Data Sheet

Document Number: AFT21H350W03S
Rev. 0, 9/2013
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 63 watt asymmetrical Doherty RF power LDMOS transistors are
designed for cellular base station applications requiring very wide
instantaneous bandwidth capability covering the frequency range of 2110 to
2170 MHz.
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 750 mA, VGSB = 0.7 Vdc, Pout = 63 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
2110 MHz
16.4
47.1
7.5
--26.0
2140 MHz
16.5
46.3
7.5
--27.9
2170 MHz
16.5
45.2
7.4
--30.1
Output PAR
(dB)
AFT21H350W03SR6
AFT21H350W04GSR6
2110–2170 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
ACPR
(dBc)
Features
 Advanced High Performance In--Package Doherty
 Designed for Wide Instantaneous Bandwidth Applications
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4S
AFT21H350W03SR6
NI--1230GS--4L
AFT21H350W04GSR6
Carrier
RFinA/VGSA 3
1 RFoutA/VDSA
(1)
2 RFoutB/VDSB
RFinB/VGSB 4
Peaking
(Top View)
Figure 1. Pin Connections
1. Pin connections 1 and 2 are DC coupled
and RF independent.
 Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +125
C
TJ
--40 to +225
C
CW
324
0.79
W
W/C
Operating Junction Temperature Range
(1,2)
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79C, 63 W CW, 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, 2140 MHz
Symbol
Value (2,3)
Unit
RJC
0.49
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage (5)
(VDS = 6 Vdc, ID = 146 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage (5)
(VDD = 28 Vdc, IDA = 750 mAdc, Measured in Functional Test)
VGS(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 4.0 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Gate Threshold Voltage (5)
(VDS = 6 Vdc, ID = 303 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 4.0 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Off Characteristics (4)
On Characteristics -- Side A (Carrier)
On Characteristics -- Side B (Peaking)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955
4. Side A and Side B are tied together for these measurements.
5. Each side of device measured separately.
.
(continued)
AFT21H350W03SR6 AFT21H350W04GSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2,3)
Functional Tests
(In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, Pout = 63 W Avg.,
f = 2110 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
15.5
16.4
18.5
dB
Drain Efficiency
D
43.6
47.1
—
%
PAR
7.0
7.5
—
dB
ACPR
—
--26.0
--24.1
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQA = 750 mA, f = 2140 MHz
VSWR 10:1 at 32 Vdc, 195 W CW Output Power
(3 dB Input Overdrive from 110 W CW Rated Power)
No Device Degradation
Typical Performances (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc,
2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
110
—
W
P3dB
—
400
—
W

—
40
—

VBWres
—
140
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.01
—
dB/C
P1dB
—
0.003
—
dB/C
Pout @ 3 dB Compression Point
(4)
AM/PM
(Maximum value measured at the P3dB compression point across the
2110 to 2170 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C)
1.
2.
3.
4.
VDDA and VDDB must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurements made with device in an asymmetrical Doherty configuration.
P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc.
3
VDDA
C18
VGGA
R2
C7
C16
C17
C5
R4
C9
C10
R1
C4
C2
P
CUT OUT AREA
C3
C11
C12
C13
R5
C6
D46604
C
C1
AFT21HW350
Rev. 8.1
C15
C14
C8
R3
VDDB
VGGB
C19
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. AFT21H350W03SR6 Test Circuit Component Layout
Table 5. AFT21H350W03SR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C2
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
C3, C4, C11, C12
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C5, C6, C14, C17
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C7, C8, C15, C16
10 F Chip Capacitors
GRM55DR61H106KA88L
Murata
C9
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C10, C13
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C18, C19
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
R1
51 , 1/2 W Chip Resistor
CRCW201051R0JNEF
Vishay
R2, R3
3.0 K, 1/4 W Chip Resistors
CRCW12063K00FKEA
Vishay
R4, R5
2.7 , 1/4 W Chip Resistors
CRCW12062R70FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.5
D46604
MTL
AFT21H350W03SR6 AFT21H350W04GSR6
4
RF Device Data
Freescale Semiconductor, Inc.
48
46
Gps
16.4
16.2
16
PARC
15.8
44
VDD = 28 Vdc, Pout = 63 W (Avg.)
