Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFG35010A
Rev. 2, 12/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
MRFG35010AR1
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ =
140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —10 dB
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
• 10 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D - 02, STYLE 1
NI - 360HF
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
15
Vdc
Gate - Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
33
dBm
Tstg
- 65 to +150
°C
Tch
175
°C
Symbol
Value (1, 2)
Storage Temperature Range
Channel Temperature
(1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
Case Temperature 79°C, 1 W CW
Class AB
Class A
RθJC
4.0
4.1
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010AR1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
Characteristic
IDSS
—
2.9
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
<1
100
μAdc
Off State Drain Current
(VDS = 12 Vdc, VGS = - 2.2 Vdc)
IDSO
—
0.09
1
mAdc
Off State Current
(VDS = 28.5 Vdc, VGS = - 2.5 Vdc)
IDSX
—
5
15
mAdc
Gate - Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
- 1.2
- 0.8
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 12 Vdc, ID = 180 mA)
VGS(Q)
- 1.2
- 0.8
- 0.7
Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 140 mA, Pout = 1 W Avg., f = 3550 MHz,
Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
9
10
—
hD
23
25
—
%
ACPR
—
- 43
- 40
dBc
—
W
Typical RF Performance (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
10
dB
1. Measurements made with device in test fixture.
MRFG35010AR1
2
RF Device Data
Freescale Semiconductor
VBIAS
VSUPPLY
R2
C13
C8
C7
C6
C5
C4
C14
C3
C15
C2
C12
C11
C10
C9
C16
R1
Z9
Z10
Z8
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13
RF
OUTPUT
Z14
Z15
Z16
C17
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z11
Z17
0.044″
0.044″
0.615″
0.044″
0.270″
0.044″
0.434″
0.015″
x 0.250″ Microstrip
x 0.030″ Microstrip
x 0.050″ Microstrip
x 0.070″ Microstrip
x 0.490″ Microstrip
x 0.470″ Microstrip
x 0.110″ Microstrip
x 0.527″ Microstrip
Z9, Z10
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.290″ x 90° Microstrip Radial Stub
0.184″ x 0.390″ Microstrip
0.040″ x 0.580″ Microstrip
0.109″ x 0.099″ Microstrip
0.030″ x 0.225″ Microstrip
0.080″ x 0.240″ Microstrip
0.044″ x 0.143″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C17
6.8 pF Chip Capacitors
100A6R81BW150XT
ATC
C2, C16
10 pF Chip Capacitors
100A100JW150XT
ATC
C3, C15
100 pF Chip Capacitors
100A101JW150XT
ATC
C4, C13, C14
100 pF Chip Capacitors
100B101JW500XT
ATC
C5, C12
1000 pF Chip Capacitors
100B102JW500XT
ATC
C6, C11
0.1 μF Chip Capacitors
200B104KW50XT
ATC
C7, C10
39K Chip Capacitors
200B393KW50XT
ATC
C8, C9
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
R1, R2
50 Ω Chip Resistors
P51ETR - ND
Newark
MRFG35010AR1
RF Device Data
Freescale Semiconductor
3
C8
C9
R2
C7
C6
C13
C5
C12 C11 C10
C4
C14
C3
C15
C2
C16
R1
C1
C17
MRFG35010, Rev. 8
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010AR1
4
RF Device Data
Freescale Semiconductor
14
60
12
50
GT
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
ΓS = 0.850 ∠ −138.7_
ΓL = 0.827 ∠ −157.6_
10
8
40
30
6
20
4
10
ηD
2
10
15
20
25
30
35
ηD, DRAIN EFFICIENCY (%)
GT, TRANSDUCER GAIN (dB)
TYPICAL CHARACTERISTICS
0
40
Pout, OUTPUT POWER (dBm)
−10
0
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
ΓS = 0.850 ∠ −138.7_, ΓL = 0.827 ∠ −157.6_
−20
−30
−5
−10
IRL
−15
−40
−20
−50
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 3. Single - Carrier W - CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR
−60
15
20
25
30
35
−25
40
Pout, OUTPUT POWER (dBm)
Figure 4. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010AR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
60
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz, Single−Carrier
W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
Gps, POWER GAIN (dB)
12
50
40
10
Gps
8
30
20
6
ηD
4
ηD, DRAIN EFFICIENCY (%)
14
10
2
20
24
28
32
36
0
40
Pout, OUTPUT POWER (dBm)
−20
−10
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−30
−15
IRL
−20
−40
−25
−50
ACPR
−60
20
24
28
32
36
IRL, INPUT RETURN LOSS (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 5. Single - Carrier W - CDMA Power Gain
and Drain Efficiency versus Output Power
−30
40
Pout, OUTPUT POWER (dBm)
Figure 6. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35010AR1
6
RF Device Data
Freescale Semiconductor
Zo = 25 Ω
Zload
f = 3550 MHz
Zsource
f = 3550 MHz
VDD = 12 Vdc, IDQ = 140 mA, Pout = 1 W Avg.
