Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT09S282N
Rev. 0, 10/2012
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
AFT09S282NR3
This 80 watt RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 720 to 960 MHz.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
20.0
35.9
6.3
--38.0
--14
940 MHz
20.1
36.2
6.2
--37.6
--18
960 MHz
20.0
36.1
6.1
--37.5
--17
720--960 MHz, 80 W AVG., 28 V
Features
OM--780--2
PLASTIC
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
RFin/VGS 2
1 RFout/VDS
(Top View)
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature Range
TC
--40 to +150
°C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 80 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz
Case Temperature 91°C, 282 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz
RθJC
°C/W
0.31
0.27
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 370 μAdc)
VGS(th)
1.0
1.5
2.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mA, Measured in Functional Test)
VGS(Q)
1.7
2.2
2.7
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.14
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT09S282NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 80 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
19.0
20.0
22.0
dB
Drain Efficiency
ηD
33.5
36.1
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
5.6
6.1
—
dB
ACPR
—
--37.5
--36.0
dBc
IRL
—
--17
--10
dB
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz
VSWR 10:1 at 32 Vdc, 416 W CW Output Power
(3 dB Input Overdrive from 280 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
280
—
W
VBWres
—
60
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 80 W Avg.
GF
—
0.1
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.0156
—
dB/°C
∆P1dB
—
0.006
—
dB/°C
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30°C to +85°C)
1. Part internally matched both on input and output.
AFT09S282NR3
RF Device Data
Freescale Semiconductor, Inc.
3
C25
C14
C15
C3
C4
C2
C5
C1
C9
R1
R2
C6
CUT OUT AREA
C8
C10
C11
C12
C13
C16
C17
C20
C24
C26*
C21
C22
C18 C19 C23
C7
AFT09S282N
Rev. 0
*C26 is mounted vertically.
Figure 2. AFT09S282NR3 Test Circuit Component Layout
Table 6. AFT09S282NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
62 pF Chip Capacitor
ATC100B620JT500XT
ATC
C2, C5, C10, C13
4.7 pF Chip Capacitors
ATC600F4R7BT250XT
ATC
C3, C7, C14, C15, C22, C23
10 μF Chip Capacitors
GRM32ER71H106KA12L
Murata
C4, C6, C16, C17, C18, C19
47 pF Chip Capacitors
ATC600F470JT250XT
ATC
C8, C9, C11, C24
3.9 pF Chip Capacitors
ATC600F3R9BT250XT
ATC
C12, C20, C21
2.4 pF Chip Capacitors
ATC600F2R4BT250XT
ATC
C25
470 μF, 63 V Electrolytic Capacitor
MCGPR63V477M13X26-RH
Multicomp
C26
36 pF Chip Capacitor
ATC100B360JT500XT
ATC
R1, R2
6.04 Ω, 1/4 W Chip Resistor
CRCW12066R04FKEA
Vishay
PCB
0.020″, εr = 3.5
RO4350
Rogers
AFT09S282NR3
4
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, Pout = 80 W (Avg.)
30
IDQ = 1400 mA, Single--Carrier W--CDMA
26
20
19
22
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Gps
18
17
16
PARC
--38
--5
--40
14
--41
IRL
13
820
--0
--39
ACPR
15
--37
--10
--15
--20
--42
840
860
880
900
920
940
960
--25
980
--1
--1.2
--1.4
--1.6
--1.8
PARC (dB)
21
Gps, POWER GAIN (dB)
34
ηD
IRL, INPUT RETURN LOSS (dB)
38
22
ACPR (dBc)
23
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 80 Watts Avg.
