NUP4302MR6

NUP4302MR6
Schottky Diode Array for
Four Data Line
ESD Protection
The NUP4302MR6 is designed to protect high speed data line
interface from ESD, EFT and lighting.
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Features
•
•
•
•
•
•
•
Very Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
ESD Rating of Class 3B (Exceeding 16 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model
IEC 61000−4−2 Level 4 ESD Protection
Flammability Rating: UL 94 V−0
Pb−Free Package is Available
PIN CONFIGURATION
AND SCHEMATIC
I/O 1
6 I/O
GND 2
5 VCC
4 I/O
1/O 3
Applications
•
•
•
•
MARKING
DIAGRAM
Ultra High−Speed Switching
USB 1.1 and 2.0 Power and Data Line Protection
Digital Video Interface (DVI)
Monitors and Flat Panel Displays
1
TSOP−6
CASE 318G
STYLE 12
67
M
G
67 M G
G
1
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NUP4302MR6T1
NUP4302MR6T1G
Package
Shipping †
TSOP−6
3000/Tape & Reel
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
NUP4302MR6/D
NUP4302MR6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
VBR
30
V
Forward Power Dissipation (TA = 25°C)
PF
225
mW
Forward Continuous Current
IF
200
mA
Junction Operating Temperature
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Rating
Peak Reverse Breakdown Voltage
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Reverse Breakdown Voltage
VBR
Conditions
Min
IR
VR = 25 V
Forward Voltage
VF
Forward Voltage
VF
Forward Voltage
Max
Unit
30
IR = 100 A
Reverse Leakage
Typ
V
30
A
IF = 0.1 mAdc
0.28
V
IF = 1.0 mAdc
0.35
V
VF
IF = 10 mAdc
0.45
V
Forward Voltage
VF
IF = 100 mAdc
1.00
V
Total Capacitance
CT
VR = 0 V, f = 1.0 MHz, I/O to Ground
VR = 0 V, f = 1.0 MHz, I/O to I/O
28
18
pF
Reverse Recovery Time
trr
IF = IR = 10 mA, IR(REC) = 1.0 mA (Figure 1)
5.0
ns
820 +10 V
2k
100 H
0.1 F
IF
tr
0.1 F
t
IF
trr
10%
DUT
50 OUTPUT
PULSE
GENERATOR
tp
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
VR
IR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
t
NUP4302MR6
IR, REVERSE CURRENT (A)
10,000
TA = 1 25°C
85°C
100
25°C
10
1
0
0.2
0.4
0.6
0.8
TA = 1 25°C
1000
85°C
100
10
25°C
1
0.1
1.0
0
5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Current as a Function of
Forward Voltage; Typical Values
25
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current as a Function of
Reverse Voltage; Typical Values
40
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
f = 1 MHz
TA = 25°C
35
30
25
20
15
10
5
0
0
5
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance as a Function of
Reverse Voltage; Typical Values
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3
30
30
NUP4302MR6
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
DIM
A
A1
b
c
D
E
e
L
HE
q
e
A
0.05 (0.002)
q
c
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 12:
PIN 1. I/O
2. GROUND
3. I/O
4. I/O
5. VCC
6. I/O
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
Email: [email protected]
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4
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For additional information, please contact your
local Sales Representative.
NUP4302MR6/D