Data Sheet

SA636
Low voltage high performance mixer FM IF system
with high-speed RSSI
Rev. 7 — 16 June 2016
Product data sheet
1. General description
The SA636 is a low-voltage high performance monolithic FM IF system with high-speed
RSSI incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers,
quadrature detector, logarithmic Received Signal Strength Indicator (RSSI), voltage
regulator, wideband data output and fast RSSI op amps. The SA636 is available in
20-lead SSOP (Shrink Small Outline Package) and HVQFN20 (quad flat package).
The SA636 was designed for high bandwidth portable communication applications and
will function down to 2.7 V. The RF section is similar to the famous SA605. The data
output has a minimum bandwidth of 600 kHz. This is designed to demodulate wideband
data. The RSSI output is amplified. The RSSI output has access to the feedback pin. This
enables the designer to adjust the level of the outputs or add filtering.
SA636 incorporates a power-down mode which powers down the device when
POWER_DOWN_CTRL pin is LOW. Power-down logic levels are CMOS and TTL
compatible with high input impedance.
2. Features and benefits
















Wideband data output (600 kHz minimum)
Fast RSSI rise and fall times
Low power consumption: 6.5 mA typical at 3 V
Mixer input to >500 MHz
Mixer conversion power gain of 11 dB at 240 MHz
Mixer noise figure of 12 dB at 240 MHz
XTAL oscillator effective to 150 MHz (LC oscillator to 1 GHz local oscillator can be
injected)
92 dB of IF amp/limiter gain
25 MHz limiter small signal bandwidth
Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with
a dynamic range in excess of 90 dB
RSSI output internal op amp
Internal op amps with rail-to-rail outputs
Low external component count; suitable for crystal/ceramic/LC filters
Excellent sensitivity: 0.54 V into 50  matching network for 12 dB SINAD
(Signal-to-Noise And Distortion ratio) for 1 kHz tone with RF at 240 MHz and IF at
10.7 MHz
10.7 MHz filter matching (330 )
Power-down mode (ICC = 200 A)
SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
 ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per
JESD22-C101
 Latch-up testing is done to JEDEC Standard JESD78 Class II, Level B
3. Applications







DECT (Digital European Cordless Telephone)
Digital cordless telephones
Digital cellular telephones
Portable high performance communications receivers
Single conversion VHF/UHF receivers
FSK and ASK data receivers
Wireless LANs
4. Ordering information
Table 1.
Ordering information
Type number Topside
mark
Package
SA636BS
636B
HVQFN20 plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 4  4  0.85 mm
SOT917-1
SA636DK/01
SA636DK
SSOP20
SOT266-1
SA636
Product data sheet
Name
Description
Version
plastic shrink small outline package; 20 leads; body width 4.4 mm
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Rev. 7 — 16 June 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
IF amp
limiter
quad
mixer
FAST
RSSI
OSC
POWER
DOWN
SA636
Product data sheet
QUADRATURE IN
DATA_OUT
POWER_DOWN_CTRL
RSSI_OUT
OSC_IN
audio
RSSI
RSSI_FEEDBACK
B
VCC
E
OSC_OUT
RF_IN_DECOUPL
RF_IN
VCC
Fig 1.
LIMITER_OUT
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_IN
GND
IF_AMP_OUT
IF_AMP_DECOUPL
IF_AMP_IN
IF_AMP_DECOUPL
MIXER_OUT
5. Block diagram
002aaf661
Block diagram of SA636
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
6. Pinning information
6.1 Pinning
RF_IN
1
20 MIXER_OUT
RF_IN_DECOUPL
2
19 IF_AMP_DECOUPL
OSC_OUT
3
18 IF_AMP_IN
OSC_IN
4
17 IF_AMP_DECOUPL
VCC
5
RSSI_FEEDBACK
6
RSSI_OUT
7
14 LIMITER_IN
POWER_DOWN_CTRL
8
13 LIMITER_DECOUPL
DATA_OUT
9
12 LIMITER_DECOUPL
16 IF_AMP_OUT
SA636DK/01
15 GND
QUADRATURE_IN 10
11 LIMITER_OUT
002aaf660
16 IF_AMP_IN
17 IF_AMP_DECOUPL
18 MIXER_OUT
terminal 1
index area
19 RF_IN
20 RF_IN_DECOUPL
Pin configuration for SSOP20
OSC_OUT
1
15 IF_AMP_DECOUPL
OSC_IN
2
14 IF_AMP_OUT
13 GND
12 LIMITER_IN
11 LIMITER_DECOUPL
9
LIMITER_DECOUPL 10
8
DAP(1)
LIMITER_OUT
5
QUADRATURE_IN
RSSI_OUT
SA636BS
7
4
6
3
DATA_OUT
VCC
AUDIO_FEEDBACK
POWER_DOWN
Fig 2.
