Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2V09H300--04N
Rev. 0, 2/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
A2V09H300--04NR3
This 79 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 720 to
960 MHz.
900 MHz
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQA = 400 mA, VGSB = 1.2 Vdc, Pout = 79 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.8
55.1
7.2
–32.7
940 MHz
19.7
55.9
7.1
–33.4
960 MHz
19.5
56.1
6.7
–33.9
720–960 MHz, 79 W AVG., 48 V
AIRFAST RF POWER LDMOS
TRANSISTOR
OM--780--4L
PLASTIC
800 MHz
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQA = 400 mA, VGSB = 1.0 Vdc, Pout = 79 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
790 MHz
18.4
55.0
7.6
–25.0
806 MHz
18.9
56.0
8.0
–28.0
821 MHz
18.1
53.0
8.0
–32.0
Features
 Advanced High Performance In--Package Doherty
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
Carrier
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
Peaking
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
A2V09H300--04NR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +105
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
55, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
(1,2)
TJ
–40 to +225
C
Characteristic
Symbol
Value (2,3)
Unit
RJC
0.34
C/W
Operating Junction Temperature Range
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 76C, 79 W Avg., W--CDMA, 48 Vdc, IDQA = 400 mA,
VGSB = 1.2 Vdc, 940 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 48 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 90 Adc)
VGS(th)
1.3
1.8
2.3
Vdc
Gate Quiescent Voltage
(VDD = 48 Vdc, ID = 400 mAdc, Measured in Functional Test)
VGSA(Q)
2.0
2.4
3.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.9 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 140 Adc)
VGS(th)
1.3
1.8
2.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Characteristic
Off
Characteristics (4)
On Characteristics -- Side A, Carrier
On Characteristics -- Side B, Peaking
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
(continued)
A2V09H300--04NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Tests (1,2)
Functional
(In Freescale Doherty Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.2 Vdc,
Pout = 79 W Avg., f = 940 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
19.1
19.7
21.1
dB
Drain Efficiency
D
50.0
55.9
—
%
PAR
6.5
7.1
—
dB
ACPR
—
–33.4
–30.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 400 mA, VGSB = 1.2 Vdc, f = 940 MHz, 12 sec(on),
10% Duty Cycle
VSWR 10:1 at 50 Vdc, 319 W Pulsed CW Output Power
(3 dB Input Overdrive from 223 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.2 Vdc,
920–960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
223
—
W
(3)
P3dB
—
400
—
W
AM/PM
(Maximum value measured at the P3dB compression point across
the 920--960 MHz frequency range)

—
–12.3
—

VBWres
—
70
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 79 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.004
—
dB/C
P1dB
—
0.012
—
dB/C
Pout @ 3 dB Compression Point
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C)
Table 6. Ordering Information
Device
A2V09H300--04NR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
Package
OM--780--4L
1. Part internally input matched.
2. Measurement made with device in an asymmetrical Doherty configuration.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2V09H300--04NR3
RF Device Data
Freescale Semiconductor, Inc.
