Data Sheet

SA615
High performance low power mixer FM IF system
Rev. 4 — 14 November 2014
Product data sheet
1. General description
The SA615 is a high performance monolithic low-power FM IF system incorporating a
mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,
muting, logarithmic Received Signal Strength Indicator (RSSI), and voltage regulator. The
SA615 combines the functions of NXP Semiconductors SA602A and SA604A, but
features a higher mixer input intercept point, higher IF bandwidth (25 MHz) and
temperature compensated RSSI and limiters permitting higher performance application.
The SA615 is available in 20-lead SO (surface-mounted miniature package) and 20-lead
SSOP (shrink small outline package).
The SA605 and SA615 are functionally the same device types. The difference between
the two devices lies in the guaranteed specifications. The SA615 has a higher ICC, lower
input third-order intercept point, lower conversion mixer gain, lower limiter gain, lower AM
rejection, lower SINAD, higher THD, and higher RSSI error than the SA615. Both the
SA605 and SA615 devices meet the EIA specifications for AMPS and TACS cellular radio
applications.
2. Features and benefits













Low power consumption: 5.7 mA typical at 6 V
Mixer input to >500 MHz
Mixer conversion power gain of 13 dB at 45 MHz
Mixer noise figure of 4.6 dB at 45 MHz
XTAL oscillator effective to 150 MHz (L/C oscillator to 1 GHz local oscillator can be
injected)
102 dB of IF amplifier/limiter gain
25 MHz limiter small signal bandwidth
Temperature-compensated logarithmic Received Signal Strength Indicator (RSSI) with
a dynamic range in excess of 90 dB
Two audio outputs — muted and unmuted
Low external component count; suitable for crystal/ceramic/LC filters
Excellent sensitivity: 0.22 V into 50  matching network for 12 dB SINAD
(Signal-to-Noise-and-Distortion ratio) for 1 kHz tone with RF at 45 MHz and IF at
455 kHz
SA615 meets cellular radio specifications
ESD hardened
SA615
NXP Semiconductors
High performance low power mixer FM IF system
3. Applications










Cellular radio FM IF
High performance communications receivers
Single conversion VHF/UHF receivers
SCA receivers
RF level meter
Spectrum analyzer
Instrumentation
FSK and ASK data receivers
Log amps
Wideband low current amplification
4. Ordering information
Table 1.
Ordering information
Type number
Topside
marking
Package
Name
Description
Version
SA615D/01
SA615D
SO20
plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
SA615DK/01
SA615DK
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
4.1 Ordering options
Table 2.
Ordering options
Type number
Orderable
part number
Package
Packing method
Minimum
order
quantity
Temperature
SA615D/01
SA615D/01,112
SO20
Standard marking
* IC’s tube - DSC bulk pack
1520
Tamb = 40 C to +85 C
SA615D/01,118
SO20
Reel 13” Q1/T1
*Standard mark SMD
2000
Tamb = 40 C to +85 C
SA615DK/01,112
SSOP20
Standard marking
* IC’s tube - DSC bulk pack
1350
Tamb = 40 C to +85 C
SA615DK/01,118
SSOP20
Reel 13” Q1/T1
*Standard mark SMD
2500
Tamb = 40 C to +85 C
SA615DK/01
SA615
Product data sheet
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
20
19
18
17
16
15
14
IF amp
13
LIMITER_OUT
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_IN
GND
IF_AMP_OUT
IF_AMP_DECOUPL
IF_AMP_IN
IF_AMP_DECOUPL
MIXER_OUT
5. Block diagram
12
11
limiter
mixer
RSSI
quad
6
7
8
9
RSSI_OUT
MUTED_AUD_OUTP
UNMUTED_AUD_OUTP
10
QUADRATURE_IN
5
VCC
mute
MUTE_INPUT
RF_BYPASS
B
4
OSC_IN
2
E
3
OSC_OUT
1
RF_IN
OSCILLATOR
aaa-012909
Fig 1.
