Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT27S010N
Rev. 3, 12/2015
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 1.26 W RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 728 to 3600 MHz.
AFT27S010NT1
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
2100 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
21.6
23.2
9.1
--42.0
--11
2140 MHz
21.8
23.0
9.0
--41.5
--15
2170 MHz
21.7
22.6
8.7
--41.7
--15
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz
21.2
23.6
9.0
--40.9
--10
2350 MHz
21.6
22.6
8.6
--40.0
--22
2400 MHz
20.7
21.0
8.3
--40.1
--9
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2500 MHz
19.6
22.0
9.8
--44.8
--7
2600 MHz
21.0
22.7
9.4
--41.4
--15
2700 MHz
19.6
21.2
8.9
--39.7
--5
728–3600 MHz, 1.26 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
2300 MHz
PLD--1.5W
PLASTIC
2600 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
700 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz
24.3
25.5
9.3
--44.0
--12
748 MHz
24.3
24.7
9.4
--43.9
--12
768 MHz
24.3
23.8
9.5
--43.6
--12
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz
14.7
15.8
9.0
--44.9
--7
3500 MHz
16.0
16.8
9.0
--44.9
--8
3600 MHz
15.0
17.4
8.6
--44.2
--4
RFin/VGS
RFout/VDS
(Top View)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
Figure 1. Pin Connections
3500 MHz
1. All data measured in fixture with device soldered to heatsink.
Features
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Universal Broadband Driven Device with Internal RF Feedback
 Freescale Semiconductor, Inc., 2013–2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
(1,2)
TJ
--40 to +150
C
Characteristic
Symbol
Value (2,3)
Unit
RJC
3.5
C/W
Operating Junction Temperature Range
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 77C, 1.3 W CW, 28 Vdc, IDQ = 90 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 12.1 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test)
VGS(Q)
1.5
1.8
2.3
Vdc
Drain--Source On--Voltage
(VGS = 6 Vdc, ID = 121 mAdc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT27S010NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., f = 2170 MHz, Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset.
Power Gain
Gps
20.0
21.7
—
dB
Drain Efficiency
D
18.5
21.5
—
%
ACPR
—
--40.6
--37.9
dBc
IRL
—
--14
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 90 mA, f = 2140 MHz
VSWR 5:1 at 32 Vdc, 13.9 W CW Output Power
(3 dB Input Overdrive from 10 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 90 mA, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
10
—
W

—
--12.6
—

VBWres
—
120
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 1.26 W Avg.
GF
—
0.20
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.011
—
dB/C
P1dB
—
0.004
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz frequency range.)
VBW Resonance Point
(IMD Seventh Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C)
Table 6. Ordering Information
Device
AFT27S010NT1
Tape and Reel Information
T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel
Package
PLD--1.5W
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
3
VGG
VDD
C7
C13
C6
C12
C8
R1
C1*
Q1
C2
C5*
C4
C3
C9
AFT27S010N
Rev. 2
2100MHz
C10
C11
D53402
VDD
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2170 MHz
Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2170 MHz
Part
Description
Part Number
Manufacturer
C1, C5, C6, C8, C9
9.1 pF Chip Capacitors
ATC100B9R1JT500XT
ATC
C2
1.1 pF Chip Capacitor
ATC100B1R1JT500XT
ATC
C3
2.0 pF Chip Capacitor
ATC100B2R0JT500XT
ATC
C4
1.0 pF Chip Capacitor
ATC100B1R0JT500XT
ATC
C7, C10, C11, C12, C13
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
Q1
RF Power LDMOS Transistor
AFT27S010NT1
Freescale
R1
2.37  Chip Resistor
CRCW12062R37FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D53402
MTL
AFT27S010NT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2110--2170 MHz
24
23
VDD = 28 Vdc, Pout = 1.26 W (Avg.)