f
MHz
Zsource
W
Zload
W
3550
4.6 - j18.7
4.9 - j9.8
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 7. Series Equivalent Source and Load Impedance
MRFG35010AR1
RF Device Data
Freescale Semiconductor
7
Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.25
0.959
- 171.4
9.867
89.9
0.0083
16.6
0.784
- 178.9
0.30
0.959
- 173.7
8.220
87.6
0.0086
18.3
0.784
- 179.6
0.35
0.956
- 175.6
7.055
85.6
0.0083
19.5
0.784
179.7
0.40
0.959
- 177.2
6.192
83.8
0.0088
20.0
0.783
179.2
0.45
0.959
- 178.5
5.509
82.2
0.0089
22.4
0.782
178.7
0.50
0.959
- 179.6
4.969
80.6
0.0089
22.7
0.781
178.2
0.55
0.959
179.3
4.525
79.0
0.0091
23.9
0.781
177.8
0.60
0.959
178.4
4.157
77.6
0.0094
26.0
0.780
177.4
0.65
0.958
177.5
3.844
76.2
0.0095
26.9
0.779
177.0
0.70
0.958
176.7
3.578
74.8
0.0098
28.0
0.779
176.7
0.75
0.958
175.8
3.347
73.4
0.0099
29.2
0.778
176.3
0.80
0.958
175.1
3.147
72.0
0.0103
30.6
0.777
176.0
0.85
0.958
174.3
2.971
70.7
0.0107
31.6
0.776
175.6
0.90
0.957
173.5
2.814
69.4
0.0108
32.0
0.776
175.3
0.95
0.957
172.9
2.675
68.1
0.0111
33.0
0.775
174.9
1.00
0.957
172.2
2.551
66.8
0.0114
33.8
0.774
174.6
1.05
0.958
171.5
2.439
65.4
0.0117
34.1
0.774
174.3
1.10
0.956
170.9
2.336
64.2
0.0119
34.7
0.773
173.9
1.15
0.956
170.1
2.244
62.8
0.0124
35.5
0.773
173.6
1.20
0.956
169.5
2.159
61.6
0.0126
35.3
0.772
173.2
1.25
0.955
168.8
2.083
60.3
0.0129
35.9
0.772
173.0
1.30
0.955
168.1
2.013
59.0
0.0133
36.1
0.772
172.6
1.35
0.955
167.5
1.948
57.7
0.0136
36.7
0.771
172.3
1.40
0.954
166.8
1.888
56.5
0.0139
36.9
0.771
171.9
1.45
0.954
166.2
1.832
55.2
0.0143
37.4
0.770
171.7
1.50
0.953
165.5
1.779
53.9
0.0147
37.8
0.770
171.4
1.55
0.953
164.8
1.730
52.6
0.0151
37.4
0.769
171.1
1.60
0.952
164.1
1.683
51.3
0.0154
38.1
0.769
170.9
1.65
0.953
163.2
1.641
50.1
0.0158
37.7
0.769
170.6
1.70
0.952
162.6
1.598
48.9
0.0161
37.8
0.769
170.5
1.75
0.951
161.8
1.559
47.6
0.0164
37.9
0.769
170.3
1.80
0.952
161.0
1.517
46.4
0.0167
37.9
0.769
170.3
1.85
0.948
161.6
1.549
44.6
0.0178
37.5
0.760
167.3
1.90
0.947
160.9
1.521
43.3
0.0183
37.3
0.759
166.8
1.95
0.947
160.3
1.494
42.0
0.0189
37.2
0.757
166.4
2.00
0.945
159.5
1.470
40.7
0.0194
37.2
0.756
165.9
2.05
0.945
158.9
1.447
39.4
0.0198
36.9
0.754
165.6
2.10
0.945
158.1
1.426
38.0
0.0204
36.4
0.754
165.1
2.15
0.944
157.5
1.407
36.7
0.0209
36.4
0.752
164.7
2.20
0.943
156.8
1.389
35.4
0.0215
36.0
0.751
164.2
2.25
0.942
156.0
1.371
34.0
0.0220
35.9
0.749
163.8
2.30
0.941
155.2
1.355
32.7
0.0226
35.5
0.749
163.2
2.35
0.939
154.6
1.341
31.3
0.0234
34.9
0.745
162.9
2.40
0.939
153.8
1.328
29.9
0.0238
34.2
0.744
162.5
2.45
0.937
153.0
1.316
28.6
0.0245
34.3
0.742
162.1
(continued)
MRFG35010AR1
8
RF Device Data
Freescale Semiconductor
Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.50
0.936
152.2
1.305
27.2
0.0250
33.8
0.740
161.6
2.55
0.935
151.4
1.296
25.8
0.0258
33.4
0.738
161.1
