Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT18H357--24S
Rev. 0, 3/2014
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 1805 to
1995 MHz.
AFT18H357--24SR6
1800 MHz
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 800 mA, VGSB = 0.7 Vdc, Pout = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
17.3
50.3
7.8
--34.6
1840 MHz
17.5
49.7
7.9
--37.4
1880 MHz
17.4
50.3
7.8
--37.6
1805–1995 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
1900 MHz
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 800 mA, VGSB = 0.4 Vdc, Pout = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
17.0
49.1
7.7
--34.6
1960 MHz
17.1
48.9
7.6
--37.4
1995 MHz
17.0
49.1
7.4
--37.6
Features
 Advanced High Performance In--Package Doherty
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4L2L
6 VBWA(1)
Carrier
RFinA/VGSA 1
5 RFoutA/VDSA
RFinB/VGSB 2
4 RFoutB/VDSB
Peaking
3 VBWB(1)
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with the VDD
current supplied through pin 3 and pin 6.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT18H357--24SR6
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
C
CW
378
3.24
W
W/C
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79C, 63 W W--CDMA, 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, 1840 MHz
RJC
0.43
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
IV
Charge Device Model (per JESD22--C101)
B
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 140 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 800 mAdc, Measured in Functional Test)
VGSA(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.4 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 240 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics (4)
On Characteristics -- Side A (4)
On Characteristics -- Side B (4)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFT18H357--24SR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.7 V,
Pout = 63 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
16.6
17.3
19.6
dB
Drain Efficiency
D
47.4
50.3
—
%
PAR
7.4
7.8
—
dB
ACPR
—
--34.6
--32.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQA = 800 mA, f = 1840 MHz, 10 sec Pulse Width, 10% Duty Cycle
VSWR 10:1 at 32 Vdc, 360 W Pulse Output Power
(3 dB Input Overdrive from 210 W Pulse Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc,
1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
220
—
W
Pout @ 3 dB Compression Point (3)
P3dB
—
320
—
W

—
--15
—

VBWres
—
110
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.008
—
dB/C
P1dB
—
0.009
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805--1880 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C) (4)
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
3
C15
VGGA
-C11
C1
C9
C3
R1
C7
P
R2
C6
C19
CUT OUT AREA
C
C17
C18
Z1
C13
C21
C5
R3
VDDA
C8
C20
C22
AFT18H357--24S
Rev. 6
C12
C10
C2
C14
C4
D55983
-VGGB
VDDB
C16
Figure 2. AFT18H357--24SR6 Test Circuit Component Layout — 1805–1880 MHz
Table 5. AFT18H357--24SR6 Test Circuit Component Designations and Values — 1805–1880 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
20 pF Chip Capacitors
ATC600F200JT250XT
ATC
C5, C6
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C7, C8
8.2 pF Chip Capacitors
ATC600F8R2JT250XT
ATC
C9, C10, C11, C12,
C13, C14
10 F Chip Capacitors
C5750X7S2A106K230KB
TDK
C15, C16
220 F, 63 V Electrolytic Capacitors
SK063M0220B5S-1015
YAGEO
C17
0.8 pF Chip Capacitor
ATC600F0R8BT250XT
ATC
C18
0.9 pF Chip Capacitor
ATC600F0R9BT250XT
ATC
C19
1.2 pF Chip Capacitor
ATC600F1R2BT250XT
ATC
C20
0.2 pF Chip Capacitor
ATC600F0R2BT250XT
ATC
C21, C22
2.2 F Chip Capacitors
C3225X7R2A225KT
TDK
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 10 W Chip Resistor
CW12010T0050GBK
ATC
Z1
1700--2000 MHz Band 90, 5 dB Directional Coupler
X3C19P1--05S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D55983
MTL
AFT18H357--24SR6
4
RF Device Data
Freescale Semiconductor, Inc.