IDQ = 90 mA, Single--Carrier W--CDMA
22
Gps
21
22
21
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
20
--40
--6
19
--41
--10
18
--42
17
ACPR --43
16
--44
20
IRL
PARC
15
2060
2080
2100
2120
2140
2160
2180
2200
ACPR (dBc)
Gps, POWER GAIN (dB)
23
--14
--18
--22
--45
2220
--26
--0.4
--0.6
--0.8
--1
--1.2
PARC (dB)
24
IRL, INPUT RETURN LOSS (dB)
D
D, DRAIN
EFFICIENCY (%)
25
--1.4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
IM7--U
--50
--60 V = 28 Vdc, P = 7.6 W (PEP), I = 90 mA
DD
out
DQ
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
--70
10
1
IM7--L
100
200
TWO--TONE SPACING (MHz)
22.5
0
22
21.5
21
20.5
20
D
PARC
--1 dB = 1.4 W
--1
--5
--2 dB = 1.9 W
0.5
1
1.5
2
--25
15
VDD = 28 Vdc, IDQ = 90 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
--4
30
20
--3 dB = 2.55 W
ACPR
--3
--20
25
Gps
--2
35
2.5
--30
--35
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
23
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
10
--45
5
--50
3
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio Compression
(PARC) versus Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 2110--2170 MHz
21
2170 MHz 2140 MHz
2110 MHz
20
2170 MHz
2140 MHz
2110 MHz
50
--30
40
30
10
2110 MHz
18
0.1
--25
20
2170 MHz
2140 MHz
19
60
D
0
10
1
--35
--40
--45
ACPR (dBc)
VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
ACPR
23 Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
Gps
22
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
24
--50
--55
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
35
Gain
GAIN (dB)
20
25
15
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 90 mA
18
5
--5
16
IRL
14
12
1950
IRL (dB)
22
1990
2030
2070
2110
2150
--15
2190
2230
--25
2270
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT27S010NT1
6
RF Device Data
Freescale Semiconductor, Inc.
Table 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
5.85 + j3.49
21.0
41.2
13
60.2
--12
0.877 + j0.537
5.79 + j3.28
20.8
41.2
13
59.5
--13
1.26 + j0.455
5.57 + j3.12
20.7
41.1
13
60.1
--11
f
(MHz)
Zsource
()
Zin
()
2110
1.23 -- j0.107
0.698 + j0.572
2140
1.08 -- j0.422
2170
1.12 -- j0.0337
Zload
()
(1)
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
2110
1.23 -- j0.107
0.592 + j0.741
6.75 + j2.96
18.7
42.0
16
59.6
--18
2140
1.08 -- j0.422
0.807 + j0.78
6.62 + j2.72
18.5
42.0
16
58.6
--20
2170
1.12 -- j0.0337
1.25 + j0.806
6.47 + j2.61
18.4
42.0
16
59.8
--17
(W)
D
(%)
AM/PM
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
2110
1.23 -- j0.107
0.609 + j0.446
3.56 + j6.04
22.7
39.7
9
67.5
--20
2140
1.08 -- j0.422
0.736 + j0.434
3.63 + j5.62
22.4
39.9
10
66.6
--21
2170
1.12 -- j0.0337
1.03 + j0.312
3.37 + j5.39
22.5
39.6
9
67.3
--19
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
1.23 -- j0.107
0.512 + j0.627
3.80 + j5.81
20.5
40.5
11
67.3
--29
2140
1.08 -- j0.422
0.671 + j0.667
3.77 + j5.41
20.3
40.6
11
65.9
--31
2170
1.12 -- j0.0337
1.05 + j0.666
3.83 + j5.15
20.2
40.6
12
67.1
--27
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
8
8
37.5
38
IMAGINARY ()
6
40
7
39
40.5
E
5
41
4
P
3
2
E
62
52
60
66
5
58
4
56
P
3
54
2
39.5
38
2
39
3
4
5
6
7
9
8
0
10
52
50
1
1
0
64
6
IMAGINARY ()
7
39.5
38.5
3
2
4
6
5
7
8
9
10
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
8
8
23.5
IMAGINARY ()
22.5
23
6
E
21.5
4
21
P
3
20.5
2
3
4
5
6
7
--18
E
5
--16
4
--24
P
3
--14
1
19.5
2
--22
2
20
1
0
--28
6
22
5
--20
--26
7
IMAGINARY ()
7
8
9
10
0
--12
2
3
4
5
6
7
8
9
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
10
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
8
8
IMAGINARY ()
6
39
40
38.5
39.5
40.5
7
41
41.5
E
5
4
3
P
3
1
1
3
4
5
6
7
9
8
0
10
58
4
2
2
60
62
64
E
5
2
0
54
6
IMAGINARY ()
