Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6P3300H
Rev. 2, 12/2009
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of this device make it ideal for large- signal, common- source amplifier
applications in 32 volt analog or digital television transmitter equipment.
• Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts,
IDQ = 1600 mA, Pout = 270 Watts PEP
Power Gain — 20.4 dB
Drain Efficiency — 44.8%
IMD — -28.8 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Designed for Push-Pull Operation Only
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRFE6P3300HR3
860 MHz, 300 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
°C/W
RθJC
0.23
0.24
0.27
0.27
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 350 μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
—
0.22
0.3
Vdc
Reverse Transfer Capacitance (4)
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.22
—
pF
Output Capacitance (4)
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
217
—
pF
Input Capacitance (1)
(VDS = 32 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
1060
—
pF
Off Characteristics
(1)
On Characteristics (1)
Dynamic Characteristics (1,2)
Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
Gps
19
20.4
23
dB
ηD
41
44.8
—
%
Intermodulation Distortion
IMD
—
-28.8
-27
dBc
Input Return Loss
IRL
—
-18.4
-9
dB
Drain Efficiency
1.
2.
3.
4.
Each side of the device measured separately.
Part internally matched both on input and output.
Measurement made with device in push-pull configuration.
Drains are tied together internally as this is a total device value.
MRFE6P3300HR3
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
+
B1
C23
+
R3
C1
C2
C3
Z19
Z8
Z4
Z2
RF
INPUT
C16
C15
Z12
C17
C18
Z10
COAX1
VSUPPLY
+
COAX3
Z14
Z16
C14
Z6
RF
Z18 OUTPUT
C4
Z1
Z3
C6
Z7
DUT
C5
C10 C11
Z9
R2
Z5
B2
Z20
Z13
C12
Z15
Z17
C13
COAX2
VBIAS
Z11
COAX4
+
C9
C7
+
C8
C24
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
0.401″ x 0.081″ Microstrip
0.563″ x 0.101″ Microstrip
1.186″ x 0.058″ Microstrip
0.416″ x 0.727″ Microstrip
0.191″ x 0.507″ Microstrip
1.306″ x 0.150″ Microstrip
Z12, Z13
Z14, Z15
Z16, Z17
Z18
Z19, Z20
PCB
C19
VSUPPLY
+
C20
C21
C22
0.225″ x 0.507″ Microstrip
0.440″ x 0.435″ Microstrip
0.123″ x 0.215″ Microstrip
0.401″ x 0.081″ Microstrip
0.339″ x 0.165″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.5
Figure 1. 820-900 MHz Narrowband Test Circuit Schematic
Table 5. 820-900 MHz Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair-Rite
C1, C9
1.0 μF, 50 V Tantulum Chip Capacitors
T491C105K050AT
Kemet
C2, C7, C17, C21
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C3, C8, C16, C20
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C4, C5, C13, C14
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C6, C12
8.2 pF Chip Capacitors
ATC100B8R2JT500XT
ATC
C10
9.1 pF Chip Capacitor
ATC100B9R1BT500XT
ATC
C11
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C15, C19
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Nippon
C18, C22
470 μF, 63 V Electrolytic Capacitors
ESME630ELL471MK25S
United Chemi-Con
C23, C24
22 pF Chip Capacitors
ATC100B220FT500XT
ATC
Coax1, 2, 3, 4
50 Ω, Semi Rigid Coax, 2.06″ Long
UT-141A-TP
Micro-Coax
R1, R2
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
R3
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
MRFE6P3300HR3
RF Device Data
Freescale Semiconductor
3
C15
C1
C18
C23
VGG
VDD
B1
C2 C3
R3
R1
C16
COAX3
MRF6P9220, Rev. 2
COAX1
C4
C6
CUT OUT AREA
C5
C14
C10 C11
C12
C13
COAX2
COAX4
R2
VGG
C7
C8
C17
C20
B2
C21
VDD
C24
C22
C9
C19
Figure 2. 820-900 MHz Narrowband Test Circuit Component Layout
MRFE6P3300HR3
4
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
27
Gps, POWER GAIN (dB)
20
Gps
25
19.5
VDD = 32 Vdc, Pout = 60 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
19
18.5
0
-50
-5
-55
18
17.5
-45
ACP-L
17
820
-60
ACP-U
830
840
-10
-15
IRL
850
860
870
880
890
-65
900
-20
IRL, INPUT RETURN LOSS (dB)
29
20.5
ηD, DRAIN
EFFICIENCY (%)
31
ηD
ACPR (dBc)
21
f, FREQUENCY (MHz)
Figure 3. Single-Carrier OFDM Broadband Performance
@ 60 Watts Avg.
