Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MW6S004N
Rev. 4, 6/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MW6S004NT1
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — - 34 dBc
• Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — - 39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
1 - 2000 MHz, 4 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD 1.5
PLASTIC
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two - Tone
Case Temperature 79°C, 4 W CW
RθJC
°C/W
8.8
8.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S004NT1
1
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 mAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 50 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 50 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3
4.2
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 50 mAdc)
VDS(on)
—
0.27
0.37
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
21
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
25
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
30
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two - Tone Test
Power Gain
Drain Efficiency
Gps
16.5
18
20
dB
ηD
28
33
—
%
Intermodulation Distortion
IMD
—
- 34
- 28
dBc
Input Return Loss
IRL
—
- 12
- 10
dB
Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP,
f = 900 MHz, Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
33
—
%
Intermodulation Distortion
IMD
—
- 39
—
dBc
Input Return Loss
IRL
—
- 12
—
dB
11/
1. VGG = 10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
MW6S004NT1
2
RF Device Data
Freescale Semiconductor
R1
VSUPPLY
VBIAS
+
R2
C8
C1
Z5
C7
C3
C4
C5
Z10
RF
INPUT
R3
Z1
Z2
Z3
Z6
0.054″
0.054″
0.580″
0.580″
0.025″
0.210″
Z8
Z4
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
RF
OUTPUT
C6
DUT
x 0.430″
x 0.137″
x 0.420″
x 0.100″
x 0.680″
x 0.100″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
PCB
0.210″ x 1.220″ Microstrip
0.054″ x 0.680″ Microstrip
0.054″ x 0.260″ Microstrip
0.025″ x 0.930″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.020″, εr = 2.5
Figure 1. MW6S004NT1 Test Circuit Schematic
Table 6. MW6S004NT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C3, C6, C7
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C4, C5
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C8
10 μF, 35 V Tantalum Chip Capacitor
T490D106K035AT
Kemet
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MW6S004NT1
RF Device Data
Freescale Semiconductor
3
25
C8
R1
R2
C1
C7
C3
R3
C2
C4
C5
C6
MW6S004N
Rev 3
Figure 2. MW6S004NT1 Test Circuit Component Layout
MW6S004NT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
33
ηD
32
Gps, POWER GAIN (dB)
18
17.8
31
Gps
17.6
30
VDD = 28 Vdc, Pout = 2 W (Avg.)
IDQ = 50 mA, 100 kHz Tone Spacing
17.4
17.2
IRL
17
−30
−8
−31
−12
−32
−33
16.8
16.6
IM3
16.4
1930
1940
1950
1960
1970
1980
−16
−20
−34
−24
−35
1990
−28
IRL, INPUT RETURN LOSS (dB)
18.2
ηD, DRAIN
EFFICIENCY (%)
34
IM3 (dBc)
18.4
f, FREQUENCY (MHz)
20
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Two - Tone Wideband Performance
@ Pout = 2 Watts Avg.
