Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P2160H
Rev. 1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20160HR3
MRF8P20160HSR3
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.5
44.8
7.0
--29.8
1900 MHz
16.6
45.3
6.9
--30.1
1920 MHz
16.5
45.8
6.9
--30.6
1880--2025 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P20160HR3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 160 Watts CW
2025 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
15.3
44.0
6.8
--30.0
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20160HSR3
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1900 MHz
RθJC
0.75
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 116 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.1
0.27
0.5
Vdc
Characteristic
Off Characteristics (3)
On Characteristics (3)
Functional Tests (4,5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg.,
f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Gps
15.5
16.5
18.5
dB
ηD
43.5
45.8
—
%
PAR
6.4
6.9
—
dB
ACPR
—
--30.6
--28.5
dBc
Typical Broadband Performance (5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc,
Pout = 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.5
44.8
7.0
--29.8
1900 MHz
16.6
45.3
6.9
--30.1
1920 MHz
16.5
45.8
6.9
--30.6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
5. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P20160HR3 MRF8P20160HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc,
1880--1920 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
107
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
160
—
W
—
13
—
IMD Symmetry @ 40 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 37 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.01
—
dB/°C
∆P1dB
—
0.009
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
Typical Broadband Performance — 2025 MHz (1) (In Freescale 2025 Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA,
VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
15.3
44.0
6.8
--30.0
1. Measurement made with device in a Symmetrical Doherty configuration.
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
3
VGA
C20 C22
C8
C10
Z1
C1
R1
C2
C18
C16
CUT OUT AREA
C3
C5
C24
VDA
R2 C6
C4
C
C14
C15
P
C12
C26
C13
C17
R3 C7
C11
C19
C9
VDB
C25
MRF8P20160H
Rev. 1
C21 C23
VGB
Figure 2. MRF8P20160HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C12, C13
10 pF Chip Capacitors
ATC600F100JT250XT
ATC
C3
0.3 pF Chip Capacitor
ATC600F0R3BT250XT
ATC
C4, C5
1.1 pF Chip Capacitors
ATC600F1R1BT250XT
ATC
C6, C7, C18, C19
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C8, C9, C20, C21, C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10, C11
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C14, C15
2.0 pF Chip Capacitors
ATC600F2R0BT250XT
ATC
C16, C17
2.2 pF Chip Capacitors
ATC600F2R2BT250XT
ATC
C24, C25
220 μF, 50 V Electrolytic Capacitors
227CKS505M
Illinois Cap
C26
0.8 pF Chip Capacitor
ATC600F0R8BT250XT
ATC
R1
50 Ω, 4 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3
8.25 Ω, 1/4 W Chip Resistors
CRCW12068R25FKEA
Vishay
Z1
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
GCS351--HYB1900
Soshin
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8P20160HR3 MRF8P20160HSR3
4
RF Device Data
Freescale Semiconductor
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
5
47
46
16.5
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
16
15.5
45
Gps
15
PARC
--28
--10
--29
--13
14.5
--30
14
--31
IRL
13.5
--32
ACPR
13
1850
1875
1900
1925
1950
1975
2000
2025
--33
2050
--16
--19
--22
--25
--2.5
--3
--3.5
--4
--4.5
PARC (dB)
48
ηD
IRL, INPUT RETURN LOSS (dB)
49
ACPR (dBc)
Gps, POWER GAIN (dB)
18
V = 28 Vdc, P = 37 W (Avg.), IDQA = 550 mA
17.5 VDD = 1.6 Vdc, out
Single--Carrier W--CDMA
GSB
17
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 37 Watts Avg.
--20
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
IM7--L
IM7--U
--60 VDD = 28 Vdc, Pout = 40 W (PEP)
IDQA = 550 mA, VGSB = 1.6 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1900 MHz
--70
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
ηD
Gps, POWER GAIN (dB)
16
15
14
13
12
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
--1 dB = 16 W
17
--1
--2
Gps
--2 dB = 26 W
60
0
50
--10
40
ACPR
--3
30
--3 dB = 36 W
--4
--5
--6
20
VDD = 28 Vdc, IDQA = 550 mA
VGSB = 1.6 Vdc, f = 1900 MHz
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
0
20
40
60
--30
--40
10
--50
0
--60
PARC
80
--20
ACPR (dBc)
0
ηD, DRAIN EFFICIENCY (%)
18
100
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P20160HR3 MRF8P20160HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
1920 MHz
ACPR
1900 MHz
15
14
1880 MHz
1920 MHz
1
50
--10
40
20
Gps
1900 MHz
10
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
12
0
30
1880 MHz
13
60
0
300
100
10
--20
--30
--40
ACPR (dBc)
17
Gps, POWER GAIN (dB)
ηD
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
ηD, DRAIN EFFICIENCY (%)
18
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
18
Gain
15
--7
GAIN (dB)
IRL
9
--21
6
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 550 mA
VGSB = 1.6 Vdc
3
0
1660
1720
1780
1840
1900
1960
2020
2080
IRL (dB)
--14
12
--28
--35
--42
2140
