Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT18H356--24S
Rev. 1, 3/2015
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of
1805 to 1995 MHz.
1800 MHz
 Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, Pout = 63 W Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
15.1
47.3
7.6
–33.2
–13
1840 MHz
15.5
47.4
7.5
–35.5
–13
1880 MHz
15.0
46.7
7.3
–38.5
–12
AFT18H356--24SR6
1805–1995 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
1900 MHz
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 950 mA, VGSB = 1.3 Vdc, Pout = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz
15.3
48.4
7.6
–30.3
–18
1960 MHz
15.5
48.1
7.5
–30.6
–16
1995 MHz
15.4
47.8
7.4
–31.2
–12
Features
 Advanced High Performance In--Package Doherty
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4L2L
6 VBWA(1)
Carrier
RFinA/VGSA 1
5 RFoutA/VDSA
RFinB/VGSB 2
4 RFoutB/VDSB
Peaking
3 VBWB(1)
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
 Freescale Semiconductor, Inc., 2013, 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
CW
289
1.9
W
W/C
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77C, 63 W CW, 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, 1880 MHz
Symbol
Value (2,3)
Unit
RJC
0.47
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 146 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 1100 mAdc, Measured in Functional Test)
VGSA(Q)
2.4
2.9
3.4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 291 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.9 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
(4)
On Characteristics -- Side A (4)
On Characteristics -- Side B (4)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFT18H356--24SR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4 . Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 V,
Pout = 63 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
14.5
15.0
17.0
dB
Drain Efficiency
D
45.0
46.7
—
%
PAR
6.8
7.3
—
dB
ACPR
—
–38.5
–26.0
dBc
IRL
—
–12
–8
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 1100 mA, VGSB = 1.45 Vdc, f = 1840 MHz, 1--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carriers. PAR = 9.9 dB @ 0.01% Probability on CCDF.
VSWR 10:1 at 31 Vdc, 148 W W--CDMA Output Power
(3 dB Input Overdrive from P1dB with W--CDMA Test Signal)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 1100 mA,
VGSB = 1.45 Vdc, 1805–1880 MHz Bandwidth
P1dB
—
400 (3,4)
—
W
(5)
P3dB
—
480
—
W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz bandwidth)

—
–24
—

VBWres
—
80
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.48
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.02
—
dB/C
P1dB
—
0.026
—
dB/C
Pout @ 1 dB Compression Point, CW
Pout @ 3 dB Compression Point
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C) (4)
1.
2.
3.
4.
5.
Part internally matched both on input and output.
Measurements made with device in an asymmetrical Doherty configuration.
Calculated from load pull P3dB measurements.
Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
3
C15
VGGA
C17
C4
R1
C11
C13
C10
C
C2
R3
Z1
C19
C3
C20
P
CUT OUT AREA
C6
C1
VDDA
C8
C25
C26
VGGB
C21
C24
C27
C7
C5
C22
C23
R2
C12
C9
C14
C16
VDDB
C18
D50288
AFT18H356--24S
Rev. 0
Figure 2. AFT18H356--24SR6 Production Test Circuit Component Layout — 1805–1880 MHz
Table 5. AFT18H356--24SR6 Production Test Circuit Component Designations and Values — 1805–1880 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C8, C9,
C10, C23, C24
18 F Chip Capacitors
GQM2195C2E180FB12D
Murata
C6, C19, C22, C25
1.2 F Chip Capacitors
GQM2195C2E1R2BB12D
Murata
C7, C20
1.5 pF Chip Capacitors
GQM2195C2E1R5BB12D
Murata
C11, C12
4.7 F Chip Capacitors
GRM32ER71H475KA88B
Murata
C13, C14, C17, C18
22 F Chip Capacitors
C5750Y5V1H226ZT
TDK
C15, C16
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
C21
0.6 pF Chip Capacitor
ATC600F0R6BT250XT
ATC
C26, C27
2.4 pF Chip Capacitors
GQM2195C2E2R4BB12D
Murata
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 10 W Terminator Resistor
81A7031-50-5F
Florida Labs
Z1
1900 MHz Band, 5 dB Directional Coupler
XC1900A--05S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D50288
MTL
AFT18H356--24SR6
4
RF Device Data
Freescale Semiconductor, Inc.
