Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT18HW355S
Rev. 1, 1/2013
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 1805 to 1880 MHz.
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 1100 mA, VGSB = 1.45 Vdc, Pout = 63 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
14.8
48.1
7.3
--27.2
--13
1840 MHz
15.3
48.9
7.4
--27.7
--12
1880 MHz
15.2
48.3
7.5
--29.2
--9
AFT18HW355SR6
1805--1880 MHz, 63 W AVG., 28 V
Features
 Advanced High Performance In--Package Doherty
 Designed for Wide Instantaneous Bandwidth Applications
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
For R5 Tape and Reel option, see p. 15.
NI--1230S--4
Carrier
1 RFoutA/VDSA
RFinA/VGSA 3
(1)
2 RFoutB/VDSB
RFinB/VGSB 4
Peaking
(Top View)
Figure 1. Pin Connections
1. Pin connections 1 and 2 are DC coupled
and RF independent.
 Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT18HW355SR6
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +125
C
TJ
--40 to +225
C
CW
259
0.64
W
W/C
Operating Junction Temperature Range
(1,2)
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 77C, 63 W CW, 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, 1840 MHz
Case Temperature 106C, 225 W CW(4), 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, 1840 MHz
RJC
Value (2,3)
Unit
C/W
0.47
0.30
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 146 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 1100 mAdc, Measured in Functional Test)
VGS(Q)
2.4
2.9
3.4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 291 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.9 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
(5)
On Characteristics -- Side A (5) (Carrier)
On Characteristics -- Side B (5) (Peaking)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Each side of device measured separately.
(continued)
AFT18HW355SR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, Pout = 63 W Avg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
14.2
15.2
17.0
dB
Drain Efficiency
D
45.0
48.3
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
7.1
7.5
—
dB
ACPR
—
--29.2
--26.0
dBc
IRL
—
--9
--8
dB
Load Mismatch (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 1100 mA, VGSB = 1.45 Vdc, f1 = 1795 MHz, f2 = 1895 MHz,
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. PAR = 9.9 dB @ 0.01% Probability on CCDF.
VSWR 10:1 at 32 Vdc, 252 W W--CDMA Output Power
No Device Degradation
Typical Performances (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc,
1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
350 (4,5)
—
W
Pout @ 3 dB Compression Point (6)
P3dB
—
400
—
W

—
22
—

VBWres
—
150
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.63
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.01
—
dB/C
P1dB
—
0.013
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across the
1805--1880 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C) (5)
1.
2.
3.
4.
5.
6.
Part internally matched both on input and output.
VDDA and VDDB must be tied together and powered by a single DC power supply.
Measurement made with device in an asymmetrical Doherty configuration.
Calculated from load pull P3dB measurements.
Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
AFT18HW355SR6
RF Device Data
Freescale Semiconductor, Inc.
3
C15
C13
VGGA
C5
C11
VDDA
R1
C9
AFT18HW355S
Rev. 3
C3
C1
C7
CUT OUT AREA
C
R3
C2
C4
C8
P
C10
R2
VGGB
VDDB
C12
C6
C14
C16
Note 1: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. AFT18HW355SR6 Test Circuit Component Layout
Table 5. AFT18HW355SR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C7, C9, C10 18 pF Chip Capacitors
GQM2195C2A180JB12D
Murata
C5, C6
2.2 F Chip Capacitors
C1206C225K4RAC
Kemet
C8
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C11, C12
2.2 F Chip Capacitors
C1825C225K5RAC
Kemet
C13, C14
22 F Chip Capacitors
C5750Y5V1H226Z
TDK
C15, C16
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 10 W Chip Resistor
81A7031--50--5F
Florida RF Labs
PCB
0.020, r = 3.5
RO4350B
Rogers
AFT18HW355SR6
4
RF Device Data
Freescale Semiconductor, Inc.
D
15.5
15
Gps
14.5
14
ACPR
48
47
46
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
--27
--4
--28
--6
--29
13.5
PARC
13
--30
12.5
--31
IRL
12
1760
1780
1800
1820
1840
1860
1880
1900
--8
--10
--12
--32
1920
--14
--2.2
--2.4
--2.6
--2.8
--3
PARC (dB)
Gps, POWER GAIN (dB)
16
49
VDD = 28 Vdc, Pout = 63 W (Avg.)