SA615
Product data sheet
Block diagram
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
6. Pinning information
6.1 Pinning
RF_IN
1
20 MIXER_OUT
RF_BYPASS
2
19 IF_AMP_DECOUPL
OSC_OUT
3
18 IF_AMP_IN
OSC_IN
4
17 IF_AMP_DECOUPL
MUTE_INPUT
5
VCC
6
RSSI_OUT
7
14 LIMITER_IN
MUTE_AUD_OUTP
8
13 LIMITER_DECOUPL
UNMUTE_AUD_OUTP
9
12 LIMITER_DECOUPL
SA615D/01
QUADRATURE_IN 10
16 IF_AMP_OUT
15 GND
11 LIMITER_OUT
aaa-013002
Fig 2.
Pin configuration for SO20
RF_IN
1
20 MIXER_OUT
RF_BYPASS
2
19 IF_AMP_DECOUPL
OSC_OUT
3
18 IF_AMP_IN
OSC_IN
4
17 IF_AMP_DECOUPL
MUTE_INPUT
5
VCC
6
RSSI_OUT
7
14 LIMITER_IN
MUTE_AUD_OUTP
8
13 LIMITER_DECOUPL
UNMUTE_AUD_OUTP
9
12 LIMITER_DECOUPL
SA615DK/01
QUADRATURE_IN 10
16 IF_AMP_OUT
15 GND
11 LIMITER_OUT
aaa-013003
Fig 3.
SA615
Product data sheet
Pin configuration for SSOP20
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
6.2 Pin description
Table 3.
SA615
Product data sheet
Pin description
Symbol
Pin
Description
RF_IN
1
RF input
RF_BYPASS
2
RF bypass pin
OSC_OUT
3
oscillator output
OSC_IN
4
oscillator input
MUTE_INPUT
5
mute input
VCC
6
positive supply voltage
RSSI_OUT
7
RSSI output
MUTED_AUD_OUTP
8
mute audio output
UNMUTED_AUD_OUTP
9
unmute audio output
QUADRATURE_IN
10
quadrature detector input terminal
LIMITER_OUT
11
limiter amplifier output
LIMITER_DECOUPL
12
limiter amplifier decoupling pin
LIMITER_DECOUPL
13
limiter amplifier decoupling pin
LIMITER_IN
14
limiter amplifier input
GND
15
ground; negative supply
IF_AMP_OUT
16
IF amplifier output
IF_AMP_DECOUPL
17
IF amplifier decoupling pin
IF_AMP_IN
18
IF amplifier input
IF_AMP_DECOUPL
19
IF amplifier decoupling pin
MIXER_OUT
20
mixer output
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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SA615
NXP Semiconductors
High performance low power mixer FM IF system
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC
supply voltage
Tstg
storage temperature
Tamb
ambient temperature
Conditions
operating
Min
Max
Unit
-
9
V
65
+150
C
40
+85
C
8. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Zth(j-a)
transient thermal impedance
from junction to ambient
SA615D/01 (SO20)
90
K/W
SA615DK/01 (SSOP20)
117
K/W
9. Static characteristics
Table 6.
Static characteristics
VCC = +6 V; Tamb = 25 C; unless specified otherwise.
SA615
Product data sheet
Symbol
Parameter
VCC
supply voltage
ICC
supply current
Vth
threshold voltage
Conditions
Min
Typ
Max
Unit
4.5
-
8.0
V
-
5.7
7.4
mA
mute switch-on
1.7
-
-
V
mute switch-off
-
-
1.0
V
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
6 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
10. Dynamic characteristics
Table 7.
Dynamic characteristics
Tamb = 25 C; VCC = +6 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 5.1 k; RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak deviation.
Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below
are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the
ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Mixer/oscillator section (external LO = 300 mV)
fi
input frequency
-
500
-
MHz
fosc
oscillator frequency
-
150
-
MHz
NF
noise figure
at 45 MHz
-
5.0
-
dB
IP3i
input third-order intercept point
FL1 = 45.0 MHz; FL2 = 45.06 MHz
-
12
-
dBm
Gp(conv)
conversion power gain
matched 14.5 dBV step-up
8.0
13
-
dB
50  source
-
1.7
-
dB
single-ended input
3.0
4.7
-
k
-
3.5
4.0
pF
Ri(RF)
RF input resistance
Ci(RF)
RF input capacitance
Ro(mix)
mixer output resistance
MIXER_OUT pin
1.25
1.50
-
k
Gamp(IF)
IF amplifier gain
50  source
-
39.7
-
dB
Glim
limiter gain
50  source
-
62.5
-
dB
Pi(IF)
IF input power
for 3 dB input limiting sensitivity;
R17 = 5.1 k; test at IF_AMP_IN pin
-
109
-
dBm
AM
AM rejection
80 % AM 1 kHz
25
33
43
dB
audio level
RMS value; R10 = 100 k;
15 nF de-emphasis
60
150
260
mV
unmuted audio level
R11 = 100 k; 150 pF de-emphasis
-
530
-
mV
SINAD
signal-to-noise-and-distortion ratio
RF level 118 dB
-
12
-
dB
THD
total harmonic distortion
30
42
-
dB
S/N
signal-to-noise ratio
no modulation for noise
-
68
-
dB
Vo(RSSI)
RSSI output voltage
IF; R9 = 100 k
IF level = 118 dBm
0
160
800
mV
IF level = 68 dBm
1.7
2.5
3.3
V
IF level = 18 dBm
IF section
[1]
3.6
4.8
5.8
V
RSSI(range) RSSI range
R9 = 100 k; IF_AMP_OUT pin
-
80
-
dB
RSSI
RSSI variation
R9 = 100 k; IF_AMP_OUT pin
-
2
-
dB
Zi(IF)
IF input impedance
1.40
1.6
-
k
Zo(IF)
IF output impedance
0.85
1.0
-
k
Zi(lim)
limiter input impedance
1.40
1.6
-
k
Ro
output resistance
unmuted audio
-
58
-
k
muted audio
-
58
-
k
SA615
Product data sheet
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Rev. 4 — 14 November 2014
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SA615
NXP Semiconductors
High performance low power mixer FM IF system
Table 7.
Dynamic characteristics …continued
Tamb = 25 C; VCC = +6 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 5.1 k; RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak deviation.
Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below
are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the
ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
unmuted audio level
RMS value; VCC = 4.5 V;
RF level = 27 dBm
-
450
-
mV
RSSI output voltage
system; VCC = 4.5 V;
RF level = 27 dBm
-
4.3
-
V
RF/IF section (internal LO)
Vo(RSSI)
[1]
The generator source impedance is 50 , but the SA615 input impedance at pin 18 (IF_AMP_IN) is 1500 . As a result, IF level refers
to the actual signal that enters the SA615 input (pin 8, MUTED_AUD_OUTP) which is about 21 dB less than the ‘available power’ at the
generator.
SA615
Product data sheet
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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SA615
NXP Semiconductors
High performance low power mixer FM IF system
11. Application information
R17
C15
5.1 kΩ
FL1
FL2
C23
20
19
C21
18
C18 C17
17
16
15
14
13
12
11
700 Ω
IF amp
limiter
mixer
quad
detector
RSSI
mute
switch
OSCILLATOR
1
2
3
4
5
C3
R5(1)
6
7
8
9
C9
R9
R10
R11
C10
C11
C12
C13
10
C8
C1
C7
C2
L2
C5
C26
C24
L3
C25
C6
X1
UNMUTED
AUDIO
AUDIO
RSSI
OUTPUT
VCC
C14
MUTE
45 MHz
input
L1
aaa-012965
The layout is very critical in the performance of the receiver. We highly recommend our demo
board layout.
All of the inductors, the quad tank, and their shield must be grounded. A 10 F to 15 F or higher
value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this
capacitor ensures consistent good sensitivity in production. A 0.1 F bypass capacitor on the
supply pin, and grounded near the 44.545 MHz oscillator improves sensitivity by 2 dB to 3 dB.
(1) R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.
Recommended value is 22 k, but should not be below 10 k.
Fig 4.
SA615
Product data sheet
SA615 45 MHz application circuit
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Rev. 4 — 14 November 2014
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9 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
Table 8.