7
38
P
56
54
52
50
2
3
4
6
5
7
8
9
10
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
8
8
21.5
IMAGINARY ()
6
E
5
7
20.5
21
20
19.5
4
19
3
P
18.5
2
3
4
6
5
7
--34 --30
4
--26
--22
--24
3
P
8
--20
1
17.5
2
--28
E
5
2
18
1
0
--32
6
IMAGINARY ()
7
9
10
0
2
3
4
5
6
7
8
9
10
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
9
2500--2700 MHz
VGG
VDD
C13
C12
C11
C6
C5
C7
R1
C1
C4
Q1
C3
C2
C8
C9
AFT27S010N
Rev. 2
2300MHz/2500MHz
C10
D53817
VDD
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 16. AFT27S010NT1 Test Circuit Component Layout — 2500--2700 MHz
Table 10. AFT27S010NT1 Test Circuit Component Designations and Values — 2500--2700 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C5, C7, C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C2
1.2 pF Chip Capacitor
ATC100B1R2JT500XT
ATC
C3
1 pF Chip Capacitor
ATC100B1R0JT500XT
ATC
C6, C9, C10, C11, C12
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C13
220 F, 50 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
Q1
RF Power LDMOS Transistor
AFT27S010NT1
Freescale
R1
4.75  Chip Resistor
CRCW12064R75FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D53817
MTL
AFT27S010NT1
10
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2500--2700 MHz
Gps, POWER GAIN (dB)
22.5
22
VDD = 28 Vdc, Pout = 1.26 W (Avg.)
IDQ = 90 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
22
21.5
21
20
Gps
21
IRL
20.5
PARC
20
19.5
19
2510
0
--38
--5
--40
--42
ACPR
18.5
2480
--36
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
2540
2570
2600
2630
2660
2690
--44
--46
2720
--10
--15
--20
--25
0
--0.5
--1
--1.5
--2
PARC (dB)
23
IRL, INPUT RETURN LOSS (dB)
23
ACPR (dBc)
D
D, DRAIN
EFFICIENCY (%)
24
23.5
--2.5
f, FREQUENCY (MHz)
Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
2500 MHz
Gps
20
ACPR
18
2700 MHz
2700 MHz
2600 MHz
16
2600 MHz
2500 MHz
14
D
12
--10
55
--20
45
35
25
2500 MHz
2700 MHz
2600 MHz
1
0.3
65
15
10
5
20
--30
--40
--50
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier, W--CDMA
3.84 MHz Channel Bandwidth, Input Signal = 9.9 dB @
22 0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
24
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
5
Gain
20
0
15
--5
10
--10
IRL
5
0
2300
IRL (dB)
GAIN (dB)
25
10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 90 mA
--15
2400
2500
2600
2700
2800
--20
2900
f, FREQUENCY (MHz)
Figure 19. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
11
2300--2400 MHz
VDD
VGG
C13
C12
C11
C6
C5
C7
R1
C1
C14
Q1
C2
C4
C3
C8
C9
AFT27S010N
Rev. 2
2300MHz/2500MHz
C10
D53817
VDD
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 20. AFT27S010NT1 Test Circuit Component Layout — 2300--2400 MHz
Table 11. AFT27S010NT1 Test Circuit Component Designations and Values — 2300--2400 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C5, C7, C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C2, C14
1 pF Chip Capacitors
ATC100B1R0JT500XT
ATC
C3
1.2 pF Chip Capacitor
ATC100B1R2JT500XT
ATC
C6, C9, C10, C11, C12
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C13
220 F, 50 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
Q1
RF Power LDMOS Transistor
AFT27S010NT1
Freescale
R1
4.75 , Chip Resistor
CRCW12064R75FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D53817
MTL
AFT27S010NT1
12
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2300--2400 MHz
21.4
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
21.2 G
ps
21
22
D
20
ACPR
20.8
20.6
21
20
2290
2305
2320
2335
--40
--5
--42
IRL
20.2
0
--41
PARC
20.4
--39
--43
2350
2365
2380
2395
--10
--15
--20
--25
--44
2410
0
--0.5
--1
--1.5
--2
PARC (dB)
21.6
Gps, POWER GAIN (dB)
23
VDD = 28 Vdc
Pout = 1.26 W (Avg.)
