Document Number: MW7IC2240N Rev. 1, 6/2011 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. Typical Performance • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., f = 2112.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 30 dB Power Added Efficiency — 14% ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power • Pout @ 1 dB Compression Point ≃ 40 Watts CW • Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts CW Pout. Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation (1) VGS2 VDS1 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2110--2170 MHz, 4 W Avg., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886--01 TO--270 WB--16 PLASTIC MW7IC2240NR1 CASE 1887--01 TO--270 WB--16 GULL PLASTIC MW7IC2240GNR1 CASE 1329--09 TO--272 WB--16 PLASTIC MW7IC2240NBR1 GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007, 2011. All rights reserved. RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +5 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 20 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 4 W CW (Pout = 3.95 W CW, Case Temperature = 68°C) 40 W CW (Pout = 39.4 W CW, Case Temperature = 80°C) °C/W RθJC Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA 3.9 1.3 Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA 3.2 1.2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 0 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) II (Minimum) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2 RF Device Data Freescale Semiconductor Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc) VGS(Q) — 2.9 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test) VGG(Q) 9.5 13 16.5 Vdc Ciss — 50 — pF Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc, Measured in Functional Test) VGG(Q) 7 9.8 12.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.2 0.39 1.2 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.67 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 205 — pF Characteristic Stage 1 — Off Characteristics Stage 1 — On Characteristics Stage 1 — Dynamic Characteristics (1) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Stage 2 — Off Characteristics Stage 2 — On Characteristics Stage 2 — Dynamic Characteristics (1) 1. Part internally matched both on input and output. (continued) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg., f = 2112.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 28 30 33 dB Power Added Efficiency PAE 12 14 — % ACPR — --50 --46 dBc IRL — --16 --12 dB Adjacent Channel Power Ratio Input Return Loss Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, 2110--2170 MHz Pout @ 1 dB Compression Point, CW P1dB Video Bandwidth @ 40 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands) VBW — 40 — — 10 — W MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg. GF — 0.1 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 40 W CW Φ — 1.08 — ° Delay — 1.98 — ns Part--to--Part Insertion Phase Variation @ Pout = 40 W CW, f = 2140 MHz, Six Sigma Window ∆Φ — 18.3 — ° Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.05 — dB/°C ∆P1dB — 0.004 — dB/°C Average Group Delay @ Pout = 40 W CW, f = 2140 MHz Output Power Variation over Temperature (--30°C to +85°C) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 4 RF Device Data Freescale Semiconductor + C23 VDD2 1 2 3 4 5 VDD1 C4 RF INPUT Z2 Z1 C6 Z3 VGG1 R1 10 11 NC R2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 C3 16 C5 C10 15 NC NC NC 7 NC 8 9 C2 DUT C12 C14 C19 C20 Z12 C8 14 6 C1 VGG2 NC Z4 Z5 Z6 Z7 C16 Z9 Z8 Z10 C9 C17 Z13 Quiescent Current Temperature Compensation Z11 RF OUTPUT C18 13 12 C11 C7 2.197″ x 0.083″ Microstrip 0.016″ x 0.083″ x 0.055″ Taper 0.106″ x 0.055″ Microstrip 0.409″ x 0.322″ Microstrip 0.161″ x 0.322″ Microstrip 0.254″ x 0.322″ Microstrip 0.388″ x 0.123″ Microstrip Z8 Z9 Z10 Z11 Z12, Z13 PCB C13 C15 C21 C22 0.204″ x 0.083″ Microstrip 0.273″ x 0.083″ Microstrip 0.176″ x 0.083″ Microstrip 0.364″ x 0.083″ Microstrip 0.564″ x 0.083″ Microstrip Arlon Cuclad 250GX--0300--55--22, 0.030″, εr = 2.5 Figure 3. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 8.2 pF Chip Capacitor ATC100B8R2BT250XT ATC C2, C16 0.4 pF Chip Capacitors ATC700B0R4BT500XT ATC C3, C14, C15 4.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L Murata C4, C5, C19, C20, C21, C22 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C6, C7, C10, C11 5.6 pF Chip Capacitors ATC100B5R6BT250XT ATC C8, C9 0.3 pF Chip Capacitors ATC700B0R3BT500XT ATC C12, C13 0.1 μF Chip Capacitors C1206C104K5RAC Kemet C17 0.6 pF Chip Capacitor ATC100B0R6BT250XT ATC C18 6.8 pF Chip Capacitor ATC100B6R8BT250XT ATC C23 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 5 C23 C10 C12 C14 C4 C19 C6 C7 C3 C1 R1 VGG1 C16 CUT OUT AREA C2 MW7IC2240N Rev. 2a C8 C9 C18 C17 C5 R2 C20 C21 C22 C11 C13 C15 Figure 4. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 6 RF Device Data Freescale Semiconductor 32 16 31.4 Gps 31.2 31 ACPR--L 30.6 30.4 13 --47 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) ACPR--U 30.8 14 VDD = 28 Vdc, Pout = 4 W (Avg.) IDQ1 = 90 mA, IDQ2 = 420 mA --48 --4 --49 --8 --50 --51 IRL 30.2 --52 30 2060 2080 2100 2120 2140 2160 2180 --20 --24 --53 2220 2200 --12 --16 IRL, INPUT RETURN LOSS (dB) 31.6 Gps, POWER GAIN (dB) 15 PAE ACPR (dBc) 31.8 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 25 31.4 PAE Gps, POWER GAIN (dB) 31.2 31 30.8 Gps 24 ACPR--U 30.6 30.4 ACPR--L 23 VDD = 28 Vdc, Pout = 10 W (Avg.) --38 IDQ1 = 90 mA, IDQ2 = 420 mA Single--Carrier W--CDMA 3.84 MHz --39 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) --40 --41 30.2 30 IRL --42 29.8 29.6 2060 --43 2080 2100 2120 2140 2160 2180 --4 --8 --44 2220 2200 --12 --16 --20 --24 IRL, INPUT RETURN LOSS (dB) 26 ACPR (dBc) 31.6 PAE, POWER ADDED EFFICIENCY (%) Figure 5. Power Gain, Input Return Loss, Power Added Efficiency and ACPR versus Frequency @ Pout = 4 Watts Avg. f, FREQUENCY (MHz) Figure 6. Power Gain, Input Return Loss, Power Added Efficiency and ACPR versus Frequency @ Pout = 10 Watts Avg. 34 33 IDQ2 = 630 mA 420 mA 31 30 315 mA 29 210 mA 28 VDD = 28 Vdc, IDQ1 = 90 mA f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing 27 26 1 10 IDQ1 = 135 mA 33 525 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 32 32 112.5 mA 31 90 mA 30 67.5 mA 29 28 45 mA 27 100 26 1 VDD = 28 Vdc, IDQ2 = 420 mA f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurement, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Two--Tone Power Gain versus Output Power @ IDQ1 = 90 mA Figure 8. Two--Tone Power Gain versus Output Power @ IDQ2 = 420 mA 100 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS --10 VDD = 28 Vdc, IDQ1 = 90 mA f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing IDQ2 = 210 mA --30 315 mA 630 mA --40 525 mA --50 --60 135 mA 1 --20 IDQ1 = 45 mA --30 67.5 mA --40 --50 --60 100 10 VDD = 28 Vdc, IDQ2 = 420 mA f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing 135 mA 1 Pout, OUTPUT POWER (WATTS) PEP Figure 9. Third Order Intermodulation Distortion versus Output Power @ IDQ1 = 90 mA Figure 10. Third Order Intermodulation Distortion versus Output Power @ IDQ2 = 420 mA --10 --30 3rd Order --50 5th Order 7th Order --60 10 1 IM7--U --50 