2.60
0.933
150.5
1.287
24.4
0.0264
32.7
0.737
160.7
2.65
0.933
149.8
1.279
23.0
0.0273
32.1
0.736
160.1
2.70
0.930
149.0
1.272
21.6
0.0280
31.7
0.733
159.7
2.75
0.929
148.1
1.266
20.1
0.0288
31.5
0.730
159.2
2.80
0.926
147.2
1.261
18.7
0.0297
30.6
0.728
158.7
2.85
0.925
146.3
1.257
17.2
0.0306
29.9
0.725
158.2
2.90
0.924
145.3
1.254
15.7
0.0314
29.2
0.722
157.7
2.95
0.921
144.4
1.251
14.2
0.0324
28.6
0.720
157.2
3.00
0.919
143.5
1.249
12.7
0.0333
27.8
0.717
156.7
3.05
0.916
142.5
1.249
11.2
0.0343
27.1
0.715
156.0
3.10
0.915
141.4
1.247
9.7
0.0355
26.3
0.710
155.7
3.15
0.912
140.5
1.249
8.1
0.0366
25.3
0.708
155.0
3.20
0.908
139.4
1.250
6.5
0.0377
24.7
0.705
154.5
3.25
0.905
138.3
1.252
4.9
0.0390
23.4
0.701
153.9
3.30
0.903
137.1
1.256
3.3
0.0400
22.2
0.698
153.4
3.35
0.899
136.0
1.260
1.6
0.0413
20.8
0.694
152.8
3.40
0.896
134.8
1.265
- 0.1
0.0422
20.0
0.690
152.2
3.45
0.893
133.6
1.271
- 1.8
0.0434
19.5
0.686
151.6
3.50
0.890
132.3
1.278
- 3.5
0.0450
18.4
0.682
151.0
3.55
0.885
131.0
1.284
- 5.3
0.0464
17.3
0.678
150.4
3.60
0.881
129.6
1.292
- 7.1
0.0478
16.3
0.673
149.8
3.65
0.876
128.1
1.301
- 9.0
0.0494
15.1
0.668
149.2
3.70
0.872
126.7
1.311
- 10.8
0.0510
14.1
0.664
148.6
3.75
0.871
125.1
1.322
- 12.7
0.0530
13.0
0.661
147.8
3.80
0.862
123.7
1.333
- 14.7
0.0543
11.3
0.652
147.3
3.85
0.856
122.0
1.346
- 16.6
0.0563
10.3
0.648
146.7
3.90
0.850
120.3
1.360
- 18.6
0.0583
9.1
0.642
146.0
3.95
0.845
118.6
1.375
- 20.7
0.0605
7.4
0.636
145.5
4.00
0.838
116.7
1.389
- 22.9
0.0624
6.2
0.631
144.8
4.05
0.831
114.8
1.405
- 25.0
0.0646
4.6
0.624
144.1
4.10
0.822
112.9
1.422
- 27.3
0.0671
3.0
0.617
143.5
4.15
0.816
110.8
1.441
- 29.6
0.0696
1.3
0.612
142.7
4.20
0.808
108.6
1.460
- 31.9
0.0721
- 0.4
0.605
142.1
4.25
0.801
106.4
1.480
- 34.4
0.0747
- 2.2
0.599
141.5
4.30
0.792
104.1
1.500
- 36.9
0.0774
- 4.0
0.591
140.7
4.35
0.783
101.6
1.523
- 39.4
0.0804
- 6.1
0.582
140.1
4.40
0.775
99.0
1.545
- 42.1
0.0832
- 8.1
0.576
139.5
4.45
0.765
96.2
1.567
- 44.8
0.0861
- 10.3
0.569
138.8
4.50
0.754
93.3
1.590
- 47.7
0.0894
- 12.4
0.561
138.1
4.55
0.743
90.2
1.611
- 50.5
0.0924
- 14.8
0.555
137.5
4.60
0.731
87.0
1.634
- 53.5
0.0955
- 17.0
0.547
136.8
4.65
0.718
83.8
1.659
- 56.5
0.0989
- 19.5
0.541
136.1
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
9
Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
4.70
0.706
80.3
1.683
- 59.6
0.1025
- 21.9
0.534
135.4
4.75
0.693
76.6
1.706
- 62.7
0.1061
- 24.5
0.526
134.6
4.80
0.680
72.8
1.729
- 66.0
0.1097
- 27.2
0.519
133.9
4.85
0.667
68.8
1.752
- 69.4
0.1136
- 30.0
0.512
133.0
4.90
0.655
64.6
1.775
- 72.8
0.1175
- 32.8
0.504
132.1
4.95
0.642
60.1
1.797
- 76.3
0.1214
- 35.8
0.496
131.3
5.00
0.630
55.5
1.819
- 79.9
0.1254
- 39.0
0.489
130.3
5.05
0.618
50.6
1.839
- 83.6
0.1294
- 42.2
0.481
129.2
5.10
0.608
45.5
1.859
- 87.4
0.1335
- 45.5
0.474
128.1
5.15
