Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment. • Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., 1990 MHz, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 23% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1930- 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S19060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S19060NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 218.8 1.25 W W/°C Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 12 W CW RθJC 0.80 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF5S19060NR1 MRF5S19060NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 225 μAdc) VGS(th) 2.5 — 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc) VGS(Q) — 3.8 — Vdc Drain- Source On - Voltage (VGS = 5 Vdc, ID = 2.25 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.25 Adc) gfs — 5 — S Crss — 1.5 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 14 16 dB Drain Efficiency ηD 21 23 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 12 -9 dB Pulse Peak Power (VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 μs, 1% Duty Cycle) Psat — 110 — W Video Bandwidth (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing = 1 MHz to VBW, Δ IM3<2dB) VBW — 35 — MHz Adjacent Channel Power Ratio Input Return Loss Typical RF Performance (50 ohm system) 1. Part is internally matched both on input and output. MRF5S19060NR1 MRF5S19060NBR1 2 RF Device Data Freescale Semiconductor Z11 VBIAS VSUPPLY R1 + R2 C1 C2 Z6 C3 + + + C4 C5 C6 Z9 Z10 R3 RF INPUT Z1 Z2 Z3 Z4 Z5 C7 Z7 Z8 C12 DUT C8 RF OUTPUT C9 C10 C11 Z12 C13 Z1 Z2* Z3* Z4* Z5 Z6 Z7 0.250″ x 0.083″ Microstrip 0.500″ x 0.083″ Microstrip 0.500″ x 0.083″ Microstrip 0.515″ x 0.083″ Microstrip 0.480″ x 1.000″ Microstrip 1.140″ x 0.080″ Microstrip 0.600″ x 1.000″ Microstrip Z8* Z9* Z10 Z11 Z12 PCB + + C14 C15 0.420″ x 0.083″ Microstrip 0.975″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.700″ x 0.080″ Microstrip 0.700″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning Figure 1. MRF5S19060NR1/NBR1 Test Circuit Schematic Table 6. MRF5S19060NR1/NBR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1 μF, 35 V Tantalum Capacitor TAJB105K35S AVX C2 10 pF 100B Chip Capacitor ATC100B10R0CT500XT ATC C3, C7, C12, C13 6.8 pF 100B Chip Capacitors ATC100B6R8CT500XT ATC C4, C5, C14, C15 10 μF, 35 V Tantalum Capacitors TAJD106K035S AVX C6 220 μF, 63 V Electrolytic Capacitor, Radial 2222- 136- 68221 Vishay C8 0.8 pF 100B Chip Capacitor ATC100B0R8BT500XT ATC C9 1.5 pF 100B Chip Capacitor ATC100B1R5BT500XT ATC C10 1.0 pF 100B Chip Capacitor ATC100B1R0BT500XT ATC C11 0.2 pF 100B Chip Capacitor ATC100B0R2BT500XT ATC R1, R2 10 kW, 1/4 W Chip Resistors CRCW12061002FKEA Vishay R3 10 W, 1/4 W Chip Resistors CRCW120610R0FKEA Vishay MRF5S19060NR1 MRF5S19060NBR1 RF Device Data Freescale Semiconductor 3 VGG VDD C3 R1 R2 C1 C2 C4 C5 R3 C8 C9 CUT OUT AREA C7 C6 C10 C14 C11 C12 C15 C13 MRF5S19060M Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19060NR1/NBR1 Test Circuit Component Layout MRF5S19060NR1 MRF5S19060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 23 ηD VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 14.4 14.2 Gps −35 IM3 IRL 14 22 −41 −47 13.8 ACPR 13.6 1900 1920 1960 1940 1980 −53 2020 2000 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 14.6 ηD, DRAIN EFFICIENCY (%) 24 IM3 (dBc), ACPR (dBc) 14.8 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg. 13.8 35 Gps VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, IM3 13.6 13.4 37 ηD 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IRL −31 13.2 13 1900 −37 ACPR 1920 1940 1960 −25 