VGGA
C3
C5
R1
D50791
C13
VDDA
C15
C9
C17
C11
C7
C1
CUT OUT AREA
C
P
R3
C8
C19
C2
C12
C18
R2
C6
C4
AFT18H356--24S
Rev. 1
C16
C10
VDDB
C14
VGGB
Figure 3. AFT18H356--24SR6 Characterization Test Circuit Component Layout — 1805–1880 MHz
Table 6. AFT18H356--24SR6 Characterization Test Circuit Component Designations and Values — 1805–1880 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C9, C10
18 pF Chip Capacitors
GQM2195C2E180FB12D
Murata
C5, C6
2.2 F Chip Capacitors
C1206C225K4RAC
Kemet
C7
24 pF Chip Capacitor
ATC100B240JT500XT
ATC
C8
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C11, C12
2.2 F Chip Capacitors
C1825C225J5RAC
Kemet
C13, C14
22 F Chip Capacitors
C5750Y5V1H226ZT
TDK
C15, C16
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C17, C18
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C19
0.4 pF Chip Capacitor
ATC600F0R4BT250XT
ATC
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 10 W Terminator Resistor
81A7031--50--5F
Florida Labs
PCB
Rogers RO4350B, 0.020, r = 3.66
D50791
MTL
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
5
48
D
16
46
Gps
15
13
12
44
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
14
--30
--9
--32
--10
--34
PARC
--36
11
10
ACPR
IRL
9
1760
1780
1800
1820
1840
1860
1880
--38
--11
--12
--13
--40
1920
1900
--14
--2
--2.2
--2.4
--2.6
--2.8
PARC (dB)
50
IRL, INPUT RETURN LOSS (dB)
17
Gps, POWER GAIN (dB)
52
VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 1100 mA
VGSB = 1.45 Vdc, Single--Carrier W--CDMA
18
ACPR (dBc)
19
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 1805–1880 MHz
--3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
--10
VDD = 28 Vdc, Pout = 70 W (PEP), IDQA = 1100 mA
VGSB = 1.45 Vdc, Two--Tone Measurements, (f1 + f2)/2 = Center
--20 Frequency of 1840 MHz
IM3--L
--30
IM3--U
--40
IM5--U
IM5--L
--50
--60
IM7--L
IM7--U
1
10
100
TWO--TONE SPACING (MHz)
17
0
16
15
14
13
12
D
ACPR
--1
--1 dB = 30 W
--2
--5
10
30
50
50
--25
30
--3 dB = 79 W
20
VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc
f = 1840 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
--4
--20
40
Gps
--2 dB = 58 W
--3
60
70
PARC
90
110
--30
--35
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
18
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
10
--45
0
--50
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT18H356--24SR6
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–1880 MHz
D
1880 MHz
1805 MHz
16
1840 MHz
1805 MHz
15
1880 MHz
1880 MHz
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
50
--10
40
20
1805 MHz
1840 MHz
12
0
ACPR 30
14
13
60
10
10
0
300
100
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc
Single--Carrier W--CDMA, 3.84 MHz
17 Channel Bandwidth
Gps 1840 MHz
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
17
GAIN (dB)
15
5
Gain
0
14
--5
13
--10
IRL
12
11
1600
1650
1700
1750
1800
1850
1900
IRL (dB)
16
10
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 1100 mA
VGSB = 1.45 Vdc
--15
1950
--20
2000
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
7
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 777 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
1.20 -- j4.69
1.31 + j4.72
1840
1.35 -- j4.79
1.46 + j4.96
1880
1.61 -- j4.95
1.77 + j5.18
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.12 -- j4.80
16.2
51.5
142
56.2
--10
1.10 -- j4.89
16.1
51.5
140
55.5
--9
1.10 -- j4.93
16.4
51.4
139
55.4
--9
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
1.20 -- j4.69
1.20 + j4.92
1.07 -- j4.99
13.9
52.3
169
57.2
--15
1840
1.35 -- j4.79
1.36 + j5.19
1.08 -- j5.07
13.9
52.2
166
56.6
--15
1880
1.61 -- j4.95
1.69 + j5.47
1.10 -- j5.15
14.1
52.1
163
55.9
--15
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQA = 777 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.59 -- 3.98
19.1
49.6
90
68.3
--16
1.41 + j5.01
2.49 -- j4.11
19.0
49.5
90
66.8
--14
1.69 + j5.21
2.30 -- j4.09
19.1
49.5
89
65.1
--14
f
(MHz)
Zsource
()
Zin
()
1805
1.20 -- j4.69
1.25 + j4.80
1840
1.35 -- j4.79
1880
1.61 -- j4.95
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1805
1.20 -- j4.69
1.15 + j4.94
1840
1.35 -- j4.79
1.33 + j5.19
1880
1.61 -- j4.95
1.63 + j5.45
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.51 -- j4.15
17.0
50.3
108
68.2
--23
2.45 -- j4.29
16.8
50.3
107
66.1
--21
2.22 -- j4.17
17.0
50.2
104
64.0
--21
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H356--24SR6
8
RF Device Data
Freescale Semiconductor, Inc.