002aag294
Transparent top view
(1) Die Attach Paddle (DAP).
Fig 3.
SA636
Product data sheet
Pin configuration for HVQFN20
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Rev. 7 — 16 June 2016
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
6.2 Pin description
Table 2.
Pin description
Symbol
Product data sheet
Description
SSOP20
HVQFN20
RF_IN
1
19
RF input
RF_IN_DECOUPL
2
20
RF input decoupling pin
OSC_OUT
3
1
oscillator output (emitter)
OSC_IN
4
2
oscillator input (base)
VCC
5
3
positive supply voltage
RSSI_FEEDBACK
6
4
RSSI amplifier negative feedback terminal
RSSI_OUT
7
5
RSSI output
POWER_DOWN_CTRL
8
6
power-down control; active HIGH
DATA_OUT
9
7
data output
QUADRATURE_IN
10
8
quadrature detector input terminal
LIMITER_OUT
11
9
limiter amplifier output
LIMITER_DECOUPL
12
10
limiter amplifier decoupling pin
LIMITER_DECOUPL
13
11
limiter amplifier decoupling pin
LIMITER_IN
14
12
limiter amplifier input
GND
15
13[1]
ground; negative supply
IF_AMP_OUT
16
14
IF amplifier output
IF_AMP_DECOUPL
17
15
IF amplifier decoupling pin
IF_AMP_IN
18
16
IF amplifier input
IF_AMP_DECOUPL
19
17
IF amplifier decoupling pin
MIXER_OUT
20
18
mixer output
-
-
DAP
exposed die attach paddle; connect to ground
[1]
SA636
Pin
For the HVQFN20 package, the exposed die attach paddle must be connected to device ground pin 13 and
the PCB ground plane. GND pin must be connected to supply ground for proper device operation. For
enhanced thermal, electrical, and board level performance, the exposed pad needs to be soldered to the
board using a corresponding thermal pad on the board and for proper heat conduction through the board,
thermal vias need to be incorporated in the printed-circuit board in the thermal pad region.
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Rev. 7 — 16 June 2016
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
7. Functional description
The SA636 is an IF signal processing system suitable for second IF or single conversion
systems with input frequency as high as 1 GHz. The bandwidth of the IF amplifier is about
40 MHz with 38 dB of gain from a 50  source. The bandwidth of the limiter is about
28 MHz with about 54 dB of gain from a 50  source. However, the gain/bandwidth
distribution is optimized for 10.7 MHz, 330  source applications. The overall system is
well-suited to battery operation as well as high performance and high-quality products of
all types such as cordless and cellular hand-held phones.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include
a noise figure of 14 dB, conversion gain of 11 dB, and input third-order intercept of
16 dBm. The oscillator will operate in excess of 1 GHz in L/C tank configurations. Hartley
or Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler oscillators
are recommended for crystal configurations up to 150 MHz.
The output of the mixer is internally loaded with a 330  resistor permitting direct
connection to a 10.7 MHz ceramic filter for narrowband applications. The input resistance
of the limiting IF amplifiers is also 330 . With most 10.7 MHz ceramic filters and many
crystal filters, no impedance matching network is necessary. For applications requiring
wideband IF filtering, such as DECT, external LC filters are used (see Figure 15).
To achieve optimum linearity of the log signal strength indicator, there must be a 6 dBV
insertion loss between the first and second IF stages. If the IF filter or interstage network
does not cause 6 dBV insertion loss, a fixed or variable resistor can be added between
the first IF output (IF_AMP_OUT) and the interstage network.
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is
AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase
relationship to the internal signal, drives the other port of the multiplier cell.
Overall, the IF section has a gain of 90 dB for operation at intermediate frequency at
10.7 MHz. Special care must be given to layout, termination, and interstage loss to avoid
instability.
The demodulated output (DATA_OUT) of the quadrature is a voltage output. This output is
designed to handle a minimum bandwidth of 600 kHz. This is designed to demodulate
wideband data, such as in DECT applications.