--10
VDD = 28 Vdc, Pout = 320 W (PEP), IDQ = 1400 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20 Frequency of 940 MHz
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50
--60
IM7--U
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
19
18
17
16
0
VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
ACPR
--1
40
30
--3 dB = 132 W
50
70
--25
35
--4
--5
45
PARC
--2 dB = 95 W
--3
--20
Gps
--1 dB = 67 W
--2
50
ηD
90
110
130
--30
--35
ACPR (dBc)
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
21
1
ηD, DRAIN EFFICIENCY (%)
22
--40
25
--45
20
--50
150
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT09S282NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
21
20
940 MHz
920 MHz
960 MHz
0
50
--10
ηD
40
Gps
19
60
960 MHz
30
940 MHz 920 MHz
18
20
960 MHz
ACPR
17
920 MHz
940 MHz
0
300
16
1
10
10
100
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
ηD, DRAIN EFFICIENCY (%)
22
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
23
20
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1400 mA
10
GAIN (dB)
19
0
Gain
--10
17
IRL (dB)
21
--20
15
IRL
13
--30
11
700
800
900
1000
1100
1200
1300
1400
--40
1500
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT09S282NR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
Zload (1)
(Ω)
Max
Linear
Gain (dB)
(dBm)
920
1.83 - j3.18
1.66 + j3.17
4.55 - j3.27
18.7
940
2.01 - j3.27
2.03 + j3.31
4.97 - j2.86
960
2.64 - j3.34
2.55 + j3.45
5.77 - j1.78
P3dB
(W)
ηD
(%)
AM/PM
(°)
(dBm)
(W)
ηD
(%)
AM/PM
(°)
56.0
396
53.5
-8.0
56.9
494
58.2
-12
18.7
55.9
391
54.4
-7.7
56.9
490
57.6
-11
18.4
55.9
391
53.9
-7.9
56.9
488
57.8
-12
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 8. Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
(1)
P1dB
Max
Linear
Gain (dB)
(dBm)
P3dB
(W)
ηD
(%)
AM/PM
(°)
(dBm)
(W)
ηD
(%)
AM/PM
(°)
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
920
1.83 - j3.18
1.70 + j3.02
1.49 - j1.61
22.0
53.5
225
66.2
-15
54.3
267
69.6
-22
940
2.01 - j3.27
2.12 + j3.16
1.48 - j1.80
22.0
53.3
215
66.6
-16
54.0
248
70.1
-24
960
2.64 - j3.34
2.66 + j3.26
1.76 - j1.79
21.7
53.6
230
67.4
-15
54.3
269
70.6
-22
Zload
(Ω)
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
AFT09S282NR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
0
0
--0.5
--0.5
55
--1.5
54.5
E
--2
--1
55.5
IMAGINARY (Ω)
IMAGINARY (Ω)
--1
54
--2.5
P
51.5
--3.5
--4
53.5
53 52.5 52
--3
1
64
--2.5
62 60
58 56
54 52
50
P
--3
--4
--4.5
0
66
E
--2
--3.5
--4.5
3
2
4
5
6
7
0
1
2
3
4
5
6
7
REAL (Ω)
REAL (Ω)
Figure 10. P1dB Load Pull Output Power Contours (dBm)
Figure 11. P1dB Load Pull Efficiency Contours (%)
0
0
--0.5
--0.5
22
--1
--1
21.5
--1.5
21 20.5 20
E
--2
19.5
19
18.5
IMAGINARY (Ω)
IMAGINARY (Ω)
--1.5
18
--2.5
P
--3
--1.5
--4
--4
18.5
0
1
2
3
4
5
6
7
--24
--3
--3.5
--4.5
--8
--16
--2.5
--3.5
--4.5
E
--2
--18
--14 --12
P
--10
--20
--22
0
1
2
3
4
5
6
REAL (Ω)
REAL (Ω)
Figure 12. P1dB Load Pull Gain Contours (dB)
Figure 13. P1dB Load Pull AM/PM Contours (°)
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
7
Power Gain
Drain Efficiency
Linearity
Output Power
AFT09S282NR3
8
RF Device Data
Freescale Semiconductor, Inc.
1
1
0
0
IMAGINARY (Ω)
IMAGINARY (Ω)
P3dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
--1
55.5 56
E
--2
56.5
P
55
--4
0
2
1
E
--2
68
66
64
P
62
60
58
56
--3
54.5 54
53.5 53
52.5
--3
--1
54
52
--4
3
4
5
6
7
0
2
1
3
4
5
6
7
REAL (Ω)
REAL (Ω)
Figure 14. P3dB Load Pull Output Power Contours (dBm)
Figure 15. P3dB Load Pull Efficiency Contours (%)
1
1
--6
0
--8
0
--1
20
E
--2
19.5
19 18.5 18 17.5
17
IMAGINARY (Ω)
IMAGINARY (Ω)
--10
16
16.5
P
--3
--1
--12
--14
--16
E
--2
P
--22 --18
--20
--3
--4
--4
0
1
2
4
3
5
6
7
0
1
2
3
4
5
6
REAL (Ω)
REAL (Ω)
Figure 16. P3dB Load Pull Gain Contours (dB)
Figure 17. P3dB Load Pull AM/PM Contours (°)
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
7
Power Gain
Drain Efficiency
Linearity
Output Power
AFT09S282NR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT09S282NR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT09S282NR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT09S282NR3
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Oct. 2012
Description
• Initial Release of Data Sheet
AFT09S282NR3
RF Device Data
Freescale Semiconductor, Inc.
13
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AFT09S282NR3
Document Number: AFT09S282N
Rev. 0, 10/2012
14
RF Device Data
Freescale Semiconductor, Inc.