Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S21150H
Rev. 1, 4/2009
RF Power Field Effect Transistors
MRF7S21150HR3
MRF7S21150HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1350 mA, Pout = 44 Watts Avg., Full Frequency Band, IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW
Output Power
• Pout @ 1 dB Compression Point w 150 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 44 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF7S21150HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S21150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 147 W CW
Case Temperature 75°C, 45 W CW
RθJC
0.33
0.37
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 348 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1350 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1350 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.4
6.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
590
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
320
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 44 W Avg., f = 2112.5 MHz and
f = 2167.5 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
17.5
19.5
dB
Drain Efficiency
ηD
29
31
—
%
PAR
5.7
6.1
—
dB
ACPR
—
- 37
- 35
dBc
IRL
—
- 15
-9
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S21150HR3 MRF7S21150HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 120 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
10
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 44 W Avg.
GF
—
0.418
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 150 W CW
Φ
—
36.5
—
°
Delay
—
2.82
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 150 W CW,
f = 2140 MHz, Six Sigma Window
ΔΦ
—
1.45
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.013
—
dB/°C
ΔP1dB
—
0.007
—
dBm/°C
Average Group Delay @ Pout = 150 W CW, f = 2140 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRF7S21150HR3 MRF7S21150HSR3
RF Device Data
Freescale Semiconductor
3
R1
VBIAS
VSUPPLY
Z28
+
R2
C6
Z30
C9
C8
C11
Z27
Z26
Z29
R3
Z25
RF
INPUT Z1
Z2 Z3
Z4
Z5
Z6 Z7
Z8
Z10
Z9
C1
Z11 Z12 Z13
Z15
Z16
Z17 Z18 Z19 Z20
C12
C5
C2
RF
Z21 Z22 Z23 Z24 OUTPUT
DUT
C4
Z31
Z14
C3
Z32
R4
C10
Z1
Z2
Z3
Z4*
Z5*
Z6
Z7
Z8
Z9
Z10
Z11
0.980″ x 0.138″ Microstrip
0.461″ x 0.066″ Microstrip
0.534″ x 0.458″ Microstrip
0.138″ x 0.126″ Microstrip
0.536″ x 0.126″ Microstrip
0.147″ x 0.126″ Microstrip
0.060″ x 0.513″ Microstrip
0.151″ x 0.630″ Microstrip
0.112″ x 0.630″ Microstrip
0.337″ x 0.957″ Microstrip
0.176″ x 0.957″ Microstrip
Z12
Z13
Z14
Z15*
Z16*
Z17*
Z18
Z19
Z20, Z21
Z22
Z23
C7
0.178″ x 0.067″ Microstrip
0.039″ x 0.095″ Microstrip
0.079″ x 0.060″ Microstrip
0.168″ x 0.095″ Microstrip
0.113″ x 0.095″ Microstrip
0.128″ x 0.095″ Microstrip
0.079″ x 0.215″ Microstrip
0.020″ x 0.095″ Microstrip
0.070″ x 0.215″ Microstrip
0.392″ x 0.067″ Microstrip
0.370″ x 0.089″ Microstrip
Z24
Z25
Z26
Z27
Z28
Z29, Z31
Z30, Z32
PCB
0.096″ x 0.138″ Microstrip
0.335″ x 0.066″ Microstrip
0.069″ x 0.080″ Microstrip
0.466″ x 0.040″ Microstrip
R = 0.526″ α = 60° Microstrip Butterfly
0.825″ x 0.066″ Microstrip
R = 0.526″ α = 60° Microstrip Butterfly
Taconic TLX8 - 0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 1. MRF7S21150HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21150HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
C2, C3
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C12
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C5
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C6, C7, C8
10 μF Chip Capacitors
C5750X5R1H106M
TDK
C9, C10
100 nF Chip Capacitors
C1206C104K2RAC
Kemet
C11
220 μF, 63 V Electrolytic Capacitor, Axial
222212018221
Vishay BC Components
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
R4
2.2 Ω, 1/4 W Chip Resistor
CRCW12062R20FKEA
Vishay
MRF7S21150HR3 MRF7S21150HSR3
4
RF Device Data
Freescale Semiconductor
VGS
C8
VDD
C6
R1
C9
R2
R3
MRF7S21150H/S
Rev. 7
C1
CUT OUT AREA
C4
C11
C2
C12 C5
C3
R4
C10
C7
Figure 2. MRF7S21150HR3(HSR3) Test Circuit Component Layout
MRF7S21150HR3 MRF7S21150HSR3
RF Device Data
Freescale Semiconductor
5
17.5
Gps
32
Gps, POWER GAIN (dB)
17
31
16.5
30
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1350 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
16
15.5
29
15
0
−4
−0.5
−8
−1
14.5
PARC
14
13.5
−1.5
2080
2100
2120
2140
2160
2180
−2.5
2220
2200
−16
−20
−2
IRL
13
2060
−12
−24
IRL, INPUT RETURN LOSS (dB)
33
ηD
PARC (dB)
18
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
42
17
Gps, POWER GAIN (dB)
41
ηD
16.5
40
39
Gps
16
38
VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1350 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
15.5
15
37
−3
14.5
14
−5
−2.5
PARC (dB)
17.5
PARC
13.5
13
2060
−3.5
2080
2100
2120
2140
2160
2180
−4.5
2220
2200
−15
−20
−4
IRL
−10
−25
IRL, INPUT RETURN LOSS (dB)
18
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 44 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 75 Watts Avg.
