Data Sheet

INTEGRATED CIRCUITS
SA601
Low voltage LNA and mixer – 1 GHz
Product data
Supersedes data of 1994 Dec 15
2004 Dec 14
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
DESCRIPTION
PIN CONFIGURATION
The SA601 is a combined RF amplifier and mixer designed for
high-performance low-power communication systems from
800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure
at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of
–2dBm at the input at 900MHz. The nominal current drawn from a
single 3V supply is 7.4mA. The Mixer can be powered down to
further reduce the supply current to 4.4mA.
DK Package
VCC 1
20 VCC
LNA GND 2
19 GND
LNA IN 3
FEATURES
GND 4
17 GND
GND 5
16 MIXER IN
GND 6
15 GND
MIXER PWRDN 7
14 MIXER OUT
GND 8
13 MIXER OUT
• Low current consumption: 7.4mA nominal, 4.4mA with the mixer
powered-down
• Outstanding LNA noise figure: 1.6dB at 900MHz
• High system power gain: 18dB (LNA + Mixer) at 900MHz
• Excellent gain stability versus temperature and supply voltage
• External >-7dBm LO can be used to drive the mixer
18 LNA OUT
LOIN1 9
12 GND
LOIN2 10
11 V
CC
SR00059
Figure 1. Pin Configuration
APPLICATIONS
• 900MHz cellular front-end (NADC, GSM, AMPS, TACS)
• 900MHz cordless front-end (CT1, CT2)
• 900MHz receivers
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
-40 to +85°C
SA601DK
SOT266-1
20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)
BLOCK DIAGRAM
VCC
GND
LNA
OUT
GND
MIXER
IN
GND
20
19
18
17
16
15
MIXER
OUT
MIXER
OUT
GND
14
13
12
11
9
10
VCC
IF
RF
IF
LO
BUFFER
LNA
1
2
3
4
VCC
GND
LNA IN
GND
5
GND
6
7
GND
MIXER
PWRDN
Figure 2. Block Diagram
2004 Dec 14
2
8
GND
LO IN1
LO IN2
SR00058
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
ABSOLUTE MAXIMUM RATINGS3
PARAMETER
SYMBOL
voltage1
VCC
Supply
VIN
Voltage applied to any other pin
PD
Power dissipation, TA = 25°C (still
20-Pin Plastic SSOP
RATING
UNITS
-0.3 to +6
V
-0.3 to (VCC + 0.3)
V
980
mW
air)2
TJMAX
Maximum operating junction temperature
150
°C
PMAX
Maximum power input/output
+20
dBm
TSTG
Storage temperature range
–65 to +150
°C
NOTE:
1. Transients exceeding 8V on VCC pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA: 20-Pin SSOP = 110°C/W
3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
RATING
UNITS
Supply voltage
2.7 to 5.5
V
TA
Operating ambient temperature range
-40 to +85
°C
TJ
Operating junction temperature
-40 to +105
°C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
7.4
ICC
VLNA–IN
VLNA–OUT
VMX–IN
2004 Dec 14
Supply
Su
ly current
Mixer power-down input low
4.4
mA
LNA input bias voltage
0.78
V
LNA output bias voltage
2.1
V
Mixer RF input bias voltage
0.94
V
3
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
AC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25°C; LOIN = -7dBm @ 964MHz; unless otherwise stated.
LIMITS
SYMBOL
S21
PARAMETER
TEST CONDITIONS
-3σ
TYP
+3σ
10
11.5
13
UNITS
Amplifier gain
881MHz
∆S21/∆T
Gain temperature sensitivity
881MHz
0.003
dB/°C
∆S21/∆f
Gain frequency variation
800MHz - 1.2GHz
0.01
dB/MHz
881MHz
-20
dB
S12
Amplifier reverse isolation
match1
dB
S11
Amplifier input
881MHz
-10
dB
S22
Amplifier output match1
881MHz
-10
dB
Amplifier input 1dB gain compression
881MHz
-16
dBm
P-1dB
IP3
Amplifier input third order intercept
NF
Amplifier noise figure
f2 – f1 = 25kHz, 881MHz
-3.5
-2
-0.5
dBm
881MHz
1.3
1.6
1.9
dB
VGC
Mixer voltage conversion gain: RP = RL = 1kΩ
fS = 881MHz, fLO = 964MHz,
fIF = 83MHz
18.0
19.5
21.0
dB
PGC
Mixer power conversion gain: RP = RL = 1kΩ
fS = 881MHz, fLO = 964MHz,
fIF = 83MHz
5.0
6.5
8.0
dB
S11M
Mixer input match1
881MHz
NFM
Mixer SSB noise figure
881MHz
P-1dB
Mixer input 1dB gain compression
881MHz
IP3M
Mixer input third order intercept
IP2INT
f2 – f1 = 25kHz, 881MHz
-10
8.0
9.5
dB
11.0
-13
-3.5
-2
dB
dBm
-0.5
dBm
Mixer input second order intercept
881MHz
12
dBm
PRFM-IF
Mixer RF feedthrough
881MHz
-7
dB
PLO-IF
LO feedthrough to IF
881MHz
-25
dB
PLO-RFM
LO to mixer input feedthrough
881MHz
-38
dB
PLO-RF
LO to LNA input feedthrough
881MHz
-40
dB
PLNA–RFM
LNA output to mixer input
881MHz
-40
dB
PRFM–LO
Mixer input to LO feedthrough
881MHz
-23
dB
LO drive level
964MHz
-7
dBm
LOIN
NOTE:
