Data Sheet

Document Number: A2T21S160--12S
Rev. 0, 8/2015
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 38 W RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 2110 to 2170 MHz.
A2T21S160--12SR3
2100 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 600 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
18.2
33.6
6.8
–33.4
–18
2140 MHz
18.3
33.0
6.7
–33.3
–15
2170 MHz
18.4
32.9
6.7
–33.0
–13
2110–2170 MHz, 38 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
NI--780S--2L2L
4 VBW (1)
RFin/VGS 1
3 RFout/VDS
2 VBW (1)
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with VDD current
supplied through pin 2 and pin 4.
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2T21S160--12SR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
Symbol
Value (2,3)
Unit
RJC
0.30
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 73C, 38 W CW, 28 Vdc, IDQ = 600 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 151 Adc)
VGS(th)
1.4
1.8
2.2
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q)
2.2
2.6
3.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 38 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
17.7
18.4
20.7
dB
Drain Efficiency
D
31.1
32.9
—
%
PAR
6.3
6.7
—
dB
ACPR
—
–33.0
–30.9
dBc
IRL
—
–13
–7
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Part internally matched both on input and output.
(continued)
A2T21S160--12SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 600 mA, f = 2140 MHz
VSWR 10:1 at 32 Vdc, 190 W CW Output Power
(3 dB Input Overdrive from 140 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
140
—
W