42
ηD
Gps, POWER GAIN (dB)
19.5
40
19
Gps
38
VDD = 32 Vdc, Pout = 120 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
18.5
18
ACP-U
17.5
17
0
-45
-5
-50
ACP-L
IRL
-40
-55
16.5
820
830
840
850
860
870
880
890
-10
-15
-20
-60
900
IRL, INPUT RETURN LOSS (dB)
20
ηD, DRAIN
EFFICIENCY (%)
44
ACPR (dBc)
20.5
f, FREQUENCY (MHz)
Figure 4. Single-Carrier OFDM Broadband Performance
@ 120 Watts Avg.
21
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
-1 0
IDQ = 2400 mA
Gps, POWER GAIN (dB)
20
2000 mA
1600 mA
19
1200 mA
18
800 mA
17
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-2 0
-3 0
IDQ = 800 mA
-4 0
1200 mA
2400 mA
2000 mA
-5 0
1600 mA
-6 0
16
1
10
100
600
1
10
100
600
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6P3300HR3
RF Device Data
Freescale Semiconductor
5
TYPICAL NARROWBAND CHARACTERISTICS
-1 0
VDD = 32 Vdc, IDQ = 1600 mA
f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-2 0
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-1 0
-3 0
-4 0
5th Order
-5 0
3rd Order
-6 0
7th Order
-70
100
10
1
600
VDD = 32 Vdc, Pout = 150 W (PEP), IDQ = 1600 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 860 MHz
-2 0
IM3-L
-3 0
IM3-U
IM5-U
-4 0
IM5-L
-5 0
IM7-U
IM7-L
-6 0
-70
1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO-T ONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
80
63
Pout, OUTPUT POWER (dBm)
Ideal
P6dB = 56.28 dBm
(424.38 W)
62
61
P3dB = 55.9 dBm
(388.37 W)
60
59
58
P1dB = 55.15 dBm
(327.9 W)
57
Actual
56
55
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 860 MHz
54
53
32
33
34
35
36
37
38
39
40
41
42
Pin, INPUT POWER (dBm)
45
40
35
-30
25_C
85_C
25_C
ηD
30
25
TC = -30_C
-25
-30 _C
VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
85_C
25_C
20
ACP-U
15
-40
-45
Gps
-30 _C
85_C
-35
-50
-55
-60
10
ACP-L
5
-65
-70
0
1
10
100
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single-Carrier DVBT OFDM ACPR, Power
Gain and Drain Efficiency versus Output Power
MRFE6P3300HR3
6
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
22
Gps
60
25_C
19
50
85_C
40
85_C
18
30
17
20
ηD
VDD = 32 Vdc
IDQ = 1600 mA
f = 860 MHz
16
10
19
18
17
IDQ = 1600 mA
f = 860 MHz
10
15
1
20
Gps, POWER GAIN (dB)
25_C
20
21
ηD, DRAIN EFFICIENCY (%)
TC = -30 _C
21
Gps, POWER GAIN (dB)
70
-30 _C
32 V
30 V
16
0
800
100
VDD = 28 V
0
50
100
150
200
250
300
350
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
400
MTTF (HOURS)
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 32 Vdc, Pout = 270 W PEP, and ηD = 44.8%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6P3300HR3
RF Device Data
Freescale Semiconductor
7
DIGITAL TEST SIGNALS
100
-2 0
7.61 MHz
-3 0
10
-5 0
-6 0
0.1
(dB)
PROBABILITY (%)
-4 0
1
8K Mode DVTB OFDM
64 QAM Data Carrier Modulation
5 Symbols