IDQ = 90 mA
ACPR (dBc)
21.8
D, DRAIN
EFFICIENCY (%)
24
IRL, INPUT RETURN LOSS (dB)
22
--2.5
f, FREQUENCY (MHz)
Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
2300 MHz
22
2400 MHz
20
50
0
30
18
2350 MHz
ACPR
D
14
10
2350 MHz 40
Gps
16
60
2350 MHz
0.3
2300 MHz
2300 MHz
2400 MHz
10
2400 MHz
10
1
20
0
20
--10
--20
--30
ACPR (dBc)
Gps, POWER GAIN (dB)
24
VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal = 9.9 dB @ 0.01%
Probability on CCDF
D, DRAIN EFFICIENCY (%)
26
--40
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 22. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
5
0
Gain
20
--5
15
--10
--15
10
5
IRL (dB)
GAIN (dB)
25
IRL
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 90 mA
0
2050
2150
--20
2250
2350
2450
2550
--25
2650
f, FREQUENCY (MHz)
Figure 23. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
13
Table 12. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
5.39 + j2.23
20.1
40.9
12
55.9
--12
0.948 + j1.96
5.09 + j1.86
19.8
40.9
12
55.1
--12
1.29 + j1.95
4.51 + j1.56
19.2
40.8
12
55.8
--10
0.985 -- j3.50
0.743 + j3.66
4.81 + j1.10
19.0
41.3
13
56.2
--14
1.10 -- j3.13
1.48 + j2.98
4.14 + j0.987
19.0
41.0
13
57.5
--12
f
(MHz)
Zsource
()
Zin
()
2300
1.12 -- j1.10
0.995 + j1.38
2400
1.06 -- j1.59
2500
1.00 -- j1.60
2600
2690
Zload
()
(1)
Max Output Power
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
6.28 + j1.74
17.8
41.7
15
55.0
--19
0.861 + j2.23
5.86 + j1.41
17.5
41.7
15
54.4
--19
1.37 + j2.32
5.40 + j1.17
16.9
41.7
15
55.8
--17
0.985 -- j3.50
0.579 + j3.82
5.37 + j0.912
16.9
42.0
16
55.8
--22
1.10 -- j3.13
1.74 + j3.43
5.04 + j0.759
16.8
41.8
15
57.1
--18
f
(MHz)
Zsource
()
Zin
()
2300
1.12 -- j1.10
0.919 + j1.64
2400
1.06 -- j1.59
2500
1.00 -- j1.60
2600
2690
Zload
()
(2)
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 13. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 87 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
2300
1.12 -- j1.10
0.855 + j1.22
3.36 + j4.23
21.6
39.8
9
61.9
--20
2400
1.06 -- j1.59
0.829 + j1.80
3.34 + j3.53
21.2
39.9
10
60.4
--19
2500
1.00 -- j1.60
1.04 + j1.82
3.21 + j3.00
20.8
40.0
10
61.1
--16
2600
0.985 -- j3.50
0.709 + j3.49
3.17 + j2.53
20.0
40.5
11
60.7
--20
2690
1.10 -- j3.13
1.14 + j2.91
2.87 + j2.16
20.4
40.2
10
62.0
--18
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2300
