Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT26H160--4S4
Rev. 1, 11/2013
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 2496 to
2690 MHz.
AFT26H160--4S4R3
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 32 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz
14.9
45.7
8.0
--28.9
2570 MHz
15.4
45.6
7.9
--30.8
2690 MHz
15.1
44.5
7.8
--33.0
2496--2690 MHz, 32 W AVG., 28 V
Features
 Advanced High Performance In--Package Doherty
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
NI--880XS--4L4S
8 VBWA (1)
N.C.
1
RFinA/VGSA
2
7 RFoutA/VDSA
RFinB/VGSB
3
6 RFoutB/VDSB
4 Peaking
5 VBWB (1)
N.C.
Carrier
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with the VDD current
supplied through pin 5 and pin 8.
 Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT26H160--4S4R3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
TJ
--40 to +225
C
Operating Junction Temperature Range
(1,2)
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74C, 32 W W--CDMA, 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, 2590 MHz
RJC
0.41
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 80 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 500 mAdc, Measured in Functional Test)
VGS(Q)
1.5
1.8
2.3
Vdc
Drain--Source On--Voltage
(VGS = 6 Vdc, ID = 0.8 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 120 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage
(VGS = 6 Vdc, ID = 1.2 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics (4)
On Characteristics -- Side A (4) (Carrier)
On Characteristics -- Side B (4) (Peaking)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFT26H160--4S4R3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 32 W Avg.,
f = 2496 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
13.5
14.9
16.5
dB
Drain Efficiency
D
41.5
45.7
—
%
PAR
7.3
8.0
—
dB
ACPR
—
--28.9
--26.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQA = 500 mA, f = 2570 MHz
No Device Degradation
VSWR 10:1 at 32 Vdc, 160 W CW Output Power
(3 dB Input Overdrive from 100 W CW Rated Power)
Typical Performances (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc,
2496--2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
100
—
W
Pout @ 3 dB Compression Point (3)
P3dB
—
200
—
W

—
--30.1
—

VBWres
—
100
—
MHz
Gain Flatness in 194 MHz Bandwidth @ Pout = 32 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.01
—
dB/C
P1dB
—
0.009
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496--2690 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C)
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
AFT26H160--4S4R3
RF Device Data
Freescale Semiconductor, Inc.
3
VGSA
C23
C14
C20
C12
C16
C
P
R1
C1
C3
C17
R3
C5
CUT OUT AREA
R2
C2
Z1
C6
C18
C4
C9
C10
C7
C11
C8
C21
C19
C13
AFT26HP160--8S
Rev. 3
C15
C22
VGSB
Figure 2. AFT26H160--4S4R3 Test Circuit Component Layout
Table 5. AFT26H160--4S4R3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C11
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC
C2, C3, C4, C5, C6, C7, C8
8.2 pF Chip Capacitors
ATC600F8R2BT250XT
ATC
C9
0.4 pF Chip Capacitor
ATC600F0R4BT250XT
ATC
C10
5.6 pF Chip Capacitor
ATC600F5R6BT250XT
ATC
C12, C13, C14, C15
2.2 F Chip Capacitors
C3225X7R2A225K230AB
TDK
C16, C17, C18, C19, C20, C21
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C22, C23
220 F, 100 V Electrolytic Capacitors
MCGPR100V227M16X26-RH
Multicomp
R1
50 , 4 W Termination
CW12010T0050GBK
ATC
R2, R3
2.7 , 1/4 W Chip Resistors
CRCW12062R7FKEA
Vishay
Z1
2300--2700 MHz Band, 90, 5 dB Hybrid Coupler
X3C25P1-05S
Anaren
PCB
0.020, r = 3.5
RO4350B
Rogers
AFT26H160--4S4R3
4
RF Device Data
Freescale Semiconductor, Inc.
15.6
Gps, POWER GAIN (dB)
46
D
45
15.4
44
15.2
VDD = 28 Vdc, Pout = 32 W (Avg.)
IDQA = 500 mA, VGSB = 0.6 Vdc
Single--Carrier W--CDMA
15
14.8
43
Gps
PARC
14.6
14.4
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
14.2
14
2480
2510
2540
2570
2600
2660
--1.8
--29
--2
--30
--31
ACPR
2630
--28
--32
2690
--2.2
--2.4
--2.6
--33
2720
PARC (dB)
47
15.8
ACPR (dBc)
16
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.8
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 32 Watts Avg.