0.01
ACPR Measured at 3.9 MHz Offset
from Center Frequency
-7 0
-8 0
-9 0
0.001
20 kHz BW
-1 00
20 kHz BW
-110
0.0001
0
2
4
6
8
10
12
-5
-4
-3
-2
-1
0
1
2
3
4
PEAK-T O-A VERAGE (dB)
f, FREQUENCY (MHz)
Figure 14. Single-Carrier DVTB OFDM
Figure 15. 8K Mode DVBT OFDM Spectrum
5
MRFE6P3300HR3
8
RF Device Data
Freescale Semiconductor
f = 890 MHz
Zload
f = 830 MHz
Zo = 10 Ω
f = 890 MHz
f = 830 MHz
Zsource
VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP
f
MHz
Zsource
Ω
Zload
Ω
830
4.52 - j6.73
4.89 - j1.35
845
4.22 - j6.38
5.06 - j1.01
860
3.89 - j5.81
5.18 - j0.58
875
3.54 - j5.10
5.27 - j0.11
890
3.39 - j4.32
5.36 + j0.43
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
-
Z
source
Output
Matching
Network
+
Z
load
Figure 16. 820-900 MHz Narrowband Series Equivalent Source and Load Impedance
MRFE6P3300HR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
4
G
ccc
R
M
T A
M
B
M
Q
bbb
2X
L
T A
M
M
B
M
J
(LID)
2
1
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
(FLANGE)
5
4X
S
M
T A
3
4
B
(INSULATOR)
bbb
K
4X
M
B
M
D
bbb
M
ccc
T A
M
M
B
T A
M
M
B
M
F
N
(LID)
E
M
H
C
(INSULATOR)
bbb
A
M
T A
M
B
T
M
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.180
0.224
0.325
0.335
0.060
0.070
0.004
0.006
1.100 BSC
0.097
0.107
0.2125 BSC
0.135
0.165
0.425 BSC
0.852
0.868
0.851
0.869
0.118
0.138
0.395
0.405
0.394
0.406
0.010 REF
0.015 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
A
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
4.57
5.69
8.26
8.51
1.52
1.78
0.10
0.15
27.94 BSC
2.46
2.72
5.397 BSC
3.43
4.19
10.8 BSC
21.64
22.05
21.62
22.07
3.00
3.30
10.03
10.29
10.01
10.31
0.25 REF
0.38 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375G-04
ISSUE G
NI-860C3
MRFE6P3300HR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2007
• Initial Release of Data Sheet
1
Dec. 2008
• Table 4, Dynamic Characteristics, corrected Ciss test condition to indicate AC stimulus on the VGS
connection versus the VDS connection, corrected Typ value from 106 to 1060 pF, p. 2
• Fig. 1, Test Circuit Schematic, Z-list, changed Z4, Z5 from 1.013″ x 0.058″ Microstrip to 1.186″ x 0.058″
Microstrip; Z10, Z11 from 1.054″ x 0.150″ Microstrip to 1.306″ x 0.150″ Microstrip; and Z19, Z20 from
0.165″ x 0.339″ Microstrip to 0.339″ x 0.165″ Microstrip; also separated Z1 and Z18 into two lines in
Z-list, p. 3
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
2
Dec. 2009
• Data sheet revised to reflect part status change, removing MRFE6P3300HR5. Refer to PCN13420.
(See Rev. 1 data sheet for MRFE6P3300HR5.)
MRFE6P3300HR3
RF Device Data
Freescale Semiconductor
11
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MRFE6P3300HR3
Document Number: MRFE6P3300H
Rev. 2, 12/2009
12
RF Device Data
Freescale Semiconductor