IDQA = 750 mA, VGSB = 0.7 Vdc
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
42
--20
--2
--23
--2.2
15.6 ACPR
--26
15.4
--29
15.2
15
2060
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
2080
2100
2120
2140
--32
2160
2180
--2.4
--2.6
--2.8
--35
2220
2200
PARC (dB)
16.6
Gps, POWER GAIN (dB)
50
D
16.8
ACPR (dBc)
17
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50 VDD = 28 Vdc, Pout = 40 W (PEP)
IDQA = 750 mA, VGSB = 0.7 Vdc
--60
--70
IM7--L
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1
IM7--U
300
100
10
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
16.5
16
15.5
15
0
D
--1 dB = 18.6 W
--1
PARC
VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc
f = 2140 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
10
30
50
50
--15
30
Gps
--4
--5
--3 dB = 77.5 W
ACPR
--3
--10
40
--2 dB = 55.1 W
--2
60
70
90
20
--20
--25
ACPR (dBc)
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
17.5
1
D DRAIN EFFICIENCY (%)
18
--30
10
--35
0
--40
110
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
17
2110 MHz
2140 MHz
Gps
2170 MHz
2140 MHz
2170 MHz
16.5
2110 MHz
16
ACPR
15.5
D
14.5
1
--15
50
--25
40
30
VDD = 28 Vdc, IDQA = 750 mA
VGSB = 0.7 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
15
60
20
10
0
100 200
10
--35
--45
--55
ACPR (dBc)
2110 MHz
D, DRAIN EFFICIENCY (%)
17.5
--65
--75
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
20
GAIN (dB)
16
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 750 mA
VGSB = 0.7 Vdc
Gain
12
8
4
0
1700
1800
1900
2000
2100
2200
2300
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT21H350W03SR6 AFT21H350W04GSR6
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQA = 763 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
4.29 - j7.28
3.75 + j6.90
3.07 - j4.95
18.7
51.9
155
54.7
-12
2140
5.23 - j7.74
4.64 + j7.21
3.16 - j5.18
18.7
51.9
156
54.8
-13
2170
6.26 - j7.95
5.75 + j7.35
3.27 - j5.37
18.9
51.9
155
54.1
-13
Max Output Power
P3dB
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.18 - j5.59
16.5
52.8
189
57.1
-18
5.04 + j7.81
3.30 - j5.71
16.6
52.8
189
56.8
-19
6.44 + j7.94
3.40 - j5.88
16.7
52.7
187
56.2
-20
f
(MHz)
Zsource
()
Zin
()
2110
4.29 - j7.28
3.96 + j7.42
2140
5.23 - j7.74
2170
6.26 - j7.95
Zload
()
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 763 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
4.29 - j7.28
3.63 + j7.22
5.78 - j1.16
21.6
49.6
91
65.4
-22
2140
5.23 - j7.74
4.54 + j7.46
5.88 - j1.54
21.5
49.8
95
65.1
-21
2170
6.26 - j7.95
5.66 + j7.76
4.75 - j1.49
21.6
49.8
96
65.0
-23
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
2110
4.29 - j7.28
3.84 + j7.59
6.49 - j2.11
19.4
50.6
114
65.3
-28
2140
5.23 - j7.74
4.91 + j8.02
6.10 - j1.54
19.5
50.4
110
65.9
-30
2170
6.26 - j7.95
6.28 + j8.14
5.82 - j2.06
19.4
50.7
117
65.7
-29
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, VGSB = 0.7 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.76 - j5.24
2.87 + j5.85
2.36 - j4.99
14.4
54.7
292
54.6
-22
2140
3.54 - j5.55
3.73 + j6.27
2.61 - j5.09
14.6
54.7
292
55.0
-23
2170
5.02 - j5.82
5.01 + j6.41
2.80 - j5.30
14.6
54.6
288
53.5
-25
Max Output Power
P3dB
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.51 - j5.47
12.1
55.3
337
54.4
-28
4.25 + j6.63
2.77 - j5.62
12.3
55.3
336
53.9
-29
5.80 + j6.63
3.08 - j5.67
12.4
55.2
332
54.1
-31
f
(MHz)
Zsource
()
Zin
()
2110
2.76 - j5.24
3.16 + j6.20
2140
3.54 - j5.55
2170
5.02 - j5.82
Zload
()
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 10. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 0.7 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
2.76 - j5.24
2.36 + j6.00
3.43 - j2.05
15.8
52.8
189
66.0
-29
2140
3.54 - j5.55
3.08 + j6.45
3.22 - j2.11
15.9
52.8
191
65.9
-31
2170
5.02 - j5.82
4.19 + j6.80
3.07 - j2.13
15.9
52.8
190
65.0
-33
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
2110
2.76 - j5.24
2.74 + j6.36
3.71 - j2.53
13.7
53.7
233
65.3
-36
2140
3.54 - j5.55