0.598
40.2
1.878
- 91.2
0.1377
- 49.1
0.467
126.7
5.20
0.591
34.5
1.896
- 95.2
0.1412
- 52.7
0.459
125.1
5.25
0.583
28.8
1.910
- 99.3
0.1451
- 56.2
0.450
123.6
5.30
0.579
22.7
1.924
- 103.4
0.1488
- 60.1
0.441
121.7
5.35
0.576
16.5
1.937
- 107.7
0.1526
- 63.9
0.431
119.6
5.40
0.576
10.1
1.947
- 112.0
0.1561
- 67.9
0.421
117.2
5.45
0.576
3.5
1.952
- 116.5
0.1594
- 72.0
0.410
114.6
5.50
0.580
- 3.2
1.957
- 121.2
0.1627
- 76.3
0.397
111.4
5.55
0.585
- 9.7
1.953
- 125.8
0.1651
- 80.6
0.383
108.1
5.60
0.592
- 16.2
1.943
- 130.5
0.1675
- 85.0
0.368
104.2
5.65
0.601
- 22.7
1.929
- 135.3
0.1691
- 89.5
0.350
99.8
5.70
0.613
- 28.8
1.913
- 139.9
0.1707
- 93.8
0.331
95.1
5.75
0.627
- 34.6
1.900
- 144.6
0.1724
- 98.2
0.312
89.6
5.80
0.646
- 40.5
1.885
- 149.5
0.1739
- 102.8
0.292
83.2
5.85
0.667
- 46.4
1.864
- 154.6
0.1749
- 107.5
0.272
75.6
5.90
0.688
- 52.2
1.834
- 159.8
0.1753
- 112.4
0.251
66.6
5.95
0.708
- 57.7
1.800
- 164.9
0.1750
- 117.3
0.232
56.0
6.00
0.730
- 63.0
1.760
- 170.1
0.1740
- 122.2
0.215
43.8
6.05
0.751
- 68.2
1.716
- 175.2
0.1728
- 127.1
0.204
29.6
6.10
0.772
- 73.1
1.668
179.7
0.1709
- 132.1
0.200
14.1
6.15
0.793
- 77.7
1.617
174.6
0.1685
- 136.9
0.204
- 1.8
6.20
0.812
- 82.3
1.561
169.6
0.1654
- 141.9
0.218
- 16.7
6.25
0.831
- 86.6
1.504
164.6
0.1620
- 146.8
0.240
- 30.5
6.30
0.850
- 90.8
1.445
159.6
0.1584
- 151.5
0.268
- 42.5
6.35
0.866
- 94.8
1.385
154.7
0.1542
- 156.4
0.299
- 52.6
6.40
0.881
- 98.7
1.323
150.0
0.1498
- 161.0
0.335
- 61.5
6.45
0.896
- 102.3
1.261
145.3
0.1447
- 165.4
0.371
- 69.3
6.50
0.908
- 105.9
1.199
140.7
0.1399
- 169.7
0.407
- 76.1
6.55
0.920
- 109.2
1.138
136.3
0.1351
- 173.9
0.444
- 82.4
6.60
0.930
- 112.4
1.077
132.0
0.1303
- 178.1
0.479
- 88.0
6.65
0.938
- 115.4
1.018
127.8
0.1254
177.8
0.513
- 93.1
6.70
0.946
- 118.3
0.961
123.8
0.1202
173.9
0.547
- 97.9
6.75
0.953
- 121.0
0.906
119.8
0.1153
170.0
0.579
- 102.3
6.80
0.959
- 123.7
0.853
116.0
0.1103
166.4
0.608
- 106.4
6.85
0.967
- 126.4
0.802
112.2
0.1056
162.8
0.637
- 110.2
(continued)
MRFG35010AR1
10
RF Device Data
Freescale Semiconductor
Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
6.90
0.969
- 128.8
0.752
108.7
0.1006
159.3
0.662
- 113.9
6.95
0.971
- 131.2
0.704
105.4
0.0959
156.2
0.686
- 117.2
7.00
0.972
- 133.4
0.660
102.3
0.0915
153.2
0.709
- 120.4
7.05
0.973
- 135.4
0.620
99.4
0.0874
150.3
0.729
- 123.3
7.10
0.974
- 137.3
0.582
96.5
0.0834
147.6
0.749
- 126.0
7.15
0.974
- 139.2
0.547
93.7
0.0795
145.0
0.769
- 128.7
7.20
0.975
- 140.9
0.513
91.0
0.0760
142.4
0.786
- 131.3
7.25
0.976
- 142.6
0.482
88.4
0.0726
140.0
0.802
- 133.7
7.30
0.976
- 144.3
0.453
85.9
0.0694
137.7
0.817
- 136.0
7.35
0.977
- 145.8
0.426
83.5
0.0665
135.2
0.830
- 138.2
7.40
0.978
- 147.3
0.400
81.1
0.0633
133.0
0.843
- 140.2
7.45
0.977
- 148.8
0.376
78.9
0.0605
131.0
0.856
- 142.2
7.50
0.975
- 150.0
0.354