D
17.6
17.5
52
51
50
49
Gps
17.4
17.3
PARC
17.2
17.1
--2
--38
IRL
1800
--32
--36
17
1780
--1.8
--34
ACPR
16.9
1760
--30
1820
1840
1860
1880
--40
1920
1900
--2.2
--2.4
--2.6
PARC (dB)
Gps, POWER GAIN (dB)
17.7
53
VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 800 mA
VGSB = 0.7 Vdc, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
17.8
ACPR (dBc)
17.9
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 1805–1880 MHz
--2.8
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
0
VDD = 28 Vdc, Pout = 32 W (PEP), IDQA = 800 mA, VGSB = 0.7 Vdc
Two--Tone Measurements, (f1 + f2)/2 = Center
--15 Frequency of 1840 MHz
IM3--U
--30
IM3--L
IM7--L
--45
--60
--75
IM5--L
IM7--U
1
IM5--U
100
10
300
TWO--TONE SPACING (MHz)
17.8
0
17.6
17.4
17.2
17
16.8
VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc
f = 1840 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
D
--1
--2 dB = 63 W
ACPR
PARC
--3 dB = 85 W
Gps
--5
20
35
55
--33
45
--3
--4
--31
50
--1 dB = 40 W
--2
60
50
65
80
95
40
--35
--37
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
18
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--39
35
--41
30
--43
110
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–1880 MHz
Gps, POWER GAIN (dB)
20
18
Gps
16
1840 MHz
30
1880 MHz
14 1805 MHz
12
D
10
1805 MHz
1840 MHz
1880 MHz
10
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
10
20
0
400
100
--10
--20
--30
--40
--50
ACPR (dBc)
60
1880 MHz
VDD = 28 Vdc, IDQA = 800 mA
VGSB = 0.7 Vdc, Single--Carrier
50
1805 MHz
W--CDMA, 3.84 MHz Channel Bandwidth
1840 MHz
ACPR
40
D, DRAIN EFFICIENCY (%)
22
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
Gain
17
GAIN (dB)
16
15
14
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 800 mA
VGSB = 0.7 Vdc
13
12
1620
1680
1740
1800
1860
1920
1980
2040
2100
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT18H357--24SR6
6
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 789 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
1.22 - j3.38
1.25 + j3.43
1840
1.37 - j3.43
1.38 + j3.55
1880
1.67 - j3.79
1.73 + j3.78
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.64 - j4.15
19.7
51.8
152
57.3
-10
1.62 - j4.36
19.6
51.8
152
57.2
-10
1.58 - j4.51
19.5
51.8
151
56.7
-11
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
1.22 - j3.38
1.15 + j3.61
1.57 - j4.42
17.4
52.6
183
58.2
-16
1840
1.37 - j3.43
1.29 + j3.76
1.54 - j4.59
17.3
52.6
182
57.8
-16
1880
1.67 - j3.79
1.66 + j4.07
1.57 - j4.80
17.3
52.6
181
57.2
-16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 7. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQA = 789 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.59 - j2.59
22.4
49.7
93
69.0
-18
1.29 + j3.65
3.16 - j2.97
22.1
50.0
101
68.2
-17
1.65 + j3.89
3.06 - j3.13
22.1
50.0
100
67.5
-17
f
(MHz)
Zsource
()
Zin
()
1805
1.22 - j3.38
1.17 + j3.55
1840
1.37 - j3.43
1880
1.67 - j3.79
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1805
1.22 - j3.38
1.07 + j3.65
1840
1.37 - j3.43
1.19 + j3.80
1880
1.67 - j3.79
1.55 + j4.11
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.22 - j3.06
20.0
50.9
122
69.5
-24
3.07 - j3.01
20.1
50.7
117
68.5
-24
3.00 - j3.18
20.0
50.7
117
67.4
-24
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
7
Table 8. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
0.831 - j3.07
0.799 + j3.11
1840
1.13 - j3.28
0.919 + j3.29
1880
1.40 - j3.52
1.27 + j3.61
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.82 - j4.08
16.2
54.1
254
58.0
-30
1.90 - j4.32
16.2
54.1
259
58.3
-28
2.01 - j4.58
16.2
54.1
257
57.8
-29
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