3.67 + j6.84
3.57 - j2.44
13.8
53.6
231
65.1
-39
2170
5.02 - j5.82
5.15 + j7.06
3.45 - j2.52
13.8
53.7
234
64.3
-41
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT21H350W03SR6 AFT21H350W04GSR6
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2140 MHz
0
0
--2
--1
49
E
IMAGINARY ()
48
--1
IMAGINARY ()
48.5
49.5
--3
50
50.5
51
--4
51.5
--5
60
--4
--6
--6
--7
--7
3
2
62
--3
--5
P
4
5
6
7
9
8
64
E
--2
P
58
50 52
2
3
56
54
4
5
6
7
8
9
REAL ()
REAL ()
Figure 12. P1dB Load Pull Output Power Contours (dBm)
Figure 13. P1dB Load Pull Efficiency Contours (%)
0
0
22
--24
--1
21.5
E
--2
--3
IMAGINARY ()
IMAGINARY ()
--1
21
--4
20.5
--5
P
18
--6
--7
--28
--26
2
3
4
--18
--3
--4
--16
P
--14
--6
19
18.5
E
--2
--5
20
19.5
--20
--22
5
6
7
8
9
--7
2
3
4
5
6
7
8
REAL ()
REAL ()
Figure 14. P1dB Load Pull Gain Contours (dB)
Figure 15. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
9
Gain
Drain Efficiency
Linearity
Output Power
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2140 MHz
0
0
49.5
--1
49
50
--2
E
50.5
51
--3
IMAGINARY ()
IMAGINARY ()
--1
51.5
--4
52
--5
--7
3
4
--4
62
--6
52
2
64
--3
--5
52.5
P
--6
E
--2
5
6
7
--7
9
8
2
52
P
50
54 56
3
60
58
4
5
6
7
8
9
REAL ()
REAL ()
Figure 16. P3dB Load Pull Output Power Contours (dBm)
Figure 17. P3dB Load Pull Efficiency Contours (%)
0
--1
19.5
--2
18.5
--4
18
--5
--30
--28
E
--2
--26
--3
--24
--4
--22
--5
16
17.5
P
--6
--7
--32
E
19
--3
--34
--1
IMAGINARY ()
IMAGINARY ()
0
20
16.5
2
3
17
4
P
--6
5
6
7
8
9
--7
--20
--18
2
3
4
5
6
7
8
REAL ()
REAL ()
Figure 18. P3dB Load Pull Gain Contours (dB)
Figure 19. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
9
Gain
Drain Efficiency
Linearity
Output Power
AFT21H350W03SR6 AFT21H350W04GSR6
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
IMAGINARY ()
--2
--1
50.5
51
51.5
52
52.5
E
--3
53.5
--4
54.5
--5
64
--2
53
IMAGINARY ()
--1
54
P
--6
E
--3
62
--4
60
--5
--7
1.5
56
54
--6
53.5
54
2
2.5
3
3.5
4
4.5
--7
1.5
5.5
5
58
P
52
50
2
2.5
3
3.5
4
4.5
5
5.5
REAL ()
REAL ()
Figure 20. P1dB Load Pull Output Power Contours (dBm)
Figure 21. P1dB Load Pull Efficiency Contours (%)
--1
--1
--2
E
--3
IMAGINARY ()
IMAGINARY ()
--2
15.5
--4
15
14.5
--5
14
--6
--7
1.5
P
--32
--34
--36
--30
E
--28
--3
--26
--4
--24
--5
P
--22
--6
12.5
12
13
2
13.5
2.5
3
3.5
4
4.5
5.5
5
--7
1.5
2
2.5
3
3.5
4
4.5
5
5.5
REAL ()
REAL ()
Figure 22. P1dB Load Pull Gain Contours (dB)
Figure 23. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
--1
--1
52
51.5
--2
53
IMAGINARY ()
60
52.5
E
53.5
--3
54
54.5
--4
55
--5
P
--6
--7
1.5
2
2.5
--3
62
--4
60
--5
--6
3
3.5
64
E
IMAGINARY ()
--2
4
4.5
--7
1.5
5.5
5
2
P
56
50
52
2.5
3
58
54
3.5
4
4.5
5
5.5
REAL ()
REAL ()
Figure 24. P3dB Load Pull Output Power Contours (dBm)
Figure 25. P3dB Load Pull Efficiency Contours (%)
--1
--1
--2
--2
E
--3
IMAGINARY ()
IMAGINARY ()
E
13.5
--4
13
--5
12.5
P
--6
--7
1.5
10.5
10
11
2
2.5
3
3.5
4
4.5
5.5
5
--36
--3
--34
--4
--32
--5
--7
1.5
--30
P
--28
--6
12
11.5
--38
--40
--42
--26
2
2.5
3
3.5
4
4.5
5
5.5
REAL ()
REAL ()
Figure 26. P3dB Load Pull Gain Contours (dB)
Figure 27. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT21H350W03SR6 AFT21H350W04GSR6
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc.
13
AFT21H350W03SR6 AFT21H350W04GSR6
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RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
RF Device Data
Freescale Semiconductor, Inc.
15
AFT21H350W03SR6 AFT21H350W04GSR6
16
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Sept. 2013
Description
 Initial Release of Data Sheet
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RF Device Data
Freescale Semiconductor, Inc.
17
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E 2013 Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
Document Number: AFT21H350W03S
Rev. 0, 9/2013
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RF Device Data
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