IDQA = 1100 mA, VGSB = 1.45 Vdc
Single--Carrier W--CDMA
IRL, INPUT RETURN LOSS (dB)
50
16.5
ACPR (dBc)
17
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--3.2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
--20
IM3--U
--30
IM3--L
IM5--L
--40
IM5--U
--50
IM7--U
IM7--L
VDD = 28 Vdc, Pout = 53 W (PEP), IDQA = 1100 mA
VGSB = 1.45 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
--60
--70
1
10
100
200
TWO--TONE SPACING (MHz)
16.5
1
16
15.5
15
14.5
14
0
D
--1 dB = 15 W
--15
50
--20
40
ACPR
--1
30
PARC
--2 dB = 42 W
Gps
--2
20
--3 dB = 71 W
VDD = 28 Vdc, IDQA = 1100 mA
VGSB = 1.45 Vdc, f = 1840 MHz
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
--3
--4
60
10
25
40
55
70
--25
--30
ACPR (dBc)
2
D DRAIN EFFICIENCY (%)
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--35
10
--40
0
--45
85
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT18HW355SR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
1840 MHz
16
1805 MHz
15
1840 MHz
13 1880 MHz
12
ACPR
1880 MHz
1805 MHz
Gps
1880 MHz
--10
50
--20
40
30
20
1840 MHz
1805 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
1
60
10
100
10
0
300
--30
--40
--50
ACPR (dBc)
Gps, POWER GAIN (dB)
17
14
D
VDD = 28 Vdc, IDQA = 1100 mA
VGSB = 1.45 Vdc, Single--Carrier W--CDMA
D, DRAIN EFFICIENCY (%)
18
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
19
GAIN (dB)
17
15
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 1100 mA
VGSB = 1.45 Vdc
10
5
Gain
15
0
13
--5
IRL
11
9
1700
IRL (dB)
21
--10
1750
1800
1850
1900
1950
2000
2050
--15
2100
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT18HW355SR6
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQA = 1100 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
(1)
P1dB
P3dB
Max
Linear
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
f
(MHz)
Zsource
()
Zin
()
1805
1.14 - j4.15
1.12 + j4.37
1.21 - j4.03
18.3
51.8
151
58.1
9.2
52.7
186
60.0
15
1840
1.14 - j4.41
1.32 + j4.55
1.24 - j4.24
18.4
51.6
145
57.4
9.1
52.6
182
59.4
16
1880
1.54 - j4.56
1.61 + j4.79
1.23 - j4.39
18.2
51.7
148
56.6
9.2
52.6
182
58.3
15
Zload
()
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 8. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 1100 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
(dBm)
1805
1.14 - j4.15
1.08 + j4.44
2.56 - j3.08
21.1
1840
1.14 - j4.41
1.25 + j4.64
2.54 - j2.75
1880
1.54 - j4.56
1.53 + j4.87
2.30 - j3.10
P3dB
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
49.9
98
69.8
15
50.6
115
71.8
24
21.6
49.3
85
68.9
16
50.6
115
71.2
26
21.3
49.6
91
68.1
16
50.6
115
70.1
26
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
AFT18HW355SR6
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, VGSB = 1.7 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
(1)
P1dB
P3dB
Max
Linear
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
f
(MHz)
Zsource
()
Zin
()
1805
0.88 - j3.59
0.97 + j3.83
1.35 - j4.28
15.1
54.8
302
57.0
29
54.9
309
64.7
39
1840
1.07 - j3.87
1.25 + j4.16
1.37 - j4.53
15.0
54.7
295
55.3
29
55.2
331
61.4
38
1880
1.66 - j4.15
1.80 + j4.58
1.56 - j4.77
15.1
54.6
288
55.6
28
55.3
339
58.8
36
Zload
()
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 10. Peaking Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, VGSB = 1.7 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
(dBm)
1805
0.88 - j3.59
0.86 + j3.78
2.24 - j2.33
16.7
1840
1.07 - j3.87
1.10 + j4.10
2.05 - j2.42
1880
1.66 - j4.15
1.59 + j4.49
2.08 - j2.52
P3dB
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
52.4
174
72.4
36
53.2
209
72.0
45
16.8
52.3
170
71.6
37
53.2
209
71.0
46
16.6
52.1
162
70.4
36
53.1
204
70.0
44
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
AFT18HW355SR6
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
--1.5
--1.5
--2
--2
47.5
48
E
--3
--3.5
--4
P
--4.5
51.5
51
--5
50
--6 49
0.5
E
--3
--4
64
62
60
58
56
54
52
P
--4.5
1
1.5
--5.5
48
49.5
2
2.5
3
3.5
--6
4
0.5
1
1.5
REAL ()
2
3
2.5
3.5
4
REAL ()
Figure 12. P1dB Load Pull Output Power Contours (dBm)
Figure 13. P1dB Load Pull Efficiency Contours (%)
--1.5
--1.5
--2
--2
--2.5
--2.5
19
18
--3
17
--3.5
E
18.5
21
17.5
IMAGINARY ()
IMAGINARY ()
66
--3.5
--5
50.5
--5.5
68
--2.5
IMAGINARY ()
IMAGINARY ()
48.5
49
47.5
--2.5
20.5
--4
P
--4.5
20
--5
--22
--3
--14
--18
E
--12
--16
--3.5
--10
--4
P
--4.5
--8
--5
19.5
--5.5
--20
--5.5
--6
--6