A Received Signal Strength Indicator (RSSI) completes the circuitry. The output range is
greater than 90 dB and is temperature compensated. This log signal strength indicator
exceeds the criteria for AMPS or TACS cellular telephone, DECT and RCR-28 cordless
telephone. This signal drives an internal op amp. The op amp is capable of rail-to-rail
output. It can be used for gain, filtering, or second-order temperature compensation of the
RSSI, if needed.
Remark: dBV = 20log VO/VI.
SA636
Product data sheet
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Rev. 7 — 16 June 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
8. Internal circuitry
Table 3.
Internal circuits for each pin
Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in ‘Pin’ column.
Symbol
Pin
DC V
RF_IN
1 (19)
+1.07 V
RF_IN_DECOUPL
2 (20)
+1.07 V
Equivalent circuit
0.8 kΩ
0.8 kΩ
1
2
002aac983
OSC_OUT
3 (1)
+1.57 V
OSC_IN
4 (2)
+2.32 V
18 kΩ
4
MIX
3
002aac984
5 (3)
VCC
+3.00 V
VREF
5
BANDGAP
002aac985
RSSI_FEEDBACK
6 (4)
+0.20 V
VCC
6
−
+
002aac986
SA636
Product data sheet
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Rev. 7 — 16 June 2016
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
Table 3.
Internal circuits for each pin …continued
Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in ‘Pin’ column.
Symbol
Pin
DC V
RSSI_OUT
7 (5)
+0.20 V
Equivalent circuit
VCC
7
002aac988
POWER_DOWN_CTRL
8 (6)
+2.75 V
R
8
R
002aac989
DATA_OUT
9 (7)
+1.09 V
VCC
9
002aac990
QUADRATURE_IN
10 (8)
+3.00 V
80 kΩ
10
20 μA
002aac991
LIMITER_OUT
11 (9)
+1.35 V
11
8.8 kΩ
002aac992
SA636
Product data sheet
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Rev. 7 — 16 June 2016
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
Table 3.
Internal circuits for each pin …continued
Pin numbers shown for SSOP20 package; HVQFN20 pins shown in parentheses in ‘Pin’ column.
Symbol
Pin
DC V
LIMITER_DECOUPL
12 (10) +1.23 V
LIMITER_DECOUPL
13 (11) +1.23 V
LIMITER_IN
14 (12) +1.23 V
Equivalent circuit
14
330 Ω
50 μA
13
12
002aac993
GND
15 (13) 0 V
IF_AMP_OUT
16 (14) +1.22 V
-
140 Ω
16
8.8 kΩ
002aac994
IF_AMP_DECOUPL
17 (15) +1.22 V
IF_AMP_IN
18 (16) +1.22 V
IF_AMP_DECOUPL
19 (17) +1.22 V
18
330 Ω
50 μA
19
17
002aac995
MIXER_OUT
20 (18) +1.03 V
110 Ω
20
400 μA
002aac996
SA636
Product data sheet
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Rev. 7 — 16 June 2016
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
9. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCC
Conditions
Min
Max
Unit
supply voltage
0.3
7
V
Vn
voltage on any other pin
0.3
VCC + 0.3
V
Tstg
storage temperature
65
+150
C
Tamb
ambient temperature
40
+85
C
operating
10. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Max
Unit
Zth(j-a)
transient thermal impedance
from junction to ambient
SA636DK/01 (SSOP20)
117
K/W
SA636BS (HVQFN20)
40
K/W
Conditions
Min
Max
Unit
11. Static characteristics
Table 6.
Static characteristics
VCC = 3 V; Tamb = 25 C; unless otherwise specified.
Symbol
Parameter
Typ
VCC
supply voltage
2.7
3.0
5.5
V
ICC
supply current
DC current drain;
POWER_DOWN_CTRL = HIGH
5.5
6.5
7.5
mA
II
input current
POWER_DOWN_CTRL = LOW
10
-
+10
A
POWER_DOWN_CTRL = HIGH
10
-
+10
A
VI
input voltage
POWER_DOWN_CTRL = LOW
0
-
0.3  VCC
V
POWER_DOWN_CTRL = HIGH
0.7  VCC
-
VCC
V
-
0.2
0.5
mA
ICC(stb)
standby supply current
POWER_DOWN_CTRL = LOW
tON
power-up time
RSSI valid (10 % to 90 %)
-
10
-
s
tOFF
power-down time
RSSI invalid (90 % to 10 %)
-
5
-
s
SA636
Product data sheet
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Rev. 7 — 16 June 2016
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
12. Dynamic characteristics
Table 7.