IM5--L IM7--L --60 1 100 10 38 Ideal 48 Actual 47 46 VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 2140 MHz 44 13 14 15 16 17 Gps TC = --30_C --30_C 34 P1dB = 46.23 dBm (42 W) 45 50 36 P3dB = 57.22 dBm (52.76 W) 12 IM5--U Figure 12. Intermodulation Distortion Products versus Tone Spacing P6dB = 47.77 dBm (59.84 W) 11 --40 Figure 11. Intermodulation Distortion Products versus Output Power 50 43 IM3--L TWO--TONE SPACING (MHz) 52 49 IM3--U --30 Pout, OUTPUT POWER (WATTS) PEP 53 51 VDD = 28 Vdc, Pout = 40 W (PEP), IDQ1 = 90 mA IDQ2 = 420 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz --20 100 54 Pout, OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ1 = 90 mA IDQ2 = 420 mA, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) --10 --40 100 10 Pout, OUTPUT POWER (WATTS) PEP --20 112.5 mA 90 mA 18 19 20 21 30 45 40 35 30 85_C 25 28 20 26 24 VDD = 28 Vdc IDQ1 = 90 mA IDQ2 = 420 mA f = 2140 MHz PAE 22 20 22 85_C 25_C 32 25_C 1 10 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW Figure 13. Pulsed CW Output Power versus Input Power Figure 14. Power Gain and Power Added Efficiency versus CW Output Power 15 10 PAE, POWER ADDED EFFICIENCY (%) --20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) --10 5 100 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 32 31 30 29 28 27 32 25_C 30 85_C 28 26 25 32 V 28 V TC = --30_C 34 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 36 IDQ1 = 90 mA IDQ2 = 420 mA f = 2140 MHz IDQ1 = 90 mA IDQ2 = 420 mA Pout = 15 W VDD = 24 V 0 10 20 30 50 40 60 70 26 2060 80 2080 2100 2120 2140 2160 2180 2220 2200 Pout, OUTPUT POWER (WATTS) CW f, FREQUENCY (MHz) Figure 15. Power Gain versus Output Power Figure 16. Power Gain versus Frequency W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 17. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 18. Single--Carrier W--CDMA Spectrum MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 9 Zo = 50 Ω Zin f = 2060 MHz f = 2220 MHz f = 2220 MHz Zload f = 2060 MHz VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg. f MHz Zin Ω Zload Ω 2060 48.171 + j6.940 6.868 -- j9.687 2080 52.454 + j11.553 6.432 -- j8.942 2100 55.468 + j8.729 6.051 -- j8.216 2120 56.312 + j12.000 5.729 -- j7.545 2140 58.860 + j9.463 5.444 -- j6.869 2160 57.596 + j11.427 5.193 -- j6.201 2180 59.603 + j10.690 4.958 -- j5.578 2200 56.867 + j10.012 4.743 -- j4.969 58.144 + j9.805 4.577 -- j4.353 2220 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 19. Series Equivalent Input and Load Impedance MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 10 RF Device Data Freescale Semiconductor Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TA = 25°C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1500 0.452 134 0.356 7.81 0.001 --108 0.979 160 1550 0.407 117 0.757 --7.8 0.000 --67.7 0.969 157 1600 0.354 96.5 1.430 --31 0.000 --65.8 0.955 154 1650 0.316 85.1 2.330 --52.1 0.001 --27.1 0.935 151 1700 0.279 68 3.690 --73.6 0.001 --43.4 0.909 148 1750 0.222 49.5 5.800 --93.3 0.002 --21.9 0.878 143 1800 0.140 30.4 9.570 --113 0.003 --24.8 0.833 137 1850 0.046 21.9 17.000 --137 0.004 --33.7 0.737 124 1900 0.094 135 33.600 --173 0.007 --41.8 0.476 91.7 1950 0.238 56.4 58.300 124 0.009 --86.4 0.396 --79.7 2000 0.254 --29.2 47.800 59.5 0.006 --118 0.873 --149 2050 0.241 --84.1 34.300 22.9 0.004 --122 0.927 --171 2100 0.252 --120 27.700 --3.98 0.004 --125 0.911 --179 2150 0.201 --142 23.900 --28.2 0.003 --128 0.891 177 2200 0.174 --162 21.100 --51.8 0.003 --130 0.878 175 2250 0.148 168 18.800 --75.9 0.003 --131 0.872 175 2300 0.135 103 15.800 --100 0.003 --139 