1980 2000 −43 2020 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 14 ηD, DRAIN EFFICIENCY (%) 39 IM3 (dBc), ACPR (dBc) 14.2 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 30 Watts Avg. IDQ = 1150 mA Gps, POWER GAIN (dB) 16 VDD = 28 Vdc f1 = 1960 MHz, f2 = 1962.5 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 950 mA 15 750 mA 14 550 mA 13 350 mA 12 −15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 17 VDD = 28 Vdc f1 = 1960 MHz, f2 = 1962.5 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 −25 −30 IDQ = 350 mA −35 1150 mA −40 950 mA −45 750 mA −50 550 mA −55 −60 10 1 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S19060NR1 MRF5S19060NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 54 VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −20 −25 3rd Order −30 −35 −40 5th Order −45 P3dB = 49.4 dBm (87 W) 53 Pout, OUTPUT POWER (dBm) −15 7th Order 51 P1dB = 48.65 dBm (73.3 W) Actual 50 49 48 47 VDD = 28 Vdc, IDQ = 750 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 46 −50 45 44 30 31 10 1 100 Ideal 52 −55 0.1 32 33 34 35 36 37 38 39 40 41 42 43 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 40 TC = −30_C ηD VDD = 28 Vdc, IDQ = 750 mA 25_C f1 = 1960 MHz, f2 = 1962.5 MHz 85_C 2−Carrier N−CDMA, 2.5 MHz Carrier 85_C IM3 Spacing, 1.2288 MHz Channel 25_C Bandwidth, PAR = 9.8 dB −30_C @ 0.01% Probability (CCDF) ACPR 85_C 25_C −30_C Gps −30_C 25_C 85_C 35 30 25 20 15 10 5 44 −10 −20 −30 −40 −50 −60 −70 IM3, (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) −10 −80 0 −90 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 16 16 −30_C 25_C 50 15 14 40 85_C 13 85_C VDD = 28 Vdc IDQ = 750 mA f = 1960 MHz 12 30 ηD 20 Gps 10 11 10 1 10 0 100 Gps, POWER GAIN (dB) 15 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 60 25_C TC = −30_C VDD = 32 V 14 13 28 V 12 11 10 30 24 V 50 IDQ = 750 mA f = 1960 MHz 70 90 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power MRF5S19060NR1 MRF5S19060NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 0 100 1.2288 MHz Channel BW −10 −20 1 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW −40 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 10 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 0.0001 0 2 4 6 8 10 −90 PEAK−TO−AVERAGE (dB) Figure 13. 2 - Carrier CCDF N - CDMA −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF5S19060NR1 MRF5S19060NBR1 RF Device Data Freescale Semiconductor 7 f = 1990 MHz Zload f = 1990 MHz f = 1930 MHz Zsource f = 1930 MHz Zo = 5 Ω VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg. f MHz Zsource Ω Zload Ω 1930 3.11 - j4.55 2.60 - j3.18 1960 3.06 - j4.38 2.50 - j2.85 1990 2.93 - j4.28 2.44 - j2.53 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF5S19060NR1 MRF5S19060NBR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF5S19060NR1 MRF5S19060NBR1 RF Device Data Freescale Semiconductor 9 MRF5S19060NR1 MRF5S19060NBR1 10 RF Device Data Freescale Semiconductor MRF5S19060NR1 MRF5S19060NBR1 RF Device Data Freescale Semiconductor 11 MRF5S19060NR1 MRF5S19060NBR1 12 RF Device Data Freescale Semiconductor MRF5S19060NR1 MRF5S19060NBR1 RF Device Data Freescale Semiconductor 13 MRF5S19060NR1 MRF5S19060NBR1 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 7 Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 9 - 11. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 12 - 14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 15 MRF5S19060NR1 MRF5S19060NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF5S19060NR1 MRF5S19060NBR1 Document Number: MRF5S19060N Rev. 7, 10/2008 16 RF Device Data Freescale Semiconductor