or inductor of same quality
L2
choke
-
SMD 0603
Murata BLM18HD182SN1D or choke of same quality
L4
inductor
880 nH
SMD 1206
Murata LQH31HNR88K03L or inductor of same quality
R1
resistor
100 
SMD 0402
Yageo RC0402FR-07100RL or resistor of same quality
R2
resistor
300 
SMD 0402
Yageo RC0402FR-07300RL or resistor of same quality
U1
BGA3012
-
-
NXP
BGA3012
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
8 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
8.2 Return application 5 MHz to 300 MHz
The BGA3012 can be used in other applications. Please contact your local sales
representative for more information. Application notes are available on the NXP website.
8.2.1 Return application circuit
-
9&&
&
&
/
&
5
-
&
5)BLQ
5
8
&
-
5)BRXW
DDD
Components are listed in Table 11.
Fig 3.
BGA3012 application circuit
All control and supply lines must be decoupled properly. The decoupling capacitors must
be placed as close to the device as possible.
BGA3012
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
9 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
*1'
%*$[[(9%
YHUVLRQ
1RYHPEHU
0+]0+]
9&&
*1'
8.2.2 Return application circuit board layout
-
3&%6SHF)5(U 5)OD\HU PP2KP
&
&
-
8
-
/
&
&
5 & 5
6HPLFRQGXFWRUV
5),1
5)287
DDD
PCB (Printed-Circuit Board) material = FR4; thickness = 1.5 mm; size = 40 mm  40 mm; r = 4.6; thickness of copper
layer = 35 m;
Components are listed in Table 11.
Fig 4.
BGA3012 application circuit board layout
Table 12. List of components
See Figure 1 and Figure 2.
Component
Description
Value
Size
Remarks
C1, C2, C3, C4
capacitor
10 nF
SMD 0402
Murata GRM155R71E103KA01D or capacitor of same quality
C5
capacitor
100 pF
SMD 0402
Murata GRM1555C1H101JZ01D or capacitor of same quality
J1, J2
F-connector
75 
-
Bomar 861V509ER6 or F-connector of same quality
J3
header 3-way
-
-
Molex 90121-0763 or header of the same quality
L2
inductor
22 H
SMD 1206
Murata LQH31CN220K03L or inductor of same quality
R1
resistor
100 
SMD 0402
Yageo RC0402FR-07100RL or resistor of same quality
R2
resistor
300 
SMD 0402
Yageo RC0402FR-07300RL or resistor of same quality
U1
BGA3012
-
-
NXP
BGA3012
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
10 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
9. Package outline
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
SOT89
Fig 5.
JEDEC
JEITA
TO-243
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
Package outline SOT89 (SC-62)
BGA3012
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
11 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
10. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CATV
Community Antenna TeleVision
FTTH
Fiber To The Home
FTTx
Fiber To The “x”
LNA
Low-Noise Amplifier
MMIC
Monolithic Microwave Integrated Circuit
11. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGA3012 v.3
20130926
Product data sheet
-
BGA3012 v.2
Modifications:
•
Table 3 on page 2: Evaluation boards have been added.
BGA3012 v.2
20130415
Product data sheet
-
BGA3012 v.1
BGA3012 v.1
20130319
Preliminary data sheet
-
-
BGA3012
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
12 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGA3012
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
13 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGA3012
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
14 of 15
BGA3012
NXP Semiconductors
1 GHz 12 dB gain wideband amplifier MMIC
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
7.1
7.2
8
8.1
8.1.1
8.1.2
8.2
8.2.1
8.2.2
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Forward application . . . . . . . . . . . . . . . . . . . . . 3
Return application. . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 7
Forward application 40 MHz to 1006 MHz . . . . 7
Forward application circuit . . . . . . . . . . . . . . . . 7
Forward application circuit board layout . . . . . . 8
Return application 5 MHz to 300 MHz . . . . . . . 9
Return application circuit . . . . . . . . . . . . . . . . . 9
Return application circuit board layout . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 September 2013
Document identifier: BGA3012