IDQ = 75 mA
62.5 mA
18
17
50 mA
37.5 mA
16
25 mA
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
15
IMD, INTERMODULATION DISTORTION (dBc)
14
0.01
1
0.1
10
−30
−40
3rd Order
−50
−60
5th Order
−70
7th Order
−80
0.01
20
0.1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
47
P6dB = 38.73 dBm (7.465 W)
VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA
(f1 + f2)/2 = Center Frequency of 1960 MHz
3rd Order
−40
−45
5th Order
−50
Ideal
45
−35
−55
P3dB = 38.22 dBm (6.637 W)
43
41
P1dB = 37.61 dBm (5.768 W)
39
Actual
37
VDD = 28 Vdc, IDQ = 50 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
35
7th Order
−60
0.1
1
Pout, OUTPUT POWER (WATTS) PEP
−25
−30
VDD = 28 Vdc, IDQ = 50 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
−20
Pout, OUTPUT POWER (dBm)
Gps, POWER GAIN (dB)
19
−10
33
1
10
100
14
16
18
20
22
24
26
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulsed CW Output Power versus
Input Power
MW6S004NT1
RF Device Data
Freescale Semiconductor
5
50
40
−20
VDD = 28 Vdc, IDQ = 50 mA
f = 1960 MHz, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
−30
30
−40
Gps
20
−50
ACPR
10
ACPR (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
−60
ηD
0
−70
0.01
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
20
60
Gps
50
25_C
85_C
18
40
85_C
17
16
15
30
VDD = 28 Vdc
IDQ = 50 mA
f = 1960 MHz
20
ηD
ηD, DRAIN EFFICIENCY (%)
TC = −30_C
19
Gps, POWER GAIN (dB)
−30_C
10
14
0.01
0
1
0.1
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
19
IDQ = 50 mA
f = 1960 MHz
0
20
−5
18
17
16.5
S21
18
−15
16
16
VDD = 28 Vdc
Pout = 2 W CW
IDQ = 50 mA
14
15.5
VDD = 24 V
0
1
2
3
4
5
32 V
28 V
15
6
7
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
8
−10
12
1800
1850
S11 (dB)
17.5
S21 (dB)
Gps, POWER GAIN (dB)
18.5
22
−20
S11
1900
1950
2000
2050
−25
2100
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
MW6S004NT1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 4 W PEP, and ηD = 33%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
MW6S004NT1
RF Device Data
Freescale Semiconductor
7
f = 1990 MHz
Zload
Zo = 10 Ω
f = 1930 MHz
f = 1990 MHz
Zsource
f = 1930 MHz
VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
f
MHz
Zsource
W
Zload
W
1930
1.96 - j5.34
8.78 + j6.96
1960
1.89 - j5.10
8.93 + j7.46
1990
1.82 - j4.85
9.11 + j7.97
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MW6S004NT1
8
RF Device Data
Freescale Semiconductor
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system)
IDQ = 50 mA
f
MHz
MH
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
500
0.649
- 116.340
7.902
105.420
0.056
- 73.750
0.548
- 33.570
550
0.695
- 121.680
7.502
98.790
0.053
- 80.570
0.593
- 41.480
600
0.733
- 126.560
7.111
92.380
0.049
- 87.010
0.632
- 48.890
650
0.770
- 131.340
6.699
86.290
0.045
- 93.280
0.669
- 56.000
700
0.800
- 135.740
6.302
80.450
0.041
- 99.120
0.701
- 62.810
750
0.827
- 140.030
5.922
74.850
0.038
- 104.850
0.727
- 69.290
800
0.848
- 143.950
5.552
69.630
0.035
- 110.110
0.750
- 75.350
850
0.866
- 147.690
5.220
64.580
0.032
- 115.220
0.770
- 81.130
900
0.882
- 151.140
4.891
59.970
0.029
- 119.960
0.786
- 86.570
950
0.895
- 154.560
4.597
55.490
0.026
- 124.790
0.800
- 91.730
1000
0.907
- 157.590
4.315
51.240
0.024
- 129.090
0.813
- 96.660
1050
0.916
- 160.540
4.060
47.170
0.022
- 133.370
0.824
- 101.340
1100
0.923
- 163.310
3.819
43.340
0.020
- 137.460
0.833
- 105.790
1150
0.929
- 165.930
3.601
39.650
0.018
- 141.440
0.840
- 110.050
1200
0.935
- 168.430
3.398
36.110
0.017
- 145.330
0.847
- 114.170
1250
0.938
- 170.770
3.210
32.740
0.015
- 149.540
0.851
- 118.060
1300
0.942
- 173.030
3.036
29.490
0.014