1.12 j1.10
0.803 + j1.51
3.96 + j4.10
19.4
40.7
12
61.1
--27
2400
1.06 -- j1.59
0.757 + j2.07
3.70 + j3.45
19.1
40.6
12
59.8
--27
2500
1.00 -- j1.60
1.15 + j2.18
3.58 + j2.94
18.7
40.8
12
61.2
--24
2600
0.985 -- j3.50
0.556 + j3.73
4.15 + j2.29
17.8
41.5
14
59.7
--26
2690
1.10 -- j3.13
1.43 + j3.33
3.40 + j2.01
18.2
41.1
13
61.7
--25
(1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT27S010NT1
14
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
6
6
IMAGINARY ()
5
39
38 38.5
39.5
37.5
40
4
3
4
E
40.5
2
P
3
0
0
2
40
39.5
3
4
5
7
6
--1
8
58
60
P
1
39
E
2
1
--1
46
46
5
IMAGINARY ()
37
56
52
54
50
48
46
3
2
4
5
6
7
8
REAL ()
REAL ()
Figure 24. P1dB Load Pull Output Power Contours (dBm)
Figure 25. P1dB Load Pull Efficiency Contours (%)
6
6
5
21
3
20.5
20
E
19.5
2
P
19
1
18.5
18
--24 --20
--16
3
E
--18
--14
2
--12
--10
0
2
3
4
5
P
1
0
--1
--22
4
IMAGINARY ()
IMAGINARY ()
4
5
21.5
22
6
7
8
--1
2
3
4
5
6
7
REAL ()
REAL ()
Figure 26. P1dB Load Pull Gain Contours (dB)
Figure 27. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
8
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
15
P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
6
6
IMAGINARY ()
5
39
39.5
38.5
4
E
41.5
2
P
1
3
E
60
58
54
P
52
50
0
40
2
41
3
4
48
56
2
1
0
--1
50
4
41
3
48 50
46
5
40.5
40
IMAGINARY ()
37.5
38
5
7
6
--1
8
48
46
2
3
4
5
7
6
8
REAL ()
REAL ()
Figure 28. P3dB Load Pull Output Power Contours (dBm)
Figure 29. P3dB Load Pull Efficiency Contours (%)
6
6
5
5
19
3
18.5
18
E
17.5
2
--1
17
P
1
2
3
4
--24
--30 --26
3
--20
--18
E
--16
2
P
1
16.5
16
0
--28
4
IMAGINARY ()
4
IMAGINARY ()
19.5
20
--14
--22
0
5
6
7
8
--1
2
3
4
5
6
7
REAL ()
REAL ()
Figure 30. P3dB Load Pull Gain Contours (dB)
Figure 31. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
8
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
16
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 3400--3600 MHz
17
Input Signal PAR = 9.9 dB @ 0.01% 16
Probability on CCDF
15
D
16
Gps
15.5
15
PARC
14.5
14
13
3380
3440
3470
--44
--2
--45
--45.5
IRL
3410
0
--44.5
ACPR
13.5
--43.5
3500
3530
3560
--46
3620
3590
--4
--6
--8
--10
--0.6
--0.8
--1
--1.2
--1.4
PARC (dB)
16.5
18
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
17
D, DRAIN
EFFICIENCY (%)
17.5
19
VDD = 28 Vdc, Pout = 1.26 W (Avg.)