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
1.07 -- j4.05
0.98 + j4.30
1840
1.23 -- j4.30
1.24 + j4.67
1880
1.45 -- j4.70
1.76 + j5.14
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.38 -- j4.37
14.0
54.6
291
58.2
--27
1.40 -- j4.58
13.8
54.7
293
57.4
--26
1.44 -- j4.72
13.8
54.6
288
56.5
--28
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
1.07 -- j4.05
0.951 + j4.39
1.98 -- j3.71
13.2
54.4
277
68.0
--37
1840
1.23 -- j4.30
1.25 + j4.81
1.83 -- j4.08
12.7
54.9
307
65.6
--37
1880
1.45 -- j4.70
1.88 + j5.34
2.11 -- j4.65
12.1
55.0
316
59.5
--28
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.37 -- j1.94
15.4
51.6
145
73.1
--36
1.08 + j4.59
2.18 -- j2.05
15.4
51.6
144
73.1
--36
1.55 + j5.03
2.14 -- j2.33
15.3
51.8
150
72.0
--36
f
(MHz)
Zsource
()
Zin
()
1805
1.07 -- j4.05
0.853 + j4.24
1840
1.23 -- j4.30
1880
1.45 -- j4.70
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1805
1.07 -- j4.05
0.92 + j4.37
1840
1.23 -- j4.30
1.19 + j4.76
1880
1.45 -- j4.70
1.81 + j5.26
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.53 -- j2.47
13.4
52.9
193
73.1
--43
2.34 -- j2.65
13.4
53.0
200
73.2
--43
2.89 -- j3.68
12.9
54.0
249
74.2
--37
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
9
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
--3
--3
48.5
47.5
--3.5
--3.5
66
IMAGINARY ()
48.5
--4
IMAGINARY ()
48
E
--4.5
49.5
50
51
P
--5
49
50.5
--5.5
--4
E
62
P
--5
60
--5.5
50
--6
1.5
1
2
2.5
REAL ()
3
3.5
--6
4
--3
--3
--3.5
--3.5
E
IMAGINARY ()
IMAGINARY ()
20
--4
19.5
--4.5
19
P
16.5
--5.5
18
17
1
2.5
REAL ()
--22
3
3.5
4
--20
--18
--16
--4
E
--14
--4.5
--12
P
--5
--10
18.5
--8
17.5
1.5
2
--5.5
16
--6
1.5
1
58
56
54
52
Figure 10. P1dB Load Pull Efficiency Contours (%)
Figure 9. P1dB Load Pull Output Power Contours (dBm)
--5
64
--4.5
2
2.5
REAL ()
3
3.5
4
Figure 11. P1dB Load Pull Gain Contours (dB)
NOTE:
--6
0.5
1
1.5
REAL ()
2
2.5
3
Figure 12. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
10
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
--3
--3
48.5
--3.5
50.5
--4
50
51
E
--4.5
52
--5
49
49.5
IMAGINARY ()
IMAGINARY ()
--3.5
51.5
P
--5.5
--6
--4
E 66
--4.5
64
--5
P
62
--5.5
1.5
1
2
2.5
REAL ()
3
3.5
--6
4
50 52
1.5
1
2.5
REAL ()
3
3.5
4
--3
--3
--3.5
--3.5
--26
--24
18
--4
17.5
E
--4.5
IMAGINARY ()
IMAGINARY ()
2
56
Figure 14. P3dB Load Pull Efficiency Contours (%)
Figure 13. P3dB Load Pull Output Power Contours (dBm)
17
--5
P
14.5 15
--5.5
15.5
--4
--22
--4.5
--18
--5
P
16.5
16
1
1.5
E
--20
--16
--5.5
14
--6
60
58
56
54
2
--6
2.5
REAL ()
3
3.5
4
Figure 15. P3dB Load Pull Gain Contours (dB)
NOTE:
--14
--12
1
1.5
2
2.5
REAL ()
3
3.5
4
Figure 16. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
11
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
0
0
50.5
51
--2
52.5
--3
53.5
--4
P
52
53
54
54.5
70
72
51.5
E
62
--1
IMAGINARY ()
IMAGINARY ()
--1
64
60
--2
68
E
66
64
--3
--4
62
60
P
--5
--5
--6
--6
58
1.5
1
2
2.5
3
3.5
REAL ()
4
5
4.5
0
