Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S19120N
Rev. 3, 3/2011
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF7S19120NR1
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1200 mA, Pout = 36 Watts Avg., f = 1990 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --38.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW
Output Power
• Pout @ 1 dB Compression Point ≃ 120 W CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
1930--1990 MHz, 36 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 1730--02
TO--270 WBL--4
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 120 W CW
Case Temperature 80°C, 36 W CW
RθJC
0.43
0.51
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2007, 2009, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.15
0.275
0.35
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.65
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
600
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
1.03
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 36 W Avg., f = 1990 MHz, Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
18
19.5
dB
Drain Efficiency
ηD
30
32
36
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
5.7
6.1
—
dB
ACPR
—
--38.5
--35.5
dBc
IRL
—
--10
--7
dB
1. Part internally matched both on input and output.
(continued)
MRF7S19120NR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 1930--1990 MHz Bandwidth
Video Bandwidth @ 120 W PEP Pout where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
20
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 36 W Avg.
GF
—
0.495
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 120 W CW
Φ
—
0.914
—
°
Delay
—
1.98
—
ns
Part--to--Part Insertion Phase Variation @ Pout = 120 W CW,
f = 1960 MHz, Six Sigma Window
∆Φ
—
33.9
—
°
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.016
—
dB/°C
∆P1dB
—
0.009
—
dB/°C
Average Group Delay @ Pout = 120 W CW, f = 1960 MHz
Output Power Variation over Temperature
(--30°C to +85°C)
MRF7S19120NR1
RF Device Data
Freescale Semiconductor
3
VSUPPLY
VBIAS
+
C4
R1
C1
R2
C2
Z1
Z2
Z3
Z4
Z5
Z7
Z8
Z9
Z10
Z11
Z12
RF
OUTPUT
C8
Z6
C7
DUT
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
C6
C3
R3
RF
INPUT
C5
0.084″ x 0.744″ Microstrip
0.084″ x 0.797″ Microstrip
0.362″ x 0.100″ Microstrip
0.612″ x 0.380″ Microstrip
1.000″ x 0.125″ Microstrip
1.000″ x 0.090″ Microstrip
0.880″ x 0.111″ Microstrip
Z8
Z9
Z10
Z11
Z12
PCB
C10
C11
0.880″ x 0.210″ Microstrip
0.730″ x 0.350″ Microstrip
0.440″ x 0.130″ Microstrip
0.084″ x 0.700″ Microstrip
0.084″ x 0.743″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
Figure 1. MRF7S19120NR1 Test Circuit Schematic
Table 6. MRF7S19120NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
0.01 μF Chip Capacitor
C1825C103J1GAC
Kemet
C3, C4, C8, C9
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C5, C6, C10, C11
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
11 pF Chip Capacitor
ATC100B110BT500XT
ATC
R1
1 KΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 KΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF7S19120NR1
4
RF Device Data
Freescale Semiconductor
C4
R1
C2
C3
R2
C5
C6
R3
C1
C8
CUT OUT AREA
C7
MRF7S19120N Rev. 3
C10
C11
C9
Figure 2. MRF7S19120NR1 Test Circuit Component Layout
MRF7S19120NR1
RF Device Data
Freescale Semiconductor
5
18.3
18.2
Gps, POWER GAIN (dB)
35
Gps
34
18.1
18
17.9
17.8
33
ηD
VDD = 28 Vdc, Pout = 36 W (Avg.), IDQ = 1200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
0
--1
--4
--2
17.6
17.5
17.4
1880
--0.5
--1.5
PARC
17.7
32
1920
--12
--16
--2.5
IRL
1900
--8
1940
1960
1980
2000
2020
--3
2040
--20
IRL, INPUT RETURN LOSS (dB)
36
PARC (dB)
18.4
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
44
Gps
17.2
43
17
42
16.8
16.6
16.4
41
VDD = 28 Vdc, Pout = 59 W (Avg.), IDQ = 1200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
16.2
15.6
1880
1900
1920
--2.5
--4
--3.5
IRL
15.8
0
--3
PARC
16
--2
1940
1960
1980
2000
2020
--8
--12
--4
--16
--4.5
--20
2040
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
17.4
45
ηD
PARC (dB)
17.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 36 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 59 Watts Avg.