SA615 application component list
Component
Value
Description
Package
Part number
C1
33 pF
NPO ceramic
C0805K
445-127x-1-ND
C2
220 pF
NPO ceramic
C0805K
445-7484-6-ND
C3
5 pF to 30 pF
NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP
490-1994-2-ND
C5
100 nF  10 %
100 nF  10 % monolithic ceramic
311-1036-1-ND
C6
5 pF to 30 pF
NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP
C7
1 nF
ceramic
C0805K
399-3293-1-ND
C8
10 pF
NPO ceramic
C0805K
490-1994-2-ND
C9
100 nF  10 %
monolithic ceramic
C0805K
311-1036-1-ND
C10[1]
22 F
tantalum
C1812
478-3117-1-ND
C0805K
490-1994-2-ND
C11
100 nF  10 %
monolithic ceramic
C0805K
311-1036-1-ND
C12
15 nF  10 %
ceramic
C0805K
399-1161-1-ND
C13
150 pF  2 %
N1500 ceramic
C0805K
399-1125-1-ND
C14
100 nF  10 %
monolithic ceramic
C0805K
311-1036-1-ND
C15
10.0 pF
NPO ceramic
C0805K
311-1036-1-ND
C17
100 nF  10 %
monolithic ceramic
C0805K
311-1036-1-ND
C18
100 nF  10 %
monolithic ceramic
C0805K
311-1036-1-ND
C21
100 nF  10 %
monolithic ceramic
C0805K
311-1036-1-ND
C0805K
311-1036-1-ND
C23
100 nF  10 %
monolithic ceramic
C24
5 pF to 30 pF trim
NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP
C25
470 pF
monolithic ceramic
C0805K
C26
39 pF
monolithic ceramic
C0805K
490-1994-2-ND
CN1
8-pin header
MA08-1
399-8083-10ND
CN2
BU-SMA-H
J502-ND-1420701-881/886
520-142-0701-881
FL1, FL2[2]
ceramic filter;
Murata CFUKF455KB4X or equivalent
surface mount
CFUKF455KB4X-R0
L1
330 nH
Coilcraft 1008CS-331
WE-KI_1008_B
1008CS-331
L2
1.2 H
fixed inductor Coilcraft 1008CS-122XKLC
WE-KI_1008_B
1008CS-122
L3
220 H
fixed inductor
WE-GF_L
1812LS-224XJB
R9
100 k  1 %
1/4 W metal film
R0603
311-100KCRCT-ND
R10[3]
100 k  1 %
1/4 W metal film
C0805K
311-100KCRCT-ND
R11[3]
100 k  1 %
1/4 W metal film
C0805K
311-100KCRCT-ND
R17
5.1 k  5 %
1/4 W carbon composition
C0805K
311-5.10KCRDKR-ND
U1
X1
44.545 MHz
SA605DK
TSSOP20
568-2087-5-nd
resonant 3rd-overtone crystal
UM-1
49HC/11453
[1]
This value can be reduced when a battery is the power source.
[2]
The ceramic filters can be 30 kHz SFG455A3s made by Murata, which have 30 kHz IF bandwidth (they come in blue), or 16 kHz
CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.
[3]
Optional.
SA615
Product data sheet
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
10 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
RF GENERATOR(1)
45 MHz
SA615 DEMOBOARD
VCC (+6 V)
RSSI(2)
AUDIO
DATA
DC VOLTMETER
C-MESSAGE(3)
HP339A DISTORTION
ANALYZER(4)
SCOPE
aaa-013153
(1) The C-message filter has a peak gain of 100 dB for accurate measurements. Without the gain, the
measurements may be affected by the noise of the scope and HP339 analyzer.
(2) Set your RF generator at 45.000 MHz, use a 1 kHz modulation frequency and a 6 kHz deviation if
you use 16 kHz filters, or 8 kHz if you use 30 kHz filters.
(3) The smallest RSSI voltage (that is, when no RF input is present and the input is terminated) is a
measure of the quality of the layout and design. If the lowest RSSI voltage is 250 mV or higher, it
means that the receiver is in regenerative mode. In that case, the receiver sensitivity is worse than
expected.
(4) The measured typical sensitivity for 12 dB SINAD should be 0.22 V or 120 dBm at the RF input.
Fig 5.
SA615 application circuit test setup
20
RF = 45 MHz
IF = 455 kHz
VCC = 6 V
0
THD + NOISE
AM (80 % MOD)
NOISE
−20
(dB)
6
RSSI
(V)
AUDIO REF = 174 mV (RMS value)
5
4
THD + NOISE
3
−40
AM (80 % MOD)
2
−60
RSSI (V)
−80
−100
−130
1
NOISE
−110
−90
−70
−50
−30
RF input level (dBm)
−10
10
0
20
aaa-012967
Audio out:
C message weighted
0 dB reference = recovered audio for 8 kHz peak deviation (dB)
Fig 6.