2
2.5
3
3.5
REAL ()
4
4.5
5
0
14
--2
E
15
15.5
--3
--4
12.5
12
1
--2
2
2.5
3
3.5
REAL ()
--34
--36
--32
E
--30
--3
--28
--4
--26
P
--5
14
13.5
13
1.5
--40
14.5
P
--5
--38
--1
IMAGINARY ()
--1
IMAGINARY ()
1.5
Figure 18. P1dB Load Pull Efficiency Contours (%)
Figure 17. P1dB Load Pull Output Power Contours (dBm)
--6
1
--24
4
4.5
5
Figure 19. P1dB Load Pull Gain Contours (dB)
NOTE:
--6
1
1.5
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 20. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
12
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
--1
--1
51.5
--1.5
--2
52.5
--2.5
E
IMAGINARY ()
IMAGINARY ()
--2
53
--3
53.5
--3.5
54
--4
P
1.5
2
2.5
3
3.5
REAL ()
4
5
4.5
--1
68
P
1
1.5
2
IMAGINARY ()
E
--3.5
13
--4
P
--4.5
--48
1
12.5
1.5
2.5
3
3.5
REAL ()
4
4.5
5
--44
E
--40
--38
--3
--36
--34
--3.5
--32
P
--4.5
12
2
3
3.5
REAL ()
--42
--2.5
--4
12
11.5
2.5
--46
--2
13.5
62
60
--1.5
--3
64
66
--1
--2
--2.5
70
Figure 22. P3dB Load Pull Efficiency Contours (%)
12
--1.5
IMAGINARY ()
72
--3.5
--5
Figure 21. P3dB Load Pull Output Power Contours (dBm)
--5
E
--3
--4.5
55
1
--2.5
--4
54.5
--4.5
--5
--1.5
52
4
5
4.5
Figure 23. P3dB Load Pull Gain Contours (dB)
NOTE:
--5
1
1.5
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 24. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
13
ALTERNATE CHARACTERIZATION — 1930–1995 MHz
C13
VGGA
C18
C5
C15
R1
C
C1
C2
R3
AFT18H356--24S
Rev. 2
C9
P
CUT OUT AREA
C3
VDDA
D53347
C7
C11
C8
C12
C10
C4
R2
C6
VGGB
VDDB
C17
C14
C16
Figure 25. AFT18H356--24SR6 Test Circuit Component Layout — 1930–1995 MHz
Table 11. AFT18H356--24SR6 Test Circuit Component Designations and Values — 1930–1995 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C7, C9,
C10
18 pF Chip Capacitors
GQM2195C2E180FB12D
Murata
C5, C6
2.2 F Chip Capacitors
C1206C225K4RAC
Kemet
C8
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C11, C12
0.1 pF Chip Capacitors
ATC600F0R1BT250XT
ATC
C13, C14
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C15, C16
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C17, C18
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 Ω, 10 W Chip Resistor
81A7031--50--5F
Florida RF Labs
PCB
Rogers RO4350B, 0.020, r = 3.66
D53347
MTL
AFT18H356--24SR6
14
RF Device Data
Freescale Semiconductor, Inc.
17
16
15
14
--28
13
PARC --29
12
--30
11
--31
10
1880
ACPR
IRL
1900
1920
1940
1960
1980
2000
--9
--32
2040
2020
--11
--13
--15
--17
--19
--2
--2.4
--2.8
--3.2
--3.6
PARC (dB)
Gps, POWER GAIN (dB)
18
IRL, INPUT RETURN LOSS (dB)
52
VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 950 mA
50
VGSB = 1.3 Vdc, Single--Carrier W--CDMA
D
48
3.84 MHz Channel Bandwidth
46
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
44
Gps
--27
19
ACPR (dBc)
20
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 1930–1995 MHz
--4
f, FREQUENCY (MHz)
Figure 26. Single--Carrier Output Peak--to--Average Ratio
Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg.