19
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
1500 mA
18
Gps, POWER GAIN (dB)
--10
IDQ = 1800 mA
1200 mA
17
900 mA
16
15
600 mA
14
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
300
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
--30
IDQ = 600 mA
900 mA
350 mA
--40
1200 mA
--50
--60
1
1500 mA
100
10
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19120NR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
--30
--40
3rd Order
5th Order
--50
7th Order
--60
1
10
--10
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
IM7--U
--50
IM7--L
--60
1
400
100
VDD = 28 Vdc, Pout = 120 W (PEP), IDQ = 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
100
10
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
50
VDD = 28 Vdc, IDQ = 1200 mA
f = 1960 MHz, Input Signal PAR = 7.5 dB
Ideal
0
45
40
--1
--1 dB = 32.46 W
--2
35
--2 dB = 43.76 W
--3
30
Actual
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
--10
--3 dB = 57.64 W
--4
20
30
40
60
50
25
70
Pout, OUTPUT POWER (WATTS)
19
VDD = 28 Vdc, IDQ = 1200 mA, f = 1960 MHz
Single--Carrier W--CDMA, Input Signal PAR = 7.5 dB
ACPR @ ±5 MHz Offset in 3.84 MHz Integrated Bandwidth
--10
18
--20
Uncorrected, Upper and Lower
--30
DPD Corrected
No Memory Correction
--40
--50
--70
36
Gps
25_C
85_C
17
40
85_C
16
30
15
20
VDD = 28 Vdc
IDQ = 1200 mA
f = 1960 MHz
ηD
14
DPD Corrected
with Memory Correction
--60
60
--30_C
25_C 50
TC = --30_C
10
13
38
40
42
44
46
48
50
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
1
10
100
ηD, DRAIN EFFICIENCY (%)
0
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
0
300
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S19120NR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
19
IDQ = 1200 mA
f = 1960 MHz
Gps, POWER GAIN (dB)
18
17
16
15
14
13
28 V
VDD = 24 V
40
0
80
120
32 V
200
160
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
MRF7S19120NR1
8
RF Device Data
Freescale Semiconductor
f = 2040 MHz
Zo = 5 Ω
Zload
f = 1880 MHz
f = 2040 MHz
Zsource
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 36 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1880
2.195 -- j2.157
2.091 -- j0.905
1900
2.122 -- j2.019
2.012 -- j0.712
1920
2.054 -- j1.880
1.957 -- j0.515
1940
1.979 -- j1.747
1.912 -- j0.312
1960
1.922 -- j1.623
1.887 -- j0.089
1980
1.858 -- j1.500
1.848 + j0.121
2000
1.793 -- j1.380
1.819 + j0.327
2020
1.717 -- j1.255
1.789 + j0.540
2040
1.645 -- j1.112
1.761 + j0.756
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S19120NR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF7S19120NR1
10
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
RF Device Data
Freescale Semiconductor
11
MRF7S19120NR1
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
• Initial Release of Data Sheet
1
Jan. 2009
• Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent production test signal, p. 8
• Updated Fig. 16, Series Equivalent Source and Load Impedance, large signal Zsource impedance
parameters to better reflect measured values, p. 9
2
Dec. 2009
• Updated Charge Device Model ESD from Class IV to III to reflect actual Qual Report results, p. 2
• Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8
• Added AN1907, Solder Reflow Attach Method for High Power RF Devices in Plastic Packages and
AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to Product
Documentation, Application Notes, p. 13
• Added Electromigration MTTF Calculator availability to Product Software, p. 13
3
Mar. 2011
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
• Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
MRF7S19120NR1
RF Device Data
Freescale Semiconductor
13
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MRF7S19120NR1
Document Number: MRF7S19120N
Rev. 3, 3/2011
14
RF Device Data
Freescale Semiconductor