Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P26080H
Rev. 0, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P26080HR3
MRF8P26080HSR3
Designed for W--CDMA and LTE base station applications with frequencies
from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Volts, IDQA = 300 mA, VGSB = 1.3 Vdc, Pout = 14 Watts Avg., IQ
Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =
7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2570 MHz
15.4
39.1
6.8
--33.6
2595 MHz
15.2
38.2
6.8
--36.0
2620 MHz
15.0
36.9
6.8
--40.0
2500--2700 MHz, 14 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P26080HR3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 83 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P26080HSR3
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW
140
1.26
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 77°C, 14 W CW, 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2620 MHz
Case Temperature 90°C, 80 W CW(3), 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2620 MHz
RθJC
Value (1,2)
0.88
0.56
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 75 μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 300 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.75 Adc)
VDS(on)
0.1
0.23
0.3
Vdc
Characteristic
Off Characteristics
(4)
On Characteristics (4)
Functional Tests (5,6) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc,
Pout = 14 W Avg., f = 2620 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured on 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
13.8
15.0
16.8
dB
Drain Efficiency
ηD
34.0
36.9
—
%
PAR
6.4
6.8
—
dB
ACPR
—
--40.0
--33.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
(6) (In
Typical Broadband Performance
Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA,
VGSB = 1.3 Vdc, Pout = 14 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2570 MHz
15.4
39.1
6.8
--33.6
2595 MHz
15.2
38.2
6.8
--36.0
2620 MHz
15.0
36.9
6.8
--40.0
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P26080HR3 MRF8P26080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 300 mA,
VGSB = 1.3 Vdc, 2570--2620 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
54
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
83
—
W
—
40
—
IMD Symmetry @ 12 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 50 MHz Bandwidth @ Pout = 14 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.01
—
dB/°C
∆P1dB
—
0.002
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
1. Measurement made with device in a Symmetrical Doherty configuration.
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
3
C17
R2
C9
C11
VDA
C13
VGA
C1
C7
C3
CUT OUT AREA
Z1
R1
C4
C
P
C15
C10
MRF8S26080H
Rev. 3A
C16
C6
C8
C2
VGB
C5
C14
VDB
C12
R3
C18
Figure 2. MRF8P26080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P26080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C7, C8
22 pF Chip Capacitors
ATC600F220JT250XT
ATC
C9, C10
3.3 μF, 50 V Chip Capacitors
GRM32DR71H335KA88B
Murata
C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C13, C14
4.7 μF, 50 V Chip Capacitors
GRM31CR71H475KA12L
Murata
C15, C16
0.6 pF Chip Capacitors
ATC600F0R6BT250XT
ATC
C17, C18
330 μF, 35 V Electrolytic Capacitors
MCGPR35V337M10x16--RH
Multicomp
R1
50 Ω, 8 W Chip Resistor
060120A15Z50--2
Anaren
R2, R3
4.75 Ω, 1/4 W Chip Resistors
CRCW12064R75FNEA
Vishay
Z1
2500 MHz Band 90°, 3 dB Chip Hybrid Coupler
GSC356--HYB2500
Soshin
PCB
0.020″, εr = 3.5
RF35A2
Taconic
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P26080HR3 MRF8P26080HSR3
4
RF Device Data
Freescale Semiconductor
15
14.5
35
ηD
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
14
40
30
25
Gps
--25
--0.5
13
--30
--0.7
12.5
--35
13.5
ACPR
12
--40
11.5
PARC
--45
2690
--50
2730
11
2570
2590
2610
2630
2650
2670
2710
ACPR (dBc)
Gps, POWER GAIN (dB)
45
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQA = 300 mA, VGSB = 1.3 Vdc
15.5
--0.9
--1.1
PARC (dB)
16
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--1.3
--1.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 14 Watts Avg.
--20
IM3--L
--30
IM3--U
VDD = 28 Vdc, Pout = 12 W (PEP), IDQA = 300 mA
--40 V
GSB = 1.3 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2595 MHz
--50
--60
--70
IM5--U
IM5--L
IM7--L
1
IM7--U
10
100
TWO--TONE SPACING (MHz)
16
--1
15
14
13
12
11
VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc
f = 2595 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
--2
--3
60
--15
40
--2 dB = 20.5 W
--4
Gps
--3 dB = 26.5 W
--5
ACPR
--6
--10
50
ηD
--1 dB = 15.5 W
70
5
PARC
15
25
35
45
30
--20
--25
ACPR (dBc)
0
ηD, DRAIN EFFICIENCY (%)
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
--30
20
--35
10
55
--40
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
18
14
12
2570 MHz
2595 MHz
ACPR
--10
40
30
2620 MHz
20
10
VDD = 28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
8
6
50
1
10
10
0
100
--20
--30
--40
ACPR (dBc)
Gps, POWER GAIN (dB)
Gps
0
ηD
2595 MHz 2620 MHz
ηD, DRAIN EFFICIENCY (%)
2570 MHz
16
60
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
20
Gain
GAIN (dB)
16
12
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 300 mA
VGSB = 1.3 Vdc
8
4
0
2450
2500
2550
2600
2650
2700
2750
2800
2850
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
MRF8P26080HR3 MRF8P26080HSR3
6
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
4
3
6
5
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
10
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
VDD = 28 Vdc, IDQA = 300 mA
Max Pout (1)
VDD = 28 Vdc, IDQA = 300 mA
Max Eff. (1)
%
Zsource
Ω
Zload
Ω
f
MHz
Watts
dBm
Zsource
Ω
Zload
Ω
f
MHz
2570
50
47.0
15.3 -- j13.5
3.65 -- j6.25
2570
46.2
15.3 -- j13.5
6.67 -- j2.44
2595
51
47.1
17.4 -- j12.6
4.26 -- j5.53
2595
45.8
17.4 -- j12.6
6.34 -- j2.10
4.09 -- j5.62
2620
46.4
18.0 -- j10.3
6.16 -- j2.49
2620
49
46.9
18.0 -- j10.3
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 11. Carrier Side Load Pull Performance —
Maximum P1dB Tuning
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 12. Carrier Side Load Pull Performance —
Maximum Efficiency Tuning
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle
Pout, OUTPUT POWER (dBm)
52
Ideal
51
50
f = 2595 MHz
49
f = 2595 MHz
48
47
Actual
46
f = 2620 MHz
45
44
f = 2620 MHz
43
f = 2570 MHz
f = 2570 MHz
42
41
24
25
26
27
28
29
30
34
33
32
31
35
Pin, INPUT POWER (dBm)
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2570
50
47.0
61.7
47.9
2595
51
47.1
60.3
47.8
2620
49
46.9
60.3
47.8
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2570
P1dB
15.3 -- j13.5
3.65 -- j6.25
2595
P1dB
17.4 -- j12.6
4.26 -- j5.53
2620
P1dB
18.0 -- j10.3
4.09 -- j5.62
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P26080HR3 MRF8P26080HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
9
MRF8P26080HR3 MRF8P26080HSR3
10
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
11
MRF8P26080HR3 MRF8P26080HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8P26080H and MRF8P26080HS parts will be available for 2 years after release of
MRF8P26080H and MRF8P26080HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8P26080H and MRF8P26080HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2010
Description
• Initial Release of Data Sheet
MRF8P26080HR3 MRF8P26080HSR3
RF Device Data
Freescale Semiconductor
13
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MRF8P26080HR3 MRF8P26080HSR3
Document Number: MRF8P26080H
Rev. 0, 12/2010
14
RF Device Data
Freescale Semiconductor