--10
VDD = 28 Vdc, Pout = 25 W (PEP), IDQA = 500 mA
VGSB = 0.6 Vdc, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 2570 MHz
IM3--U
--30
IM3--L
--40
IM5--L
IM5--U
--50
--60
IM7--U
IM7--L
1
10
200
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
14.5
14
13.5
13
--1 dB = 17.5 W
--1
D
--24
50
--26
ACPR
--2
40
--2 dB = 30 W
--3
30
Gps
--3 dB = 40 W
--4
20
VDD = 28 Vdc, IDQA = 500 mA
PARC
VGSB = 0.6 Vdc, f = 2570 MHz
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
--5
--6
60
10
25
40
55
70
--28
--30
ACPR (dBc)
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
15.5
0
D DRAIN EFFICIENCY (%)
16
--32
10
--34
0
--36
85
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT26H160--4S4R3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
2690 MHz 50
2496 MHz
40
2690 MHz
2496 MHz
15
VDD = 28 Vdc, IDQA = 500 mA
14.5 VGSB = 0.6 Vdc
Single--Carrier W--CDMA
14
ACPR
2496 MHz
13.5
2690 MHz
2570 MHz
1
10
30
20
10
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
13
60
D
100
0
200
0
--10
--20
--30
--40
ACPR (dBc)
2570 MHz
15.5
2570 MHz
Gps
D, DRAIN EFFICIENCY (%)
16
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
20
GAIN (dB)
16
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 500 mA
VGSB = 0.6 Vdc
Gain
12
8
4
0
2200
2300
2400
2500
2600
2700
2800
2900
3000
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT26H160--4S4R3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQA = 492 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
6.68 – j14.6
6.44 + j14.3
4.25 – j6.60
18.7
49.3
86
54.2
–12
2570
10.5 – j14.5
9.37 + j14.6
4.08 – j6.60
18.6
49.3
86
54.6
–13
2690
18.5 – j7.11
18.7 + j7.55
3.90 – j7.10
18.6
49.2
84
52.9
–12
Max Output Power
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
4.01 – j7.07
16.5
50.2
104
53.7
–17
10.4 + j15.8
3.85 – j7.11
16.3
50.1
103
53.5
–17
21.2 + j5.79
3.85 – j7.75
16.4
50.0
101
52.1
–17
f
(MHz)
Zsource
()
Zin
()
2496
6.68 – j14.6
6.75 + j15.3
2570
10.5 – j14.5
2690
18.5 – j7.11
Zload
()
(2)
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 492 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
9.14 – j4.04
21.0
47.6
58
62.8
–20
8.94 + j15.3
7.19 – j3.17
20.8
47.7
59
63.2
–21
19.1 + j8.75
5.76 – j3.49
20.8
47.6
58
61.6
–21
f
(MHz)
Zsource
()
Zin
()
2496
6.68 – j14.6
6.05 + j14.7
2570
10.5 – j14.5
2690
18.5 – j7.11
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
6.68 – j14.6
6.36 + j15.5
7.51 – j5.25
18.4
49.0
79
63.6
–25
2570
10.5 – j14.5
9.81 + j16.4
6.90 – j3.94
18.5
48.7
74
63.7
–27
2690
18.5 – j7.11
21.7 + j6.99
5.56 – j4.59
18.4
48.8
75
61.9
–26
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT26H160--4S4R3
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
4.34 – j16.2
4.65 + j15.8
6.04 – j9.43
13.5
51.0
126
53.4
26
2570
6.43 – j16.1
6.85 + j16.3
6.01 – j9.36
13.5
51.0
125
53.3
21
2690
15.7 – j11.8
15.8 + j12.5
6.40 – j10.4
13.4
50.9
122
51.6
25
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
2496
4.34 – j16.2
5.00 + j16.4
2570
6.43 – j16.1
7.70 + j17.1
2690
15.7 – j11.8
18.0 + j11.1
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
5.78 – j10.4
11.2
51.7
148
53.8
18
6.01 – j10.3
11.4
51.6
146
53.8
16
6.96 – j11.3
11.3
51.5
141
52.1
23
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 10. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
13.7 – j7.40
14.5
49.5
89
62.6
18
6.11 + j16.5
9.99 – j4.88
14.7
49.7
94
63.5
22
15.0 + j14.0
8.15 – j5.32
14.5
49.8
95
61.7
21
f
(MHz)
Zsource
()
Zin
()
2496
4.34 – j16.2
4.19 + j15.8
2570
6.43 – j16.1
2690
15.7 – j11.8
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
2496
4.34 – j16.2
4.56 + j16.4
13.7 – j8.25
12.5
50.1
102
62.1
9
2570
6.43 – j16.1
7.00 + j17.2