3
VGGA
C9
C5
C1
C15
VDDA
C28
C16
C13
C27
R3
C7
Z1
C8
C4
D70167 C2
R1
C12
P
C26
C25
C
CUT OUT AREA
C11
C3
C24
R2
C19 C20
C23
C21
C22
C14
C6
C10
VGGB
A2V09H300
Rev. 0
C17
C18
C29
VDDB
Figure 2. A2V09H300--04NR3 Test Circuit Component Layout
Table 7. A2V09H300--04NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C15, C16, C17, C18
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C3, C9, C10, C13, C14, C22
100 pF Chip Capacitors
ATC600F101JT250XT
ATC
C4, C26
20 pF Chip Capacitors
ATC600F200JT250XT
ATC
C5, C25, C27
5.1 pF Chip Capacitors
ATC600F5R1BT250XT
ATC
C6
4.3 pF Chip Capacitor
ATC600F4R3BT250XT
ATC
C7, C8, C11, C12
8.2 pF Chip Capacitors
ATC600F8R2BT250XT
ATC
C19, C20, C24
2.2 pF Chip Capacitors
ATC600F2R2BT250XT
ATC
C21
5.6 pF Chip Capacitor
ATC600F5R6BT250XT
ATC
C23
4.7 pF Chip Capacitor
ATC600F4R7BT250XT
ATC
C28, C29
330 F, 63 V Electrolytic Capacitors
MCRH63V337M13X21-RH
Multicomp
R1, R2
2.2 , 1/4 W Chip Resistors
CRCW12062R20JNEA
Vishay
R3
50 , 8 W Termination Resistor
C8A50Z4A
Anaren
Z1
800–1000 MHz Band, 90, 3 dB Hybrid Coupler
X3C09P1-03S
Anaren
PCB
Rogers RO4350B, 0.020, r = 3.66
D70167
MTL
A2V09H300--04NR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 920–960 MHz
19
18.5
30
PARC
18
17.5
17
16
820
860
880
900
920
f, FREQUENCY (MHz)
–2.5
–31
–3
–33
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
840
–30
–32
ACPR
16.5
50
40
Gps
D
60
940
–34
–35
980
960
–3.5
–4
–4.5
PARC (dB)
19.5
70
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 48 Vdc, Pout = 79 W (Avg.), IDQA = 400 mA, VGSB = 1.2 Vdc
20.5 Single--Carrier W--CDMA
20
D, DRAIN
EFFICIENCY (%)
21
–5
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 79 Watts Avg.
0
VDD = 48 Vdc, Pout = 45 W (PEP), IDQA = 400 mA
VGSB = 1.2 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
–15
IM3--L
–30
IM3--U
IM5--L
–45
IM5--U
IM7--L
–60
–75
IM7--U
1
10
200
100
TWO--TONE SPACING (MHz)
20
0
19.5
19
18.5
18
17.5
VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.2 Vdc
f = 940 MHz, Single--Carrier W--CDMA
D
–1
ACPR
–2
–1 dB = 36 W
Gps
–3
–2 dB = 60 W
–4
–5
10
–3 dB = 83 W
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
35
60
85
Pout, OUTPUT POWER (WATTS)
PARC
110
70
–15
60
–20
50
40
30
–25
–30
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
20.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–35
20
–40
10
135
–45
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2V09H300--04NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 920–960 MHz
65
19
940 MHz
960 MHz
920 MHz
18
45
920 MHz
35
D
17
960 MHz
920 MHz 940 MHz
ACPR
16
15
960 MHz 55
940 MHz
Gps
15
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
1
25
5
400
100
10
Pout, OUTPUT POWER (WATTS) AVG.
0
–10
–20
–30
–40
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 48 Vdc, IDQA = 400 mA, VGSB = 0.2 Vdc
Single--Carrier W--CDMA, 3.84 MHz
20 Channel Bandwidth
D, DRAIN EFFICIENCY (%)
21
–50
–60
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
21
Gain
GAIN (dB)
18
15
12
VDD = 48 Vdc
Pin = 0 dBm
IDQA = 400 mA
VGSB = 1.2 Vdc
9
6
400
500
600
700
800
900
f, FREQUENCY (MHz)
1000
1100
1200
Figure 7. Broadband Frequency Response
A2V09H300--04NR3
6
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
A2V09H300--04NR3
RF Device Data
Freescale Semiconductor, Inc.
7
A2V09H300--04NR3
8
RF Device Data
Freescale Semiconductor, Inc.
A2V09H300--04NR3
RF Device Data
Freescale Semiconductor, Inc.
9
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Feb. 2016
Description
 Initial release of data sheet
A2V09H300--04NR3
10
RF Device Data
Freescale Semiconductor, Inc.
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E 2016 Freescale Semiconductor, Inc.
A2V09H300--04NR3
Document
Number:
RF
Device
Data A2V09H300--04N
Rev. 0, 2/2016Semiconductor, Inc.
Freescale
11