0.831 - j3.07
0.787 + j3.23
1.84 - j4.35
14.0
54.7
297
58.6
-37
1840
1.13 - j3.28
0.938 + j3.44
1.98 - j4.65
14.0
54.8
301
58.8
-35
1880
1.40 - j3.52
1.34 + j3.82
2.12 - j4.91
14.0
54.8
299
58.0
-36
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.94 - j2.16
17.7
52.2
165
71.2
-37
0.768 + j3.24
3.51 - j1.93
17.6
52.1
162
71.2
-36
1.03 + j3.55
3.00 - j1.81
17.6
51.9
155
71.2
-38
f
(MHz)
Zsource
()
Zin
()
1805
0.831 - j3.07
0.685 + j3.07
1840
1.13 - j3.28
1880
1.40 - j3.52
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1805
0.831 - j3.07
0.725 + j3.21
1840
1.13 - j3.28
0.837 + j3.41
1880
1.40 - j3.52
1.19 + j3.79
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.80 - j2.97
15.5
53.3
212
70.8
-45
3.62 - j2.72
15.5
53.2
208
70.7
-44
3.32 - j2.95
15.5
53.4
220
70.5
-44
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H357--24SR6
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
--1
--1
48
--2
48.5
--3
E
49
49.5
--4
P
51.5
50.5
51
IMAGINARY ()
IMAGINARY ()
--2
50
--5
1
1.5
2
3
2.5
3.5
4
REAL ()
4.5
5
66
P
--5
--7
6
5.5
56
52
1
1.5
2
2.5
3
58
64
62
60
54
3.5
4
REAL ()
4.5
5
5.5
6
Figure 9. P1dB Load Pull Efficiency Contours (%)
--1
--1
--24
23
--2
IMAGINARY ()
E
21.5
--4
P
21
--5
19.5
--3
--14
--4
P
--12
--5
1
1.5
2
2.5
3
3.5
4
REAL ()
4.5
5
6
5.5
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
--7
--16
E
--10
--6
20
--20
--18
20.5
--6
--22
--2
22.5
22
--3
--7
68
--4
Figure 8. P1dB Load Pull Output Power Contours (dBm)
IMAGINARY ()
E
--6
--6
--7
--3
--8
1
1.5
2
2.5
3
3.5
4
REAL ()
4.5
5
5.5
6
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
--1
--1
48.5
--2
49
--3
E
49.5
50
--4
P 52.5
--5
51
52
--6
IMAGINARY ()
IMAGINARY ()
--2
50.5
51.5
68
--3
E
66
--4
64
P
60
58
--6
1
1.5
2
3
2.5
3.5
4
REAL ()
4.5
5
--7
6
5.5
1.5
2
2.5
3
3.5
4
REAL ()
--30
--2
--2
20
P
19.5
18.5
17
--6
--7
IMAGINARY ()
IMAGINARY ()
E
--5
17.5
1
1.5
2
19
3
3.5
4
REAL ()
--3
6
4.5
5
6
5.5
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
--22
--20
--4
--18
P
--5
--7
--28
--24
E
--16
--14
--6
18
2.5
5.5
--26
20.5
--4
5
--1
21
--3
4.5
Figure 13. P3dB Load Pull Efficiency Contours (%)
Figure 12. P3dB Load Pull Output Power Contours (dBm)
--1
1
56
54
52
--7
62
--5
1
1.5
2
2.5
3
3.5
4
REAL ()
4.5
5
5.5
6
Figure 15. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
0
0
50.5
50
51
--1
--1
E
--2
--3
IMAGINARY ()
IMAGINARY ()
51.5
52
53
52.5
--4
P
54
E
--2
70
--3
68
64
P
53.5
--5
62
--5
56
53
--6
2
1
3
4
REAL ()
5
--6
7
6
1
2
60
58
3
4
REAL ()
0
0
--1
--1
--2
IMAGINARY ()
IMAGINARY ()
--42
E
17.5
--3
17
--4
15
--5
14
1
--2
2
7
--38
--40
--34
--3
--32
--30
--4
--5
16.5
16
6
--36
P
15.5
5
E
P
14.5
56
Figure 17. P1dB Load Pull Efficiency Contours (%)
Figure 16. P1dB Load Pull Output Power Contours (dBm)
--6
66
--4
--28
--6
3
4
REAL ()
5
6
7
Figure 18. P1dB Load Pull Gain Contours (dB)
NOTE:
1
2
3
4
REAL ()
5
6
7
Figure 19. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
0
0
51
62
51.5
--1
--1
52.5
E
--3
53
--4
54
P
--5
2
1
3
4
REAL ()
5
68
--4
--6
7
6
--1
--1
--2
--2
--3
15
--4
13
--5
--6
IMAGINARY ()
0
E
12
1
12.5
P
13.5
14.5
64
54 56
2
1
60
58
3
62
58
4
REAL ()
--48
E
--3
5
6
7
--46
--44
--42
--40
--4
--38
P
--5
14
2
66
P
Figure 21. P3dB Load Pull Efficiency Contours (%)
0
15.5
70
E
--3
--5
Figure 20. P3dB Load Pull Output Power Contours (dBm)
IMAGINARY ()
--2
53.5
54.5
54
--6
IMAGINARY ()
IMAGINARY ()
52
--2
--36
--32
--34
--6
3
4
REAL ()
5
6
7
Figure 22. P3dB Load Pull Gain Contours (dB)
NOTE:
1
2
3
4
REAL ()
5
6
7
Figure 23. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
12
RF Device Data
Freescale Semiconductor, Inc.