19
−10
18
1690 mA
17
1350 mA
16
1010 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
Gps, POWER GAIN (dB)
IDQ = 2020 mA
15
675 mA
14
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
13
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 675 mA
2020 mA
−40
1010 mA
1690 mA
−50
1350 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
300
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21150HR3 MRF7S21150HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1350 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
−50
3rd Order
−60
5th Order
7th Order
−70
1
10
100
0
VDD = 28 Vdc, Pout = 120 W (PEP), IDQ = 1350 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−10
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
−50
IM7−U
IM7−L
−60
1
300
10
80
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
45
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
Ideal
0
40
35
−1
−1 dB = 39.58 W
−2
30
−2 dB = 54.29 W
−3
25
Actual
−3 dB = 72.73 W
VDD = 28 Vdc, IDQ = 1350 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
−4
20
−5
20
30
40
50
60
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
70
15
80
Pout, OUTPUT POWER (WATTS)
19
VDD = 28 Vdc, IDQ = 1350 mA, f = 2140 MHz
Single−Carrier W−CDMA, Input Signal
PAR = 7.5 dB, ACPR @ ±5 MHz Offset in
3.84 MHz, Integrated Bandwidth
−35
−40
Uncorrected, Upper and Lower
−45 DPD Corrected
No Memory Correction
−50
−55
−60
Gps
18
TC = −30_C
25_C
85_C 50
25_C
17
40
85_C
16
30
15
20
14
DPD Corrected
with Memory Correction
−65
38
60
−30_C
VDD = 28 Vdc
IDQ = 1350 mA
f = 2140 MHz
ηD
10
13
40
42
44
46
48
50
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
1
10
100
ηD, DRAIN EFFICIENCY (%)
−30
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0
300
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21150HR3 MRF7S21150HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
108
18
17
MTTF (HOURS)
Gps, POWER GAIN (dB)
IDQ = 1350 mA
f = 2140 MHz
16
107
106
15
VDD = 24 V
14
0
100
28 V
32 V
105
200
300
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 44 W Avg., and ηD = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA IQ Magnitude Clipping,
Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21150HR3 MRF7S21150HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 2220 MHz
Zload
Zsource
f = 2060 MHz
f = 2060 MHz
f = 2220 MHz
VDD = 28 Vdc, IDQ = 1350 mA, Pout = 44 W Avg.
f
MHz
Zsource
W
Zload
W
2060
2.72 - j5.08
1.14 - j2.89
2080
3.10 - j5.17
1.11 - j2.75
2100
3.43 - j5.39
1.08 - j2.62
2120
3.66 - j5.74
1.04 - j2.50
2140
3.72 - j6.17
1.00 - j2.39
2160
3.59 - j6.59
0.96 - j2.28
2180
3.33 - j6.91
0.93 - j2.17
2200
2.98 - j7.10
0.89 - j2.05
2220
2.62 - j7.17
0.86 - j1.93
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21150HR3 MRF7S21150HSR3
RF Device Data
Freescale Semiconductor
9
61
60
59
58
57
62
61
Ideal
P6dB = 54.68 dBm (294 W)
P6dB = 55.47 dBm (352 W)
Ideal
60
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
P3dB = 54.05 dBm (254 W)
56
55
54
53
P1dB = 53.1 dBm
(200 W)
Actual
52
51
50
VDD = 28 Vdc, IDQ = 1350 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
32
33
34
35
36
37
38
39
40
41
42
P3dB = 54.94 dBm (311 W)
P1dB = 54.1 dBm
(257 W)
56
55
Actual
54
53
52
VDD = 32 Vdc, IDQ = 1350 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
51
50
49
31
59
58
57
43
32
33
34
35
36
37
38
39
40
41
42
43
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 32 V
Test Impedances per Compression Level
Test Impedances per Compression Level
P3dB
Zsource
Ω
Zload
Ω
4.66 - j8.05
0.53 - j2.26
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V
P3dB
Zsource
Ω
Zload
Ω
4.66 - j8.05
0.64 - j2.17
44
Figure 18. Pulsed CW Output Power
versus Input Power @ 32 V
MRF7S21150HR3 MRF7S21150HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
M
B
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF7S21150HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF7S21150HSR3
MRF7S21150HR3 MRF7S21150HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2007
• Initial Release of Data Sheet
1
Apr. 2009
• Corrected ESD structures to reflect current testing results. Changed HBM from 3A to 1C, p. 2
• Updated Fig. 14, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal, to better represent
production test signal, p. 8
MRF7S21150HR3 MRF7S21150HSR3
12
RF Device Data
Freescale Semiconductor
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MRF7S21150HR3 MRF7S21150HSR3
Document
Number:
RF
Device
Data MRF7S21150H
Rev. 1, 4/2009
Freescale
Semiconductor
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