Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2T26H160--24S
Rev. 0, 8/2014
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 2496 to
2690 MHz.
A2T26H160--24SR3
2600 MHz
 Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, Pout = 28 W Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz
15.7
48.2
7.9
–31.5
2590 MHz
16.3
47.9
7.9
–34.0
2690 MHz
16.4
48.1
7.5
–34.0
2496–2690 MHz, 28 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
 Advanced High Performance In--Package Doherty
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.
NI--780S--4L2L
6 VBWA(1)
Carrier
RFinA/VGSA 1
5 RFoutA/VDSA
RFinB/VGSB 2
4 RFoutB/VDSB
Peaking
3 VBWB(1)
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
TJ
–40 to +225
C
Operating Junction Temperature Range
(1,2)
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76C, 28 W W--CDMA, 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, 2590 MHz
RJC
0.56
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 60 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 350 mAdc, Measured in Functional Test)
VGS(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.6 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics (4)
On Characteristics – Side A (4) (Carrier)
On Characteristics – Side B (4) (Peaking)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes – AN1955.
4. Each side of device measured separately.
(continued)
A2T26H160--24SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.4 Vdc,
Pout = 28 W Avg., f = 2575 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
14.5
15.5
17.5
dB
Drain Efficiency
D
43.0
47.0
—
%
PAR
7.0
7.7
—
dB
ACPR
—
–31.0
–28.5
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Load Mismatch (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) IDQA = 350 mA, VGSB = 0.6 Vdc, f = 2590 MHz
No Device Degradation
VSWR 10:1 at 32 Vdc, 178 W Pulse Output Power
(3 dB Input Overdrive from 138 W Pulse Rated Power)
Typical Performance (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc,
2496–2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
138
—
W
Pout @ 3 dB Compression Point (3)
P3dB
—
178
—
W

—
–18
—

VBWres
—
140
—
MHz
Gain Flatness in 194 MHz Bandwidth @ Pout = 28 W Avg.
GF
—
0.7
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.009
—
dB/C
P1dB
—
0.009
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496–2690 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T26H160--24SR3
RF Device Data
Freescale Semiconductor, Inc.
3
VDDA
C20
VGGA
-A2T26H160--24S
Rev. 9
R4
C19
C1
C14
C17
C11
C13
R1
C5
C3
Z1
C4
R2
C7
C
C8
P
C9
C6
C10
D60817
CUT OUT AREA
R3
C16
C15
C2
R5
C12
C18
--
VGGB
C21
VDDB
Figure 2. A2T26H160--24SR3 Production Test Circuit Component Layout
Table 5. A2T26H160--24SR3 Production Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C8
9.1 pF Chip Capacitors
ATC600F9R1BT250XT
ATC
C7
6.8 pF Chip Capacitor
ATC600F6R8BT250XT
ATC
C9
0.2 pF Chip Capacitor
ATC600F0R2BT250XT
ATC
C10, C11, C12, C13
2.2 F Chip Capacitors
C3225X7R2A225K230AB
TDK
C14, C15, C16, C17, C18,
C19
10 F Chip Capacitors
C5750X7S2A106K230KE
TDK
C20, C21
220 F, 63 V Electrolytic Capacitors
SK063M0220B5S--1012
Yageo
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 4 W Chip Resistor
CW12010T0050GBK
ATC
R4, R5
1 K, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
Z1
2300–2700 MHz Band, 90, 2 dB Hybrid Coupler
X3C25P1--02S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D60817
MTL
A2T26H160--24SR3
4
RF Device Data
Freescale Semiconductor, Inc.
VDDA
C22
VGGA
--
R4
C21
C1
C16
C19
C9
R3
C15
C12
R1
C5
C3
Z1
C4
CUT OUT AREA
A2T26H160--24S
Rev. 7
C7
C
C8
P
C11
C10 R2
D57842
C17
C6
C18
C2
R5
C20
C14
--
C13
VGGB
C23
VDDB
Figure 3. A2T26H160--24SR3 Characterization Test Circuit Component Layout — 2496–2690 MHz
Table 6. A2T26H160--24SR3 Characterization Test Circuit Component Designations and Values — 2496–2690 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C7,
C8
9.1 pF Chip Capacitors
ATC600F9R1BT250XT
ATC
C9, C10, C11
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC
C12, C13, C14, C15
2.2 F Chip Capacitors
C3225X7R2A225K230AB
TDK
C16, C17, C18, C19, C20,
C21
10 F Chip Capacitors
C5750X7S2A106K230KB
TDK
C22, C23
220 F, 63 V Electrolytic Capacitors
SK063M0220B5S--1012
Yageo
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 4 W Chip Resistor
CW12010T0050GBK
ATC
R4, R5
1 K, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
Z1
2300–2700 MHz Band, 90, 2 dB Hybrid Coupler
X3C25P1--02S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D57842
MTL
A2T26H160--24SR3
RF Device Data
Freescale Semiconductor, Inc.