Dynamic characteristics
Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up;
IF frequency = 10.7 MHz; RF level = 45 dBm; FM modulation = 1 kHz with 125 kHz peak deviation. Audio output with
C-message weighted filter and de-emphasis capacitor. Test circuit Figure 19. The parameters listed below are tested using
automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance
limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Mixer/oscillator section (external LO = 160 mV RMS value)
fi
input frequency
-
500
-
MHz
fosc
oscillator frequency
external oscillator (buffer)
-
500
-
MHz
NF
noise figure
at 240 MHz
-
12
-
dB
IP3i
input third-order intercept point
matched f1 = 240.05 MHz;
f2 = 240.35 MHz
-
16
-
dBm
Gp(conv)
conversion power gain
matched 14.5 dBV step-up
8
11
14
dB
Ri(RF)
RF input resistance
single-ended input
-
700
-

Ci(RF)
RF input capacitance
-
3.5
-
pF
Ro(mix)
mixer output resistance
MIXER_OUT pin
-
-
-
Gamp(IF)
IF amplifier gain
330  load
-
38
-
dB
Glim
limiter gain
330  load
-
54
-
dB
Pi(IF)
IF input power
for 3 dB input limiting sensitivity;
test at IF_AMP_IN pin
-
105
-
dBm
AM
AM rejection
80 % AM 1 kHz
-
40
-
dB
Vo(RMS)
RMS output voltage
RL = 100 k
120
130
-
mV
IF section
B3dB
3 dB bandwidth
SINAD
signal-to-noise-and-distortion ratio
THD
total harmonic distortion
S/N
signal-to-noise ratio
no modulation for noise
Vo(RSSI)
RSSI output voltage
IF with buffer
tr(o)
tf(o)
output rise time
output fall time
SA636
Product data sheet
600
700
-
kHz
-
16
-
dB
-
43
38
dB
-
60
-
dB
IF level = 118 dBm
-
0.2
0.5
V
IF level = 68 dBm
0.3
0.6
1.0
V
IF level = 10 dBm
0.9
1.3
1.8
V
RF level = 56 dBm
-
1.2
-
s
RF level = 28 dBm
-
1.1
-
s
RF level = 56 dBm
-
2.0
-
s
RF level = 28 dBm
-
7.3
-
s
RF level = 111 dBm
IF RSSI output; 10 kHz pulse;
no 10.7 MHz filter;
no RSSI bypass capacitor;
IF frequency = 10.7 MHz
IF RSSI output; 10 kHz pulse;
no 10.7 MHz filter;
no RSSI bypass capacitor;
IF frequency = 10.7 MHz
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Rev. 7 — 16 June 2016
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
Table 7.
Dynamic characteristics …continued
Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 240.05 MHz + 14.5 dBV RF input step-up;
IF frequency = 10.7 MHz; RF level = 45 dBm; FM modulation = 1 kHz with 125 kHz peak deviation. Audio output with
C-message weighted filter and de-emphasis capacitor. Test circuit Figure 19. The parameters listed below are tested using
automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance
limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RSSI(range) RSSI range
-
90
-
dB
RSSI
RSSI variation
-
1.5
-
dB
Zi(IF)
IF input impedance
-
330
-

Zo(IF)
IF output impedance
-
330
-

Zi(lim)
limiter input impedance
-
330
-

Zo(lim)
limiter output impedance
-
300
-

Vo(RMS)
RMS output voltage
limiter output level with no load
-
130
-
mV
RF/IF section (internal LO)
Vo(RSSI)
RSSI output voltage
system; RF level = 10 dBm
-
1.4
-
V
SINAD
signal-to-noise-and-distortion ratio
system; RF level = 106 dBm
-
12
-
dB
13. Performance curves
ICC
(mA)
002aag206
9
VCC = 5.0 V
3.3 V
2.7 V
8
002aag223
0.5
ICC(pd)
(mA)
0.4
VCC = 5.0 V
3.3 V
2.7 V
0.3
7
0.2
6
0.1
5
−40
Fig 4.
−15
10
35
Supply current versus ambient temperature
SA636
Product data sheet
0
−40
60
85
Tamb (°C)
Fig 5.
−15
10
35
60
85
Tamb (°C)
Power-down mode supply current versus
ambient temperature
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SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
002aag224
16
Gp(conv)
(dB)
14
002aag225
−7
IP3i
(dBm)
−11
VCC = 5.5 V
3.0 V
2.7 V
12
−15
10
VCC = 5.5 V
3.0 V
2.7 V
8
6
−40
−15
−19
10
35
60
85
Tamb (°C)
−23
−40
RF level = 45 dBm
Fig 6.