76.8
0.0577
129.4
0.866
- 144.1
7.55
0.975
- 151.4
0.332
74.8
0.0553
127.8
0.878
- 146.0
7.60
0.975
- 152.6
0.313
72.9
0.0531
125.9
0.888
- 147.8
7.65
0.974
- 153.7
0.295
71.1
0.0511
124.2
0.897
- 149.6
7.70
0.976
- 154.7
0.278
69.4
0.0492
123.0
0.906
- 151.2
7.75
0.979
- 155.7
0.263
67.7
0.0475
121.1
0.913
- 152.8
7.80
0.983
- 156.8
0.249
66.0
0.0459
119.0
0.918
- 154.4
7.85
0.986
- 158.0
0.235
64.3
0.0438
117.2
0.925
- 155.8
7.90
0.986
- 159.1
0.222
62.7
0.0421
115.6
0.931
- 157.1
7.95
0.984
- 160.2
0.210
61.0
0.0404
113.5
0.937
- 158.4
8.00
0.983
- 161.2
0.199
59.4
0.0387
111.8
0.944
- 159.7
MRFG35010AR1
RF Device Data
Freescale Semiconductor
11
Table 7. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25°C, 50 ohm system)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.25
0.937
- 166.5
8.882
91.6
0.0167
9.9
0.755
- 175.6
0.30
0.936
- 169.5
7.414
89.0
0.0166
8.8
0.757
- 176.8
0.35
0.934
- 171.9
6.373
86.6
0.0168
8.1
0.760
- 177.8
0.40
0.937
- 173.9
5.598
84.7
0.0170
7.7
0.760
- 178.5
0.45
0.937
- 175.5
4.983
82.8
0.0170
7.7
0.760
- 179.2
0.50
0.936
- 176.9
4.497
81.0
0.0169
7.6
0.761
- 179.8
0.55
0.937
- 178.2
4.098
79.3
0.0172
7.7
0.761
179.7
0.60
0.936
- 179.2
3.765
77.7
0.0171
8.0
0.761
179.2
0.65
0.936
179.7
3.481
76.1
0.0172
7.7
0.761
178.7
0.70
0.936
178.8
3.241
74.6
0.0174
8.0
0.762
178.3
0.75
0.936
177.9
3.031
73.1
0.0173
7.9
0.762
177.9
0.80
0.936
177.0
2.849
71.6
0.0174
8.0
0.761
177.5
0.85
0.936
176.2
2.690
70.2
0.0176
8.6
0.761
177.2
0.90
0.935
175.4
2.548
68.7
0.0177
8.7
0.762
176.9
0.95
0.936
174.7
2.420
67.3
0.0177
8.9
0.761
176.5
1.00
0.935
173.9
2.307
65.9
0.0179
9.1
0.761
176.1
1.05
0.936
173.2
2.206
64.5
0.0181
9.1
0.761
175.8
1.10
0.934
172.6
2.111
63.1
0.0181
9.1
0.761
175.5
1.15
0.934
171.8
2.028
61.7
0.0183
9.4
0.761
175.1
1.20
0.934
171.1
1.949
60.3
0.0184
9.1
0.761
174.8
1.25
0.934
170.4
1.879
59.0
0.0186
9.4
0.762
174.5
1.30
0.934
169.7
1.814
57.6
0.0187
9.6
0.761
174.1
1.35
0.933
169.1
1.755
56.2
0.0188
9.7
0.762
173.8
1.40
0.933
168.4
1.700
54.9
0.0189
9.8
0.762
173.5
1.45
0.933
167.7
1.647
53.5
0.0192
10.0
0.762
173.2
1.50
0.932
167.1
1.598
52.2
0.0194
10.2
0.761
172.9
1.55
0.932
166.4
1.554
50.8
0.0195
10.0
0.761
172.7
1.60
0.932
165.7
1.510
49.5
0.0196
10.2
0.761
172.5
1.65
0.932
164.8
1.472
48.1
0.0198
10.2
0.762
172.2
1.70
0.931
164.1
1.432
46.8
0.0199
10.2
0.762
172.1
1.75
0.931
163.4
1.395
45.5
0.0201
10.3
0.763
171.9
1.80
0.931
162.6
1.357
44.3
0.0202
10.4
0.763
171.9
1.85
0.927
163.2
1.383
42.5
0.0212
10.0
0.755
169.0
1.90
0.926
162.6
1.357
41.2
0.0215
10.0
0.754
168.5
1.95
0.926
162.0
1.332
39.8
0.0216
10.2
0.753
168.1
2.00
0.925
161.2
1.309
38.4
0.0221
10.2
0.752
167.7
2.05
0.925
160.6
1.287
37.1
0.0224
10.0
0.752
167.3
2.10
0.924
159.9
1.267
35.7
0.0226
10.0
0.751
166.9
2.15
0.923
159.3
1.250
34.4
0.0230
10.0
0.751
166.5
2.20
0.923
158.6