ALTERNATE CHARACTERIZATION — 1930–1995 MHz
VGGA
-C11
C1
C9
C3
C7
C5
C6
P
C17
AFT18H357--24S
Rev. 6
C18
R2
CUT OUT AREA
C
R3
C15
C13
R1
Z1
VDDA
C8
C12
C19
C10
C2
C14 C4
D55813
C16
VDDB
-VGGB
Figure 24. AFT18H357--24SR6 Test Circuit Component Layout — 1930--1995 MHz
Table 10. AFT18H357--24SR6 Test Circuit Component Designations and Values — 1930--1995 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
15 pF Chip Capacitors
ATC600F150JT250XT
ATC
C5, C6, C8
8.2 pF Chip Capacitors
ATC600F8R2JT250XT
ATC
C7
3.9 pF Chip Capacitor
ATC600F3R9JT250XT
ATC
C9, C10, C11, C12,
C13, C14
10 F Chip Capacitors
C5750X7SA106K230KB
TDK
C15, C16
220 F, 63 V Electrolytic Capacitors
SK063M0220B5S-1015
YAGEO
C17, C19
0.2 pF Chip Capacitors
ATC600F0R2BT250XT
ATC
C18
0.9 pF Chip Capacitor
ATC600F0R9BT250XT
ATC
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 10 W Chip Resistor
CW12010T0050GBK
ATC
Z1
1700--2000 MHz Band 90, 5 dB Directional Coupler
X3C19P1--05S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D55813
MTL
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
13
51
VDD = 28 Vdc, Pout = 63 W (Avg.) IDQA = 800 mA
VGSB = 0.4 Vdc, Single--Carrier W--CDMA, 3.84 MHz 50.5
Channel Bandwidth, Input Signal PAR = 9.9 dB
50
@ 0.01% Probability on CCDF
49.5
D
49
Gps, POWER GAIN (dB)
17.3
17.2
17.1
17
Gps
16.9
PARC
16.8
16.7
16.5
1880
1900
1920
1940
1960
--2.1
--32
--2.2
--34
--36
ACPR
16.6
--30
--38
1980
2000
2020
ACPR (dBc)
17.4
--2.3
--2.4
--2.5
--40
2040
PARC (dB)
17.5
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 1930–1995 MHz
--2.6
f, FREQUENCY (MHz)
Figure 25. Single--Carrier Output Peak--to--Average Ratio
Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg.
Gps, POWER GAIN (dB)
20
1995 MHz
1960 MHz
1930 MHz
18
--10
50
--20
ACPR
40
1960 MHz
16
14
60
1995 MHz
1930 MHz
D
10
20
1930 MHz
1960 MHz
12
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01%= Probability on CCDF
1
30
1995 MHz
10
10
Gps
100
0
400
--30
--40
--50
ACPR (dBc)
VDD = 28 Vdc, IDQA = 800 mA
VGSB = 0.4 Vdc
Single--Carrier W--CDMA
D, DRAIN EFFICIENCY (%)
22
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 26. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
18
Gain
GAIN (dB)
16
14
12
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 800 mA
VGSB = 0.4 Vdc
10
8
1660
1750
1840
1930
2020
2110
2200
2290
f, FREQUENCY (MHz)
Figure 27. Broadband Frequency Response
AFT18H357--24SR6
14
RF Device Data
Freescale Semiconductor, Inc.