SA615
Product data sheet
Performance of the SA615 application board at 25 C
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Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
11.1 Circuit description
The SA615 is an IF signal processing system suitable for second IF or single conversion
systems with input frequency as high as 1 GHz. The bandwidth of the IF amplifier is about
40 MHz, with 39.7 dB of gain from a 50  source. The bandwidth of the limiter is about
28 MHz with about 62.5 dB of gain from a 50  source. However, the gain/bandwidth
distribution is optimized for 455 kHz, 1.5 k source applications. The overall system is
well-suited to battery operation as well as high-performance and high-quality products of
all types.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include
a noise figure of 5 dB, conversion gain of 13 dB, and input third-order intercept of
10 dBm. The oscillator operates in excess of 1 GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler oscillators
are recommended for crystal configurations up to 150 MHz.
The output of the mixer is internally loaded with a 1.5 k resistor, permitting direct
connection to a 455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is
also 1.5 k. With most 455 kHz ceramic filters and many crystal filters, no impedance
matching network is necessary. To achieve optimum linearity of the log signal strength
indicator, there must be a 12 dBV insertion loss between the first and second IF stages. If
the IF filter or inter-stage network does not cause 12 dBV insertion loss, a fixed or variable
resistor can be added between the first IF output (pin 16, IF_AMP_OUT) and the
inter-stage network.
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is
AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase
relationship to the internal signal, drives the other port of the multiplier cell.
Overall, the IF section has a gain of 90 dB. For operation at intermediate frequencies
greater than 455 kHz, special care must be given to layout, termination, and inter-stage
loss to avoid instability.
The demodulated output of the quadrature detector is available at two pins, one
continuous and one with a mute switch. Signal attenuation with the mute activated is
greater than 60 dB. The mute input is very high-impedance and is compatible with CMOS
or TTL levels.
A log signal strength completes the circuitry. The output range is greater than 90 dB and is
temperature compensated. This log signal strength indicator exceeds the criteria for
AMPS or TACS cellular telephone.
Remark: dBV = 20log VO / VI.
SA615
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
12 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
12. Test information
−25 dB,
1500 Ω/50 Ω pad
−10.6 dB,
50 Ω/50 Ω pad
96.5 Ω
2430 Ω
50.5 Ω
−29 dB,
929 Ω/50 Ω pad
3880 Ω
51.5 Ω
71.5 Ω
32.6 Ω
C24
−36 dB,
156 kΩ/50 Ω pad
96.5 Ω
51.7 Ω
71.5 Ω
32.8 Ω
R17
C22 C20
SW9
−10.6 dB,
50 Ω/50 Ω pad
SW8
1.3 kΩ
C16
C19
C15
5.1 kΩ
SW7
SW6
FL1
SW5
FL2
C23
20
C18 C17
C21
19
18
17
16
15
14
13
12
11
700 Ω
IF amp
limiter
mixer
quad
detector
RSSI
mute
switch
2
1
base
emitter
OSCILLATOR
3
4
5
6
7
8
9
C9
R9
R10
R11
C10
C11
C12
C13
10
C3
SW1
SW3
L1
C7
45 MHz
mini-circuit
ZSC2-1B
Fig 7.
SA615
Product data sheet
X1
C6
C4
ext.
R7
LOC osc
44.545 MHz 30.5 Ω
45.06
MHz
R6
R8
178 Ω 39.2 Ω
C26
IFT1
C14
UNMUTED
AUDIO
R2
‘C’ WEIGHTED
AUDIO
MEASUREMENT
CIRCUIT
AUDIO
R3
L2
RSSI
OUTPUT
C3
51.1 Ω
SW2
R4
C5
MUTE
C2
R1
SW4
C8
VCC
C1
aaa-012966
SA615 45 MHz test circuit (relays as shown)
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Rev. 4 — 14 November 2014
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Table 9.