−15
10
35
60
85
Tamb (°C)
RF level = 45 dBm
Mixer conversion power gain versus
ambient temperature
Fig 7.
002aag295
300
Mixer input third-order intercept point at
240 MHz versus ambient temperature
002aag296
20
relative
level 0
(dB)
−20
audio reference
(mV)
200
audio
AM rejection
−40
distortion
−60
VCC = 5.5 V
3.0 V
2.7 V
100
noise
−80
−100
0
−40
−15
10
35
60
85
Tamb (°C)
12 dB SINAD
−120
−40
−15
10
35
60
85
Tamb (°C)
VCC = 3 V; RF = 240 MHz; level = 68 dBm;
deviation = 125 kHz
Fig 8.
Audio reference level versus
ambient temperature
Fig 9.
002aag300
2.0
Vo(RSSI)
(V)
1.6
Vo(RSSI)
(V)
1.6
0.8
0.4
0.4
−90
SA636
Product data sheet
−70
−50
Tamb = −40 °C
25 °C
85 °C
1.2
0.8
0
−110
002aag301
2.0
Tamb = −40 °C
25 °C
85 °C
1.2
12 dB SINAD and relative audio, THD, noise,
and AM rejection versus ambient temperature
−30
−10 0
IF level (dBm)
0
−110
−90
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Rev. 7 — 16 June 2016
−70
−50
−30
−10 0
RF level (dBm)
© NXP Semiconductors N.V. 2016. All rights reserved.
13 of 31
SA636
NXP Semiconductors
Low voltage high performance mixer FM IF system
Fig 10. RSSI output voltage versus IF level
Fig 11. RSSI output voltage versus RF level
002aag297
10
IF output power
(dBm)
fund product
−30
3rd-order product
−70
−110
−70
−50
−30
−10
RF input level (dBm)
Fig 12. Mixer third-order intercept and compression
10
relative level
(dB)
−10
002aag227
002aag226
10
relative level
(dB)
−10
audio
AM rejection
−30
audio
AM rejection
−30
THD+N
−50
noise
−70
−90
−110
THD+N
−50
−90
−70
noise
−70
−50
−90
−110
−30
−10 0
RF level (dBm)
a. Tamb = 40 C; Vo(aud)RMS = 118 mV
−90
−70
−50
−30
−10 0
RF level (dBm)
b. Tamb = 25 C; Vo(aud)RMS = 129 mV
002aag228
10
relative level
(dB)
−10
audio
AM rejection
−30
−50
THD+N
noise
−70
−90
−110
−90
−70
−50
−30
−10 0
RF level (dBm)
c. Tamb = 85 C; Vo(aud)RMS = 131 mV
Fig 13. Relative level of audio, AM rejection, THD+N and noise versus RF level
SA636
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Low voltage high performance mixer FM IF system
002aag298
0.8
data level
(V(p-p))
0.6
0.8
data level
(V(p-p))
0.6
VCC = 5.5 V
3.0 V
2.7 V
0.4
0.4
0.2
0.2
0
−40
−15
10
35
0
−40
60
85
Tamb (°C)
a. 600 kHz data rate
002aag299
VCC = 5.5 V
3.0 V
2.7 V
−15
10
35
60
85
Tamb (°C)
b. 1 kHz data rate
IF = 9.85 MHz; deviation = 288 kHz; RF = 40 dBm
Fig 14. Data level versus ambient temperature
14. Application information
SMA
RF input
J1
C1
5 pF to 30 pF
L4
680 nH
110.592 MHz
± 288 kHz
L1
180 nH
U1
RF_IN
C2
10 nF
SMA
LO input
J2
C4
1 nF
120.392 MHz
at −10 dBm
RF_IN_DECOUPL
OSC_OUT
C3
1 nF
OSC_IN
VCC
R1
51 Ω
RSSI_FEEDBACK
RSSI_OUT
R3
22 kΩ
+3 V
VCC
GND
J3
R4
33 kΩ
R2
10 Ω
C5
15 μF
C6
100 nF
POWER_DOWN_CTRL
DATA_OUT
QUADRATURE_IN
20
1
19
2
3
18
4
17
5
SA636DK/01
16
6
15
7
14
8
13
9
12
10
11
C7
470 pF
DATA OUT
R5
1.2 kΩ
C8
5 pF to
30 pF
C9
82 pF
L2
2.2 μH
C21
330 pF
C19
IF_AMP_DECOUPL 1 nF
C18
68 pF
C17
1 nF
IF_AMP_IN
IF_AMP_DECOUPL
IF_AMP_OUT
C16
100 pF
GND
LIMITER_IN
C13
100 pF
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_OUT
C10
15 pF
RSSI
PWR DWN
MIXER_OUT
C20
68 pF
C11
1 nF
C12
1 nF
C14
47 pF
C15
330 pF
L3
680 nH
R6
560 Ω
002aag302
Fig 15. SA636 110.592 MHz (RF), 9.8 MHz (IF) DECT application circuit
SA636
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Low voltage high performance mixer FM IF system
Table 8.