1. Simple L/C elements are needed to achieve specified return loss.
2004 Dec 14
4
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
C15
J1
LNA IN
w = 10 mils
L = 535 mils
J5
LNA OUT
**
w = 15 mils
L = 95 mils
U1
1
2
3
4
5
6
7
8
9
10
C3
100pF
C12
2.2pF
C13
100pF
w = 15 mils
L = 110 mils
J2
EXT LO
**
w = 10 mils
L = 535 mils
L1
56nH
C1
100pF
C2
2.7pF
C11
100pF
VCC
1µF
(-7dBm, 964MHz)
C10
Vcc
GND
LNA IN
GND
GND
Vcc
GND
LNA OUT
GND
MIXER IN
GND
MIXER OUT
MIXER OUT
GND
Vcc
GND
MIXER PD
GND
LO IN
LO IN
20
19
18
17
16
15
14
13
12
11
C9
4.7pF
w = 15 mils
L = 190 mils
J4
MIXER IN
100pF
C7
VCC
33pF
L3
270nH
C8
100nF
C5
SA601
R1
100Ω
L2
18pF
470nH
R2
C14
100nF
C4
100pF
VCC
*SEE MIXER POWER GAIN NOTE BELOW
** SPIRAL INDUCTORS ON NATURAL FR-4, 62 MILS THICK
** * SEE MIXER FILTER INTERFACE NOTE BELOW
*
2.2k
C6
8.2pF
J3
MIXER OUT
(50Ω, 83MHz)
** *
SR00060
Figure 3. Application Circuit
CIRCUIT TECHNOLOGY
LNA
IP3 Performance: C9 between Pin 16 and ground can be removed
to introduce 3dB mismatch loss, while improving the IP3 to +3dBm.
The associated noise figure is 11dB.
Impedance Match: Intrinsic return loss at the input and output ports
is 7dB and 9dB, respectively. With no external matching, the
associated LNA gain is ≈10dB and the noise figure is ≈1.4dB.
However, the return loss can be improved at 881MHz using
suggested L/C elements (Figure 5) as the LNA is unconditionally
stable.
Mixer
Noise Match: The LNA achieves 1.6dB noise figure at 881MHz
when S11 = -10dB. Further improvements in S11 will slightly
decrease the NF and increase S21.
Power Gain: The gain can be increased by approximately 1.5dB by
placing R2 across C7, instead of C5.
Input Match: The mixer is configured for maximum gain and best
noise figure. The user needs to supply L/C elements to achieve this
performance.
Power Down: The mixer can be disabled by connecting Pin 7 to
ground. When the mixer is disabled, 3mA is saved.
Temperature Compensation: The LNA has a built-in temperature
compensation scheme to reduce the gain drift to 0.003dB/°C from
–40°C to +85°C.
Supply Voltage Compensation: Unique circuitry provides gain
stabilization over wide supply voltage range. The gain changes no
more than 0.5dB when VCC increases from 3V to 5V.
Power Combining: The mixer output circuit features passive
power combining (patent pending) to optimize conversion gain and
noise figure performance without using extra DC current or
degrading the IP3. For IF frequencies significantly different than
83MHz, the component values must be altered accordingly.
LO Drive Level: Resistor R1 can be replaced by an inductor of
4.7nH and C3 should be adjusted to achieve a good return loss at
the LO port. Under this condition, the mixer will operate with less
than -10dBm LO drive.
Filter Interface: For system integration where a high impedance
filter of 1kΩ is to be cascaded at the mixer IF output, capacitors C5
and C6 need to be changed to 27pF and 1000pF, respectively.
