Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9060N
Rev. 1, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRFE6S9060NR1
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.1 dB
Drain Efficiency — 33%
ACPR @ 750 kHz Offset — - 45.7 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 21 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts,
Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, + 12
Vdc
Maximum Operation Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 78°C, 14 W CW
RθJC
0.77
0.88
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.05
0.27
0.4
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.1
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
33
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
109
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Gps
20
21.1
23
dB
Drain Efficiency
ηD
30.5
33
—
%
ACPR
—
- 45.7
- 44
dBc
IRL
—
- 18
-9
Adjacent Channel Power Ratio
Input Return Loss
dB
(continued)
MRFE6S9060NR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc,
IDQ = 500 mA, Pout = 21 W Avg., f = 920 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA,
Pout = 60 W, f = 920 - 960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
63
—
%
IRL
—
- 12
—
dB
P1dB
—
67
—
W
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 60 W PEP Pout where IM3 = - 30 dBc
VBW
(Tone Spacing from 100 kHz to VBW)
—
3
—
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 14 W Avg.
GF
—
0.27
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.011
—
dB/°C
ΔP1dB
—
0.088
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
3
B2
B1
R4
R1
VBIAS
+
+
C9
RF
INPUT
C15
R3
R2
C7
C8
Z2
Z3
Z4
Z5
L1
Z6
+
+
C16
C17
C19
C11 L2
Z10
Z1
+
Z7
Z8
Z11
Z12
Z13
C10
C1
C12
C13
C18
RF
Z15 OUTPUT
Z14
C6 Z9
VSUPPLY
C14
DUT
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.215″
0.221″
0.500″
0.460″
0.040″
0.280″
0.087″
0.435″
C3
x 0.065″
x 0.065″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.525″
x 0.525″
C4
C5
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.530″ Taper
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.057″ x 0.525″ Microstrip
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.170″ x 0.065″ Microstrip
0.880″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
Taconic RF - 35 0.030″, εr = 3.5
Figure 1. MRFE6S9060NR1 Test Circuit Schematic
Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair Rite
B2
Ferrite Bead
274021447
Fair Rite
C1, C8, C14, C15
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C4, C13
0.8 - 8.0 pF Variable Capacitors, Gigatrim
2729152
Johanson
C3
3.0 pF Chip Capacitor
ATC100B3R0JT500XT
ATC
C5, C6
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C7, C16, C17
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
Kemet
C9
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB - 1017 - RH
Multicomp
C10, C11
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C12
4.3 pF Chip Capacitor
ATC100B4R3JT500XT
ATC
C18
0.56 μF Chip Capacitor
ATC700A561MT150XT
ATC
C19
470 μF, 63 V Electrolytic Capacitor
EKME630ELL471MK255
Multicomp
L1, L2
12.5 nH Inductor
A04T - 5
Coilcraft
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
R4
27 W, 1/4 W Chip Resistor
CRCW120627R0FKEA
Vishay
MRFE6S9060NR1
4
RF Device Data
Freescale Semiconductor
C7
VGG
R2
R1
C19
B1
R3
C8
C15
C9
C2
C3
C5
R4
C18
L2
CUT OUT AREA
C6
L1
C1
VDD
C16 C17
B2
C11
C10
C12
C13
C14
C4
TO−270/272
Surface /
Bolt down
Figure 2. MRFE6S9060NR1 Test Circuit Component Layout
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
5
ηD
30
Gps
19
20
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 450 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
18
IRL
17
−30
−40
ACPR
16
15
−50
−60
ALT1
14
820
0
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
20
840
860
880
900
920
940
960
−70
980
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
40
21
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
ηD
50
Gps
18
40
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 450 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
17
IRL
16
−20
−30
ACPR
15
−40
14
−50
ALT1
13
820
840
860
880
900
920
940
960
−60
980
0
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
19
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
60
20
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 14 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ Pout = 28 Watts Avg.
21
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 675 mA
550 mA
Gps, POWER GAIN (dB)
20
450 mA
350 mA
19
225 mA
18
17
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
16
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
IDQ = 225 mA
−40
350 mA
−50
675 mA
450 mA
550 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9060NR1
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 450 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
−40
−50
3rd Order
−60
5th Order
−70
7th Order
−80
1
100
10
200
0
VDD = 28 Vdc, Pout = 60 W (PEP)
IDQ = 450 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
−30
IM3−U
IM3−L
−40
IM5−U
IM5−L
−50
IM7−U
IM7−L
−60
−70
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
80
58
Pout, OUTPUT POWER (dBm)
Ideal
P6dB = 51.31 dBm (135.21 W)
57
56
55
P3dB = 50.39 dBm (109.4 W)
54
53
P1dB = 49.41 dBm
(87.3 W)
52
51
Actual
50
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 12 μsec(on)
1% Duty Cycle, f = 880 MHz
49
48
27
28
29
30
31
32
33
34
35
36
37
Pin, INPUT POWER (dBm)
65
60
55
50
45
40
35
30
25
20
15
10
5
0
VDD = 28 Vdc, IDQ = 450 mA
f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
ACPR
Gps
ηD
ALT1
1
10
−15
−20
−25
25_C
−30
85_C
−35
−30_C
−40
25_C
−45
−30_C
85_C −50
−55
−30_C −60
−65
85_C
−70
25_C
−75
−80
100
TC = −30_C
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
TC = −30_C
Gps
25_C
70
60
20
85_C
19
25_C
50
85_C
18
40
17
30
16
20
VDD = 28 Vdc
IDQ = 450 mA
f = 880 MHz
ηD
15
1
10
19
18
28 V
32 V
VDD = 24 V
0
200
100
20
17
10
14
IDQ = 450 mA
f = 880 MHz
21
Gps, POWER GAIN (dB)
−30_C
ηD, DRAIN EFFICIENCY (%)
21
Gps, POWER GAIN (dB)
22
80
22
16
0
20
40
60
80
100
120
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
140
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9060NR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
..
..
.
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
... .
...............
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... −ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
...........
......
..........
......
...
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
f = 910 MHz
f = 910 MHz
Zload
Zsource
f = 850 MHz
f = 850 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.44 - j0.20
2.28 + j0.23
865
0.44 - j0.07
2.18 + j0.33
880
0.45 + j0.50
2.20 + j0.47
895
0.48 + j0.18
2.15 + j0.61
910
0.52 + j0.29
2.00 + j0.68
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9060NR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
11
MRFE6S9060NR1
12
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2007
• Initial Release of Data Sheet
1
Oct. 2007
• Added Min value to VDS(on), On Characteristics table, p. 2
MRFE6S9060NR1
14
RF Device Data
Freescale Semiconductor
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could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2007. All rights reserved.
MRFE6S9060NR1
Document
Number:
RF
Device
Data MRFE6S9060N
Rev. 1, 10/2007
Freescale
Semiconductor
15