5
50
17.2
17
16.8
48
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQA = 350 mA, VGSB = 0.6 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
16.6
47
46
16.4
–30
–1.8
16.2
–31
–2
16
–32
PARC
15.8
–33
15.6
–34
15.4
2480
ACPR
Gps
2510
2540
2570
2600
2630
2660
ACPR (dBc)
Gps, POWER GAIN (dB)
49
D
–35
2720
2690
–2.2
–2.4
–2.6
PARC (dB)
17.4
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
–2.8
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28 Watts Avg.
–15
VDD = 28 Vdc, Pout = 13 W (PEP), IDQA = 350 mA
VGSB = 0.6 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2590 MHz
–25
–35
IM3–L
IM3–U
IM7–L
–45
IM5–L
–55
–65
–75
IM5–U
IM7–U
1
10
200
100
TWO–TONE SPACING (MHz)
16.4
0
16.2
16
15.8
15.6
15.4
VDD = 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, f = 2590 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
–1
–2
–5
–26
55
–28
50
–1 dB = 19.4 W
D
–3
–4
60
45
–2 dB = 27.5 W
Gps
–3 dB = 37 W
ACPR
12
40
–30
–32
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
16.6
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
–34
35
–36
30
–38
PARC
20
28
36
44
52
60
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak–to–Average Ratio
Compression (PARC) versus Output Power
A2T26H160--24SR3
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
2496 MHz
2590 MHz
16
14
60
0
50
–10
D
40
2590 MHz
2690 MHz
ACPR
2496 MHz
12
2690 MHz
2496 MHz
Gps
2590 MHz
10
1
10
20
10
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
8
30
100
0
200
–20
–30
–40
ACPR (dBc)
18
Gps, POWER GAIN (dB)
2690 MHz
VDD = 28 Vdc, IDQA = 350 mA
VGSB = 0.6 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
Bandwidth
D, DRAIN EFFICIENCY (%)
20
–50
–60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W–CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
17
GAIN (dB)
16
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 350 mA
VGSB = 0.6 Vdc
Gain
15
14
13
12
2300
2400
2500
2600
2700
2800
2900
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
A2T26H160--24SR3
RF Device Data
Freescale Semiconductor, Inc.
7
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 344 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
2496
7.14 – j16.1
7.84 + j15.2
2590
9.88 – j13.4
8.97 + j12.9
2690
9.36 – j9.75
8.30 + j9.00
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
10.6 – j14.6
18.0
48.1
64
53.7
–14
10.1 – j13.1
18.4
48.1
65
54.9
–15
10.7 – j15.6
18.3
48.0
63
53.8
–14
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
7.14 – j16.1
8.53 + j15.6
10.2 – j15.9
15.7
48.8
76
54.6
–18
2590
9.88 – j13.4
9.89 + j12.6
10.0 – j14.9
16.0
48.9
77
54.9
–19
2690
9.36 – j9.75
8.59 + j8.15
10.9 – j17.3
15.9
48.8
75
54.1
–19
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQA = 344 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
20.2 – j6.73
20.6
46.4
43
62.4
–19
8.83 + j12.5
14.8 – j4.10
21.0
46.4
44
63.0
–21
7.73 + j9.07
13.4 – j5.25
21.0
46.1
41
62.0
–20
f
(MHz)
Zsource
()
Zin
()
2496
7.14 – j16.1
8.14 + j15.1
2590
9.88 – j13.4
2690
9.36 – j9.75
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
2496
7.14 – j16.1
8.74 + j15.5
2590
9.88 – j13.4
9.78 + j12.1
2690
9.36 – j9.75
7.74 + j8.16
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
17.5 – j8.53
18.2
47.6
57
63.5
–26
13.5 – j4.23
19.0
47.1
52
64.0
–30
12.7 – j5.49
19.0
46.9
49
63.1
–30
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2T26H160--24SR3
8
RF Device Data
Freescale Semiconductor, Inc.
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
2496
7.60 – j18.3
7.68 + j19.7
2590
10.1 – j16.7
10.5 + j17.9
2690
11.6 – j11.2
12.8 + j11.3
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
9.04 – j14.6
13.1
50.5
113
54.8
–24
8.89 – j14.2
13.4
50.5
111
54.6
–27
9.69 – j16.8
13.4
50.4
110
54.0
–29
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
7.60 – j18.3
8.64 + j20.2
9.31 – j15.9
10.9
51.2
131
55.3
–30
2590
10.1 – j16.7
12.1 + j17.5
9.45 – j15.3
11.3
51.1
129
54.9
–33
2690
11.6 – j11.2
13.1 + j9.46
10.7 – j17.9
11.2
51.0
127
54.4
–35
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
15.2 – j5.96
14.3
49.0
79
66.1
–31
9.24 + j18.8
10.7 – j4.18
14.6
48.6
72
66.6
–35
12.7 + j13.2
9.18 – j7.22
14.6
48.6
72
65.9
–37
f
(MHz)
Zsource
()
Zin
()
2496
7.60 – j18.3
6.75 + j20.0
2590
10.1 – j16.7
2690
11.6 – j11.2
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
2496
7.60 – j18.3
7.82 + j20.5
2590
10.1 – j16.7
11.2 + j18.4
2690
11.6 – j11.2
13.4 + j10.8
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
15.3 – j7.51
12.2
49.7
94
66.3
–39
11.4 – j6.56
12.6
49.7
93
66.7
–43
9.86 – j8.35
12.6
49.5
88
65.8
–45
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2T26H160--24SR3
RF Device Data
Freescale Semiconductor, Inc.