DECT application circuit electrical characteristics
RF frequency = 110.592 MHz; IF frequency = 9.8 MHz; RF level = 45 dBm; FM modulation = 100 kHz with 288 kHz peak
deviation.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
13
-
dB
Mixer/oscillator section (external LO = 160 mV RMS value)
Gp(conv)
conversion power gain
NF
noise figure
at 110 MHz
-
12
-
dB
IP3i
input third-order intercept point
matched f1 = 110.592 MHz;
f2 = 110.892 MHz
-
15
-
dBm
Ri(RF)
RF input resistance
-
690
-

Ci(RF)
RF input capacitance
-
3.6
-
pF
IF section
Gamp(IF)
IF amplifier gain
330  load
-
38
-
dB
Glim
limiter gain
330  load
-
54
-
dB
Vo(RMS)
RMS output voltage
RL = 3 k
-
130
-
mV
B3dB
3 dB bandwidth
-
700
-
kHz
RF/IF section (internal LO)
Vo(RSSI)
RSSI output voltage
system; RF level = 10 dBm
-
1.4
-
V
S/N
signal-to-noise ratio
system; RF level = 83 dBm
-
10
-
dB
SA636
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Low voltage high performance mixer FM IF system
RF IN
C1
5-30 pF
10 nF
C4
R1
1 nF
1 nF
51 Ω
180
nH
C3
C6 100 nF
L4
680
nH
470 pF C7
R5
1.2 kΩ
SA636DK
82 pF
C20
C9
15 pF C10
68 pF
C18
1 nF C11
68 pF
C12
1 nF
C2
C21
330 pF C19
1 nF C17
C16
1 nF C13
100 pF
L1
2.2 μH
L2
V
R
P
D
47 pF
R2 R4 R3
C5
C14 330 pF
C15 560 Ω
R6
L3
22 kΩ
10 Ω
33 kΩ
15 μF
100 pF
680
nH
LO IN
C8 5-30 pF
002aag362
a. Top silk screen
002aag363
b. Top view
002aag364
c. Bottom view
Remark: Not actual size.
Fig 16. SA636 demo board layout (SSOP20)
SA636
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Low voltage high performance mixer FM IF system
RF INPUT
240 MHz
X1
SA636BS
founded by Philips
C3
L2
C1
IF = 10.7 MHz
L3
C17
P20
X2
FLT1
C6
P16
RF INPUT
229.3 MHz
C7
C8
SA636BS
C4
P1
P15
P5
P11
FLT2
P10
P6
U$1
C9
C15
C10
C19
C14
C1A
R1A
GND
AUDIO_DC
AUDIO
RSSI
PD_CTL
VCC
C5
R19
C2
C18
L1
JP3
002aah532
Fig 17. SA636BS demo board (HVQFN20)
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Low voltage high performance mixer FM IF system
FLT1
10.7 MHz filter
1 2 3
OSC_IN
VCC
AUDIO_FEEDBACK
RSSI_OUT
6
5
4
3
2
1
JP3
C2
6.8 μF
4.7 nF
16
IF_AMP_IN
IF_AMP_DECOUPL
SA636BS
3
13
4
12
5
11
DATA_OUT
AUDIO
AUDIO_DC
GND
C1A
17
14
POWER_DOWN
VCC
RSSI
18
20
2
6
C5
GND 0.1 μF
15
R1A
820 Ω
GND
IF_AMP_DECOUPL
C17
0.1 μF
IF_AMP_OUT
GND
GND
LIMITER_IN
GND
LIMITER_DECOUPL
10
L3
47 nH
1
9
C9
39 pF
OSC_OUT
LIMITER_OUT
LO input
229.3 MHz
RF_IN_DECOUPL
C4
1 nF
7
C8
5 pF to 30 pF trim
X2
BU-SMA-H
19
C3
1 nF
RF_IN
GND
MIXER_OUT
L2
33 nH
C7
22 pF
8
GND
C1
0.1 μF
QUADRATURE_IN
RF input
240 MHz
GND
C6
5 pF to 30 pF trim
X1
BU-SMA-H
LIMITER_
DECOUPL
1
2
3
FLT2
10.7 MHz filter
C15
0.1 μF
C10
0.1 μF
C18
4.7 pF
GND
3
1
C19
39 pF
3
L1
5.6 μH
2
4
C14
100 nF
GND
R19
12 kΩ
GND
GND
002aah533
Fig 18. SA636BS schematic (HVQFN20)
SA636
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Low voltage high performance mixer FM IF system
15. Test information
MIXER
IF/LIM_OUT
IF/LIM_IN
R11
R4
C11
2
C16
R2
C12
L5
R9
C20
R7
R6
R3
R8
R5
1
1
19
C17
FL2
2
2
C13
20
R10
C14
FL1
1
1
2
S5
C15
18
C18
17
16
15
14
13
IF amp
RSSI
3
C3
4
C21
PWR
DWN
VCC
C1
11
quad
OSC
2
12
limiter
mixer
1
C19
5
6
7
C4
8
data
9
10
C8
C6
L1
C2
L3
FL3
C5
C9
C7
