Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
62mmC-Series模块采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管
62mmC-SeriesmodulewithTrench/FieldstopIGBT4andEmitterControlledHEdiode
初步数据/PreliminaryData
VCES = 1200V
IC nom = 200A / ICRM = 400A
典型应用
• 大功率变流器
• 电机传动
• UPS系统
• 风力发电机
TypicalApplications
• Highpowerconverters
• Motordrives
• UPSsystems
• Windturbines
电气特性
• 低开关损耗
• 无与伦比的坚固性
• VCEsat带正温度系数
ElectricalFeatures
• Lowswitchinglosses
• Unbeatablerobustness
• VCEsatwithpositivetemperaturecoefficient
机械特性
• 封装的CTI>400
• 高爬电距离和电气间隙
• 高功率密度
• 绝缘的基板
• 标准封装
• 预涂导热介质
MechanicalFeatures
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Highpowerdensity
• Isolatedbaseplate
• Standardhousing
• Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TH = 85°C, Tvj max = 175°C
IC nom 200
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
400
A
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 200 A, VGE = 15 V
IC = 200 A, VGE = 15 V
IC = 200 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
typ.
max.
1,75
2,00
2,05
2,15
V
V
V
5,80
6,40
V
栅极阈值电压
Gatethresholdvoltage
IC = 7,60 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
1,80
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
3,8
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
14,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,50
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 200 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,7 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,20
0,20
0,25
0,27
µs
µs
µs
0,045
0,05
0,055
µs
µs
µs
0,50
0,60
0,62
µs
µs
µs
0,10
0,16
0,18
µs
µs
µs
Eon
10,0
15,0
17,0
mJ
mJ
mJ
IC = 200 A, VCE = 600 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,7 Ω
Tvj = 150°C
Eoff
17,0
26,0
29,0
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
800
A
???
Thermalresistance,junctiontoheatsink
每个IGBT/perIGBT
validwithIFXpre-appliedthermalinterfacematerial
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
RthJH
Tvj op
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
2
0,162 K/W
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
200
A
IFRM
400
A
I²t
7800
7400
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,15
VF
1,65
1,65
1,65
IF = 200 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
230
250
260
A
A
A
恢复电荷
Recoveredcharge
IF = 200 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
20,0
32,0
45,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 200 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
9,00
16,0
17,5
mJ
mJ
mJ
???
Thermalresistance,junctiontoheatsink
每个二极管/perdiode
validwithIFXpre-appliedthermalinterfacematerial
RthJH
正向电压
Forwardvoltage
IF = 200 A, VGE = 0 V
IF = 200 A, VGE = 0 V
IF = 200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
3
V
V
V
0,203 K/W
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL 4,0
kV
Cu
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
29,0
23,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
23,0
11,0
mm
> 400
相对电痕指数
Comperativetrackingindex
CTI
min.
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TH=25°C,每个开关/perswitch
储存温度
Storagetemperature
0,01
K/W
LsCE
20
nH
RCC'+EE'
0,70
mΩ
-40
TBPmax
模块安装的安装扭距
Mountingtorqueformodulmounting
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
重量
Weight
G
Lagerung und Transport von Modulen mit TIM => AN2012-07
Storage and shipment of modules with TIM => AN2012-07
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
4
max.
RthCH
Tstg
最高基板工作温度
Maximumbaseplateoperationtemperature
typ.
340
125
°C
125
°C
6,00
Nm
5,0
Nm
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
400
400
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
320
320
280
280
240
240
200
200
160
160
120
120
80
80
40
40
0
0,0
0,5
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
360
IC [A]
IC [A]
360
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.7Ω,RGoff=2.7Ω,VCE=600V
400
60
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
360
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
55
50
320
45
280
40
35
E [mJ]
IC [A]
240
200
30
25
160
20
120
15
80
10
40
0
5
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
5
0
40
80
120 160 200 240 280 320 360 400
IC [A]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=200A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
110
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
100
90
ZthJH : IGBT
80
0,1
ZthJH [K/W]
E [mJ]
70
60
50
40
0,01
30
20
i:
1
2
3
4
ri[K/W]: 0,0098
0,0318 0,096 0,0244
τi[s]:
0,000335 0,0157 0,0746 0,632
10
0
0
3
6
9
12
15
RG [Ω]
18
21
24
0,001
0,001
27
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.7Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
450
400
IC, Modul
IC, Chip
400
360
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
320
350
280
300
IF [A]
IC [A]
240
250
200
200
160
150
120
100
80
50
0
40
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
6
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=2.7Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=200A,VCE=600V
25
25
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
15
15
E [mJ]
20
E [mJ]
20
10
10
5
5
0
0
50
100
150
200
IF [A]
250
300
350
0
400
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
1
ZthJH : Diode
ZthJH [K/W]
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,017
0,0478 0,1056 0,0326
τi[s]:
0,000288 0,0127 0,065 0,79
0,001
0,001
0,01
0,1
t [s]
1
10
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
7
0
3
6
9
12
15
RG [Ω]
18
21
24
27
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
接线图/Circuitdiagram
封装尺寸/Packageoutlines
In fin e o n
preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF200R12KE4P
初步数据
PreliminaryData
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
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preparedby:AKB
dateofpublication:2016-04-04
approvedby:MK
revision:V2.0
9
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