1.232
33.0
0.0234
9.8
0.750
166.0
2.25
0.922
157.9
1.215
31.6
0.0236
9.9
0.749
165.6
2.30
0.921
157.1
1.200
30.2
0.0241
9.6
0.749
165.0
2.35
0.919
156.5
1.186
28.9
0.0246
9.3
0.746
164.7
2.40
0.919
155.7
1.173
27.5
0.0249
9.1
0.746
164.3
2.45
0.917
154.9
1.162
26.1
0.0254
9.3
0.744
163.9
(continued)
MRFG35010AR1
12
RF Device Data
Freescale Semiconductor
Table 7. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25°C, 50 ohm system) (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.50
0.917
154.2
1.151
24.7
0.0256
8.8
0.743
163.4
2.55
0.916
153.5
1.141
23.3
0.0262
8.8
0.742
163.0
2.60
0.914
152.6
1.132
21.9
0.0267
8.6
0.741
162.6
2.65
0.914
151.9
1.124
20.4
0.0272
8.2
0.740
162.0
2.70
0.911
151.1
1.116
19.0
0.0277
8.0
0.739
161.6
2.75
0.910
150.3
1.111
17.6
0.0282
8.1
0.736
161.0
2.80
0.908
149.5
1.104
16.1
0.0290
7.7
0.735
160.6
2.85
0.907
148.6
1.100
14.7
0.0296
7.3
0.733
160.1
2.90
0.906
147.7
1.096
13.2
0.0302
7.1
0.731
159.5
2.95
0.903
146.8
1.092
11.7
0.0310
6.6
0.729
159.0
3.00
0.901
145.9
1.089
10.2
0.0317
6.4
0.727
158.5
3.05
0.899
145.0
1.088
8.7
0.0324
5.8
0.725
157.9
3.10
0.898
143.9
1.085
7.2
0.0333
5.3
0.722
157.6
3.15
0.895
143.1
1.086
5.6
0.0340
4.9
0.721
156.8
3.20
0.892
142.0
1.086
4.1
0.0350
4.5
0.719
156.3
3.25
0.889
141.0
1.087
2.5
0.0361
3.8
0.716
155.8
3.30
0.887
139.9
1.089
0.9
0.0371
2.7
0.713
155.2
3.35
0.884
138.9
1.092
- 0.7
0.0379
1.9
0.711
154.6
3.40
0.881
137.8
1.095
- 2.4
0.0386
0.9
0.708
154.0
3.45
0.879
136.6
1.099
- 4.0
0.0394
0.9
0.705
153.4
3.50
0.876
135.4
1.104
- 5.7
0.0406
0.3
0.702
152.8
3.55
0.872
134.1
1.109
- 7.4
0.0418
- 0.6
0.698
152.2
3.60
0.868
132.8
1.115
- 9.2
0.0429
- 1.4
0.695
151.5
3.65
0.864
131.5
1.121
- 11.0
0.0440
- 2.2
0.691
150.9
3.70
0.860
130.1
1.129
- 12.7
0.0452
- 2.9
0.688
150.2
3.75
0.860
128.6
1.138
- 14.6
0.0468
- 3.6
0.686
149.5
3.80
0.852
127.3
1.147
- 16.5
0.0480
- 5.0
0.679
148.9
3.85
0.846
125.7
1.157
- 18.4
0.0494
- 5.8
0.675
148.2
3.90
0.841
124.2
1.168
- 20.3
0.0509
- 6.4
0.670
147.5
3.95
0.837
122.6
1.181
- 22.3
0.0528
- 7.8
0.666
146.8
4.00
0.830
120.8
1.192
- 24.3
0.0543
- 8.7
0.661
146.1
4.05
0.825
119.0
1.206
- 26.4
0.0560
- 9.9
0.656
145.3
4.10
0.817
117.3
1.220
- 28.5
0.0580
- 11.0
0.650
144.7
4.15
0.812
115.3
1.236
- 30.7
0.0600
- 12.2
0.646
143.8
4.20
0.805
113.3
1.252
- 33.0
0.0621
- 13.5
0.641
143.0
4.25
0.799
111.3
1.270
- 35.2
0.0643
- 15.0
0.635
142.2
4.30
0.791
109.0
1.288
- 37.7
0.0665
- 16.6
0.628
141.3
4.35
0.783
106.7
1.308
- 40.1
0.0690
- 18.1
0.621
140.6
4.40
0.777
104.3
1.328
- 42.6
0.0714
- 19.8
0.615
139.8
4.45
0.769
101.7
1.347
- 45.2
0.0739
- 21.5
0.609
138.9
4.50
0.759
98.9
1.370
- 47.9
0.0766
- 23.4
0.602
138.1
4.55
0.749
96.0
1.390
- 50.6
0.0792
- 25.3
0.596
137.2
4.60
0.738
93.1
1.412
- 53.5
0.0819
- 27.3
0.589
136.3
4.65
0.727
90.1
1.436
- 56.4
0.0849
- 29.5
0.583
135.3