--6
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
REAL ()
1.5
2
2.5
3
3.5
4
REAL ()
Figure 14. P1dB Load Pull Gain Contours (dB)
NOTE:
Figure 15. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT18HW355SR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
--1.5
--1.5
48.5
--2
49
50
50.5
--3
49.5
E
--3.5
--4
P
--4.5
52.5
--5
52
51.5
--5.5
--6
1
0.5
E
--3.5
--4
66
64
62
60
58
56
54
P
--4.5
--5.5
1.5
--6
2
2.5
3
3.5
4
0.5
1
1.5
2
3
2.5
3.5
4
REAL ()
REAL ()
Figure 16. P3dB Load Pull Output Power Contours (dBm)
Figure 17. P3dB Load Pull Efficiency Contours (%)
--1.5
--1.5
--2
--2
--2.5
--2.5
17
16
--3
--3.5
19
E
16.5
15
15.5
--4
18.5
P
--4.5
IMAGINARY ()
IMAGINARY ()
--3
--5
51
50.5
66
70
--2.5
IMAGINARY ()
IMAGINARY ()
--2.5
68
--2
18
--5
--3
--28
--26
--24
E
--22
--3.5
--20
--4
--18
P
--4.5
--16
--5
17.5
--5.5
--30
--32
--5.5
--6
--6
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 18. P3dB Load Pull Gain Contours (dB)
Figure 19. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
4
Power Gain
Drain Efficiency
Linearity
Output Power
AFT18HW355SR6
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
--1
--1
50.5
E
--3
--4
P
--5
--6
54.5
70
--3
66
E
--7
1
1.5
62
60
P
58
56
54
--5
--6
52.5
53.5
53
64
--4
54
52.5
52
0.5
68
--2
IMAGINARY ()
IMAGINARY ()
--2
51
51.5
52
52.5
--7
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
REAL ()
REAL ()
Figure 20. P1dB Load Pull Output Power Contours (dBm)
Figure 21. P1dB Load Pull Efficiency Contours (%)
--1
--1
--2
IMAGINARY ()
IMAGINARY ()
--3
--2
15
E
15.5
--4
P
--5
14.5
12 13
12.5
11.5
--6
14
--40
--36
--3
E
--38
--34
--32
--30
--4
P
--5
--26
--28
--6
13.5
--24
--7
--7
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2.5
3
3.5
4
4.5
5
REAL ()
REAL ()
Figure 22. P1dB Load Pull Gain Contours (dB)
NOTE:
Power Gain
Drain Efficiency
2
Figure 23. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Linearity
Output Power
AFT18HW355SR6
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz
--1
--1
52
52.5
E
--3
53
--4
P
53.5
54
--5
54.5
55
--6
62
E
--3
60
70
--4
P
58
56
54
--5
--6
--7
58
64
66
68
--2
IMAGINARY ()
IMAGINARY ()
51.5
51
--2
--7
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
REAL ()
REAL ()
Figure 24. P3dB Load Pull Output Power Contours (dBm)
Figure 25. P3dB Load Pull Efficiency Contours (%)
--1
--1
--2
13
E
--3
IMAGINARY ()
IMAGINARY ()
--2
13.5
--4
P
--5
--6
12.5
11
10.5
10
12
--50
--3
--46
--4
E
--48
--36
--34
--44
--42
P
--40
--5
--38
--6
11.5
--7
--7
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
REAL ()
REAL ()
Figure 26. P3dB Load Pull Gain Contours (dB)
NOTE:
Figure 27. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT18HW355SR6
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT18HW355SR6
RF Device Data
Freescale Semiconductor, Inc.
13
AFT18HW355SR6
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
The R5 tape and reel option for AFT18HW355S part will be available for 2 years after release of AFT18HW355S. Freescale
Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the
2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT18HW355S in the R6
tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2013
 Initial Release of Data Sheet
1
Jan. 2013
 Typical Performance frequency table: updated values to show statistical broadband performance, p. 1
 Maximum Ratings table: added CW operation showing 25C maximum CW rating limitation, p. 2
 Functional Tests table: updated typical values to reflect 1880 MHz typical performance values from p. 1
Typical Performance frequency table, changed Power Gain minimum value from 42.0% to 45.0%, p. 3
 Load Mismatch table: updated VSWR output power rating to a higher 2--carrier W--CDMA value, p. 3
 Typical Performance table: added footnote 5 to align with data in table, p. 3
 Fig. 10, Peaking Side Load Pull Performance — Maximum P1dB Tuning: corrected VGSB from 1.45 Vdc to
1.7 Vdc, p. 8
 Fig. 11, Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning: corrected VGSB from
1.45 Vdc to 1.7 Vdc, p. 8
AFT18HW355SR6
RF Device Data
Freescale Semiconductor, Inc.
15
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E 2013 Freescale Semiconductor, Inc.
AFT18HW355SR6
Document Number: AFT18HW355S
Rev. 1, 1/2013
16
RF Device Data
Freescale Semiconductor, Inc.
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