Automatic test circuit component list
Component
Description
C1
33 pF NPO ceramic
C2
180 pF NPO ceramic
C3, C6
5 pF to 30 pF variable capacitor; Murata TZC3P300A 110R00
C5, C9, C11, C14, C17, 100 nF  10 % monolithic ceramic
C18, C21, C23
C7
1 nF ceramic
C8, C15
10 pF NPO ceramic
C10[1]
6.8 F tantalum (minimum)
C12
15 nF  10 % ceramic
C13
150 pF  2 % N1500 ceramic
C26
390 pF  10 % monolithic ceramic
FL1
ceramic filter Murata SFG455A3 or equivalent
FL2
IFT1
330 H variable shielded inductor, Toko 836AN-0129Z
L1
330 nH Coilcraft 1008CS-331
L2
1.2 H Coilcraft 1008CS-122
X1
44.545 MHz 3rd Overtone series resonant crystal in the HC-49U case
R9
100 k  1 % 1/4 W metal film
R10, R11
100 k  1 % 1/4 W metal film (optional)
R17
5.1 k  5 % 1/4 W carbon composition
[1]
SA615
Product data sheet
This value can be reduced when a battery is the power source.
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Rev. 4 — 14 November 2014
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13. Package outline
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SA615
Product data sheet
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Rev. 4 — 14 November 2014
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15 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
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SA615
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
16 of 26
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NXP Semiconductors
High performance low power mixer FM IF system
14. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
14.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
14.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
14.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA615
Product data sheet
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14.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 10) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 10 and 11
Table 10.
SnPb eutectic process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
 350
< 2.5
235
220
 2.5
220
220
Table 11.
Lead-free process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 10.
SA615
Product data sheet
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High performance low power mixer FM IF system
temperature
maximum peak temperature
= MSL limit, damage level
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 10. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
SA615
Product data sheet
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Rev. 4 — 14 November 2014
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High performance low power mixer FM IF system
15. Soldering: PCB footprints
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SA615
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
20 of 26
SA615
NXP Semiconductors
High performance low power mixer FM IF system
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SA615
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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High performance low power mixer FM IF system
16. Abbreviations
Table 12.
SA615
Product data sheet
Abbreviations
Acronym
Description
AM
Amplitude Modulation
AMPS
Advanced Mobile Phone System
ASK
Amplitude Shift Keying
CMOS
Complementary Metal-Oxide Semiconductor
ESD
ElectroStatic Discharge
ESR
Equivalent Series Resistor
FM
Frequency Modulation
FSK
Frequency Shift Keying
IF
Intermediate Frequency
L/C
inductor-capacitor filter
RF
Radio Frequency
RSSI
Received Signal Strength Indicator
SCA
Subsidiary Communications Authorization
SINAD
Signal-to-Noise-And-Distortion ratio
TACS
Total Access Communication System
THD
Total Harmonic Distortion
TTL
Transistor-Transistor Logic
UHF
Ultra High Frequency
VHF
Very High Frequency
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17. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
SA615 v.4
20141114
Product data sheet
-
SA615 v.3
•
•
Modifications:
Table 8 “SA615 application component list” updated
Figure 4 “SA615 45 MHz application circuit” updated
SA615 v.3
20140512
Product data sheet
-
SA615 v.2
SA615 v.2
19971107
Product specification
853-1402 18665
NE/SA615 v.1
NE/SA615 v.1
19921103
Product specification
853-1402 08109
-
SA615
Product data sheet
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18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
SA615
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: sales[email protected]
SA615
Product data sheet
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Rev. 4 — 14 November 2014
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High performance low power mixer FM IF system
20. Contents
1
2
3
4
4.1
5
6
6.1
6.2
7
8
9
10
11
11.1
12
13
14
14.1
14.2
14.3
14.4
15
16
17
18
18.1
18.2
18.3
18.4
19
20
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Application information. . . . . . . . . . . . . . . . . . . 9
Circuit description . . . . . . . . . . . . . . . . . . . . . . 12
Test information . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Soldering of SMD packages . . . . . . . . . . . . . . 17
Introduction to soldering . . . . . . . . . . . . . . . . . 17
Wave and reflow soldering . . . . . . . . . . . . . . . 17
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 17
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 18
Soldering: PCB footprints. . . . . . . . . . . . . . . . 20
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 23
Legal information. . . . . . . . . . . . . . . . . . . . . . . 24
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 24
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Contact information. . . . . . . . . . . . . . . . . . . . . 25
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 November 2014
Document identifier: SA615