(continued)
MRFG35010AR1
RF Device Data
Freescale Semiconductor
13
Table 7. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25°C, 50 ohm system) (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
4.70
0.717
86.7
1.459
- 59.3
0.0880
- 31.6
0.576
134.4
4.75
0.705
83.2
1.482
- 62.4
0.0913
- 33.8
0.568
133.4
4.80
0.693
79.6
1.505
- 65.6
0.0945
- 36.1
0.560
132.3
4.85
0.682
75.8
1.530
- 68.8
0.0977
- 38.6
0.553
131.2
4.90
0.670
71.7
1.554
- 72.2
0.1016
- 41.2
0.544
130.0
4.95
0.658
67.4
1.578
- 75.6
0.1051
- 43.8
0.536
128.9
5.00
0.647
62.9
1.602
- 79.2
0.1089
- 46.6
0.527
127.6
5.05
0.636
58.1
1.626
- 82.8
0.1127
- 49.6
0.519
126.2
5.10
0.625
53.1
1.649
- 86.6
0.1167
- 52.7
0.510
124.8
5.15
0.615
47.9
1.672
- 90.4
0.1207
- 56.1
0.502
123.1
5.20
0.607
42.3
1.694
- 94.4
0.1244
- 59.5
0.492
121.3
5.25
0.599
36.5
1.713
- 98.5
0.1281
- 62.9
0.482
119.4
5.30
0.594
30.4
1.731
- 102.7
0.1319
- 66.6
0.471
117.2
5.35
0.590
24.0
1.750
- 107.0
0.1357
- 70.3
0.460
114.9
5.40
0.589
17.5
1.764
- 111.4
0.1392
- 74.2
0.449
112.3
5.45
0.588
10.7
1.776
- 116.0
0.1428
- 78.2
0.436
109.4
5.50
0.590
3.7
1.785
- 120.8
0.1461
- 82.6
0.423
106.0
5.55
0.593
- 3.2
1.787
- 125.6
0.1488
- 86.7
0.407
102.4
5.60
0.598
- 10.1
1.784
- 130.4
0.1514
- 91.0
0.392
98.2
5.65
0.605
- 17.0
1.777
- 135.3
0.1533
- 95.6
0.373
93.6
5.70
0.616
- 23.5
1.767
- 140.2
0.1551
- 100.0
0.354
88.4
5.75
0.629
- 29.8
1.757
- 145.1
0.1571
- 104.5
0.334
82.7
5.80
0.648
- 36.1
1.744
- 150.3
0.1584
- 109.1
0.314
76.0
5.85
0.668
- 42.5
1.724
- 155.6
0.1596
- 113.9
0.294
68.3
5.90
0.687
- 48.8
1.697
- 160.9
0.1599
- 118.7
0.275
59.4
5.95
0.706
- 54.8
1.664
- 166.2
0.1597
- 123.7
0.257
49.1
6.00
0.726
- 60.5
1.627
- 171.5
0.1589
- 128.5
0.243
37.5
6.05
0.746
- 66.1
1.587
- 176.8
0.1578
- 133.4
0.234
24.5
6.10
0.766
- 71.3
1.542
178.0
0.1562
- 138.3
0.231
10.5
6.15
0.785
- 76.3
1.494
172.8
0.1542
- 143.2
0.236
- 3.7
6.20
0.803
- 81.1
1.441
167.6
0.1515
- 148.1
0.249
- 17.1
6.25
0.820
- 85.6
1.388
162.4
0.1484
- 153.0
0.269
- 29.9
6.30
0.838
- 90.0
1.332
157.3
0.1450
- 157.8
0.293
- 41.1
6.35
0.853
- 94.2
1.274
152.3
0.1410
- 162.5
0.322
- 51.0
6.40
0.867
- 98.2
1.216
147.5
0.1368
- 167.0
0.355
- 59.8
6.45
0.880
- 102.0
1.157
142.7
0.1323
- 171.3
0.388
- 67.7
6.50
0.892
- 105.6
1.099
138.0
0.1280
- 175.6
0.423
- 74.6
6.55
0.902
- 109.0
1.041
133.5
0.1236
- 179.7
0.457
- 81.0
6.60
0.911
- 112.2
0.985
129.2
0.1193
176.3
0.490
- 86.7
6.65
0.918
- 115.3
0.929
125.0
0.1149
172.1
0.523
- 91.9
6.70
0.926
- 118.2
0.876
120.9
0.1102
168.3
0.555
- 96.8
6.75
0.933
- 121.0
0.825
116.9
0.1058
164.6
0.585
- 101.4
6.80
0.938
- 123.7
0.777
112.9
0.1012
161.0
0.613
- 105.6
6.85
0.946
- 126.3
0.729
109.2
0.0968
157.4
0.641
- 109.5
(continued)
MRFG35010AR1
14
RF Device Data
Freescale Semiconductor
