Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF5S19060N
Rev. 7, 10/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S19060NR1
MRF5S19060NBR1
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.
• Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA,
Pout = 12 Watts Avg., 1990 MHz, IS - 95 (Pilot, Sync, Paging, Traffic Codes
8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1930- 1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S19060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S19060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
218.8
1.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 12 W CW
RθJC
0.80
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 225 μAdc)
VGS(th)
2.5
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 750 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain- Source On - Voltage
(VGS = 5 Vdc, ID = 2.25 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.25 Adc)
gfs
—
5
—
S
Crss
—
1.5
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1987.5 MHz,
f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
16
dB
Drain Efficiency
ηD
21
23
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 12
-9
dB
Pulse Peak Power
(VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 μs,
1% Duty Cycle)
Psat
—
110
—
W
Video Bandwidth
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing =
1 MHz to VBW, Δ IM3<2dB)
VBW
—
35
—
MHz
Adjacent Channel Power Ratio
Input Return Loss
Typical RF Performance (50 ohm system)
1. Part is internally matched both on input and output.
MRF5S19060NR1 MRF5S19060NBR1
2
RF Device Data
Freescale Semiconductor
Z11
VBIAS
VSUPPLY
R1
+
R2
C1
C2
Z6
C3
+
+
+
C4
C5
C6
Z9
Z10
R3
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C7
Z7
Z8
C12
DUT
C8
RF
OUTPUT
C9
C10
C11
Z12
C13
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7
0.250″ x 0.083″ Microstrip
0.500″ x 0.083″ Microstrip
0.500″ x 0.083″ Microstrip
0.515″ x 0.083″ Microstrip
0.480″ x 1.000″ Microstrip
1.140″ x 0.080″ Microstrip
0.600″ x 1.000″ Microstrip
Z8*
Z9*
Z10
Z11
Z12
PCB
+
+
C14
C15
0.420″ x 0.083″ Microstrip
0.975″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.700″ x 0.080″ Microstrip
0.700″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 1. MRF5S19060NR1/NBR1 Test Circuit Schematic
Table 6. MRF5S19060NR1/NBR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1 μF, 35 V Tantalum Capacitor
TAJB105K35S
AVX
C2
10 pF 100B Chip Capacitor
ATC100B10R0CT500XT
ATC
C3, C7, C12, C13
6.8 pF 100B Chip Capacitors
ATC100B6R8CT500XT
ATC
C4, C5, C14, C15
10 μF, 35 V Tantalum Capacitors
TAJD106K035S
AVX
C6
220 μF, 63 V Electrolytic Capacitor, Radial
2222- 136- 68221
Vishay
C8
0.8 pF 100B Chip Capacitor
ATC100B0R8BT500XT
ATC
C9
1.5 pF 100B Chip Capacitor
ATC100B1R5BT500XT
ATC
C10
1.0 pF 100B Chip Capacitor
ATC100B1R0BT500XT
ATC
C11
0.2 pF 100B Chip Capacitor
ATC100B0R2BT500XT
ATC
R1, R2
10 kW, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 W, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
3
VGG
VDD
C3
R1
R2 C1 C2
C4 C5
R3
C8
C9
CUT OUT AREA
C7
C6
C10
C14
C11
C12
C15
C13
MRF5S19060M
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19060NR1/NBR1 Test Circuit Component Layout
MRF5S19060NR1 MRF5S19060NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
23
ηD
VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
14.4
14.2
Gps
−35
IM3
IRL
14
22
−41
−47
13.8
ACPR
13.6
1900
1920
1960
1940
1980
−53
2020
2000
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
14.6
ηD, DRAIN
EFFICIENCY (%)
24
IM3 (dBc), ACPR (dBc)
14.8
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg.
13.8
35
Gps
VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
IM3
13.6
13.4
37
ηD
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IRL
−31
13.2
13
1900
−37
ACPR
1920
1940
1960
−25
1980
2000
−43
2020
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
14
ηD, DRAIN
EFFICIENCY (%)
39
IM3 (dBc), ACPR (dBc)
14.2
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 30 Watts Avg.
IDQ = 1150 mA
Gps, POWER GAIN (dB)
16
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
950 mA
15
750 mA
14
550 mA
13
350 mA
12
−15
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
17
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two−Tone Measurements,
2.5 MHz Tone Spacing
−20
−25
−30
IDQ = 350 mA
−35
1150 mA
−40
950 mA
−45
750 mA
−50
550 mA
−55
−60
10
1
100
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
54
VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
−25
3rd Order
−30
−35
−40
5th Order
−45
P3dB = 49.4 dBm (87 W)
53
Pout, OUTPUT POWER (dBm)
−15
7th Order
51
P1dB = 48.65 dBm (73.3 W)
Actual
50
49
48
47
VDD = 28 Vdc, IDQ = 750 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
46
−50
45
44
30 31
10
1
100
Ideal
52
−55
0.1
32 33 34 35
36 37 38 39 40
41 42 43
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
40
TC = −30_C
ηD
VDD = 28 Vdc, IDQ = 750 mA
25_C
f1 = 1960 MHz, f2 = 1962.5 MHz
85_C
2−Carrier N−CDMA, 2.5 MHz Carrier
85_C
IM3
Spacing, 1.2288 MHz Channel
25_C
Bandwidth, PAR = 9.8 dB
−30_C
@ 0.01% Probability (CCDF)
ACPR
85_C
25_C
−30_C
Gps
−30_C
25_C
85_C
35
30
25
20
15
10
5
44
−10
−20
−30
−40
−50
−60
−70
IM3, (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−10
−80
0
−90
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
16
16
−30_C
25_C
50
15
14
40
85_C
13
85_C
VDD = 28 Vdc
IDQ = 750 mA
f = 1960 MHz
12
30
ηD
20
Gps 10
11
10
1
10
0
100
Gps, POWER GAIN (dB)
15
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
60
25_C
TC = −30_C
VDD = 32 V
14
13
28 V
12
11
10
30
24 V
50
IDQ = 750 mA
f = 1960 MHz
70
90
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF5S19060NR1 MRF5S19060NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
0
100
1.2288 MHz
Channel BW
−10
−20
1
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
10
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
0.0001
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
7
f = 1990 MHz
Zload
f = 1990 MHz
f = 1930 MHz
Zsource
f = 1930 MHz
Zo = 5 Ω
VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
3.11 - j4.55
2.60 - j3.18
1960
3.06 - j4.38
2.50 - j2.85
1990
2.93 - j4.28
2.44 - j2.53
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF5S19060NR1 MRF5S19060NBR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
9
MRF5S19060NR1 MRF5S19060NBR1
10
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
11
MRF5S19060NR1 MRF5S19060NBR1
12
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
13
MRF5S19060NR1 MRF5S19060NBR1
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
7
Oct. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 9 - 11. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 12 - 14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 15
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
15
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MRF5S19060NR1 MRF5S19060NBR1
Document Number: MRF5S19060N
Rev. 7, 10/2008
16
RF Device Data
Freescale Semiconductor