IDQ = 80 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
ACPR (dBc)
18
--1.6
f, FREQUENCY (MHz)
Figure 32. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
15
3500 MHz
14 3400 MHz
12
--10
50
--20
ACPR 40
3600 MHz
D 30
3500 MHz
13
60
3400 MHz
20
3600 MHz
3500 MHz
3600 MHz
Gps 10
3400 MHz
11
0.1
0
10
1
--30
--40
--50
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 80 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
16 Probability on CCDF
D, DRAIN EFFICIENCY (%)
17
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 33. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
2
18
Gain
0
14
--2
12
--4
10
--6
IRL
8
6
3100
3200
3300
3400
3500
3600
IRL (dB)
GAIN (dB)
16
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 80 mA
--8
3700
3800
--10
3900
f, FREQUENCY (MHz)
Figure 34. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
17
728--768 MHz
VDD
VGG
C15
C14
C11
C10
C6
C5
C2
C3
C4
C8
C7*
R1
C1*
C9*
Q1
AFT27S010N
Rev. 1
728MHz
C12
C13
D53406
C16
C17
VDD
*C1, C7 and C9 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 35. AFT27S010NT1 Test Circuit Component Layout — 728--768 MHz
Table 14. AFT27S010NT1 Test Circuit Component Designations and Values — 728--768 MHz
Part
Description
Part Number
Manufacturer
C1, C9
82 pF Chip Capacitors
ATC100B820JT500XT
ATC
C2
3.9 pF Chip Capacitor
ATC100B3R9JT500XT
ATC
C3
1.7 pF Chip Capacitor
ATC100B1R7JT500XT
ATC
C4
2.7 pF Chip Capacitor
ATC100B2R7JT500XT
ATC
C5, C10, C11, C12, C13
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C6, C14, C15, C16, C17
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C7
3.9 pF Chip Capacitor
ATC100B3R9JT500XT
ATC
C8
0.5 pF Chip Capacitor
ATC100B0R5JT500XT
ATC
Q1
RF Power LDMOS Transistor
AFT27S010NT1
Freescale
R1
10  Chip Resistor
CWCR120610R0JNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D53406
MTL
AFT27S010NT1
18
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 728--768 MHz
25
D
24
23
Gps
IRL
24.1
24
ACPR
--40
--11
--41
--12
--42
PARC
23.9
--43
23.8
--44
23.7
710
--45
720
730
740
750
760
770
780
--13
--14
--15
--16
790
0
--0.2
--0.4
--0.6
--0.8
PARC (dB)
24.2
26
IRL, INPUT RETURN LOSS (dB)
24.5
3.84 MHz Channel Bandwidth
24.4 Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
24.3
D, DRAIN
EFFICIENCY (%)
24.6
Gps, POWER GAIN (dB)
27
VDD = 28 Vdc, Pout = 1.26 W (Avg.)
IDQ = 80 mA, Single--Carrier W--CDMA
ACPR (dBc)
24.7
--1
f, FREQUENCY (MHz)
Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 1.26 W Avg.
24
22
768 MHz
748 MHz
748 MHz
ACPR
50
--20
30
20
728 MHz
18
--10
40
Gps
20
60
768 MHz
D
10
728 MHz
--30
--40
--50
--60
0
16
0.3
1
ACPR (dBc)
768 MHz
748 MHz
VDD = 28 Vdc, IDQ = 80 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
26 Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF 728 MHz
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
28
--70
20
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 37. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
28
0
GAIN (dB)
24
--2
Gain
--4
22
--6
20
--8
18
--10
IRL (dB)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 80 mA
26
IRL
16
550
600
650
700
750
800
850
900
--12
950
f, FREQUENCY (MHz)
Figure 38. Broadband Frequency Response
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
19
Table 15. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 81 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
728
2.05 + j12.1
1.72 -- j11.7
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
15.1 + j6.07
27.2
41.3
14
59.8
--15
748
2.04 + j11.1
1.69 -- j11.2
14.6 + j5.90
27.0
41.5
14
60.2
--15
768
1.94 + j10.5
1.69 -- j10.8
14.6 + j5.49
26.7
41.5
14
60.1
--14
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
728
2.05 + j12.1
1.53 -- j11.7
16.1 + j4.43
24.7
42.3
17
61.9
--17
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
748
2.04 + j11.1
1.50 -- j11.3
15.1 + j4.52
24.6
42.4
17
61.7
--17
768
1.94 + j10.5
1.46 -- j10.9
14.8 + j4.54
24.5
42.4
17
61.7