Table 7. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 140 mA, TC = 25°C, 50 ohm system) (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
6.90
0.948
- 128.8
0.684
105.6
0.0930
154.1
0.665
- 113.3
6.95
0.950
- 131.1
0.638
102.3
0.0882
151.3
0.688
- 116.7
7.00
0.952
- 133.3
0.598
99.2
0.0843
148.5
0.711
- 119.9
7.05
0.953
- 135.3
0.561
96.2
0.0805
145.7
0.730
- 122.8
7.10
0.953
- 137.2
0.526
93.3
0.0771
142.9
0.750
- 125.6
7.15
0.954
- 139.1
0.493
90.4
0.0738
140.2
0.770
- 128.3
7.20
0.956
- 140.8
0.462
87.7
0.0701
137.8
0.786
- 131.0
7.25
0.957
- 142.4
0.434
85.1
0.0672
135.5
0.802
- 133.4
7.30
0.958
- 144.1
0.407
82.7
0.0645
133.4
0.817
- 135.7
7.35
0.959
- 145.5
0.382
80.3
0.0617
130.8
0.831
- 138.0
7.40
0.961
- 147.0
0.359
77.9
0.0589
128.7
0.843
- 140.0
7.45
0.961
- 148.5
0.337
75.7
0.0561
126.6
0.855
- 141.9
7.50
0.959
- 149.8
0.316
73.6
0.0535
125.1
0.865
- 143.8
7.55
0.960
- 151.1
0.297
71.6
0.0515
123.7
0.877
- 145.8
7.60
0.960
- 152.3
0.279
69.8
0.0496
122.1
0.887
- 147.6
7.65
0.960
- 153.4
0.263
67.9
0.0476
120.3
0.895
- 149.4
7.70
0.962
- 154.4
0.247
66.3
0.0459
118.9
0.905
- 151.0
7.75
0.967
- 155.4
0.234
64.8
0.0446
117.2
0.912
- 152.6
7.80
0.970
- 156.6
0.221
63.0
0.0430
115.2
0.917
- 154.2
7.85
0.974
- 157.8
0.209
61.4
0.0414
113.5
0.923
- 155.6
7.90
0.975
- 158.9
0.198
59.7
0.0397
111.3
0.928
- 156.9
7.95
0.973
- 159.9
0.186
58.0
0.0379
109.5
0.934
- 158.3
8.00
0.973
- 161.0
0.176
56.5
0.0360
108.7
0.941
- 159.5
MRFG35010AR1
RF Device Data
Freescale Semiconductor
15
PACKAGE DIMENSIONS
G
2x
K
S
(INSULATOR)
1
bbb
B
(FLANGE)
T A
M
bbb
Q
bbb
M
D
T A
M
B
M
T A
M
B
M
M
N (LID)
T A
M
2x
2x
B
M
B
3
2
ccc
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
M
B
R (LID)
M
ccc
M
T A
E
M
B
H
C
T
M
SEATING
PLANE
(INSULATOR)
aaa
A
M
T A
M
B
M
M
F
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.225
.235
.125
.176
.034
.044
.055
.065
.004
.006
.562 BSC
.077
.087
.085
.115
.355
.365
.355
.365
.125
.135
.225
.235
.225
.235
.005
.010
.015
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.47
0.89
1.12
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
2.16
2.92
9.02
9.27
9.96
10.16
3.18
3.43
5.72
5.97
5.72
5.97
0.13
0.25
0.38
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
A
CASE 360D - 02
ISSUE C
NI - 360HF
MRFG35010AR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
• Initial Release of Data Sheet
1
June 2006
• Removed R5 suffix from part number and Tape and Reel info, p. 1
2
Dec. 2008
• Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for
standardization across products, p. 1
• Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1
• Added Table 3, ESD Protection Characteristics, p. 1; renumbered subsequent tables
MRFG35010AR1
RF Device Data
Freescale Semiconductor
17
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MRFG35010AR1
Document Number: MRFG35010A
Rev. 2, 12/2008
18
RF Device Data
Freescale Semiconductor