2004 Dec 14
5
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
SR00061
Figure 4. SA601 Demoboard Layout (Not Actual Size)
2004 Dec 14
6
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
TYPICAL PERFORMANCE CHARACTERISTICS
CH1
S11
1
U
FS
4:
63.852 Ω
-160.23 Ω
4.9269 pF
200.000 000 MHz
1:
21.286 Ω
-12.381 Ω
900 MHz
2:
27.471 Ω
-35.48 Ω
600 MHz
36.43 Ω
-70.445 Ω
400 MHz
3:
START
CH1
S22
200.000 000
1
U
MHz
FS
STOP
4:
99.543 Ω
1200.000 000
-85.949 Ω
MHz
8.937 pF
200.000 000 MHz
1:
2:
3:
START
200.000 000
MHz
STOP
1200.000 000
31.48 Ω
-14.217 Ω
900 MHz
44.82 Ω
-30.191 Ω
600 MHz
58.725 Ω
-50.83 Ω
400 MHz
MHz
SR00062
Figure 5. LNA Input and Output Match (at Device Pin)
2004 Dec 14
7
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1
S21
7
U
FS
4:
-150.58 °
6.2863 U
200.000 000 MHz
1:
3.2504U
91.219 °
900 MHz
2:
4.6877U
112.03 °
600 MHz
5.3895U
130.33 °
400 MHz
3:
CH1
START
200.000 000
S12
100 mU FS
MHz
STOP
4:
1200.000 000
MHz
35.343 mU
-76.128 °
200.000 000 MHz
1:
89.561mU
61.127 °
900 MHz
2:
74.51mU
64.608 °
600 MHz
58.082mU
67.162 °
400 MHz
3:
START
200.000 000
MHz
STOP
1200.000 000
MHz
SR00063
Figure 6. LNA Transmission and Isolation Characteristics (at Device Pin)
2004 Dec 14
8
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1
S11
1
U
FS
4:
10.867Ω
1.6426Ω
1.2543 nH
200.000 000 MHz
1:
START
200.000 000
MHz
STOP
1200.000 000
6.7168 Ω
9.5952 Ω
900 MHz
MHz
SR00064
Figure 7. Mixer RF Input Match (at Device Pin)
Table 1. Typical LNA and Mixer S-Parameters
LNA
Mixer
f
S11
S22
S21
S12
S11
200MHz
63.852Ω – j 160.23Ω
99.543Ω – j 85.949Ω
6.2863U ∠ 150.58°
35.343mU ∠ 76.128°
10.867Ω + j 1.6426Ω
300MHz
44.879Ω – j 101.69Ω
73.387Ω – j 67.707Ω
5.8096U ∠ 140.47°
47.946mU ∠ 71.169°
10.4Ω + j 3.4609Ω
400MHz
36.43Ω – j 70.445Ω
58.725Ω – j 50.83Ω
5.3895U ∠ 130.33°
58.082mU ∠ 67.162°
10.067Ω + j 4.897Ω
500MHz
30.395Ω – j 48.393Ω
49.928Ω – j 38.813Ω
5.0428U ∠ 120.5°
66.44mU ∠ 66.388°
9.394Ω + j 6.0142Ω
600MHz
27.471Ω – j 35.48Ω
44.82Ω – j 30.191Ω
4.6877U ∠ 112.03°
74.51mU ∠ 64.608°
8.8945Ω + j 7.2227Ω
700MHz
24.428Ω – j 25Ω
39.268Ω – j 24.502Ω
4.2409U ∠ 104.44°
82.235mU ∠ 65.002°
8.1353Ω + j 8.1597Ω
800MHz
22.434Ω – j 17.255Ω
34.664Ω – j 18.59Ω
3.7491U ∠ 97.765°
86.582mU ∠ 62.743°
7.976Ω + j 9.1958Ω
900MHz
21.286Ω – j 12.381Ω
31.48Ω – j 14.217Ω
3.2504U ∠ 91.219°
89.561mU ∠ 61.127°
6.7168Ω + j 9.5952Ω
1000MHz
20.261Ω – j 8.7109Ω
27.887Ω – j 10.77Ω
2.8785U ∠ 84.957°
95.135mU ∠ 60.539°
6.2393Ω + j 10.271Ω
1100MHz
19.718Ω – j 6.252Ω
25.741Ω – j 8.2607Ω
2.5752U ∠ 82.893°
97.348mU ∠ 62.202°
6.0791Ω + j 10.571Ω
1200MHz
19.101Ω – j 4.9316Ω
23.584Ω – j 6.2715Ω
2.1386U ∠ 80.257°
96.558mU ∠ 61.563°
5.8185Ω + j 10.288Ω
2004 Dec 14
9
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Mixer RF Input Match vs. Frequency
(VCC = 3V)
ICC vs. VCC and Temperature
9
CH1 S 11
log MAG
2 dB/ REF -5 dB
8.5
8
7.5
Icc (mA)
-40°C
7
25°C
–40°C
25°C
+85°C
6.5
85°C
6
5.5
5
2.5
3
3.5
4
4.5
5
5.5
VCC (V)
START 800.000 000 MHz
LNA Gain (S21) vs. Frequency
(VCC = 3V)
CH1 S 21
log MAG
STOP 1 200. 000 000 MHz
LNA Isolation (S12) vs. Frequency
(VCC = 3V)
CH1 S 12
1 dB/ REF 10 dB
log MAG
5 dB/ REF -10 dB
85°C
25°C
-40°C
-40°C
25°C
85°C
START 800.000 000 MHz
CH1 S 11
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
LNA Output Match (S22) vs. Frequency
(VCC = 3V)
LNA Input Match (S11) vs. Frequency
(VCC = 3V)
log MAG
STOP 1 200. 000 000 MHz
CH1 S 22
1 dB/ REF -10 dB
log MAG
3 dB/ REF -10 dB
-40°C
25°C
85°C
-40°C
25°C
85°C
START 800.000 000 MHz
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
Figure 8. Typical Performance Characteristics (cont.)