16
D
1960 MHz
1960 MHz
1930 MHz
12
--10
50
--20
40
30
1995 MHz
14
60
Gps
1930 MHz
20
10
--30
--40
--50
ACPR (dBc)
1960 MHz
VDD = 28 Vdc, IDQA = 950 mA
1995 MHz
1930 MHz
VGSB = 1.3 Vdc, Single--Carrier
20 W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB
18 @ 0.01%= Probability on CCDF
ACPR
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
--60
1995 MHz
0
300
10
1
10
100
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 27. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
16
30
Gain
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 950 mA
VGSB = 1.3 Vdc
14
GAIN (dB)
20
13
10
0
IRL (dB)
15
--10
12
IRL
11
10
1810
--20
1850
1890
1930
1970
2010
2050
2090
--30
2130
f, FREQUENCY (MHz)
Figure 28. Broadband Frequency Response
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
15
Table 12. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 775 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1930
1.98 -- j5.37
2.22 + j5.56
1960
2.08 -- j5.43
2.59 + j5.75
1995
2.42 -- j5.68
3.14 + j5.82
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.13 -- j5.10
16.4
51.2
132
53.7
--10
1.11 -- j5.19
16.2
51.1
129
52.4
--10
1.10 -- j5.38
16.2
50.9
124
50.1
--10
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1930
1.98 -- j5.37
2.20 + j5.93
1.10 -- j5.31
14.1
51.9
155
53.4
--16
1960
2.08 -- j5.43
2.64 + j6.19
1.10 -- j5.49
13.8
51.8
151
51.2
--15
1995
2.42 -- j5.68
3.29 + j6.34
1.07 -- j5.53
13.9
51.6
146
49.9
--15
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 13. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQA = 775 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.20 -- j4.31
19.0
49.4
87
61.8
--13
2.43 + j5.74
2.15 -- j4.14
19.1
48.9
78
59.9
--14
2.94 + j5.79
2.15 -- j4.62
18.9
49.1
81
57.3
--11
f
(MHz)
Zsource
()
Zin
()
1930
1.98 -- j5.37
2.13 + j5.54
1960
2.08 -- j5.43
1995
2.42 -- j5.68
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1930
1.98 -- j5.37
2.14 + j5.88
1960
2.08 -- j5.43
2.51 + j6.12
1995
2.42 -- j5.68
3.21 + j6.20
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.08 -- j4.39
16.8
50.2
105
61.2
--19
1.91 -- j4.22
16.8
49.9
98
59.4
--21
2.11 -- j4.65
16.8
50.0
99
57.1
--17
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H356--24SR6
16
RF Device Data
Freescale Semiconductor, Inc.
Table 14. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1930
2.34 -- j5.33
3.02 + j6.08
1960
3.57 -- j5.40
4.37 + j6.41
1995
4.83 -- j4.85
6.83 + j5.71
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.58 -- j4.91
13.9
54.5
285
56.8
--28
1.79 -- j5.19
13.8
54.5
281
55.9
--27
1.98 -- j5.45
13.8
54.4
276
55.5
--26
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1930
2.34 -- j5.33
3.31 + j6.32
1.96 -- j5.00
12.1
55.2
330
60.6
--35
1960
3.57 -- j5.40
4.91 + j6.61
1.98 -- j5.29
11.9
55.2
331
58.7
--34
1995
4.83 -- j4.85
7.71 + j5.38
2.23 -- j5.91
11.5
55.2
331
55.3
--31
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 15. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.99 -- j2.55
15.2
51.8
151
71.0
--35
3.82 + j6.34
1.88 -- j2.67
15.1
51.7
147
70.1
--35
6.03 + j5.96
2.00 -- j2.88
15.0
51.8
152
69.7
--33
f
(MHz)
Zsource
()
Zin
()
1930
2.34 -- j5.33
2.65 + j5.93
1960
3.57 -- j5.40
1995
4.83 -- j4.85
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1930
2.34 -- j5.33
3.03 + j6.23
1960
3.57 -- j5.40
4.45 + j6.62
1995
4.83 -- j4.85
7.11 + j5.78
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.97 -- j3.02
13.3
53.0
200
70.7
--44
1.85 -- j3.07
13.2