R1
L4
FL4
L2
VCC
LO_IN
C10
RF_IN
RSSI_OUT
POWER_DOWN_CTRL
DATA_OUT
002aag360
The layout is very critical in the performance of the receiver. We highly recommend our
demo board layout.
All of the inductors, the quad tank, and their shield must be grounded. A 0.1 F bypass capacitor
on the supply pin improves sensitivity.
For the HVQFN20 package, the die attach paddle must be connected to the ground of PCB.
Fig 19. 240.05 MHz (RF) / 10.7 MHz (IF) test circuit
SA636
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Low voltage high performance mixer FM IF system
Table 9.
Component
Description
R1
7.5 k resistor; select
R2, R7
6.49 k resistor
R3, R8
347.8  resistor
R4, R6, R9, R11
49.9  resistor
R5, R10
1 k resistor
R12, R14
60.4  resistor
R13
249  resistor
C1, C4
10 nF capacitor
C2
5.6 pF capacitor; select for input match
C3, C10, C11, C14,
C16, C17, C20, C22
0.1 F capacitor
C5
5 pF to 300 pF variable capacitor; Murata TZC3P300A 110R00
C6
100 pF capacitor
C7
15 F, 20 V capacitor[1]
C8
1 F capacitor
C9
39 pF capacitor; select
C10, C13, C15, C18,
C19
1000 pF capacitor
C12
150 pF capacitor; select
C21
2.7 pF capacitor
L2
27 nH inductor[1]; Coilcraft 1008HT-27NT or Garret PM20-RO27;
select for input match
L3
39 nH inductor; Coilcraft 1008HQ-39NX; select for input match
L4
5.6 H variable, shielded inductor, 5 mm SMD; Toko 613BN-9056Z;
select for input match
L5
1.27 H to 2.25 H variable shielded inductor; 5 mm SMD; select for
mixer output match
FL1, FL2
10.7 MHz filter (Murata SFE10.7MA5-A)
FL3
‘C’ message weighted filter
FL4
active de-emphasis filter
[1]
SA636
Product data sheet
Automatic test circuit component list
This value can be reduced when a battery is the power source.
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SA636
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Low voltage high performance mixer FM IF system
RF GENERATOR(1)
110.592 MHz
SA636 DEMOBOARD(2)
RSSI
DATA
LO / GENERATOR
120.392 MHz
VCC (+3 V)
DC VOLTMETER
SCOPE
SPECTRUM
ANALYZER
002aag361
(1) Set your RF generator at 110.592 MHz; use a 100 kHz modulation frequency and a 288 kHz
deviation.
(2) The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a
measure of the quality of the layout and design. If the lowest RSSI voltage is 500 mV or higher, it
means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than
expected.
Fig 20. Application circuit test setup
SA636
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Low voltage high performance mixer FM IF system
16. Package outline
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10 o
o
0
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT266-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
MO-152
Fig 21. Package outline SOT266-1 (SSOP20)
SA636
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Low voltage high performance mixer FM IF system
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 4 x 4 x 0.85 mm
B
D
SOT917-1
A
terminal 1
index area
A
E
A1
c
detail X
C
e1
e
b
6
10
y
y1 C
v M C A B
w M C
L
11
5
e
Eh
e2
1
15
terminal 1
index area
20
16
Dh
X
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max.