—
–16.4
—

VBWres
—
90
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 38 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.011
—
dB/C
P1dB
—
0.009
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 5. Ordering Information
Device
A2T21S160--12SR3
Tape and Reel Information
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
Package
NI--780S--2L2L
A2T21S160--12SR3
RF Device Data
Freescale Semiconductor, Inc.
3
VDD
C5
VGG
C9
C4
C1
C10
C15
R1
C7
C17
C16
C8
R2
C2
CUT OUT AREA
C14
C13
C18
C3
C11
C12
VGG
C6
VDD
A2T21S160--12S
Rev. 1
D65896
Figure 2. A2T21S160--12SR3 Test Circuit Component Layout
Table 6. A2T21S160--12SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C7, C8, C10, C11, C14, C17
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C9
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C12
0.9 pF Chip Capacitor
ATC100B0R9BT500XT
ATC
C13, C18
0.1 pF Chip Capacitors
ATC600F0R1BT250XT
ATC
C15
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26-RH
Multicomp
C16
1.1 pF Chip Capacitor
ATC100B1R1BT500XT
ATC
R1, R2
3 , 1/4 W Chip Resistors
RC1206FR-073RL
Yageo
PCB
Rogers RO4350B, 0.020, r = 3.66
D65896
MTL
A2T21S160--12SR3
4
RF Device Data
Freescale Semiconductor, Inc.
18.5
18.4
33.5
D
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
33
Gps
–29
–9
18.2
–30
–12
18.1
–31
18.3
PARC
IRL
18
ACPR (dBc)
Gps, POWER GAIN (dB)
18.6
–32
–33
17.9
17.8
2060
ACPR
2080
2100
2120 2140 2160
f, FREQUENCY (MHz)
2180
2200
–15
–18
–21
–24
–34
2220
–3
–3.1
–3.2
–3.3
–3.4
PARC (dB)
18.7
IRL, INPUT RETURN LOSS (dBc)
35
VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 34.5
34
18.8
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
–3.5
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 38 Watts Avg.
0
VDD = 28 Vdc, Pout = 10 W (PEP)
IDQ = 600 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
–15
IM3--U
–30
IM3--L
IM5--L
–45
IM5--U
IM7--L
–60
–75
IM7--U
1
100
10
200
TWO--TONE SPACING (MHz)
18.4
0
18.2
18
17.8
17.6
17.4
VDD = 28 Vdc, IDQ = 600 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
Gps
–5
10
40
–30
D
–1 dB = 21 W
30
ACPR
–2 dB = 28 W
–3
–4
–28
35
–1
–2
45
25
–3 dB = 37 W
PARC
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
20
30
40
Pout, OUTPUT POWER (WATTS)
50
–32
–34
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
18.6
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–36
20
–38
15
60
–40
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T21S160--12SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
22
VDD = 28 Vdc, IDQ = 600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
50
–20
ACPR 40
2170 MHz
2110 MHz
2140 MHz
2170 MHz
2140 MHz
14
2110 MHz
16
12
30
2170 MHz
2140 MHz
2110 MHz
10
Pout, OUTPUT POWER (WATTS) AVG.
1
Gps
100
20
10
0
200
–25
–30
–35
ACPR (dBc)
18
10
–15
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
60
D
–40
–45
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
5
24
0
21
Gain
–5
--10
15
12
--15
IRL
9
6
1550
IRL (dB)
GAIN (dB)
18
1700
1850
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 600 mA
2000 2150 2300
f, FREQUENCY (MHz)
2450
2600
--20
--25
2750
Figure 7. Broadband Frequency Response
A2T21S160--12SR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 793 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.40 – j5.03
2.40 + j4.74
1.71 – j4.45
18.6
52.5
178
54.8
–14
2140
2.86 – j5.52
2.96 + j5.22
1.70 – j4.29
18.8
52.6
181
55.4
–15
2170
4.27 – j6.11
4.03 + j5.56
1.71 – j4.44
18.8
52.6
182
54.8
–15
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.40 – j5.03
2.33 + j5.03
1.72 – j4.68
16.3
53.3
214
56.3
–18
2140
2.86 – j5.52
2.96 + j5.56
1.71 – j4.64
16.4
53.3
216
56.1
–19
2170
4.27 – j6.11
4.13 + j6.04
1.72 – j4.67
16.5
53.3
215
55.9
–19
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 793 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.40 – j5.03
2.71 + j5.02
3.37 – j2.33
21.8
50.1
102
66.7
–21
2140
2.86 – j5.52
3.42 + j5.53
2.99 – j2.05
22.1
49.9
98
66.6
–22
2170
4.27 – j6.11
4.77 + j5.85
2.70 – j2.14
22.1
50.0
100
66.0
–23
Max Drain Efficiency
P3dB
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.37 – j2.33
19.8
50.8
120
68.0
–28
3.40 + j5.87
2.78 – j2.07
20.1
50.6
115
67.9
–31
4.90 + j6.17
2.70 – j2.14
20.1
50.7
116
67.4
–31
f
(MHz)
Zsource
()
Zin
()
2110
2.40 – j5.03
2.65 + j5.25
2140
2.86 – j5.52
2170
4.27 – j6.11
Zload
()
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2T21S160--12SR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz
1
1
0
0
50
56
54
58
60
–1
–2
48.5
49
E
49.5
–3
P
52.5
1
2
1.5
51.5
52
2.5
3.5
3
REAL ()
4.5
5
66
50
P
56
1.5
1
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 9. P1dB Load Pull Efficiency Contours (%)
1
1
23
0
22.5
–28
–1
22
–2
E
21.5
–3
21
20.5
–4
P
1
1.5
19.5
19
2
2.5
4
4.5
5
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
–20
–24
–30
–18
–2
E
–3
–16
–4
20
3
3.5
REAL ()
–1
–16
–22
–26
0
IMAGINARY ()
IMAGINARY ()
E
–3
–5
Figure 8. P1dB Load Pull Output Power Contours (dBm)
–5
64
–2
–4
51
4
62
–1
50
50.5
–4
–5
IMAGINARY ()
IMAGINARY ()
52
–5
P
–14
–14
1
1.5
2
2.5
3
REAL ()
3.5
4
4.5
5
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T21S160--12SR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz
1
1
0
0
–1
–1
52
58
56
60
–2
IMAGINARY ()
IMAGINARY ()
54
49.5
50
E
50.5
–3
–5
51
52.5
–4
53
P
1
2
1.5
2.5
4
3.5
3
REAL ()
E
62
52
4.5
5
1.5
1
60
P
2
2.5
4
3
3.5
REAL ()
58
4.5
5
Figure 13. P3dB Load Pull Efficiency Contours (%)
1
1
21
0
20.5
–1
20
–2
E
19.5
–3
19
P
1
1.5
17.5
17
2
2.5
4
–30
–26
–28
–2
–24
E
–22
–3
–4
18
3
3.5
REAL ()
–32
–1
–20
18.5
–4
–34
0
IMAGINARY ()
IMAGINARY ()
64
66
–3
–5
Figure 12. P3dB Load Pull Output Power Contours (dBm)
–5
–2
–4
51.5
52
62
4.5
5
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
–5
–18
P
1
1.5
2
2.5
3
REAL ()
3.5
4
4.5
5
Figure 15. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T21S160--12SR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
A2T21S160--12SR3
10
RF Device Data
Freescale Semiconductor, Inc.
A2T21S160--12SR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Aug. 2015
Description
 Initial Release of Data Sheet
A2T21S160--12SR3
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2015 Freescale Semiconductor, Inc.
A2T21S160--12SR3
Document
Number:Data
A2T21S160--12S
RF Device
Rev. Freescale
0, 8/2015
Semiconductor,
Inc.
13