Table 11. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 790 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1930
2.31 - j4.08
2.36 + j4.20
1960
2.73 - j4.53
2.83 + j4.49
1995
3.52 - j4.43
3.64 + j4.64
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.63 - j4.80
19.5
51.7
149
55.4
-11
1.63 - j4.87
19.4
51.7
149
55.2
-11
1.72 - j5.06
19.5
51.6
146
54.0
-11
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1930
2.31 - j4.08
2.34 + j4.60
1.62 - j5.05
17.2
52.5
178
56.1
-16
1960
2.73 - j4.53
2.89 + j4.97
1.66 - j5.16
17.2
52.5
177
55.7
-17
1995
3.52 - j4.43
3.88 + j5.20
1.76 - j5.34
17.2
52.4
173
54.7
-16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 12. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQA = 790 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.94 - j3.26
22.0
49.9
98
65.8
-16
2.72 + j4.60
2.87 - j3.27
22.0
49.8
95
65.4
-17
3.52 + j4.76
2.89 - j3.42
22.1
49.7
94
63.6
-15
f
(MHz)
Zsource
()
Zin
()
1930
2.31 - j4.08
2.25 + j4.31
1960
2.73 - j4.53
1995
3.52 - j4.43
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1930
2.31 - j4.08
2.15 + j4.68
1960
2.73 - j4.53
2.68 + j5.07
1995
3.52 - j4.43
3.62 + j5.39
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.61 - j3.08
20.0
50.5
112
66.1
-26
2.58 - j3.15
20.0
50.5
111
65.7
-26
2.37 - j3.33
20.0
50.6
114
64.8
-25
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
15
Table 13. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1930
2.31 - j4.08
2.00 + j4.23
1960
3.28 - j4.32
2.69 + j4.66
1995
4.55 - j4.25
4.00 + j4.92
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.28 - j4.89
16.1
54.1
256
57.5
-30
2.54 - j5.11
16.1
54.1
255
57.7
-30
2.87 - j5.40
16.1
54.0
250
56.3
-30
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1930
2.31 - j4.08
2.23 + j4.52
2.54 - j5.29
13.9
54.7
297
57.6
-36
1960
3.28 - j4.32
3.08 + j4.97
2.79 - j5.46
13.9
54.7
296
57.5
-37
1995
4.55 - j4.25
4.73 + j5.11
3.20 - j5.65
14.0
54.6
291
57.0
-37
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 14. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.85 - j2.12
17.5
52.1
162
70.7
-37
2.17 + j4.63
2.67 - j1.93
17.3
51.7
149
70.6
-39
3.29 + j5.06
2.76 - j2.21
17.4
51.9
157
69.8
-37
f
(MHz)
Zsource
()
Zin
()
1930
2.31 - j4.08
1.66 + j4.17
1960
3.28 - j4.32
1995
4.55 - j4.25
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
1930
2.31 - j4.08
1.95 + j4.48
1960
3.28 - j4.32
2.69 + j4.98
1995
4.55 - j4.25
4.09 + j5.32
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.18 - j2.71
15.3
53.2
208
70.0
-45
3.13 - j2.72
15.3
53.2
207
69.8
-45
2.90 - j2.56
15.4
52.8
191
69.0
-47
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18H357--24SR6
16
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz
--1
--1
47.5
48.5
--3
E
49.5
--2
48
IMAGINARY ()
IMAGINARY ()
--2
49
--4
--5
50.5
51
P
50
--3
E
62
64
--4
60
56
P
--5
54
52
51.5
--6
--6
--7
50
1
1.5
2
3
2.5
3.5
4
REAL ()
4.5
5
--7
6
5.5
--1
1
1.5
2
3
2.5
3.5
4
REAL ()
4.5
5
5.5
6
--1
23
--2
E
22
--4
21.5
21
P
--5
19
1
1.5
2
E
--14
--4
P
--5
--12
--6
19.5
2.5
--18
--16
--3
20.5
20
--6
--20
--24
22.5
--3
--22