--16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 16. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 81 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
728
2.05 + j12.1
1.97 -- j10.7
18.5 + j16.4
27.9
39.7
9
68.4
--13
748
2.04 + j11.1
1.81 -- j9.83
16.7 + j20.1
28.6
38.9
8
68.5
--14
768
1.94 + j10.5
1.83 -- j9.69
17.4 + j18.0
28.3
39.5
9
69.2
--14
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
728
2.05 + j12.1
1.69 -- j10.8
748
2.04 + j11.1
1.58 -- j10.4
768
1.94 + j10.5
1.51 -- j9.87
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
18.3 + j18.6
26.1
40.3
11
73.7
--14
17.5 + j17.5
26.4
40.5
11
77.4
--14
15.8 + j19.1
26.8
40.0
10
72.8
--15
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT27S010NT1
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RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz
25
25
37.5
38
38.5
39
39.5
E
40.5
10
41
P
5
0
--5
12
10
15
66
10
64
P
5
62
60
58
56
0
40.5
40
E
68
40
15
66
20
IMAGINARY ()
IMAGINARY ()
20
52
14
16
20
18
--5
24
22
10
12
14
16
18
20
54
22
24
REAL ()
REAL ()
Figure 39. P1dB Load Pull Output Power Contours (dBm)
Figure 40. P1dB Load Pull Efficiency Contours (%)
25
25
30.5
29.5
30
IMAGINARY ()
20
E
29
15
28.5
28
27.5
10
27
26.5
P
5
IMAGINARY ()
20
15
--10
--12
E
--22
--20
--18
10
--16
P
5
--14
0
--5
0
10
12
14
16
18
20
22
24
--5
10
12
14
16
18
20
22
24
REAL ()
REAL ()
Figure 41. P1dB Load Pull Gain Contours (dB)
Figure 42. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
21
P3dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz
25
25
38.5
39
39.5
20
40
E
41
IMAGINARY ()
IMAGINARY ()
20
40.5
15
41.5
10
42
5
P
E 76
74
15
70
68
66
5
P
64
62
60
41.5
41
12
10
72
10
0
0
--5
68
14
16
20
18
--5
24
22
12
10
14
16
18
20
22
24
REAL ()
REAL ()
Figure 43. P3dB Load Pull Output Power Contours (dBm)
Figure 44. P3dB Load Pull Efficiency Contours (%)
25
28
27.5
--8
26.5
27
20
20
IMAGINARY ()
E
25.5
10
25
5
--5
24.5
P
10
12
14
16
18
15
--24
--12
--20
--22
10
--14
5
P
--18
24
0
--10
E
26
15
IMAGINARY ()
25
--16
0
20
22
24
--5
10
12
14
16
18
20
22
24
REAL ()
REAL ()
Figure 45. P3dB Load Pull Gain Contours (dB)
Figure 46. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S010NT1
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RF Device Data
Freescale Semiconductor, Inc.
0.28
7.11
0.165
4.91
0.089
2.26
Solder pad with thermal via
structure. All dimensions in mm.
0.155
3.94
0.085
2.16
Figure 47. PCB Pad Layout for PLD--1.5W
AFS10
N( )B
YYWW
Figure 48. Product Marking
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
23
PACKAGE DIMENSIONS
AFT27S010NT1
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RF Device Data
Freescale Semiconductor, Inc.
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
25
AFT27S010NT1
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RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2013
 Initial Release of Data Sheet
1
Sept. 2014
 Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect
actual reel size, p. 1
 Changed operating frequency from 728–2700 MHz to 728–3600 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
2
Nov. 2014
 Added 3400--3600 MHz performance information as follows:
-- Typical Frequency Band table, p. 1
-- Fig. 32, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance
@ Pout = 1.26 W Avg., p. 17
-- Fig. 33, Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power, p. 17
-- Fig. 34, Broadband Frequency Response, p. 17
3
Dec. 2015
 Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. 2
 Table 5, Electrical Characteristics, On Characteristics VDS(on): updated ID unit of measure to mAdc to
reflect actual unit of measure, p. 2
 Added Ordering Information Table 6, p. 3
AFT27S010NT1
RF Device Data
Freescale Semiconductor, Inc.
27
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E 2013–2015 Freescale Semiconductor, Inc.
AFT27S010NT1
Document Number: AFT27S010N
Rev. 3, 12/2015
28
RF Device Data
Freescale Semiconductor, Inc.
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