52.8
189
69.6
--44
1.94 -- j3.28
13.1
52.9
196
69.7
--42
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
17
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz
--3
--3
--3.5
--3.5
46 50
48
47
E
IMAGINARY ()
IMAGINARY ()
--4
47.5
48
--4.5
50
49.5
--5
P
--5.5
--6
48.5
E
--4.5
58
--5
P
50.5
51
56
--5.5
1.5
1
49
--4
2
2.5
REAL ()
3
3.5
--6
4
46 48
50
1.5
1
54
52
2
2.5
REAL ()
3
--3
--3
--3.5
--3.5
--26
--22
--24
--18
--20
IMAGINARY ()
IMAGINARY ()
20
E
19.5
--4.5
19
--5
--5.5
16
--6
1
17
16.5
1.5
17.5
2
E
--4.5
--12
--5
P
--10
--5.5
18
2.5
REAL ()
--16
--14
--4
18.5
P
4
Figure 30. P1dB Load Pull Efficiency Contours (%)
Figure 29. P1dB Load Pull Output Power Contours (dBm)
--4
3.5
--10
3
3.5
4
Figure 31. P1dB Load Pull Gain Contours (dB)
NOTE:
--6
0.5
1
1.5
REAL ()
2
2.5
3
Figure 32. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
18
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz
--3
--3
--3.5
--3.5
--4
E
--4.5
IMAGINARY ()
IMAGINARY ()
--4
48
--5
--5.5
51
P
50.5
50
49.5
49
48.5
51.5
--6
52
50
P
48
--6
--7
--7
1.5
2
2.5
3
3.5
REAL ()
4
5
4.5
46
44
1.5
1
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 34. P3dB Load Pull Efficiency Contours (%)
Figure 33. P3dB Load Pull Output Power Contours (dBm)
--3
--3
--3.5
--26
--30 --28
--24
--3.5
E
--22
17.5
--4.5
IMAGINARY ()
--4
IMAGINARY ()
54
--5.5
--6.5
17
--5
16.5
--5.5 P
16
15.5
--6
14.5
13.5
--6.5
--7
56
58
--5
--6.5
1
E
--4.5
15
1.5
--20
E
--4.5
--18
--5
--16
--5.5
P
--14
14
1
--4
2
2.5
3
3.5
REAL ()
4
5
4.5
Figure 35. P3dB Load Pull Gain Contours (dB)
NOTE:
--6
0.5
1
1.5
REAL ()
2
2.5
3
Figure 36. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
19
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz
--1
50.5
52.5
--4
54
--5
53
53.5
P
--6
53
53.5
1
68
66
--4
64
--1
13.5
2
2.5
3
3.5
REAL ()
4
--5
P
56
1.5
2
--1
--38 --36
--2
IMAGINARY ()
E
15
--4
14.5
P
14
13.5
--6
11.5
12
1
1.5
2
3
3.5
REAL ()
4
4.5
5
--34
--32
E
--3
--30
--28
--26
--4
--24
--5
P
--6
13
12.5
--7
2.5
Figure 38. P1dB Load Pull Efficiency Contours (%)
--2
--5
58
54
1
5
4.5
14
--3
60
62
--7
1.5
Figure 37. P1dB Load Pull Output Power Contours (dBm)
IMAGINARY ()
E
--3
--6
--7
54
--2
52
E
--3
56
51.5
IMAGINARY ()
IMAGINARY ()
--2
--1
51
--22
--7
2.5
3
3.5
REAL ()
4
4.5
5
Figure 39. P1dB Load Pull Gain Contours (dB)
NOTE:
1
1.5
2
2.5
3
REAL ()
3.5
4
4.5
5
Figure 40. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
20
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz
--1
--1
51
51.5
52
--2
56
54
--2
--3
IMAGINARY ()
IMAGINARY ()
52.5
53
E
53.5
54
--4
54.5
--5
--6
1.5
2
11 11.5
3
3.5
--6
4
P
54
1
1.5
2
60
58
56
2.5
REAL ()
3
IMAGINARY ()
--3
E
13
--4
--5
1
11.5
1.5
4
--44
--42
--3
--30
--38
--46
--40
--36
E
--34
--4
12.5
--6
3.5
--1
12
--2
11
64
Figure 42. P3dB Load Pull Efficiency Contours (%)
--2
IMAGINARY ()
66
--4
55
2.5
REAL ()
68
62
Figure 41. P3dB Load Pull Output Power Contours (dBm)
--1
E
--5
P
1
--3
P
2
--32
--5
12
2.5
REAL ()
3
3.5
4
Figure 43. P3dB Load Pull Gain Contours (dB)
NOTE:
--6
P
1
1.5
2
--30
2.5
REAL ()
3
3.5
4
Figure 44. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
21
PACKAGE DIMENSIONS
AFT18H356--24SR6
22
RF Device Data
Freescale Semiconductor, Inc.
AFT18H356--24SR6
RF Device Data
Freescale Semiconductor, Inc.
23
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
1
Mar. 2015
Description
 Initial Release of Data Sheet
AFT18H356--24SR6
24
RF Device Data
Freescale Semiconductor, Inc.
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