--2
IMAGINARY ()
IMAGINARY ()
50
Figure 29. P1dB Load Pull Efficiency Contours (%)
Figure 28. P1dB Load Pull Output Power Contours (dBm)
--7
58
3
3.5
4
REAL ()
4.5
5
6
5.5
Figure 30. P1dB Load Pull Gain Contours (dB)
NOTE:
--7
--10
1
1.5
2
2.5
3
3.5
4
REAL ()
4.5
5
5.5
6
Figure 31. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
17
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz
--1
--1
48.5
49.5
--3
E
--2
49
IMAGINARY ()
IMAGINARY ()
--2
50
--4
52
--5
51
P
50.5
51
60
--5
1
1.5
2
3
2.5
3.5
4
REAL ()
4.5
5
--7
6
5.5
58
56
P
54
52
50
1
1.5
2
3
2.5
3.5
4
REAL ()
4.5
5
5.5
6
Figure 33. P3dB Load Pull Efficiency Contours (%)
--1
--1
21
--2
--2
20.5
--3
E
IMAGINARY ()
IMAGINARY ()
62
64
--4
--6
Figure 32. P3dB Load Pull Output Power Contours (dBm)
20
--4
19.5
--5
19
P
17
1
1.5
2
E
3
3.5
4
REAL ()
4.5
5
6
5.5
Figure 34. P3dB Load Pull Gain Contours (dB)
NOTE:
--24
--22
--4
--7
--20
--18
--5
P
--16
--6
17.5
2.5
--26
--28
--30
--3
18.5
18
--6
--7
E
51.5
--6
--7
--3
--14
1
1.5
2
2.5
3
3.5
4
REAL ()
4.5
5
5.5
6
Figure 35. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
18
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz
0
--1
0
51
--1
51.5
EE
--2
52
--3
53
--4
--5
P
--6
52
3
4
REAL ()
5
P
1
3
2
--3
17
--4
16.5
--5
P
16
--6
13.5 14
14.5
3
5
6
7
--40
--36
E
--34
--3
--32
--4
--30
--5
P
--28
--7
15
4
REAL ()
4
REAL ()
--6
15.5
--7
2
56
--38
--42
--2
E
1
58
54
--1
IMAGINARY ()
IMAGINARY ()
60
--5
0
16
--2
62
Figure 37. P1dB Load Pull Efficiency Contours (%)
--1
--8
68
--4
--8
7
6
Figure 36. P1dB Load Pull Output Power Contours (dBm)
0
64
66
--7
53
2
1
70
--3
--6
52.5
--7
--8
53.5
54
E
--2
52.5
IMAGINARY ()
IMAGINARY ()
50.5
50
5
6
7
Figure 38. P1dB Load Pull Gain Contours (dB)
NOTE:
--8
1
2
3
4
REAL ()
5
6
7
Figure 39. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
19
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz
--1
--2
52
52.5
E
--3
--2
53
53.5
--4
IMAGINARY ()
IMAGINARY ()
--1
51
51.5
50.5
54
--5
P
--6
--8
52.5
1
1.5
68
--4
66
64
--5
54
62
60
58
P
--6
54.5
--7
E
--3
56
--7
53
53.5
2
2.5
3
3.5
4
REAL ()
4.5
5
5.5
--8
6
1
1.5
2
2.5
3
3.5
4
REAL ()
4.5
5
5.5
6
Figure 41. P3dB Load Pull Efficiency Contours (%)
Figure 40. P3dB Load Pull Output Power Contours (dBm)
52.5
--1
--1
--2
--2
IMAGINARY ()
15
--4
14.5
--5
P
14
--6
11.5
1
1.5
2
12.5
12
2.5
3
--48
--44 --42
--40
E
--3
--38
--4
--5
--36
P
--34
--7
13
3.5
4
REAL ()
--46
--6
13.5
--7
--8
IMAGINARY ()
E
--3
--50
4.5
5
5.5
6
Figure 42. P3dB Load Pull Gain Contours (dB)
NOTE:
--8
1
1.5
2
2.5
3
3.5
4
REAL ()
4.5
5
5.5
6
Figure 43. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18H357--24SR6
20
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
21
AFT18H357--24SR6
22
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Mar. 2014
Description
 Initial Release of Data Sheet
AFT18H357--24SR6
RF Device Data
Freescale Semiconductor, Inc.
23
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AFT18H357--24SR6
Document Number: AFT18H357--24S
Rev. 0, 3/2014
24
RF Device Data
Freescale Semiconductor, Inc.
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