0.882 175 2350 0.197 35.4 12.600 --118 0.003 --155 0.906 174 2400 0.244 1.73 11.100 --132 0.002 --156 0.919 173 2450 0.291 --11.1 10.400 --147 0.002 --157 0.926 171 2500 0.340 --19 9.750 --163 0.002 --147 0.933 170 2550 0.391 --26.9 9.230 --179 0.001 --150 0.938 169 2600 0.435 --35.2 8.760 164 0.001 --144 0.942 168 2650 0.475 --44.4 8.290 146 0.001 --137 0.945 166 2700 0.455 --46 7.050 129 0.001 --90.2 0.950 166 2750 0.535 --60.2 6.690 112 0.001 --106 0.955 164 2800 0.571 --71.2 5.980 95.1 0.001 --103 0.955 163 2850 0.598 --82 5.170 78.5 0.002 --96.5 0.954 162 2900 0.623 --92.9 4.370 63.1 0.002 --103 0.955 162 2950 0.643 --102 3.690 48.7 0.002 --96.2 0.954 161 3000 0.668 --109 3.100 35.4 0.002 --106 0.951 161 3050 0.681 --116 2.580 22.7 0.002 --107 0.952 161 3100 0.694 --121 2.130 11 0.002 --87.9 0.957 160 3150 0.712 --124 1.760 --0.057 0.002 --96.1 0.959 160 3200 0.724 --127 1.440 --10.9 0.002 --99.6 0.959 160 3250 0.726 --130 1.170 --21.1 0.002 --82.4 0.962 159 3300 0.705 --130 0.928 --28.7 0.003 --66.9 0.963 159 3350 0.743 --132 0.780 --37 0.003 --77.2 0.959 158 3400 0.748 --135 0.652 --44.3 0.003 --88 0.955 157 3450 0.753 --137 0.555 --50.3 0.003 --78.6 0.955 156 (continued) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 11 Table 7. Common Source S--Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TA = 25°C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 3500 0.759 --140 0.486 --56.1 0.004 --81.1 0.954 155 3550 0.765 --144 0.440 --62.4 0.004 --82 0.946 154 3600 0.770 --148 0.401 --69.7 0.004 --85.9 0.941 153 3650 0.774 --153 0.370 --77.4 0.005 --96.4 0.941 151 3700 0.780 --159 0.338 --85.1 0.006 --94.9 0.940 150 3750 0.795 --164 0.306 --93.2 0.006 --99.3 0.933 148 3800 0.810 --170 0.273 --101 0.008 --110 0.928 146 3850 0.821 --175 0.239 --107 0.008 --113 0.934 145 3900 0.839 --178 0.207 --111 0.008 --112 0.936 144 3950 0.855 179 0.178 --114 0.008 --117 0.927 144 4000 0.862 176 0.156 --116 0.008 --123 0.935 144 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 13 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 14 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 15 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 16 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 17 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 18 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 19 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 20 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 21 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2007 • Initial Release of Data Sheet 1 June 2011 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 4 • Changed ESD Human Body Model rating from Class 1B to Class 0 to reflect recent ESD test results of the device, p. 2 • Fig. 17, MTTF versus Junction Temperature removed, p. 9. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. • Fig. 18, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 19, Single--Carrier W--CDMA Spectrum updated to show the undistorted input test signal, p. 9 (renumbered as Fig. 17 and Fig. 18 after Fig. 17 removed) • Added AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family, and AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to Product Documentation, Application Notes, p. 22 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 22 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 22 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007, 2011. All rights reserved. MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 Document RF DeviceNumber: Data MW7IC2240N Rev. 1, 6/2011 Freescale Semiconductor 23