11.9 – j5.77
12.6
50.1
103
63.2
11
2690
15.7 – j11.8
17.5 + j12.7
8.15 – j5.47
12.5
50.3
108
61.5
12
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
AFT26H160--4S4R3
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2570 MHz
--2
--2
48
E
48.5
--4
--3
47
IMAGINARY ()
IMAGINARY ()
--3
--5
--6
47.5
P
--7
E
--4
62
--5
--6
P
--7
60
48
--8
--8
--9
49
3
4
5
6
7
8
--9
10
9
58
46
3
50 52
4
54
5
56
6
7
8
9
10
REAL ()
Figure 12. P1dB Load Pull Output Power Contours (dBm)
Figure 13. P1dB Load Pull Efficiency Contours (%)
--2
--2
--3
--3
E
19
--4
21
18.5
--5
IMAGINARY ()
IMAGINARY ()
REAL ()
--6
3
4
5
6
7
8
9
10
--22
--20
--4
--18
--5
--14
--6
--9
--16
P
--12
--8
20
--24
E
--7
19.5
18
--8
--9
20.5
P
--7
--26
3
4
5
6
7
8
9
REAL ()
REAL ()
Figure 14. P1dB Load Pull Gain Contours (dB)
Figure 15. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
10
Gain
Drain Efficiency
Linearity
Output Power
AFT26H160--4S4R3
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2570 MHz
--2
--2
48.5
--3
49
--4
E
48
49.5
--5
IMAGINARY ()
--3
IMAGINARY ()
47.5
--6
--7
--9
62
--5
--6
--7
P
--8
E
--4
50
--8
50
3
4
5
7
6
8
--9
10
9
P
60
52
54
48
58
56
3
4
5
6
7
8
9
10
REAL ()
Figure 16. P3dB Load Pull Output Power Contours (dBm)
Figure 17. P3dB Load Pull Efficiency Contours (%)
--2
--2
--3
--3
17
--4
E
16.5
19
--5
--6
16
--7
IMAGINARY ()
IMAGINARY ()
REAL ()
17.5
18
--8
--9
--26
--5
--24
--6
4
5
6
7
8
9
10
--9
--22
P
--18
--8
3
--28
E
--4
--7
18.5
P
--30
--32
--20
--16
3
4
5
6
7
8
9
REAL ()
REAL ()
Figure 18. P3dB Load Pull Gain Contours (dB)
Figure 19. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
10
Gain
Drain Efficiency
Linearity
Output Power
AFT26H160--4S4R3
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2570 MHz
--2
48.5
--4
E
50
--6
E
IMAGINARY ()
IMAGINARY ()
--4
--2
49
49.5
--8
50.5
P
--10
--12
60
--8
P
--10
58
56
--12
50
--14
62
--6
6
4
8
10
14
12
--14
16
46 48
4
6
50
8
54
52
10
14
12
16
REAL ()
REAL ()
Figure 20. P1dB Load Pull Output Power Contours (dBm)
Figure 21. P1dB Load Pull Efficiency Contours (%)
--2
--2
--4
--4
--36
--8
13.5
13
--10
--34
E
14.5
IMAGINARY ()
IMAGINARY ()
E
--6
P
--6
--32
--8
--30
P
--10
14
--12
--14
--12
12 12.5
4
6
--28
8
10
12
14
16
--14
4
6
8
10
12
14
16
REAL ()
REAL ()
Figure 22. P1dB Load Pull Gain Contours (dB)
Figure 23. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26H160--4S4R3
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2570 MHz
--2
--2
IMAGINARY ()
49.5
50
50.5
--6
--4
E
IMAGINARY ()
49
--4
51
--8
--10
P
--12
--14
46
62
--8
60
--10
P
--12
51.5
8
10
14
12
--14
16
4
58
52
50
48
6
4
E
--6
6
56
54
8
10
14
12
16
REAL ()
Figure 24. P3dB Load Pull Output Power Contours (dBm)
Figure 25. P3dB Load Pull Efficiency Contours (%)
--2
--2
--4
--4
E
--6
IMAGINARY ()
IMAGINARY ()
REAL ()
12.5
--8
11.5
--10
P
--44
E
--6
--42
--40
--8
--38
--10
P
12
--12
--14
--46
--36
--12
--32
11
4
6
8
10
12
14
16
--14
4
6
--34
8
10
12
14
16
REAL ()
REAL ()
Figure 26. P3dB Load Pull Gain Contours (dB)
Figure 27. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26H160--4S4R3
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT26H160--4S4R3
RF Device Data
Freescale Semiconductor, Inc.
13
AFT26H160--4S4R3
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2013
 Initial Release of Data Sheet
1
Nov. 2013
 Updated opening paragraph to reflect part performance, p. 1
AFT26H160--4S4R3
RF Device Data
Freescale Semiconductor, Inc.
15
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E 2013 Freescale Semiconductor, Inc.
AFT26H160--4S4R3
Document Number: AFT26H160--4S4
Rev.
16 1, 11/2013
RF Device Data
Freescale Semiconductor, Inc.
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