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
10
100
0
--10
--30
Input Signal
0.1
0.01
0
2
4
6
--40
--50
--60
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQA = 550 mA
Max Pout (1)
f
MHz
Watts
dBm
Zsource
Ω
Zload
Ω
1880
98
49.9
5.14 -- j9.41
1.56 -- j5.24
1900
98
49.9
7.59 -- j9.88
1.58 -- j5.37
1920
97
49.9
8.90 -- j9.65
1.57 -- j5.48
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 11. Maximum Output Power — Doherty Load Pull Optimization for Carrier Side
VDD = 28 Vdc, IDQA = 550 mA
f
MHz
Max Eff. (1)
%
Zsource
Ω
Zload
Ω
1880
65.1
5.14 -- j9.41
3.04 -- j3.65
1900
64.6
7.59 -- j9.88
4.13 -- j2.87
1920
64.6
8.90 -- j9.65
4.12 -- j3.15
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Maximum Efficiency — Doherty Load Pull Optimization for Carrier Side
MRF8P20160HR3 MRF8P20160HSR3
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
56
Pout, OUTPUT POWER (dBm)
55
Ideal
54
1920 MHz
53
52
1880 MHz
51
Actual
50
1900 MHz
49
1900 MHz 1920 MHz
48
1880 MHz
47
46
45
26
27
28
29
30
32
31
33
34
35
36
37
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
1880
103
50.1
122
50.9
1900
104
50.2
120
50.8
1920
104
50.2
118
50.7
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
1880
P1dB
5.14 -- j9.41
1.65 -- j5.46
1900
P1dB
7.59 -- j9.88
1.67 -- j5.43
1920
P1dB
8.90 -- j9.65
1.66 -- j5.50
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATE CHARACTERIZATION — 2025 MHz
VGA
C8
C10
C22 C24
C20
C4
Z1
C1 C2
R1
C18*
C14
CUT OUT AREA
C3
C26
VGA
R2 C6
C5
C
C12
C16
C28
C15
C17
C13
P
C19*
R3
C11
C7
C21
C9
VGB
C27
MRF8P20160H
Rev. 1
C23 C25
VGB
* Stacked
Figure 14. MRF8P20160HR3(HSR3) Test Circuit Component Layout — 2025 MHz
Table 6. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values — 2025 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C6, C7, C12, C13,
C20, C21
15 pF Chip Capacitors
ATC600F150JT250XT
ATC
C3, C14, C15
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC
C4, C5
2.4 pF Chip Capacitors
ATC600F2R4BT250XT
ATC
C8, C9, C22, C23, C24, C25
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10, C11
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C16, C17
0.6 pF Chip Capacitors
ATC600F0R6BT250XT
ATC
C18, C19
1.1 pF Chip Capacitors
ATC600F1R1BT250XT
ATC
C26, C27
220 μF, 50 V Electrolytic Capacitors
227CKS505M
Illinois Cap
C28
0.8 pF Chip Capacitors
ATC600F0R8BT250XT
ATC
R1
50 Ω, 4 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3
8.25 Ω, 1/4 W Chip Resistors
CRCW12068R25FKEA
Vishay
Z1
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
GCS351--HYB1900
Soshin
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8P20160HR3 MRF8P20160HSR3
10
RF Device Data
Freescale Semiconductor
43
42
41
Gps
15.2
PARC
15.1
15
40
--29
--16
--30
--16.5
--31
IRL
14.9
--32
14.8
--33
ACPR
14.7
1995
2000
2005
2010
2015
2020
2025
2030
--17
--17.5
--18
--34
2035
--18.5
--2.5
--3
--3.5
--4
--4.5
PARC (dB)
15.6 V = 28 Vdc, P = 37 W (Avg.), I
DD
out
DQA = 550 mA
15.5 VGSB = 1.6 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth Input Signal
15.4 PAR = 9.9 dB @ 0.01% Probability on CCDF
15.3
IRL, INPUT RETURN LOSS (dB)
44
ηD
ACPR (dBc)
Gps, POWER GAIN (dB)
15.7
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 2025 MHz
--5
f, FREQUENCY (MHz)
Figure 15. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 20 Watts Avg.
15
0
50
--10
40
2025 MHz
ACPR
2010 MHz
14
ηD
60
13
30
20
2010 MHz
12
2025 MHz
10
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
11
1
--30
--40
--50
Gps
100
10
--20
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
16 Bandwidth
ηD, DRAIN EFFICIENCY (%)
17
0
300
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
18
15
--5
12
--10
9
--15
6
3
0
1850
IRL
--20
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 550 mA
VGSB = 1.6 Vdc
1900
1950
IRL (dB)
GAIN (dB)
Gain
--25
2000
2050
2100
2150
--30
2200
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF8P20160HR3 MRF8P20160HSR3
12
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
13
MRF8P20160HR3 MRF8P20160HSR3
14
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
RF Device Data
Freescale Semiconductor
15
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2010
• Initial Release of Data Sheet
1
July 2010
• Added part number MRF8P20160HR3 (NI--780--4), p. 1
• Corrected IDQ1A value from 554 to 550 mA in Thermal Characteristics table and changed thermal
resistance value from 0.95 to 0.75°C/W. Thermal value now reflects the use of the combined dissipated
power from the carrier amplifier and peaking amplifier, p. 2
• Changed VDS(on) values from 0.05 to 0.1 Min, 0.11 to 0.27 Typ and 0.15 to 0.5 Max. Revised numbers
reflect per side measurement versus previous combined measurements, p. 2
• Replaced Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout =
37 Watts Avg. to show a wider bandwidth capability, p. 6
• Replaced Fig. 15, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout =
20 Watts Avg. to show more detailed RF performance capability, p. 11
MRF8P20160HR3 MRF8P20160HSR3
16
RF Device Data
Freescale Semiconductor
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MRF8P20160HR3 MRF8P20160HSR3
Document
Number:
RF
Device
Data MRF8P2160H
Rev. 1, 7/2010
Freescale
Semiconductor
17