Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S21120H
Rev. 0, 5/2010
RF Power Field Effect Transistors
MRF8S21120HR3
MRF8S21120HSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
850 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.4
34.6
6.4
--37.5
2140 MHz
17.5
34.1
6.5
--38.0
2170 MHz
17.6
34.0
6.4
--37.6
2110--2170 MHz, 28 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW (1)
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465--06, STYLE 1
NI--780
MRF8S21120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S21120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW
94
0.44
W
W/°C
Symbol
Value (3,4)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 28 W CW, 28 Vdc, IDQ = 850 mA, 2140 MHz
Case Temperature 80°C, 120 W CW(1), 28 Vdc, IDQ = 850 mA, 2140 MHz
RθJC
0.53
0.51
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S21120HR3 MRF8S21120HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 172 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 850 mAdc, Measured in Functional Test)
VGG(Q)
4.0
5.2
7.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.72 Adc)
VDS(on)
0.1
0.16
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 28 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
17.0
17.6
20.0
dB
Drain Efficiency
ηD
32.5
34.0
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
5.9
6.4
—
dB
ACPR
—
--37.6
--36.0
dBc
IRL
—
--13
--8
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.4
34.6
6.4
--37.5
--22
2140 MHz
17.5
34.1
6.5
--38.0
--18
2170 MHz
17.6
34.0
6.4
--37.6
--13
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21120HR3 MRF8S21120HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
107 (1)
—
—
45
—
W
IMD Symmetry @ 80 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 28 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.015
—
dB/°C
∆P1dB
—
0.005(1)
—
dBm/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
3
R2
R1
VGG
VDD
C9
C3
C10
C5
C13
C7
C1
C4 C2
CUT OUT AREA
R3
C6
C8
C11
C12
MRF8S21120H
Rev. 1
Figure 1. MRF8S21120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S21120HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C6, C7, C8
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C2
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C4
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C5, C9, C10, C11, C12
10 μF, 50 V Chip Capacitors
C5750X5R1H106MT
TDK
C13
220 μF Electrolytic Capacitor
2222 120 18221
Vishay BC Components
R1, R2
2 KΩ, 1/4 W Chip Resistors
WCR12062K2FI
Welwyn
R3
10 Ω, 1/4 W Chip Resistor
232272461009
Phycomp
PCB
0.030″, εr = 2.55
AD255A
Arlon
MRF8S21120HR3 MRF8S21120HSR3
4
RF Device Data
Freescale Semiconductor
35
34
Gps
17.7
17.6
33
PARC
17.5
17.4
17.1
2060
2080
2100
--34
--6
--36
IRL
17.2
0
--35
ACPR
17.3
--33
2120
Input Signal PAR = 7.5 dB @ 0.01% --37
Probability on CCDF
--38
2140 2160 2180 2200 2220
--12
--18
--24
--30
--1.2
--1.3
--1.4
--1.5
PARC (dB)
Gps, POWER GAIN (dB)
17.9
36
IRL, INPUT RETURN LOSS (dB)
ηD
17.8
37
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 850 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
18
ACPR (dBc)
18.1
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--1.6
--1.7
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
--10
VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 850 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--U
--30
IM3--L
IM5--L
--40
IM5--U
--50
IM7--L
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
18
0
17
16
15
14
13
ηD
VDD = 28 Vdc, IDQ = 850 mA
f = 2140 MHz
60
--5
50
--15
ACPR
40
--1
--1 dB = 26 W
--2 dB = 36 W
--2
--3 dB = 48 W
--3
20
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
--4
--5
30
Gps
0
20
40
60
--35
--45
10
--55
0
--65
PARC
80
--25
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
100
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 850 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
17
2110 MHz
16
2140 MHz
0
50
--10
40
ACPR
2170 MHz
30
2170 MHz
15
20
Gps
2140 MHz
2110 MHz
14
10
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
13
1
--30
--40
--50
--60
0
300
100
10
--20
ACPR (dBc)
Gps, POWER GAIN (dB)
18
60
ηD
ηD, DRAIN EFFICIENCY (%)
19
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
18
Gain
15
--7
GAIN (dB)
9
--21
IRL
6
IRL (dB)
--14
12
--28
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 850 mA
3
0
1740
1840
1940
2040
2140
2240
2340
2440
--35
--42
2540
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S21120HR3 MRF8S21120HSR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 850 mA, Pout = 28 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2060
4.33 -- j7.00
1.85 -- j4.10
2080
4.30 -- j6.60
1.90 -- j3.90
2100
4.28 -- j6.40
1.95 -- j3.70
2120
4.24 -- j6.00
2.05 -- j3.45
2140
4.22 -- j5.80
2.09 -- j3.30
2160
4.22 -- j5.60
2.50 -- j3.05
2180
4.21 -- j5.20
2.70 -- j2.90
2200
4.20 -- j5.00
3.00 -- j2.70
2220
4.15 -- j4.80
3.20 -- j2.60
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 850 mA, Pulsed CW,
10 μsec(on), 10% Duty Cycle
58
57
Pout, OUTPUT POWER (dBm)
56
Ideal
55
54
53
Actual
2110 MHz
52
51
50
2140 MHz
49
2140 MHz
2110 MHz
2170 MHz
2170 MHz
48
47
29
30
31
32
33
34
35
36
37
38
39
40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2110
155
51.9
174
52.4
2140
158
52.0
186
52.7
2170
155
51.9
182
52.6
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2110
P1dB
3.73 -- j8.14
1.29 -- j3.01
2140
P1dB
4.93 -- j8.59
1.32 -- j3.16
2170
P1dB
7.50 -- j9.37
1.40 -- j3.28
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S21120HR3 MRF8S21120HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
9
MRF8S21120HR3 MRF8S21120HSR3
10
RF Device Data
Freescale Semiconductor
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
11
MRF8S21120HR3 MRF8S21120HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2010
Description
• Initial Release of Data Sheet
MRF8S21120HR3 MRF8S21120HSR3
RF Device Data
Freescale Semiconductor
13
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MRF8S21120HR3 MRF8S21120HSR3
Document Number: MRF8S21120H
Rev. 0, 5/2010
14
RF Device Data
Freescale Semiconductor