- 153.430
0.856
- 121.880
1350
0.945
- 175.140
2.875
26.360
0.013
- 157.460
0.859
- 125.520
1400
0.948
- 177.170
2.728
23.330
0.012
- 161.910
0.863
- 129.020
1450
0.951
- 179.090
2.590
20.440
0.011
- 166.180
0.866
- 132.390
1500
0.953
179.030
2.464
17.640
0.010
- 170.630
0.869
- 135.650
1550
0.954
177.270
2.347
14.920
0.009
- 174.890
0.872
- 138.760
1600
0.955
175.570
2.240
12.320
0.008
179.950
0.875
- 141.750
1650
0.956
173.980
2.139
9.740
0.008
173.920
0.877
- 144.650
1700
0.957
172.350
2.047
7.250
0.007
167.710
0.880
- 147.480
1750
0.957
170.800
1.958
4.810
0.007
161.810
0.882
- 150.180
1800
0.958
169.340
1.879
2.440
0.006
155.370
0.884
- 152.760
1850
0.959
167.920
1.806
0.260
0.006
148.940
0.886
- 155.230
1900
0.959
166.510
1.736
- 1.980
0.005
142.630
0.887
- 157.580
1950
0.960
165.200
1.668
- 4.310
0.005
136.740
0.888
- 160.050
2000
0.959
163.800
1.611
- 6.240
0.005
129.910
0.890
- 162.070
2050
0.959
162.420
1.555
- 8.290
0.005
123.810
0.891
- 164.190
2100
0.958
161.170
1.504
- 10.270
0.005
118.200
0.892
- 166.140
2150
0.958
159.840
1.456
- 12.210
0.005
112.740
0.893
- 168.060
2200
0.957
158.560
1.412
- 14.130
0.005
108.460
0.894
- 169.840
2250
0.957
157.160
1.372
- 16.010
0.005
103.840
0.896
- 171.610
2300
0.955
155.870
1.334
- 17.870
0.005
99.310
0.896
- 173.260
2350
0.954
154.510
1.300
- 19.700
0.005
95.360
0.897
- 174.830
2400
0.953
153.120
1.268
- 21.510
0.005
91.030
0.898
- 176.390
2450
0.953
151.730
1.238
- 23.250
0.005
87.460
0.899
- 177.840
MW6S004NT1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) (continued)
IDQ = 50 mA
f
MHz
MH
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2500
0.952
150.340
1.211
- 25.120
0.006
84.160
0.899
- 179.270
2550
0.950
149.010
1.187
- 26.920
0.006
80.780
0.897
179.420
2600
0.949
147.380
1.166
- 28.650
0.006
77.880
0.897
178.120
2650
0.948
145.920
1.144
- 30.420
0.007
74.670
0.898
176.840
2700
0.944
144.200
1.121
- 32.310
0.007
71.360
0.896
175.480
2750
0.944
142.790
1.105
- 34.230
0.007
67.980
0.897
174.060
2800
0.943
141.020
1.088
- 36.000
0.007
63.950
0.897
172.930
2850
0.941
139.410
1.073
- 37.870
0.007
61.230
0.896
171.630
2900
0.940
137.640
1.058
- 39.760
0.008
59.810
0.896
170.330
2950
0.938
135.900
1.045
- 41.680
0.008
58.280
0.896
169.040
3000
0.937
133.860
1.032
- 43.610
0.008
56.740
0.895
167.510
MW6S004NT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
A
F
3
B
D
1
2
R
L
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
4
N
K
0.35 (0.89) X 45_" 5 _
Q
10_DRAFT
U
H
ZONE V
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉÉ
4
ZONE W
C
Y
Y
2
1
3
G
P
S
STYLE 1:
PIN 1.
2.
3.
4.
ZONE X
VIEW Y - Y
DRAIN
GATE
SOURCE
SOURCE
E
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
CASE 466 - 03
ISSUE D
PLD 1.5
PLASTIC
MW6S004NT1
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Feb. 2007
Description
• Corrected MSL Rating from 3 to 1 in Table 4, Moisture Sensitivity Level, p. 2
• Updated VGS(th) and VGS(Q) to reflect tighter HV6 windows and added Fixture Gate Quiescent VGG(Q) to On
Characteristics table to account for test fixture resistor divider network, p. 2
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History section, p. 12
3
Apr. 2009
• Corrected ESD structures to reflect current testing results. Changed HBM from 1A to 1C and CDM from III
to IV, p. 1
• Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
4
June 2009
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 12
MW6S004NT1
12
RF Device Data
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MW6S004NT1
Document
Number:
RF
Device
Data MW6S004N
Rev. 4, 6/2009
Freescale
Semiconductor
13