2004 Dec 14
10
STOP 1 200. 000 000 MHz SR00065
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Mixer Gain @ 83MHz vs. VCC and Temperature
Mixer IP3 @ 83MHz vs. VCC and Temperature
3
7
–40°C
2
25°C
–40°C
25°C
6.5
+85°C
+70°C
1
+85°C
GAIN (dB)
GAIN (dB)
0
6
–1
–2
–3
–4
5.5
–5
–6
–7
5
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
VCC (V)
VCC (V)
Mixer NF @ 83MHz vs. VCC and Temperature
12
LO to Mixer in Feedthrough vs. VCC
–36
–40°C
25°C
11.5
+85°C
–37
10.5
dB
NF (dB)
11
–38
10
–39
9.5
–40
9
2.5
2.5
3
3.5
4
4.5
5
3
3.5
5.5
4
4.5
5
5.5
VCC (V)
VCC (V)
LO to LNA Input Feedthrough vs. VCC
Mixer Input to LO Feedthrough vs. VCC
–36
–20
–21
–37
dB
dB
–22
–38
–23
–39
–24
–25
–40
2.5
3
3.5
4
4.5
5
2.5
5.5
3
3.5
VCC (V)
Figure 9. Typical Performance Characteristics (cont.)
2004 Dec 14
4
VCC (V)
11
4.5
5
5.5
SR00066
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Mixer RF Feedthrough vs. VCC
LO Feedthrough to IF vs. VCC
–23
–5
–24
dB
dB
–6
–25
–7
–26
–8
–27
2.5
2.5
3
3.5
4
4.5
5
3
3.5
4
5.5
4.5
5
5.5
VCC (V)
VCC (V)
LNA Gain vs. VCC and Temperature
LNA Output to Mixer Input vs. VCC
12.50
–38
–40°C
25°C
12.00
–40
GAIN (dB)
dB
–39
+85°C
11.50
–41
11.00
–42
2.5
3
3.5
4
4.5
5
5.5
VCC (V)
10.50
2.5
3
3.5
4
4.5
5
5.5
VCC (V)
LNA IP3 vs. VCC and Temperature
4.00
LNA NF vs. VCC and Temperature
2.50
2.00
2.00
1.50
–2.00
dB
dB
0.00
–4.00
1.00
–40°C
–6.00
–40°C
25°C
25°C
+85°C
+85°C
0.50
–8.00
–10.00
2.5
3
3.5
4
4.5
5
0.00
5.5
2.5
VCC (V)
3
3.5
Figure 10. Typical Performance Characteristics (cont.)
2004 Dec 14
4
VCC (V)
12
4.5
5
5.5
SR00067
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
2004 Dec 14
13
SOT266-1
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
REVISION HISTORY
Rev
Date
Description
_2
20041214
Product data (9397 750 14447); supersedes SA601 of 15 Dec 1994.
Modifications:
• Added package outline and legal information
_1
2004 Dec 14
19941215
Product specification
14
Philips Semiconductors
Product data
1GHz low voltage LNA and mixer
SA601
Data sheet status
Level
Data sheet status [1]
Product
status [2] [3]
Definitions
I
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.
 Koninklijke Philips Electronics N.V. 2004
All rights reserved. Printed in U.S.A.
Contact information
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 12-04
For sales offices addresses send e-mail to:
[email protected]
Document order number:
2004 Dec 14
15
9397 750 14447
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