A1
b
c
D(1)
Dh
E(1)
Eh
e
e1
e2
L
v
w
y
y1
mm
1
0.05
0.00
0.30
0.18
0.2
4.1
3.9
2.45
2.15
4.1
3.9
2.45
2.15
0.5
2
2
0.6
0.4
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT917 -1
---
MO-220
---
EUROPEAN
PROJECTION
ISSUE DATE
05-10-08
05-10-31
Fig 22. Package outline SOT917-1 (HVQFN20)
SA636
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Low voltage high performance mixer FM IF system
17. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
17.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
17.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
17.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
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Low voltage high performance mixer FM IF system
17.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 23) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 10 and 11
Table 10.
SnPb eutectic process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
 350
< 2.5
235
220
 2.5
220
220
Table 11.
Lead-free process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 23.
SA636
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Low voltage high performance mixer FM IF system
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 23. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
18. Abbreviations
Table 12.
SA636
Product data sheet
Abbreviations
Acronym
Description
AMPS
Advanced Mobile Phone System
ASK
Amplitude Shift Keying
BER
Bit Error Rate
CDM
Charged-Device Model
CMOS
Complementary Metal-Oxide Semiconductor
DECT
Digital European Cordless Telephone
ESD
ElectroStatic Discharge
FM
Frequency Modulation
FSK
Frequency Shift Keying
HBM
Human Body Model
IF
Intermediate Frequency
LAN
Local Area Network
LC
inductor-capacitor filter
RCR
Research and development Center for Radio systems
RF
Radio Frequency
RSSI
Received Signal Strength Indicator
SINAD
Signal-to-Noise And Distortion ratio
SMD
Surface Mount Device
TACS
Total Access Communication System
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Low voltage high performance mixer FM IF system
Table 12.
Abbreviations …continued
Acronym
Description
TTL
Transistor-Transistor Logic
UHF
Ultra High Frequency
VHF
Very High Frequency
19. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
SA636 v.7
20160616
Product data sheet
-
SA636 v.6
Modifications:
SA636 v.6
Modifications:
•
Figure 2 “Pin configuration for SSOP20”: Corrected pin assignments for OSC_IN and OSC_OUT;
no change to device.
20121205
•
Product data sheet
-
SA636 v.5
Table 2 “Pin description”:
– appended “connect to ground” to description of DAP (HVQFN20)
– Table note [1]: first sentence is re-written
•
Figure 19 “240.05 MHz (RF) / 10.7 MHz (IF) test circuit”: added 3rd paragraph (just above
figure title)
•
•
Added Figure 17 “SA636BS demo board (HVQFN20)”
Added Figure 18 “SA636BS schematic (HVQFN20)”
SA636 v.5
20120724
Product data sheet
-
SA636 v.4
SA636 v.4
20110909
Product data sheet
-
SA636 v.3
SA636 v.3
20030801
Product data
ECN 853-1757 30101 SA636 v.2
dated 15 Jul 2003
SA636 v.2
19971107
Product data
ECN 853-1757 18664 SA636 v.1
dated 07 Nov 1997
SA636 v.1
19940616
Product specification
ECN 853-1757 13150 dated 07 Nov 1997
SA636
Product data sheet
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Low voltage high performance mixer FM IF system
20. Legal information
20.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
20.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
20.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 16 June 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
20.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
21. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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All information provided in this document is subject to legal disclaimers.
Rev. 7 — 16 June 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
30 of 31
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22. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
14
15
16
17
17.1
17.2
17.3
17.4
18
19
20
20.1
20.2
20.3
20.4
21
22
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
Functional description . . . . . . . . . . . . . . . . . . . 6
Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 7
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal characteristics . . . . . . . . . . . . . . . . . 10
Static characteristics. . . . . . . . . . . . . . . . . . . . 10
Dynamic characteristics . . . . . . . . . . . . . . . . . 11
Performance curves . . . . . . . . . . . . . . . . . . . . 12
Application information. . . . . . . . . . . . . . . . . . 15
Test information . . . . . . . . . . . . . . . . . . . . . . . . 20
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 23
Soldering of SMD packages . . . . . . . . . . . . . . 25
Introduction to soldering . . . . . . . . . . . . . . . . . 25
Wave and reflow soldering . . . . . . . . . . . . . . . 25
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 25
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 26
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 28
Legal information. . . . . . . . . . . . . . . . . . . . . . . 29
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 29
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Contact information. . . . . . . . . . . . . . . . . . . . . 30
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2016.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 June 2016
Document identifier: SA636