9
P1dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
0
0
45
E
45.5
–15
47
–20
46
–25
5
46.5
–10
58
P
–15
–20
46.5
10
15
20
25
–25
30
56
54
46
5
10
48
52
50
15
20
25
30
REAL ()
REAL ()
Figure 9. P1dB Load Pull Output Power Contours (dBm)
Figure 10. P1dB Load Pull Efficiency Contours (%)
0
0
21.5
–5
20.5
–10
20
19.5
P
–15
19
18.5
–20
–26
–24
21.5
21
E
–5
IMAGINARY ()
IMAGINARY ()
46
P 48
60
62
47.5
–10
60
E
–5
IMAGINARY ()
IMAGINARY ()
–5
–22
E
–18
–20
–16
–10
P
–15
–14
–12
–20
–10
18
–25
5
10
15
20
25
30
–25
5
10
15
20
25
30
REAL ()
REAL ()
Figure 11. P1dB Load Pull Gain Contours (dB)
Figure 12. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T26H160--24SR3
10
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
0
0
62
46
E
47.5
–5
46.5
47
IMAGINARY ()
IMAGINARY ()
–5
–10
48
48.5
–15
E
P
60
62
–10
–15
58
P
56
–20
–20
–25
48
47 47.5
5
10
15
50
25
20
–25
30
10
5
54
52
50
15
20
25
30
REAL ()
REAL ()
Figure 13. P3dB Load Pull Output Power Contours (dBm)
Figure 14. P3dB Load Pull Efficiency Contours (%)
0
19.5
19
E
–5
18.5
–10
18
17.5
–15
P
–20
–25
17
10
15
–22
–10
–20
–15
–18
P
–20
15.5
5
–32
–24
–16
16.5
16
–26
–30 –28
E
–5
IMAGINARY ()
IMAGINARY ()
0
19.5
20
25
30
–25
5
10
15
20
25
30
REAL ()
REAL ()
Figure 15. P3dB Load Pull Gain Contours (dB)
Figure 16. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T26H160--24SR3
RF Device Data
Freescale Semiconductor, Inc.
11
P1dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
0
46.5 47
47.5
E
–5
48.5
–10
49
49.5
50
P
–15
66
64
–10
62
58
56
60
54
P
–15
52
50
–20
–20
–25
E
–5
IMAGINARY ()
IMAGINARY ()
0
48
0
10
5
15
–25
25
20
0
10
5
15
20
25
REAL ()
REAL ()
Figure 17. P1dB Load Pull Output Power Contours (dBm)
Figure 18. P1dB Load Pull Efficiency Contours (%)
0
0
E
–5
–38 –36
–34
–32
E
–5
–30
IMAGINARY ()
IMAGINARY ()
14.5
–10
14
P
–15
13.5
13
–20
–25
11 11.5
10.5
0
5
–28
P
–15
–26
–20
12.5
12
10
–10
–24
15
20
25
–25
0
5
10
15
20
REAL ()
REAL ()
Figure 19. P1dB Load Pull Gain Contours (dB)
Figure 20. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
25
Gain
Drain Efficiency
Linearity
Output Power
A2T26H160--24SR3
12
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
0
49
–5
E
–5
E
49.5
IMAGINARY ()
IMAGINARY ()
0
48.5
–10
50
–15
47 48
–20
–25
P
49
64
10
5
15
20
–15
–25
25
60 58
56
P
54
52
50
50.5
47.5 48.5 49.5
62
–10
–20
50
0
51
66
0
5
10
15
20
25
REAL ()
REAL ()
Figure 21. P3dB Load Pull Output Power Contours (dBm)
Figure 22. P3dB Load Pull Efficiency Contours (%)
0
0
12.5
–5
–46
–5
–10
12
–15
P
11
–20
8.5
–25
11.5
0
9.5
10
9
5
–34
–15
P
–32
–20
15
20
25
–36
–10
–30
10.5
10
–40
–38
E
IMAGINARY ()
IMAGINARY ()
E
–44
–42
–25
0
5
10
15
20
REAL ()
REAL ()
Figure 23. P3dB Load Pull Gain Contours (dB)
Figure 24. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
25
Gain
Drain Efficiency
Linearity
Output Power
A2T26H160--24SR3
RF Device Data
Freescale Semiconductor, Inc.
13
PACKAGE DIMENSIONS
A2T26H160--24SR3
14
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Aug. 2014
Description
 Initial Release of Data Sheet
A2T26H160--24SR3
16
RF Device Data
Freescale Semiconductor, Inc.
How to Reach Us:
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Home Page:
freescale.com
Web Support:
freescale.com/support
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All
other product or service names are the property of their respective owners.
E 2014 Freescale Semiconductor, Inc.
A2T26H160--24SR3
Document
Number: A2T26H160--24S
RF Device
Data
Rev. 0,Freescale
8/2014
Semiconductor,
Inc.
17
Similar pages